CN101276865A

CN101276865A - Technique for preparing light emitting diode

Info

Publication number: CN101276865A
Application number: CNA2008100252948A
Authority: CN
Inventors: 曾金穗; 曾文煌; 薛宝林
Original assignee: YANGZHOU HUAXIA INTEGRATED PHOTOELECTRIC CO Ltd
Current assignee: YANGZHOU HUAXIA INTEGRATED PHOTOELECTRIC CO Ltd
Priority date: 2008-04-30
Filing date: 2008-04-30
Publication date: 2008-10-01
Anticipated expiration: 2028-04-30
Also published as: CN101276865B

Abstract

The invention relates to a LED manufacturing technique, belonging to the field of LED technology, for overcoming a plurality of defect in current aluminum electrode LED manufacturing process, with the following main character of: taking tin indium oxide N-type conductive substance as a N electrode of LED with better contact of an epitaxial sheet, so as to produce the N electrode by grinding to thin the substrate after forming a P electrode of thick aluminum opened picture photo-etching, to avoid the problem of hardening aluminum caused by alloy needed by N electrode production in the former technique. The invention is capable of reducing labor for producing quarternary LED which saves cost, and reducing broken piece problem in the manufacturing process which is convenient for enterprise manufacture, and beneficial to enhance product quality and production efficiency, which reduces production cost and enhances economic benefit of enterprise.

Description

A kind of technique for preparing light emitting diode

Technical field

The present invention relates to a kind of technique for preparing light emitting diode, belong to the LED technical field.

Background technology

LED (light-emitting diode) chip has the branch of AlGaInP light-emitting diode (quaternary LED) and GaN light-emitting diode (blue-ray LED) at present, the general structure of quaternary LED is followed successively by P electrode, Window layer, luminous zone, substrate and N electrode, electric current flows into from the P electrode, and the N electrode flows out, and causes luminous.AlGaInP light-emitting diode (quaternary LED) has the branch of gold electrode and aluminium electrode at present.For aluminium electrode processing procedure, generally on the Window layer of the epitaxial wafer that comprises Window layer, luminous zone and substrate, do a layer down payment alloy earlier, open figure, alloy at a certain temperature, make to form between metal and the epitaxial wafer to contact preferably, then grinding back surface to the certain thickness evaporation metal gold germanium as the N electrode.And then on positive down payment alloy, do thick aluminium, photoetching forms the P electrode.

Aluminum current electrode processing procedure has following shortcoming: the one, because the N electrode adopts metallic gold germanium, for make metallic gold germanium with epitaxial wafer between form and contact preferably, need on the substrate of epitaxial wafer, do laminated gold under the uniform temperature condition, thereby complex procedures, increase cost and man-hour virtually, the 2nd, because of epitaxial wafer needs to grind attenuate before evaporation metal gold germanium is as the N electrode, epitaxial wafer mechanical strength behind the grinding attenuate is relatively poor, and follow-up technology causes fragmentation easily, cause the loss in the production process, increased production cost.

Summary of the invention

The objective of the invention is in order to overcome existing above-mentioned complex procedures in the AlGaInP light-emitting diode aluminium electrode LED processing procedure, to increase cost and man-hour virtually, especially the shortcoming that mechanical strength is relatively poor behind the grinding back surface attenuate, subsequent action causes fragmentation easily, be provided to do and need not alloy before the N electrode and do ohmic contact, technology is simple relatively, can enhance productivity a kind of technique for preparing light emitting diode that reduces production costs

The objective of the invention is to be achieved through the following technical solutions, a kind of technique for preparing light emitting diode, its structure is followed successively by P electrode, Window layer, luminous zone, substrate and N electrode, manufacture craft is at first done a layer down payment alloy on the Window layer of the epitaxial wafer that comprises Window layer, luminous zone and substrate, it is characterized in that described manufacture craft also is included in the thick aluminium of plating on the down payment alloy successively, open the figure photoetching and form the P electrode, grind the substrate that attenuate has formed the epitaxial wafer behind the P electrode then, evaporation N type conductive materials forms the N electrode on substrate at last.

Described N type conductive materials is a tin indium oxide.

Described evaporation carries out in the ITO evaporator, and evaporation condition: P is 1A/S, and temperature 210-220 ℃, vacuum degree 10 * 10 ^-6, oxygen flow is 10sccm.

The present invention is for overcoming existing some shortcomings in the existing aluminium electrode LED processing procedure, do the N electrode of light-emitting diode with tin indium oxide N type conductive materials, need not alloy and just have better the contact with epitaxial wafer, so make and to open after the figure photoetching forms the P electrode finishing thick aluminium, again substrate is ground attenuate and do the N electrode, avoided originally doing the preceding problem that needs alloy and aluminium is hardened of N electrode, one aspect of the present invention can shorten the man-hour that quaternary LED makes, save cost, can reduce the fragmentation problem in the processing procedure on the other hand, be convenient to enterprise and produce, help improving product quality and production efficiency, reduce production costs and improve the business economic benefit.

Description of drawings

Fig. 1 does cross section structure enlarged diagram after the down payment for epitaxial wafer of the present invention;

Fig. 2 is the cross section structure enlarged diagram of the present invention after epitaxial wafer is finished P electrode etching;

Fig. 3 is a cross section structure enlarged diagram of finishing plating N electrode behind the chip thinning of P electrode;

Among the figure, 1 down payment alloy, 2 Window layer, 3 luminous zones, 4 substrates, 5 aluminum metal layers, 6 N electrodes.

Embodiment

Further specify the present invention in conjunction with the accompanying drawings and embodiments, as shown in Figure 3, the present invention is by down payment alloy 1, Window layer 2 (GaP), and luminous zone 3, substrate 4, aluminum metal layer 5, N electrode 6 constitutes.Manufacture craft is to do layer down payment 1 on the Window layer of the epitaxial wafer that comprises Window layer, luminous zone and substrate successively, the metal level 5 of on down payment 1, aluminizing, open the figure photoetching and form the P electrode, grind the substrate 4 that attenuate has formed the epitaxial wafer behind the P electrode then, evaporation N type conductive materials forms N electrode 6 on substrate 4 at last; N type conductive materials is a tin indium oxide; Evaporation carries out in evaporator, and evaporation condition: P is 1A/S, and temperature 210-220 ℃, vacuum degree 10 * 10, oxygen flow is 10sccm.

As shown in Figure 1, do layer down payment 1 (as AuBe/Au) on the epitaxial wafer earlier, alloy at a certain temperature, the down payment alloy is done ohmic contact, plates thick aluminium then, opens the figure photoetching, forms the P electrode.

As shown in Figure 2, epitaxial wafer is finished P electrode etching,

Claims

1, a kind of technique for preparing light emitting diode, its structure is followed successively by P electrode, Window layer, luminous zone, substrate and N electrode, manufacture craft is at first done a layer down payment alloy on the Window layer of the epitaxial wafer that comprises Window layer, luminous zone and substrate, it is characterized in that described manufacture craft also is included in the thick aluminium of plating on the down payment alloy successively, open the figure photoetching and form the P electrode, grind the substrate that attenuate has formed the epitaxial wafer behind the P electrode then, evaporation N type conductive materials forms the N electrode on substrate at last.

2, a kind of technique for preparing light emitting diode according to claim 1 is characterized in that described N type conductive materials is a tin indium oxide.

3, a kind of technique for preparing light emitting diode according to claim 1 is characterized in that described evaporation carries out in the ITO evaporator, evaporation condition: P is 1A/S, temperature 210-220 ℃, and vacuum degree 10 * 10 ^-6, oxygen flow is 10sccm.