CN101901855A - Light-emitting element and manufacture method thereof - Google Patents
Light-emitting element and manufacture method thereof Download PDFInfo
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- CN101901855A CN101901855A CN2009101420095A CN200910142009A CN101901855A CN 101901855 A CN101901855 A CN 101901855A CN 2009101420095 A CN2009101420095 A CN 2009101420095A CN 200910142009 A CN200910142009 A CN 200910142009A CN 101901855 A CN101901855 A CN 101901855A
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- contact layer
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Abstract
The invention discloses a light-emitting element and a manufacture method thereof. The light-emitting element comprises a contact layer and a current spreading layer, wherein the local area of the contact layer has a roughening structure, and the local area has a flat structure; the current spreading layer is positioned on the contact layer, the local area of the current spreading layer has a roughening structure, and the local area has a flat structure so that the roughening structure area of the current spreading layer is completely stacked on the roughening structure area of the contact layer approximately. The light-emitting element of the invention has high light extraction efficiency and good current spreading effect.
Description
Technical field
The present invention relates to a kind of light-emitting component and preparation method thereof, particularly relate to a kind of light emitting diode construction that has wandering cloth (current spreading) effect of good electrical and high light extraction (light extraction) efficient simultaneously and preparation method thereof.
Background technology
Because the light-emitting diode good light electrical characteristics such as coloured light that have low power consumption, low heat emission amount, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can sends wavelength stabilization, so often be applied to the using light source of indicator light, photovoltaic of household electrical appliances, instrument and photoelectricity communication field etc.
In general light emitting diode construction, in order to make electrode and the semiconductor structure under it lower contact resistance is arranged, can therebetween form contact layer.When forming electrode on contact layer, the interface of electrode and contact layer has lower contact resistance and forms ohmic contact.Contact layer is than other semiconductor epitaxial layers, and for example limitation layer (cladding layer) has higher doping content.When forming ohmic contact between contact layer and the electrode, light-emitting diode has lower forward conducting voltage and higher luminous efficiency.Lumination of light emitting diode efficient mainly is the result after internal quantum and the two addition of external quantum efficiency.Generally speaking, internal quantum is relevant with material self character and extension quality; External quantum efficiency is light extraction efficient, and is relevant with the refractive index and the surface smoothness of material.In order to promote light extraction efficient, can utilize directly the grow up contact layer of surface coarsening of epitaxy technology, when the contact layer surface forms coarse surface, can reduce the light that sends by active layer and produce the probability of total reflection, and then light is extracted improved efficiency more than 30%.On contact layer, can form current spreading layer again increasing the effect that electric current scatters (current spreading), but when if the current spreading layer air spots is smooth, electric current scatters effect can be reduced.
The embodiment of the invention is finished after the following processing step, forms first electrode and second electrode again, promptly finishes light-emitting component.This light-emitting component can with other elements, be package carrier or circuit board for example, be combined to form light-emitting device (light-emitting apparatus).Fig. 5 is known light-emitting device schematic diagram, and as shown in Figure 5, light-emitting device 600 comprises time carrier (sub-mount) 60; Be positioned at the scolder 62 (solder) on the carrier 60 above-mentioned time; And electric connection structure 64.Light-emitting component 400 is fixed in light-emitting component 400 bonding on time carrier 60 by scolder 62, and first electrode 56 of light-emitting component 400 and second electrode 66 form with electric connection structure 64 and time carrier 60 respectively and electrically connect.Except above-mentioned inferior carrier 60, package carrier also can be lead frame (lead frame) or circuit structure inlay carrier (mounting carrier), with the circuit planning of the convenient light-emitting device that forms and improve its radiating effect.
Summary of the invention
The invention provides a kind of light-emitting component, have surface local alligatoring structure, this light-emitting component comprises: the semiconductor epitaxial structure; Contact layer is positioned on this semiconductor epitaxial structure, comprises an at least one alligatoring zone and a flat site; And current spreading layer, be positioned on this contact layer, comprise an at least one alligatoring zone and a flat site, wherein this contact layer alligatoring zone is corresponding haply with this current spreading layer alligatoring zone, and this contact layer flat site is corresponding haply with this current spreading layer flat site.
According to embodiments of the invention, this semiconductor epitaxial structure comprises one or more the material that is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon constitutes.
According to embodiments of the invention, this semiconductor epitaxial structure also comprises the first electrical semiconductor layer, active layer, and the second electrical semiconductor layer.
According to embodiments of the invention, this contact layer also comprises: smooth contact layer is positioned on this semiconductor epitaxial structure; And the alligatoring contact layer, be positioned on this smooth contact layer, comprise an at least one alligatoring zone and a flat site.
According to embodiments of the invention, this current spreading layer comprises and is selected from tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide) or titanium nitride (Titanium Nitride).
The present invention also provides a kind of method of making light-emitting component, and this light-emitting component has surface local alligatoring structure, and this method comprises: form the semiconductor epitaxial structure; Form smooth contact layer on this semiconductor epitaxial structure; Form pattern photoresist layer on this smooth contact layer; Form the alligatoring contact layer in this smooth contact layer not by the overlay area of this pattern photoresist layer on; And form current spreading layer on this alligatoring contact layer, wherein this current spreading layer is complied with the surface morphology of this alligatoring contact layer and is formed.
According to embodiments of the invention, this method removes this pattern photoresist layer after also being included in and forming this alligatoring contact layer.
According to embodiments of the invention, form the semiconductor epitaxial structure and also comprise: form the first electrical semiconductor layer; Forming active layer is positioned on this first electrical semiconductor layer; And the formation second electrical semiconductor layer is positioned on this active layer.
Light-emitting component according to the present invention has highlight extraction efficiency and the wandering cloth effect of good electrical.
Description of drawings
Fig. 1～Fig. 3 describes the technology of first embodiment of the invention light-emitting component.
Fig. 4 describes the structure of second embodiment of the invention light-emitting component.
Fig. 5 describes known light-emitting device schematic diagram.
Description of reference numerals
21: the growth substrate
22: the semiconductor epitaxial structure
23: the first electrical semiconductor layers
24: active layer
25: the second electrical semiconductor layers
26: smooth contact layer
27: patterning photoresist layer
28: the alligatoring contact layer
29: current spreading layer
56: the first electrodes
60: inferior carrier
62: scolder
64: electric connection structure
66: the second electrodes
400: light-emitting component
600: light-emitting device
Embodiment
Below cooperate Fig. 1～Fig. 3 to describe the technology of first embodiment of the invention light-emitting component.At first, please refer to Fig. 1, comprise growth substrate 21, its material for example can be GaAs, silicon, carborundum, sapphire, indium phosphide, gallium phosphide, aluminium nitride or gallium nitride etc.Then, on growth substrate 21, form semiconductor epitaxial structure 22.Semiconductor epitaxial structure 22 forms by epitaxy technique, for example organic metal vapour deposition epitaxy (MOCVD), liquid phase epitaxial method (LPE) or molecular beam epitaxy (MBE) homepitaxy technology.Its material comprises one or more the material that is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon constitutes.This semiconductor epitaxial structure 22 comprises the first electrical semiconductor layer 23 at least, active layer 24, and the second electrical semiconductor layer 25.In addition, the active layer 24 of present embodiment can be piled up by for example homostyructure, single heterojunction structure, double-heterostructure or multiple quantum trap structure and be formed.
Then, after forming smooth contact layer 26 on the semiconductor epitaxial structure 22, with photo anti-corrosion agent material, for example oxide or nitride, form patterning photoresist layer 27 on smooth contact layer 26, make smooth contact layer subregion be patterned the photoresist layer and cover.Then, be not patterned on the zone that the photoresist layer covers at smooth contact layer 26 and form alligatoring contact layer 28 by epitaxy technique.After removing patterning photoresist layer 27, form local alligatoring contact layer, as the structure of Fig. 2.At last, the zone that reaches original patterning photoresist layer covering again on local alligatoring contact layer forms current spreading layer 29 with evaporation mode or chemical vapour deposition technique (chemical vapor deposition), and its material can be tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide) or titanium nitride (Titanium Nitride).This current spreading layer upper surface regional area is the alligatoring structure, and regional area is a flat structures, and the surface morphology of complying with contact layer owing to current spreading layer forms, and the surface morphology of being formed is identical with contact layer haply, as shown in Figure 3.Wherein, the alligatoring structural region has highlight extraction efficiency, and the flat structures zone has the wandering cloth effect of good electrical.
Fig. 4 is the structure of second embodiment of the invention light-emitting component.Compare with above-mentioned first embodiment, its difference does not remove patterning photoresist layer 27 after being that smooth contact layer 26 is not patterned the zone formation alligatoring contact layer 28 of photoresist layer covering.On patterning photoresist layer 27 and alligatoring contact layer 28, form current spreading layer 29 again with evaporation mode or chemical vapour deposition technique (chemical vapor deposition), this current spreading layer upper surface regional area is the alligatoring structure, regional area is a flat structures, and the surface morphology of complying with contact layer owing to current spreading layer forms, the surface morphology of being formed is identical with contact layer haply, as shown in Figure 4.Wherein, the alligatoring structural region has highlight extraction efficiency, and the flat structures zone has the wandering cloth effect of good electrical.
The embodiment that more than provides is in order to the different technical characterictic of description the present invention, but according to notion of the present invention, it can comprise or apply to technical scope widely.It is noted that, embodiment is only in order to disclose the ad hoc approach of technology of the present invention, device, composition, manufacturing and use, not in order to limit the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention, when doing a little change and retouching.Therefore, protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (9)
1. a light-emitting component has surface local alligatoring structure, and this light-emitting component comprises:
The semiconductor epitaxial structure;
Contact layer is positioned on this semiconductor epitaxial structure, comprises an at least one alligatoring zone and a flat site; And
Current spreading layer, be positioned on this contact layer, comprise an at least one alligatoring zone and a flat site, wherein this contact layer alligatoring zone is corresponding haply with this current spreading layer alligatoring zone, and this contact layer flat site is corresponding haply with this current spreading layer flat site.
2. light-emitting component as claimed in claim 1, wherein this semiconductor epitaxial structure comprises one or more the material that is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon constitutes.
3. light-emitting component as claimed in claim 1, wherein this semiconductor epitaxial structure also comprises the first electrical semiconductor layer, active layer, and the second electrical semiconductor layer.
4. light-emitting component as claimed in claim 1, wherein this contact layer also comprises:
Smooth contact layer is positioned on this semiconductor epitaxial structure; And
The alligatoring contact layer is positioned on this smooth contact layer, comprises an at least one alligatoring zone and a flat site.
5. light-emitting component as claimed in claim 1, wherein this current spreading layer comprises one or more the material that is selected from tin indium oxide, indium oxide, tin oxide, cadmium tin, zinc oxide, magnesium oxide or group that titanium nitride constitutes.
6. method of making light-emitting component, this light-emitting component has surface local alligatoring structure, and this method comprises:
Form the semiconductor epitaxial structure;
Form smooth contact layer on this semiconductor epitaxial structure;
Form pattern photoresist layer on this smooth contact layer;
Form the alligatoring contact layer in this smooth contact layer not by the overlay area of this pattern photoresist layer on; And
Form current spreading layer on this alligatoring contact layer, wherein this current spreading layer is complied with the surface morphology of this alligatoring contact layer and is formed.
7. the method for making light-emitting component as claimed in claim 6 also is included in and removes this pattern photoresist layer after forming this alligatoring contact layer.
8. the method for making light-emitting component as claimed in claim 6 wherein forms the semiconductor epitaxial structure and also comprises:
Form the first electrical semiconductor layer;
Forming active layer is positioned on this first electrical semiconductor layer; And
Forming the second electrical semiconductor layer is positioned on this active layer.
9. the method for making light-emitting component as claimed in claim 6, wherein this current spreading layer comprises one or more the material that is selected from tin indium oxide, indium oxide, tin oxide, cadmium tin, zinc oxide, magnesium oxide or group that titanium nitride constitutes.
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| CN200910142009.5A CN101901855B (en) | 2009-05-27 | 2009-05-27 | Light-emitting component and preparation method thereof |
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| CN200910142009.5A CN101901855B (en) | 2009-05-27 | 2009-05-27 | Light-emitting component and preparation method thereof |
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| CN101901855B CN101901855B (en) | 2015-11-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638084A (en) * | 2013-11-11 | 2015-05-20 | 晶元光电股份有限公司 | Light-emitting element |
| CN105009311A (en) * | 2012-12-14 | 2015-10-28 | 首尔伟傲世有限公司 | Light-emitting diode with improved light extraction efficiency |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674306A (en) * | 2004-03-26 | 2005-09-28 | 晶元光电股份有限公司 | Nitride luminous element with high luminous efficiency |
| CN100356593C (en) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | High efficient nitride series light-emitting element |
| CN100585883C (en) * | 2004-07-29 | 2010-01-27 | 晶元光电股份有限公司 | Luminous element with high light enucleation efficiency |
| JP4670489B2 (en) * | 2005-06-06 | 2011-04-13 | 日立電線株式会社 | Light emitting diode and manufacturing method thereof |
| CN100573940C (en) * | 2005-09-06 | 2009-12-23 | 昭和电工株式会社 | Gallium-nitride-based compound semiconductor light emitting element and manufacture method thereof |
| CN1971951A (en) * | 2005-11-21 | 2007-05-30 | 晶元光电股份有限公司 | Highlight extraction efficiency light-emitting component |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105009311A (en) * | 2012-12-14 | 2015-10-28 | 首尔伟傲世有限公司 | Light-emitting diode with improved light extraction efficiency |
| US9978910B2 (en) | 2012-12-14 | 2018-05-22 | Seoul Viosys Co., Ltd. | Light-emitting diode with improved light extraction efficiency |
| US10243109B2 (en) | 2012-12-14 | 2019-03-26 | Seoul Viosys Co., Ltd. | Light-emitting diode with improved light extraction efficiency |
| CN104638084A (en) * | 2013-11-11 | 2015-05-20 | 晶元光电股份有限公司 | Light-emitting element |
| CN104638084B (en) * | 2013-11-11 | 2019-07-02 | 晶元光电股份有限公司 | Light-emitting component |
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| CN101901855B (en) | 2015-11-25 |
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