CN104659169A - Simple flip LED and production method thereof - Google Patents
Simple flip LED and production method thereof Download PDFInfo
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- CN104659169A CN104659169A CN201510082021.7A CN201510082021A CN104659169A CN 104659169 A CN104659169 A CN 104659169A CN 201510082021 A CN201510082021 A CN 201510082021A CN 104659169 A CN104659169 A CN 104659169A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention provides a simple flip LED and a production method thereof. The production method comprises steps as follows: firstly, providing a substrate, and sequentially growing an N-type GaN layer, an MQW (multiple quantum well) layer and a P-type GaN layer on the surface of the substrate from bottom to top; then etching the P-type GaN layer, the MQW layer and the N-type GaN layer to form a first through hole with the N-type GaN layer exposed; then forming reflective metal on the surface of the P-type GaN layer; then forming an N metal layer on the surface of the N-type GaN layer at the bottom of the first through hole, and meanwhile, forming a barrier layer on the surface of the reflective metal; forming an isolation layer, etching the isolation layer to form a second through hole with the N metal layer exposed, and meanwhile, forming a third through hole with the barrier layer exposed; finally, depositing an electrode layer, forming an N electrode on the surface of the isolation layer and in the second through hole, and forming a P electrode on the surface of the isolation layer and in the third through hole. According to the flip LED chip produced with the method, the process is simplified, so that the production cost is reduced, and the possibility is provided for mass production of flip chips.
Description
Technical field
The present invention relates to LED manufacture technology field, particularly relate to a kind of simple and easy flip LED and preparation method thereof.
Background technology
Light-emitting diode (Light Emitting Diode, be called for short LED) be a kind of light emitting semiconductor device, be made up of the compound of gallium (Ga) with arsenic (As), phosphorus (P), nitrogen (N), indium (In), utilize semiconductor P-N junction electroluminescent principle to make.LED is long with the high and low power consumption of its brightness, life-span, it is fast to start, and power is little, without stroboscopic, be not easy to produce the advantages such as visual fatigue, becomes light source of new generation first-selection.
In traditional formal dress structure LED chip, P type GaN doping difficulty causes hole lowly and not easily grow thick and cause electric current not easily to spread, and the current method preparing super thin metal film or ito thin film on P type GaN surface that generally adopts makes electric current be able to even diffusion.But the light splitting of metal film electrode layer meeting absorbent portion, reduces light extraction efficiency.If by thinning for metal film electrode layer thickness conversely again Limited Current diffusion layer P type GaN layer surface realize all even reliable current spread.Although ITO light transmittance is up to 90%, conductivity is not as good as metal, and the diffusion effect of electric current is also limited.And exiting surface accomplished by the electrode of positive assembling structure and lead-in wire, can block some light during work.Therefore, this P type contact structures constrain the operating current size of LED chip.On the other hand, the PN junction heat of formal dress structure LED chip is derived by Sapphire Substrate, in view of sapphire conductive coefficient is very low, longer concerning thermally conductive pathways large-sized power-type chip, the thermal resistance of formal dress structure LED chip is comparatively large, and operating current is also restricted.
In order to overcome the above-mentioned deficiency of packed LED chip, industry proposes a kind of flip LED chips (Flip chip) structure, and flip LED chips is with its resistance to heavy current impact, and current expansion ability increases, and exempts from the advantages such as bonding wire and progresses into mainstream market.But flip-chip is relative to positive cartridge chip, and its complexity improves greatly, the corresponding increase of cost, hinders the development of flip-chip.Usually, flip LED chips is divided into symmetrical electrode structure and Asymmetric Electric electrode structure, and for encapsulation, symmetrical electrode structure more easily realizes, and encapsulation yield is higher.Current making symmetry electrode flip-chip needs twice isolation technology and metal interconnection technique, and overall photoetching number of times is 7 ~ 8 roads, and cost is quite high.Such as, be the manufacturing process disclosing a kind of flip LED in the patent of 201410390823.X at application number, its technological process roughly comprises: the formation of MESA table top, reflector evaporation, barrier layer evaporation, the first separator formation, metal interconnection layer formation, the second separator formation, electrode layer are formed etc.Find out thus, formed when barrier layer is different with metal interconnection layer in this technique, at least need twice technique; In addition, separator is also twice, complex process.
Therefore, a kind of manufacture method of simple and easy flip LED is provided to be the problem that those skilled in the art need to solve.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of simple and easy flip LED and preparation method thereof, for solving in prior art the complex process preparing LED chip, the problem that cost is high.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of simple and easy flip LED, described manufacture method at least comprises:
One substrate is provided, grows N-type GaN layer, multiple quantum well layer and P type GaN layer successively from bottom to top at described substrate surface;
Etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer;
Reflective metals is formed on described P type GaN layer surface;
Form N metal level on the N-type GaN layer surface of described first via bottoms, form barrier layer in described reflective metal surfaces simultaneously;
Form separator, etch described separator and form the second through hole exposing described N metal level, the third through-hole simultaneously forming the described barrier layer of exposure;
Deposition of electrode layer, forms N electrode, in insulation surface and third through-hole, forms P electrode in insulation surface and the second through hole.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, described substrate is Sapphire Substrate.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, adopt dry etching or wet-etching technology to etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, evaporation and negative glue lift-off technology is adopted to form reflective metals on described P type GaN layer surface.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, the material of described reflective metals adopts one or more the combination of Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au or Ni/Al/Ti/Au, and thickness range is 100 ~ 5000 dusts.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, adopt evaporation and negative glue stripping technology to form described N metal level and barrier layer simultaneously.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, the material on described N metal level and barrier layer all adopts one or more the combination of Cr/AlCr/Pt/Au, Cr/Al/Ti/Pt/Au or Ni/Al/Cr/Pt/Au, and thickness range is 10000 ~ 20000 dusts.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, the material of described separator adopts SiO
2or Si
3n
4or DBR, thickness range is 5000 ~ 20000 dusts.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, the material of described N electrode and P electrode adopts one or more the combination of Cr/AlCr/Pt/Au/Sn, Cr/Al/Ti/Pt/Au/Sn or Ni/Al/Cr/Pt/Au/Sn, and thickness is scope is 10000 ~ 20000 dusts.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, keep predeterminable range between described N electrode and P electrode, described predeterminable range is more than or equal to 150 μm.
As the scheme of a kind of optimization of the manufacture method of the simple and easy flip LED of the present invention, described first through hole comprises circular hole and bar hole, and described second through hole is made in described circular hole.
The present invention also provides a kind of flip LED, and described flip LED comprises:
Substrate;
N-type GaN layer, multiple quantum well layer and P type GaN layer, grow from bottom to top successively at described substrate surface;
First through hole, is formed in described N-type GaN layer, multiple quantum well layer and P type GaN layer, exposes described N-type GaN layer;
Reflective metals, is incorporated into described P type GaN layer surface;
N metal level, is formed at the N-type GaN layer surface of described first via bottoms;
Barrier layer, is formed at described reflective metal surfaces;
Separator, is formed at whole device surface;
Second through hole and third through-hole, be all formed in described separator, and described second through hole exposes described N metal level, and described third through-hole exposes described barrier layer;
N electrode, is formed in described insulation surface and the second through hole;
P electrode, is formed in described insulation surface and third through-hole.
As mentioned above, simple and easy flip LED of the present invention and preparation method thereof, comprises step: first provide a substrate, grows N-type GaN layer, multiple quantum well layer and P type GaN layer successively from bottom to top at described substrate surface; Then etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer; Then reflective metals is formed on described P type GaN layer surface; Then form N metal level on the N-type GaN layer surface of described first via bottoms, form barrier layer in described reflective metal surfaces simultaneously; Form separator again, etch described separator and form the second through hole exposing described N metal level, the third through-hole simultaneously forming the described barrier layer of exposure; Last deposition of electrode layer, forms N electrode, in insulation surface and third through-hole, forms P electrode in insulation surface and the second through hole.The flip LED chips that the present invention makes, simplifies from technique, thus decreases production cost, for flip-chip scale of mass production provides possibility.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the manufacture method of the simple and easy flip LED of the present invention.
Fig. 2 is the structural representation that the manufacture method step S1 of the simple and easy flip LED of the present invention presents.
Fig. 3 a ~ 3b is the structural representation that the manufacture method step S2 of the simple and easy flip LED of the present invention presents.
Fig. 4 a ~ 4b is the structural representation that the manufacture method step S3 of the simple and easy flip LED of the present invention presents.
Fig. 5 a ~ 5b is the structural representation that the manufacture method step S4 of the simple and easy flip LED of the present invention presents.
Fig. 6 a ~ 6b is the structural representation that the manufacture method step S5 of the simple and easy flip LED of the present invention presents.
Fig. 7 a ~ 7b is the structural representation that the manufacture method step S6 of the simple and easy flip LED of the present invention presents.
Element numbers explanation
1 substrate
2 N-type GaN layer
3 multiple quantum well layers
4 P type GaN layer
5 first through holes
51 circular holes
52 bar holes
6 reflective metals
7 N metal levels
8 barrier layers
9 separators
10 second through holes
11 third through-holes
12 N electrode
13 P electrode
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Refer to accompanying drawing 1, the present embodiment provides a kind of manufacture method of simple and easy flip LED, and described manufacture method comprises the following steps:
Step S1, provides a substrate, grows N-type GaN layer, multiple quantum well layer and P type GaN layer successively from bottom to top at described substrate surface;
Step S2, etches described P type GaN layer, multiple quantum well layer and N-type GaN layer, forms the first through hole exposing described N-type GaN layer;
Step S3, forms reflective metals on described P type GaN layer surface;
Step S4, forms N metal level on the N-type GaN layer surface of described first via bottoms, forms barrier layer simultaneously in described reflective metal surfaces;
Step S5, forms separator, etches described separator and forms the second through hole exposing described N metal level, the third through-hole simultaneously forming the described barrier layer of exposure;
Step S6, deposition of electrode layer, forms N electrode, in insulation surface and third through-hole, forms P electrode in insulation surface and the second through hole.
The manufacture method of simple and easy flip LED of the present invention is introduced in detail below in conjunction with accompanying drawing.
First perform step S1, as shown in Figure 2, provide a substrate 1, grow N-type GaN layer 2, multiple quantum well layer 3 and P type GaN layer 4 successively from bottom to top on described substrate 1 surface.
Described substrate 1 can be Sapphire Substrate, certainly, according to technique needs, also can be that other are applicable to making the substrate of LED chip, such as spinelle (MgAl
2o
4), SiC, ZnS, ZnO or GaAs substrate etc., do not limit at this.Substrate 1 described in the present embodiment is preferably Sapphire Substrate.The technique of growth N-type GaN layer 2, multiple quantum well layer 3 and P type GaN layer 4 is common process, and this is no longer going to repeat them.
Then perform step S2, as shown in accompanying drawing 3a ~ 3b, etch described P type GaN layer 4, multiple quantum well layer 3 and N-type GaN layer 2, form the first through hole 5 exposing described N-type GaN layer 2.
Wherein, accompanying drawing 3a is cutaway view, and accompanying drawing 3b is vertical view.Dry etching or wet-etching technology can be adopted to etch described P type GaN layer 4, multiple quantum well layer 3 and N-type GaN layer 2.In the present embodiment, adopt dry etch process, such as ICP or PIE technique etches, and does not carve and wears described N-type GaN layer 2, forms the first through hole 5 exposing described N-type GaN layer 2.
Further, described first through hole 5 comprises circular hole 51 and bar hole 52, and certainly, according to the needs of concrete technology, described first through hole 5 also can be other suitable shapes, such as square.In the present embodiment, described first through hole 5 preferably includes circular hole 51 and bar hole 52, as shown in Figure 3 b.In subsequent technique, in described circular hole 51, N contact electrode can be formed.
Then perform step S3, as shown in Fig. 4 a ~ 4b, form reflective metals 6 on described P type GaN layer 4 surface.
Wherein, accompanying drawing 4a is cutaway view, and accompanying drawing 4b is vertical view.Evaporation and negative glue lift-off technology or evaporation and lithographic technique can be adopted to form reflective metals 6 on the surface of P type GaN layer 4.In the present embodiment, excellent employing evaporation and negative glue lift-off technology is selected to form reflective metals 6 on the surface of P type GaN layer 4.First bear glue in device surface spin coating, and graphical described negative glue, adopt evaporation process deposit reflective metal material afterwards, then by negative glue released part reflective metal material, obtain the reflective metals 6. on desired location (i.e. P type GaN layer 4 surface).
The material of described reflective metals 6 adopts one or more the combination of Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au or Ni/Al/Ti/Au, and thickness range is 100 ~ 5000 dusts.In the present embodiment, the material of described reflective metals 6 can be preferably Ni/Ag/Ti/Pt/Au, and thickness elects 1000 dusts temporarily as.Described reflective metals 6 adopts multiple layer metal in order to take into account speculum, current spread and thermal louver performance.
Then perform step S4, as shown in Fig. 5 a ~ 5b, N-type GaN layer 2 surface bottom described first through hole 5 forms N metal level 7, forms barrier layer 8 on described reflective metals 6 surface simultaneously.
Wherein, accompanying drawing 5a is cutaway view, and accompanying drawing 5b is vertical view.Evaporation and negative glue lift-off technology or evaporation and lithographic technique can be adopted to form N metal level 7 and barrier layer 8 simultaneously.In the present embodiment, excellent employing evaporation and negative glue lift-off technology is selected to form N metal level 7 and barrier layer 8.First bear glue in device surface spin coating, and graphical described negative glue, adopt evaporation process depositing metal material afterwards, then by negative glue released part metal material, obtain N metal level 7 and the barrier layer 8 of desired location.It should be noted that, in the present invention, N metal level 7 and barrier layer 8 are formed simultaneously, refer to and complete negative glue pattern under same photoetching process, and complete evaporation process in same evaporate process, compared with the prior art, manufacture method of the present invention more simple and convenient, cost is lower.The N metal level 7 formed is as the interconnecting metal of N-type GaN layer 2, and the barrier layer 8 of formation is for the protection of reflective metals 6.
Described N metal level 7 is all identical with thickness with the material on barrier layer 8.Preferably, the material on described N metal level 7 and barrier layer 8 all adopts one or more the combination of Cr/AlCr/Pt/Au, Cr/Al/Ti/Pt/Au or Ni/Al/Cr/Pt/Au, and thickness range is 10000 ~ 20000 dusts.In the present embodiment, described N metal level 7 and barrier layer 8 be Cr/AlCr/Pt/Au, thickness is 15000 dusts.
Perform step S5 again, as shown in Fig. 6 a ~ 6b, form separator 9, etch described separator 9 and form the second through hole 10 exposing described N metal level 7, the third through-hole 11 simultaneously forming the described barrier layer of exposure.
Wherein, accompanying drawing 6a is cutaway view, and accompanying drawing 6b is vertical view.It should be noted that, vertical view 6b surface should be isolated layer 9 and almost cover completely, but in order to the position of clear expression second through hole 10 and third through-hole 11, illustrate only peripheral separator in accompanying drawing 6b.Evaporation process can be adopted to form separator 9, for electric insulation at whole device surface.The formation of described second through hole 10 and third through-hole 11, is convenient to follow-up N electrode and P electrode is electrically connected with N-type GaN layer 2 and P type GaN layer 4 respectively.Further, described second through hole 10 is produced in the separator of circular hole 51 position.The material of described separator 9 is SiO
2or Si
3n
4or DBR (distribution Bragg reflector), thickness range is 5000 ~ 20000 dusts.In the present embodiment, the material of described separator 9 is SiO
2, thickness is 9000 dusts.
Finally perform step S6, as shown in Fig. 7 a ~ 7b, deposition of electrode layer, forms N electrode 12 in separator 9 surface and the second through hole 10, in separator 9 surface and third through-hole 11, form P electrode 13.
Wherein, accompanying drawing 7a is cutaway view, and accompanying drawing 7b is vertical view.N electrode 12 and P electrode 13 can be formed by evaporation process, described in, described N electrode 12 and P electrode 13 keep preset space length L, and in order to avoid both are short-circuited, usual preset space length L is more than or equal to 150 μm.The material of described N electrode 12 and P electrode 13 is one or more the combination of Cr/Al/Cr/Pt/Au/Sn, Cr/Al/Ti/Pt/Au/Sn or Ni/Al/Cr/Pt/Au/Sn, and thickness range is 10000 ~ 20000 dusts.In the present embodiment, the material of described N electrode 12 and P electrode 13 is Cr/Al/Cr/Pt/Au/Sn, and thickness range is 15000 dusts.
The present invention also provides a kind of flip LED structure, and as shown in Figure 7a, made by above-mentioned manufacture method, described flip LED structure at least comprises:
Substrate 1;
N-type GaN layer 2, multiple quantum well layer 3 and P type GaN layer 4, grow on described substrate 1 surface from bottom to top successively;
First through hole 5, is formed in described N-type GaN layer 2, multiple quantum well layer 3 and P type GaN layer 4, exposes described N-type GaN layer 2;
Reflective metals 6, is incorporated into described P type GaN layer 4 surface;
N metal level 7, is formed at N-type GaN layer 2 surface bottom described first through hole 5;
Barrier layer 8, is formed at described reflective metals 6 surface;
Separator 9, is formed at whole device surface;
Second through hole 10 and third through-hole 11, be all formed in described separator 9, and described second through hole 10 exposes described N metal level 7, and described third through-hole 11 exposes described barrier layer 8;
N electrode 12, is formed in described separator 9 surface and the second through hole 10;
P electrode 13, is formed in described separator 9 surface and third through-hole 11.
In sum, the invention provides a kind of simple and easy flip LED and preparation method thereof, comprise step: first a substrate is provided, grow N-type GaN layer, multiple quantum well layer and P type GaN layer successively from bottom to top at described substrate surface; Then etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer; Then reflective metals is formed on described P type GaN layer surface; Then form N metal level on the N-type GaN layer surface of described first via bottoms, form barrier layer in described reflective metal surfaces simultaneously; Form separator again, etch described separator and form the second through hole exposing described N metal level, the third through-hole simultaneously forming the described barrier layer of exposure; Last deposition of electrode layer, forms N electrode, in insulation surface and third through-hole, forms P electrode in insulation surface and the second through hole.The flip LED chips that the present invention makes, simplifies from technique, thus decreases production cost, for flip-chip scale of mass production provides possibility.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (12)
1. a manufacture method for simple and easy flip LED, is characterized in that, described manufacture method at least comprises:
One substrate is provided, grows N-type GaN layer, multiple quantum well layer and P type GaN layer successively from bottom to top at described substrate surface;
Etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer;
Reflective metals is formed on described P type GaN layer surface;
Form N metal level on the N-type GaN layer surface of described first via bottoms, form barrier layer in described reflective metal surfaces simultaneously;
Form separator, etch described separator and form the second through hole exposing described N metal level, the third through-hole simultaneously forming the described barrier layer of exposure;
Deposition of electrode layer, forms N electrode, in insulation surface and third through-hole, forms P electrode in insulation surface and the second through hole.
2. the manufacture method of simple and easy flip LED according to claim 1, is characterized in that: described substrate is Sapphire Substrate.
3. the manufacture method of simple and easy flip LED according to claim 1, is characterized in that: adopt dry etching or wet-etching technology to etch described P type GaN layer, multiple quantum well layer and N-type GaN layer, form the first through hole exposing described N-type GaN layer.
4. the manufacture method of simple and easy flip LED according to claim 1, is characterized in that: adopt evaporation and negative glue lift-off technology to form reflective metals on described P type GaN layer surface.
5. the manufacture method of simple and easy flip LED according to claim 1, it is characterized in that: the material of described reflective metals adopts one or more the combination of Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au or Ni/Al/Ti/Au, and thickness range is 100 ~ 5000 dusts.
6. the manufacture method of simple and easy flip LED according to claim 1, is characterized in that: adopt evaporation and negative glue stripping technology to form described N metal level and barrier layer simultaneously.
7. the manufacture method of simple and easy flip LED according to claim 1, it is characterized in that: the material on described N metal level and barrier layer all adopts one or more the combination of Cr/Al/Cr/Pt/Au, Cr/Al/Ti/Pt/Au or Ni/Al/Cr/Pt/Au, and thickness range is 10000 ~ 20000 dusts.
8. the manufacture method of simple and easy flip LED according to claim 1, is characterized in that: the material of described separator adopts SiO
2or Si
3n
4or DBR, thickness range is 5000 ~ 20000 dusts.
9. the manufacture method of simple and easy flip LED according to claim 1, it is characterized in that: the material of described N electrode and P electrode adopts one or more the combination of Cr/Al/Cr/Pt/Au/Sn, Cr/Al/Ti/Pt/Au/Sn or Ni/Al/Cr/Pt/Au/Sn, and thickness is scope is 10000 ~ 20000 dusts.
10. the manufacture method of simple and easy flip LED according to claim 1, it is characterized in that: keep predeterminable range between described N electrode and P electrode, described predeterminable range is more than or equal to 150 μm.
The manufacture method of 11. simple and easy flip LEDs according to claim 1, is characterized in that: described first through hole comprises circular hole and bar hole, and described second through hole is made in described circular hole.
12. 1 kinds of flip LEDs adopting the manufacture method as described in any one of claim 1 ~ 11 to be formed, it is characterized in that, described flip LED comprises:
Substrate;
N-type GaN layer, multiple quantum well layer and P type GaN layer, grow from bottom to top successively at described substrate surface;
First through hole, is formed in described N-type GaN layer, multiple quantum well layer and P type GaN layer, exposes described N-type GaN layer;
Reflective metals, is incorporated into described P type GaN layer surface;
N metal level, is formed at the N-type GaN layer surface of described first via bottoms;
Barrier layer, is formed at described reflective metal surfaces;
Separator, is formed at whole device surface;
Second through hole and third through-hole, be all formed in described separator, and described second through hole exposes described N metal level, and described third through-hole exposes described barrier layer;
N electrode, is formed in described insulation surface and the second through hole;
P electrode, is formed in described insulation surface and third through-hole.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789386A (en) * | 2016-03-21 | 2016-07-20 | 映瑞光电科技(上海)有限公司 | Fabrication method for improving current expansion of vertical light-emitting diode (LED) |
| CN106848006A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Flip LED chips and preparation method thereof |
| CN107863425A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of LED chip with high reflection electrode and preparation method thereof |
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