JP2000216494A - Semiconductor light emitting element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element whose film thickness can be controlled with high accuracy and to obtain its manufacturing method. SOLUTION: A low-temperature-growth buffer layer 2, a GaN layer 3, an n-GaN layer 4, a crack preventive layer 5, an n-clad layer 6, an active layer 7, a first p-clad layer 8 and a second p-clad layer 9 are epitaxially grown sequentially on a sapphire substrate 1. The first p-clad layer 8 is composed of Al0.1Ga0.9 N. The second p-clad layer 9 is composed of Al0.2Ga0.8N0.9P0.1. By excluding a stripe-shaped region on the first p-clad layer 8, the second p-clad layer 9 is dry-etched by an RIBE method. At this time, since the etch rate of the second p-clad layer 9 is large as compared with that of the first p-clad layer 8, an etching operation can be stopped at the first p-clad layer 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a group III-V nitride semiconductor such as BN (boron nitride), GaN (gallium nitride), AlN (aluminum nitride) or InN (indium nitride) or a mixed crystal thereof. Hereinafter, the present invention relates to a semiconductor light-emitting device comprising a nitride-based semiconductor) and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, GaAs-based semiconductor light emitting devices have been used as semiconductor light emitting devices such as semiconductor laser devices and light emitting diodes that emit infrared or red light.

FIGS. 8, 9 and 10 are schematic process sectional views showing a method for manufacturing a conventional GaAs semiconductor laser device having a ridge stripe structure. A method of manufacturing a conventional GaAs-based semiconductor laser device will be described with reference to FIGS.

[0004] First, as shown in FIG.
1, an n-buffer layer 62 of n-GaAs, n
N-cladding layer 63 made of AlGaAs, AlGa
Active layer 64 made of As, p made of p-AlGaAs
A first cladding layer 65, an etching stop layer 66 made of p-AlGaAs, and a p-layer made of p-AlGaAs
The second cladding layer 67 is epitaxially grown in order.
In this case, the etching rate of the etching stop layer 66 is p
The composition of the etch stop layer 66 is selected to be less than the etch rate of the second cladding layer 67;

Next, as shown in FIG. 9, the p-second cladding layer 67 is wet-etched using an acid or the like except for the stripe-shaped region. As a result, a striped p-second cladding layer 67 is formed on the etching stop layer 66. At this time, in the etching stop layer 66, p
-Since the etching rate is lower than that of the second cladding layer 67, the etching stops at the etching stop layer 66.

Further, as shown in FIG. 10, an n-type current blocking layer 68 made of n-GaAs is formed on the etching stop layer 66, and the n-type current blocking layer 68 and the p-type current blocking layer 68 are formed.
-On the second cladding layer 67, p-
The contact layer 69 is formed. Finally, a p-electrode 70 is formed on the p-contact layer 69, and an n-electrode 71 is formed on the back surface of the GaAs substrate 61.

In the above-described semiconductor laser device, if the thickness of the p-first cladding layer 65 is too large, light confinement is weakened. Conversely, if the thickness of the p-first cladding layer 65 is too small, the end face of the resonator due to concentration of light tends to be broken. Therefore, it is necessary to control the thickness of the p-first cladding layer 65 with high accuracy.

In the above manufacturing method, the p-second cladding layer 67 is formed by using the etching stopper layer 66.
The etching is prevented from progressing to the p-first cladding layer 65 during the etching. As a result, p-second
Even if the thickness of the cladding layer 67 varies, the p-first
While maintaining the thickness of the cladding layer 65, the p-second cladding layer 6
7 can be reliably removed.

In recent years, GaN-based semiconductor light emitting devices have been put into practical use as semiconductor light emitting devices such as semiconductor laser devices and light emitting diodes that emit blue or purple light. InG
GaN-based semiconductors such as aN and AlGaN are all chemically stable, and it is difficult to perform wet etching. Therefore, when etching a GaN-based semiconductor, dry etching such as RIBE (reactive ion beam etching) is usually used.

[0010]

When an etching stop layer is to be used in the production of a GaN-based semiconductor light emitting device, the material of the etching stop layer is more etched than that of other GaN-based semiconductor layers. It is necessary to select a material that is difficult to perform. Moreover, this etching stop layer needs to be capable of crystal growth while being lattice-matched with another GaN-based semiconductor layer. It is difficult to find a material that satisfies such conditions as a material for the etching stop layer.

An object of the present invention is to provide a nitride-based semiconductor light-emitting device capable of controlling the film thickness with high precision and a method of manufacturing the same.

[0012]

The semiconductor light emitting device according to the first invention is a semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium. hand,
A second layer having a stripe shape is formed on the first layer, and a second layer is formed.
A current blocking layer is formed on the first layer on both sides of the first layer, and the second layer is formed of a nitride-based semiconductor having a higher etching rate than the first layer.

In the semiconductor light emitting device according to the present invention,
Since the second layer is formed of a nitride-based semiconductor having an etching rate higher than that of the first layer, the etching rate of the first layer becomes very slow when etching the second layer, Alternatively, the etching stops. Therefore, it is possible to reliably remove a predetermined portion of the second layer while maintaining the thickness of the first layer. As a result, it is possible to form a high-accuracy ridge, thereby stabilizing characteristics and improving yield.

A semiconductor light emitting device according to a second invention is a semiconductor light emitting device formed of a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a first cladding is formed on an active layer. A second cladding layer is formed on the first cladding layer, a current blocking layer is formed on the first cladding layer on both sides of the second cladding layer, and a second cladding layer is formed on the first cladding layer. The layer is formed of a nitride-based semiconductor having a higher etching rate than the first cladding layer.

In the semiconductor light emitting device according to the present invention,
Since the second cladding layer is formed of a nitride-based semiconductor having an etching rate higher than that of the first cladding layer, the etching rate of the first cladding layer is very low when etching the second cladding layer. Or the etching stops. Therefore, it is possible to reliably remove a predetermined portion of the second clad layer while maintaining the thickness of the first clad layer. As a result, it is possible to form a high-accuracy ridge, thereby stabilizing characteristics and improving yield.

The second cladding layer is made of a nitride-based semiconductor having a composition in which part of nitrogen in a nitride-based semiconductor containing at least one of gallium, aluminum, and indium is replaced by a group V element other than nitrogen. It may be formed. In this case, by partially replacing nitrogen in the nitride-based semiconductor with a group V element other than nitrogen, the etching rate of the second cladding layer is higher than that of the first cladding layer, and Can be lattice-matched to the first cladding layer.

[0017] The second cladding layer may be formed of indium aluminum nitrogen. Also in this case, the second
The etching speed of the first cladding layer becomes higher than that of the first cladding layer, and the second cladding layer can be lattice-matched to the first cladding layer.

A semiconductor light emitting device according to a third aspect of the present invention is a semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum, and indium. A current blocking layer having an opening is formed, a second layer is formed on the first layer and on the current blocking layer in the opening, and the current blocking layer has a higher etching rate than the first layer. It is formed of a nitride semiconductor.

In the semiconductor light emitting device according to the present invention,
Since the current blocking layer is formed of a nitride-based semiconductor having a higher etching rate than the first layer, the etching rate of the first layer becomes very slow when the current blocking layer is etched, or Stops. Therefore, it is possible to reliably remove a predetermined portion of the current blocking layer while maintaining the thickness of the first layer. As a result, the characteristics are stabilized and the yield is improved.

A semiconductor light emitting device according to a fourth aspect of the present invention is a semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a first clad is formed on an active layer. A layer is formed, a current blocking layer having a stripe-shaped opening is formed on the first cladding layer, a second cladding layer is formed on the first cladding layer and on the current blocking layer in the opening, The current blocking layer is formed of a nitride-based semiconductor having a higher etching rate than the first cladding layer.

In the semiconductor light emitting device according to the present invention,
Since the current blocking layer is formed of a nitride-based semiconductor having a higher etching rate than the first cladding layer, the etching rate of the second cladding layer becomes very slow when etching the current blocking layer, Alternatively, the etching stops. Therefore, it is possible to reliably remove a predetermined portion of the current blocking layer while maintaining the thickness of the first cladding layer. As a result, the characteristics are stabilized and the yield is improved.

The current blocking layer is made of a nitride-based semiconductor having a composition in which part of nitrogen in a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium is replaced by a group V element other than nitrogen. It may be formed. In this case, a part of nitrogen is replaced by a group V element other than nitrogen, so that the etching rate of the current blocking layer is reduced to the first rate.
And the current blocking layer can be lattice-matched to the first cladding layer.

The current blocking layer may be formed of indium aluminum nitrogen. Also in this case, the etching speed of the current blocking layer is higher than that of the first cladding layer, and the current blocking layer can be lattice-matched to the first cladding layer.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium. Forming a second layer on the first layer, and patterning the second layer in a striped shape by etching, so that the material of the second layer has a higher etching rate than the first layer. Using a nitride-based semiconductor.

In the manufacturing method according to the present invention, since the nitride-based semiconductor having a higher etching rate than the first layer is used as the material of the second layer, the first layer is etched when the second layer is etched. The etching rate becomes very slow or the etching is stopped in the layer of. Therefore, the first
The predetermined portion of the second layer can be reliably removed while maintaining the thickness of the second layer. As a result, the thickness of the first layer can be controlled with high accuracy, and the characteristics can be stabilized and the yield can be improved.

In particular, the first layer may be a first cladding layer, and the second layer may be a second cladding layer. In this case, the stripe-shaped second cladding layer can be reliably formed on the first cladding layer while maintaining the thickness of the first cladding layer.

According to a sixth aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting element formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium. Forming a second layer on the second layer; and forming a stripe-shaped opening in the second layer by etching.
Is a nitride-based semiconductor having a higher etching rate than the first layer.

In the manufacturing method according to the present invention, since the nitride-based semiconductor having an etching rate higher than that of the first layer is used as the material of the second layer, the first layer is etched when the second layer is etched. The etching rate becomes very slow or the etching is stopped in the layer of. Therefore, the first
The predetermined portion of the second layer can be reliably removed while maintaining the thickness of the second layer. As a result, the thickness of the first layer can be controlled with high accuracy, and the characteristics can be stabilized and the yield can be improved.

In particular, the first layer is a cladding layer and the second layer
May be a current blocking layer. In this case, a current blocking layer having a stripe-shaped opening can be reliably formed while maintaining the thickness of the cladding layer.

As a material for the second layer, boron, gallium,
A nitride semiconductor having a composition in which part of nitrogen in a nitride semiconductor containing at least one of aluminum and indium is replaced with a group V element other than nitrogen may be used. In this case, since part of nitrogen is replaced by a group V element other than nitrogen, the etching rate of the second layer is higher than that of the first layer, and the second layer is replaced with the first layer. On the other hand, lattice matching can be performed.

Further, indium aluminum nitrogen may be used as the material of the second layer. Also in this case, the etching rate of the second layer is higher than that of the first layer, and the second layer can be lattice-matched to the first layer.

[0032]

FIG. 1, FIG. 2, and FIG. 3 are schematic process sectional views showing a method of manufacturing a GaN-based semiconductor laser device according to a first embodiment of the present invention. This semiconductor laser device has a ridge stripe structure. Hereinafter, a method of manufacturing the semiconductor laser device of the present embodiment will be described with reference to FIGS.

First, as shown in FIG. 1, on a sapphire substrate 1, a low-temperature growth buffer layer 2 of Al _0.5 Ga _0.5 N having a thickness of 200 °, undoped GaN having a thickness of 3 μm
Layer 3, 3 μm thick n-GaN layer 4, 0.1 μm thick crack preventing layer 5 made of In _0.1 Ga _0.9 N, 0.8 μm thick n-cladding layer made of n-Al _0.1 Ga _0.9 N 6. 0.1 μm thick In _0.1 Ga _0.9 N multiple quantum well active layer 7; 0.1 μm thick p-Al
_The p-first cladding layer 8 made of _0.1 Ga _0.9 N and the p-second cladding layer 9 made of p-Al _0.2 Ga _0.8 N _0.9 P _{0.1 having a} thickness of 0.8 μm were formed by MOCVD (metalorganic chemical vapor deposition). Epitaxial growth is performed sequentially by a growth method) or the like.

Next, as shown in FIG.
P-second cladding except for the stripe region on the
The dry layer 9 is dry-etched by the RIBE method. Edge
CF as a gas_FourAnd the etching time is 30
Minutes. As a result, the p-first cladding layer 8 has
A p-type second cladding layer 9 in the form of a trip is formed. this
When Al_0.2Ga_0.8N_0.9P_0.1P-second
The cladding layer 9 is made of Al _0.1Ga_0.9P-first consisting of N
Etching rate is higher than that of cladding layer 8
Easily Therefore, the p-first cladding layer 8
The switching speed becomes very slow. That is, p-first
Rad layer 8 acts as an etch stop layer.

Further, as shown in FIG. 3, an n-GaN layer of 0.8 μm thick n-GaN is formed on the p-first cladding layer 8.
The current blocking layer 10 is grown, and the p-second cladding layer 9 is formed.
A film thickness of 0.1 μm
The p-contact layer 11 made of p-GaN is grown. Next, a part of the region from the p-contact layer 11 to the n-GaN layer 4 is etched by the RIBE method, and n-G
The aN layer 4 is exposed.

Finally, a p-electrode 12 is formed on the p-contact layer 11, and an n-electrode 13 is formed on the exposed n-GaN layer 4.
To form

As described above, in the method of manufacturing the semiconductor laser device of this embodiment, a material having a higher etching rate than the material of the p-first cladding layer 8 is used as the material of the p-second cladding layer 9. By selection, the p-first cladding layer 8 can be used as an etching stop layer when the p-second cladding layer 9 is etched. Therefore, while maintaining the thickness of the p-first cladding layer 8,
A predetermined portion of the second cladding layer 9 can be reliably removed. As a result, a high-precision ridge can be formed, and the characteristics of the semiconductor laser device can be stabilized and the yield can be improved.

The material of the p-second cladding layer 9 has a higher refractive index and a larger band gap than that of the material of the active layer 7, and the lattice constant of the p-first
It is necessary to be close to the material of the cladding layer 8.

FIGS. 4, 5 and 6 are schematic process sectional views showing a method for manufacturing a GaN-based semiconductor laser device according to a second embodiment of the present invention. This semiconductor laser device has a self-aligned structure. Hereinafter, a method for manufacturing the semiconductor laser device of the present embodiment will be described with reference to FIGS.

First, as shown in FIG. 4, a low-temperature growth buffer layer 22 made of Al _0.5 Ga _0.5 N, an undoped GaN layer 23, and an n-GaN layer 2 were formed on a sapphire substrate 21.
4, a crack prevention layer 25 made of In _0.1 Ga _0.9 N;
an n-cladding layer 26 made of n-Al _0.1 Ga _0.9 N;
A multiple quantum well active layer 27 of In _0.1 Ga _0.9 N;
p-first cladding layer 2 made of p-Al _0.1 Ga _0.9 N
8, and successively epitaxially growing a _{n-Al 0. 2 Ga 0.8 N} 0.9 P consists _0.1 n-current blocking layer 29.

Next, as shown in FIG. 5, a striped region of the n-current block layer 29 is dry-etched by the RIBE method to form a striped opening. At this time, since the thickness of the p-first cladding layer 28 is small, it is necessary to surely stop the etching at the p-first cladding layer 28 so that the etching does not proceed to the active layer 27. The n-current blocking layer 29 made of Al _0.2 Ga _0.8 N _0.9 P _0.1 has a higher etching rate than the p-first cladding layer 28 made of Al _0.1 Ga _0.9 N and is easily etched. Therefore, the p-first
The etching rate becomes very slow in the cladding layer 28. That is, the p-first cladding layer 28 functions as an etching stop layer.

Further, as shown in FIG. 6, p-Al _0.1 Ga _0.9 N is formed on the p-first cladding layer 28 and the n-current blocking layer 29 in the stripe-shaped opening.
Growing the second cladding layer 30, and growing the p-contact layer 31 made of p-GaN on the p-second cladding layer 30; Next, from the p-contact layer 31, n-GaN
A partial region up to the layer 24 is removed by the RIBE method, and n-
The GaN layer 24 is exposed.

Finally, a p-electrode 32 is formed on the p-contact layer 31, and an n-electrode 3 is formed on the exposed n-GaN layer 24.
Form 3

As described above, in the method of manufacturing the semiconductor laser device of this embodiment, a material having a higher etching rate than the material of the p-first cladding layer 28 is selected as the material of the n-current blocking layer 29. By doing, n
The p-first cladding layer 28 can be used as an etching stop layer when etching the current blocking layer 29; Therefore, a predetermined portion of the n-current blocking layer 29 can be reliably removed while maintaining the thickness of the p-first cladding layer 28. As a result, the p-first cladding layer 28
It is possible to control the film thickness of the semiconductor laser device with high accuracy, thereby stabilizing the characteristics of the semiconductor laser device and improving the yield.

FIG. 7 shows GaN according to a third embodiment of the present invention.
FIG. 2 is a schematic sectional view of a system semiconductor laser device. This semiconductor laser device has a ridge stripe structure.

In the semiconductor laser device shown in FIG.
Instead of the p-second cladding layer 9, a p-second cladding layer 9a made of InAlN is provided. p-second
The composition of In, Al and N of the cladding layer 9a is In _0.6
Al _0.4 N. The configuration of other parts of the semiconductor laser device of FIG. 7 is the same as the configuration of the semiconductor laser device of FIG.

In the semiconductor laser device of this embodiment,
By selecting a material having a higher etching rate than the material of the p-first cladding layer 8 as the material of the p-second cladding layer 9a, the p-first cladding layer 9a is etched when the p-first cladding layer 9a is etched. The cladding layer 8 can be used as an etching stop layer. Therefore, it is possible to reliably remove a predetermined portion of the p-second cladding layer 9a while maintaining the thickness of the p-first cladding layer 8. As a result, it is possible to form the ridge with high accuracy, and to stabilize the characteristics of the semiconductor laser device and improve the yield.

In the first and third embodiments, since the material containing P is used as the material of the p-second cladding layers 9 and 9a, wet etching is used instead of dry etching such as the RIBE method. Can also.

In the first, second and third embodiments, AlGaNP or InAlN is used as the material of the p-second cladding layers 9, 9a or the n-current blocking layer 30 to be etched. In addition, it is sufficient that at least one of B, Ga, Al, and In is contained as a group III element, and As, Sb is contained as a group V element.
Etc. may be included.

In the first and third embodiments,
Forming a striped n-second cladding layer and a p-current blocking layer on the crack prevention layer; forming an n-first cladding layer on the n-second cladding layer and the p-current blocking layer; -An active layer, a p-cladding layer and a p-contact layer may be sequentially formed on the first cladding layer.

Further, in the semiconductor laser device of the first, second or third embodiment, the n-type and p-type of each layer may be reversed.

In the above embodiment, the case where the present invention is applied to a semiconductor laser device has been described. However, the present invention can be applied to other GaN semiconductor light emitting devices such as a GaN light emitting diode.

[Brief description of the drawings]

FIG. 1 is a first schematic process sectional view illustrating a method for manufacturing a GaN-based semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a second schematic process sectional view illustrating the method for manufacturing the GaN-based semiconductor laser device according to the first embodiment of the present invention.

FIG. 3 is a third schematic process sectional view illustrating the method for manufacturing the GaN-based semiconductor laser device according to the first embodiment of the present invention.

FIG. 4 is a first schematic process sectional view illustrating a method for manufacturing a GaN-based semiconductor laser device according to a second embodiment of the present invention.

FIG. 5 is a second schematic process sectional view illustrating the method for manufacturing the GaN-based semiconductor laser device according to the second embodiment of the present invention.

FIG. 6 is a third schematic process sectional view illustrating the method for manufacturing the GaN-based semiconductor laser device according to the second embodiment of the present invention.

FIG. 7 is a schematic sectional view of a GaN-based semiconductor laser device according to a third embodiment of the present invention.

FIG. 8 is a first schematic process sectional view showing a method for manufacturing a conventional GaAs-based semiconductor laser device.

FIG. 9 is a second schematic process sectional view illustrating a method for manufacturing a conventional GaAs-based semiconductor laser device.

FIG. 10 is a third schematic process sectional view showing a method for manufacturing a conventional GaAs-based semiconductor laser device.

[Description of Signs] 1,21 Sapphire substrate 6,26 n-cladding layer 7,27 active layer 8,28 p-first cladding layer 9,30 p-second cladding layer 10,29 n-current blocking layer

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Claims (14)

[Claims] 1. A semiconductor light-emitting element formed of a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a second layer in a stripe shape is formed on the first layer, Current blocking layers are formed on the first layer on both sides of the second layer, and the second layer is formed of a nitride-based semiconductor having a higher etching rate than the first layer. A semiconductor light emitting device characterized by the above-mentioned. 2. A semiconductor light emitting device formed of a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a first light emitting device is provided on an active layer.
A second clad layer in a stripe shape is formed on the first clad layer, and a current blocking layer is formed on the first clad layer on both sides of the second clad layer. , The second cladding layer is the first cladding layer.
A semiconductor light-emitting device formed of a nitride-based semiconductor having an etching rate higher than that of the cladding layer. 3. The second cladding layer has a composition in which part of nitrogen in a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium is replaced by a group V element other than nitrogen. 3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is formed of a nitride semiconductor. 4. The semiconductor light emitting device according to claim 2, wherein said second cladding layer is formed of indium aluminum nitrogen. 5. A semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a current blocking layer having a stripe-shaped opening on a first layer is provided. A second layer is formed on the first layer and the current blocking layer in the opening, and the current blocking layer has a higher etching rate than the first layer. A semiconductor light emitting device characterized by being formed by: 6. A semiconductor light emitting device formed of a nitride semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a first light emitting device is provided on an active layer.
Is formed, a current blocking layer having a stripe-shaped opening is formed on the first cladding layer, and a second blocking layer is formed on the first cladding layer and the current blocking layer in the opening. A semiconductor light emitting device, wherein a clad layer is formed, and the current blocking layer is formed of a nitride-based semiconductor having a higher etching rate than the first clad layer. 7. The current blocking layer according to claim 7, wherein the current blocking layer comprises boron, gallium,
7. The nitride-based semiconductor having a composition in which a part of nitrogen in a nitride-based semiconductor containing at least one of aluminum and indium is replaced with a group V element other than nitrogen. Semiconductor light emitting device. 8. The semiconductor light emitting device according to claim 6, wherein said current blocking layer is formed of indium aluminum nitrogen. 9. A method for manufacturing a semiconductor light-emitting device formed of a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium, the method comprising:
Forming a second layer on the first layer, and patterning the second layer in a striped shape by etching, wherein the material of the second layer is larger than the first layer by etching. A method for manufacturing a semiconductor light emitting device, comprising using a nitride semiconductor having a high speed. 10. The method according to claim 9, wherein the first layer is a first cladding layer, and the second layer is a second cladding layer. 11. A method for manufacturing a semiconductor light emitting device formed of a nitride-based semiconductor containing at least one of boron, gallium, aluminum and indium, wherein a step of forming a second layer on the first layer is performed. Forming a stripe-shaped opening in the second layer by etching, and using a nitride-based semiconductor having a higher etching rate than that of the first layer as a material of the second layer. A method for manufacturing a semiconductor light emitting device, comprising: 12. The method according to claim 11, wherein the first layer is a cladding layer, and the second layer is a current blocking layer. 13. The material of the second layer is at least one of boron, gallium, aluminum and indium.
Nitrogen in the nitride-based semiconductors containing nitrogen is partially V
The method for manufacturing a semiconductor light emitting device according to any one of claims 9 to 12, wherein a nitride semiconductor having a composition substituted with a group III element is used. 14. The method according to claim 9, wherein indium aluminum nitrogen is used as a material of the second layer.
13. The method for manufacturing a semiconductor light-emitting device according to any one of 12.