CN103985805A - P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method - Google Patents
P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method Download PDFInfo
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Abstract
The invention discloses a P thick aluminum electrode of an LED chip, etchant for manufacturing the thick aluminum electrode and a thick aluminum electrode manufacturing method and belongs to the technical field of LED electrode manufacturing. The P electrode comprises a contact electrode and a bonding wire electrode. The contact electrode comprises a first gold-plated layer, a gold-beryllium layer and a second gold-plated layer. The thickness of a first titanium-plated layer of the bonding wire electrode ranges from 900 to 1100 , and the thickness of a thick aluminum layer of the bonding wire electrode ranges from 24000 to 30000 . The etchant comprises titanium etchant, aluminum etchant and gold etchant. The etchant is simple in composition and reasonable in matching ratio. The deformation problem of electrode patterns etched with a wet method caused by increase in the thickness of a metal layer of the electrode is avoided. According to the P thick aluminum electrode manufacturing method, photoetching and wet method etching are conducted on the P thick aluminum electrode of the LED chip in sequence so as to obtain the bonding wire electrode with the thickness moderately increased, and the P thick aluminum electrode manufacturing method is simple in technology and good in repeatability. Through the P thick aluminum electrode of the LED chip, the etchant for manufacturing the thick aluminum electrode and the thick aluminum electrode manufacturing method, the problems of cold joint and separation between the bonding wire electrode and a packaging wire are well solved.
Description
Technical field
The present invention relates to LED electrode fabrication field, more particularly, relate to the thick aluminium electrode of a kind of LED chip P face, prepare thick aluminium electrode etching liquid and thick aluminium electrode preparation method.
Background technology
Light-emitting diode (LED) is a kind of illuminating device with plurality of advantages such as luminous efficiency is high, power consumption is little, the life-span is long, caloric value is low, volume is little, environmental protection and energy saving, thereby have a wide range of applications market, as fields such as automobile, backlight, traffic lights, large scale display, military affairs.The conventional structure of LED chip comprises a semiconductor light emitting structure that produces afterwards light radiation in energising, and the electrode that is connected with extraneous power supply of this semiconductor structure.What LED chip designed focuses on improving the light radiation efficiency of semiconductor structure and the quality of connection of raising semiconductor structure and extraneous power supply.
Conventionally the p side electrode of LED chip is divided into two-layer up and down: ground floor is contact electrode, contact electrode and LED chip P face form ohmic contact, reduce the contact resistance of electrode and chip P face, while making electric current conduct to LED chip P face by electrode, resistance is less, improves the heating of outer quantum effect and reduction chip; The second layer is bonding wire electrode, for contacting of electrode and packaging conductive wire.The manufacture method of LED chip P face ground floor electrode is to distinguish gold evaporation/golden beryllium/gold layer at the P of LED chip face by vacuum coating technology, and rear photoetching electrode pattern corrosion forms contact electrode, finally forms ohmic contact by alloy; Second layer electrode is again by vacuum coating technology evaporation titanium/aluminium or titanium/gold layer, after carry out contraposition photoetching electrode pattern corrosion formation bonding wire electrode.
For the consideration of production cost, packaging conductive wire use alloy wire (gold copper) is main at present, and bonding wire electrode material uses titanium aluminium and titanium material.Due to titanium aluminium cost, to compare titanium much lower, more and more becomes the trend of industry development so adopt titanium aluminum to prepare bonding wire electrode.But due to factors such as golden copper product and aluminum self chemical property, make golden copper product and aluminum be difficult for firmly welding, and the aluminium of electrode surface is oxidizable and stain organic substance, dust etc., oxidation, the slight meeting of contamination phenomenon form rosin joint after causing bonding wire, bonding wire electrode and packaging conductive wire failure welding, cause Surface Contact voltage to raise; When serious, can cause wire and electrode to depart from, finally make the LED chip after encapsulation lose efficacy.Above-mentioned factor has had a strong impact on titanium aluminium applying as bonding wire electrode material.
Tradition improves P face bonding wire electrode and packaging conductive wire welding quality has following methods: (1) with an organic solvent cleans P face bonding wire electrode, but the method can only be removed organic substance and the dust etc. of electrode surface, water consumption is large, can not fundamentally improve bonding wire quality; (2) adopt PLASMA (plasma cleaning), though the method can be removed electrode surface organic substance and dust, easily cause electrode surface aluminium over oxidation, cause bonding wire difficulty and touch voltage to increase.
Through retrieval, about the problem that improves LED chip electrode bonding wire quality, Chinese Patent Application No. 200510107751.4, the applying date is on October 6th, 2005, invention and created name is: a kind of electrode preparation method of light-emitting diode, this application case adds adhesion layer that one deck adhesiveness is strong to avoid routing disk detachment between conventional routing dish and semiconductor light emitting structure, by routing panel surface roughening to improve the bonding strength of routing dish and external wire bond.
Also have by the scheme of evaporation different-thickness metal level raising LED chip electrode quality open, as China Patent No. ZL03146826.8, Granted publication day is on April 23rd, 2008, and invention and created name is: sapphire substrate LED chip method for making its electrode; This application case is passed through evaporation the first thickness nickel, the second thickness gold, the 3rd thickness nickel, the 4th thickness gold, the 5th thickness titanium, the 6th thick aluminium, the 7th thickness nickel and the 8th thickness gold successively, realizes the raising of LED chip electrode quality.But above-mentioned application case is not also suitable for solution because of golden copper product and the difficult firmly welding of aluminum, rosin joint, disengaging problem between bonding wire electrode and the packaging conductive wire causing.
Summary of the invention
1. the technical problem that invention will solve
The object of the invention is to overcome the P face bonding wire electrode of existing semiconductor light-emitting-diode (LED) and the deficiency of packaging conductive wire poor welding quality, the thick aluminium electrode of a kind of LED chip P face is provided, has prepared thick aluminium electrode etching liquid and thick aluminium electrode preparation method.The P face bonding wire electrode of LED chip of the present invention adopts titanium/aluminium-vapour deposition layer, and from cost-saving and guarantee welding quality angle consider, determine the optimum thickness of the each evaporation layer of P face bonding wire electrode, technical scheme provided by the invention has well solved rosin joint, the disengaging problem between bonding wire electrode and packaging conductive wire, and can not cause that LED chip P face touch voltage raises, and has reduced the production cost of LED chip simultaneously.
2. technical scheme
For achieving the above object, technical scheme provided by the invention is:
The thick aluminium electrode of a kind of LED chip P face of the present invention, comprises contact electrode and bonding wire electrode, and described contact electrode comprises the first Gold plated Layer, golden beryllium layer and the second Gold plated Layer, and the thickness of the first described Gold plated Layer is
the thickness of gold beryllium layer is
the thickness of the second Gold plated Layer is
described bonding wire electrode comprises the first titanizing layer and thick aluminium lamination, and the thickness of the first titanizing layer is
the thickness of thick aluminium lamination is
Further, the thickness of the first described Gold plated Layer is
the thickness of gold beryllium layer is
the thickness of the second Gold plated Layer is
the thickness of the first described titanizing layer is
the thickness of thick aluminium lamination is
One of the present invention is prepared the thick aluminium electrode of LED chip etching liquid, comprises titanium etching liquid, aluminium etching liquid and golden etching liquid, and described titanium etching liquid is made up of hydrogen fluoride and ammonium fluoride solution, and the volume ratio of this hydrogen fluoride and ammonium fluoride solution is 1:4-9; Described aluminium etching liquid is the mixed liquor of phosphoric acid and nitric acid; Described golden etching liquid is the mixed liquor of iodine and KI, and the mass ratio of iodine and KI is 1:1-3.
The preparation method of the thick aluminium electrode of a kind of LED chip of the present invention, the steps include:
The preparation of step 1, contact electrode:
A, vacuum coating: in LED chip P face successively evaporation the first Gold plated Layer, golden beryllium layer and the second Gold plated Layer, the thickness of the first Gold plated Layer is
the thickness of gold beryllium layer is
the thickness of the second Gold plated Layer is
B, photoetching: the metal level after step a plated film is carried out to photoengraving processing, do not need the region of etching to use positive photoresist protection;
C, wet etching: to carrying out wet etching, the cleaning of then removing photoresist through the each metal level of step b LED chip P after treatment face contact electrode;
D, alloy: to carrying out high temperature fusion treatment through step c LED chip after treatment;
The preparation of step 2, bonding wire electrode:
E, vacuum coating: evaporation the first titanizing layer and thick aluminium lamination successively on LED chip P face contact electrode, the thickness of the first titanizing layer is
the thickness of thick aluminium lamination is
F, photoetching: the metal level after step e plated film is carried out to photoengraving processing, do not need the region of etching to use positive photoresist protection;
G, wet etching: to carrying out wet etching, the cleaning of then removing photoresist through the each metal level of step f LED chip P after treatment face bonding wire electrode.
Further, the vacuum coating of step a and e is processed and is less than 3.0 × 10 at pressure
-5under Pa condition, carry out.
Further, the vacuum coating process described in step e is: 1) under the temperature conditions of 80-100 DEG C, use
speed evaporation the first titanizing layer; 2) under the temperature conditions of 20-30 DEG C, use
the thick aluminium lamination of speed evaporation.
Further, the viscosity of the positive photoresist that step b and f use is 30-50PaS, and the application rate of positive photoresist is 3000-4000r/min.
Further, the etching liquid that wet etching adopts described in step c is the mixed solution of iodine and KI, and the mass ratio of iodine and KI is 1:1-3.
Further, the 400-500 DEG C of high temperature under nitrogen atmosphere of the alloy treatment described in steps d merges 8-12min.
Further, the etching liquid in wet etching treatment, the first titanizing layer being adopted described in step g is the mixed solution of hydrogen fluoride and ammonium fluoride, and the volume ratio of hydrogen fluoride and ammonium fluoride solution is 1:4-9; The etching liquid that thick aluminium lamination is adopted is the mixed liquor of phosphoric acid and nitric acid.
3. beneficial effect
Adopt technical scheme provided by the invention, compared with existing known technology, there is following remarkable result:
(1) the thick aluminium electrode of a kind of LED chip P face of the present invention, its bonding wire electrode adopts the relatively low titanium aluminum of price, bonding wire electrode is evaporation the first titanizing layer and thick aluminium lamination successively, and from cost-saving and guarantee welding quality angle consider, determine the optimum thickness of the each evaporation layer of P face bonding wire electrode, by the suitable increase of P face bonding wire electrode metal layer thickness, effectively reduce because electrode surface stains, rosin joint and value of thrust damaged and that oxidation causes are too low, reduce the inefficacy that LED product causes owing to opening circuit, improved yield;
(2) one of the present invention is prepared the thick aluminium electrode of LED chip etching liquid, the composition of its titanium etching liquid, aluminium etching liquid and golden etching liquid is simple, reasonable mixture ratio, avoid because wet etching exists isotropism, electrode pattern problem on deformation in the wet etching process that the increase of P face bonding wire electrode metal layer thickness causes, has ensured the quality of p side electrode;
(3) preparation method of the thick aluminium electrode of a kind of LED chip of the present invention, technique is simple, reproducible, LED chip p side electrode is carried out to the bonding wire electrode that photoetching and wet etching treatment increase to obtain thickness appropriateness successively, and by improving composition and the etching condition of etching liquid in wet etching, avoided electrode pattern problem on deformation in wet etching process that thickness of electrode increase causes, bonding wire electrode is combined tightr with packaging conductive wire, the risk that has fundamentally reduced electrode rosin joint and come off.
Brief description of the drawings
Fig. 1 is the side profile figure of the thick aluminium electrode of LED chip P face of the present invention.
Label declaration in schematic diagram:
11, the first Gold plated Layer; 12, golden beryllium layer; 13, the second Gold plated Layer; 21, the first titanizing layer; 22, thick aluminium lamination.
Embodiment
For further understanding content of the present invention, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.
Embodiment 1
In conjunction with Fig. 1, the thick aluminium electrode of a kind of LED chip P face of the present embodiment, comprises contact electrode and bonding wire electrode, and described contact electrode comprises the first Gold plated Layer 11, golden beryllium layer 12 and the second Gold plated Layer 13, and the thickness of the first described Gold plated Layer 11 is
the thickness of gold beryllium layer 12 is
the thickness of the second Gold plated Layer 13 is
described bonding wire electrode comprises that the thickness of the first titanizing layer 21, thick aluminium lamination 22 and the second titanizing layer 23, the first titanizing layer 21 is
the thickness of thick aluminium lamination 22 is
The LED chip of the present embodiment, its bonding wire electrode adopts the relatively low titanium aluminum of price, be difficult for the firmly problem of welding in order to solve titanium aluminum with encapsulation alloy wire, inventor is using conventional organic solvents to clean, plasma cleaning P face bonding wire electrode does not all reach in the situation of ideal effect, feel free to try and increase bonding wire electrode metal layer thickness, and through test of many times, from cost-saving and guarantee welding quality angle consider, the first titanizing layer 21 of P face bonding wire electrode and the optimum thickness of thick aluminium lamination 22 are determined, by the suitable increase of P face bonding wire electrode metal layer thickness, effectively reduce because electrode surface stains, rosin joint and value of thrust damaged and that oxidation causes are too low, the electrode surface touch voltage causing raises, the Problem of Failure that LED product causes owing to opening circuit, improve LED chip yield, reduced the use of Precious Metals-Gold simultaneously, reduce enterprise's production cost.
In addition, there is isotropism in the wet etching method of preparing the thick aluminium electrode use of P face due to the present embodiment, electrode pattern problem on deformation in the wet etching process causing for fear of the increase of P face bonding wire electrode metal layer thickness, ensure electrode quality, the present embodiment provides one to prepare the thick aluminium electrode of LED chip etching liquid, comprise titanium etching liquid, aluminium etching liquid and golden etching liquid, described titanium etching liquid is made up of hydrogen fluoride and ammonium fluoride solution, and the volume ratio of this hydrogen fluoride and ammonium fluoride solution is 1:5; Described aluminium etching liquid is the mixed liquor of phosphoric acid and nitric acid; Described golden etching liquid is the mixed liquor of iodine and KI, and the mass ratio of iodine and KI is 1:2.
The preparation method of the thick aluminium electrode of a kind of LED chip of the present embodiment, its preparation process is:
By vacuum coating technology, be less than 3.0 × 10 at plated film chamber pressure at LED chip P face
-5under Pa condition, by crucible and tungsten boat evaporation mode, the thickness of evaporation the first Gold plated Layer 11, golden beryllium layer 12 and the second Gold plated Layer 13, the first Gold plated Layer 11 is successively
the thickness of gold beryllium layer 12 is
the thickness of the second Gold plated Layer 13 is
Use the positive photoresist that viscosity is 40PaS; under the even adhesive tape part of 3500r/min; positive photoresist is uniformly coated on to the P face of LED chip; then on mask aligner, utilize reticle, as mask, LED chip is carried out to photoetching treatment; the region of required making electrode is used positive photoresist protection; mixed solution by iodine and KI is optionally removed metal level under normal temperature condition, and the mass ratio of iodine and KI is 1:2.In the time of the golden disappearance in LED chip surface, take out LED chip and use deionized water rinsing 5 minutes, then use glue-dispenser to soak 30 minutes under 80 DEG C of conditions, use deionized water rinsing 5 minutes, finally dry up with hot nitrogen.Afterwards chip is carried out to high temperature fusion (the lower 450 DEG C of alloys of nitrogen atmosphere 10 minutes), make the metal film on evaporation become ohmic contact with contacting from Schottky contacts of chip, to reduce the contact resistance of contact electrode and LED chip P face.
LED chip after high temperature merges by vacuum coating technology, is less than 3.0 × 10 at plated film chamber pressure again
-5under Pa condition, by crucible evaporation mode, first under the temperature conditions of 90 DEG C, use
speed evaporation
the first titanizing layer 21; At 25 DEG C, use afterwards
speed evaporation
the thick aluminium lamination 22 of thickness.
Use the positive photoresist that viscosity is 40PaS; gluing under the even adhesive tape part of 3500r/min; the region that need to leave metal level after using mask aligner selectivity to expose is protected with photoresist; then remove by wet etching the metal level that needs etching, the present embodiment is as follows to the wet-etching technology condition of the each metal level of P face bonding wire electrode:
The etching of thick aluminium lamination 22: the mixed liquor that uses phosphoric acid and nitric acid, be heated under 45 DEG C of conditions thick aluminium lamination 22 is carried out to etching, within about 500 seconds, left and right etching completes, and now LED chip surface color becomes grey from white, use deionized water rinsing 5 minutes after etching completes.
The etching of the first titanizing layer 21: adopt hydrogen fluoride and ammonium fluoride mixed solution that volume ratio is 1:5, under normal temperature condition, the first titanizing layer 21 is carried out to etching, left and right etching completed in about 3 seconds, is used deionized water rinsing 5 minutes.
The present embodiment technique is simple, reproducible, LED chip p side electrode is carried out to the bonding wire electrode that photoetching and wet etching treatment increase to obtain thickness appropriateness successively, and by improving composition and the etching condition of etching liquid in wet etching, avoid electrode pattern problem on deformation in wet etching process that thickness of electrode increase causes, bonding wire electrode is combined tightr with packaging conductive wire, the risk that has fundamentally reduced electrode rosin joint and come off.
Embodiment 2
The thick aluminium electrode of a kind of LED chip P face of the present embodiment, the first Gold plated Layer 11 thickness of contact electrode are
the thickness of gold beryllium layer 12 is
the thickness of the second Gold plated Layer 13 is
the first titanizing layer 21 thickness of bonding wire electrode are
the thickness of thick aluminium lamination 22 is
The preparation method of the thick aluminium electrode of a kind of LED chip of the present embodiment, its detailed process is:
By vacuum coating technology, be less than 3.0 × 10 at plated film chamber pressure at LED chip P face
-5under Pa condition, by crucible and tungsten boat evaporation mode, evaporation the first Gold plated Layer 11, golden beryllium layer 12 and the second Gold plated Layer 13 successively.
Use the positive photoresist that viscosity is 40PaS; under the even adhesive tape part of 3000r/min; positive photoresist is uniformly coated on to the P face of LED chip; then on mask aligner, utilize reticle, as mask, LED chip is carried out to photoetching treatment; the region of required making electrode is used positive photoresist protection; mixed solution by iodine and KI is optionally removed metal level under normal temperature condition, and the mass ratio of iodine and KI is 1:3.In the time of the golden disappearance in LED chip surface, take out LED chip and use deionized water rinsing 6 minutes, then use glue-dispenser to soak 35 minutes under 85 DEG C of conditions, use deionized water rinsing 5 minutes, finally dry up with hot nitrogen.Afterwards chip is carried out to high temperature fusion (the lower 400 DEG C of alloys of nitrogen atmosphere 10 minutes), make the metal film on evaporation become ohmic contact with contacting from Schottky contacts of chip, to reduce the contact resistance of contact electrode and LED chip P face.
LED chip after high temperature merges by vacuum coating technology, is less than 3.0 × 10 at plated film chamber pressure again
-5under Pa condition, by crucible evaporation mode, first under the temperature conditions of 80 DEG C, use
speed evaporation the first titanizing layer 21; At 20 DEG C, use afterwards
speed evaporation obtain thickness and be
thick aluminium lamination 22.
Then; use the positive photoresist that viscosity is 40PaS; gluing under the even adhesive tape part of 3000r/min; the region that need to leave metal level after using mask aligner selectivity to expose is protected with photoresist; then remove by wet etching the metal level that needs etching; the etching liquid that the present embodiment uses and wet-etching technology condition, substantially with embodiment 1, repeat no more herein.
Embodiment 3
The thick aluminium electrode of a kind of LED chip P face of the present embodiment, the thickness of the first Gold plated Layer 11 of contact electrode is
the thickness of gold beryllium layer 12 is
the thickness of the second Gold plated Layer 13 is
the first titanizing layer 21 thickness of bonding wire electrode are
the thickness of thick aluminium lamination 22 is
The preparation method of the thick aluminium electrode of a kind of LED chip of the present embodiment, its detailed process is:
By vacuum coating technology, be less than 3.0 × 10 at plated film chamber pressure at LED chip P face
-5under Pa condition, by crucible and tungsten boat evaporation mode, evaporation the first Gold plated Layer 11, golden beryllium layer 12 and the second Gold plated Layer 13 successively.
Use the positive photoresist that viscosity is 40PaS; under the even adhesive tape part of 4000r/min; positive photoresist is uniformly coated on to the P face of LED chip; then on mask aligner, utilize reticle, as mask, LED chip is carried out to photoetching treatment; the region of required making electrode is used positive photoresist protection; mixed solution by iodine and KI is optionally removed metal level under normal temperature condition, and the mass ratio of iodine and KI is 1:1.In the time of the golden disappearance in LED chip surface, take out LED chip and use deionized water rinsing 4 minutes, then use glue-dispenser to soak 28 minutes under 75 DEG C of conditions, use deionized water rinsing 5 minutes, finally dry up with hot nitrogen.Afterwards chip is carried out to high temperature fusion (the lower 500 DEG C of alloy 12min of nitrogen atmosphere), make the metal film on evaporation become ohmic contact with contacting from Schottky contacts of chip, to reduce the contact resistance of contact electrode and LED chip P face.
LED chip after high temperature merges by vacuum coating technology, is less than 3.0 × 10 at plated film chamber pressure again
-5under Pa condition, by crucible evaporation mode, first under the temperature conditions of 100 DEG C, use
speed evaporation the first titanizing layer 21; At 30 DEG C, use afterwards
speed evaporation obtain thickness and be
thick aluminium lamination 22.
Then; use the positive photoresist that viscosity is 40PaS; gluing under the even adhesive tape part of 4000r/min; the region that need to leave metal level after using mask aligner selectivity to expose is protected with photoresist; then remove by wet etching the metal level that needs etching; the etching liquid that the present embodiment uses and wet-etching technology condition, substantially with embodiment 1, repeat no more herein.
Embodiment 4
The thick aluminium electrode of a kind of LED chip P face of the present embodiment, prepare thick aluminium electrode etching liquid and thick aluminium electrode preparation method, substantially with embodiment 1, its difference is: the process of evaporation the first titanizing layer 21 and thick aluminium lamination 22 is: be less than 3.0 × 10 at plated film chamber pressure
-5under Pa condition, by crucible evaporation mode, first under the temperature conditions of 90 DEG C, use
speed evaporation
the first titanizing layer 21; At 25 DEG C, use afterwards
speed evaporation
the thick aluminium lamination 22 of thickness.Repeat aforesaid operations twice, wherein last evaporation
the aluminium lamination of thickness, evaporation obtains thickness and is
thick aluminium lamination 22.The present embodiment considers that thick aluminium lamination 22 thickness are larger, the evaporation of thick aluminium lamination 22 is divided and carried out for three times, and under different temperatures and rate conditions, evaporation the first titanizing layer 21 and thick aluminium lamination 22, guaranteed that each metal layer thickness is even, evaporation is effective, and the high-quality that is conducive to subsequent etch processing carries out.
Embodiment 5
The thick aluminium electrode of a kind of LED chip P face of the present embodiment, prepare thick aluminium electrode etching liquid and thick aluminium electrode preparation method, substantially with embodiment 1, its difference is: the process of evaporation the first titanizing layer 21 and thick aluminium lamination 22 is: be less than 3.0 × 10 at plated film chamber pressure
-5under Pa condition, by crucible evaporation mode, first under the temperature conditions of 100 DEG C, use
speed evaporation the first titanizing layer 21; At 30 DEG C, use afterwards
speed evaporation
the aluminium lamination of thickness, then use under 25 DEG C of conditions
speed evaporation
the aluminium lamination of thickness finally uses at 20 DEG C
evaporation
the aluminium lamination of thickness, evaporation obtains thickness and is
thick aluminium lamination 22.
The thick aluminium electrode of a kind of LED chip P face described in embodiment 1～5, prepare thick aluminium electrode etching liquid and thick aluminium electrode preparation method, the bonding wire electrode and the packaging conductive wire poor welding quality that exist for the p side electrode of existing semiconductor light-emitting-diode (LED), easily rosin joint and cause LED product failure problem because electrode comes off, pass through many experiments, determine and can meet technological requirement, avoided excessively increasing again the technical scheme of thickness of electrode as far as possible.Packaging conductive wire and bonding wire electrode, in conjunction with tightr, can not cause that LED chip P face touch voltage raises, the risk that has fundamentally reduced electrode rosin joint and come off.By improving composition and the etching condition of etching liquid, avoid because wet etching exists isotropism, the generation of electrode pattern distortion in the wet etching process that thickness of electrode causes after increasing, P face bonding wire electrode adopts titanium aluminum, reduce the use of Precious Metals-Gold, reduced enterprise's production cost.
Below schematically the present invention and execution mode thereof are described, this description does not have restricted, and shown in accompanying drawing is also one of embodiments of the present invention, and actual structure is not limited to this.So, if those of ordinary skill in the art is enlightened by it, in the situation that not departing from the invention aim, without the creationary frame mode similar to this technical scheme and the embodiment of designing, all should belong to protection scope of the present invention.
Claims (10)
1. the thick aluminium electrode of LED chip P face, comprise contact electrode and bonding wire electrode, it is characterized in that: described contact electrode comprises the first Gold plated Layer (11), golden beryllium layer (12) and the second Gold plated Layer (13), the thickness of described the first Gold plated Layer (11) is
the thickness of gold beryllium layer (12) is
the thickness of the second Gold plated Layer (13) is
described bonding wire electrode comprises the first titanizing layer (21) and thick aluminium lamination (22), and the thickness of the first titanizing layer (21) is
the thickness of thick aluminium lamination (22) is
2. the thick aluminium electrode of a kind of LED chip P face according to claim 1, is characterized in that: the thickness of described the first Gold plated Layer (11) is
the thickness of gold beryllium layer (12) is
the thickness of the second Gold plated Layer (13) is
the thickness of the first described titanizing layer (21) is
the thickness of thick aluminium lamination (22) is
3. prepare the thick aluminium electrode of a LED chip etching liquid, it is characterized in that: comprise titanium etching liquid, aluminium etching liquid and golden etching liquid, described titanium etching liquid is made up of hydrogen fluoride and ammonium fluoride solution, and the volume ratio of this hydrogen fluoride and ammonium fluoride solution is 1:4-9; Described aluminium etching liquid is the mixed liquor of phosphoric acid and nitric acid; Described golden etching liquid is the mixed liquor of iodine and KI, and the mass ratio of iodine and KI is 1:1-3.
4. a preparation method for the thick aluminium electrode of LED chip, the steps include:
The preparation of step 1, contact electrode:
A, vacuum coating: in LED chip P face successively evaporation the first Gold plated Layer (11), golden beryllium layer (12) and the second Gold plated Layer (13), the thickness of the first Gold plated Layer (11) is
the thickness of gold beryllium layer (12) is
the thickness of the second Gold plated Layer (13) is
B, photoetching: the metal level after step a plated film is carried out to photoengraving processing, do not need the region of etching to use positive photoresist protection;
C, wet etching: to carrying out wet etching, the cleaning of then removing photoresist through the each metal level of step b LED chip P after treatment face contact electrode;
D, alloy: to carrying out high temperature fusion treatment through step c LED chip after treatment;
The preparation of step 2, bonding wire electrode:
E, vacuum coating: evaporation the first titanizing layer (21) and thick aluminium lamination (22) successively on LED chip P face contact electrode, the thickness of the first titanizing layer (21) is
the thickness of thick aluminium lamination (22) is
F, photoetching: the metal level after step e plated film is carried out to photoengraving processing, do not need the region of etching to use positive photoresist protection;
G, wet etching: to carrying out wet etching, the cleaning of then removing photoresist through the each metal level of step f LED chip P after treatment face bonding wire electrode.
5. the preparation method of the thick aluminium electrode of a kind of LED chip according to claim 4, is characterized in that: the vacuum coating of step a and e is processed and is less than 3.0 × 10 at pressure
-5under Pa condition, carry out.
6. the preparation method of the thick aluminium electrode of a kind of LED chip according to claim 5, is characterized in that: the vacuum coating process described in step e is: 1) under the temperature conditions of 80-100 DEG C, use
speed evaporation the first titanizing layer (21); 2) under the temperature conditions of 20-30 DEG C, use
the thick aluminium lamination of speed evaporation (22).
7. according to the preparation method of the thick aluminium electrode of a kind of LED chip described in claim 5 or 6, it is characterized in that: the viscosity of the positive photoresist that step b and f use is 30-50PaS, and the application rate of positive photoresist is 3000-4000r/min.
8. the preparation method of the thick aluminium electrode of a kind of LED chip according to claim 7, is characterized in that: the etching liquid that described in step c, wet etching adopts is the mixed solution of iodine and KI, and the mass ratio of iodine and KI is 1:1-3.
9. the preparation method of the thick aluminium electrode of a kind of LED chip according to claim 8, is characterized in that: the 400-500 DEG C of high temperature under nitrogen atmosphere of the alloy treatment described in steps d merges 8-12min.
10. the preparation method of the thick aluminium electrode of a kind of LED chip according to claim 9, it is characterized in that: the etching liquid in wet etching treatment, the first titanizing layer (21) being adopted described in step g is the mixed solution of hydrogen fluoride and ammonium fluoride, and the volume ratio of hydrogen fluoride and ammonium fluoride solution is 1:4-9; The etching liquid that thick aluminium lamination (22) is adopted is the mixed liquor of phosphoric acid and nitric acid.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409597A (en) * | 2014-11-14 | 2015-03-11 | 无锡科思电子科技有限公司 | Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process |
| CN105355727A (en) * | 2015-10-22 | 2016-02-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light-emitting diode chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318837A (en) * | 2000-02-16 | 2001-10-24 | 松下电器产业株式会社 | Actuator, message recording/reproduction device and method for producing actuator |
| CN101276865A (en) * | 2008-04-30 | 2008-10-01 | 扬州华夏集成光电有限公司 | Technique for preparing light emitting diode |
| JP2009532895A (en) * | 2006-08-31 | 2009-09-10 | エピヴァレー カンパニー リミテッド | Group III nitride semiconductor light emitting device |
| CN203859143U (en) * | 2014-05-28 | 2014-10-01 | 马鞍山太时芯光科技有限公司 | LED chip P surface thick aluminum electrode |
-
2014
- 2014-05-28 CN CN201410233154.5A patent/CN103985805B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1318837A (en) * | 2000-02-16 | 2001-10-24 | 松下电器产业株式会社 | Actuator, message recording/reproduction device and method for producing actuator |
| JP2009532895A (en) * | 2006-08-31 | 2009-09-10 | エピヴァレー カンパニー リミテッド | Group III nitride semiconductor light emitting device |
| CN101276865A (en) * | 2008-04-30 | 2008-10-01 | 扬州华夏集成光电有限公司 | Technique for preparing light emitting diode |
| CN203859143U (en) * | 2014-05-28 | 2014-10-01 | 马鞍山太时芯光科技有限公司 | LED chip P surface thick aluminum electrode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409597A (en) * | 2014-11-14 | 2015-03-11 | 无锡科思电子科技有限公司 | Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process |
| CN105355727A (en) * | 2015-10-22 | 2016-02-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light-emitting diode chip |
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