JP2000114666A - Semiconductor light emitting element and manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light emitting element having a flat light emitting edge face and no reflection of light emitted from the light emitting edge face, and provide a manufacturing method. SOLUTION: In a semiconductor laser element 100, a buffer layer 2, an undoped GaN layer 3, an n-type GaN layer 4, an n-type crack preventive layer 5, an n-type AlGaN first clad layer 6, an MQW light emitting layer 7, a p-type AlGaN second clad layer 8, and a p-type contact layer 9 are formed sequentially on a sapphire substrate 1. In a region with a given length from each edge face of the semiconductor laser element 100, a part with a given depth from the p-type contract layer 9 to the n-type GaN layer 4 is removed by etching to form a step part 300 with a flat side face 41 and a bottom face 42. The bottom face 42 has a length W1 of 10 μm or below.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to GaN (gallium nitride), AlN (aluminum nitride) or InN.
The present invention relates to a semiconductor light emitting device having a compound semiconductor layer made of a III-V nitride-based semiconductor layer (hereinafter, referred to as a nitride-based semiconductor layer) such as (indium nitride) or a mixed crystal thereof, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Currently, digital video discs are
Further, there is an increasing demand for a high-density and large-capacity optical disk system. Research and development of GaN-based semiconductor laser devices that emit blue or violet light have been actively conducted as light sources to satisfy such demands.

When manufacturing a GaN-based semiconductor laser device, since there is no GaN-based substrate, a GaN-based semiconductor layer is formed on an insulating substrate such as sapphire (Al ₂ O ₃ ), which is the same hexagonal system as GaN. Grow. After forming a GaN-based semiconductor layer on a sapphire substrate, resonator surfaces are formed on both end surfaces of the GaN-based semiconductor layer.

In a conventional semiconductor laser device that emits infrared light or red light, the substrate and each semiconductor layer on the substrate have the same crystal orientation. Therefore, the substrate is cleaved on a surface that is easily cleaved. It is possible to form a resonator surface that is flush with the end surface of the substrate on the end surface of each of the above semiconductor layers.

On the other hand, in a GaN-based semiconductor laser device, both the sapphire substrate and the GaN-based semiconductor layer are easily cleaved on the (10-10) plane, but the crystal orientation of the sapphire substrate and the GaN-based semiconductor layer formed thereon is high. Are shifted, the (10-10) planes of the two are not the same plane. Therefore, (10-10) of sapphire substrate
Cleaved on the face.

FIG. 10 is a diagram showing the relationship between the crystal orientations of a sapphire substrate and a GaN-based semiconductor layer. In FIG. 10, the solid arrow indicates the crystal orientation of the sapphire substrate, and the broken arrow indicates the crystal orientation of the GaN-based semiconductor layer.

As shown in FIG. 10, the a-axis and the b-axis of the GaN-based semiconductor layer formed on the sapphire substrate are shifted by 30 ° from the a-axis and the b-axis of the sapphire substrate. In the case of cleavage at the (10-10) plane, the cleavage plane of the GaN-based semiconductor layer becomes the (11-20) plane, and a flat resonator surface cannot be formed on the GaN-based semiconductor layer. For this reason, in the GaN-based semiconductor laser device, the cavity surface is formed by a dry etching method such as the RIE method (reactive ion etching method) or the RIBE method (reactive ion beam etching method) without using the cleavage method. Further, a cleavage method is also possible, but in this case, there is a problem that the threshold current increases.

FIG. 11 is a schematic process sectional view showing a conventional method for manufacturing a semiconductor laser device.

As shown in FIG. 11A, first, an undoped buffer layer 32, an undoped GaN layer 33, an n-GaN layer 34, a crack prevention layer 35, and an n-first cladding layer are formed on a sapphire substrate 31. 36, light emitting layer 37, p-
A second cladding layer 38 and a p-contact layer 39 are grown in sequence. The arrow Y in the figure indicates the sapphire substrate 1
In the <10-10> direction.

Next, as shown in FIG. 11B, a partial region from the p-contact layer 39 to a predetermined depth of the n-GaN layer 34 is removed by a dry etching method, and n-G
The aN layer 34 is exposed. Thus, a flat resonator surface 51 and a flat portion 52 of the n-GaN layer 34 are formed.

Further, as shown by an arrow X in FIG. 11B, the sapphire substrate 31 is placed on the buffer layer 32 and the GaN layer 33 at the center of the flat portion 52 of the n-GaN layer 34.
11 and the n-GaN layer 34, as shown in FIG.
As shown in (1), individual semiconductor laser elements 104 are manufactured. When dividing the sapphire substrate 31, a linear scratch is formed on the back surface of the sapphire substrate 31 by scribing, and the sapphire substrate 31 is cleaved at the scratched portion, or a kerf is formed in the sapphire substrate 31 by dicing. Form.

[0012]

In order to separate the individual semiconductor laser devices 104 by the above-described method, the width W ₄ of the flat portion 52 of the n-GaN layer 34 exposed by etching in the semiconductor laser device 104 must be reduced. It needs to be several tens to several hundreds μm. For this reason, as shown in FIG. 12, in the semiconductor laser element 104, the laser light 50 emitted from one of the resonator surfaces 51 is reflected by the flat portion 52 of the n-GaN layer 34, and the far field pattern of the laser light 50 (FFP; far-field image) is disturbed. Such a semiconductor laser device 104 is not suitable for practical use.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a GaN device having a flat light emitting end face and not causing reflection of light emitted from the light emitting end face.
An object of the present invention is to provide a system-based semiconductor light emitting device and a method for manufacturing the same.

[0014]

According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, comprising: a light emitting layer for emitting light on a substrate; and at least one of gallium, aluminum and indium. A step of forming a nitride-based semiconductor layer including, a step of dividing the substrate together with the nitride-based semiconductor layer, and a step perpendicular to the surface of the light-emitting layer by etching a divided surface of the divided nitride-based semiconductor layer. Forming a light emitting end face.

In the method for manufacturing a semiconductor light emitting device according to the present invention, a nitride semiconductor layer including a light emitting layer for emitting light is formed on a substrate, and then the substrate is divided together with the nitride semiconductor layer.

The divided surface of the nitride-based semiconductor layer divided as described above has poor flatness and poor perpendicularity to the surface of the light emitting layer. For this reason, the light-emitting end face is formed by etching the division surface of the nitride-based semiconductor layer. The light emitting end face formed as described above is flat and has good perpendicularity to the surface of the light emitting layer. In the nitride-based semiconductor light emitting device having such a light emitting end face, light loss at the light emitting end face is reduced.

The step of forming the light emitting end face may include forming a step having a side face and a bottom face serving as the light emitting end face by dry-etching the divided surface of the nitride-based semiconductor layer.

In the above-described manufacturing method, the conventional nitride-based semiconductor layer is formed by dividing the nitride-based semiconductor layer and then dry-etching the divided surface to form a step at the end of the nitride-based semiconductor layer. Unlike the method for manufacturing a light emitting element, it is not necessary to increase the length of the bottom surface of the step in the light emission direction in order to divide the nitride-based semiconductor layer. For this reason, the length of the bottom surface of the step in the light emission direction can be reduced.

It is preferable that the length of the bottom surface of the step in the light emitting direction is 10 μm or less.

Thus, the light emitted from the side surface of the step is prevented from being reflected on the bottom surface of the step.

Further, it is preferable that the distance between the lower end of the light emitting layer and the bottom surface of the step is 10 μm or more.

Thus, the lower end of the light emitting layer can be sufficiently separated from the bottom surface of the step, so that the light emitted from the side surface of the step can be sufficiently prevented from being reflected on the bottom surface of the step.

Further, the length of the side surface of the step in the horizontal direction is preferably at least 10 μm.

When a step is formed on a part of the width of the nitride-based semiconductor light emitting device, walls are formed on both sides or one side of the bottom surface of the step. By setting the length of the step portion as described above, the light emitted from the side surface of the step portion is prevented from being reflected on the inner surface of the step portion wall.

According to a second aspect of the present invention, there is provided a semiconductor light emitting device including a light emitting layer for emitting light and a nitride semiconductor layer containing at least one of gallium, aluminum and indium formed on a substrate. A step portion having a side surface and a bottom surface is formed at an end of the semiconductor layer, the side surface of the step portion constitutes a light emitting end surface of the light emitting layer, and the length of the bottom surface of the step portion in the light emitting direction is 10 μm or less. .

In the semiconductor light emitting device according to the present invention,
Because the length of the bottom surface of the step in the light emission direction is small,
Light emitted from the side surface of the step portion is prevented from being reflected on the bottom surface of the step portion.

Preferably, the distance between the lower end of the light emitting layer and the bottom surface of the step is at least 10 μm.

Thus, the lower end of the light emitting layer can be sufficiently separated from the bottom surface of the step, so that the light emitted from the side surface of the step can be sufficiently prevented from being reflected on the bottom surface of the step.

Further, it is preferable that the length of the side surface of the step in the horizontal direction is 10 μm or more.

In a nitride semiconductor light emitting device having a step portion formed in a part in the width direction, a wall portion exists on both sides or one side of the bottom surface of the step portion. By setting the length of the step portion as described above, light emitted from the side surface of the step portion is prevented from being reflected on the inner surface of the wall of the step portion.

[0031]

FIG. 1 is a schematic sectional view showing the structure of a GaN-based semiconductor laser device according to a first embodiment of the present invention. The semiconductor laser device 100 shown in FIG. 1 is a semiconductor laser device having a ridge waveguide structure. The arrow Y in the figure indicates the <10-10> direction of the sapphire substrate.

On the (0001) plane of the sapphire substrate 1,
300 mm thick undoped Al _0.5 Ga _0.5 N
Buffer layer 2, undoped GaN layer 3 having a thickness of 2 μm, n-GaN layer 4 having a thickness of 3 μm, n-In _0.1 Ga
0.1-μm-thick n-crack preventing layer 5 made of _0.9 N, n-first clad layer 6 made of n-Al _0.15 Ga _0.85 N and 0.7 μm-thickness, and multiple quantum well light emitting layer made of undoped InGaN (Hereinafter referred to as MQW light emitting layer)
7, a 0.7 μm-thick p-second cladding layer 8 made of p-Al _0.15 Ga _0.85 N and a p-contact layer 9 made of 0.2 μm-thick p-GaN are formed. In each layer in FIG. 1, Si is used as an n-type dopant, and Mg is used as a p-type dopant.

As shown in the energy band diagram of FIG. 2, the MQW light-emitting layer 7 has six In _0.03 Ga layers each having a thickness of 60 °.
_0.97 N quantum barrier layer 71 and five 30 mm thick In _0.18 G
a _0.82 N quantum well layers 72 are included in a multiple quantum well structure alternately stacked. Both surfaces of the multiple quantum well structure are sandwiched between GaN optical guide layers 73 having a thickness of 0.1 μm.

As shown in FIG. 1, the semiconductor laser device 10
The portions from the p-contact layer 9 to the n-GaN layer 4 at a predetermined depth in a region having a predetermined width from both end surfaces of the zero are removed by etching, thereby forming a stepped portion 300 having flat side surfaces 41 and a bottom surface 42. Side surface 41 of step 300
Becomes the resonator surface.

Step 300 in the direction of emission of laser light
The length W ₁ of the bottom surface 42 is 10μm or less. Therefore, the laser light 50 emitted from one resonator surface is not reflected on the bottom surface 42 of the step 300.

Next, the semiconductor laser device 100 shown in FIG.
Will be described with reference to the manufacturing process diagrams of FIGS. 3 to 5 are perspective views showing a manufacturing process. 6A to 8A are perspective views showing a manufacturing process, and FIG. 6B is a longitudinal sectional view taken along a direction perpendicular to the resonator surface.

First, as shown in FIG. 3, a buffer layer 2, an undoped GaN layer 3, and an n-G layer are formed on a sapphire substrate 1 by MOCVD (metal organic chemical vapor deposition).
The aN layer 4, the n-crack preventing layer 5, the n-first cladding layer 6, the MQW light emitting layer 7, the p-second cladding layer 8, and the p-contact layer 9 are successively grown in this order. Hereinafter, the GaN-based semiconductor layer 2 from the buffer layer 2 to the p-contact layer 9
Call it 00.

Next, a Ni mask (not shown) is formed in a stripe-shaped region on the p-contact layer 9 along the arrow Y direction.
Is formed, and by using this, the p-contact layer 9 and the p-second cladding layer 8 are removed by etching to a predetermined depth by RIE (reactive ion etching) or RIBE (reactive ion beam etching). I do.
In this manner, as shown in FIG. 4, a stripe-shaped ridge portion formed of the p-second cladding layer 8 and the p-contact layer 9 along the direction of arrow Y is formed. In the etching, it is preferable to stop the etching when the thickness of the flat portion of the p-second cladding layer 8 becomes about 0.1 to 0.4 μm.

After removing the Ni mask,
A Ni mask (not shown) is formed on a region having a predetermined width including the stripe-shaped ridge portion, and is used to perform RIE from the p-second cladding layer 8 to a predetermined depth of the n-GaN layer 4.
5 is removed by etching using the method of FIG.
The n-GaN layer 4 is exposed as shown in FIG.

After the above etching, the Ni mask is removed, and as shown in FIG. 6, both sides of the ridge portion except for the upper surface of the p-contact layer 9 and the upper surface of the n-GaN layer 4,
The upper surface of the flat portion of the p-second cladding layer 8 and the side surface from the p-second cladding layer 8 to the n-GaN layer 4 are formed by EB (electron beam evaporation) or CVD (chemical vapor deposition). Then, a SiO ₂ film 10 is formed as an insulating film.
The SiO ₂ film 10 is for performing current constriction and protecting an exposed portion of the pn junction. SiO ₂ film 1
The thickness of 0 is preferably about 1000-5000 °.

Further, as shown in FIG. 7, a p-electrode 11 is formed so as to cover the upper surface of the p-contact layer 9, and the n-G
An n-electrode 12 is formed on the exposed upper surface of the aN layer 4. The p-electrode 11 is made of 5000 nm thick Ni and the n-electrode 12
Is composed of Ti having a thickness of 200 ° and Al having a thickness of 5000 °. Since the p-electrode 11 and the n-electrode 12 are damaged during the etching for forming the resonator surface described later, the thickness of the p-electrode 11 and the n-electrode 12 is set to 1 μm or more.

As described above, the p-electrode 11 and the n-electrode 1
After the formation of 2, the sapphire substrate 1 is divided together with the GaN-based semiconductor layer 200 on a plane perpendicular to the arrow Y direction, that is, on the (10-10) plane of the sapphire substrate 1, to form individual semiconductor laser elements 100.

As a dividing method, a linear scratch is formed by scribing in advance in the direction perpendicular to the arrow Y on the back surface of the sapphire substrate 1, and the sapphire substrate 1 is cleaved by the scratch. This facilitates cleavage.

The sapphire substrate 1 has a thickness of 200 μm.
When the thickness is as thick as m or more, the cleavage as described above is difficult.
For this reason, it is preferable that the sapphire substrate 1 has a thickness of 200 μm or less by making a cut groove by dicing in the direction perpendicular to the arrow Y on the back surface of the sapphire substrate 1 or polishing the back surface of the sapphire substrate 1.

The cleavage surface 53a of the sapphire substrate 1 formed as described above becomes the (10-10) plane, and
The cleavage surface 53b of the system semiconductor layer 200 is a (11-20) plane.

As shown in FIG. 7B, the cleavage surface 53b of the GaN-based semiconductor layer 200 has poor flatness and poor perpendicularity to the optical axis of the laser beam. In order to improve these points, as shown in FIG. 8, in a region having a predetermined width from the cleavage surface 53b of the GaN-based semiconductor layer 200, the FIB (from the p-contact layer 9 to the predetermined depth of the n-GaN layer 4) is formed. Etching is performed by a focused ion beam etching method to form a stepped portion 300 having a side surface 41 and a bottom surface 42.

The side surface 41 of the step 300 serves as a resonator surface for emitting a laser beam. The resonator surface obtained by etching is flat and has good perpendicularity to the optical axis of the laser beam.

As shown in FIG. 8, the length W ₁ of the bottom surface 42 of the step portion 300 in the emission direction of the laser light is 10
μm or less, particularly preferably 1 to 5 μm. This prevents the laser light emitted from the resonator surface from being reflected on the bottom surface 42 of the step 300.

Also, the stepped portion 3 from the lower end of the MQW light emitting layer 7
The distance to the bottom surface 42 of 00 is preferably 10 μm or more, more preferably several tens μm or more.

In this embodiment, the etching depth W ₂ of the n-GaN layer 4 is set to 10 μm or more. This makes it difficult for the laser light emitted from the resonator surface to be reflected on the bottom surface 42 of the step portion 300. The etching depth W
_{In order} to make ₂ deep, it is necessary to grow the n-GaN layer 4 as thick as possible.

Note that the stepped portion 300 is not necessarily located in the width direction of the semiconductor laser device 100 (horizontal direction parallel to the cavity surface).
May not be formed over the entirety of the step portion 300.
It is preferable that the width W ₃ of the above 10 [mu] m. When the step portion 300 is formed in a part of the width direction of the semiconductor laser device 100, a wall portion is formed on both sides or one side of the bottom surface 42 of the step portion 300. In this embodiment, the width of the semiconductor laser device 100 and the width W _{3 of the} step portion 300 are made equal. Thus, since no walls are formed on both sides of the bottom surface 42 of the step portion 300, the laser light emitted from the resonator surface is prevented from being reflected on the inner surface of the wall portion of the step portion 300.

The length W ₁ of the bottom surface 42 of the step 300, the etching depth W _2, and the width W of the step 300
When setting ₃ , the laser light is adjusted to the stepped portion 300 in consideration of the flatness of the cavity surface of the semiconductor laser element 100, the perpendicularity to the optical axis of the laser light, the vertical beam spread angle of the laser light, and the like. Is set so as not to be reflected on the bottom surface 42 or the inner surface of the wall.

As described above, in the semiconductor laser device 100 according to the present embodiment, since the laser light emitted from the cavity surface is not reflected on the bottom surface 42 of the step 300, a practically usable FFP is obtained. can get. Further, since the flatness of the cavity surface and the perpendicularity to the optical axis of the laser beam are excellent, it is possible to suppress the loss of the laser beam caused by the unevenness of the cavity surface.

In the above embodiment, the sapphire substrate 1 was used as the substrate, and the SiO ₂ film 1 was used as the insulating film.
Although 0 was used, a spinel substrate or the like may be used as the substrate, a SiN film may be used as the insulating film, or an n-GaN-based semiconductor layer may be used instead of the insulating film.

Further, in the above embodiment, the method of manufacturing the semiconductor laser device 100 having the ridge waveguide structure has been described. However, the semiconductor laser device having the self-aligned structure can be manufactured by the method of manufacturing a semiconductor light emitting device according to the present invention. Can also be produced.

FIG. 9 shows a second embodiment of the present invention.
FIG. 3 is a perspective view illustrating a structure of an N-based semiconductor laser device. FIG.
Is a semiconductor laser device having a self-aligned structure.

On the (0001) plane of the sapphire substrate 11, a thickness 30 of undoped Al _0.5 Ga _0.5 N
0 ° buffer layer 12, 2 μm thick undoped Ga
N layer 13, 3 μm thick n-GaN layer 14, n-In
_0.1 μm thick anti-crack layer 15 of _0.1 Ga _0.9 N, _0.7 μm thick of n-Al _0.15 Ga _0.85 N
m n-first cladding layer 16, undoped InGaN
MQW light-emitting layer 17 of p-Al _0.15 Ga
A p-second cladding layer 18 of _0.85 N and a thickness of 0.1 to 0.4 μm is formed. The MQW light emitting layer 17
Is the same as the structure of the MQW light emitting layer 7 shown in FIG.

[0058] Except for the p- stripe regions of the second cladding layer 18, n-current blocking layer 19 having a thickness of 0.5μm made of n-Al _0.2 Ga _{0. 8} N is formed. Further, p-Al _0.15 is formed on the n-current block layer 19 and the stripe-shaped region of the p-second cladding layer 18.
0.6 μm thick p-third cladding layer 20 made of Ga _0.85 N and 0.2 μm thick p-GaN made of p-GaN
Contact layers 21 are formed in order. In each layer in FIG. 9, Si is used as the n-type dopant, and Mg is used as the p-type dopant.

From the p-contact layer 21 to the n-GaN layer 1
4 is removed by etching to a predetermined depth, and the n-GaN layer 14 is exposed. Further, on the p-contact layer 21, a 5000 nm thick N
A p-electrode 22 made of i is formed, and an exposed surface of the n-GaN layer 14 is provided with Ti having a thickness of 200 ° and a thickness of 5000
An n-electrode 23 made of Al is formed.

In a region having a predetermined width from both end surfaces of the semiconductor laser element 102, the n-Ga
A predetermined depth of the N layer 14 is removed by etching,
A step portion 600 having flat side surfaces 61 and a bottom surface 62 is formed. The side surface 61 of the step 600 serves as a resonator surface.

In manufacturing the semiconductor laser device 102 shown in FIG. 9, first, an MOCV is placed on a sapphire substrate 11.
The buffer layer 12, undoped GaN layer 13, n-GaN layer 14,
n-crack preventing layer 15, n-first cladding layer 16, M
The QW light emitting layer 17, the p-second cladding layer 18, and the n-current blocking layer 19 are sequentially and continuously grown.

Next, except for a stripe-shaped region on the n-current block layer 19, N
An i-mask is formed, and this is used to perform RIE or RI
The n-current blocking layer 19 is etched by the BE method.

Subsequently, after removing the Ni mask,
On the n-current blocking layer 19 and the p-second cladding layer 1
8, a p-third cladding layer 20
And the p-contact layer 21 is continuously grown.

Next, the semiconductor laser device 102 is manufactured by performing the same steps as those of the semiconductor laser device 100 shown in FIGS.

The step portion 6 of the semiconductor laser device 102
In the etching for forming the layer _No. 00, the length W1 of the bottom surface 62 is set to 10 μm or less (especially ₁ to 5 μm is preferable), and n
It is preferable that the etching depth W ₂ of the GaN layer 14 be 10 μm or more, and the width W ₃ of the step portion 600 be 10 μm or more.

In the semiconductor laser device 102 according to the present embodiment manufactured as described above, since the laser light emitted from the cavity surface is not reflected on the bottom surface 62 of the step portion 600, a practically usable FFP Is obtained. Further, since the flatness of the cavity surface and the perpendicularity to the optical axis of the laser beam are excellent, it is possible to suppress the loss of the laser beam caused by the unevenness of the cavity surface.

In the first and second embodiments, the case where the present invention is applied to a GaN-based semiconductor laser device has been described. However, the present invention relates to an edge-emitting type light emitting diode or the like using a GaN-based semiconductor. It can be applied to other semiconductor light emitting devices.

In the first and second embodiments, the FIB which can easily form a vertical and flat end face is used.
The end face was etched by E method,
Etching may be performed by the IBE method.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing the structure of a GaN-based semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is an energy band diagram showing a structure of an MQW light emitting layer.

FIG. 3 is a first manufacturing process diagram showing a method for manufacturing the GaN-based semiconductor laser device of FIG. 1;

FIG. 4 is a second manufacturing process diagram showing a method for manufacturing the GaN-based semiconductor laser device of FIG. 1;

FIG. 5 is a third manufacturing process diagram showing a method for manufacturing the GaN-based semiconductor laser device of FIG. 1;

FIG. 6 is a fourth manufacturing step diagram showing the method for manufacturing the GaN-based semiconductor laser device of FIG.

FIG. 7 is a fifth manufacturing step diagram showing the method for manufacturing the GaN-based semiconductor laser device of FIG.

FIG. 8 is a sixth manufacturing process diagram showing the method for manufacturing the GaN-based semiconductor laser device of FIG. 1;

FIG. 9 is a perspective view showing a structure of a GaN-based semiconductor laser device according to a second embodiment of the present invention.

FIG. 10 shows a sapphire substrate and G formed thereon.
FIG. 3 is a diagram illustrating a relationship between crystal orientations of an aN-based semiconductor layer.

FIG. 11 is a process sectional view illustrating a method for manufacturing a conventional GaN-based semiconductor laser device.

FIG. 12 is a cross-sectional view illustrating a method for manufacturing a conventional GaN-based semiconductor laser device.

[Explanation of symbols]

 1,11,31 sapphire substrate 2,12,32 buffer layer 3,13,33 undoped GaN layer 4,14,34 n-GaN layer 5,15,35 crack prevention layer 6,16,36 n-first clad Layer 7, 17, 37 MQW light-emitting layer 8, 18, 38 p-second cladding layer 9, 21, 39 p-contact layer 19 n-current blocking layer 20 p-third cladding layer 41, 51, 61 side surface 42, 52, 62 Bottom surface 50 Laser light 100, 102, 104 GaN-based semiconductor laser device 300, 600 Stepped portion

Claims (8)

[Claims] Forming a nitride-based semiconductor layer including a light-emitting layer that emits light and including at least one of gallium, aluminum, and indium on a substrate; and forming the substrate together with the nitride-based semiconductor layer on the substrate. A semiconductor, comprising: a step of dividing; and a step of forming a light emitting end face perpendicular to the surface of the light emitting layer by etching a divided face of the divided nitride-based semiconductor layer. A method for manufacturing a light-emitting element. 2. The step of forming the light-emitting end face includes forming a step having a side face and a bottom face serving as the light-emitting end face by dry-etching the divided surface of the nitride-based semiconductor layer. 2. The method according to claim 1, wherein
The manufacturing method of the semiconductor light emitting device according to the above. 3. The method of manufacturing a semiconductor light emitting device according to claim 2, wherein the length of the bottom surface of the step in the light emitting direction is 10 μm or less. 4. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein a distance between a lower end of said light emitting layer and said bottom surface of said step portion is 10 μm or more. 5. The apparatus according to claim 1, wherein the side surface of said step portion in the horizontal direction has a length of 10 μm or more.
The method for manufacturing a semiconductor light emitting device according to any one of the above. 6. A nitride-based semiconductor layer including a light-emitting layer that emits light and including at least one of gallium, aluminum, and indium is formed on a substrate, and a side surface and an edge of the nitride-based semiconductor layer are formed at an end of the nitride-based semiconductor layer. A step portion having a bottom surface is formed, the side surface of the step portion forms a light emitting end surface of the light emitting layer, and the length of the bottom surface of the step portion in the light emitting direction is 10 μm or less. Semiconductor light emitting device. 7. The semiconductor light emitting device according to claim 6, wherein a distance between a lower end of said light emitting layer and said bottom surface of said step portion is 10 μm or more. 8. The device according to claim 6, wherein the length of the side surface of the step in the horizontal direction is 10 μm or more.
Or a semiconductor light emitting device according to 7.