KR20100035846A - Light emitting device and method for fabricating the same - Google Patents
Light emitting device and method for fabricating the same Download PDFInfo
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- KR20100035846A KR20100035846A KR1020080095207A KR20080095207A KR20100035846A KR 20100035846 A KR20100035846 A KR 20100035846A KR 1020080095207 A KR1020080095207 A KR 1020080095207A KR 20080095207 A KR20080095207 A KR 20080095207A KR 20100035846 A KR20100035846 A KR 20100035846A
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Abstract
A light emitting device and a method of manufacturing the same are disclosed. This light emitting element includes a substrate. A light emitting structure of the compound semiconductor is positioned over an area of the substrate, and includes an upper semiconductor layer of a first conductivity type, an active layer, and a lower semiconductor layer of a second conductivity type. Meanwhile, a separate layer of the first conductivity type semiconductor spaced apart from the light emitting structure is positioned above another region of the substrate. A metal material structure is positioned between the light emitting structure and the separated layer and the substrate to electrically connect the lower semiconductor layer and the separated layer. Meanwhile, an insulating structure covers the side surface of the light emitting structure to insulate the metal material structure from the upper semiconductor layer and the active layer. In addition, a first bonding pad is formed on the light emitting structure, and a second bonding pad is formed on the separated layer. Accordingly, it is possible to prevent an electrical short circuit of the light emitting structure due to the metal etching by-product and to provide a light emitting device having improved adhesion of bonding pads.
Light Emitting Diode, Substrate Separation, Sacrificial Substrate, Bonding Pad, Gallium Nitride
Description
The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly to a light emitting device and a method of manufacturing the same to prevent the electrical short-circuit of the light emitting diode is generated by the metal by-products during the etching process and to enhance the adhesion of the bonding pads It is about.
In general, nitrides of Group III elements such as gallium nitride (GaN) and gallium aluminum nitride (AlGaN) have excellent thermal stability and have a direct transition energy band structure. It is attracting much attention as a substance. In particular, blue and green light emitting devices using indium gallium nitride (GaInN) have been used in various applications such as large-scale color flat panel display devices, traffic lights, indoor lighting, high density light sources, high resolution output systems, and optical communications.
Such nitride semiconductors of group III elements are difficult to fabricate homogeneous substrates capable of growing them. Is grown through. As a hetero substrate, a sapphire substrate having a hexagonal structure is mainly used. Also, in recent years, after growing nitride semiconductor layers on a sacrificial substrate such as sapphire, a technique of manufacturing a light emitting diode having a vertical structure by separating the sacrificial substrate by a laser lift-off (LLO) process is disclosed. Is being studied.
1 is a cross-sectional view illustrating a vertical light emitting diode according to the prior art.
Referring to FIG. 1, the vertical light emitting diode includes a
Compound semiconductor layers are generally grown on a sacrificial substrate (not shown), such as a sapphire substrate, using metalorganic chemical vapor deposition or the like. Thereafter, the metal
However, since the conductive substrate generally has a large coefficient of thermal expansion in comparison with a sacrificial substrate such as sapphire, warpage of the conductive substrate occurs when the sacrificial substrate is separated from the compound semiconductor layers. The warpage of the substrate increases not only the separation process of the sacrificial substrate but also subsequent processes such as separation of the light emitting cell regions, formation of electrode pads, dicing processes, and the like, thereby increasing device defects.
In order to improve this problem, a method of using an insulating substrate having the same or similar thermal expansion coefficient as that of the sacrificial substrate instead of the conductive substrate has been proposed as a bonding substrate. When using an insulated substrate, in addition to the
In order to expose the
In addition, the
SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting device capable of preventing an electrical short circuit between an N-type semiconductor layer and a P-type semiconductor layer due to etching by-products of a metal layer, and a method of manufacturing the same.
Another object of the present invention is to provide a light emitting device capable of enhancing the adhesion of electrode pads and a method of manufacturing the same.
The present invention provides a light emitting device and a method of manufacturing the same. A light emitting device according to an aspect of the present invention includes a substrate; A light emitting structure of a compound semiconductor positioned on an area of the substrate and including an upper semiconductor layer of a first conductivity type, an active layer, and a lower semiconductor layer of a second conductivity type; A separate layer of a first conductivity type semiconductor positioned over another region of the substrate and spaced apart from the light emitting structure; A metal material structure positioned between the light emitting structure and the separated layer and the substrate to electrically connect the lower semiconductor layer and the separated layer; And an insulating structure covering the side surface of the light emitting structure to insulate the metal material structure from the upper semiconductor layer and the active layer.
According to one aspect of the present invention, since the side surface of the light emitting structure is covered by the insulating structure, it is possible to prevent the electrical short circuit of the light emitting structure by the metal by-products.
The light emitting device may further include a first electrode pad formed on the light emitting structure and a second electrode pad formed on the separated layer. Since the second electrode pad is formed on the separated layer of the first conductivity type semiconductor, adhesion strength is enhanced as compared with the case where the second electrode pad is formed on the modified metal layer.
Meanwhile, a reflective metal layer may be interposed between the lower surface of the lower semiconductor layer and the metal material structure. The reflective metal layer reflects light generated from the light emitting structure to improve light emission efficiency. The reflective metal layer may be formed of, for example, silver (Ag), aluminum (Al), silver alloy, or aluminum alloy in the light emitting structure. In addition, an ohmic metal layer may be interposed between the reflective metal layer and the lower semiconductor layer. In addition, the metal material structure may include a protective metal layer covering the reflective metal layer. The protective metal layer prevents the reflective metal layer from being exposed to the atmosphere.
In addition, the light emitting device may further include a bonding metal bonding the metal material structure and the substrate. Bonding metals enhance adhesion of the substrate and transfer heat generated from the light emitting structure toward the substrate.
Meanwhile, the metal material structure may be connected to the separated layer through the insulating structure. To this end, the insulating structure has a through hole exposing the separated layer.
The separated layer may be positioned at the same level as the upper semiconductor layer. In addition, the separated layer may be formed of the same material as a material forming at least a portion of the upper semiconductor layer. Thus, the separated layer may be formed from the compound semiconductor layer grown by the same process as the upper semiconductor layer, and does not require a separate process for growing the separated layer.
The separated layer may be positioned on some regions around the light emitting structure or on some regions, but is not limited thereto, and may continuously surround the light emitting structure.
The insulating structure may extend to a lower surface of the lower semiconductor layer and be interposed between the lower semiconductor layer and the metal material structure. In addition, the insulating structure may cover the periphery of the reflective metal layer.
The insulating structure may include at least one of SiO 2 , SiN, MgO, TaO, TiO 2 , and a polymer.
Meanwhile, an upper surface of the upper semiconductor layer may include a roughened surface. The roughened surface improves the extraction efficiency of light generated by the light emitting structure.
A light emitting device manufacturing method according to another aspect of the present invention includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers on a sacrificial substrate. Forming compound semiconductor layers, wherein the first conductivity-type semiconductor layer is located closer to the sacrificial substrate; Patterning the compound semiconductor layers to form a mesa, wherein the first conductivity type semiconductor layer is exposed around the mesa; Forming an insulating structure covering the first conductive semiconductor layer and the active layer exposed on the side of the mesa, wherein a portion of the first conductive semiconductor layer around the mesa is exposed; Forming a metal material structure electrically connecting the mesa and a portion of the first conductivity type semiconductor layer exposed around the mesa; Bonding a substrate on the metal material structure; Removing the sacrificial substrate to expose the first conductivity type semiconductor layer; And patterning the exposed first conductive semiconductor layer to separate the partial region around the mesa from the first conductive semiconductor layer on the mesa.
According to this aspect, since the mesa side surface is covered with the insulating structure, it can prevent that a 1st conductivity type semiconductor layer and a 2nd conductivity type semiconductor layer are electrically short-circuited by a metal by-product. Moreover, during certain etching processes, the metal layer can be prevented from being exposed, thus preventing the generation of metal byproducts.
The light emitting device manufacturing method includes: forming a first electrode pad on a first conductive semiconductor layer on the mesa; And forming a second electrode pad on the partial region around the mesa. Since the second electrode pad is formed on the first conductive semiconductor layer in the same manner as the first electrode pad, the adhesive force of the second electrode pad is enhanced as compared with the case where the second electrode pad is formed on the modified metal layer.
Prior to forming the metal material structure, a reflective metal layer may be formed on the mesa. Furthermore, the reflective metal layer may be formed before forming the insulating structure. The reflective metal layer reflects light generated by the active layer to improve luminous efficiency. Meanwhile, an ohmic contact layer may be formed before forming the reflective metal layer.
Meanwhile, the metal material structure may include a protective metal layer protecting the reflective metal layer. The protective metal layer prevents the reflective metal layer from being exposed to the outside.
In some embodiments of the present invention, forming the insulating structure includes: forming an insulating layer covering the mesa and a first conductive semiconductor layer exposed around the mesa; And patterning the insulating layer to form a through hole exposing the upper portion of the mesa and exposing a portion of the first conductivity-type semiconductor layer around the mesa. A plurality of through holes may be formed.
In some embodiments of the present invention, forming the insulating structure includes: forming an insulating layer covering the mesa and a first conductive semiconductor layer exposed around the mesa; And patterning the insulating layer to expose the upper portion of the mesa, and to expose a portion of the first conductive semiconductor layer around the mesa, wherein the portion may surround the mesa.
The insulating structure may cover an edge of the upper surface of the mesa. In addition, when the reflective metal layer is formed, the insulating structure may be formed to cover an edge of the reflective metal layer.
In addition, in some embodiments of the present disclosure, after the sacrificial substrate is removed, a roughened surface may be formed on a surface of the exposed first conductive semiconductor layer. The roughened surface may be formed before or after forming the electrode pads.
The first conductive semiconductor layer is formed of an n-type gallium nitride compound semiconductor layer, and the second conductive semiconductor layer is formed of a p-type gallium nitride compound semiconductor layer. In addition, the active layer may be formed of a gallium nitride compound semiconductor layer, such as indium gallium nitride, and may have a single quantum well structure or a multiple quantum well structure.
According to the present invention, it is possible to provide a light emitting device capable of preventing an electrical short circuit between an N-type semiconductor layer and a P-type semiconductor layer by etching by-products of the metal layer, and a method of manufacturing the same. In addition, it is possible to enhance the adhesion of the electrode pads.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
2 is a cross-sectional view illustrating a light emitting device according to an embodiment of the present invention.
Referring to FIG. 2, the light emitting device includes a
The
The
The
On the other hand, the separated
The separated
The
Meanwhile, a
The
An insulating
Meanwhile, the insulating
The
Meanwhile, a
Wires may be bonded to the first and
In this embodiment, it is preferable that the first conductivity type is N type and the second conductivity type is P type. In general, an N-type compound semiconductor, in particular, an N-type gallium nitride-based compound semiconductor has a lower specific resistance than a P-type gallium nitride-based compound semiconductor, so that transparent electrodes formed on the P-type compound semiconductor are generally omitted to disperse current. can do.
3 to 11 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
Referring to FIG. 3, compound semiconductor layers are formed on the
The first and second conductivity-type semiconductor layers 55 and 59 may be formed in a single layer or multiple layers, respectively. In addition, the
The compound semiconductor layers may be formed of a III-N-based compound semiconductor, and may be grown on the
Meanwhile, before forming the compound semiconductor layers, a buffer layer (not shown) may be formed. The buffer layer is adopted to mitigate lattice mismatch between the
Referring to FIG. 4, the compound semiconductor layers are patterned to form
Referring to FIG. 5, an insulating
The insulating
Meanwhile, before or after the
Referring to FIG. 6, a
Referring to FIG. 7, a
Referring to FIG. 8, a
Referring to FIG. 9, the
Referring to FIG. 11, the exposed first
Referring to FIG. 12, a
According to the present invention, by adopting the insulating
Although the embodiments of the present invention have been described above by way of example, the present invention is not limited to the above-described embodiments and may be variously modified and changed by those skilled in the art without departing from the spirit of the present invention. . Such modifications and variations are included in the scope of the present invention as defined in the following claims.
1 is a cross-sectional view illustrating a conventional vertical light emitting diode.
2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
3 to 12 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
Claims (19)
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