CN101901855B - Light-emitting component and preparation method thereof - Google Patents
Light-emitting component and preparation method thereof Download PDFInfo
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- CN101901855B CN101901855B CN200910142009.5A CN200910142009A CN101901855B CN 101901855 B CN101901855 B CN 101901855B CN 200910142009 A CN200910142009 A CN 200910142009A CN 101901855 B CN101901855 B CN 101901855B
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Abstract
The invention discloses a kind of light-emitting component and manufacture method thereof.This light-emitting component comprises contact layer, and its regional area is alligatoring structure, and regional area is flat structures; And current spreading layer, be positioned on contact layer, its regional area is alligatoring structure, and regional area is flat structures, and current spreading layer alligatoring structural region is stacked on contact layer alligatoring structural region haply completely.Light-emitting component according to the present invention has highlight extraction efficiency and good electrical and to scatter cloth effect.
Description
Technical field
The present invention relates to a kind of light-emitting component and preparation method thereof, particularly relate to one and there is scatter cloth (currentspreading) effect and high light of good electrical simultaneously extract light emitting diode construction of (lightextraction) efficiency and preparation method thereof.
Background technology
Due to light-emitting diode there is low power consumption, low heat dissipating capacity, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can send the good photoelectric characteristic such as coloured light of wavelength stabilization, is therefore often applied to household electrical appliances, the indicator light of instrument, the using light source of photovoltaic and photoelectric communication field etc.
In general light emitting diode construction, in order to make electrode and the semiconductor structure under it have lower contact resistance, therebetween can form contact layer.When forming electrode on contact layer, the interface of electrode and contact layer has lower contact resistance and forms ohmic contact.Contact layer is other semiconductor epitaxial layers comparatively, such as, limit to layer (claddinglayer), have higher doping content.When forming ohmic contact between contact layer and electrode, light-emitting diode has lower forward conducting voltage and higher luminous efficiency.The result of light-emitting diode luminous efficiency mainly after the addition of both internal quantum and external quantum efficiency.Generally speaking, internal quantum is relevant with material self character and extension quality; External quantum efficiency and light extraction efficiency, relevant with the refractive index of material and surface smoothness.In order to promote light extraction efficiency, epitaxy technology can be utilized directly to grow up the contact layer of surface coarsening, the probability that the light sent by active layer produces total reflection can be reduced when contact layer surface is formed as coarse surface, and then light is extracted improved efficiency more than 30%.Current spreading layer can be formed again scatter the effect of (currentspreading) to increase electric current on contact layer, if but current spreading layer uneven surface time, electric current scatters effect can be reduced.
After the embodiment of the present invention completes following processing step, then form the first electrode and the second electrode, namely complete light-emitting component.This light-emitting component can with other elements, be such as package carrier or circuit board, be combined to form light-emitting device (light-emittingapparatus).Fig. 5 is known light-emitting device schematic diagram, and as shown in Figure 5, light-emitting device 600 comprises time carrier (sub-mount) 60; Be positioned at the solder 62 (solder) on above-mentioned carrier 60; And electric connection structure 64.Light-emitting component 400 bonding is fixed on time carrier 60 by solder 62 by light-emitting component 400, and the first electrode 56 of light-emitting component 400 and the second electrode 66 are formed with electric connection structure 64 and secondary carrier 60 respectively and be electrically connected.Except above-mentioned secondary carrier 60, package carrier also can be lead frame (leadframe) or circuit structure inlay carrier (mountingcarrier), plan with the circuit of the light-emitting device facilitating formation and improve its radiating effect.
Summary of the invention
The invention provides a kind of light-emitting component, have surperficial Local Coarsening structure, this light-emitting component comprises: semiconductor extension structure; Contact layer, is positioned on this semiconductor extension structure, comprises at least one alligatoring region and a flat site; And current spreading layer, be positioned on this contact layer, comprise at least one alligatoring region and a flat site, wherein this contact layer alligatoring region is corresponding haply with this current spreading layer alligatoring region, and this contact layer flat site is corresponding haply with this current spreading layer flat site.
According to embodiments of the invention, this semiconductor extension structure comprise be selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and silicon form one or more material of group.
According to embodiments of the invention, this semiconductor extension structure also comprises the first conductivity type semiconductor layer, active layer, and the second conductivity type semiconductor layer.
According to embodiments of the invention, this contact layer also comprises: even contact layer, is positioned on this semiconductor extension structure; And alligatoring contact layer, be positioned on this even contact layer, comprise at least one alligatoring region and a flat site.
According to embodiments of the invention, this current spreading layer comprises and is selected from tin indium oxide (IndiumTinOxide), indium oxide (IndiumOxide), tin oxide (TinOxide), cadmium tin (CadmiumTinOxide), zinc oxide (ZincOxide), magnesium oxide (MagnesiumOxide) or titanium nitride (TitaniumNitride).
Present invention also offers a kind of method making light-emitting component, this light-emitting component has surperficial Local Coarsening structure, and the method comprises: form semiconductor extension structure; Form even contact layer on this semiconductor extension structure; Form pattern photoresist oxidant layer on this even contact layer; Form alligatoring contact layer in this even contact layer not by the overlay area of this pattern photoresist oxidant layer; And form current spreading layer on this alligatoring contact layer, wherein this current spreading layer is complied with the surface morphology of this alligatoring contact layer and is formed.
According to embodiments of the invention, the method removes this pattern photoresist oxidant layer after being also included in and forming this alligatoring contact layer.
According to embodiments of the invention, form semiconductor extension structure and also comprise: form the first conductivity type semiconductor layer; Being formed with active layer is positioned on this first conductivity type semiconductor layer; And formation the second conductivity type semiconductor layer is positioned on this active layer.
Light-emitting component according to the present invention has highlight extraction efficiency and good electrical and to scatter cloth effect.
Accompanying drawing explanation
Fig. 1 ~ Fig. 3 describes the technique of first embodiment of the invention light-emitting component.
Fig. 4 describes the structure of second embodiment of the invention light-emitting component.
Fig. 5 describes known light-emitting device schematic diagram.
Description of reference numerals
21: growth substrate
22: semiconductor extension structure
23: the first conductivity type semiconductor layer
24: active layer
25: the second conductivity type semiconductor layer
26: even contact layer
27: patterning photoresist oxidant layer
28: alligatoring contact layer
29: current spreading layer
56: the first electrodes
60: secondary carrier
62: solder
64: electric connection structure
66: the second electrodes
400: light-emitting component
600: light-emitting device
Embodiment
Fig. 1 ~ Fig. 3 is below coordinated to describe the technique of first embodiment of the invention light-emitting component.First, please refer to Fig. 1, comprise growth substrate 21, its material such as can be GaAs, silicon, carborundum, sapphire, indium phosphide, gallium phosphide, aluminium nitride or gallium nitride etc.Then, growth substrate 21 forms semiconductor extension structure 22.Semiconductor extension structure 22 formed by epitaxy technique, such as organometallic vapor deposition epitaxy (MOCVD), liquid phase epitaxial method (LPE) or molecular beam epitaxy (MBE) homepitaxy technique.Its material comprise be selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and silicon form one or more material of group.This semiconductor extension structure 22 at least comprises the first conductivity type semiconductor layer 23, active layer 24, and the second conductivity type semiconductor layer 25.In addition, the active layer 24 of the present embodiment can form by such as homostyructure, single heterojunction structure, double-heterostructure or multiple quantum trap structure institute is stacking.
Then, form even contact layer 26 on semiconductor extension structure 22 after, with photo anti-corrosion agent material, such as oxide or nitride, form patterning photoresist oxidant layer 27 on even contact layer 26, make even contact layer segment region be patterned photoresist oxidant layer and cover.Then, be not patterned on region that photoresist oxidant layer covers at even contact layer 26 and form alligatoring contact layer 28 by epitaxy technique.After removing patterning photoresist oxidant layer 27, form Local Coarsening contact layer, as the structure of Fig. 2.Finally, again on Local Coarsening contact layer and the region that covers of original patterning photoresist oxidant layer form current spreading layer 29 with evaporation mode or chemical vapour deposition technique (chemicalvapordeposition), its material can be tin indium oxide (IndiumTinOxide), indium oxide (IndiumOxide), tin oxide (TinOxide), cadmium tin (CadmiumTinOxide), zinc oxide (ZincOxide), magnesium oxide (MagnesiumOxide) or titanium nitride (TitaniumNitride).This current spreading layer upper surface regional area is alligatoring structure, and regional area is flat structures, and complies with the surface morphology of contact layer due to current spreading layer and formed, and the surface morphology formed is identical with contact layer haply, as shown in Figure 3.Wherein, alligatoring structural region has highlight extraction efficiency, and flat structures region has good electrical and to scatter cloth effect.
Fig. 4 is the structure of second embodiment of the invention light-emitting component.Compare with above-mentioned first embodiment, its difference does not remove patterning photoresist oxidant layer 27 after being that even contact layer 26 is not patterned the region formation alligatoring contact layer 28 of photoresist oxidant layer covering.Current spreading layer 29 is formed with evaporation mode or chemical vapour deposition technique (chemicalvapordeposition) again on patterning photoresist oxidant layer 27 and alligatoring contact layer 28, this current spreading layer upper surface regional area is alligatoring structure, regional area is flat structures, and comply with the surface morphology of contact layer due to current spreading layer and formed, the surface morphology formed is identical with contact layer haply, as shown in Figure 4.Wherein, alligatoring structural region has highlight extraction efficiency, and flat structures region has good electrical and to scatter cloth effect.
The embodiment more than provided is in order to describe the different technical characteristic of the present invention, but according to concept of the present invention, it can comprise or apply to technical scope widely.It is noted that, embodiment only in order to disclose the ad hoc approach of present invention process, device, composition, manufacture and use, not in order to limit the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention, when doing a little change and retouching.Therefore, protection scope of the present invention, when being as the criterion depending on the appended claim person of defining.
Claims (11)
1. a light-emitting component, have surperficial Local Coarsening structure, this light-emitting component comprises:
Semiconductor extension structure;
Contact layer, is positioned on this semiconductor extension structure, comprises at least one alligatoring region and a flat site; And
Current spreading layer, be positioned on this contact layer, comprise at least one alligatoring region and a flat site, wherein and the alligatoring region of this current spreading layer is corresponding and both surface morphology is roughly the same in the alligatoring region of this contact layer, the flat site of this contact layer is corresponding with the flat site of this current spreading layer and both surface morphology is roughly the same, and the alligatoring region of this contact layer is formed by epitaxy technique.
2. light-emitting component as claimed in claim 1, wherein this semiconductor extension structure comprise be selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and silicon form one or more material of group.
3. light-emitting component as claimed in claim 1, wherein this semiconductor extension structure also comprises the first conductivity type semiconductor layer, active layer, and the second conductivity type semiconductor layer.
4. light-emitting component as claimed in claim 1, wherein this flat site comprises a patterning photoresist oxidant layer, and this patterning photoresist oxidant layer is made up of oxide or nitride.
5. light-emitting component as claimed in claim 1, wherein this contact layer also comprises:
Even contact layer, is positioned on this semiconductor extension structure; And
Alligatoring contact layer, is positioned on this even contact layer.
6. light-emitting component as claimed in claim 1, wherein this current spreading layer comprise be selected from tin indium oxide, indium oxide, tin oxide, cadmium tin, zinc oxide, magnesium oxide or titanium nitride form one or more material of group.
7. make a method for light-emitting component, this light-emitting component has surperficial Local Coarsening structure, and the method comprises:
Form semiconductor extension structure;
Form even contact layer on this semiconductor extension structure;
Form pattern photoresist oxidant layer on this even contact layer;
Form alligatoring contact layer in this even contact layer not by the overlay area of this pattern photoresist oxidant layer; And
Form current spreading layer on this alligatoring contact layer, the surface morphology and being formed that wherein this current spreading layer complies with this alligatoring contact layer and this even contact layer is used to be had and this alligatoring contact layer and the identical haply surface morphology of this even contact layer; Wherein formed this alligatoring contact layer in this even contact layer the overlay area of this pattern photoresist oxidant layer is formed by epitaxy technique.
8. the method making light-emitting component as claimed in claim 7, is also included in after forming this alligatoring contact layer and removes this pattern photoresist oxidant layer.
9. the method making light-emitting component as claimed in claim 7, wherein forms semiconductor extension structure and also comprises:
Form the first conductivity type semiconductor layer;
Being formed with active layer is positioned on this first conductivity type semiconductor layer; And
Form the second conductivity type semiconductor layer and be positioned at this active layer.
10. the as claimed in claim 7 method making light-emitting component, wherein this current spreading layer comprise be selected from tin indium oxide, indium oxide, tin oxide, cadmium tin, zinc oxide, magnesium oxide or titanium nitride form one or more material of group.
11. methods making light-emitting component as claimed in claim 7, wherein form current spreading layer is formed with evaporation mode or chemical vapour deposition technique on this alligatoring contact layer.
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| CN101901855B true CN101901855B (en) | 2015-11-25 |
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| KR102027301B1 (en) * | 2012-12-14 | 2019-10-01 | 서울바이오시스 주식회사 | Enhancement in the light extraction efficiencies of Light Emitting Diode by adoption of reflection layer |
| CN104638084B (en) * | 2013-11-11 | 2019-07-02 | 晶元光电股份有限公司 | Light-emitting component |
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| CN1674306A (en) * | 2004-03-26 | 2005-09-28 | 晶元光电股份有限公司 | Nitride luminous element with high luminous efficiency |
| CN1728410A (en) * | 2004-07-29 | 2006-02-01 | 晶元光电股份有限公司 | Luminous element with high light enucleation efficiency |
| CN1877874A (en) * | 2005-06-06 | 2006-12-13 | 日立电线株式会社 | Light emitting diode and manufacturing method thereof |
| CN1971951A (en) * | 2005-11-21 | 2007-05-30 | 晶元光电股份有限公司 | Highlight extraction efficiency light-emitting component |
| CN100356593C (en) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | High efficient nitride series light-emitting element |
| CN101258614A (en) * | 2005-09-06 | 2008-09-03 | 昭和电工株式会社 | Gallium-nitride-based compound semiconductor light emitting element and its manufacturing method |
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- 2009-05-27 CN CN200910142009.5A patent/CN101901855B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674306A (en) * | 2004-03-26 | 2005-09-28 | 晶元光电股份有限公司 | Nitride luminous element with high luminous efficiency |
| CN100356593C (en) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | High efficient nitride series light-emitting element |
| CN1728410A (en) * | 2004-07-29 | 2006-02-01 | 晶元光电股份有限公司 | Luminous element with high light enucleation efficiency |
| CN1877874A (en) * | 2005-06-06 | 2006-12-13 | 日立电线株式会社 | Light emitting diode and manufacturing method thereof |
| CN101258614A (en) * | 2005-09-06 | 2008-09-03 | 昭和电工株式会社 | Gallium-nitride-based compound semiconductor light emitting element and its manufacturing method |
| CN1971951A (en) * | 2005-11-21 | 2007-05-30 | 晶元光电股份有限公司 | Highlight extraction efficiency light-emitting component |
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