CN103872206A - Method for manufacturing light emitting device and light emitting device manufactured by method - Google Patents
Method for manufacturing light emitting device and light emitting device manufactured by method Download PDFInfo
- Publication number
- CN103872206A CN103872206A CN201210545472.6A CN201210545472A CN103872206A CN 103872206 A CN103872206 A CN 103872206A CN 201210545472 A CN201210545472 A CN 201210545472A CN 103872206 A CN103872206 A CN 103872206A
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- layer
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- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention discloses a method for manufacturing a light emitting device and the light emitting device manufactured by the method. The method comprises the following steps: providing a substrate; forming a light emitting structure on the substrate, wherein the light emitting structure is provided with an active layer; forming a protection layer on the light emitting structure, wherein the protection layer has a first thickness; etching the protection layer to enable the protection layer to have a second thickness which is smaller than the first thickness; patterning the protection layer.
Description
Technical field
The present invention relates to a kind of manufacture method that forms light-emitting device, particularly relate to a kind of method of etching one protective layer.
Background technology
Light-emitting diode (Light Emitting Diode in solid-state light emitting element; LED) there is low power consumption, lower calorific value, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can sends the good photoelectric characteristic such as coloured light of wavelength stabilization, be therefore often applied to the field such as indicator light and photovoltaic of household electrical appliances, instrument.
The general manufacture method that forms light-emitting diode comprises many gold-tinted manufacture crafts, and each gold-tinted manufacture craft all comprises complicated step.How this shortens manufacturing process steps is still an important subject under discussion at present to reduce cost.
In addition, above light-emitting diode can form further combined with a carrier (sub-mount) light-emitting device, for example bulb.Described light-emitting device comprises an inferior carrier with at least one circuit; At least one scolder (solder) is positioned on above-mentioned carrier, above-mentioned light-emitting diode is fixed on time carrier and is made the substrate of light-emitting diode form and be electrically connected with the circuit on time carrier by this scolder; And an electric connection structure, with the circuit on the electronic pads that is electrically connected light-emitting diode and time carrier; Wherein, above-mentioned inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), to facilitate the circuit of light-emitting device to plan and to improve its radiating effect.
Summary of the invention
For addressing the above problem, the invention provides a kind of manufacture method that forms light-emitting device, comprise: form a ray structure on a substrate, ray structure has an active layer; Form a protective layer on ray structure, protective layer has one first thickness; Etch protection layer makes protective layer have one second thickness to be less than the first thickness; And graphical protective layer.
Accompanying drawing explanation
Figure 1A-Fig. 1 H is the manufacture method cutaway view of formation one light-emitting device of the present invention;
The light-emitting device that Fig. 2 A forms for manufacturing method according to the invention;
Fig. 2 A of Fig. 2 B is partial enlarged drawing;
Fig. 3 A-Fig. 3 C shows the top view of light-emitting device of the present invention;
Fig. 4 shows the exploded view of a bulb of the present invention.
Main element symbol description
100,100 ', 100 ": light-emitting device
10a, 10b: substrate
1000: luminous laminated construction
101: sloped sidewall
102: upper surface
104: first side
105: Second Edge
106: the three limits
107: the four limits
11: ray structure
111: the first type semiconductor layer
112: active layer
113: Second-Type semiconductor layer
1131: first area
1132: second area
12: protective layer
120: protective layer
121: barrier layer
1211: lower surface
1212: sidewall
1213: the first elongated areas
1213 ': elongated area
1214: the second elongated areas
1215,1215 ': electrode zone
13: transparency conducting layer
14,14 ', 14 ": the first electrode
141,141 ', 141 ": the first electronic pads
142,142 ', 142 ": the first extension electrode
15,15 ', 15 ": the second electrode
151,151 ', 151 ": the second electronic pads
152: the second extension electrodes
16: groove
21: lampshade
22: lens
23: carrier
24: light emitting module
25: support plate
26: heat-sink unit
27: connector
28: circuit unit
30: bulb
Embodiment
Following examples will be accompanied by accompanying drawing concept of the present invention will be described, in accompanying drawing or explanation, similar or identical part is to use identical label, and in the accompanying drawings, the shape of element or thickness can expand or dwindle.Need pay special attention to, the element that does not illustrate in figure or describe, can be the form of haveing the knack of known to the personage of this technology.
Figure 1A-Fig. 1 G is the manufacture method schematic diagram of formation one light-emitting device 100 of the present invention.
As shown in Figure 1A, provide a substrate 10a, and form a ray structure 11 on substrate 10a.In this embodiment, substrate 10a is a sapphire wafer substrate.Ray structure 11 sequentially comprises one first type semiconductor layer 111; One active layer 112; And one Second-Type semiconductor layer 113 be formed on substrate 10a.The first type semiconductor layer 111 and Second-Type semiconductor layer 113 are for example coating layer (cladding layer) or limiting layer (confinement layer), electronics, hole can be provided respectively, make electronics, hole in active layer 112 in conjunction with luminous.As shown in Figure 1B, etch activity layer 112 and Second-Type semiconductor layer 113 are to form multiple luminous laminated construction 1000.The apart distance of multiple luminous laminated construction 1000 is arranged in substrate 10a above and exposes part the first type semiconductor layer 111.In addition, the light-emitting device 100 in the present embodiment is a horizontal configuration, but also can be the design of a rectilinear structure or other multi-form structures.As shown in Figure 1 C, form a protective layer 12 to cover the first type semiconductor layer 111, active layer 112, Second-Type semiconductor layer 113 and substrate 10a.Protective layer 12 has one first thickness (t
1) and have in the function of ensuing etching step protection ray structure 11.In the present embodiment, the first thickness (t
1) be
as shown in Fig. 1 D, utilize a laser cutting substrate 10 with at interior formation one groove 16 of substrate 10, wherein, groove 16 has leg-of-mutton section.Should be noted, while using laser cutting, can produce some accessory substances and be piled up in groove 16, need carry out an etching step to remove accessory substance.So, in the time of etch byproducts, also can etch protection layer 12.Therefore,, as shown in Fig. 1 E, after etching step, protective layer 120 has one and is less than the first thickness (t
1) the second thickness (t
2), the second thickness between
the first thickness (t
1) and the second thickness (t
2) poor (t
1-t
2) be greater than
in the present embodiment, the method for etch byproducts (and while etch protection layer 12) is to comprise with an acid solution wet etching accessory substance and protective layer 12, and acid solution is for comprising phosphoric acid (H
3pO
4) and sulfuric acid (H
2sO
4) mixed solution, wherein sulfuric acid (H
2siO
4) and phosphoric acid (H
3pO
4) concentration ratio be about three to one.In other embodiment, acid solution also can be selected phosphoric acid solution.As shown in Fig. 1 F, by protective layer 120 patternings to form a patterning protective layer 121.In the present embodiment, patterning protective layer 121 also can be as an electric current barrier layer 121.As shown in Figure 1 G, form a transparency conducting layer 13 on barrier layer 121 and Second-Type semiconductor layer 113.As shown in Fig. 1 H, form one first electrode 14 on transparency conducting layer 13 and correspond on the position of barrier layer 121 and form one second electrode 15 in the first type semiconductor layer 111.Protective layer 121 or barrier layer 121 are an insulating material and have a penetrance that is greater than 90% for visible ray.Separately, barrier layer 121 has a resistivity and is greater than 10
14Ω-cm.Barrier layer 121 can comprise silicon dioxide (SiO
2), silicon nitride (SiN
x) or titanium dioxide (TiO
2) etc. material.Then, along the luminous laminated construction 1000 of groove 16 splitting to form multiple light-emitting devices 100.
Fig. 2 A is the made light-emitting device 100 of Figure 1A-Fig. 1 H according to the present invention.Fig. 2 B is the partial enlarged drawing of Fig. 2 A.Ray structure 11 is formed on substrate 10b.Ray structure 11 sequentially comprises one first type semiconductor layer 111; One active layer 112; An and Second-Type semiconductor layer 113.Second-Type semiconductor layer 113 has a first area 1131 and a second area 1132.Barrier layer 121 is formed on first area 1131, and has a lower surface 1211 and a sidewall 1212.Wherein, sidewall 1212 tilt with respect to lower surface 1211 and with the angle (Θ) of lower surface 1211 between 10 °-70 °.Transparency conducting layer 13 is formed on the sidewall 1212 of barrier layer 121 and has one the 3rd thickness (t
3); Transparency conducting layer 13 is also formed on the second area 1132 of Second-Type semiconductor layer 113 and has one the 4th thickness (t
4).Because sidewall 1212 and the angle (Θ) of lower surface 1211 are less than 70 °, transparency conducting layer can be covered on the sidewall 1212 of barrier layer 121 and the second area 1132 of Second-Type semiconductor layer 113 equably.In the present embodiment, transparency conducting layer 13 is formed on the thickness and the poor (t of thickness of second surface 1132 that is formed on Second-Type semiconductor layer 113 of the sidewall 1212 of barrier layer 121
3-t
4) be formed on the thickness (t of the sidewall 1212 of barrier layer 121 with transparency conducting layer 13
3) ratio ((t
3-t
4)/t
3) be not more than 10%.In addition,, in laser step, because form the groove 16 (with reference to Fig. 1 D) of a triangular form in substrate 10a, therefore, when the luminous laminated construction 1000 of splitting is to form when light-emitting device 100, substrate 10b can have a sloped sidewall 101.Sloped sidewall 101 tilts with respect to a upper surface 102 of substrate 10b and sloped sidewall 101 is greater than 90 ° with the angle of the upper surface 102 of substrate 10b.In addition, sloped sidewall 101, after laser cutting, can be etched with and remove the accessory substance that laser cutting is formed with acid solution again, therefore makes sloped sidewall 101 have a rough surface.
Fig. 3 A-Fig. 3 C is light-emitting device 100,100 ', 100 of the present invention " top view.Light-emitting device 100,100 ', 100 " there is a rectangular shape and comprise a first side 104, a Second Edge 105, one the 3rd limit 106 and one the 4th limit 107.As shown in Figure 3A, light-emitting device 100 comprises the first electrode 14, near first side 104 and being formed on the position of the corresponding barrier layer 121 of transparency conducting layer 13.In the present embodiment, the first electrode 14 has roughly the same shape with barrier layer 121.The first electrode 14 comprises one first electronic pads 141 and multiple the first extension electrode 142 extends from the first electronic pads 141.The area of barrier layer 121 is greater than the area of electronic pads 141 and extension electrode 142.Light-emitting device 100 more comprises one second electrode 15, near the Second Edge 105 with respect to first side 104.The second electrode 15 comprises one second electronic pads 151 and one second extension electrode 152 extends to first side 104, and the first extension electrode 142 is the extension of the direction toward the second electronic pads 151 (toward the direction of Second Edge 105) from the first electronic pads 141.In addition, the first electronic pads 141 also can be placed in the folded corner of nearly first side 104 and the 3rd limit 106, and the second electronic pads 151 also can be placed in the folded corner of nearly Second Edge 105 and the 4th limit 107, and the second extension electrode 152 extends to the first electronic pads 141.In another embodiment, as shown in Figure 3 B, light-emitting device 100 ' comprises one first electrode 14 ' and one second electrode 15 '.The first electrode 14 ' comprises one first electronic pads 141 ' and one first extension electrode 142 '.The second electrode 15 ' comprises one second electronic pads 151 '.The first extension electrode 142 ' extends (toward the direction of Second Edge 105) from the first electronic pads 141 ' toward the direction of the second electronic pads 151 '.In addition, barrier layer 121 comprises an electrode zone 1215, multiple the first elongated area 1213 and multiple the second elongated area 1214.The electrode zone 1215 of barrier layer 121 is formed at corresponding to the region of the first electrode 14 ' and has the shape roughly the same with the first electrode 14 ' but area is greater than the first electrode 14 '.The first elongated area 1213 is (the 3rd limit 106 and the 4th limit 107) extension from electrode zone 1215 (the first electronic pads 141 ' and the first extension electrode 142 ') to side.In the present embodiment, four the second elongated areas 1214 are from electrode zone 1215 (the first electronic pads 141 ' and the first extension electrode 142 ') (first side 104) and (Second Edge) 105 extensions backward forward.The first elongated area 1213 and 1214 tops, the second elongated area do not form the first electrode 14 '.
In another embodiment, as shown in Figure 3 C, light-emitting device 100 ' ' comprise the first electrode 14 " and one second electrode 15 ".The first electrode 14 " comprise one first electronic pads 141 " and one first extension electrode 142 ".The second electrode 15 " comprise one second electronic pads 151 ".The first extension electrode 142 " from the first electronic pads 141 " toward the second electronic pads 151 " and direction extend (toward the direction of Second Edge 105).In addition, barrier layer 121 comprises an electrode zone 1215 ' and multiple elongated area 1213 '.The electrode zone 1215 ' of barrier layer 121 is formed at corresponding to the first electrode 14 " region and have and the first electrode 14 " roughly the same shape but area is greater than the first electrode 14 ".Multiple elongated areas 1213 ' are about miter angle from electrode zone 1215 ' (the first electronic pads 141 ' and the first extension electrode 142 ') and extend to four side (104,105,106,107).1213 ' top, elongated area does not form the first electrode 14 ".
The first type semiconductor layer can be N-shaped semiconductor layer and Second-Type semiconductor layer can be p-type semiconductor, the first type semiconductor layer and Second-Type semiconductor layer and comprise a kind of material in a kind of material or AlInGaN, InGaN, AlGaN and the constituent material group of GaN institute being selected from AlGaAs, AlGaInP, AlInP and constituent material group of InGaP institute; Optionally, the first type semiconductor layer can be p-type semiconductor layer and Second-Type semiconductor layer can be N-shaped semiconductor; Active layer can comprise a kind of material in a kind of material or AlInGaN, InGaN, AlGaN and the constituent material group of GaN institute being selected from AlGaAs, AlInGaP, InGaP and constituent material group of AlInP institute.Active layer structure can be single heterojunction structure (single heterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; Or multi-layer quantum well (multi-quantum well DDH); MQW).Substrate comprises at least one material or other alternative material that are selected from GaAs (GaAs), gallium phosphide (GaP), germanium (Ge), sapphire, glass, diamond, carborundum (SiC), silicon, gallium nitride (GaN) and zinc oxide (ZnO) institute constituent material cohort and replaces it.
Fig. 4 is the exploded view of a bulb 30 of the present invention.Bulb 30 comprises a lampshade 21, lens 22, a light emitting module 24, a support plate 25, a heat dissipation element 26, a connection piece 27 and a circuit unit 28.Light emitting module 24 comprises a carrier 23 and multiple light-emitting device.Light-emitting device can be any above-mentioned mentioned light-emitting device 100 (100 ', 100 ").As shown in Figure 4, for example, 12 light-emitting devices are positioned on carrier 23, wherein comprise six red light-emitting devices and six blue light emitting device arrangements interlaced with each other and be electrically connected to each other (can be serial or parallel connection).Blue light emitting device comprises the fluorescent material light being sent with converting blue light light-emitting device placed on it.The light that blue light emitting device sends and the light of conversion are mixed to form a white light, and after the red light-emitting device of arranging in pairs or groups, make bulb 30 send the warm white that a colour temperature is 2400-3000K.
The cited each embodiment of the present invention is only in order to the present invention to be described, not in order to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.
Claims (16)
1. a manufacture method that forms light-emitting device, comprises:
One substrate is provided;
Form a ray structure on this substrate, this ray structure has an active layer;
Form a protective layer on this ray structure, this protective layer has one first thickness;
This protective layer of etching makes this protective layer have one second thickness to be less than this first thickness; And
This protective layer of patterning.
2. manufacture method as claimed in claim 1, wherein the difference of this first thickness and this second thickness is greater than
3. manufacture method as claimed in claim 1, before this protective layer of etching, also comprises with a laser and forms a groove in this substrate.
4. manufacture method as claimed in claim 1, wherein, the method for this this protective layer of etching comprises with this protective layer of acid solution wet etching.
5. manufacture method as claimed in claim 1, wherein, this second thickness between
6. manufacture method as claimed in claim 1, wherein, forms this ray structure and also comprises and sequentially form one first semiconductor layer, an active layer and one second semiconductor layer on this substrate; And before forming this protective layer, this ray structure of etching is to expose this first semiconductor layer of part.
7. manufacture method as claimed in claim 1, after this protective layer of patterning, also comprises and forms a transparency conducting layer on this protective layer and this ray structure; And form an electrode on this transparency conducting layer correspondence position at this protective layer.
8. a light-emitting device, comprises:
Substrate;
Ray structure is formed on this substrate, has first area and second area; And
Barrier layer is formed on this first area, and this barrier layer has a lower surface and a sidewall;
Wherein, the angle of this sidewall and this lower surface is between 10 °-70 °.
9. light-emitting device as claimed in claim 8, also comprise a transparency conducting layer, be formed on this sidewall of this barrier layer and this second area of this ray structure, wherein, the thickness that this transparency conducting layer is formed on this sidewall of this barrier layer is not more than 10% with the ratio that is formed on the difference of thickness of this second area of this ray structure and transparency conducting layer and is formed on the thickness of this sidewall of this barrier layer.
10. light-emitting device as claimed in claim 8, wherein, the thickness of this barrier layer is greater than
and be less than
11. light-emitting devices as claimed in claim 8, also comprise a transparency conducting layer, are formed on this barrier layer; And one first electrode, be formed at this transparency conducting layer on should the position of barrier layer, wherein, this first electrode and this barrier layer have roughly the same shape.
12. light-emitting devices as claimed in claim 11, wherein, this first electrode comprises the first electronic pads and extension electrode; This light-emitting device also comprises the second electrode, and wherein this second electrode comprises the second electronic pads; This extension electrode is the extension of the direction toward the second electronic pads from this first electronic pads.
13. light-emitting devices as claimed in claim 8, also comprise transparency conducting layer, are formed on this barrier layer; And electrode, be formed on this transparency conducting layer; Wherein this electrode comprises electronic pads and extension electrode; Wherein, this light-emitting device comprises four side; And wherein, this barrier layer comprises electrode zone and extends to this four side from this electrode zone corresponding to position and the elongated area of this electrode.
14. light-emitting devices as claimed in claim 8, this barrier layer comprises an insulating material and has a resistivity and is greater than 10
14Ω-cm.
15. light-emitting devices as claimed in claim 8, wherein, this substrate has a sloped sidewall.
16. light-emitting devices as claimed in claim 15, wherein, this sloped sidewall has a rough surface.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910572937.9A CN110289346B (en) | 2012-12-14 | 2012-12-14 | Method for forming light-emitting device and light-emitting device manufactured by same |
| CN201210545472.6A CN103872206B (en) | 2012-12-14 | 2012-12-14 | The manufacturing method of formation light emitting device and its made light emitting device |
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|---|---|---|---|
| CN201210545472.6A CN103872206B (en) | 2012-12-14 | 2012-12-14 | The manufacturing method of formation light emitting device and its made light emitting device |
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| CN104319323A (en) * | 2014-10-29 | 2015-01-28 | 华灿光电股份有限公司 | Light-emitting diode chip preparation method |
| CN111430511A (en) * | 2014-07-25 | 2020-07-17 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110289346B (en) | 2021-11-30 |
| CN103872206B (en) | 2019-10-25 |
| CN110289346A (en) | 2019-09-27 |
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