CN102341923A - Led assembly having redundancy electrode and fabrication method thereof - Google Patents

Led assembly having redundancy electrode and fabrication method thereof Download PDF

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Publication number
CN102341923A
CN102341923A CN2009801369241A CN200980136924A CN102341923A CN 102341923 A CN102341923 A CN 102341923A CN 2009801369241 A CN2009801369241 A CN 2009801369241A CN 200980136924 A CN200980136924 A CN 200980136924A CN 102341923 A CN102341923 A CN 102341923A
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electrode
coating
substrate
redundant
led matrix
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CN2009801369241A
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CN102341923B (en
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崔云龙
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Constant C
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崔云龙
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Priority claimed from KR1020080099918A external-priority patent/KR100903280B1/en
Priority claimed from KR1020090010379A external-priority patent/KR20100091269A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

The present invention relates to an LED assembly having a redundancy electrode and a fabrication method thereof. The LED assembly having a redundancy electrode according to the present invention, comprises a conductive substrate for LED, a first clad layer formed on the substrate, an active area formed on the first clad layer, a second clad layer formed on the active area, a junction layer formed on the second clad layer, a first electrode formed on the second clad layer or on the junction layer, a second electrode formed beneath the substrate, a redundancy electrode formed in the partially exposed area of one of the substrate and the first clad layer, a first lead wire-bonded to the first electrode, and a second lead bonded to the second electrode by a conductive adhesive, and wire-bonded to the redundancy electrode.

Description

LED matrix and manufacturing approach thereof with redundant electrode
Technical field
The present invention relates to LED matrix and manufacturing approach thereof, especially relate to LED matrix and manufacturing approach thereof with redundant electrode.
Background technology
LED (Light Emitting Diode) is the light-emitting diode that is used for the light radiation semiconductor subassembly, launches the light of different colours such as red, green, blue, Huang, is used in the electronics indicator light of various electronic products and instrument etc. usually.LED has pn knot knot face structure.Pn knot knot face structure adds forward current, makes the electronics in its n zone quicken to flow to the p zone because of electric field.The electronics that flows to the p zone combines with the hole of acceptor level or valence band state again, and according to chip material, and by potential difference energy radiating light, this phenomenon is injection electroluminescence.The representative materials of led chip is GaAs (GaAs), gallium arsenide phosphide (GaAsP), gallium phosphide (GaP), Aluminum gallium arsenide (GaAlAs), carborundum (SiC) etc.
Fig. 1 is the vertical view of the led chip structure of prior art, and Fig. 2 is the cross-sectional structure sketch map of the led chip structure of prior art, and Fig. 3 is the LED matrix syndeton sketch map of prior art.Extremely shown in Figure 3 like Fig. 1; The red LED chips of prior art comprises substrate 101, active region 103, first coating 105, second coating 107, lamination (not shown), first electrode 109 and second electrode 111; Because of the substrate 101 of red LED chips is a conductivity; First electrode 109 engages through lead-in wire 119 with first conductor 117, and the Ag conducting resinl (Paste) 113 that second electrode 111 passes through conducting resinl directly is connected with second conductor 115.Above-mentioned have only an electrode to have the wire-bonded structure, is called 1 integrated structure.LED matrix with prior art of 1 integrated structure, because of a variety of causes, second electrode 111 that is connected by Ag conducting resinl 113 separates with the joint between second conductor 117 easily.When for example LED matrix is mounted to substrate, Ag conducting resinl 113 is dropped, perhaps, Ag conducting resinl 113 is dropped because welding causes the rapid variation of temperature owing to impact.Separating of joint between second electrode 111 and second conductor 117, cause the fatal weakness of LED matrix of technology in the past.
The red LED chips of prior art is according to the order development of its gallium phosphide (GaP)/gallium phosphide (GaP), gallium arsenide phosphide (GaAsP)/GaAs (GaAs), aluminum gallium arsenide (AlGaAs)/GaAs (GaAs), InGaAIP/ GaAs (GaAs).InGaAIP/ GaAs (GaAs) chip wherein, owing to possess high brightness and outstanding reliability, thus be widely used.Fig. 4 is in the led chip of prior art, and the structural representation of InGaAIP/ GaAs (GaAs) chip structure, Fig. 5 are the sketch mapes of InGaAIP/ GaAs (GaAs) chip light emitting state.InGaAIP/ GaAs (GaAs) chip comprises active region 203, first coating 205, and second coating 207 of GaAs (GaAs) substrate 201, InGaAIP material.As shown in Figure 4; GaAs (GaAs) substrate 201 of InGaAIP/ GaAs (GaAs) chip is an opaque material for the light that active layer produces; Absorption is by the light of active region 203 generations of InGaAIP material, and is as shown in Figure 5, causes the emission efficiency of light very low.
In order to strengthen the emission efficiency of light, remove GaAs (GaAs) substrate of light absorption substrate, adopt like gallium phosphide (GaP) substrate to have the method that the substrate of printing opacity function engages.Fig. 6 is the drawing of led chip structure of the replacement substrate of diagram prior art, and Fig. 7 is the sketch map of led chip luminance of the replacement substrate of prior art.InGaAIP/ GaAs (GaAs) chip as shown in Figure 4, remove GaAs (GaAs) substrate after, the substrate 301 that has the printing opacity function like gallium phosphide (GaP) substrate engages with the active region 203 and second coating 207 of first coating 205, InGaAIP material.As shown in Figure 6, the led chip of replacement substrate has the light of substrate 301 transmissions of printing opacity function by active region 203 generations of InGaAIP material like gallium phosphide (GaP) substrate, as shown in Figure 7, causes the emission efficiency of light very high.
Like Fig. 6 and shown in Figure 7, the led chip of the replacement substrate of prior art because of engaging force is not enough, has the substrate 301 of printing opacity function and is easy to generate with joint between second coating 207 and separates like gallium phosphide (GaP) substrate.In addition, the led chip transparent substrates 301 of the replacement substrate of prior art still is a conductive board, to shown in Figure 3, has 1 integrated structure like Fig. 1.In addition, the led chip of the replacement substrate of prior art, because of a variety of causes, second electrode that is connected by the Ag conducting resinl separates with the joint between second conductor easily.As stated, engage between transparent substrates 301 and second coating 207 separate and second electrode and second conductor between combine separate, cause the fatal weakness of LED matrix of the replacement substrate of prior art.
The utility model content
In order to solve above-mentioned existing in prior technology problem; The present invention provides a kind of LED matrix and manufacturing approach thereof with redundant electrode; Through redundant electrode is set on led chip; Cause the joint between electrode and the conductor to separate even make use conducting resinl connection electrode and conductor, the still steady running of this LED matrix.
The technical scheme that the present invention solves the problems of the technologies described above is following: have the LED matrix of redundant electrode, comprising: the LED conductive board; First coating that above said conductive board, forms; The active region that above said first coating, forms; Second coating that above said active region, forms; First electrode that a side forms above said second coating; The lamination that between said second coating and said first electrode, forms; Second electrode that below said conductive board, forms; The redundant electrode that forms on the zone is exposed in arbitrary part in said conductive board or said first coating; Through second conductor that conducting resinl is connected with said second electrode, said second conductor is also through second lead-in wire and said redundant electrode engagement; Through first conductor of said first lead-in wire with said first electrode engagement.
Further, the material of said conductive board is any one material in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP), the indium phosphide (InP).
Further, said conductive board is the replacement substrate.
Further, the material of said conductive board is any one material in gallium phosphide (GaP), carborundum (SiC), gallium nitride (GaN), the zinc oxide (ZnO).
Further, formation is a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating.
Further, said first electrode and/or said redundant electrode are metal material.
Further, said conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: the present invention provides a kind of LED matrix with redundant electrode; Through redundant electrode is set on led chip; Cause the joint between electrode and the conductor to separate even make use conducting resinl connection electrode and conductor, the still steady running of this LED matrix.
Another technical scheme that the present invention solves the problems of the technologies described above is following: have the manufacturing approach of the LED matrix of redundant electrode, comprising:
Steps A, selection LED use conductive board;
Step B, above said conductive board, form first coating;
Step C, above said first coating, form the active region;
Step D, above said active region, form second coating;
Step e, above said second coating, form lamination;
Step F, expose the zone arbitrary local formation of said first coating or said conductive board;
Step G, above said lamination, form first electrode, and form redundant electrode on the zone in said exposing;
Step H, below said conductive board, form second electrode;
Step I, said second electrode is connected with said second conductor through conducting resinl;
Step J, through first lead-in wire said first electrode is engaged with said first conductor, going between through second engages said redundant electrode with said second conductor.
Further, the material of said conductive board is any one material in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP).
Further, in the said step F, form the said zone of exposing through dry-etching method or wet etching.
Further; Said step F also comprises following content: through dry-etching method or wet etching, form a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating.
Further, said first electrode and/or said redundant electrode are metal material.
Further, said conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: the present invention provides a kind of manufacturing approach with LED matrix of redundant electrode; Through redundant electrode is set on led chip; Even make the joint between substrate and the coating separate; Perhaps cause the joint between electrode and the conductor to separate owing to conducting resinl connection electrode and conductor, this LED matrix still can steady running.
The 3rd technical scheme that the present invention solves the problems of the technologies described above is following: have the manufacturing approach of the LED matrix of redundant electrode, comprising: steps A, selection LED use first substrate;
Step B, above said first substrate, form first coating;
Step C, above said first coating, form the active region;
Step D, above said active region, form second coating;
Step e, said first substrate of removal;
Step F, below said first coating, engage second substrate of LED with conductivity;
Step G, make arbitrary local formation of said first coating or said second substrate expose the zone;
Step H, above said second coating, form first electrode, and form redundant electrode on the zone in arbitrary the exposing of said first coating or said second substrate;
Step I, below said second substrate, form second electrode;
Step J, said second electrode is engaged with said second conductor through conducting resinl;
Step K, through first lead-in wire said first electrode is engaged with said first conductor, going between through second engages said redundant electrode with said second conductor.
Further, described first substrate is the light absorption substrate.
Further, the material of said first substrate is GaAs (GaAs).
Further, said second substrate is a transparent substrates.
Further, the material of said second substrate is any one material in gallium phosphide (GaP), carborundum (SiC), gallium nitride (GaN) and the zinc oxide (ZnO).
Further, among the said step G, through forming the said zone of exposing by dry-etching method or wet etching.
Further; Said step G also comprises following content: through in formula etching method or wet etching, form a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating.
Further, said first electrode and/or said redundant electrode are metal material.
Further, said conducting resinl is the metal jelly, is preferably the Ag conducting resinl.
Adopt the beneficial effect of technique scheme to be: the present invention provides a kind of manufacturing approach with LED matrix of redundant electrode; When on led chip, increasing redundant electrode; Make this chip sides have male and fomale(M&F), need not to increase extra engineering, also can strengthen luminous efficiency.
The invention has the beneficial effects as follows: LED matrix and manufacturing approach thereof with redundant electrode are provided, increase redundant electrode, it is cheap, can guarantee high reliability simultaneously.
Description of drawings
Fig. 1 is the vertical view of the led chip structure of prior art;
Fig. 2 is the cross-sectional structure sketch map of the led chip structure of prior art;
Fig. 3 is the structural representation of the LED matrix syndeton of prior art;
Fig. 4 is in the led chip of prior art, the structural representation of InGaAIP/ GaAs (GaAs) chip structure;
Fig. 5 is the sketch map of InGaAIP/ GaAs (GaAs) chip light emitting state;
Fig. 6 is the structural representation of led chip structure of the replacement substrate of prior art;
Fig. 7 is the sketch map of led chip luminance of the replacement substrate of prior art;
Fig. 8 is the cross-sectional structure sketch map of the led chip structure with redundant electrode of the preferred embodiment of the present invention;
Fig. 9 is the vertical view of the led chip structure with redundant electrode of the preferred embodiment of the present invention;
Figure 10 is the structure chart of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention;
Figure 11 is the manufacturing approach flow chart of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 12 is the manufacturing approach flow chart one of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 13 is the manufacturing approach flowchart 2 of the LED matrix with redundant electrode of the preferred embodiment of the present invention;
Figure 14 is the accompanying drawing one of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention,
Figure 15 is the accompanying drawing two of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention;
Figure 16 is the accompanying drawing three of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention;
Figure 17 is the accompanying drawing four of the formation position of the redundant electrode of the explanation of the preferred embodiment of the present invention.
Embodiment
Figure 10 is the structural representation of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention.
A kind of have a redundant electrode led chip; It comprises: conductive board 401, active region 403, first coating (not shown among the figure), second coating 407, first electrode 409, second electrode 411 and redundant electrode 450; Second coating 407 can also comprise lamination (not shown among the figure), realizes the ohmic contact of second coating 407 and first electrode 409 through this lamination.
The material of conductive board 401 can be any in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP), the indium phosphide (InP), and it has conductivity.
Conductive board 401 belows form second electrode 411; The zone of exposing that forms through etching method on first coating is provided with redundant electrode 450; And should redundancy electrode 450 and second electrode 411 with substrate 401 as identical carrier, this redundancy electrode 450 is supplemantary electrodes of second electrode 411.
This redundancy electrode 450 is positioned on first coating, also can be positioned at a side of conductive board 401.
Because it has conductivity the conductive board of the led chip with redundant electrode of the present invention 401, second electrode 411 directly is connected with second conductor 417 through the conducting resinl 413 with conducting function, and this conducting resinl 413 is preferably the Ag conducting resinl.
First electrode 409 side above second coating 407 forms.
First electrode 409 engages through first lead-in wire 419 with first conductor 415.In order to make the led chip steady running with redundant electrode 450 of the present invention, second conductor 417 is preferable with cup-shape.。
Because being formed on first coating substrate 401 alive, exposes on the zone at redundant electrode 450 through the part that etching method forms; Therefore; Even make because conducting resinl 413 connection second electrodes 411 and second conductor 417 cause second electrode 411 to separate or substrate 401 separates with joint between first coating in the joint between second conductor 417, the present invention has the LED matrix of redundant electrode still can steady running.
Redundant electrode 450 engages through second lead-in wire 421 with second conductor 417 and is connected.
Below in conjunction with accompanying drawing, do further bright specifically to embodiments of the invention.
Fig. 8 is the cross-sectional structure sketch map of the led chip structure with redundant electrode of the preferred embodiment of the present invention; Fig. 9 is the vertical view of the led chip structure with redundant electrode of the preferred embodiment of the present invention; Figure 10 is the sketch map of the LED matrix integrated structure with redundant electrode of the preferred embodiment of the present invention.Extremely shown in Figure 17 like Figure 14; For the formation position of redundant electrode is described; The led chip with redundant electrode of the preferred embodiments of the present invention, it comprises: substrate 401, active region 403, first coating 405, second coating 407, first electrode 409, second electrode 411 and redundant electrode 450.Second coating 407 can also comprise lamination (not shown), realizes the ohmic contact of second coating 407 and first electrode 409 through this lamination.The material of substrate 401 is in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP) any one, and it has conductivity.
Substrate 401 is the replacement substrate, and the meaning of replacement substrate is to replace with another substrate to a substrate, such as GaAs (GaAs) substrate is changed to indium phosphide (InP) substrate.Conductive board 401 belows form second electrode 411; On first coating, form to expose redundant electrode 450 is set on the zone through etching method; And should redundancy electrode 450 and second electrode 411 be identical carrier with substrate 401, this redundancy electrode 450 is supplemantary electrodes of second electrode 411.
Because the substrate 401 with LED matrix of redundant electrode of the present invention has conductivity, second electrode 411 directly is connected with second conductor 417 through the conducting resinl 413 with conducting function, and this conducting resinl 413 is preferably the Ag conducting resinl.In order to make the led chip steady running with redundant electrode 450 of the present invention, second conductor 417 is preferable with cup-shape.
First electrode 409 side above second coating 407 forms.First electrode 409 can have multiple shape, and this is known by the insider of technical field under the present invention.First electrode 409 engages through first lead-in wire 419 with first conductor 415 and is connected.
Because being formed on first coating substrate 401 alive, exposes on the zone at redundant electrode 450 through the part that etching method forms; Therefore; Even make because conducting resinl 413 connection second electrodes 411 and second conductor 417 cause second electrode 411 to separate or substrate 401 separates with joint between first coating in the joint between second conductor 417, the present invention has the LED matrix of redundant electrode still can steady running.
In other preferred embodiments of the present invention; Method is exposed in part through utilizing first coating or substrate 401; Make in substrate 401, first coating 405, active region 403 or second coating 407, the arbitrary side of at least one is to have a plurality of concavo-convex male and fomale(M&F)s.Etching engineering when utilize forming redundant electrode 450 makes the side with led chip of redundant electrode of the present invention have male and fomale(M&F), need not to increase extra engineering, also can strengthen luminous efficiency.Redundant electrode 450 can have multiple shape, and this is known by the insider of technical field under the present invention.Redundant electrode 450 is connected through second wire-bonded 421 with second conductor 417.
Figure 11 is the manufacturing approach flow chart of the LED matrix with redundant electrode of the preferred embodiment of the present invention.
Shown in figure 11, in order to make the LED matrix with redundant electrode of the present invention, it may further comprise the steps:
Step 501 provides suitable substrate, substrate can in silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO), gallium phosphide (GaP) and the indium phosphide (InP) any one and have conductivity;
Step 503 forms first coating above substrate;
Step 505 forms the active region of producing light above first coating;
Step 507 forms second coating above the active region;
Step 509; Expose the part of first coating or the part of substrate; Zone passage dry-etching method (particularly RIE) is exposed in the part of first coating or the part of substrate or wet etching is realized, in other preferred embodiments of the present invention, through dry-etching method (particularly RIE) or wet etching in the part of first coating or the part of substrate form the etching of exposing the zone and expose in the engineering process; Can also expose engineering through above-mentioned etching makes substrate, first coating, active region, reaches in second coating; At least have a plurality of concavo-convex male and fomale(M&F)s one side, expose engineering, need not to increase extra engineering through the local etching that utilizes first coating or substrate; Also can make its side become male and fomale(M&F), thereby strengthen the luminous efficiency of LED matrix of the present invention;
Step 511; Above second coating, form first electrode; And the zone of exposing at first coating or substrate forms redundant electrode; Redundant electrode can the side (shown in figure 14) above first coating, on first coating etching certain depth a side (shown in figure 15), a side (shown in figure 16) above the substrate and on substrate a side (shown in figure 17) of etching certain depth form; Even because conducting resinl causes second electrode to separate with joint between second conductor, or substrate separates with joint between first coating, can obtain the electric power that provides of second conductor that goes between connection by second because of redundant electrode; Led chip with redundant electrode of the present invention or device still can steady runnings; First electrode or redundant electrode can have multiple shape, and in addition, first electrode or redundant electrode are that metal material is preferable;
Step 513 is formed for second electrode of ohmic contact below substrate, second electrode is that metal material is preferable;
Step 515, second electrode is connected by the metal jelly with second conductor, and the Ag conducting resinl of preferable alloy jelly makes second electrode that is positioned at the substrate below be connected with second conductor;
Step 517, first electrode and first conductor be by wire-bonded, and redundant electrode and second conductor are by wire-bonded.
Figure 12 and Figure 13 are the manufacturing approach flow charts of the LED matrix with redundant electrode of the preferred embodiment of the present invention.
Like Figure 12 and shown in Figure 13, in order to make the LED matrix with redundant electrode of the present invention, it may further comprise the steps:
Step 601 provides first substrate, and first substrate is the light absorption substrate, like GaAs (GaAs) substrate, and has conductivity;
Step 603 forms first coating above first substrate;
Step 605 forms the active region of producing light above first coating;
Step 607 forms second coating above the active region;
Step 609 is removed first substrate that absorbs the light that is produced by the active region and reduce light emission efficient;
Step 611; Replace first substrate below first coating, to engage with second substrate; Just first substrate is replaced by second substrate, second substrate is preferable like the transparent substrates of gallium phosphide (GaP) substrate, SiC substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, and the first substrate light absorption substrate is replaced by the second substrate transparent substrates; Make substrate no longer absorb the light that produces by the active region, thereby effectively improved light emission efficient;
Step 613; It is to be accomplished by dry-etching method (particularly RIE) or wet etching that the zone is exposed in the part of exposing first coating or second substrate, the part of first coating or the part of substrate, in other preferred embodiments of the present invention; Through dry-etching method (particularly RIE) or wet etching in the part of first coating or the part of substrate form the etching of exposing the zone and expose in the engineering process; Can also expose engineering through above-mentioned etching and make second substrate, first coating, active region, reach in second coating, have a plurality of concavo-convex male and fomale(M&F)s at least one side, simultaneously; The zone is exposed in part through utilizing etching method to form first coating or second substrate; Need not to increase extra engineering, also can make its side become male and fomale(M&F), thereby strengthen the luminous efficiency of LED matrix of the present invention;
Step 615; Above second coating, form first electrode; And form redundant electrode on the zone in exposing of first coating or second substrate; This redundancy electrode the side (shown in figure 14) above first coating, the side (shown in figure 15) of etching certain depth on first coating, a side (shown in figure 16) above second substrate and on second substrate side (shown in figure 17) of etching certain depth form; Even conducting resinl causes second electrode to separate with joint between second conductor or second substrate separates with joint between first coating; Because redundant electrode can obtain the electric power that provided by second conductor that second lead-in wire connects, led chip with redundant electrode therefore of the present invention or device still can steady runnings, and first electrode or redundant electrode can have multiple shape; In addition, first electrode or redundant electrode are that metal material is preferable;
Step 617 is formed for second electrode of ohmic contact below second substrate, second electrode is that metal material is preferable;
Step 619, second electrode are crossed metal-to-metal adhesive with second conductor dbus and are connected, and preferable alloy glue is the Ag conducting resinl, and second electrode that is positioned at the substrate below is connected with second conductor;
Step 621, first electrode and first conductor be by wire-bonded, and redundant electrode and second conductor are by wire-bonded.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and is all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Use possibility on the industry
LED matrix and manufacturing approach thereof with redundant electrode according to the invention; Except first electrode of the formation of a side above second coating or lamination and second electrode that below conductive board, forms; In the said substrate and first coating; Wherein any one part is exposed the zone and is formed redundant electrode, provides cheap and has guaranteed the LED matrix of high reliability.

Claims (23)

1. the LED matrix with redundant electrode is characterized in that, said LED matrix with redundant electrode comprises: conductive board;
First coating that above said conductive board, forms;
The active region that above said first coating, forms;
Second coating that above said active region, forms;
First electrode that a side forms above said second coating;
Second electrode that below said conductive board, forms;
The redundant electrode that forms on the zone is exposed in arbitrary part in said conductive board or said first coating;
Through second conductor that conducting resinl is connected with said second electrode, said second conductor is also through second lead-in wire and said redundant electrode engagement;
Through first conductor of said first lead-in wire with said first electrode engagement.
2. according to the described a kind of LED matrix with redundant electrode of claim 1, it is characterized in that: the material of said conductive board is a kind of in silicon, carborundum, gallium nitride, GaAs, zinc oxide, gallium phosphide, the indium phosphide.
3. according to the described LED matrix with redundant electrode of claim 1, it is characterized in that: said conductive board is the replacement substrate.
4. according to the described LED matrix with redundant electrode of claim 3, it is characterized in that: the material of said conductive board is a kind of in gallium phosphide, carborundum, gallium nitride, the zinc oxide.
5. according to the described LED matrix of claim 1, it is characterized in that: form a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating with redundant electrode.
6. according to the described LED matrix with redundant electrode of claim 1, it is characterized in that: said first electrode and/or said redundant electrode are metal material.
7. according to the described LED matrix with redundant electrode of claim 1, it is characterized in that: said conducting resinl is the Ag conducting resinl.
8. according to each described LED matrix with redundant electrode in the claim 1 to 7, it is characterized in that: said LED matrix with redundant electrode also comprises: the lamination that between said second coating and said first electrode, forms.
9. have the manufacturing approach of the LED matrix of redundant electrode, it is characterized in that, said manufacturing approach with LED matrix of redundant electrode comprises:
Steps A, selection LED use conductive board;
Step B, above said conductive board, form first coating;
Step C, above said first coating, form the active region;
Step D, above said active region, form second coating;
Step e, above said second coating, form lamination;
Step F, expose the zone arbitrary local formation of said first coating or said conductive board;
Step G, above said lamination, form first electrode, and form redundant electrode on the zone in said exposing;
Step H, below said conductive board, form second electrode;
Step I, said second electrode is connected with said second conductor through conducting resinl;
Step J, through first lead-in wire said first electrode is engaged with said first conductor, going between through second engages said redundant electrode with said second conductor.
10. according to the described manufacturing approach of claim 9, it is characterized in that the material of said conductive board is a kind of in silicon, carborundum, gallium nitride, GaAs, zinc oxide, gallium phosphide, the indium phosphide with LED matrix of redundant electrode.
11. according to the described manufacturing approach of claim 9, it is characterized in that, in the said step F, form the said zone of exposing through dry-etching method or wet etching with LED matrix of redundant electrode.
12. according to the described manufacturing approach of claim 11 with LED matrix of redundant electrode; It is characterized in that; Said step F also comprises following content: through dry-etching method or wet etching, form a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating.
13. according to the described manufacturing approach with LED matrix of redundant electrode of claim 9, it is characterized in that: said first electrode and/or said redundant electrode are metal material.
14. according to described LED matrix and the manufacturing approach thereof with redundant electrode of claim 9, it is characterized in that: said conducting resinl is the Ag conducting resinl.
15. the manufacturing approach with LED matrix of redundant electrode is characterized in that, said manufacturing approach with LED matrix of redundant electrode comprises:
Steps A, selection LED use first substrate;
Step B, above said first substrate, form first coating;
Step C, above said first coating, form the active region;
Step D, above said active region, form second coating;
Step e, said first substrate of removal;
Step F, below said first coating, engage second substrate of LED with conductivity;
Step G, make arbitrary local formation of said first coating or said second substrate expose the zone;
Step H, above said second coating, form first electrode, and form redundant electrode on the zone in arbitrary the exposing of said first coating or said second substrate;
Step I, below said second substrate, form second electrode;
Step J, said second electrode is engaged with said second conductor through conducting resinl;
Step K, through first lead-in wire said first electrode is engaged with said first conductor, going between through second engages said redundant electrode with said second conductor.
16. according to the described manufacturing approach with LED matrix of redundant electrode of claim 15, it is characterized in that: described first substrate is the light absorption substrate.
17. according to the described manufacturing approach with LED matrix of redundant electrode of claim 16, it is characterized in that: the material of said first substrate is a GaAs.
18. according to the described manufacturing approach with LED matrix of redundant electrode of claim 15, it is characterized in that: said second substrate is a transparent substrates.
19. according to the described manufacturing approach with LED matrix of redundant electrode of claim 18, it is characterized in that: the material of said second substrate is a kind of in gallium phosphide, carborundum, gallium nitride and the zinc oxide.
20., it is characterized in that: among the said step G, form the said zone of exposing through dry-etching method or wet etching according to the described manufacturing approach of claim 15 with LED matrix of redundant electrode.
21. according to the described manufacturing approach of claim 20 with LED matrix of redundant electrode; It is characterized in that; Said step G also comprises following content: through dry-etching method or wet etching, form a plurality of concavo-convex at least one side in said conductive board and/or said first coating and/or said active region and/or said second coating.
22. the manufacturing approach with LED matrix of redundant electrode according to claim 15 is characterized in that: said first electrode and/or said redundant electrode are metal material.
23. the manufacturing approach with LED matrix of redundant electrode according to claim 15 is characterized in that: said conducting resinl is the Ag conducting resinl.
CN200980136924.1A 2008-10-13 2009-10-13 Led assembly having redundancy electrode and fabrication method thereof Expired - Fee Related CN102341923B (en)

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KR1020080099918A KR100903280B1 (en) 2008-10-13 2008-10-13 Led assembly having redundancy electrode and fabrication method thereof
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KR10-2009-0010379 2009-02-10
KR1020090010379A KR20100091269A (en) 2009-02-10 2009-02-10 Led assembly having redundancy electrode and fabrication method thereof
PCT/KR2009/005859 WO2010044584A2 (en) 2008-10-13 2009-10-13 Led assembly having redundancy electrode and fabrication method thereof

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Citations (4)

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CN1314069A (en) * 1999-04-30 2001-09-19 出光兴产株式会社 Organic electroluminescent device and method of manufacturing the same
JP2002208735A (en) * 2001-01-10 2002-07-26 Sanyo Electric Co Ltd Light emitting or receiving device
KR100382481B1 (en) * 2000-06-09 2003-05-01 엘지전자 주식회사 White Light Emitting Diode and Fabricating Method for the same
KR100710102B1 (en) * 2003-02-20 2007-04-23 도요다 고세이 가부시키가이샤 Light emitting apparatus

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Publication number Priority date Publication date Assignee Title
CN1314069A (en) * 1999-04-30 2001-09-19 出光兴产株式会社 Organic electroluminescent device and method of manufacturing the same
KR100382481B1 (en) * 2000-06-09 2003-05-01 엘지전자 주식회사 White Light Emitting Diode and Fabricating Method for the same
JP2002208735A (en) * 2001-01-10 2002-07-26 Sanyo Electric Co Ltd Light emitting or receiving device
KR100710102B1 (en) * 2003-02-20 2007-04-23 도요다 고세이 가부시키가이샤 Light emitting apparatus

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