CN202585518U - Ohmic contact electrode with improved optical performance - Google Patents
Ohmic contact electrode with improved optical performance Download PDFInfo
- Publication number
- CN202585518U CN202585518U CN 201220002238 CN201220002238U CN202585518U CN 202585518 U CN202585518 U CN 202585518U CN 201220002238 CN201220002238 CN 201220002238 CN 201220002238 U CN201220002238 U CN 201220002238U CN 202585518 U CN202585518 U CN 202585518U
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- electrode
- layer
- epitaxial wafer
- photoetching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Abstract
The utility model discloses an ohmic contact electrode with improved optical performances, which comprises an epitaxial wafer and a dot-shaped ohmic contact layer electrode. An Au-Be contact alloy layer in an electron-beam evaporation station is formed on the surface of the epitaxial wafer through the vapor deposition process and then is subjected to photoetching and etching treatments so as to form the dot-shaped ohmic contact layer electrode. ITO layer and SiO2 layer are formed on the ohmic contact layer electrode of the epitaxial wafer through the vapor deposition process and then are subjected to etching and thermal treatments successively so as to oxidize transition metal. After that, ITO and SiO2 on the surface are evaporated and then are subjected to photoetching and etching treatments so as to complete the manufacturing of the ohmic contact electrode. Due to the adoption of the ohmic contact electrode, the light-emitting area of a semiconductor device can be increased and the external quantum efficiency can be improved.
Description
Technical field
The utility model relates to a kind of Ohm contact electrode that improves optical property, particularly a kind of ohmic contact layer technical field that is applied in high brightness, high light-emitting efficiency light-emitting diode.
Background technology
In recent years, semi-conducting material has been widely used in optical diode, laser diode, photodetector and the microelectronic element.Light-emitting diode has successfully developed into the commercially produced product of high brightness, and good Ohmic contact in these elements (ohmic contact) is crucial.In the production process of semiconductor device; Different alloy material and the alloying technologys of the general employing of the ohmic contact in p type island region and N type district; Ohmic contact (ohmic contact) electrode size and chip electrode that the alloy of formation ohmic contact (ohmic contact) is made into through evaporation, photoetching, etch process are measure-alike; After applying operating current; The part light of luminescent layer is blocked and can't penetrate by electrode during by active area directive epi-layer surface, causes the light extraction efficiency of light-emitting diode low, external quantum efficiency is low, and brightness is low.
To so far; The electrode size of the ohmic contact layer of making in the prior art and chip electrode size all are generally big; A large amount of like this light is blocked in the metal electrode below and can not sends, and the optical property of the feasible device of making is obviously on the low side, and application surface is narrow; The market approval rate is low, the manufacturing cost that increases virtually.
The utility model content
The utility model provides a kind of Ohm contact electrode that improves optical property to the deficiency of prior art, when it can realize forming the good ohmic contact, improves external quantum efficiency, increases light-emitting area, improves the performance and the reliability of device.
For the technical scheme that addresses the above problem employing is:
Earlier epitaxial wafer is cleaned up; Remove impurity such as surperficial particle, oxide, metal ion, subsequently at least two kinds of metallic elements of epitaxial wafer surface evaporation, through the processing of photoetching, etch process; Form point-like (dot) Ohm contact electrode; Then carry out Alloying Treatment, make wherein a kind of metallic element oxidation form P type oxide semiconductor, all the other metals then keep metallic state.
A kind of Ohm contact electrode that improves optical property of the utility model, can adopt following implementation method to realize:
At first with epitaxial wafer normal temperature mixed liquor (ammonium hydroxide: hydrogen peroxide solution: soaked 3-4 minute water); The mixed liquor ratio can be ammonium hydroxide: hydrogen peroxide solution: water=2: 1: 5; Rinse well with deionized water then, soaked 30 seconds at 55 ℃ mixed liquor (sulfuric acid, hydrogen peroxide solution, water) subsequently, the mixed liquor ratio can be sulfuric acid: hydrogen peroxide solution: water=5: 1: 1; Rinse well with deionized water then, and it is positioned in the drier dries.Then in the electron beam evaporation platform, evaporate
Golden beryllium alloy layer; Produce point-like (dot) ohmic contact layer electrode through technologies such as photoetching, etchings then; Then in alloying furnace, carry out alloy (alloy temperature: 350 ℃～400 ℃; The alloy time: 5～10 minutes) next operation is being coated with continuation evaporation ITO layer and SiO on the epitaxial wafer of alloy-layer
2Layer forms ohmic contact (ohmic contact) electrode that improves optical property through photoetching, etch process, just can carry out next step process operation.
Provide through vapor deposition with golden beryllium (AuBe) alloy deposition on conductor device, be made into the ohmic contact layer of point-like (dot) through technologies such as photoetching, etchings,
The utility model compared with prior art has the following advantages:
1, light-emitting area is big.Gold beryllium ohmic contact layer electrode size is little, and is little to blocking of light-emitting area.A large amount of light beams can shine the epitaxial wafer surface from the luminous zone.
2, the luminous zone is even.ITO coating can play good current expansion effect, and the light from the active area emission is had good current expansion effect and high light transmission rate.
3, external quantum efficiency is high.SiO
2Than ITO (N
ITO=2.08, N
SiO2=1.45) refractive index is low, and a large amount of light beams pass through SiO
2Epi-layer surface can be refracted to well, the drawback that the light extraction efficiency of avoiding total reflection phenomenon to bring is low.
4, production technology is simple and convenient.The same with the ordinary student production. art, just can realize through technologies such as evaporation, photoetching, etching, alloy treatment.
5, equipment is not had extra demand, and operation of equipment is simple and convenient.
Description of drawings
Fig. 1 is a kind of ohmic contact electrode structure sketch map that improves optical property.
Embodiment
As shown in Figure 1; A kind of Ohm contact electrode that improves optical property of the utility model; Comprise epitaxial wafer 4; With produce point-like (dot) ohmic contact layer electrode 1, hydatogenesis ITO layer 2 and SiO on the epitaxial wafer 4 nurse contact layer electrodes 1 through the golden beryllium alloy layer on epitaxial wafer 4 of hydatogenesis in the electron beam evaporation platform through technologies such as photoetching, etchings
2Layer 3.
Claims (1)
1. Ohm contact electrode that improves optical property; It is characterized in that: comprise epitaxial wafer; With produce point-like ohmic contact layer electrode, hydatogenesis ITO layer and SiO on the epitaxial wafer nurse contact layer electrode through the golden beryllium alloy layer on epitaxial wafer of hydatogenesis in the electron beam evaporation platform through photoetching, etch process
2Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220002238 CN202585518U (en) | 2012-01-05 | 2012-01-05 | Ohmic contact electrode with improved optical performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220002238 CN202585518U (en) | 2012-01-05 | 2012-01-05 | Ohmic contact electrode with improved optical performance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202585518U true CN202585518U (en) | 2012-12-05 |
Family
ID=47254898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220002238 Expired - Lifetime CN202585518U (en) | 2012-01-05 | 2012-01-05 | Ohmic contact electrode with improved optical performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202585518U (en) |
-
2012
- 2012-01-05 CN CN 201220002238 patent/CN202585518U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING SHIDAIHAODING TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: YANG JIYUAN Effective date: 20141009 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100081 HAIDIAN, BEIJING TO: 100085 HAIDIAN, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20141009 Address after: 100085, room 1, building 1, 2503 information road, Beijing, Haidian District Patentee after: BEIJING TIMES HAODING TECHNOLOGY CO., LTD. Address before: 100081 No. 3, Nanping house, 46 South Street, Haidian District, Beijing, Zhongguancun Patentee before: Yang Jiyuan |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100095, 2, 1, unit 201-1, 10 building, No. 1, Gao Li Zhang Road, Haidian District, Beijing. Patentee after: Polytron Technologies Inc Address before: Room 2503, Building 1, Courtyard 1, Information Road, Haidian District, Beijing 100085 Patentee before: BEIJING TIMES HAODING TECHNOLOGY CO., LTD. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121205 |