CN103872206B - The manufacturing method of formation light emitting device and its made light emitting device - Google Patents
The manufacturing method of formation light emitting device and its made light emitting device Download PDFInfo
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- CN103872206B CN103872206B CN201210545472.6A CN201210545472A CN103872206B CN 103872206 B CN103872206 B CN 103872206B CN 201210545472 A CN201210545472 A CN 201210545472A CN 103872206 B CN103872206 B CN 103872206B
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- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The present invention discloses a kind of manufacturing method for forming light emitting device and its made light emitting device.The light emitting device includes: substrate；Light emitting structure is formed on substrate, has first area and second area；Barrier layer is formed on first area, and barrier layer has a lower surface and one side wall；And transparency conducting layer, it is formed in the side wall of barrier layer and the second area of light emitting structure；Wherein, the side wall of barrier layer and the angle of lower surface are between 10 ° -70 °；Wherein, the transparency conducting layer on the side wall of barrier layer with a thickness of t1, transparency conducting layer on the second area of light emitting structure with a thickness of t2, wherein the ratio of the difference of t1 and t2 and t1 are not more than 10%.
Description
Technical field
The present invention relates to a kind of manufacturing methods for forming light emitting device, more particularly to a kind of side for etching a protective layer
Method.
Background technique
Light-emitting diode (Light Emitting Diode in solid-state light emitting element；LED) have low power consumption,
Lower calorific value, operation lifetime length, impact resistance, small in size, reaction speed be fast and the good light such as the coloured light of capable of emitting wavelength stabilization
Electrical characteristics, therefore it is commonly applied to the fields such as household electrical appliances, the indicator light of instrument and photovoltaic.
The manufacturing method for generally forming light-emitting diode includes many yellow light manufacture crafts, and each yellow light makes work
Skill all includes complicated step.It is still an important subject under discussion that how this, which shortens manufacturing process steps to reduce cost at present,.
In addition, the above light emitting diode can form a light emitting device further combined with a carrier (sub-mount), example
Such as light bulb.The light emitting device includes a secondary carrier with an at least circuit；An at least solder (solder) is located at above-mentioned time
On carrier, above-mentioned light emitting diode is fixed on time carrier and is made on the substrate and time carrier of light emitting diode by this solder
Circuit formed electrical connection；And an electric connection structure, with the electricity being electrically connected on the electronic pads and time carrier of light emitting diode
Road；Wherein, above-mentioned secondary carrier can be lead frame (lead frame) or large scale inlays substrate (mounting
Substrate), to facilitate the circuit of light emitting device to plan and improve its heat dissipation effect.
Summary of the invention
To solve the above problems, the present invention provides a kind of manufacturing method for forming light emitting device, include: forming a light-emitting junction
For structure on a substrate, light emitting structure has an active layer, a upper surface and one side wall；A protective layer is formed in light emitting structure
On the upper surface and the side wall, protective layer has a first thickness；Etch protection layer makes protective layer that there is a second thickness to be less than
First thickness；And patterned protective layer.
To solve the above problems, the present invention more provides a kind of light emitting device, include: the light emitting device includes: substrate；It shines
Structure is formed on substrate, has first area and second area；Barrier layer is formed on first area, and barrier layer has one
Lower surface and one side wall；And transparency conducting layer, it is formed in the side wall of barrier layer and the second area of light emitting structure；Wherein,
The side wall of barrier layer and the angle of lower surface are between 10 ° -70 °；Wherein, the transparency conducting layer on the side wall of barrier layer with a thickness of
T1, transparency conducting layer on the second area of light emitting structure with a thickness of t2, wherein the difference of t1 and t2 and the ratio of t1 are little
In 10%.
Detailed description of the invention
Figure 1A-Fig. 1 H is the manufacturing method cross-sectional view of one light emitting device of formation of the invention；
Fig. 2A is to be formed by a light emitting device according to the manufacturing method of the present invention；
Fig. 2A of Fig. 2 B is partial enlarged view；
Fig. 3 A- Fig. 3 C shows the top view of light emitting device of the invention；
Fig. 4 shows the exploded view of a light bulb of the invention.
Main element symbol description
100,100 ', 100 ": light emitting device
10a, 10b: substrate
1000: shine laminated construction
101: sloped sidewall
102: upper surface
104: the first sides
105: the second sides
106: third side
107: the four sides
11: light emitting structure
111: the first type semiconductor layers
112: active layer
113: the second type semiconductor layers
1131: first area
1132: second area
12: protective layer
120: protective layer
121: barrier layer
1211: lower surface
1212: side wall
1213: the first elongated areas
1213 ': elongated area
1214: the second elongated areas
1215,1215 ': electrode zone
13: transparency conducting layer
14,14 ', 14 ": first electrode
141,141 ', 141 ": first electrode pad
142, the 142 ', 142 ": the first extending electrode
15,15 ', 15 ": second electrode
151,151 ', 151 ": second electrode pad
152: the second extending electrodes
16: groove
21: lampshade
22: lens
23: carrier
24: light emitting module
25: support plate
26: heat-sink unit
27: connector
28: circuit unit
30: light bulb
Specific embodiment
Following embodiment will be along with Detailed description of the invention idea of the invention, in attached drawing or explanation, similar or identical portion
It point is using identical label, and in the accompanying drawings, the shape or thickness of element can be expanded or shunk.Need it is specifically intended that
The element for not being painted or describing in figure can be form known to the personage for being familiar with this technology.
Figure 1A-Fig. 1 G is the manufacturing method schematic diagram of one light emitting device 100 of formation of the invention.
As shown in Figure 1A, a substrate 10a is provided, and forms a light emitting structure 11 on substrate 10a.In this embodiment,
Substrate 10a is a sapphire wafer substrates.Light emitting structure 11 sequentially includes one first type semiconductor layer 111；One active layer 112；
And one second type semiconductor layer 113 be formed on substrate 10a.First type semiconductor layer 111 and the second type semiconductor layer 113 are for example
For clad (cladding layer) or limiting layer (confinement layer), electronics, hole can be provided respectively, make electricity
Son, hole are combined in active layer 112 to shine.As shown in Figure 1B, etch activity layer 112 and the second type semiconductor layer 113 with
Form multiple luminous laminated construction 1000.Multiple luminous laminated construction 1000 be separated by a distance be arranged on substrate 10a and
Expose the first type semiconductor layer of part 111.In addition, the light emitting device 100 in the present embodiment is a horizontal configuration, but can also
For the design of a Vertical Structure or other different form structures.As shown in Figure 1 C, a protective layer 12 is formed to cover the first type
Semiconductor layer 111, active layer 112, the second type semiconductor layer 113 and substrate 10a.Protective layer 12 has a first thickness (t1) simultaneously
With in the function of next etching step protection light emitting structure 11.In the present embodiment, first thickness (t1) beAs shown in figure iD, using a laser cutting substrate 10 to form a groove 16 in substrate 10, wherein
Groove 16 has the section of triangle.It is noted that can generate some by-products when using laser cutting and be piled up in groove 16
It is interior, an etching step need to be carried out to remove by-product.It so, also can etch protection layer 12 while etch byproducts.Therefore,
As referring to figure 1E, after etching step, protective layer 120 has one to be less than first thickness (t1) second thickness (t2), second thickness
BetweenFirst thickness (t1) and second thickness (t2) difference (t1-t2) be greater thanIn the present embodiment, erosion
The method for carving by-product (and etch protection layer 12 simultaneously) is comprising with an acid solution wet etching by-product and protective layer 12, acid
Property solution be include phosphoric acid (H3PO4) and sulfuric acid (H2SO4) mixed solution, wherein sulfuric acid (H2SiO4) and phosphoric acid (H3PO4) it is dense
Degree is than about three to one.In other embodiments, phosphoric acid solution is also can be selected in acid solution.As shown in fig. 1F, by protective layer 120
Patterning is to form a patterning protective layer 121.In this present embodiment, patterning protective layer 121 also can be used as an electric current barrier
Layer 121.As shown in Figure 1 G, a transparency conducting layer 13 is formed on barrier layer 121 and the second type semiconductor layer 113.Such as Fig. 1 H institute
Show, formed a first electrode 14 on transparency conducting layer 13 and correspond to barrier layer 121 position on and formed one second electricity
Pole 15 is in the first type semiconductor layer 111.Protective layer 121 or barrier layer 121 are an insulating materials and have one for visible light
Penetrance greater than 90%.In addition, there is barrier layer 121 resistivity to be greater than 1014Ω.cm.Barrier layer 121 may include silica
(SiO2), silicon nitride (SiNx) or titanium dioxide (TiO2) etc. materials.Then, 16 the laminated construction 1000 that shines is cleaved along groove
To form multiple light emitting devices 100.
Fig. 2A is according to light emitting device 100 made by Figure 1A-Fig. 1 H of the present invention.Fig. 2 B is the partial enlarged view of Fig. 2A.
Light emitting structure 11 is formed on substrate 10b.Light emitting structure 11 sequentially includes one first type semiconductor layer 111；One active layer 112；
And one second type semiconductor layer 113.Second type semiconductor layer 113 has a first area 1131 and a second area 1132.Barrier
Parietal layer 121 is formed on first area 1131, and has a lower surface 1211 and one side wall 1212.Wherein, side wall 1212 is opposite
It is tilted in lower surface 1211 and with the angle of lower surface 1211 (Θ) between 10 ° -70 °.Transparency conducting layer 13 is formed in barrier layer
121 side wall 1212 and have a third thickness (t3)；Transparency conducting layer 13 is also formed in the second of the second type semiconductor layer 113
Region 1132 and have one the 4th thickness (t4).Because the angle (Θ) of side wall 1212 and lower surface 1211 is less than 70 °, electrically conducting transparent
Layer can be evenly covered on the side wall 1212 of barrier layer 121 and the second area 1132 of the second type semiconductor layer 113.This implementation
In example, transparency conducting layer 13 is formed in the thickness of the side wall 1212 of barrier layer 121 and is formed in the of the second type semiconductor layer 113
Difference (the t of the thickness on two surfaces 11323-t4) with transparency conducting layer 13 be formed in barrier layer 121 side wall 1212 thickness (t3)
Ratio ((t3-t4)/t3) it is not more than 10%.In addition, in laser step, because in the groove 16 for forming a triangular form in substrate 10a
(D referring to Fig.1), therefore when cleaving the laminated construction 1000 that shines to form light emitting device 100, substrate 10b can have an inclination
Side wall 101.Sloped sidewall 101 is relative to a upper surface 102 inclination of substrate 10b and the upper table of sloped sidewall 101 and substrate 10b
The angle in face 102 is greater than 90 °.In addition, sloped sidewall 101 after being cut by laser, can be etched again with acid solution to remove laser
Cutting is formed by by-product, therefore sloped sidewall 101 is made to have a rough surface.
Fig. 3 A- Fig. 3 C is the top view of light emitting device 100,100 ', 100 " of the invention.Light emitting device 100,100 ',
100 " have a rectangular shape and include one first at 104, one second 105, one third at 106, Ji Yi tetra-
107.As shown in Figure 3A, light emitting device 100 includes first electrode 14, and close to the first side 104 and to be formed in transparency conducting layer 13 right
On the position for answering barrier layer 121.In the present embodiment, first electrode 14 and barrier layer 121 have same shape.First
Electrode 14 includes that a first electrode pad 141 and multiple first extending electrodes 142 extend from first electrode pad 141.Barrier layer 121
Area is greater than the area of electronic pads 141 and extending electrode 142.Light emitting device 100 further includes a second electrode 15, close to relative to
First in the second of 104 105.Second electrode 15 includes a second electrode pad 151 and one second extending electrode 152 to the first side
104 extend, and the first extending electrode 142 extends from first electrode pad 141 toward the direction of second electrode pad 151 (toward the second side 105
Direction).In addition, first electrode pad 141 can also be placed in nearly first while 104 with third while 106 folded by corner, second electrode pad
151 can also be placed in nearly second at 105 and the 4th 107 folded by corner, and the second extending electrode 152 is to first electrode pad 141
Extend.In another embodiment, as shown in Figure 3B, light emitting device 100 ' includes a first electrode 14 ' and a second electrode 15 '.
First electrode 14 ' includes a first electrode pad 141 ' and one first extending electrode 142 '.Second electrode 15 ' includes a second electrode
Pad 151 '.Direction of first extending electrode 142 ' from first electrode pad 141 ' toward second electrode pad 151 ' extends (toward the second side 105
Direction).In addition, barrier layer 121 includes an electrode zone 1215, multiple first elongated areas 1213 and multiple second extensions
Region 1214.The electrode zone 1215 of barrier layer 121 is formed in the region corresponding to first electrode 14 ' and has and first electrode
14 ' same shapes but area are greater than first electrode 14 '.From electrode zone 1215, (first is electric for first elongated area 1213
Polar cushion 141 ' and the first extending electrode 142 ') extend to side (third is at 106 and the 4th 107).In the present embodiment, four
Two elongated areas 1214 from electrode zone 1215 (first electrode pad 141 ' and the first extending electrode 142 ') forward (the first side 104)
And (the second side) 105 extends backward.The 1214 not formed first electrode in top of first elongated area 1213 and the second elongated area
14’。
In another embodiment, as shown in Figure 3 C, light emitting device 100 " includes first electrode 14 " and a second electrode 15 ".
First electrode 14 " includes a first electrode pad 141 " and one first extending electrode 142 ".Second electrode 15 " includes a second electrode
Pad 151 ".Direction of first extending electrode 142 " from first electrode pad 141 " toward second electrode pad 151 " extends (toward the second side 105
Direction).In addition, barrier layer 121 includes an electrode zone 1215 ' and multiple elongated areas 1213 '.The electrode of barrier layer 121
Region 1215 ' is formed in the region corresponding to first electrode 14 " and has and 14 " same shape of first electrode but face
Product is greater than first electrode 14 ".From electrode zone 1215 ', (first electrode pad 141 ' and the first extension are electric for multiple elongated areas 1213 '
Pole 142 ') extend in about 45 degree of angular four sides (104,105,106,107).Not formed first electricity in 1213 ' top of elongated area
Pole 14 ".
First type semiconductor layer can be n-type semiconductor layer and the second type semiconductor layer can be p-type semiconductor, and the first type is partly led
Body layer and the second type semiconductor layer and include in constituent material group of AlGaAs, AlGaInP, AlInP and InGaP institute
One of a kind of material or constituent material group of AlInGaN, InGaN, AlGaN and GaN institute material；Selectively, the first type
Semiconductor layer can be p-type semiconductor layer and the second type semiconductor layer can be n-type semiconductor；Active layer may include being selected from
One of constituent material group of AlGaAs, AlInGaP, InGaP and AlInP institute material or AlInGaN, InGaN, AlGaN and
One of constituent material group, GaN institute material.Active layer structure can be single heterojunction structure (single
heterostructure；SH), double-heterostructure (double heterostructure；DH), bilateral double-heterostructure
(double-side double heterostructure；) or multi-layer quantum well (multi-quantum well DDH；
MQW).Substrate then includes selected from GaAs (GaAs), gallium phosphide (GaP), germanium (Ge), sapphire, glass, diamond, silicon carbide
(SiC), at least one of silicon, gallium nitride (GaN) and zinc oxide (ZnO) institute constituent material group material or other alternative
Material replaces it.
Fig. 4 is the exploded view of a light bulb 30 of the invention.Light bulb 30 includes a lampshade 21, a lens 22, a light emitting module
24, a support plate 25, a heat dissipation element 26, a connection piece 27 and a circuit unit 28.Light emitting module 24 includes a carrier 23 and more
A light emitting device.Light emitting device can be any of above mentioned light emitting device 100 (100 ', 100 ").As shown in figure 4, for example,
12 light emitting devices are located on carrier 23, wherein including six red light-emitting devices and six blue light emitting device rows interlaced with each other
It arranges and is electrically connected to each other (can be serial or parallel connection).Blue light emitting device includes that a fluorescent powder is placed on it to be shone with converting blue light
The light that device is issued.The light that blue light emitting device is issued and the light of conversion are mixed to form a white light, and feux rouges hair of arranging in pairs or groups
Light bulb 30 is set to issue the warm white of color temperature 2400-3000K after electro-optical device.
Each embodiment cited by the present invention is only to illustrate the present invention, is not used to limit the scope of the present invention.It is any
People's any modification apparent easy to know made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (8)
1. a kind of light emitting device, includes:
Substrate；
Light emitting structure is formed on the substrate, has first area and second area；
Barrier layer is formed on the first area, which has a lower surface and one side wall；And
Transparency conducting layer is formed in the side wall of the barrier layer and the second area of the light emitting structure；
Wherein, the side wall and the angle of the lower surface are between 10 ° -70 °；
Wherein, the transparency conducting layer on the side wall of the barrier layer with a thickness of t1, on the second area of the light emitting structure
The transparency conducting layer with a thickness of t2, wherein the ratio of the difference of t1 and t2 and t1 are not more than 10%.
2. light emitting device as described in claim 1, wherein the thickness of the barrier layer is greater thanAnd it is less than
3. light emitting device as described in claim 1 includes also a first electrode, is formed in the transparency conducting layer and corresponds to the barrier
On the position of layer, wherein the first electrode and the barrier layer have same shape.
4. light emitting device as claimed in claim 3, wherein the first electrode includes first electrode pad and extending electrode；The hair
Electro-optical device also includes second electrode, and wherein the second electrode includes second electrode pad；The extending electrode is past from the first electrode pad
The direction of second electrode pad extends.
5. light emitting device as described in claim 1 includes also electrode, is formed on the transparency conducting layer；The wherein electrode packet
Containing electronic pads and extending electrode；Wherein, which includes four side；And wherein, which includes electrode zone pair
It should extend in the position of the electrode and elongated area from the electrode zone to the four side.
6. light emitting device as described in claim 1, which includes an insulating materials and there is a resistivity to be greater than 1014
Ω·cm。
7. light emitting device as described in claim 1, wherein the substrate has a sloped sidewall.
8. light emitting device as claimed in claim 7, wherein the sloped sidewall has a rough surface.
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| CN201210545472.6A CN103872206B (en) | 2012-12-14 | 2012-12-14 | The manufacturing method of formation light emitting device and its made light emitting device |
| CN201910572937.9A CN110289346B (en) | 2012-12-14 | 2012-12-14 | Method for forming light-emitting device and light-emitting device manufactured by same |
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| CN201210545472.6A CN103872206B (en) | 2012-12-14 | 2012-12-14 | The manufacturing method of formation light emitting device and its made light emitting device |
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| CN111430511A (en) * | 2014-07-25 | 2020-07-17 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN104319323B (en) * | 2014-10-29 | 2018-01-12 | 华灿光电股份有限公司 | Light-emitting diode chip for backlight unit preparation method |
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| JP2000216494A (en) * | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | Semiconductor light emitting element and its manufacture |
| JP4366234B2 (en) * | 2004-04-20 | 2009-11-18 | 株式会社ソニー・コンピュータエンタテインメント | Recording device |
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| Publication number | Publication date |
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| CN103872206A (en) | 2014-06-18 |
| CN110289346B (en) | 2021-11-30 |
| CN110289346A (en) | 2019-09-27 |
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