CN105679910A - Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof - Google Patents
Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof Download PDFInfo
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- CN105679910A CN105679910A CN201610031553.2A CN201610031553A CN105679910A CN 105679910 A CN105679910 A CN 105679910A CN 201610031553 A CN201610031553 A CN 201610031553A CN 105679910 A CN105679910 A CN 105679910A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention relates to the technical field of a semiconductor device, in particular to an inverted deep ultraviolet light emitting diode chip with high luminous efficiency and a preparation method of the chip. In the inverted deep ultraviolet light emitting diode chip with high luminous efficiency, provided by the invention, a Ni/Al material with high ultraviolet reflectivity is selected and used as a p-type electrode material, the ohmic contact performance between a metal electrode and p-type GaN can be partially improved, and ultraviolet light also can be reflected to a sapphire surface. According to the preparation method of the inverted deep ultraviolet light emitting diode chip with high luminous efficiency, provided by the invention, a sapphire substrate of an epitaxial wafer is thinned to a specific thickness, an Al thin film with an appropriate thickness is evaporated, and the surface luminous efficiency of the inverted deep ultraviolet light emitting chip is partially improved by coupling of TM-mode ultraviolet light and surface plasmon.
Description
Technical field
The present invention relates to technical field of semiconductor device, it is specifically related to the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency and the preparation method of chip.
Background technology
AlGaN is a kind of direct band-gap semicondictor material, has stable physicochemical property, by regulating the al composition in material, it is possible to make AlxGa1-xThe energy gap of N (0≤x≤1) changes between 3.4eV (GaN)-6.2eV (AlN), based on AlyGa1-yN/AlzGa1-zThe band-to-band transition of N quantum-well materials can realize 200～365 nanometers of adjustable complete solid-state UV LED light source. New A lGaN base ultraviolet light-emitting diode has many advantages relative to traditional mercury lamp: 1. ultraviolet light-emitting diode structure is simple, and not containing frangible glass shell, portable shock-resistant, operating voltage is only a few volt, and the driving circuit without the need to complexity; 2. ultraviolet light-emitting diode opens rapid (10-9S), it is not necessary to preheating; 3. ultraviolet light-emitting diode glow peak is single, and emission wavelength continuously adjustabe; 4. not containing environmentally harmful material in ultraviolet light-emitting diode material, environmental friendliness; 5. the life-span of ultraviolet light-emitting diode can reach more than 5000 hours, considerably beyond the life-span of mercury lamp. Its application has penetrated into secure communication, the military fields such as biochemistry detection and Water warfare, disinfection, ultraviolet phototherapy, ultra-violet curing, the national economy fields such as anti-counterfeiting detection.
But, the efficiency of the deep-UV light-emitting diode of less than 315 nanometers is also lower, external quantum efficiency only less than 15%, trace it to its cause mainly contain following some: first, high aluminium component AlGaN material growth comparatively difficulty, has higher dislocation desity (> 10 in the AlGaN material of preparation usually10cm-2), these dislocations may extend to quantum well active area, thus forms non-radiative recombination center, and the internal quantum efficiency of final LED device reduces. 2nd, the doping difficulty of high Al contents AlGaN material. N type impurity mainly Si in AlGaN, p-type impurity mainly Mg, Si intensity of activation in the material is 17meV (GaN) to 180meV (AlN), Mg intensity of activation in the material is 170meV (GaN) to 510meV (AlN), far above the heat energy (26meV) of room temperature.Along with the raising of Al component, in AlGaN material, n type and p-type impurity intensity of activation sharply rise, and carrier concentration sharply declines, therefore, it is very difficult to the at room temperature high aluminium component AlGaN film that carrier concentration is very high, conductivity is excellent of fire. Three, AlyGa1-yN/AlzGa1-zQuantum limit stark effect strong in N quantum well structure. Owing to not possessing reversion symmetry, the AlGaN material of wurtzite structure has very strong piezoelectricity and spontaneous polarization in [0001] direction of growth, the polarized electric field up to MV/cm magnitude can be formed in quantum well region, make electronics and hole obtain wave function spatially to produce to be separated, greatly reduce radiative recombination speed, reduce the internal quantum efficiency of LED device. Four, c face AlGaN base deep-UV light-emitting diode surface bright dipping difficulty. For the common AlGaN material along the growth of c axle [0001] direction, along with the rising of Al component in material, the brilliant field break-up energy of material internal, by the negative value that being just worth in original GaN to be gradually varied in AlN bigger, thus brings the change of top of valence band energy band structure. In GaN, top of valence band is heavy hole energy level, and top of valence band is brilliant field division energy level in AlN, therefore in GaN, the luminous outgoing direction of electronics-hole-recombination is parallel to c axle (TE pattern), and in AlN, the luminous outgoing direction of electronics-hole-recombination is perpendicular to c axle (TM pattern). Along with the rising of Al component, the luminous polarization characteristic of AlGaN material more and more trends towards AlN. In Air Interface, overwhelming majority light is reflected back toward device inside, is finally depleted through being repeatedly totally reflected.
For the above-mentioned problem selecting to cause due to the brilliant field break-up energy band change in location of deep-UV light-emitting diode and electrode materials, not having corresponding system scheme to strengthen surface bright dipping at present in the world yet, the general p-type electrode materials adopted also is commonly Ti/Al/Ti/Au etc.
Summary of the invention
The present invention provides the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency, this chip selection adopts has the reflexive Ni/Al material of high UV-light as p-type electrode materials, not only can partly improve the ohm contact performance of metal electrode and p-type GaN, UV-light also can be reflexed to sapphire face, simultaneously epitaxial wafer reducing thin of sapphire substrate to specific thicknesses, and steam the Al film of plating suitable thickness, by being coupled of TM pattern UV-light and surface phasmon, improve the surperficial light extraction efficiency of upside-down mounting deep-UV light-emitting diode chip further. It is a further object of the present invention to provide the preparation method of this chip.
In order to achieve the above object, the technical solution used in the present invention is: the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency, and it is the 0.3-0.5 times of c surface sapphire substrate to the chip length of side, low temperature AI N nucleating layer, PALEAlN buffer layer (PALEAlN is pulse ald aluminium nitride), high-temperature AlN intrinsic layer, n type Al that this chip structure order from bottom to top is followed successively by thicknessxGa1-xN layer, AlyGa1-yN/AlzGa1-zN multiple quantum well layer, p-type AluGa1-uN electron blocking layer, p-type GaN layer, Ni/Al UV-light high-reflectivity electrode layer, the c surface sapphire substrate back side is provided with Al film.
The Al film thickness of described substrate back is 1-10 nanometer.
Described Ni/Al electrode materials, Ni material thickness is 1-5 nanometer, and Al material thickness is 100-300 nanometer.
Described p-type GaN thickness is 1-20 nanometer.
The preparation method of the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency, it is characterized in that, comprise the steps: that (1) is in c surface sapphire substrate, utilizes MOCVD technique, described underlayer temperature is reduced to 600 DEG C, growing low temperature AlN nucleating layer;(2) on described low temperature AI N nucleating layer, growth temperature is elevated to 1050 DEG C, growth PALEAlN buffer layer; (3) on described PALEAlN buffer layer, growth temperature is elevated to 1300 DEG C, growth high-temperature AlN intrinsic layer; (4) on described high-temperature AlN intrinsic layer, growth temperature is remained on 1150 DEG C, growing n-type AlxGa1-xN layer; (5) at described n type AlxGa1-xOn N layer, growth temperature is remained on 1150 DEG C, growth AlyGa1-yN/AlzGa1-zN multiple quantum well layer; (6) growth temperature is remained on 1150 DEG C, at described AlyGa1-yN/AlzGa1-zOn N multiple quantum well layer, growth p-type AluGa1-uN electron blocking layer; (7) growth temperature is remained on 1050 DEG C, at described p-type AluGa1-uN electron grows p-type GaN layer on blocking layer, forms deep-UV light-emitting diode epitaxial wafer; (8) in described p-type GaN layer, make the figure of p-type electrode by lithography, then utilize electron beam evaporation equipment to deposit Ni/Al metal level in p-type electrode pattern district, and short annealing forms UV-light high-reflectivity p-type electrode; (9), on epitaxial wafer after the described UV-light high-reflectivity p-type electrode that completes, ICP/RIE equipment is utilized to be etched to n type AlxGa1-xN layer, and at n type AlxGa1-xN layer table top makes by lithography the figure of n-type electrode; (10) depositing metal layers on the described epitaxial wafer being carved with n-type electrode figure, and form n-type electrode in short annealing; (11) after utilizing photoresist material protection p-type and n-type electrode, it may also be useful to PECVD device steams plating SiO2Passivation layer; (12) plating SiO is steamed described completing2On passivation layer epitaxial wafer, sapphire is thinned to specific thicknesses, scribing, forms upside-down mounting deep-UV light-emitting diode chip; (13) in described upside-down mounting deep-UV light-emitting diode chip sapphire face, utilize electron beam evaporation equipment evaporating Al film, form the deep-UV light-emitting diode of high light-emitting efficiency.
Compared with prior art, the useful effect of the technical solution used in the present invention is as follows:
Chip selection provided by the invention adopts has the reflexive Ni/Al material of high UV-light as p-type electrode materials, not only can partly improve the ohm contact performance of metal electrode and p-type GaN, UV-light also can reflex to sapphire face. The preparation method of high light-emitting efficiency upside-down mounting deep ultraviolet diode chip for backlight unit provided by the invention, epitaxial wafer reducing thin of sapphire substrate to specific thicknesses, and steam the Al film of plating suitable thickness, by being coupled of TM pattern UV-light and surface phasmon, part improves the surperficial light extraction efficiency of upside-down mounting deep-UV light-emitting diode chip.
Accompanying drawing explanation
The structural representation of the deep-UV light-emitting diode chip of the high light-emitting efficiency that Fig. 1 provides for the embodiment of the present invention;
The deep-UV light-emitting diode chip vertical view of the high light-emitting efficiency that Fig. 2 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
Embodiment 1:
As shown in Figure 1, the present embodiment provides the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency, comprising: the c surface sapphire substrate 101 being thinned to specific thicknesses. It is arranged on the Al film 112 of described substrate back, it is arranged on the low temperature AI N nucleating layer 102 of described substrate face, the PALEAlN buffer layer 103 being arranged on described low temperature AI N nucleating layer, the high-temperature AlN intrinsic layer 104 being arranged on described PALEAlN buffer layer, the n type Al being arranged on described high-temperature AlN intrinsic layerxGa1-xN layer 105, is arranged on described n type AlxGa1-xAl on N layeryGa1-yN/AlzGa1-zN multiple quantum well layer 106, it is arranged on described AlyGa1-yN/AlzGa1-zP-type Al on N multiple quantum well layeruGa1-uN electron blocking layer 107, it is arranged on described p-type AluGa1-uP-type GaN layer 108 on N electron blocking layer, the Ni/Al UV-light high-reflectivity electrode layer 109 being arranged in described p-type GaN layer, be arranged on described n type AlxGa1-xN-type electrode layer 110 on N layer, the SiO being arranged on other exposed materials2Passivation layer 111.
In the present embodiment, it is that 0.3-0.5 is doubly to the chip length of side that substrate 101 is thinned to thickness, it may be preferred that thickness is the chip length of side of 0.3 times; The thickness of the Al film 112 subtracting thin substrate back is 1-10 nanometer, it may be preferred that thickness is 5 nanometers; P-type Ni/Al UV-light high-reflectivity electrode layer 109, Ni material thickness is 1-5 nanometer, and Al material thickness is 100-300 nanometer, it may be preferred that the thickness of Ni is 1 nanometer, and the thickness of Al is 150 nanometers; P-type GaN layer 108 thickness is 1-20 nanometer, it may be preferred that thickness is 10 nanometers.
Embodiment 2:
The present embodiment provides the preparation method of the upside-down mounting deep-UV light-emitting diode chip of a kind of high light-emitting efficiency, specifically comprises the steps:
(1) on the substrate of c surface sapphire, utilizing MOCVD technique, underlayer temperature is reduced to 600 DEG C, growth thickness is the low temperature AI N nucleating layer of 20 nanometers;
(2) on described low temperature AI N nucleating layer, growth temperature being elevated to 1050 DEG C, growth thickness is 200 nano PAL EAlN buffer layers;
(3) on PALEAlN buffer layer, growth temperature being elevated to 1300 DEG C, growth thickness is the high-temperature AlN intrinsic layer of 1000 nanometers;
(4) on high-temperature AlN intrinsic layer, growth temperature remaining on 1150 DEG C, growth thickness is the n type Al of 2500 nanometersxGa1-xN layer, n type AlxGa1-xN layer is that Si doping content is 1020cm-3Al0.55Ga0.45N layer;
(5) at n type AlxGa1-xN goes up layer by layer, and growth temperature remains on 1150 DEG C, growth AlyGa1-yN/AlzGa1-zN multiple quantum well layer, AlyGa1-yN/AlzGa1-zN multiple quantum well layer is specially Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum well layer, Al0.5Ga0.5N barrier layer thickness is 10 nanometers, Al0.35Ga0.65N potential well layer thickness is 2 nanometers, and the cycle of quantum well is 6;
(6) growth temperature is remained on 1150 DEG C, at AlyGa1-yN/AlzGa1-zOn N multiple quantum well layer, growth thickness is the p-type Al of 30 nanometersuGa1-uN electron blocking layer, p-type AluGa1-uN electron blocking layer is p-type Al0.6Ga0.4N electron blocking layer;
(7) growth temperature is remained on 1050 DEG C, at p-type AluGa1-uOn N electron blocking layer, growth thickness is the p-type GaN layer of 10 nanometers, forms deep-UV light-emitting diode epitaxial wafer;
(8) in described p-type GaN layer, make the figure of p-type electrode by lithography, then electron beam evaporation equipment is utilized to deposit 1 Ni nanoparticle in p-type electrode pattern district, 150 nanometers of Al metal levels, are then placed in quick anneal oven short annealing and form UV-light high-reflectivity p-type electrode;
(9), on epitaxial wafer after the described UV-light high-reflectivity p-type electrode that completes, ICP/RIE equipment is utilized to be etched to n type Al from topxGa1-xN layer, etching gos deep into n type AlxGa1-xThe degree of depth of N layer is 300 nanometers, and at n type AlxGa1-xN layer table top makes by lithography the figure of n-type electrode;
(10) complete in described photoetching the epitaxial wafer of n-type electrode figure utilizes electron beam evaporation equipment graph area deposition Ni/Au metal level in n-type electrode layer, in quick anneal oven, then during short annealing, form n-type electrode;
(11) after utilizing photoresist material protection p-type and n-type electrode, it may also be useful to PECVD device steams plating 200 Nano-meter SiO_22Passivation layer;
(12) steam on plating SiO2 passivation layer epitaxial wafer described completing, carry out being thinned to the chip length of side, the scribing of 0.3 times, form upside-down mounting deep-UV light-emitting diode chip;
(13) in described upside-down mounting deep-UV light-emitting diode chip sapphire face, utilize electron beam evaporation equipment to steam plating 150 nanometers of Al films, form the upside-down mounting deep-UV light-emitting diode of high light-emitting efficiency.
Chip selection provided by the invention adopts has the reflexive Ni/Al material of high UV-light as p-type electrode materials, not only can partly improve the ohm contact performance of metal electrode and p-type GaN, UV-light also can reflex to sapphire face;Meanwhile, epitaxial wafer reducing thin of sapphire substrate to specific thicknesses, and steam the Al film of plating suitable thickness, by being coupled of TM pattern UV-light and surface phasmon, the surperficial light extraction efficiency of raising upside-down mounting deep-UV light-emitting diode chip further.
The above most preferred embodiment being the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations. Within the spirit and principles in the present invention all, any amendment of doing, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the upside-down mounting deep-UV light-emitting diode chip of a high light-emitting efficiency, it is characterised in that: it is the 0.3-0.5 times of c surface sapphire substrate to the chip length of side, low temperature AI N nucleating layer, PALEAlN buffer layer, high-temperature AlN intrinsic layer, n type Al that this chip structure order from bottom to top is followed successively by thicknessxGa1-xN layer, AlyGa1-yN/AlzGa1-zN multiple quantum well layer, p-type AluGa1-uN electron blocking layer, p-type GaN layer, Ni/Al UV-light high-reflectivity electrode layer, the c surface sapphire substrate back side is provided with Al film.
2. high light-emitting efficiency upside-down mounting deep-UV light-emitting diode chip as claimed in claim 1, it is characterised in that: the Al film thickness of described substrate back is 1-10 nanometer.
3. high light-emitting efficiency upside-down mounting deep-UV light-emitting diode chip as claimed in claim 1, it is characterised in that: described Ni/Al electrode materials, Ni material thickness is 1-5 nanometer, and Al material thickness is 100-300 nanometer.
4. high light-emitting efficiency upside-down mounting deep-UV light-emitting diode chip as claimed in claim 1, it is characterised in that: described p-type GaN thickness is 1-20 nanometer.
5. the preparation method of the upside-down mounting deep-UV light-emitting diode chip of a high light-emitting efficiency, it is characterised in that, comprise the steps:
(1) in c surface sapphire substrate, utilize MOCVD technique, described underlayer temperature is reduced to 600 DEG C, growing low temperature AlN nucleating layer;
(2) on described low temperature AI N nucleating layer, growth temperature is elevated to 1050 DEG C, growth PALEAlN buffer layer;
(3) on described PALEAlN buffer layer, growth temperature is elevated to 1300 DEG C, growth high-temperature AlN intrinsic layer;
(4) on described high-temperature AlN intrinsic layer, growth temperature is remained on 1150 DEG C, growing n-type AlxGa1-xN layer;
(5) at described n type AlxGa1-xOn N layer, growth temperature is remained on 1150 DEG C, growth AlyGa1-yN/AlzGa1-zN multiple quantum well layer;
(6) growth temperature is remained on 1150 DEG C, at described AlyGa1-yN/AlzGa1-zOn N multiple quantum well layer, growth p-type AluGa1-uN electron blocking layer;
(7) growth temperature is remained on 1050 DEG C, at described p-type AluGa1-uN electron grows p-type GaN layer on blocking layer, forms deep-UV light-emitting diode epitaxial wafer;
(8) in described p-type GaN layer, make the figure of p-type electrode by lithography, then utilize electron beam evaporation equipment to deposit Ni/Al metal level in p-type electrode pattern district, and short annealing forms UV-light high-reflectivity p-type electrode;
(9), on epitaxial wafer after the described UV-light high-reflectivity p-type electrode that completes, ICP/RIE equipment is utilized to be etched to n type AlxGa1-xN layer, and at n type AlxGa1-xN layer table top makes by lithography the figure of n-type electrode;
(10) depositing metal layers on the described epitaxial wafer being carved with n-type electrode figure, and form n-type electrode in short annealing;
(11) after utilizing photoresist material protection p-type and n-type electrode, it may also be useful to PECVD device steams plating SiO2Passivation layer;
(12) plating SiO is steamed described completing2On passivation layer epitaxial wafer, sapphire is thinned to specific thicknesses, scribing, forms upside-down mounting deep-UV light-emitting diode chip;
(13) in described upside-down mounting deep-UV light-emitting diode chip sapphire face, utilize electron beam evaporation equipment evaporating Al film, form the deep-UV light-emitting diode of high light-emitting efficiency.
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| CN108963037A (en) * | 2017-05-27 | 2018-12-07 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of deep ultraviolet LED chip |
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| CN110459658A (en) * | 2018-05-08 | 2019-11-15 | 山东浪潮华光光电子股份有限公司 | A kind of UV LED chip of p-type GaN layer and preparation method thereof |
| CN110676357A (en) * | 2019-08-28 | 2020-01-10 | 南京南邮信息产业技术研究院有限公司 | Ultra-thin structure deep ultraviolet LED and preparation method thereof |
| CN111640834A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | Growth method of Al-rich component nitride material of aluminum substrate and aluminum substrate structure |
| CN112420887A (en) * | 2020-11-20 | 2021-02-26 | 广东省科学院半导体研究所 | Deep ultraviolet LED device and manufacturing method thereof |
| CN112713227A (en) * | 2020-12-25 | 2021-04-27 | 至芯半导体(杭州)有限公司 | Method for improving light extraction efficiency of TM (transverse magnetic) mode of ultraviolet AlInGaN light-emitting diode |
| CN113903762A (en) * | 2021-10-08 | 2022-01-07 | 中紫半导体科技(东莞)有限公司 | Deep ultraviolet array interconnection micro-LED and preparation method thereof |
| CN114108082A (en) * | 2021-11-24 | 2022-03-01 | 华中科技大学鄂州工业技术研究院 | Preparation method of ultrathin GaN quantum well deep ultraviolet laser and deep ultraviolet laser |
| CN114171652A (en) * | 2020-09-11 | 2022-03-11 | 北京大学 | Structure for improving AlGaN-based DUV-LED light extraction efficiency and application thereof |
| CN115566118A (en) * | 2022-10-28 | 2023-01-03 | 苏州汉骅半导体有限公司 | Deep ultraviolet LED chip and preparation method thereof |
| CN116344692A (en) * | 2023-05-26 | 2023-06-27 | 中诚华隆计算机技术有限公司 | LED epitaxial structure, LED chip and preparation method thereof |
| CN114171652B (en) * | 2020-09-11 | 2024-04-19 | 北京大学 | Structure for improving light extraction efficiency of AlGaN-based DUV-LED and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108963038A (en) * | 2017-05-27 | 2018-12-07 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of deep ultraviolet LED chip |
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