CN105720138A - Light emitting diode and manufacturing method therefor - Google Patents
Light emitting diode and manufacturing method therefor Download PDFInfo
- Publication number
- CN105720138A CN105720138A CN201610095213.6A CN201610095213A CN105720138A CN 105720138 A CN105720138 A CN 105720138A CN 201610095213 A CN201610095213 A CN 201610095213A CN 105720138 A CN105720138 A CN 105720138A
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- light emitting
- emitting diode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses a light emitting diode with three-dimensional type expansion electrodes and a manufacturing method for the light emitting diode. The light emitting diode comprises a first connecting layer, a light emitting layer, a second connecting layer, and a first metal electrode and a second metal electrode formed on the first connecting layer and the second connecting layer respectively; the first metal electrode comprises an electrode main body and at least an outwardly-extended metal expansion part; and the metal expansion part and the surface of the first connecting layer are in incomplete contact. The distance between the first metal expansion part and the light emitting layer is increased, so that the light absorption of the metal electrodes can be lowered and the efficiency of the light emitting diode element is improved; and meanwhile, due to the three-dimensional structured expansion electrodes, the surface area of the surface metal can be enlarged and the radiating area of the element can be enlarged as well, so that the heat generated by the element can be exported more rapidly, and the element efficiency and the reliability loss are lowered.
Description
Technical field
The present invention relates to light emitting semiconductor device, be specially a kind of Light-emitting Diode And Its Making Method with expansion electrode.
Background technology
Light emitting diode (LightEmittingDiode is called for short LED) is a kind of light emitting semiconductor device, utilizes quasiconductor P-N junction electroluminescent principle to make.LED, with advantages such as the high and low power consumption of its brightness, life-span length, power are little, becomes a new generation's light source first-selected.
The electrode of current most light emitting diode all adopts the design of two-dimensional structure, is specially and tightly attaches to current conducting layer (TCL)/p, n-type semiconductor layer surface.In large-sized light emitting diode, in order to allow electric current have conduction distance farther out, electrode part increases extension pattern (finger) design that strip (or ring-type, netted etc.) extends, and it equally tightly attaches to TCL/p, n-type semiconductor layer surface.But owing to the metal material of electrode structure is light tight, can stop and/or a degree of light of extinction, cause that the luminous efficiency of light emitting diode reduces.Fig. 1 is the light emitting diode schematic diagram that electrode has expansion structure.
Summary of the invention
For the problems referred to above, the invention provides a kind of Light-emitting Diode And Its Making Method with expansion electrode, this expansion electrode and the surface incomplete contact between being disposed below articulamentum, increase the distance of expansion electrode and luminescent layer, can effectively reduce light and be expanded the absorption of electrode.
This invention address that the technical scheme of the problems referred to above is: light emitting diode, including the first articulamentum, luminescent layer, the second articulamentum, and it is respectively formed in the first metal electrode on described first articulamentum and the second articulamentum and the second metal electrode, described first metal electrode includes electrode body and at least one outward extending metal extension, described metal extension and the surface incomplete contact between of the first articulamentum, increase the distance of described first metal extension and described luminescent layer.
Preferably, described first articulamentum includes the first quasiconductor and current conducting layer, and described second articulamentum includes the second semiconductor layer.In some embodiments, it is also possible to the first articulamentum is the first semiconductor layer.
Preferably, between described metal extension and described first articulamentum, there is space.
Preferably, the side part of contiguous first articulamentum in described metal extension is unsettled.
Preferably, described metal extension is metal wire, has two contact points, and first make contact is positioned at described electrode body, and the second contact point is positioned on the surface of described first articulamentum, middle unsettled.
Invention also provides the manufacture method of a kind of light emitting diode, including forming the first articulamentum, luminescent layer and the secondth connection, and on the surface of the first articulamentum and the second articulamentum, make the first metal electrode and the second metal electrode respectively, first metal electrode of wherein said formation includes electrode body and at least one outward extending metal extension, described metal extension and the surface incomplete contact between of the first articulamentum, increase the distance of described first metal extension and described luminescent layer.
Preferably, described first metal electrode is obtained by following method: first make described electrode body on the surface of the first articulamentum, then adopts the mode of routing to make described metal extension.
Preferably, respectively with the surface of described electrode body and the first articulamentum for contact point, metal wire is connected described contact point, form metal extension.
Preferably, described first metal electrode is obtained by following method: first forms mask pattern on the surface of the first articulamentum, then adopts the mode of evaporation to form metal extension, remove described mask pattern.
Preferably, described first metal electrode is obtained by following method: first form mask pattern on the surface of the first articulamentum, then adopts the mode of evaporation and plating to form described first metal electrode, removes described mask pattern.
The present invention at least possesses following beneficial effect:
The part metals extension of (1) first electrode increases with the distance of luminescent layer, it is possible to decrease the extinction of metal electrode, promotes light-emitting diode efficiency；
(2) metal is compared other materials (oxide, nitride) and is had preferably heat-sinking capability, therefore the metal of element surface has a great impact for the heat-sinking capability of element surface, the present invention can increase the surface area of surface metal by the expansion electrode of three dimensional structure, and then increase the area of dissipation of element, make heat energy produced by element to be faster exported, reduce the efficiency of element and the loss of reliability.
Other features and advantages of the present invention will be set forth in the following description, and, partly become apparent from description, or understand by implementing the present invention.The purpose of the present invention and other advantages can be realized by structure specifically noted in description, claims and accompanying drawing and be obtained.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for description, is used for together with embodiments of the present invention explaining the present invention, is not intended that limitation of the present invention.Additionally, accompanying drawing data are to describe summary, it is not drawn to scale.
Fig. 1 is the existing light emitting diode schematic diagram with expansion electrode.
Fig. 2 is the light emitting diode schematic diagram of the embodiment of the present invention 1.
Fig. 3 ~ Fig. 7 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 1.
Fig. 8 ~ Figure 12 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 2.
Figure 13 is the light emitting diode schematic diagram of the embodiment of the present invention 3.
Figure 14 ~ Figure 16 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 3.
In figure, each label is expressed as follows:
110,210,310,410: substrate；
120,220,320,420:n type semiconductor layer；
130,230,330,430: luminescent layer；
140,240,340,440:p type semiconductor layer；
150,250,350,450: current conducting layer；
160,260,360,460:n electrodes；
170:p electrode；
The main body of 271,371,471:p electrodes；
The metal extension of 272,372,472:p electrodes.
Detailed description of the invention
Embodiments below discloses a kind of light-emitting diode chip for backlight unit with 3-dimensional metal expansion electrode, and this metal expansion electrode can be hanging shape, thus adding the distance with luminescent layer, can effectively reduce light and being expanded the absorption of electrode.In light emitting diode of the present invention, the first semiconductor layer can be n-type semiconductor layer or p-type semiconductor layer, and following example are all with p-type semiconductor layer for the first semiconductor layer, but the present invention is not limited thereto.Same, the light emitting diode of the present invention can be horizontal structure or vertical stratification, and following example are par structure, when light emitting diode is vertical stratification, is positioned at the electrode below luminescent layer and may be disposed at the back side of substrate.
Embodiment 1
This embodiment offers unsettled LED chip construction of a kind of expansion electrode part and preparation method thereof.Refer to Fig. 1, a kind of light-emitting diode chip for backlight unit, including substrate 210, n-type semiconductor layer 220, luminescent layer 230, p-type semiconductor layer 240, current conducting layer 250, n-electrode 260 and p-electrode 270.
Wherein, substrate 210 is chosen and is included but not limited to sapphire, aluminium nitride, gallium nitride, silicon, carborundum, and its surface texture can be planar structure or patterning graph structure.N-type semiconductor layer 220, luminescent layer 230 and p-type semiconductor layer stack gradually on substrate 210, this part-structure adopts currently known structure, various known interposed layer can be set between the layers, as arranged cushion between substrate and n-type semiconductor layer, arrange superlattices stress-buffer layer between n-type semiconductor layer and luminescent layer, arranging electronic barrier layer etc. between luminescent layer and p-type semiconductor layer, in material, can be selected for the material based on nitride or the material based on AlGaInP.As a preferred embodiment, can arranging current conducting layer 250 on the surface of p-type semiconductor layer, material can be selected for transparent conductive metal nitride.N-electrode 260 is positioned on the surface of n-type semiconductor layer, and p-electrode 270 is positioned on the surface of current conducting layer 250, all selects metal material.
Concrete, p-electrode 270 is made up of main body 271 and metal extension 272, and wherein main body 271 is electrode pad, use for follow-up packaging and routing, metal extension 272 is main body 271 outwardly extending portion, is used for extending electric current, can be the metal patterns such as strip, ring-type, netted extension.Wherein, the lower surface of metal extension 272 not exclusively tightly attaches to the surface of current conducting layer 250, and form space 273 between current conducting layer 250, form the expansion electrode of three dimensional structure, part is unsettled, so add the distance of metal extension 272 and luminescent layer 230 on the one hand, reduce the extinction of this metal extension, the surface area of surface metal is increased on the other hand by three dimensional structure, and then increase the area of dissipation of element, make heat energy produced by element to be faster exported, reduce the efficiency of element and the loss of reliability.
Manufacture method below in conjunction with the above-mentioned light emitting diode in Fig. 3 ~ 7 pair is briefly described.
First, form n-type semiconductor layer 220, luminescent layer 230, p-type semiconductor layer 240 and current conducting layer 250 at substrate 210, and define the table top of n-electrode, as shown in Figure 3；
Then, respectively n-type semiconductor layer 220, p-type semiconductor layer 240 surface on make the main body 271 of n-electrode 260 and p-electrode, as shown in Figure 4；
Then, the surface of the structure shown in Fig. 4 makes mask pattern 280, reserves the position 280a of metal extension 272 and current conducting layer 250 contact point, as shown in Figure 5；
Then, evaporation metal material layer 290 on the surface of the structure shown in Fig. 5, as shown in Figure 6；
Finally, mask pattern 280 is removed, thus having the light-emitting diode chip for backlight unit of hanging type metal expansion electrode, as shown in Figure 7.
Embodiment 2
This embodiment offers the another kind of method for making above-mentioned light-emitting diode chip for backlight unit, develop in conjunction with gold-tinted, be deposited with and three kinds of techniques of plating, first the position of the main body of the position of n-electrode, p-electrode and the position of the contact point of metal extension and current conducting layer are defined, wherein extension, the Seed Layer needed for galvanoplastic is produced in aforementioned three positions followed by vapour deposition method, electrode structure is made by recycling galvanoplastic, is briefly described below in conjunction with Fig. 8 ~ 12.
First, form n-type semiconductor layer 320, luminescent layer 330, p-type semiconductor layer 340 and current conducting layer 350 at substrate 310, and define the table top of n-electrode, as shown in Figure 8；
Then, the surface of aforementioned structure makes mask pattern 380, reserve the position 360a of n-electrode, the position 371a of p-electrode, metal extension 372 and current conducting layer 350 contact point 372a, as shown in Figure 9；
Then, the mode of evaporation is adopted to form Seed Layer 390 at 360a, 371a and 372a, as shown in Figure 10；
Then, the mode of plating is adopted to form n-electrode 360, the main body 371 of p-electrode and metal extension 372, as shown in figure 11；
Finally, mask pattern 380 is removed, as shown in figure 12.
Embodiment 3
Present embodiments provide unsettled light-emitting diode chip for backlight unit of another kind of expansion electrode part and preparation method thereof.Being different from embodiment 1, the metal extension 472 of the p-electrode of the light emitting diode of the present embodiment adopts metal wire, has two end points, and the first end points is positioned at electrode body 471, and the second end points is positioned on the surface of current conducting layer 450, middle unsettled, as shown in figure 13.In the present embodiment, the live width of metal wire is 1 ~ 20 micron.
Manufacture method below in conjunction with the above-mentioned light emitting diode in Figure 14 ~ 16 pair is briefly described.
First, form n-type semiconductor layer 420, luminescent layer 430, p-type semiconductor layer 440 and current conducting layer 450 at substrate 410, and define the table top of n-electrode, as shown in figure 14；
Then, respectively n-type semiconductor layer 420, p-type semiconductor layer 440 surface on make the main body 471 of n-electrode 460 and p-electrode, as shown in figure 15；
Finally, adopting the mode of routing to form the metal extension 472 of p-electrode, the surface that the first contact is current conducting layer of routing, the second contact is the main part of p-electrode, and middle unsettled, the component being abutted against contact successively carrys out the gravity of dispersed metal line, as shown in figure 16.
In the present embodiment, formed the expansion electrode of hanging type by the mode of routing, it is not necessary to the techniques such as gold-tinted development, greatly simplify preparation technology.
Although having been described above the exemplary embodiment of the present invention, it is understood that, the present invention should not necessarily be limited by these exemplary embodiments but those skilled in the art can carry out variations and modifications in the spirit and scope of the present invention required by such as claims below.
Claims (10)
1. light emitting diode, including the first articulamentum, luminescent layer, the second articulamentum, and it is respectively formed in the first metal electrode on described first articulamentum and the second articulamentum and the second metal electrode, it is characterized in that: described first metal electrode includes electrode body and at least one outward extending metal extension, described metal extension and the surface incomplete contact between of the first articulamentum, increase the distance of described first metal extension and described luminescent layer.
2. light emitting diode according to claim 1, it is characterised in that: described first articulamentum includes the first quasiconductor and current conducting layer, and described second articulamentum includes the second semiconductor layer.
3. light emitting diode according to claim 1, it is characterised in that: between described metal extension and described first articulamentum, there is space.
4. light emitting diode according to claim 1, it is characterised in that: the side part of contiguous first articulamentum in described metal extension is unsettled.
5. light emitting diode according to claim 4, it is characterised in that: described metal extension is metal wire, has two contact points, and first make contact is positioned at described electrode body, and the second contact point is positioned on the surface of described first articulamentum, middle unsettled.
6. the manufacture method of light emitting diode, including forming the first articulamentum, luminescent layer and the secondth connection, and on the surface of the first articulamentum and the second articulamentum, make the first metal electrode and the second metal electrode respectively, it is characterized in that: the first metal electrode of described formation includes electrode body and at least one outward extending metal extension, described metal extension and the surface incomplete contact between of the first articulamentum, increase the distance of described first metal extension and described luminescent layer.
7. the manufacture method of light emitting diode according to claim 6, it is characterized in that: described first metal electrode is obtained by following method: on the surface of the first articulamentum, first make described electrode body, then adopt the mode of routing to make described metal extension.
8. the manufacture method of light emitting diode according to claim 7, it is characterised in that: respectively with the surface of described electrode body and the first articulamentum for contact point, metal wire is connected described contact point, form metal extension.
9. the manufacture method of light emitting diode according to claim 6, it is characterized in that: described first metal electrode is obtained by following method: on the surface of the first articulamentum, first form mask pattern, then the mode adopting evaporation forms metal extension, removes described mask pattern.
10. the manufacture method of light emitting diode according to claim 6, it is characterized in that: described first metal electrode is obtained by following method: on the surface of the first articulamentum, first form mask pattern, then adopt the mode of evaporation and plating to form described first metal electrode, remove described mask pattern.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610095213.6A CN105720138B (en) | 2016-02-22 | 2016-02-22 | Light emitting diode and preparation method thereof |
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| CN201610095213.6A CN105720138B (en) | 2016-02-22 | 2016-02-22 | Light emitting diode and preparation method thereof |
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| CN105720138B CN105720138B (en) | 2018-07-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| CN107887487A (en) * | 2017-10-27 | 2018-04-06 | 扬州乾照光电有限公司 | A kind of light emitting diode and its manufacture method |
| CN109973838A (en) * | 2019-04-04 | 2019-07-05 | 固安翌光科技有限公司 | A kind of LED atmosphere lamp |
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|---|---|---|---|---|
| JP2012019153A (en) * | 2010-07-09 | 2012-01-26 | Sharp Corp | Semiconductor light-emitting device and semiconductor package having the same |
| JP2012175005A (en) * | 2011-02-23 | 2012-09-10 | Showa Denko Kk | Semiconductor light-emitting device |
| JP2013135018A (en) * | 2011-12-26 | 2013-07-08 | Sanken Electric Co Ltd | Light-emitting element |
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2016
- 2016-02-22 CN CN201610095213.6A patent/CN105720138B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012019153A (en) * | 2010-07-09 | 2012-01-26 | Sharp Corp | Semiconductor light-emitting device and semiconductor package having the same |
| JP2012175005A (en) * | 2011-02-23 | 2012-09-10 | Showa Denko Kk | Semiconductor light-emitting device |
| JP2013135018A (en) * | 2011-12-26 | 2013-07-08 | Sanken Electric Co Ltd | Light-emitting element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| CN106449924B (en) * | 2016-08-30 | 2018-07-27 | 厦门乾照光电股份有限公司 | A kind of flip LED chips and preparation method thereof that photo-thermal is electrically separated |
| CN107887487A (en) * | 2017-10-27 | 2018-04-06 | 扬州乾照光电有限公司 | A kind of light emitting diode and its manufacture method |
| CN109973838A (en) * | 2019-04-04 | 2019-07-05 | 固安翌光科技有限公司 | A kind of LED atmosphere lamp |
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| CN105720138B (en) | 2018-07-06 |
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