CN104409597A - Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process - Google Patents
Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process Download PDFInfo
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- CN104409597A CN104409597A CN201410644761.0A CN201410644761A CN104409597A CN 104409597 A CN104409597 A CN 104409597A CN 201410644761 A CN201410644761 A CN 201410644761A CN 104409597 A CN104409597 A CN 104409597A
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- electrode
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- red led
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses an electrode manufacturing method in a red LED (Light Emitting Diode) chip manufacturing process. The electrode manufacturing method disclosed by the invention comprises the following steps of: putting an LED chip, the P surface and the N surface of which are evaporated, in a yellow light room, and coating protective glue on the P surface; setting a mask plate on the protective glue layer, and then, illuminating to form a protective layer; developing, fixing, etching a metal layer on the P surface to form a contact electrode of the P surface, removing glue, and cleaning; sequentially evaporating a titanium layer and an aluminium layer on the contact electrode of the P surface to form a wire-welding electrode of the P surface; coating the protective glue on the wire-welding electrode of the P surface; and, after developing and fixing, etching the wire-welding electrode of the P surface coated with the protective glue, removing the glue and cleaning. By means of the electrode manufacturing method disclosed by the invention, the etching precision is increased; and the quality of the P-surface electrode is ensured.
Description
Technical field
The invention belongs to LED chip production field, be specifically related to the method for making its electrode in a kind of red LED chips making technology.
Background technology
Any semiconductor device finally all will be connected with external circuit by contact conductor, and the performance of character to whole device at metal-semiconductor interface has a significant impact, no exception for GaN base light-emitting diode.Electric current one voltage drop of metal-semiconductor interface contact portions is linear, is equivalent to the resistance (also referred to as ohmic contact resistance) that a resistance is very little.
Because interface does not have potential barrier, if it is too large that the voltage drop of contact portion can neglect crossing ohmic contact resistance compared with the voltage drop of device inside, so by making that the forward operating voltage Vf of LED component increases, injection efficiency reduces, and device heating, brightness decline, the lost of life.So the quality of the pn junction electrode of LED chip directly affects the quality of LED component.
The manufacture craft of pn junction electrode generally adopts the methods such as photoetching, vacuum electronic beam evaporation, wet etching and stripping.The current p-type contact electricity root generally adopted is nickel/copper (Ni/Au), and electrode can be made to have good light transmission and electric property.In the manufacture craft of LED chip, in order to reduce as far as possible electrode ask influence each other, need to carry out alloy to n-type electrode.Right face also can have an impact to p-type contact electricity olive in the alloy process of n-type electrode, remains unchanged sufficient very important so electricity skims the performance that p-type contact electricity can be made to rouse when Shu Xin carries out alloy in ammonia.
The L-V characteristic of LED and I-V(electric current one voltage of the different of I-P characteristic electrode position to LED) characteristic also can have an impact.P-type bonding wire electrode is high away from the optical output power of chip under 20 mA electric currents of n-type electrode, and its forward voltage drop is larger.Under big current, p-type bonding wire electrode is easy to saturated away from the chip of n-type electrode, if at this moment chip size is comparatively large, its high-rate performance is much better.Therefore, when selecting chip to be packaged into LED, the position at chip the two poles of the earth be noted.Should accomplish, with in a collection of chip, to avoid different electrode structures as far as possible, then prevent from occurring different I-P characteristics during work, the hank performance of LED of result is inconsistent.
Relative to the working effect of V-type contact electrode in big current situation, the I-P characteristic of the chip of L-type contact electrode is better, and heat conduction is also very good.This chip only needs when encapsulating to weld single line, and therefore its antistatic effect is good, light output efficiency is high.
Application number is 201410233155.X, and the applying date is within 014 year 05 month 28 days, disclose a kind of LED chip p side electrode, prepare p side electrode etching liquid and p side electrode preparation method, belongs to LED electrical pole preparing technical field.The etching liquid of this invention comprises titanium etching liquid, aluminium etching liquid and golden etching liquid, composition is simple, reasonable mixture ratio, avoid the wet etching electrode pattern problem on deformation that the increase of electrode metal layer thickness causes, the preparation method of this invention p side electrode, the bonding wire electrode that photoetching and wet etching treatment increase to obtain thickness appropriateness is carried out successively to LED chip p side electrode, technique is simple, reproducible.This invention well solves rosin joint, disengaging problem between bonding wire electrode and packaging conductive wire.
Above-mentioned patent is in the process of preparation, and directly etch after being coated with protecting glue, the precision of etching is very low, causes and produces the large problem of waste material probability.
Summary of the invention
Technical problem to be solved by this invention is: provide the method for making its electrode in a kind of red LED chips making technology, solves the problem that precision prepared by electrode in prior art is low.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
A method for making its electrode in red LED chips making technology, comprises the steps:
Step 1, the LED chip in complete for evaporation P face, N face is placed in gold-tinted indoor, is coated with protecting glue in P face;
Step 2, protection glue-line on mask plate is set, then carry out illumination, formed protective layer;
Step 3, the metal level in P face to be etched, form the contact electrode in P face, and carry out cleaning of removing photoresist;
Step 4, on the contact electrode in P face evaporation titanium layer, aluminium lamination successively, form the bonding wire electrode in P face;
Step 5, protecting glue is coated with to the bonding wire electrode in P face;
Step 6, the bonding wire electrode being coated with the P face after protecting glue to be etched, and carry out cleaning of removing photoresist;
Include between described step 2 and step 3 and between step 5 and step 6 develop, fixing.
Described protecting glue is positive photoresist.
Described mask plate evenly arranges some manholes.
Etching in described step 3 comprises photoetching and wet etching, first carries out photoetching, then carry out wet etching to the metal level in P face, forms the contact electrode in P face.
Etching in described step 6 comprises photoetching and wet etching, first carries out photoetching, then carry out wet etching to the bonding wire electrode in the P face after painting protecting glue.
Described titanium layer thickness is 130 ~ 170nm, and aluminum layer thickness is 1400 ~ 1900nm.
Described titanium layer thickness is 150nm, and aluminum layer thickness is 1500nm.
Compared with prior art, the present invention has following beneficial effect:
1, painting protecting glue, set up mask after carry out developing, fixing process, improve the precision of etching, ensure that the quality of p side electrode.
2, electrode deformation in etching process is avoided, or the problem of etching skew, the electrode percent defective that application the method makes is low, improves operating efficiency, reduces cost.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of red LED chips p side electrode of the present invention.
Wherein, being designated in figure: 1-P face; 2-N face; 3-contact electrode; 4-titanium layer; 5-aluminium lamination.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention and the course of work are described further.
Those skilled in the art of the present technique are understandable that, unless otherwise defined, all terms used herein (comprising technical term and scientific terminology) have the meaning identical with the general understanding of the those of ordinary skill in field belonging to the present invention.Should also be understood that those terms defined in such as general dictionary should be understood to have the meaning consistent with the meaning in the context of prior art, unless and define as here, can not explain by idealized or too formal implication.
As shown in Figure 1, for the Making programme of red LED chips p side electrode, the method is described,
A method for making its electrode in red LED chips making technology, comprises the steps:
Step 1, the LED chip in complete for evaporation P face 1, N face 2 is placed in gold-tinted indoor, is coated with protecting glue in P face 1;
Step 2, protection glue-line on mask plate is set, then carry out illumination, formed protective layer;
Step 3, the metal level in P face 1 to be etched, form the contact electrode 3 in P face 1, and carry out cleaning of removing photoresist;
Step 4, on the contact electrode in P face 1 evaporation titanium layer 4, aluminium lamination 5 successively, form the bonding wire electrode in P face;
Step 5, protecting glue is coated with to the bonding wire electrode in P face 1;
Step 6, the bonding wire electrode being coated with the P face 1 after protecting glue to be etched, and carry out cleaning of removing photoresist;
Include between described step 2 and step 3 and between step 5 and step 6 develop, fixing.
Painting protecting glue, set up mask after carry out developing, fixing process, improve the precision of etching, ensure that the quality of p side electrode.
Described protecting glue is positive photoresist.
Described mask plate evenly arranges some manholes.
Etching in described step 3 comprises photoetching and wet etching, first carries out photoetching, then carry out wet etching to the metal level in P face, forms the contact electrode in P face.
Etching in described step 6 comprises photoetching and wet etching, first carries out photoetching, then carry out wet etching to the bonding wire electrode in the P face after painting protecting glue.
Avoid electrode deformation in etching process, or the problem of etching skew, the electrode percent defective that application the method makes is low, improves operating efficiency, reduces cost.
Described titanium layer thickness is 130 ~ 170nm, and aluminum layer thickness is 1400 ~ 1900nm.
Described titanium layer thickness is 150nm, and aluminum layer thickness is 1500nm.
Titanium layer thickness and aluminum layer thickness very large on the impact of electrode quality, therefore, suitable titanium layer and aluminum layer thickness is selected to be that making LED chip electrode is vital, this method selects titanium layer thickness to be 130 ~ 170nm, aluminum layer thickness is 1400 ~ 1900nm, makes finished electrode have good ohm bonding parameter.
Those skilled in the art of the present technique are understandable that, the step in the various operations discussed in the present invention, method, flow process, measure, scheme can be replaced, change, combine or delete.Further, there is various operations, method, other steps in flow process, measure, the scheme discussed in the present invention also can be replaced, change, reset, decompose, combine or delete.Further, of the prior art have also can be replaced with the step in operation various disclosed in the present invention, method, flow process, measure, scheme, changed, reset, decomposed, combined or deleted.
The above is only some embodiments of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. the method for making its electrode in red LED chips making technology, comprises the steps:
Step 1, the LED chip in complete for evaporation P face, N face is placed in gold-tinted indoor, is coated with protecting glue in P face;
Step 2, protection glue-line on mask plate is set, then carry out illumination, formed protective layer;
Step 3, the metal level in P face to be etched, form the contact electrode in P face, and carry out cleaning of removing photoresist;
Step 4, on the contact electrode in P face evaporation titanium layer, aluminium lamination successively, form the bonding wire electrode in P face;
Step 5, protecting glue is coated with to the bonding wire electrode in P face;
Step 6, the bonding wire electrode being coated with the P face after protecting glue to be etched, and carry out cleaning of removing photoresist;
It is characterized in that: include between described step 2 and step 3 and between step 5 and step 6 develop, fixing.
2. the method for making its electrode in red LED chips making technology according to claim 1, is characterized in that: described protecting glue is positive photoresist.
3. the method for making its electrode in red LED chips making technology according to claim 1, is characterized in that: described mask plate evenly arranges some manholes.
4. the method for making its electrode in red LED chips making technology according to claim 1, it is characterized in that: the etching in described step 3 comprises photoetching and wet etching, first photoetching is carried out to the metal level in P face, then carries out wet etching, form the contact electrode in P face.
5. the method for making its electrode in red LED chips making technology according to claim 1; it is characterized in that: the etching in described step 6 comprises photoetching and wet etching; first photoetching is carried out to the bonding wire electrode in the P face after painting protecting glue, then carries out wet etching.
6. the method for making its electrode in red LED chips making technology according to claim 1, is characterized in that: described titanium layer thickness is 130 ~ 170nm, and aluminum layer thickness is 1400 ~ 1900nm.
7. the method for making its electrode in red LED chips making technology according to claim 6, is characterized in that: described titanium layer thickness is 150nm, and aluminum layer thickness is 1500nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410644761.0A CN104409597A (en) | 2014-11-14 | 2014-11-14 | Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process |
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| CN201410644761.0A CN104409597A (en) | 2014-11-14 | 2014-11-14 | Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process |
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| CN104409597A true CN104409597A (en) | 2015-03-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110859026A (en) * | 2018-08-24 | 2020-03-03 | 绵阳市奇帆科技有限公司 | Manufacturing method for manufacturing LED circuit board electrode by printing process |
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|---|---|---|---|---|
| CN1039681A (en) * | 1988-07-15 | 1990-02-14 | 厦门大学 | Technology for preparing electrode of gallium phosphide led |
| CN1945860A (en) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | Method for preparing LED electrode |
| CN1979768A (en) * | 2005-12-08 | 2007-06-13 | 中国科学院微电子研究所 | Method for adopting positive electronic corrosion-resistant to prepare metal nano electrode |
| CN102064249A (en) * | 2010-12-09 | 2011-05-18 | 江西联创光电科技股份有限公司 | Manufacturing method of novel gallium nitride LED (light emitting diode) chip electrode structure |
| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN103985806A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P electrode of LED chip, etchant for manufacturing P electrode and P electrode manufacturing method |
| CN103985805A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method |
-
2014
- 2014-11-14 CN CN201410644761.0A patent/CN104409597A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039681A (en) * | 1988-07-15 | 1990-02-14 | 厦门大学 | Technology for preparing electrode of gallium phosphide led |
| CN1945860A (en) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | Method for preparing LED electrode |
| CN1979768A (en) * | 2005-12-08 | 2007-06-13 | 中国科学院微电子研究所 | Method for adopting positive electronic corrosion-resistant to prepare metal nano electrode |
| CN102064249A (en) * | 2010-12-09 | 2011-05-18 | 江西联创光电科技股份有限公司 | Manufacturing method of novel gallium nitride LED (light emitting diode) chip electrode structure |
| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN103985806A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P electrode of LED chip, etchant for manufacturing P electrode and P electrode manufacturing method |
| CN103985805A (en) * | 2014-05-28 | 2014-08-13 | 马鞍山太时芯光科技有限公司 | P thick aluminum electrode of LED chip, etchant for manufacturing thick aluminum electrode and thick aluminum electrode manufacturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110859026A (en) * | 2018-08-24 | 2020-03-03 | 绵阳市奇帆科技有限公司 | Manufacturing method for manufacturing LED circuit board electrode by printing process |
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Application publication date: 20150311 |
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