CN102569584A - Method for manufacturing ohmic contact electrode with improved optical performance - Google Patents
Method for manufacturing ohmic contact electrode with improved optical performance Download PDFInfo
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- CN102569584A CN102569584A CN2012100015953A CN201210001595A CN102569584A CN 102569584 A CN102569584 A CN 102569584A CN 2012100015953 A CN2012100015953 A CN 2012100015953A CN 201210001595 A CN201210001595 A CN 201210001595A CN 102569584 A CN102569584 A CN 102569584A
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- ohmic contact
- contact electrode
- epitaxial wafer
- optical property
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Abstract
The invention discloses a manufacturing method for forming a dot-shaped ohmic contact layer on the surface of a semiconductor material (such as an epitaxial wafer) by using contact alloy, a high-light transmittance material ITO and a SiO2 material. The manufacturing method comprises the following steps: firstly, evaporating dot-shaped contact alloy AuBe on the surface of the semiconductor material (such as the epitaxial wafer); secondly, photoetching and etching; thirdly, thermally processing so as to oxidize transition metal; fourthly, evaporating ITO and SiO2 on the surface; and finally, finishing manufacturing of an ohmic contact electrode by a photoetching and etching technology. By the method, the light-emitting area of a semiconductor device can be increased and the external quantum efficiency can be improved.
Description
Technical field
The present invention relates to a kind of manufacturing approach of Ohm contact layer of semiconductor, particularly a kind of ohmic contact layer technical field that is applied in high brightness, high light-emitting efficiency light-emitting diode.
Background technology
In recent years, semi-conducting material has been widely used in optical diode, laser diode, photodetector and the microelectronic element.Light-emitting diode has successfully developed into the commercially produced product of high brightness, and good Ohmic contact in these elements (ohmic contact) is crucial.In the production process of semiconductor device; Different alloy material and the alloying technologys of the general employing of the ohmic contact in p type island region and N type district; Ohmic contact (ohmic contact) electrode size and chip electrode that the alloy of formation ohmic contact (ohmic contact) is made into through evaporation, photoetching, etch process are measure-alike; After applying operating current; The part light of luminescent layer is blocked and can't penetrate by electrode during by active area directive epi-layer surface, causes the light extraction efficiency of light-emitting diode low, external quantum efficiency is low, and brightness is low.
To so far; The electrode size of the ohmic contact layer of making in the prior art and chip electrode size all are generally big; A large amount of like this light is blocked in the metal electrode below and can not sends, and the optical property of the feasible device of making is obviously on the low side, and application surface is narrow; The market approval rate is low, the manufacturing cost that increases virtually.
Summary of the invention
The present invention is directed to the deficiency of prior art; Create out a kind of simple and effective manufacturing approach of improving the Ohm contact electrode of optical property, when it can realize forming the good ohmic contact, improve external quantum efficiency; Increase light-emitting area, improve the performance and the reliability of device.
Technical scheme of the present invention is:
A kind of manufacturing approach of improving the Ohm contact electrode of optical property at the gold-beryllium alloy of epitaxial wafer surface evaporation thin layer, forms point-like (dots) ohmic contact layer through photoetching, etch process in epi-layer surface.
The alloying temperature is between 450 ℃～500 ℃, and alloying time is 5～12 minutes.
Preferably, point-like (dots) ohmic contact layer (AuBe alloy) is of a size of 10 microns-20 microns.
Further, at epitaxial wafer surface deposition ITO and SiO2 thin layer.
Point-like (dots) ohmic contact layer is at first evaporated on the epitaxial wafer surface; Through photoetching, etch process figure is handled, Alloying Treatment is carried out in contact, and alloy temperature is: 450 ℃～500 ℃; Alloying time is: 5～12 minutes, evaporate, deposit ITO, SiO then
2Layer.
Preferably, be that
thin layer, SiO2 are
thin layer at epitaxial wafer surface deposition ITO.
For achieving the above object, the present invention takes following measure:
Earlier epitaxial wafer is cleaned up; Remove impurity such as surperficial particle, oxide, metal ion, subsequently at least two kinds of metallic elements of epitaxial wafer surface evaporation, through the processing of photoetching, etch process; Form point-like (dots) Ohm contact electrode; Then carry out Alloying Treatment, make wherein a kind of metallic element oxidation form P type oxide semiconductor, all the other metals then keep metallic state.
A kind of manufacturing approach of improving the Ohm contact electrode of optical property of the present invention, can adopt following implementation method to realize:
At first with epitaxial wafer normal temperature mixed liquor (ammonium hydroxide: hydrogen peroxide solution: soaked 3-4 minute water); The mixed liquor ratio can be ammonium hydroxide: hydrogen peroxide solution: water=2: 1: 5; Rinse well with deionized water then, soaked 30 seconds at 55 ℃ mixed liquor (sulfuric acid, hydrogen peroxide solution, water) subsequently, the mixed liquor ratio can be sulfuric acid: hydrogen peroxide solution: water=5: 1: 1; Rinse well with deionized water then, and it is positioned in the drier dries.The golden beryllium alloy layer that then in the electron beam evaporation platform, evaporates
; Produce point-like (dots) ohmic contact layer electrode through technologies such as photoetching, etchings then, then in alloying furnace, carry out the alloy operation.Alloy temperature: 450 ℃～500 ℃, this temperature section could be realized ohmic contact, is convenient to the enforcement of subsequent technique, and the alloy time: 5～12 minutes, this time period just can reach ohmic contact, was convenient to the enforcement of subsequent technique.If the time is long partially, will cause red shift of wavelength.Next be coated with continuation evaporation ITO layer and SiO on the epitaxial wafer of alloy-layer
2Layer forms ohmic contact (ohmic contact) electrode that improves optical property through photoetching, etch process, just can carry out next step process operation.ITO layer and SiO
2The thickness screening of layer cooperates, and is in order to guarantee higher light emission rate.
Provide through vapor deposition with golden beryllium (AuBe) alloy deposition on conductor device, be made into the ohmic contact layer of point-like (dots) through technologies such as photoetching, etchings,
The present invention compared with prior art has the following advantages:
1, light-emitting area is big.Gold beryllium ohmic contact layer electrode size is little, and is little to blocking of light-emitting area.A large amount of light beams can shine the epitaxial wafer surface from the luminous zone.
2, the luminous zone is even.ITO coating can play good current expansion effect, and the light from the active area emission is had good current expansion effect and high light transmission rate.
3, external quantum efficiency is high.SiO2 than ITO (NITO=2.08, refractive index NSiO2=1.45) is low, a large amount of light beams can be refracted to epi-layer surface well through SiO2, the drawback that the light extraction efficiency of avoiding total reflection phenomenon to bring is low.When ITO in the technical scheme of the present invention
evaporates for this reason thickness; The highest 99-100%SiO2 of its transmitance
: the thickness of deposition SiO2 is for this reason during thickness; Its refractive index is best, makes more light send from chip (chip) surface exactly.
4, production technology is simple and convenient.The same with the ordinary student production. art, just can realize through technologies such as evaporation, photoetching, etching, alloy treatment.
5, equipment is not had extra demand, and operation of equipment is simple and convenient.
Description of drawings
Fig. 1, epitaxial wafer sketch map;
Fig. 2, evaporation have the epitaxial wafer sketch map of golden beryllium alloy layer;
Point-like gold beryllium layer sketch map after Fig. 3, photoetching, the etching;
The sketch map of evaporation ITO layer and SiO2 layer on Fig. 4, the point-like gold beryllium layer;
Fig. 5, novel ohmic contact layer sketch map.
Embodiment
A kind of manufacturing approach of improving the Ohm contact electrode of optical property of the present invention, can adopt following implementation method to realize:
At first with epitaxial wafer (shown among Fig. 1 4) normal temperature mixed liquor (ammonium hydroxide: hydrogen peroxide solution: soaked 3-4 minute water); The mixed liquor ratio can be ammonium hydroxide: hydrogen peroxide solution: water=2: 1: 5; Rinse well with deionized water then, soaked 30 seconds at 55 ℃ mixed liquor (sulfuric acid, hydrogen peroxide solution, water) subsequently, the mixed liquor ratio can be sulfuric acid: hydrogen peroxide solution: water=5: 1: 1; Rinse well with deionized water then, and it is positioned in the drier dries.Then in the electron beam evaporation platform, evaporate
Golden beryllium alloy layer (shown among Fig. 2 1); Produce point-like (dots) ohmic contact layer electrode (shown among Fig. 3 1) through technologies such as photoetching, etchings then; Then in alloying furnace, carry out alloy (alloy temperature: 450 ℃～500 ℃; The alloy time: 5～12 minutes) next operation is being coated with continuation evaporation ITO layer and SiO on the epitaxial wafer of alloy-layer
2Layer (shown among Fig. 42 and 3) improves ohmic contact (ohmic contact) electrode (as shown in Figure 5) of optical property through photoetching, etch process formation, just can carry out next step process operation.
Claims (6)
1. a manufacturing approach of improving the Ohm contact electrode of optical property is characterized in that: at the AuBe alloy of epitaxial wafer surface evaporation thin layer, form point-like (dots) ohmic contact layer through photoetching, etch process in epi-layer surface.
2. the manufacturing approach of improving the Ohm contact electrode of optical property according to claim 1 is characterized in that: the alloying temperature is between 450 ℃～500 ℃, and alloying time is 5～12 minutes.
3. the manufacturing approach of improving the Ohm contact electrode of optical property according to claim 2 is characterized in that point-like (dots) ohmic contact layer (AuBe alloy) is of a size of 10 microns-20 microns.
4. the manufacturing approach of improving the Ohm contact electrode of optical property according to claim 3 is characterized in that: at epitaxial wafer surface deposition ITO and SiO2 thin layer.
5. according to claim 1,2, the 3 or 4 described manufacturing approaches of improving the Ohm contact electrode of optical property; It is characterized in that: point-like (dots) ohmic contact layer is at first evaporated on the epitaxial wafer surface; Through photoetching, etch process figure is handled, Alloying Treatment is carried out in contact, and alloy temperature is: 450 ℃～500 ℃; Alloying time is: 5～12 minutes, evaporate, deposit ITO, SiO then
2Layer.
6. the manufacturing approach of improving the Ohm contact electrode of optical property according to claim 4 is characterized in that: at epitaxial wafer surface deposition ITO is that
thin layer, SiO2 are
thin layer.
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| CN201110189148.0 | 2011-07-07 | ||
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206895A (en) * | 2016-08-24 | 2016-12-07 | 西安中为光电科技有限公司 | A kind of LED with double current spreading layer and preparation method thereof |
Citations (3)
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| WO2004112157A1 (en) * | 2003-06-03 | 2004-12-23 | Epivalley Co., Ltd. | Iii-nitride compound semiconductor light emitting device with mesh type electrode |
| CN101276865A (en) * | 2008-04-30 | 2008-10-01 | 扬州华夏集成光电有限公司 | Technique for preparing light emitting diode |
| CN101929610A (en) * | 2008-12-26 | 2010-12-29 | 深圳世纪晶源华芯有限公司 | Large-power forward LED chip structure |
-
2012
- 2012-01-05 CN CN2012100015953A patent/CN102569584A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004112157A1 (en) * | 2003-06-03 | 2004-12-23 | Epivalley Co., Ltd. | Iii-nitride compound semiconductor light emitting device with mesh type electrode |
| CN101276865A (en) * | 2008-04-30 | 2008-10-01 | 扬州华夏集成光电有限公司 | Technique for preparing light emitting diode |
| CN101929610A (en) * | 2008-12-26 | 2010-12-29 | 深圳世纪晶源华芯有限公司 | Large-power forward LED chip structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206895A (en) * | 2016-08-24 | 2016-12-07 | 西安中为光电科技有限公司 | A kind of LED with double current spreading layer and preparation method thereof |
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Application publication date: 20120711 |