CN102341923B - Led assembly having redundancy electrode and fabrication method thereof - Google Patents
Led assembly having redundancy electrode and fabrication method thereof Download PDFInfo
- Publication number
- CN102341923B CN102341923B CN200980136924.1A CN200980136924A CN102341923B CN 102341923 B CN102341923 B CN 102341923B CN 200980136924 A CN200980136924 A CN 200980136924A CN 102341923 B CN102341923 B CN 102341923B
- Authority
- CN
- China
- Prior art keywords
- electrode
- coating
- substrate
- led matrix
- redundant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000011248 coating agent Substances 0.000 claims description 108
- 238000000576 coating method Methods 0.000 claims description 108
- 239000011159 matrix material Substances 0.000 claims description 64
- 239000004020 conductor Substances 0.000 claims description 54
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 53
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims 4
- 229910005540 GaP Inorganic materials 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000009183 running Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 235000015110 jellies Nutrition 0.000 description 5
- 239000008274 jelly Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to an LED assembly having a redundancy electrode and a fabrication method thereof. The LED assembly having a redundancy electrode according to the present invention, comprises a conductive substrate for LED, a first clad layer formed on the substrate, an active area formed on the first clad layer, a second clad layer formed on the active area, a junction layer formedon the second clad layer, a first electrode formed on the second clad layer or on the junction layer, a second electrode formed beneath the substrate, a redundancy electrode formed in the partially exposed area of one of the substrate and the first clad layer, a first lead wire-bonded to the first electrode, and a second lead bonded to the second electrode by a conductive adhesive, and wire-bonded to the redundancy electrode.
Description
Technical field
The present invention relates to LED matrix and manufacture method thereof, especially relate to LED matrix and manufacture method thereof with redundant electrode.
Background technology
LED (Light Emitting Diode) is the light-emitting diode for the light radiation semiconductor subassembly, launches the light of different colours such as red, green, blue, Huang, is used in the electronics indicator light of various electronic products and instrument etc. usually.LED has pn knot knot face structure.Pn knot knot face structure adds forward current, makes the electronics in its n zone accelerate to flow to the p zone because of electric field.The electronics that flows to the p zone is combined with the hole of acceptor level or valence band state again, and according to chip material, and by potential difference energy radiating light, this phenomenon is injection electroluminescence.The representative materials of led chip is GaAs (GaAs), gallium arsenide phosphide (GaAsP), gallium phosphide (GaP), Aluminum gallium arsenide (GaAlAs), carborundum (SiC) etc.
Fig. 1 is the vertical view of the led chip structure of prior art, and Fig. 2 is the cross-sectional structure schematic diagram of the led chip structure of prior art, and Fig. 3 is the LED matrix syndeton schematic diagram of prior art.As shown in Figure 1 to Figure 3, the red LED chips of prior art comprises substrate 101, active region 103, first coating 105, second coating 107, lamination (not shown), first electrode 109 and second electrode 111, because the substrate 101 of red LED chips is conductivity, first electrode 109 engages by lead-in wire 119 with first conductor 117, and the Ag conducting resinl (Paste) 113 that second electrode 111 passes through conducting resinl directly is connected with second conductor 115.Above-mentioned have only an electrode to have the wire-bonded structure, is called 1 integrated structure.LED matrix with prior art of 1 integrated structure, because of a variety of causes, second electrode 111 that is connected by Ag conducting resinl 113 separates easily with the joint between second conductor 117.When for example LED matrix is mounted to substrate, owing to impact Ag conducting resinl 113 is dropped, perhaps because welding causes the rapid variation of temperature, Ag conducting resinl 113 is dropped.Separating of joint between second electrode 111 and second conductor 117, cause the fatal weakness of LED matrix of conventional art.
The red LED chips of prior art is according to the order development of its gallium phosphide (GaP)/gallium phosphide (GaP), gallium arsenide phosphide (GaAsP)/GaAs (GaAs), aluminum gallium arsenide (AlGaAs)/GaAs (GaAs), InGaAIP/ GaAs (GaAs).InGaAIP/ GaAs (GaAs) chip wherein, owing to possess high brightness and outstanding reliability, thus be widely used.Fig. 4 is in the led chip of prior art, and the structural representation of InGaAIP/ GaAs (GaAs) chip structure, Fig. 5 are the schematic diagrames of InGaAIP/ GaAs (GaAs) chip light emitting state.InGaAIP/ GaAs (GaAs) chip comprises active region 203, first coating 205, and second coating 207 of GaAs (GaAs) substrate 201, InGaAIP material.As shown in Figure 4, GaAs (GaAs) substrate 201 of InGaAIP/ GaAs (GaAs) chip is opaque material for the light that active layer produces, absorption as shown in Figure 5, causes the emission efficiency of light very low by the light of active region 203 generations of InGaAIP material.
In order to strengthen the emission efficiency of light, remove GaAs (GaAs) substrate of light absorption substrate, adopt as gallium phosphide (GaP) substrate to have the method that the substrate of printing opacity function engages.Fig. 6 is the drawing of led chip structure of the replacement substrate of diagram prior art, and Fig. 7 is the schematic diagram of led chip luminance of the replacement substrate of prior art.InGaAIP/ GaAs (GaAs) chip as shown in Figure 4, behind removal GaAs (GaAs) substrate, the substrate 301 that has the printing opacity function as gallium phosphide (GaP) substrate engages with active region 203 and second coating 207 of first coating 205, InGaAIP material.As shown in Figure 6, the led chip of replacement substrate has substrate 301 transmissions of printing opacity function by the light of active region 203 generations of InGaAIP material as gallium phosphide (GaP) substrate, as shown in Figure 7, cause the emission efficiency of light very high.
As Figure 6 and Figure 7, the led chip of the replacement substrate of prior art because of the engaging force deficiency, has the substrate 301 of printing opacity function and is easy to generate with joint between second coating 207 and separates as gallium phosphide (GaP) substrate.In addition, the led chip transparent substrates 301 of the replacement substrate of prior art still is conductive board, as shown in Figure 1 to Figure 3, has 1 integrated structure.In addition, the led chip of the replacement substrate of prior art, because of a variety of causes, second electrode that is connected by the Ag conducting resinl separates easily with the joint between second conductor.As mentioned above, engage between transparent substrates 301 and second coating 207 separate and second electrode and second conductor between the separating of combination, cause the fatal weakness of LED matrix of the replacement substrate of prior art.
The utility model content
In order to solve above-mentioned existing in prior technology problem, the invention provides a kind of LED matrix and manufacture method thereof with redundant electrode, by redundant electrode is set at led chip, cause the joint between electrode and the conductor to separate even make use conducting resinl connection electrode and conductor, the still steady running of this LED matrix.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: have the LED matrix of redundant electrode, comprising: the LED conductive board; First coating that above described conductive board, forms; The active region that above described first coating, forms; Second coating that above described active region, forms; First electrode that a side forms above described second coating; The lamination that between described second coating and described first electrode, forms; Second electrode that below described conductive board, forms; The redundant electrode that the zone forms is exposed in arbitrary part in described conductive board or described first coating; By second conductor that conducting resinl is connected with described second electrode, described second conductor is also by second lead-in wire and described redundant electrode engagement; By first conductor of described first lead-in wire with described first electrode engagement.
Further, the material of described conductive board is any one material in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP), the indium phosphide (InP).
Further, described conductive board is the replacement substrate.
Further, the material of described conductive board is any one material in gallium phosphide (GaP), carborundum (SiC), gallium nitride (GaN), the zinc oxide (ZnO).
Further, at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
Further, described first electrode and/or described redundant electrode are metal material.
Further, described conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: to the invention provides a kind of LED matrix with redundant electrode, by redundant electrode is set at led chip, cause the joint between electrode and the conductor to separate even make use conducting resinl connection electrode and conductor, the still steady running of this LED matrix.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: have the manufacture method of the LED matrix of redundant electrode, comprising:
Steps A, selection LED conductive board;
Step B, above described conductive board, form first coating;
Step C, above described first coating, form the active region;
Step D, above described active region, form second coating;
Step e, above described second coating, form lamination;
Step F, expose the zone arbitrary local formation of described first coating or described conductive board;
Step G, above described lamination, form first electrode, and form redundant electrode in the described zone of exposing;
Step H, below described conductive board, form second electrode;
Step I, by conducting resinl described second electrode is connected with described second conductor;
Step J, by first lead-in wire described first electrode is engaged with described first conductor, going between by second engages described redundant electrode with described second conductor.
Further, the material of described conductive board is any one material in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP).
Further, in the described step F, form the described zone of exposing by dry-etching method or wet etching.
Further, described step F also comprises following content: by dry-etching method or wet etching, at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
Further, described first electrode and/or described redundant electrode are metal material.
Further, described conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: to the invention provides a kind of manufacture method with LED matrix of redundant electrode, by redundant electrode is set at led chip, even make the joint between substrate and the coating separate, perhaps connect electrode owing to conducting resinl and conductor causes the joint between electrode and the conductor to separate, this LED matrix still can steady running.
The 3rd technical scheme that the present invention solves the problems of the technologies described above is as follows: have the manufacture method of the LED matrix of redundant electrode, comprising: steps A, selection LED first substrate;
Step B, above described first substrate, form first coating;
Step C, above described first coating, form the active region;
Step D, above described active region, form second coating;
Step e, described first substrate of removal;
Step F, below described first coating, engage LED with second substrate of conductivity;
Step G, make arbitrary local formation of described first coating or described second substrate expose the zone;
Step H, above described second coating, form first electrode, and form redundant electrode in arbitrary zone of exposing of described first coating or described second substrate;
Step I, below described second substrate, form second electrode;
Step J, by conducting resinl described second electrode is engaged with described second conductor;
Step K, by first lead-in wire described first electrode is engaged with described first conductor, going between by second engages described redundant electrode with described second conductor.
Further, described first substrate is the light absorption substrate.
Further, the material of described first substrate is GaAs (GaAs).
Further, described second substrate is transparent substrates.
Further, the material of described second substrate is any one material in gallium phosphide (GaP), carborundum (SiC), gallium nitride (GaN) and the zinc oxide (ZnO).
Further, among the described step G, by forming the described zone of exposing by dry-etching method or wet etching.
Further, described step G also comprises following content: by in formula etching method or wet etching, at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
Further, described first electrode and/or described redundant electrode are metal material.
Further, described conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: to the invention provides a kind of manufacture method with LED matrix of redundant electrode, when led chip increases redundant electrode, make this chip sides have male and fomale(M﹠F), need not to increase extra engineering, also can strengthen luminous efficiency.
The invention has the beneficial effects as follows: LED matrix and manufacture method thereof with redundant electrode are provided, increase redundant electrode, it is cheap, can guarantee high reliability simultaneously.
Description of drawings
Fig. 1 is the vertical view of the led chip structure of prior art;
Fig. 2 is the cross-sectional structure schematic diagram of the led chip structure of prior art;
Fig. 3 is the structural representation of the LED matrix syndeton of prior art;
Fig. 4 is in the led chip of prior art, the structural representation of InGaAIP/ GaAs (GaAs) chip structure;
Fig. 5 is the schematic diagram of InGaAIP/ GaAs (GaAs) chip light emitting state;
Fig. 6 is the structural representation of led chip structure of the replacement substrate of prior art;
Fig. 7 is the schematic diagram of led chip luminance of the replacement substrate of prior art;
Fig. 8 is the cross-sectional structure schematic diagram of the led chip structure with redundant electrode of the preferred embodiment of the present invention;
Fig. 9 is the vertical view of the led chip structure with redundant electrode of the preferred embodiment of the present invention;
Figure 10 is the structure chart of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention;
Figure 11 is the manufacture method flow chart of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 12 is the manufacture method flow chart one of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 13 is the manufacture method flowchart 2 of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 14 is the accompanying drawing one of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention,
Figure 15 is the accompanying drawing two of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention;
Figure 16 is the accompanying drawing three of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention;
Figure 17 is the accompanying drawing four of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention.
Embodiment
Figure 10 is the structural representation of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention.
A kind of have a redundant electrode led chip, it comprises: conductive board 401, active region 403, first coating (not shown among the figure), second coating 407, first electrode 409, second electrode 411 and redundant electrode 450, second coating 407 can also comprise lamination (not shown among the figure), realizes the ohmic contact of second coating 407 and first electrode 409 by this lamination.
The material of conductive board 401 can be in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP), the indium phosphide (InP) any one, and it has conductivity.
This redundancy electrode 450 is positioned on first coating, also can be positioned at a side of conductive board 401.
Because it has conductivity the conductive board 401 of the led chip with redundant electrode of the present invention, second electrode 411 directly is connected with second conductor 417 by the conducting resinl 413 with conducting function, and this conducting resinl 413 is preferably the Ag conducting resinl.
Because being formed on first coating substrate 401 alive, exposes on the zone by the part that etching method forms at redundant electrode 450, therefore, even make because conducting resinl 413 connection second electrodes 411 and second conductor 417 cause second electrode 411 to separate or substrate 401 separates with joint between first coating in the joint between second conductor 417, the present invention has the LED matrix of redundant electrode still can steady running.
Below in conjunction with accompanying drawing, embodiments of the invention are described in further detail.
Fig. 8 is the cross-sectional structure schematic diagram of the led chip structure with redundant electrode of the preferred embodiment of the present invention; Fig. 9 is the vertical view of the led chip structure with redundant electrode of the preferred embodiment of the present invention; Figure 10 is the schematic diagram of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention.Extremely shown in Figure 17 as Figure 14, for the formation position of redundant electrode is described, the led chip with redundant electrode of the preferred embodiments of the present invention, it comprises: substrate 401, active region 403, first coating 405, second coating 407, first electrode 409, second electrode 411 and redundant electrode 450.Second coating 407 can also comprise lamination (not shown), realizes the ohmic contact of second coating 407 and first electrode 409 by this lamination.The material of substrate 401 is in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP) any one, and it has conductivity.
Because the substrate 401 with LED matrix of redundant electrode of the present invention has conductivity, second electrode 411 directly is connected with second conductor 417 by the conducting resinl 413 with conducting function, and this conducting resinl 413 is preferably the Ag conducting resinl.In order to make the led chip steady running with redundant electrode 450 of the present invention, second conductor 417 is preferable with cup-shape.
Because being formed on first coating substrate 401 alive, exposes on the zone by the part that etching method forms at redundant electrode 450, therefore, even make because conducting resinl 413 connection second electrodes 411 and second conductor 417 cause second electrode 411 to separate or substrate 401 separates with joint between first coating in the joint between second conductor 417, the present invention has the LED matrix of redundant electrode still can steady running.
In other preferred embodiments of the present invention, expose method by the part that utilizes first coating or substrate 401, make in substrate 401, first coating 405, active region 403 or second coating 407, the arbitrary side of at least one is to have a plurality of concavo-convex male and fomale(M﹠F)s.Etching engineering when utilize forming redundant electrode 450 makes the side with led chip of redundant electrode of the present invention have male and fomale(M﹠F), need not to increase extra engineering, also can strengthen luminous efficiency.Redundant electrode 450 can have multiple shape, and this is known by the insider of the technical field of the invention.Redundant electrode 450 is connected by second wire-bonded 421 with second conductor 417.
Figure 11 is the manufacture method flow chart of the LED matrix with redundant electrode of the preferred embodiment of the present invention.
As shown in figure 11, in order to make the LED matrix with redundant electrode of the present invention, it may further comprise the steps:
Step 501 provides suitable substrate, substrate can in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP) any one and have conductivity;
Step 503 forms first coating above substrate;
Step 505 forms the active region of producing light above first coating;
Step 507 forms second coating above the active region;
Step 513 is formed for second electrode of ohmic contact below substrate, second electrode is that metal material is preferable;
Figure 12 and Figure 13 are the manufacture method flow charts of the LED matrix with redundant electrode of the preferred embodiment of the present invention.
As Figure 12 and shown in Figure 13, in order to make the LED matrix with redundant electrode of the present invention, it may further comprise the steps:
Step 601 provides first substrate, and first substrate is the light absorption substrate, as GaAs (GaAs) substrate, and has conductivity;
Step 603 forms first coating above first substrate;
Step 605 forms the active region of producing light above first coating;
Step 607 forms second coating above the active region;
Step 609 is removed first substrate that absorbs the light that is produced by the active region and reduce light emission efficient;
Step 617 is formed for second electrode of ohmic contact below second substrate, second electrode is that metal material is preferable;
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and is within the spirit and principles in the present invention all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Use possibility on the industry
LED matrix and manufacture method thereof with redundant electrode of the present invention, except first electrode of the formation of a side above second coating or lamination and second electrode that below conductive board, forms, in described substrate and first coating, wherein any one part is exposed the zone and is formed redundant electrode, provides cheap and has guaranteed the LED matrix of high reliability.
Claims (23)
1. the LED matrix with redundant electrode is characterized in that, described LED matrix with redundant electrode comprises: conductive board;
First coating that above described conductive board, forms;
The active region that above described first coating, forms;
Second coating that above described active region, forms;
First electrode that a side forms above described second coating;
Second electrode that below described conductive board, forms;
The redundant electrode that the zone forms is exposed in arbitrary part in described conductive board or described first coating;
By second conductor that conducting resinl is connected with described second electrode, described second conductor is also by second lead-in wire and described redundant electrode engagement;
By first conductor of first lead-in wire with described first electrode engagement.
2. a kind of LED matrix with redundant electrode according to claim 1 is characterized in that: the material of described conductive board is a kind of in silicon, carborundum, gallium nitride, GaAs, zinc oxide, gallium phosphide, the indium phosphide.
3. the LED matrix with redundant electrode according to claim 1, it is characterized in that: described conductive board is the replacement substrate.
4. the LED matrix with redundant electrode according to claim 3 is characterized in that: the material of described conductive board is a kind of in gallium phosphide, carborundum, gallium nitride, the zinc oxide.
5. the LED matrix with redundant electrode according to claim 1 is characterized in that: at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
6. the LED matrix with redundant electrode according to claim 1, it is characterized in that: described first electrode and/or described redundant electrode are metal material.
7. the LED matrix with redundant electrode according to claim 1, it is characterized in that: described conducting resinl is the Ag conducting resinl.
8. according to each described LED matrix with redundant electrode in the claim 1 to 7, it is characterized in that: described LED matrix with redundant electrode also comprises: the lamination that forms between described second coating and described first electrode.
9. have the manufacture method of the LED matrix of redundant electrode, it is characterized in that, described manufacture method with LED matrix of redundant electrode comprises:
Steps A, selection LED conductive board;
Step B, above described conductive board, form first coating;
Step C, above described first coating, form the active region;
Step D, above described active region, form second coating;
Step e, above described second coating, form lamination;
Step F, expose the zone arbitrary local formation of described first coating or described conductive board;
Step G, above described lamination, form first electrode, and form redundant electrode in the described zone of exposing;
Step H, below described conductive board, form second electrode;
Step I, by conducting resinl described second electrode is connected with second conductor;
Step J, by first lead-in wire described first electrode is engaged with first conductor, going between by second engages described redundant electrode with described second conductor.
10. the manufacture method with LED matrix of redundant electrode according to claim 9 is characterized in that, the material of described conductive board is a kind of in silicon, carborundum, gallium nitride, GaAs, zinc oxide, gallium phosphide, the indium phosphide.
11. the manufacture method with LED matrix of redundant electrode according to claim 9 is characterized in that, in the described step F, forms the described zone of exposing by dry-etching method or wet etching.
12. the manufacture method with LED matrix of redundant electrode according to claim 11, it is characterized in that, described step F also comprises following content: by dry-etching method or wet etching, at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
13. the manufacture method with LED matrix of redundant electrode according to claim 9 is characterized in that: described first electrode and/or described redundant electrode are metal material.
14. LED matrix and the manufacture method thereof with redundant electrode according to claim 9 is characterized in that: described conducting resinl is the Ag conducting resinl.
15. the manufacture method with LED matrix of redundant electrode is characterized in that, described manufacture method with LED matrix of redundant electrode comprises:
Steps A, selection LED first substrate;
Step B, above described first substrate, form first coating;
Step C, above described first coating, form the active region;
Step D, above described active region, form second coating;
Step e, described first substrate of removal;
Step F, below described first coating, engage LED with second substrate of conductivity;
Step G, make arbitrary local formation of described first coating or described second substrate expose the zone;
Step H, above described second coating, form first electrode, and form redundant electrode in arbitrary zone of exposing of described first coating or described second substrate;
Step I, below described second substrate, form second electrode;
Step J, by conducting resinl described second electrode is engaged with second conductor;
Step K, by first lead-in wire described first electrode is engaged with first conductor, going between by second engages described redundant electrode with described second conductor.
16. the manufacture method with LED matrix of redundant electrode according to claim 15 is characterized in that: described first substrate is the light absorption substrate.
17. the manufacture method with LED matrix of redundant electrode according to claim 16 is characterized in that: the material of described first substrate is GaAs.
18. the manufacture method with LED matrix of redundant electrode according to claim 15 is characterized in that: described second substrate is transparent substrates.
19. the manufacture method with LED matrix of redundant electrode according to claim 18 is characterized in that: the material of described second substrate is a kind of in gallium phosphide, carborundum, gallium nitride and the zinc oxide.
20. the manufacture method with LED matrix of redundant electrode according to claim 15 is characterized in that: among the described step G, form the described zone of exposing by dry-etching method or wet etching.
21. the manufacture method with LED matrix of redundant electrode according to claim 20, it is characterized in that, described step G also comprises following content: by dry-etching method or wet etching, at least one side in described conductive board and/or described first coating and/or described active region and/or described second coating forms a plurality of concavo-convex.
22. the manufacture method with LED matrix of redundant electrode according to claim 15 is characterized in that: described first electrode and/or described redundant electrode are metal material.
23. the manufacture method with LED matrix of redundant electrode according to claim 15 is characterized in that: described conducting resinl is the Ag conducting resinl.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080099918A KR100903280B1 (en) | 2008-10-13 | 2008-10-13 | Led assembly having redundancy electrode and fabrication method thereof |
| KR10-2008-0099918 | 2008-10-13 | ||
| KR10-2009-0010379 | 2009-02-10 | ||
| KR1020090010379A KR20100091269A (en) | 2009-02-10 | 2009-02-10 | Led assembly having redundancy electrode and fabrication method thereof |
| PCT/KR2009/005859 WO2010044584A2 (en) | 2008-10-13 | 2009-10-13 | Led assembly having redundancy electrode and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102341923A CN102341923A (en) | 2012-02-01 |
| CN102341923B true CN102341923B (en) | 2013-09-18 |
Family
ID=42107036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980136924.1A Expired - Fee Related CN102341923B (en) | 2008-10-13 | 2009-10-13 | Led assembly having redundancy electrode and fabrication method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102341923B (en) |
| WO (1) | WO2010044584A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114613884A (en) * | 2022-02-22 | 2022-06-10 | 重庆惠科金渝光电科技有限公司 | Display panel and repairing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314069A (en) * | 1999-04-30 | 2001-09-19 | 出光兴产株式会社 | Organic electroluminescent device and method of manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382481B1 (en) * | 2000-06-09 | 2003-05-01 | 엘지전자 주식회사 | White Light Emitting Diode and Fabricating Method for the same |
| JP3831614B2 (en) * | 2001-01-10 | 2006-10-11 | 三洋電機株式会社 | Method for manufacturing light emitting or receiving device |
| JP4254266B2 (en) * | 2003-02-20 | 2009-04-15 | 豊田合成株式会社 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD |
-
2009
- 2009-10-13 WO PCT/KR2009/005859 patent/WO2010044584A2/en active Application Filing
- 2009-10-13 CN CN200980136924.1A patent/CN102341923B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314069A (en) * | 1999-04-30 | 2001-09-19 | 出光兴产株式会社 | Organic electroluminescent device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010044584A3 (en) | 2010-07-22 |
| WO2010044584A2 (en) | 2010-04-22 |
| CN102341923A (en) | 2012-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011129920A (en) | Light emitting element and method of manufacturing the same | |
| CN101783381A (en) | Production method of clad type expansion electrode light-emitting diode | |
| CN102263120A (en) | Semiconductor light-emitting element, light-emitting device, luminaire, display unit, traffic signal lamp unit, and traffic information display unit | |
| JP2013110382A (en) | High voltage ac light emitting diode structure | |
| US20090315050A1 (en) | Semiconductor light emitting device | |
| CN102163665B (en) | Light emitting device and method of manufacturing the same | |
| JP5276680B2 (en) | Light emitting device package, lighting system | |
| CN106981550A (en) | A kind of easily encapsulation easy heat radiation upside-down mounting high voltage LED chip | |
| JP7273280B2 (en) | Light-emitting module and method for manufacturing light-emitting module | |
| JP2009094459A (en) | Light-emitting diode chip and manufacturing method thereof | |
| CN100454587C (en) | Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same | |
| CN101359704A (en) | Light element device and method for manufacturing same | |
| JP4116387B2 (en) | Semiconductor light emitting device | |
| KR100903280B1 (en) | Led assembly having redundancy electrode and fabrication method thereof | |
| KR20090078480A (en) | Semiconductor device | |
| CN104993031B (en) | High pressure flip LED chips and its manufacture method | |
| KR20100091269A (en) | Led assembly having redundancy electrode and fabrication method thereof | |
| TWI517442B (en) | Light emitting diode (led) device and manufacturing method thereof | |
| TWI618268B (en) | Light emitting devive | |
| CN102341923B (en) | Led assembly having redundancy electrode and fabrication method thereof | |
| CN202695523U (en) | Semiconductor luminescent device | |
| CN105720138A (en) | Light emitting diode and manufacturing method therefor | |
| KR100495004B1 (en) | Light emitting diode and method for fabricating thereof | |
| TWI604632B (en) | Light emitting device | |
| TW201203611A (en) | Light emitting device and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CONSTANCE TENCO Free format text: FORMER OWNER: CUI YUNLONG Effective date: 20150205 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150205 Address after: South Korea Gyeonggi Do Shixing City New River Road 68 Street fan 21 Patentee after: Constant C Address before: South Korea Chungnam Karatsu Gunzhenmi scholar in 298 bit 343-861 crown Patentee before: Cui Yunlong |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20201013 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |