CN103633217A - Light-emitting apparatus - Google Patents

Light-emitting apparatus Download PDF

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Publication number
CN103633217A
CN103633217A CN201210307939.3A CN201210307939A CN103633217A CN 103633217 A CN103633217 A CN 103633217A CN 201210307939 A CN201210307939 A CN 201210307939A CN 103633217 A CN103633217 A CN 103633217A
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area
layer
light
region
barrier layer
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CN103633217B (en
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李荣仁
黄建富
李世昌
陈怡名
林宣乐
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Disclosed in the invention is a light-emitting apparatus comprising a substrate and an active layer. The active layer formed at the substrate includes a first well layer, a second well layer and a barrier layer arranged between the first well layer and the second well layer. The barrier layer includes a first region, a second region and a third region; the first region is adjacent to the first well layer and the third region is adjacent to the second well layer; and the second region is arranged between the first region and third region and contains antimony.

Description

Light-emitting device
Technical field
The present invention relates to a kind of light-emitting device, more specifically, relate to a kind of light-emitting device of the barrier layer that contains antimony.
Background technology
Light-emitting diode in solid-state light emitting element (Light Emitting Diode; LED) the good photoelectric characteristic such as coloured light that has low power consumption, lower calorific value, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can sends wavelength stabilization, is therefore often applied to the fields such as the indicator light of household electrical appliances, instrument and photovoltaic.
The luminous intensity of general light-emitting diode can raise and to decline with temperature, and different materials has the decline degree of different brightness, and how head it off is an important subject under discussion.
In addition, above light-emitting diode can form a light-emitting device further combined with a carrier (sub-mount), for example bulb.Described light-emitting device comprises an inferior carrier with at least one circuit; At least one scolder (solder) is positioned on above-mentioned carrier, by this scolder, above-mentioned light-emitting diode is fixed on time carrier and the substrate of light-emitting diode is electrically connected to the circuit formation on time carrier; And an electric connection structure, to be electrically connected to the electronic pads of light-emitting diode and the circuit on time carrier; Wherein, above-mentioned inferior carrier can be that lead frame (lead frame) or large scale are inlayed substrate (mounting substrate), to facilitate the circuit of light-emitting device to plan and to improve its radiating effect.
Summary of the invention
For addressing the above problem, the invention provides a light-emitting device, it comprises: a substrate; And an active layer, be formed on substrate and comprise one first trap layer, one second trap layer and a barrier layer, barrier layer is between first, second trap layer; Wherein, barrier layer comprises a first area, a second area and one the 3rd region, and first area is adjacent to the first trap layer and the 3rd region adjacent in the second trap layer, and second area, between first area and the 3rd region, and comprises Sb.
Accompanying drawing explanation
Fig. 1 is a cutaway view of a light-emitting device of the present invention;
Fig. 2 is a cutaway view of active layer of the present invention;
Fig. 3 A, Fig. 3 B show the schematic diagram of semiconductor the second kenel;
Fig. 4 A, Fig. 4 B show the schematic diagram of semiconductor the first kenel;
The manufacture method cutaway view that Fig. 5 A-Fig. 5 C is light-emitting device of the present invention.
Main element symbol description
100: light-emitting device
10: substrate
11: the first type semiconductor layer
12: active layer
121: the first trap layers
122,122 ': barrier layer
1221: first area
1222: second area
1223: the three regions
122: the second trap layers
13: the first type semiconductor layer
14: the second electrodes
15: the first electrodes
20:p lateral electrode
20: growth substrate
21:n type semiconductor layer
22: active layer
23:p type semiconductor layer
24: window layers
25: tack coat
26: permanent substrate
27:n lateral electrode
28:p lateral electrode
Embodiment
Following examples will be accompanied by accompanying drawing concept of the present invention will be described, in accompanying drawing or explanation, similar or identical part is used identical label, and in the accompanying drawings, the shape of element or thickness can expand or dwindle.Need pay special attention to, the element that does not illustrate in figure or describe, can be the form of haveing the knack of known to the personage of this skill.
Fig. 1 is the schematic diagram of a light-emitting device 100 of one embodiment of the invention.
Light-emitting device 100 comprises: a substrate 10; One first type semiconductor layer 11; One active layer 12 is formed in the first type semiconductor layer 11; And one Second-Type semiconductor layer 13 be formed on active layer 12.Light-emitting device 100 more comprises one first electrode 15 and is formed in the first type semiconductor layer 11 and one second electrode 14 is formed on Second-Type semiconductor layer 13.As shown in drawings, the light-emitting device 100 in the present embodiment is a horizontal configuration, but also can be the design of a rectilinear structure or other multi-form structures.
Active layer 12 is a multiple quantum trap (MQW) structure, comprises a plurality of trap layers and a plurality of barrier layer, the arrangement interlaced with each other of trap layer and barrier layer.With reference to Fig. 2, in one embodiment, active layer 12 comprises one first trap layer 121, one second trap layer 123 and a barrier layer 122.Barrier layer 122 is positioned between first, second trap layer 121,123 and comprises a first area 1221, a second area 1222 and one the 3rd region 1223.First area 1221 is close to the first trap layers 121 and directly contacts with the first trap layer 121; The 3rd region 1223 is close to the second trap layers 123 and directly contacts with the second trap layer 123; Second area 1222, between first area 1221 and the 3rd region 1223, and comprises antimony (Sb), and wherein, the concentration of antimony (Sb) is between 10 17-10 20cm -3.Fig. 2 only shows that with one deck barrier layer it comprises first, second and the 3rd region 121,122,123.In the present embodiment, a plurality of barrier layers 122 all comprise first, second and the 3rd region 121,122,123, but barrier layer 122 ' its thickness directly contacting with the first type semiconductor layer 11 is greater than barrier layer 122 and does not comprise antimony (Sb), and barrier layer 122 ' its thickness directly contacting with Second-Type semiconductor layer 13 is greater than barrier layer 122 and does not comprise antimony (Sb).Moreover in the present embodiment, in barrier layer, only second area contains antimony (Sb).Yet, optionally, among first, second in barrier layer or the 3rd region are any, can contain antimony (Sb).For example, antimony is contained but antimony is not contained in second, third region in first area; Antimony is contained in second, third region and antimony is not contained in first area; Or first, second, third region all contain antimony (Sb).In the present embodiment, the antimony in barrier layer (Sb) can improve the conductive strips energy rank of barrier layer, in the situation that temperature raises, can limit to high-temperature electronic in trap layer, to increase the probability of being combined with hole, therefore, the brightness of light-emitting device can not raise and decline by Yin Wendu.Optionally, in barrier layer, can contain phosphorus (P), arsenic (As) or bismuth (Bi).
In one embodiment, in barrier layer 122, the material in first area 1221 and the 3rd region 1223 is that the material 1222 of AlGaInP (AlGaInP) and second area is phosphorus aluminium antimonide gallium indium (AlGaInPSb), and wherein the ratio of antimony (Sb) More's content and phosphorus (P) More content is less than 1/10000.In another embodiment, the material in first area 1221 and the 3rd region 1223 is that the material 1222 of aluminum gallium arsenide (AlGaAs) and second area is InGaP (InGaP).Moreover second area 1222 has a scope and is
Figure BDA00002059031100041
thickness (d); Barrier layer 122 has a scope thickness (D), and the scope of d/D is between 0.2-0.75.Barrier layer 122 can be individual layer, and first, second and the 3rd region 1221,1222,1223 do not have interface each other.In one embodiment, the first area 1221 of barrier layer 122 and being with as semiconductor the second kenel (as shown in Fig. 3 A, Fig. 3 B) of second area 1222, and the 3rd region 1223 of barrier layer 122 and being with as semiconductor the second kenel (as shown in Fig. 3 A, Fig. 3 B) of second area 1222; And the first area 1221 of barrier layer 122 and being with as semiconductor the first kenel (as shown in 4A, Fig. 4 B) of the trap layer 121 being close to, and the 3rd region 1223 of barrier layer 122 and being with as semiconductor the first kenel (as shown in 4A, Fig. 4 B) of the trap layer 123 being close to.Semiconductor the second kenel represents that the band gap of first area 1221 (or the 3rd region 1223) and the band gap of second area 1222 overlap each other, this means, the conductive strips energy rank (E of second area 1222 c2) higher than the conductive strips energy (E in first area 1221 (or the 3rd region 1223) c1); Energy rank, the conduction band (E of second area 1222 v2) higher than the conduction band energy (E in first area 1221 (or the 3rd region 1223) v1), but be less than the conductive strips energy (E in first area 1221 (or the 3rd region 1223) c1), as shown in Figure 3A.Semiconductor the second kenel also can be the conductive strips energy rank (E in first area 1221 (or the 3rd region 1223) c1 ') higher than the conductive strips energy (E of second area 1222 c2 '); Energy rank, the conduction band (E of first area 1221 (or the 3rd region 1223) v1 ') higher than the conduction band energy (E of second area 1222 v2 '), but be less than the conductive strips energy (E of second area 1222 c2 ').
Semiconductor the first kenel represent the band gap of first area 1221 (or the 3rd region 1223) and the band gap of trap layer 121 (or 123) all overlapping, this means, conductive strips energy rank (E of trap layer 121 (or 123) c2) higher than the conductive strips energy (E in first area 1221 (or the 3rd region 1223) c1); Energy rank, the conduction band (E of trap layer 121 (or 123) v2) lower than the conduction band energy (E in first area 1221 (or the 3rd region 1223) v1), as shown in Figure 4 A.Semiconductor the first kenel also can be the conductive strips energy rank (E in first area 1221 (or the 3rd region 1223) c1 ') higher than the conductive strips energy (E of trap layer 121 (or 123) c2 '); Energy rank, the conduction band (E of first area 1221 (or the 3rd region 1223) v1 ') lower than the conduction band energy (E of trap layer 121 (or 123) v2 '), as shown in Figure 4 B.
The first type semiconductor layer 11 can be N-shaped semiconductor layer, and comprises a kind of material in a kind of material of being selected from AlGaAs, AlGaInP, AlInP and constituent material group of InGaP institute or AlInGaN, InGaN, AlGaN JiGaNSuo constituent material group; Barrier layer 122 can comprise a kind of material, trap layer 121,123 in a kind of material of being selected from AlGaAs, AlInGaP, InGaP and constituent material group of AlInP institute or AlInGaN, InGaN, AlGaN JiGaNSuo constituent material group can comprise a kind of material in a kind of material of being selected from AlGaAs, AlInGaP, InGaP and constituent material group of AlInP institute or AlInGaN, InGaN, AlGaN JiGaNSuo constituent material group; The first type semiconductor layer 11 can be p-type semiconductor layer, and comprises a kind of material in a kind of material of being selected from AlGaAs, AlGaInP, AlInP and constituent material group of InGaP institute or AlInGaN, InGaN, AlGaN JiGaNSuo constituent material group; 10 of substrates comprise at least one material or other alternative material that are selected from GaAs (GaAs), gallium phosphide (GaP), germanium (Ge), sapphire, glass, diamond, carborundum (SiC), silicon, gallium nitride (GaN) and zinc oxide (ZnO) institute constituent material cohort and replace it.
Embodiment
embodiment mono-
As shown in Figure 5A, the N-shaped semiconductor layer 21 that luminous lamination comprises AlInP, the active layer 22 of multi layer quantum well and the p-type semiconductor layer 23 of AlInP are grown up in order on the growth substrate 20 of GaAs.The semiconductor window layer 24 of GaP is grown up on p-type semiconductor layer 23.As shown in Figure 5 B, utilize a tack coat 25 that luminous lamination is bonded to a permanent substrate 26, remove again afterwards growth substrate 20.As shown in Figure 5 C, carry out an etching step and expose semiconductor window layer 24 to remove the luminous lamination of part.Form n lateral electrode 27 on N-shaped semiconductor layer 21 and p lateral electrode 28 on semiconductor window layer 24.In the present embodiment, active layer 22 comprises a plurality of mutual arrangements trap layer and barrier layer.Except the barrier layer 122 ' (as shown in Figure 2) directly contacting with p-type semiconductor layer 23 with N-shaped semiconductor layer 21 does not comprise Sb, each barrier layer 122 (as shown in Figure 2) all comprises the 3rd region 1223 of the first area 1221 of AlGaInP, the second area 1222 of AlGaInPSb and AlGaInP.In the process of growth barrier layer 122, pass at the beginning hydrogen phosphide (PH 3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl) and trimethyl indium (TMIn) be with the first area 1221 of the AlGaInP that grows up, afterwards in reactant (hydrogen phosphide (PH originally 3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl) and trimethyl indium (TMIn)) pass into again trimethylantimony (TMSb) with the second area 1222 of the AlGaInPSb that grows up, finally pass into hydrogen phosphide (PH 3), trimethyl gallium (TMGa), trimethyl aluminium (TMAl) and trimethyl indium (TMIn) be with the 3rd region 1223 of the AlGaInP that grows up.In the present embodiment, the thickness of the second area 1222 of AlGaInPSb is
Figure BDA00002059031100051
the thickness of each barrier layer is permanent substrate 26 is sapphire, and tack coat 25 is an Al 2o 3/ SiO xdouble-decker.
embodiment bis-
The light-emitting device of embodiment bis-has similar structure to the light-emitting device of embodiment mono-, except the thickness of the second area of each barrier layer is
Figure BDA00002059031100061
embodiment tri-
The light-emitting device of embodiment tri-has similar structure to the light-emitting device of embodiment mono-, except the thickness of the second area of each barrier layer is
Figure BDA00002059031100062
comparative example one
The light-emitting device of comparative example one has similar structure to the light-emitting device of embodiment mono-, in the process at growth barrier layer, does not pass into trimethylantimony (TMSb).Therefore, the whole layer of barrier layer is AlGaInP.
Table one
Table one shows experimental result.Temperature coefficient (the Temperatur coefficient of the light-emitting device of embodiment mono-, embodiment bis-and embodiment tri-, Tc) be greater than the temperature coefficient of the light-emitting device of comparative example one, its specific region being shown in barrier layer adds Sb, can effectively limit to high-temperature electronic, to improve the combination rate of electron hole.Therefore, the situation that the brightness of the light-emitting device of embodiment mono-, embodiment bis-and embodiment tri-raises and reduces with temperature, can be enhanced.Further, experimental result also shows that the thickness of the second area of working as barrier layer is
Figure BDA00002059031100064
there is preferably temperature coefficient.
Cited each embodiment of the present invention is only in order to the present invention to be described, not in order to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither disengaging spirit of the present invention and scope.

Claims (6)

1. a light-emitting device, comprises:
Substrate; And
Active layer, is formed on this substrate and comprises the first trap layer, the second trap layer and barrier layer, this barrier layer this first, between this second trap layer;
Wherein, this barrier layer comprises first area, second area and the 3rd ，Gai first area, region and is adjacent to this first trap layer and the 3rd region adjacent in this second trap layer, and this second area, between this first area and the 3rd region, and comprises antimony.
2. light-emitting device as claimed in claim 1, wherein, this barrier layer is individual layer.
3. light-emitting device as claimed in claim 1, wherein, this second area has a thickness d, and this barrier layer has a thickness D, and the scope of d/D is between 0.2-0.64.
4. light-emitting device as claimed in claim 1, wherein, this first area comprises AlGaInP and this second area comprises phosphorus aluminium antimonide gallium indium.
5. light-emitting device as claimed in claim 4, wherein, in phosphorus aluminium antimonide gallium indium, antimony content is less than 1/10000 with the ratio of phosphorus content.
6. light-emitting device as claimed in claim 1, wherein, the concentration of antimony is between 10 17-10 20cm -3.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038456A (en) * 2015-02-10 2020-12-04 晶元光电股份有限公司 Light emitting element

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20040135136A1 (en) * 2002-11-21 2004-07-15 Takashi Takahashi Semiconductor light emitter
CN1737998A (en) * 2005-08-25 2006-02-22 中国科学院上海微系统与信息技术研究所 The doping and the method for III-V family aluminum contained compound that direct or indirect band gap is formed
US20080149917A1 (en) * 2004-02-05 2008-06-26 Epivalley Co., Ltd Iii-Nitride Compound Semiconductor Light Emitting Device
CN101390214A (en) * 2004-10-08 2009-03-18 加利福尼亚大学董事会 High efficiency light-emitting diodes
CN102169931A (en) * 2010-02-25 2011-08-31 株式会社东芝 Semiconductor light emitting device and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040135136A1 (en) * 2002-11-21 2004-07-15 Takashi Takahashi Semiconductor light emitter
US20080149917A1 (en) * 2004-02-05 2008-06-26 Epivalley Co., Ltd Iii-Nitride Compound Semiconductor Light Emitting Device
CN101390214A (en) * 2004-10-08 2009-03-18 加利福尼亚大学董事会 High efficiency light-emitting diodes
CN1737998A (en) * 2005-08-25 2006-02-22 中国科学院上海微系统与信息技术研究所 The doping and the method for III-V family aluminum contained compound that direct or indirect band gap is formed
CN102169931A (en) * 2010-02-25 2011-08-31 株式会社东芝 Semiconductor light emitting device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038456A (en) * 2015-02-10 2020-12-04 晶元光电股份有限公司 Light emitting element

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