TW201438085A - Wafer processing method - Google Patents

Abstract

On the back of a wafer having a front side formed thereon a plurality of elements and a backside exposed therefrom electrodes connected with the elements, there is provided a wafer processing method capable of mounting a chip having electrodes corresponding to the exposed electrodes and dicing the wafer along the scribe lines easily. To solve the problem, a wafer processing method is provided, which comprises forming elements in a plurality of regions divided by grid-shaped scribe lines arranged on the front side, exposing electrodes connected with the elements on the wafer backside, mounting a chip provided with electrodes corresponding to the exposed electrodes, and dicing the wafer mounted with chip along the scribe lines. The wafer processing method is characterized by comprising the following processes: a process of forming scribe grooves for forming scribe grooves having a depth equivalent to the complete thickness of the elements along the scribe lines from the side surface of the wafer; a plate bonding process for bonding a plate surface through an adhesive layer to the wafer surface that has been treated by the scribe grooves forming process; a backside-grinding process for grinding the wafer backside that has been treated by the plate bonding process, so that the wafer is formed to have a complete thickness to expose the scribe grooves on the backside, thereby dicing the wafer into individual elements; a chip mounting process with which the chip having electrodes corresponding to those electrodes exposed from the backside of the wafer that has been treated by the backside-grinding process is bonded/mounted to the exposed electrodes; a wafer support process for adhering a dicing tape to the chip side of the wafer backside that has been treated by the chip mounting process, and supporting the periphery of the dicing tape through a ring frame; and a plate stripping process for peeling off the plate bonded to the surface of the wafer that has been treated by the wafer support process.

Description

Wafer processing method (4) Field of invention

The present invention relates to a wafer processing method in which a back surface of a wafer having a plurality of elements formed on a surface thereof is ground to form a predetermined thickness.

Background of the invention

In the conductor element manufacturing process, a plurality of regions are divided by a predetermined dividing line called a dividing line arranged in a lattice shape on the back surface of a substantially circular disk-shaped semiconductor wafer, and ICs and LSIs are formed in the divided regions. And other components. Further, the semiconductor wafer is cut along the dividing line to divide the region where the element is formed, thereby manufacturing each semiconductor element. The thus-divided wafer is processed to a predetermined thickness by grinding by a polishing device before being cut along the dividing line.

In addition, a multilayer semiconductor package in which a plurality of elements are laminated is proposed in order to increase the capacity and density of the semiconductor device (for example, refer to Patent Document 2).

[First technical literature]

[Patent Literature]

[Patent Document 1] JP-A-2002-76167

Summary of invention

However, when the back surface of the wafer is ground to a predetermined thickness and exposed to the electrodes of the electrode bonding element wafer on the back surface, the dividing process of dividing the wafer along the dividing line is performed, but the bonding process is performed before bonding to the wafer. The plurality of component wafer sides on the back side are supported by the ring-shaped frame through the dicing tape. When the dicing tape is adhered to the plurality of element wafer sides on the back surface of the wafer, or when the wafer supported by the dicing tape is supported by the ring frame, the wafer may be damaged. Further, since the Δ wafer having a substantially triangular shape of the end material exists in the outer periphery of the wafer, the Δ wafer is scattered when the wafer is processed along the dicing line. Therefore, in order to prevent the Δ wafer from scattering, a temporary element wafer is mounted on the lower side of the Δ wafer, which has a problem of deterioration in productivity.

The present invention has been made in view of the above circumstances, and a main object of the present invention is to provide a wafer processing method in which a back surface of a wafer having a plurality of elements on its surface and an electrode connected to the surface is exposed on the back surface, and an electrode having the electrode corresponding thereto is mounted. The wafer is easily divided along the dividing line.

In order to solve the problems of the above-mentioned main technology, according to the present invention, a method for processing a wafer is provided in which a plurality of regions are formed on a surface by dividing lines arranged in a lattice shape, and are exposed on the back surface to be connected to the device. a wafer having an electrode corresponding to the electrode is mounted on the back surface of the electrode of the electrode, and the wafer is divided along the dividing line, and the wafer is processed The method includes the following procedure: a dividing groove forming process, wherein a dividing groove having a depth corresponding to a completed thickness of the element is formed along a dividing line from a surface side of the wafer; and a flat bonding process is used to bond the surface of the flat plate to the surface through the adhesive layer a surface of the wafer on which the dividing groove forming process is performed; a back grinding process of polishing the back surface of the wafer on which the flat bonding process is performed, forming the wafer to a completed thickness, and exposing the dividing groove to the back surface, and crystallizing The wafer is divided into individual components; the wafer mounting process is to bond the wafer having the electrode corresponding to the electrode exposed on the back surface of the wafer on which the back grinding process has been performed, and the electrodes; the wafer support program is installed in the implementation The wafer side of the wafer on the back side of the wafer mounting process, the dicing tape is adhered and the outer periphery of the dicing tape is supported by the annular frame; and the flat stripping process is bonded to the surface of the wafer on which the wafer support program has been implemented The flat stripped.

The dividing groove forming process is to form a dividing groove by cutting the cutting blade along the cutting line.

Further, the dividing groove forming program forms the dividing groove by irradiating the laser beam along the cutting line.

In the wafer processing method of the present invention, since the dividing groove forming process is included, a dividing groove having a depth corresponding to the completed thickness of the element is formed along the dividing line from the surface side of the wafer; and the surface of the flat plate is transparent through the flat bonding process. The over-adhesive layer is bonded to the surface of the wafer on which the dividing groove forming process has been performed; the back grinding process is performed to polish the back surface of the wafer on which the flat bonding process has been performed, the wafer is formed to have a thickness of the finished thickness, and the division is performed The trench is exposed on the back side, and the wafer is divided into individual components; the wafer mounting process is to bond the wafer having the electrode corresponding to the electrode exposed on the back surface of the wafer on which the back grinding process has been performed, and the electrodes; a supporting program for attaching a dicing tape to a wafer side mounted on a wafer on which the dividing process is performed and supporting a peripheral portion of the dicing tape by a ring frame; and a flat stripping process to be bonded to the crystal having implemented the wafer supporting program Since the flat surface of the round surface is peeled off, since the wafer is bonded to the flat surface before being bonded to the dicing tape, the dividing groove is formed by polishing the back surface to be divided into the respective elements, so that the problem of breakage when the dicing tape is adhered can be eliminated.

Further, since the back surface polishing process for dividing the wafer into individual elements by exposing the division grooves on the back surface of the wafer is performed by bonding the surface of the wafer to the flat surface, the Δ wafer does not scatter at the time of division. Therefore, it is not necessary to install a temporary component wafer to improve productivity.

2‧‧‧Semiconductor wafer

2a‧‧‧ Surface of semiconductor wafer

2b‧‧‧Back of semiconductor wafer

3‧‧‧Cutting device

4‧‧‧ Laser processing equipment

5‧‧‧ tablet

5a‧‧‧ Surface of the plate

5b‧‧‧The back of the tablet

6‧‧‧ grinding device

7‧‧‧ wafer mounting device

8‧‧‧ ring frame

9‧‧‧Component separation device

21‧‧‧ cutting line

22‧‧‧ components

23, 251‧‧‧ electrodes

25‧‧‧ wafer

31‧‧‧Clamping device chuck

32‧‧‧ Cutting means

33‧‧‧Photographing means

41‧‧‧ chuck table

42‧‧‧Laser light exposure

43‧‧‧Photographing means

50‧‧‧Adhesive layer

61‧‧‧ chuck table

62‧‧‧ grinding means

71‧‧‧Clamping station for wafer mounting device

80‧‧‧ cutting tape

91‧‧‧ box keeping means

92‧‧‧ Tape expansion means

93‧‧‧ Picker

210‧‧‧dividing trench

321‧‧‧Spindle sleeve

322‧‧‧Rotating spindle

323‧‧‧Cutting inserts

422‧‧‧ concentrator

621‧‧‧Spindle sleeve

622‧‧‧Rotating spindle

623‧‧‧Installation

624‧‧‧ grinding wheel

625‧‧‧Abutment

626‧‧‧ grinding diamonds

627‧‧‧ fastening bolts

911‧‧‧ frame holding member

911a‧‧‧Loading surface

912‧‧‧ clamp

921‧‧‧Expanding drum

922‧‧‧Support flange

923‧‧‧ means

923a‧‧ ‧ cylinder

923b‧‧‧ piston rod

61a, 624a, 624b, 634b, 322a,

X, Y‧‧‧ arrows

P‧‧‧Light spot

S‧‧‧ gap

1(a) and 1(b) are perspective views of a semiconductor wafer as a wafer divided by the wafer processing method of the present invention.

2(a) and 2(b) are explanatory views showing a dividing groove forming program in the method of processing a wafer of the present invention.

3(a) and 3(b) are explanatory views showing other embodiments of the dividing groove forming program in the method of processing a wafer of the present invention.

4(a) and 4(b) are diagrams showing the bonding of the wafer in the wafer processing method of the present invention. An illustration of the program.

5(a) to 5(c) are explanatory views showing a back grinding process in the wafer processing method of the present invention.

6(a) and 6(b) are explanatory views showing a wafer mounting procedure in the wafer processing method of the present invention.

Fig. 7 is an explanatory view showing a wafer supporting program in the wafer processing method of the present invention.

8(a) and 8(b) are explanatory views showing a flat stripping procedure in the wafer processing method of the present invention.

Figure 9 is a perspective view of a component separating device for carrying out the component separation process in the wafer processing method of the present invention.

10(a) to (c) are explanatory views of a component separation process in the wafer processing method of the present invention.

Detailed description of the preferred embodiment

Hereinafter, preferred embodiments of the method for processing a wafer in the present invention will be described in detail with reference to additional drawings.

1(a) and (b) are perspective views showing a semiconductor wafer processed as a wafer in accordance with the present invention. The semiconductor wafer 2 shown in FIGS. 1(a) and 1(b) is formed of a tantalum wafer having a thickness of, for example, 600 μm, and a plurality of cut lines 21 are formed in a lattice shape on the surface 2a, and by the plurality of strips A plurality of regions, which are divided by the dicing lines 21, form elements 22 such as ICs and LSIs. Further, the electrode 23 connected to each element 22 is exposed on the back surface 2b of the wafer 2. However, there is also a wafer in which the electrode 23 is not exposed on the back surface 2b. Hereinafter, the semiconductor wafer 2 is A wafer processing method in which a wafer to be described later is mounted on the back surface 2b and divided into individual elements along the dicing line 21 will be described.

First, a dividing groove forming program is implemented, and the dividing groove forming program A dividing groove having a depth corresponding to the thickness of the element 22 is formed along the cutting line 21 from the surface side of the semiconductor wafer 2. The dividing groove forming program is carried out using the cutting device 3 shown in Fig. 2(a) in the illustrated embodiment. The cutting device 3 shown in Fig. 2(a) has a chuck table 31 for holding a workpiece, a cutting means 32 for cutting and holding a workpiece on the chuck table 31, and a photographing and holding unit 32 for holding and holding the workpiece. The photographing means 33 of the workpiece of the stage 31. The chuck table 31 is configured to be capable of sucking and holding a workpiece, and is moved in a cutting feed direction indicated by an arrow X in FIG. 2(a) by a cutting feed mechanism (not shown), and is not shown. The indexing feed mechanism moves in the indexing feed direction indicated by the arrow Y.

The aforementioned cutting means 32 includes a spindle sleeve having a substantially horizontal arrangement a rotating spindle 322 rotatably supported by the spindle sleeve 321 and a cutting insert 323 attached to a front end of the rotating spindle 322. The rotating spindle 322 is formed by being disposed in the spindle sleeve 321 The servo motor is shown rotating in the direction indicated by arrow 322a. The photographing means 33 is attached to the front end of the spindle sleeve 321 and includes an illumination means for illuminating the workpiece, an optical system for capturing an area illuminated by the illumination means, and an image captured by the optical system. Take a part (CCD), etc., and send the captured image signal to a control unit not shown.

The dividing groove forming process is carried out using the cutting device 3 described above, such as FIG. 2(a) shows the back of the semiconductor wafer 2 placed on the chuck table 31. On the side of the surface 2b, the semiconductor wafer 2 is held on the chuck stage 31 by a suction means (not shown). Therefore, the surface 2a of the semiconductor wafer 2 held by the chuck stage 31 becomes the upper side. In this manner, the chuck table 31 that sucks and holds the semiconductor wafer 2 is positioned directly under the photographing means 33 by a cutting feed mechanism (not shown).

When the chuck table 31 is positioned directly below the photographing means 33, then A calibration procedure for detecting a cutting region of the semiconductor wafer 2 along which the dividing groove is to be formed along the cutting line 21 is performed by the imaging means 33 and a control means (not shown). In other words, the imaging means 33 and the control means (not shown) perform an image corresponding to the cutting line 21 formed in the predetermined direction of the semiconductor wafer 2, and an image for matching the pattern with the cutting blade 323. Processing, and calibration of the cutting area of the cutting insert 623 (calibration procedure) is performed. Further, the cutting position of the cutting region is also calibrated in the same manner with respect to the cutting line 21 extending in the direction orthogonal to the predetermined direction formed in the semiconductor wafer 2.

If it has been detected as described above and held on the chuck table 31 The alignment of the dicing region of the semiconductor wafer 2 moves the chuck table 31 holding the semiconductor wafer 2 toward the cutting start position of the cutting region. Further, the cutting insert 323 is cut and fed downward by rotating in the direction indicated by an arrow 322a in Fig. 2(a). The cutting-in feeding position is set such that the outer periphery of the cutting insert 323 is from the surface of the semiconductor wafer 2 to a depth position (for example, 50 μm) corresponding to the finished thickness of the element. Thus, if the cutting and feeding of the cutting insert 323 has been carried out, the chuck table 31 is cut and fed in the direction indicated by the arrow X in Fig. 2(a) while rotating the cutting insert 323, as shown in Fig. 2 (Fig. 2 b) The division groove 210 is formed along the cutting line 21 (the division groove forming program).

Next, another embodiment of the dividing groove forming program will be described. Bright. Another embodiment of the dividing groove forming program is implemented using the laser processing apparatus 4 shown in Fig. 3(a). The laser processing apparatus 4 shown in Fig. 3(a) includes a chuck table 41 for holding a workpiece, and a laser beam irradiation means 42 for irradiating a laser beam to the workpiece held on the chuck table 41, And a photographing means 43 for photographing the workpiece held on the chuck table 41. The chuck table 41 is configured to be capable of sucking and holding the workpiece, and is moved in the processing feed direction indicated by an arrow X in FIG. 3(a) by a processing feed means (not shown), and is not shown. The index feeding means moves in the index feeding direction indicated by an arrow Y in Fig. 3 (a).

The aforementioned laser beam illumination means 42 comprises a substantially horizontal arrangement A cylindrical housing 421. A laser beam oscillating means including a pulsed laser ray oscillator (not shown) or a reverse frequency setting means is disposed in the casing 421. The front end of the casing 421 is provided with a concentrator 422 for collecting the pulsed laser light oscillated by the pulsed laser ray oscillating means. Further, the laser beam irradiation means 42 has a light collecting point position adjusting means (not shown) for adjusting the position of the light collecting point of the pulsed laser light collected by the light collector 422.

Mounted in a housing 421 constituting the aforementioned laser beam irradiation means 42 The imaging means 43 at the front end has an illumination means for illuminating the workpiece, an optical system for capturing an area illuminated by the illumination means, and an imaging part (CCD) for capturing an image captured by the optical system, and the like. The image signal is sent to a control device not shown.

When the division processing is performed by using the laser processing apparatus 4 described above, the bonding surface of the semiconductor wafer 2 is placed on the chuck stage 41 as shown in FIG. 3(a). On the 2b side, the semiconductor wafer 2 is held on the chuck stage 41 by an attraction means (not shown). Therefore, the surface 2a of the semiconductor wafer 2 held by the chuck stage 41 becomes the upper side. In this manner, the chuck stage 41 that sucks and holds the semiconductor wafer 2 is positioned directly below the imaging means 43 by a cutting feed mechanism (not shown).

When the chuck table 41 is positioned directly below the photographing means 43, A calibration operation of the processing area of the semiconductor wafer 2 to be subjected to laser processing is detected by the imaging means 43 and a control means (not shown). That is, the photographing means 43 and the control means (not shown) perform image processing such as pattern matching and perform calibration (calibration procedure) of the laser beam irradiation position for forming the semiconductor wafer 2 The cutting line 21 in the predetermined direction is aligned with the concentrator 422 of the laser beam irradiation means 42 that irradiates the laser beam along the cutting line 21. Further, the calibration of the laser beam irradiation position is performed similarly to the cutting line 21 formed in the direction in which the semiconductor wafer 2 is orthogonal to the predetermined direction.

If the aforementioned calibration procedure is implemented, the semiconductor wafer 2 will be maintained. The chuck table 41 is moved to the cutting start position of the cutting area. Further, the illuminator 422 of the laser beam irradiation means 42 that is irradiated with the laser beam is positioned in the laser beam irradiation area, and the predetermined cutting line 21 is positioned directly below the concentrator 422. Next, the semiconductor wafer 2 is irradiated with pulsed laser light having an absorptive wavelength by the concentrator 422 of the laser beam irradiation means 42, and the chuck table 41 is indicated by an arrow X in FIG. 3(a). The machining is carried out in the direction, whereby the dividing groove 210 (dividing groove forming program) is formed along the dividing line 21 as shown in Fig. 3(b). However, the concentrator 422 of the laser light illuminating means 42 The output of the irradiated pulsed laser light is set such that an output of the dividing groove 210 having a depth corresponding to the completed thickness of the element (for example, 50 μm) can be formed from the surface of the semiconductor wafer 2.

If the aforementioned dividing groove forming procedure has been implemented, in order to protect the formation The element 22 on the surface 2a of the semiconductor wafer 2 is subjected to a flat bonding process of bonding the surface of the flat surface 2a of the semiconductor wafer 2 through the adhesive layer. That is, as shown in FIGS. 4(a) and 4(b), the surface 5a of the flat plate 5 is bonded to the surface 2a of the semiconductor wafer 2 through the adhesive layer 50 (plate bonding process). Therefore, the flat plate 5 bonded to the front surface 2a of the semiconductor wafer 2 through the adhesive layer 50 is in a state in which the back surface 5b is exposed. On the other hand, in the embodiment shown in the figure, the flat plate 5 is formed of a glass plate having a thickness of, for example, 1 mm, and the adhesive 50 is an adhesive which is lowered in adhesion by irradiation with ultraviolet rays.

If the aforementioned flat bonding process is implemented, the back grinding machine is implemented. In the back grinding process, the back surface 2b of the semiconductor wafer 2 is polished to form the semiconductor wafer 2 to a thickness and expose the division trench 210, and the semiconductor wafer 2 is divided into individual elements. This back grinding process is carried out using the polishing apparatus 6 shown in Fig. 5 (a). The polishing apparatus 6 shown in Fig. 5 (a) has a polishing means 62 for holding a workpiece chuck stage 61 and a workpiece to be polished and held by the chuck table 61. The chuck table 61 is configured to be capable of sucking and holding a workpiece on the upper surface of the holding surface, and is rotated in a direction indicated by an arrow 61a in Fig. 5(a) by a rotation driving mechanism (not shown). The polishing means 62 includes a main shaft sleeve 621, a rotating main shaft 622 rotatably supported by the main shaft sleeve 621 and rotated by a rotation driving mechanism (not shown), a mounting member 623 attached to the lower end of the rotating main shaft 622, and mounting A grinding wheel 624 below the mounting member 623. The research The grinding wheel 624 is formed by a base 625 and a grinding stone 626 which is annularly mounted on the lower surface of the base 625. The base 625 is attached to the lower surface of the mounting member 623 by a fastening bolt 627.

Performing the aforementioned back grinding process using the aforementioned polishing apparatus 6, As shown in FIG. 5(a), the flat surface 5 side of the semiconductor wafer 2 on which the above-described flat bonding process is performed is placed on the upper surface (holding surface) of the chuck table 61. Then, the semiconductor wafer 2 is adsorbed and held by the chuck 5 through the flat plate 5 by a suction means (not shown) (wafer holding program). Therefore, the semiconductor wafer 2 held on the chuck stage 61 has its back surface 2b on the upper side. When the semiconductor wafer 2 is sucked and held by the flat plate 5 by the flat plate 5 as described above, the chucking table 61 is rotated at a direction of, for example, 300 rpm in the direction indicated by an arrow 61a in FIG. 5(a). The grinding wheel 624 of 62 is rotated at a direction of, for example, 6000 rpm in the direction indicated by an arrow 624a in FIG. 5(a) to cause the grinding vermiculite 626 to be in contact with the back surface 2b of the semiconductor wafer 2 to be processed, and as shown in FIG. 5(b). The polishing is shown until the dividing groove 210 is exposed to the back surface 2b. By thus polishing until the division trench 210 is exposed, the semiconductor wafer 2 is divided into the respective elements 22 as shown in FIG. 5(c). The plurality of divided elements 22 are bonded to the plane 5 by their surfaces, so that the semiconductor wafer 2 can be maintained without being dispersed. As described above, the back surface 2b of the semiconductor wafer 2 on which the back surface 2b is polished to have a completed thickness (for example, 50 μm) is formed, and the electrode 23 is not exposed on the wafer of the back surface 2b before the back surface polishing process is performed, and the electrode 23 is exposed.

The back surface polishing process in which the semiconductor wafer 2 is divided into the respective elements 22 is performed by polishing the back surface of the semiconductor wafer 2 as described above, and the surface 2a of the semiconductor wafer 2 is bonded to the flat plate 5. , Therefore, the Δ wafer does not scatter during the division, so that it is not necessary to mount a temporary component wafer, and productivity can be improved.

Next, a wafer mounting process of bonding the electrodes to mount the wafer is performed In this order, the wafer has electrodes corresponding to the electrodes 23 exposed on the back surface 2b of the semiconductor wafer 2 on which the back grinding process has been performed. That is, as shown in FIG. 6(a), the side of the flat plate 5 bonded to the surface of the semiconductor wafer 2 on which the back grinding process has been performed is placed on the chuck stage 71 of the wafer mounting device 7, and is actuated by The attraction means (not shown) sucks and holds the semiconductor wafer 2 through the flat plate 5. Therefore, the semiconductor wafer 2 held by the flat plate 5 on the chuck stage 71 has the back surface 2b as the upper side. The electrodes 25 are bonded to each other, and the wafer 25 has an electrode 251 corresponding to the electrode 23 exposed on the back surface 2b of the semiconductor wafer 2 held by the chuck table 71 through the flat plate 5. Further, as shown in FIG. 6(b), the wafer 25 is mounted corresponding to all the elements 22 formed on the semiconductor wafer 2.

If the aforementioned wafer mounting procedure is implemented, it is implemented in The wafer 25 on the back surface 2b of the semiconductor wafer 2 is adhered to the dicing tape, and the wafer support program outside the dicing tape is supported by the ring frame. For example, as shown in FIG. 7, the surface of the dicing tape 80 attached to the outer peripheral portion is adhered to the side of the wafer 25 on the back surface 2b of the semiconductor wafer 2 so as to cover the inner opening portion of the annular frame 8. Therefore, the semiconductor wafer 2 adhered to the surface of the dicing tape 80 is bonded to the flat surface 5 of the surface 2a. The dicing tape 80 is applied with an adhesive on the surface of, for example, a polyethylene film having a thickness of 100 μm. In the embodiment shown in FIG. 7, an example in which the wafer 25 attached to the back surface 2b of the semiconductor wafer 2 is adhered to the surface of the dicing tape 80 attached to the outer peripheral portion of the annular frame 8 is provided in the semiconductor. The wafer 25 on the back side 2b of the wafer 2 is adhered to the cutting glue When the belt 80 is used, the outer peripheral portion of the dicing tape 80 may be attached to the annular frame 8 at the same time. In this manner, since the wafer supporting program is implemented by polishing the back surface of the semiconductor wafer 2 by exposing the dividing trench 210 to divide the semiconductor wafer 2 into the respective elements 22, the semiconductor wafer can be released. 2 The problem of damage when sticking to the cutting tape.

Next, a flat stripping procedure is performed, and the flat stripping procedure is A process of bonding the flat plate 5 bonded to the surface 2a of the semiconductor wafer 2 on which the wafer support process is performed. In the flat stripping process, as shown in FIG. 8(a), ultraviolet rays are irradiated from the back surface 5b side of the flat plate 5 bonded to the surface 2a of the semiconductor wafer 2 supported by the annular frame 8 through the dicing tape 80. As a result, since the adhesive layer 50 that bonds the surface 2a of the semiconductor wafer 2 to the surface 5a of the flat plate 5 is an adhesive that is lowered by the ultraviolet ray adhesive force, the adhesive force is lowered. Therefore, the flat plate 5 bonded to the front surface 2a of the semiconductor wafer 2 can be easily peeled off as shown in Fig. 8(b). At this time, the outer peripheral portion of the semiconductor wafer 2 on which the element 22 is not formed is removed in a state of being bonded to the flat plate 5. Therefore, the dicing tape 80 attached to the ring frame 8 is in a state in which the wafer 25 bonded to the back surface of the wafer 22 is adhered.

As mentioned above, when the wafer support program and the flat stripping process were implemented In the sequence, a component separation process is performed in which the dicing tape 80 adhered to the semiconductor wafer 2 is expanded to separate the semiconductor wafer 2 along the dicing line 21 into the respective elements 22 on which the wafer 25 is mounted. This component separation procedure is carried out using the component separation device 9 as shown in FIG. The component separating device 9 shown in Fig. 9 has a frame holding means 91 for holding the above-mentioned annular frame 8, and a glue for expanding the dicing tape 80 attached to the annular frame 8 held by the frame holding means 91. The belt expanding means 92 and the picking chuck 93 are provided. The frame holding means 91 is formed by a plurality of clamps 912 as fixing means disposed on the outer circumference of the frame holding member 911. The mounting surface 911a on which the annular frame 8 is placed is formed on the upper surface of the frame holding member 911, and the annular frame 8 is placed on the mounting surface 911a. Further, the annular frame 8 placed on the mounting surface 911a is fixed to the frame holding member 911 by a clamp 912. The frame holding means 91 thus constructed can be supported by the tape expanding means 92 so as to be able to advance and retreat in the up and down direction.

The tape expansion means 92 has a ring frame holding structure The expansion drum 921 on the inner side of the piece 911. The expansion drum 921 has an inner diameter and an outer diameter which are smaller than the inner diameter of the annular frame 8 and which are larger than the outer diameter of the semiconductor wafer 2 attached to the dicing tape 80 of the annular frame 8. Further, the expansion drum 921 has a support flange 922 at the lower end. In the embodiment shown in the drawing, the tape expanding means 92 has a supporting means 923 for supporting the annular frame holding member 911 so as to be able to advance and retreat in the vertical direction. The support means 923 is formed by a plurality of cylinders 923a disposed on the support flange 922, and the piston rod 923b is coupled to the lower surface of the annular frame holding member 911. As shown in FIG. 10(a), the support means 923 formed of the plurality of cylinders 923a moves the annular frame holding member 911 in the vertical direction to a height at which the mounting surface 911a and the upper end of the expanding drum 921 are substantially the same height. The position is as shown in Fig. 10(b) between the upper end of the expansion drum 921 and the expansion position below the predetermined amount.

It is implemented using the element separating device 9 constructed as above. The component separation procedure will be described with reference to FIG. In other words, the annular frame 8 to which the dicing tape 80 to which the semiconductor wafer 2 is attached is placed on the mounting surface 911a of the frame holding member 911 constituting the frame holding means 91 as shown in Fig. 10(a). And borrow It is fixed to the frame holding member 911 by the clamp 912 (frame holding program). At this time, the frame holding member 911 is positioned at the reference position shown in FIG. 10(a). Next, a plurality of cylinders 923a as the supporting means 923 constituting the tape expanding means 92 are actuated, and the annular frame holding member 911 is lowered to the expanded position shown in FIG. 10(b). Therefore, since the annular frame 8 fixed to the mounting surface 911a of the frame holding member 911 is also lowered, as shown in FIG. 10(b), the dicing tape 80 attached to the annular frame 8 is cut to the expansion drum. The upper edge of 921 is expanded and expanded (tape expansion procedure). As a result, since the tensile force is applied to the semiconductor wafer 2 adhered to the dicing tape 80 radially, the respective elements 22 to which the wafer 25 is mounted are separated and a space S is formed between the elements.

Next, as shown in FIG. 10(c), the actuating picker 93 is affixed and mounted. The component 22 of the wafer 25 is peeled off from the dicing tape 80 and picked up, and transferred to a tray or wafer bonding program (not shown). On the other hand, in the picking up procedure, since the gap S between the respective elements 22 to which the wafer 25 adhered to the dicing tape 80 is attached is widened as described above, it can be easily picked up without coming into contact with the adjacent elements 22.

2‧‧‧Semiconductor wafer

5‧‧‧ tablet

7‧‧‧ wafer mounting device

23, 251‧‧‧ electrodes

25‧‧‧ wafer

71‧‧‧Clamping station for wafer mounting device

Claims (3)

A method for processing a wafer, wherein a surface of a wafer is formed by a plurality of regions arranged in a lattice-shaped dividing line, and a back surface of a wafer on which an electrode connected to the device is exposed on a back surface is mounted on the back surface of the wafer. a wafer of electrodes, and dividing the wafer along a dividing line, the method of processing the wafer includes the following procedure: dividing the groove forming process, forming a depth from the surface side of the wafer along the dividing line to be equivalent to the completion of the component a dividing groove of a thickness; a flat bonding process of bonding the surface of the flat plate to the surface of the wafer on which the dividing groove forming process has been performed through an adhesive layer; and a back grinding process for grinding the back surface of the wafer on which the flat bonding process is performed, The wafer is formed to have a completed thickness, and the dividing trench is exposed on the back surface to divide the wafer into individual components; the wafer mounting process has a corresponding to the electrode exposed on the back side of the wafer on which the back grinding process has been performed. a wafer of electrodes is mounted in engagement with the electrodes; a wafer support program is mounted on the back side of the wafer on which the wafer mounting process is implemented Sheet side, and adhesive dicing tape supported by an annular frame portion outside the periphery of the dicing tape; release and tablet procedures, the embodiment has been joined to the flat surface of the wafer the release of the wafer support Procedure. The method of processing a wafer according to claim 1, wherein the dividing groove forming process is to form a dividing groove by cutting the cutting blade along the cutting line. The method of processing a wafer according to claim 1, wherein the dividing groove forming process irradiates the laser beam along the cutting line to form a dividing groove.