CN105679925A - Production method for directly welded wafer displayed in red light emitting diode (LED) and wafer - Google Patents
Production method for directly welded wafer displayed in red light emitting diode (LED) and wafer Download PDFInfo
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- CN105679925A CN105679925A CN201410678056.2A CN201410678056A CN105679925A CN 105679925 A CN105679925 A CN 105679925A CN 201410678056 A CN201410678056 A CN 201410678056A CN 105679925 A CN105679925 A CN 105679925A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000001259 photo etching Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000004380 ashing Methods 0.000 claims abstract description 5
- 238000000407 epitaxy Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 16
- 230000005496 eutectics Effects 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 abstract 9
- 238000001883 metal evaporation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
The invention relates to a production method for a directly welded wafer displayed in a red light emitting diode (LED) and the wafer. The production method comprises the following steps of carrying out first patterning processing on the front surface and the back surface of a substrate; sequentially carrying out growth of an N-type epitaxial layer and a P-type epitaxial layer; carrying out photoetching and etching on an N region, and exposing the N-type epitaxial layer out of a first patterning region; depositing a current baffle layer; carrying out photoetching and patterning etching on the current baffle layer; depositing a current diffusion layer; carrying out photoetching on the current diffusion layer and patterning etching on the current diffusion layer, exposing the P-type epitaxial layer out of a second patterning region, and exposing the N-type epitaxial layer out of a third patterning region; carrying out photoetching and patterning etching on a metal layer after pre-annealing; carrying out metal evaporation after ashing; forming two electrodes on the second patterning region and the third patterning region after stripping; carrying out laser stripping on the substrate, and depositing a passivation layer on the surface of the N-type epitaxial layer which is exposed after stripping; and obtaining the directly welded chip displayed in the red LED after annealing.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to preparation method and wafer that a kind of display red LED directly welds wafer.
Background technology
Traditional semiconductor light emitting wafer, epitaxial wafer is first generated by MOCVD, then after, operation does electrode, giving downstream application by cutting classification again, the circuit carrier (PCB) being first " encapsulation " (PACKAGE) before downstream application and then being fixed on application product gets on to realize the electric connection be correlated with and function.
After wafer in the electrode fabrication of operation, mainly produce into when downstream uses by can with the electrode of ultrasonic welding gold thread or aluminum steel.
First to be done " encapsulation " before downstream application, mainly on rational support (FRAME), carry out die bond with conductive elargol, one of them electrode safe is installed and realizes being electrically connected, and then by ultrasonic wire welding machine another electrode gold thread of wafer or aluminum steel welded and be connected to another independent electrically pin of support, finally with transparent epoxy resin, wafer, a part for support and their gold thread of connection or aluminum steel one are reinstated the mould grain cast doing optical lens design in advance again to seal. There is the pin of the electrical support of part to expose, it is is connected or the application on the PCB of application product of DIP plug-in unit installation as being SMT when supporting the use with other electron devices.
Doing in " encapsulation " this procedure, due to must bonding wire, certainty leave opaque gold in light-emitting area or aluminum steel melting welding point has covered the injection of light partly direction, and " black " heart point of withered sky can be left in the hot spot of independent pointolite, instead of the uniform hot spot of desirable pointolite.
In addition, under the requirement of market environment that semiconductor light emitting application tends to cost performance day by day, the service cost of semiconductor light emitting wafer is proposed huge reduction requirement.
Summary of the invention
It is an object of the invention to provide a kind of low cost, preparation method and wafer that the red LED of high light-emitting rate directly welds wafer, its preparation method is simple, can prepare top is exiting surface, bottom is positive and negative electrode, it is possible to be directly welded on PCB or laminated circuit board for showing the LED wafer of use.
First aspect, embodiments provides the preparation method that a kind of display red LED directly welds wafer, and described method comprises:
The front and back of substrate is all carried out the first graphical treatment; Described substrate comprises Sapphire Substrate, GaAs substrate or SiC substrate;
Described substrate after the first image conversion processes carries out N-type epitaxy layer and P type outer layer growth successively, and carries out chemically machinery polished;
Carry out the photoetching of N district and etching, in the first patterned area, expose N-type epitaxy layer;
Deposit current blocking layer;
Carry out current blocking layer photoetching and graphical etching;
Deposit current-diffusion layer;
Carry out current spread layer photoetching and graphical etching, in second graphical region, expose P type epitaxial film, and expose N-type epitaxy layer in the 3rd patterned area;
After pre-annealing, carry out metal level photoetching and graphical etching;
After ashing, carrying out metal steam plating, deposition Cr, Ni, Au, Ti, Sn, wherein outermost layer is AuSn alloy;
Metal level is peeled off; After stripping, described second graphical region and the 3rd patterned area form two electrodes of described wafer;
Use laser that substrate is carried out substrate laser lift-off, the N-type epitaxy layer surface exposed after stripping is carried out passivation layer deposit;
Obtain described display red LED after annealing and directly weld wafer.
Preferably, described method also comprises: after annealing, described red LED is directly welded wafer and carries out weldability simulation test.
Preferably, after substrate is carried out substrate laser lift-off by described use laser, described method also comprises:
Mill in the surface of the N-type epitaxy layer stayed after cutting is peeled off substrate;
And the red LED after cutting is directly welded wafer and carries out secondary passivity.
Preferably, described N-type epitaxy layer is specially N-type GaN or InGaN or InGaAlP.
Preferably, described P type epitaxial film is specially P type GaN or InGaN or InGaAlP.
Second aspect, embodiments provides and a kind of apply the red LED that method described in above-mentioned first aspect prepares and directly weld wafer.
The preparation method of wafer is directly welded in display red LED provided by the invention, simple and easy to do, it is possible to prepare the red LED for showing and directly weld wafer. Wafer have employed eutectic electrode, such that it is able to directly doing eutectic weldprocedure on the PCB of application product completes the electric connection with other electronic devices and components, saves traditional encapsulation process operation thus effectively saves apparatus processing cost and cost of labor.
Accompanying drawing explanation
Preparation method's schema that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 prepares one of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 3 prepares the two of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 4 prepares the three of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 5 prepares the four of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 6 prepares the five of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 7 prepares the six of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 8 prepares the seven of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
Fig. 9 prepares the eight of schematic diagram for what red LED that the embodiment of the present invention provides directly welded wafer;
The red LED that Figure 10 provides for the embodiment of the present invention directly welds wafer.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
The display red LED of the present invention directly welds (DirectAttach, DA) preparation method of wafer and LED wafer are mainly used in display aspect, mainly comprise LED display, super Small Distance LED display, super-high density LED display, the just luminous TV of LED, the just luminous watch-dog of LED, LED video wall, LED indicates, the special illumination of LED etc.
Preparation method's schema that Fig. 1 provides for the embodiment of the present invention, the preparation process schematic diagram that Fig. 2-Fig. 8 provides for the embodiment of the present invention, below with Fig. 1 and composition graphs 2-Fig. 8 the preparation method of the present invention is described.
Step 101, all carries out the first graphical treatment to the front and back of substrate;
First, adopt graphic sapphire substrate (PatternSapphireSubstrate, PSS) technique that substrate is carried out graphical treatment. Preferably, the front and back of substrate is all carried out graphical treatment by described graphical treatment. Described substrate comprises Sapphire Substrate, GaAs substrate or SiC substrate.
After PSS processes, the graphical front and back of substrate cuts wafer laser cutter after completing in order to rear operation can align, and can not hurt wafer body.
Step 102, the described substrate after the first image conversion processes carries out N-type epitaxy layer and P type outer layer growth successively, and carries out chemically machinery polished;
Concrete, the growth of epitaxial film is carried out on surface, the side of substrate. Epitaxy can adopt the mode of metal organic chemical vapor deposition (Metal-OrganicChemicalVaporDeposition, MOCVD) to carry out. Wherein, MOCVD is the starting material using the hydride of the organic compound of III race, II race's element and V, VI race's element etc. as crystal growth, on substrate, carry out vapour phase epitaxy in pyrolysis mode, grow the thin layer monocrystal material of various III-V race, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution. Such as, MOCVD is passed through, it is possible to the front deposit in patterned substrate forms PN knot, namely forms adjacent P-type layer and N-type layer. Depend on the starting material adopted, epitaxial film can be formed as gan (GaN) or InGaN or InGaAlP, wherein P-type layer can be any one in P-GaN or InGaN or InGaAlP, and N-type layer is any one in N-GaN or InGaN or InGaAlP. Sectional view after epitaxy is as shown in Figure 2.
Step 103, carries out the photoetching of N district and etching, exposes N-type epitaxy layer in the first patterned area;
Concrete, first, the mask plate utilizing photoresist material (OpticalResist, PR) and having a predetermined pattern carries out photoetching to epi-layer surface, thus the photoresist material making epi-layer surface forms this predetermined pattern. This predetermined pattern is the array of multiple repeat patterns, and each the pattern hollow out place in array needs the position exposing N-type epitaxy layer.
Next, carrying out etch processes, the place of non-lithography glue is etched into exposes N-type epitaxy layer, specifically as shown in Figure 3.
Step 104, deposit current blocking layer;
Concrete, the deposition of current blocking layer (CurrentBlockingLayer, CBL) generally adopts deposit silicon-dioxide (SiO2) as the spacer medium layer of electric current. Like this, it is possible to allow can not the bright dipping/part that is in the light (PN knot) not luminous, it is to increase electric current effectively injects.
Step 105, carries out current blocking layer photoetching and graphical etching;
Concrete, after CBL deposits, carry out CBL photoetching and etching, by the SiO in the place that do not have photoresist material to protect2Etch away, N-type region territory, exposed portion.
Step 106, deposit current-diffusion layer;
Concrete, the deposition of current-diffusion layer is generally deposit nano indium tin oxide (IndiumTinOxides, ITO). After deposit as shown in Figure 4.
Step 107, carries out current spread layer photoetching and graphical etching, exposes P type epitaxial film, and expose N-type epitaxy layer in the 3rd patterned area in second graphical region;
Concrete, it would be desirable to the region retaining ITO protects with photoresist, by ITO and SiO in the place that do not have photoresist material to protect2Etch away, expose P type epitaxial film and N-type epitaxy layer respectively, as shown in Figure 5.
Step 108, after pre-annealing, carries out metal level photoetching and graphical etching;
Concrete, by annealing in advance, wafer is carried out a high-temperature heat treatment, it is possible to reduce forward voltage, formed in current-diffusion layer surface contact.
After metal level photoetching and graphically etching, form the figure of the reserved eutectic electrode of metal refining. As shown in Figure 6.
Step 109, after ashing, carries out metal steam plating, deposition Cr, Ni, Au, Ti, Sn, and wherein outermost layer is AuSn alloy;
Concrete, ashing (Asher) technique adopts the removing of photoresist by plasma, utilizes oxygen, nitrogen clean wafer surface so that wafer surface is more smooth, and the negative glue that can remove electrode place improves electrode sticking.
Step 110, peels off metal level; After stripping, described second graphical region and the 3rd patterned area form two electrodes of described wafer;
Concrete, metal level is peeled off, the metal-stripping beyond electrode is fallen, described second graphical region and the 3rd patterned area form two electrodes (in figure PAD) of described wafer, as shown in Figure 7.
Step 111, it may also be useful to substrate is carried out substrate laser lift-off by laser, carries out passivation layer deposit to the N-type epitaxy layer surface exposed after stripping;
Concrete, utilize laser that described red LED is directly welded wafer and carry out substrate laser lift-off (LaserLiftOff, LLO), as shown in Figure 8, described substrate is cut to residue 0-3 μm. The object done like this is in order to red LED wafer can be good at by end face bright dipping, and is not blocked by substrate. Subsequently, the substrate surface after cutting being carried out chemically machinery polished, and the red LED after cutting is directly welded wafer and carries out secondary passivity, the sidewall in LED wafer forms passivation protection layer. Passivation layer deposit can as shown in Figure 9, deposit passivation protection layer around electrode.
Step 112, obtains described display red LED and directly welds wafer after annealing.
After anneal, it is possible to red LED is directly welded wafer and carries out weldability simulation test (WeldabilitySimulationTest, WST), to test the adhesivity of electrode in welding. .
Finally, through automated visual inspection, classification, just can shipment after packaging. The LED finally prepared directly welds wafer can be as shown in Figure 10.
The preparation method of wafer is directly welded in display red LED provided by the invention, simple and easy to do, it is possible to prepare the red LED for showing and directly weld wafer. Wafer have employed eutectic electrode, such that it is able to directly doing eutectic weldprocedure on the PCB of application product completes the electric connection with other electronic devices and components, saves traditional encapsulation process operation thus effectively saves apparatus processing cost and cost of labor.
Based on direct welding (DA) wafer that above-mentioned preparation method obtains, other substrates adopting the material such as aluminium indium gallium phosphorus phosphorus four element (AlInGaP) of high-luminous-efficiency and GaAs substrate, silicon carbide (SiC) substrate or Sapphire Substrate (Al2O3) or being not limited only to this are made, for the reverse mould inverted structure of high brightness top bright dipping, there is low driving voltage, the characteristics such as specular removal.The pad that direct and carrier board circuit mounts or is welded, or directly ITO technique makes driving circuit, completes flat pannel display and makes.
Its typical scantlings of the structure can be as follows:
Describe | Size | Deviation |
P-N junction area (μm) | 196X266~80X100 | ± 35~14 |
Wafer bottom surface area (μm) | 240X320~100X120 | ± 35~14 |
Wafer top surface area (μm) | 108X188~45X71 | ± 35~14 |
Wafer thickness (μm) | 140~60 | ±15 |
Positive pole AuSn or copper pad width (μm) | 80~30 | ±15 |
Positive pole AuSn or copper pad length (μm) | 196~98 | ± 35~14 |
Negative pole AuSn or copper pad width (μm) | 120~45 | ± 35~14 |
Negative pole AuSn or copper pad length (μm) | 196~98 | ± 35~14 |
Become attached between pad apart from (μm) | 100~38 | ±15 |
The thickness (μm) of AuSn or copper on pad | 3 | ±0.5 |
Table 1
In conjunction with such as following table 2 to table 4, it is possible to learn the main object properties of the LED wafer of the present invention.
Main Physical Characteristics | Parameter |
Wavelength (nm) | 500-770 |
Power (mw) | ≤80 |
Table 2
Electrical specification Ta=25 DEG C | Parameter |
Wavelength (nm) | 450-470 |
Power (mw) | ≤80 |
Forward voltage (V) | 1.85~3.6 |
Forward current (mA) | Unrestrictedly |
Peak forward electric current (mA) | 10-30 |
Reverse voltage (V) | 5 |
Reversible circulation (μ A) | It is less than 2 |
Half band-width (nm) | 20 |
Working temperature (DEG C) | -40-+100 |
Storage-temp (DEG C) | -40-+100 |
Electrostatic load threshold value (HBM) (V) | 1000 |
Electrostatic load rank (MIL-STD-883E) | 2 |
Table 3
The red LED that the embodiment of the present invention provides directly welds wafer, has low driving voltage, the characteristics such as specular removal, it may be possible to provide evenly bright dipping. Adopt eutectic electrode directly can do eutectic weldprocedure on the PCB of application product simultaneously and complete the electric connection with other electronic devices and components, save traditional encapsulation process operation thus effectively save apparatus processing cost and cost of labor.
In addition, LED eutectic wafer provided by the invention breaches semiconductor light emitting wafer in the application of Small Distance (PITCH) less than 1.0 millimeters and limits, because the restriction of the additional volumes that semiconductor light emitting body brings because of post-treatment (conventional package) can not be limited to again, it is possible to make the eutectic device of any size. Thus can realize the application of more wide semiconductor light emitting.
It should be noted that, although the preparation process that the present invention directly welds wafer for red LED is illustrated, but the present invention is not limited to preparation red LED eutectic wafer, it is possible to adopt present method to prepare the LED eutectic wafer of other colors.
Above-described embodiment; the object of the present invention, technical scheme and useful effect have been further described; it is it should be understood that; the foregoing is only the specific embodiment of the present invention; the protection domain being not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a display red LED directly welds the preparation method of wafer, it is characterised in that, described method comprises:
The front and back of substrate is all carried out the first graphical treatment; Described substrate comprises Sapphire Substrate, GaAs substrate or SiC substrate;
Described substrate after the first image conversion processes carries out N-type epitaxy layer and P type outer layer growth successively, and carries out chemically machinery polished;
Carry out the photoetching of N district and etching, in the first patterned area, expose N-type epitaxy layer;
Deposit current blocking layer;
Carry out current blocking layer photoetching and graphical etching;
Deposit current-diffusion layer;
Carry out current spread layer photoetching and graphical etching, in second graphical region, expose P type epitaxial film, and expose N-type epitaxy layer in the 3rd patterned area;
After pre-annealing, carry out metal level photoetching and graphical etching;
After ashing, carrying out metal steam plating, deposition Cr, Ni, Au, Ti, Sn, wherein outermost layer is AuSn alloy;
Metal level is peeled off; After stripping, described second graphical region and the 3rd patterned area form two electrodes of described wafer;
Use laser that substrate is carried out substrate laser lift-off, the N-type epitaxy layer surface exposed after stripping is carried out passivation layer deposit;
Obtain described display red LED after annealing and directly weld wafer.
2. method according to claim 1, it is characterised in that, described method also comprises: after annealing, described red LED is directly welded wafer and carries out weldability simulation test.
3. method according to claim 1, it is characterised in that, after substrate is carried out substrate laser lift-off by described use laser, described method also comprises:
Mill in the surface of the N-type epitaxy layer stayed after cutting is peeled off substrate;
And the red LED after cutting is directly welded wafer and carries out secondary passivity.
4. LED eutectic wafer according to claim 1, it is characterised in that, described N-type epitaxy layer is specially N-type GaN or InGaN or AlGaN or AlGaInP.
5. LED eutectic wafer according to claim 1, it is characterised in that, described P type epitaxial film is specially P type GaN or InGaN or AlGaN or AlGaInP.
6. apply the red LED that the arbitrary described method of the claims 1-5 prepares and directly weld wafer for one kind.
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CN106299097A (en) * | 2016-10-11 | 2017-01-04 | 黄福强 | One is just pasting positive luminescence LED, lamp bar and high rate display screen thoroughly |
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