CN103633217B - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN103633217B CN103633217B CN201210307939.3A CN201210307939A CN103633217B CN 103633217 B CN103633217 B CN 103633217B CN 201210307939 A CN201210307939 A CN 201210307939A CN 103633217 B CN103633217 B CN 103633217B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
Abstract
The present invention discloses a light-emitting device, it includes：One substrate；And an active layer, it is formed on substrate and includes one first well layer, one second well layer and a barrier layer, barrier layer is between the first, second well layer；Wherein, barrier layer includes a first area, a second area and a third region, and first area is adjacent to the first well layer and third region adjacent in the second well layer, and second area includes antimony between first area and third region.
Description
Technical field
The present invention relates to a kind of light-emitting devices, are to be related to a kind of light-emitting device of the barrier layer containing antimony more specifically.
Background technology
Light-emitting diode (Light Emitting Diode in solid-state light emitting element；LED) have low power consumption,
Lower calorific value, operation lifetime length, impact resistance, small, reaction speed be fast and the good light such as the coloured light that can send out wavelength stabilization
Electrical characteristics, therefore it is commonly applied to the fields such as household electrical appliances, the indicator light of instrument and photovoltaic.
The luminous intensity of general light-emitting diode can increase with temperature and be declined, and different materials have it is different bright
How the decline degree of degree solves the problems, such as that this is an important subject under discussion.
In addition, the above light emitting diode can form a light-emitting device further combined with a carrier (sub-mount), example
Such as light bulb.The light-emitting device includes a secondary carrier with an at least circuit；An at least solder (solder) is located at above-mentioned time
On carrier, above-mentioned light emitting diode is fixed on time carrier by this solder and is made on the substrate and time carrier of light emitting diode
Circuit formed electrical connection；And an electric connection structure, the electronic pads to be electrically connected light emitting diode and the electricity on time carrier
Road；Wherein, above-mentioned secondary carrier can be that lead frame (lead frame) or large scale inlay substrate (mounting
Substrate), to facilitate the circuit of light-emitting device to plan and improve its heat dissipation effect.
Invention content
To solve the above problems, the present invention provides a light-emitting device, it includes：One substrate；And an active layer, it is formed in base
On plate and include one first well layer, one second well layer and a barrier layer, barrier layer is between the first, second well layer；Wherein, hinder
Parietal layer includes a first area, a second area and a third region, and first area is adjacent to the first well layer and third region is adjacent
It is bordering on the second well layer, second area includes Sb between first area and third region.
Description of the drawings
Fig. 1 is a sectional view of the light-emitting device of the present invention；
Fig. 2 is a sectional view of the active layer of the present invention；
Fig. 3 A, Fig. 3 B show the schematic diagram of the second kenel of semiconductor；
Fig. 4 A, Fig. 4 B show the schematic diagram of the first kenel of semiconductor；
Fig. 5 A- Fig. 5 C are the manufacturing method sectional view of the light-emitting device of the present invention.
Main element symbol description
100：Light-emitting device
10：Substrate
11：First type semiconductor layer
12：Active layer
121：First well layer
122、122’：Barrier layer
1221：First area
1222：Second area
1223：Third region
122：Second well layer
13：First type semiconductor layer
14：Second electrode
15：First electrode
20：P-side electrode
20：Growth substrate
21：N-type semiconductor layer
22：Active layer
23：P-type semiconductor layer
24：Window layers
25：Adhesive layer
26：Permanent substrate
27：N-side electrode
28：P-side electrode
Specific implementation mode
Following embodiment will be along with description of the drawings idea of the invention, in attached drawing or explanation, similar or identical portion
Divide and use identical label, and in the accompanying drawings, the shape or thickness of element can be expanded or shunk.It needs it is specifically intended that figure
In the element that is not painted or describes, can be the form being familiar with known to the personage of this skill.
Fig. 1 is the schematic diagram of a light-emitting device 100 of one embodiment of the invention.
Light-emitting device 100 includes:One substrate 10；One first type semiconductor layer 11；One active layer 12 is formed in the first type half
In conductor layer 11；And one second type semiconductor layer 13 be formed on active layer 12.Light-emitting device 100 further includes a first electrode 15
It is formed in the first type semiconductor layer 11 and a second electrode 14 is formed in the second type semiconductor layer 13.As shown in the picture, originally
Light-emitting device 100 in embodiment is a horizontal configuration, but is alternatively a Vertical Structure or other different form structures
Design.
Active layer 12 is a multiple quantum trap (MQW) structure, including multiple well layer and multiple barrier layers, well layer and barrier layer
Arrangement interlaced with each other.With reference to Fig. 2, in one embodiment, active layer 12 includes one first well layer 121, one second well layer 123 and one
Barrier layer 122.Barrier layer 122 is between the first, second well layer 121,123 and includes a first area 1221, one second area
Domain 1222 and a third region 1223.First area 1221 is in direct contact adjacent to the first well layer 121 and with the first well layer 121；The
Three regions 1223 are in direct contact adjacent to the second well layer 123 and with the second well layer 123；Second area 1222 is located at first area 1221
Between third region 1223, and include antimony (Sb), wherein the concentration of antimony (Sb) is between 1017-1020cm-3.Fig. 2 is only with one layer
Barrier layer shows that it includes first, second and third regions 1221,1222,1223.In the present embodiment, multiple barrier layers 122
All include first, second and third region 1221,1222,1223, but the barrier layer being in direct contact with the first type semiconductor layer 11
122 ' its thickness are more than barrier layer 122 and do not include antimony (Sb), and the barrier layer being in direct contact with the second type semiconductor layer 13
122 ' its thickness are more than barrier layer 122 and do not include antimony (Sb).Furthermore in the present embodiment, only second area contains in barrier layer
There is antimony (Sb).However, selectively, among the first, second or third region in barrier layer is any, antimony (Sb) can be contained.Example
Such as, antimony is contained in first area but antimony is not contained in second, third region；Antimony is contained in second, third region and first area is not contained
Antimony；Or first, second, third region all contain antimony (Sb).In the present embodiment, barrier layer can be improved in the antimony (Sb) in barrier layer
Conductive strips energy rank can limit to high-temperature electronic in well layer at an elevated temperature, to increase the probability combined with hole,
Therefore, the brightness of light-emitting device will not decline because temperature increases.Selectively, in barrier layer can contain phosphorus (P), arsenic (As) or
Bismuth (Bi).
In one embodiment, in barrier layer 122, the material in first area 1221 and third region 1223 is AlGaInP
(AlGaInP) and the material of second area 1222 is phosphorus aluminium antimonide gallium indium (AlGaInPSb), wherein antimony (Sb) More content and phosphorus
(P) ratio of More's content is less than 1/10000.In another embodiment, first area 1221 and the material in third region 1223 are
The material 1222 of aluminum gallium arsenide (AlGaAs) and second area is InGaP (InGaP).Furthermore second area 1222 has one
Ranging fromThickness (d)；Barrier layer 122 has a rangeThickness (D), and d/D range be situated between
Between 0.2-0.75.Barrier layer 122 can be single layer, i.e., between first, second and third region 1221,1222,1223
There is no interface presence.In one embodiment, the energy band of the first area 1221 of barrier layer 122 and second area 1222 is second type
The energy band of the third region 1223 of heterojunction (as shown in Fig. 3 A, Fig. 3 B) and barrier layer 122 and second area 1222 is the
Two type heterojunctions (as shown in Fig. 3 A, Fig. 3 B)；And the energy band of the first area 1221 of barrier layer 122 and neighbouring well layer 121
For the third region 1223 of the first type heterojunction (as shown in Fig. 4 A, Fig. 4 B) and barrier layer 122 and neighbouring well layer 123
Energy band be the first type heterojunction (as shown in Fig. 4 A, Fig. 4 B).Second type heterojunction expression first area 1221 (or third
Region 1223) band gap it is Chong Die with the band-gap section of second area 1222, this means, conduction band energy rank of second area 1222
(EC2) it is higher than the conduction band energy (E in first area 1221 (or third region 1223)C1)；The Valence-band of second area 1222
Rank (EV2) it is higher than the Valence-band (E in first area 1221 (or third region 1223)V1), but less than first area 1221 (or the
Three regions 1223) conduction band energy (EC1), as shown in Figure 3A.Second type heterojunction is alternatively first area 1221 (or
Three regions 1223) conduction band energy rank (EC1’) it is higher than the conduction band energy (E of second area 1222C2’)；First area 1221
Valence-band rank (the E in (or third region 1223)V1’) it is higher than the Valence-band (E of second area 1222V2’), but it is less than the secondth area
Conduction band energy (the E in domain 1222C2’)。
First type heterojunction indicates the band gap and well layer 121 (or 123) in first area 1221 (or third region 1223)
Band gap be all overlapped, this means, conduction band energy rank (E of well layer 121 (or 123)C1’) higher than (or the third of first area 1221
Region 1223) conduction band energy (EC2’)；Valence-band rank (the E of well layer 121 (or 123)V1’) less than first area 1221 (or
Third region 1223) Valence-band (EV2’), as shown in Figure 4 A.The first kenel of semiconductor is alternatively first area 1221 (or
Three regions 1223) conduction band energy rank (EC2) it is higher than the conduction band energy (E of well layer 121 (or 123)C1)；First area 1221
Valence-band rank (the E in (or third region 1223)V2) it is less than the Valence-band (E of well layer 121 (or 123)V1), as shown in Figure 4 B.
First type semiconductor layer 11 can be n-type semiconductor layer, and include selected from AlGaAs, AlGaInP, AlInP and
One in a kind of material or constituent material group of AlInGaN, InGaN, AlGaN and GaN institute in constituent material group of InGaP institutes
Kind material；Barrier layer 122 may include one kind in constituent material group of AlGaAs, AlInGaP, InGaP and AlInP institute
Material or a kind of material in constituent material group of AlInGaN, InGaN, AlGaN and GaN institute, well layer 121,123 may include selecting
From in constituent material group of AlGaAs, AlInGaP, InGaP and AlInP institute a kind of material or AlInGaN, InGaN,
A kind of material in constituent material group of AlGaN and GaN institutes；First type semiconductor layer 11 can be p-type semiconductor layer, and include choosing
From in constituent material group of AlGaAs, AlGaInP, AlInP and InGaP institute a kind of material or AlInGaN, InGaN,
A kind of material in constituent material group of AlGaN and GaN institutes；Substrate 10 includes then selected from GaAs (GaAs), gallium phosphide
(GaP), germanium (Ge), sapphire, glass, diamond, silicon carbide (SiC), silicon, gallium nitride (GaN) and zinc oxide (ZnO) are constituted
At least one of material group material or other alternative materials replace it.
Embodiment
Embodiment one
As shown in Figure 5A, the lamination that shines include the n-type semiconductor layer 21 of AlInP, multi layer quantum well active layer 22 and
The p-type semiconductor layer 23 of AlInP is grown up in order in the growth substrate 20 of GaAs.The semiconductor window layers 24 of GaP are grown up in p
In type semiconductor layer 23.As shown in Figure 5 B, using an adhesive layer 25 by luminous bonding laminates to a permanent substrate 26, move again later
Except growth substrate 20.As shown in Figure 5 C, it carries out an etching step and exposes semiconductor window layers to remove the luminous lamination of part
24.N-side electrode 27 is formed in n-type semiconductor layer 21 and p-side electrode 28 is in semiconductor window layers 24.In the present embodiment,
Active layer 22 includes the well layer and barrier layer of multiple interaction arrangements.In addition to direct with n-type semiconductor layer 21 and p-type semiconductor layer 23
The barrier layer 122 ' of contact is (as shown in Figure 2) not to include Sb, each barrier layer 122 (as shown in Figure 2) all comprising AlGaInP the
One region 1221, the second area 1222 of AlGaInPSb and AlGaInP third region 1223.In the mistake of growth barrier layer 122
Cheng Zhong is passed through hydrogen phosphide (PH at the beginning3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl) and trimethyl indium (TMIn) at
The first area 1221 of long AlGaInP, later in the reactant of script (hydrogen phosphide (PH3), trimethyl gallium (TMGa), trimethyl
Aluminium (TMAl) and trimethyl indium (TMIn)) it is passed through trimethylantimony (TMSb) again with the second area 1222 for the AlGaInPSb that grows up, most
After be passed through hydrogen phosphide (PH3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl) and trimethyl indium (TMIn) be with the AlGaInP that grows up
Third region 1223.In the present embodiment, the thickness of the second area 1222 of AlGaInPSb isEach barrier layer
Thickness isPermanent substrate 26 is sapphire, and adhesive layer 25 is an Al2O3/SiOxDouble-layer structure.
Embodiment two
The light-emitting device of embodiment two has similar structure with the light-emitting device of embodiment one, in addition to each barrier layer
The thickness of second area is
Embodiment three
The light-emitting device of embodiment three has similar structure with the light-emitting device of embodiment one, in addition to each barrier layer
The thickness of second area is
Comparative example one
The light-emitting device of comparative example one has similar structure with the light-emitting device of embodiment one, in addition in growth barrier layer
During, it is not passed through trimethylantimony (TMSb).Therefore, barrier layer flood is AlGaInP.
Table one
Table one shows experimental result.The temperature coefficient of embodiment one, embodiment two and the light-emitting device of embodiment three
(Temperatur coefficient, Tc) is more than the temperature coefficient of the light-emitting device of comparative example one, is shown in barrier layer
Specific region be added Sb, can effectively limit to high-temperature electronic, to improve the Percentage bound of electron hole.Therefore, embodiment one, reality
The case where apply the brightness of the light-emitting device of example two and embodiment three reduces with temperature raising, can be enhanced.Further, experiment knot
Fruit also shows when the thickness of the second area of barrier layer isWith preferable temperature coefficient.
Each embodiment cited by the present invention is only to illustrate the present invention, is not used to limit the scope of the present invention.It is any
People's any modification apparent easy to know made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (6)
1. a kind of light-emitting device, including:
Substrate；And
Active layer is formed on the substrate and includes the first well layer, the second well layer and barrier layer, the barrier layer be located at this first,
Between second well layer；
Wherein, the barrier layer include first area, second area and third region, the first area be adjacent to first well layer and
In second well layer, which is located between the first area and the third region third region adjacent, and includes antimony,
Antimony is not contained in the first area and/or the third region, wherein the first area includes AlGaInP and the second area packet
Phosphorous aluminium antimonide gallium indium, in the phosphorus aluminium antimonide gallium indium, the ratio of antimony content and phosphorus content is less than 1/10000.
2. light-emitting device as described in claim 1, wherein the barrier layer is single layer.
3. light-emitting device as described in claim 1, wherein there is the second area thickness d, the barrier layer to have a thickness
The range of D, d/D are between 0.2~0.75.
4. light-emitting device as described in claim 1, wherein the concentration of the antimony of the second area is between 1017-1020cm-3。
5. light-emitting device as described in claim 1, the wherein second area have a thickness betweenAnd
6. light-emitting device as described in claim 1, the wherein first area and/or the third region do not include antimony.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210307939.3A CN103633217B (en) | 2012-08-27 | 2012-08-27 | Light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210307939.3A CN103633217B (en) | 2012-08-27 | 2012-08-27 | Light-emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN103633217A CN103633217A (en) | 2014-03-12 |
| CN103633217B true CN103633217B (en) | 2018-07-27 |
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| CN201210307939.3A Active CN103633217B (en) | 2012-08-27 | 2012-08-27 | Light-emitting device |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9306115B1 (en) * | 2015-02-10 | 2016-04-05 | Epistar Corporation | Light-emitting device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1737998A (en) * | 2005-08-25 | 2006-02-22 | 中国科学院上海微系统与信息技术研究所 | The doping and the method for III-V family aluminum contained compound that direct or indirect band gap is formed |
| CN101390214A (en) * | 2004-10-08 | 2009-03-18 | 加利福尼亚大学董事会 | High efficiency light-emitting diodes |
| CN102169931A (en) * | 2010-02-25 | 2011-08-31 | 株式会社东芝 | Semiconductor light emitting device and method of manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927412B2 (en) * | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
| KR100482511B1 (en) * | 2004-02-05 | 2005-04-14 | 에피밸리 주식회사 | Ⅲ-Nitride compound semiconductor light emitting device |
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2012
- 2012-08-27 CN CN201210307939.3A patent/CN103633217B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101390214A (en) * | 2004-10-08 | 2009-03-18 | 加利福尼亚大学董事会 | High efficiency light-emitting diodes |
| CN1737998A (en) * | 2005-08-25 | 2006-02-22 | 中国科学院上海微系统与信息技术研究所 | The doping and the method for III-V family aluminum contained compound that direct or indirect band gap is formed |
| CN102169931A (en) * | 2010-02-25 | 2011-08-31 | 株式会社东芝 | Semiconductor light emitting device and method of manufacturing the same |
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| CN103633217A (en) | 2014-03-12 |
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