CN105720138B - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
- Publication number
- CN105720138B CN105720138B CN201610095213.6A CN201610095213A CN105720138B CN 105720138 B CN105720138 B CN 105720138B CN 201610095213 A CN201610095213 A CN 201610095213A CN 105720138 B CN105720138 B CN 105720138B
- Authority
- CN
- China
- Prior art keywords
- articulamentum
- metal
- electrode
- emitting diode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008033 biological extinction Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of light emitting diodes with three-dimensional expansion electrode and preparation method thereof, its structure includes the first articulamentum, luminescent layer, second articulamentum, and it is respectively formed in the first metal electrode and the second metal electrode on first articulamentum and the second articulamentum, first metal electrode includes electrode body and at least one outwardly extending metal extension, the metal extension and the surface incomplete contact between of the first articulamentum, increase the distance of the first metal extension and the luminescent layer, the extinction of metal electrode can be reduced, promote light-emitting diode efficiency, the surface area of surface metal can be increased by the expansion electrode of three-dimensional structure simultaneously, and then increase the heat dissipation area of element, make thermal energy caused by element that can faster be exported, reduce the loss of the efficiency and reliability of element.
Description
Technical field
The present invention relates to light emitting semiconductor device, specially a kind of light emitting diode and its making side with expansion electrode
Method.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of light emitting semiconductor device, utilizes half
Conductor P-N junction electroluminescence principles are made.The advantages that LED is with the high and low power consumption of its brightness, long lifespan, small power, becomes new one
For light source first choice.
The electrode of current most light emitting diode uses the design of two-dimensional structure, specially tightly attaches to electric current biography
Conducting shell (TCL)/p, n-type semiconductor layer surface.In large-sized light emitting diode, in order to allow electric current have conduction farther out away from
From electrode section increases extension pattern (finger) design that strip (or cyclic annular, netted etc.) extends, and equally tightly attaches to
TCL/p, n-type semiconductor layer surface.But since the metal material of electrode structure is light tight, it can stop and/or extinction is certain
The light of degree, leads to the luminous efficiency of light emitting diode to reduce.Fig. 1 is that the light emitting diode that electrode has expansion structure is illustrated
Figure.
Invention content
In view of the above-mentioned problems, the present invention provides a kind of light emitting diode with expansion electrode and preparation method thereof, it should
Expansion electrode and the surface incomplete contact between for being disposed below articulamentum, increase the distance of expansion electrode and luminescent layer, can be effective
Light is reduced by the absorption of expansion electrode.
Technical proposal that the invention solves the above-mentioned problems is：Light emitting diode, including the first articulamentum, luminescent layer, second
Articulamentum and the first metal electrode being respectively formed on first articulamentum and the second articulamentum and the second metal electricity
Pole, first metal electrode include electrode body and at least one outwardly extending metal extension, the metal extension
With the surface incomplete contact between of the first articulamentum, increase the first metal extension and the distance of the luminescent layer.
Preferably, first articulamentum includes the first semiconductor and current conducting layer, and second articulamentum includes the
Two semiconductor layers.In some embodiments, it is also possible to the first articulamentum is the first semiconductor layer.
Preferably, there is gap between the metal extension and first articulamentum.
Preferably, the metal extension is hanging adjacent to the side part of the first articulamentum.
Preferably, the metal extension is metal wire, is had there are two contact point, first make contact to be located at the electrode master
Body, the second contact point are located on the surface of first articulamentum, intermediate hanging.
Invention also provides a kind of production method of light emitting diode, including formed the first articulamentum, luminescent layer and
Secondth connection, and the first metal electrode and the second metal electricity are made on the surface of the first articulamentum and the second articulamentum respectively
Pole, wherein the first metal electrode of the formation includes electrode body and at least one outwardly extending metal extension, it is described
The surface incomplete contact between of metal extension and the first articulamentum, increase the first metal extension and the luminescent layer away from
From.
Preferably, first metal electrode is obtained by following method：It is made on the surface of the first articulamentum first
The electrode body then makes the metal extension by the way of routing.
Preferably, respectively using the surface of the electrode body and the first articulamentum as contact point, metal wire is connected described in
Contact point forms metal extension.
Preferably, first metal electrode is obtained by following method：It is formed on the surface of the first articulamentum first
Mask pattern then forms metal extension by the way of vapor deposition, removes the mask pattern.
Preferably, first metal electrode is obtained by following method：It is formed on the surface of the first articulamentum first
Mask pattern then forms first metal electrode by the way of vapor deposition and plating, removes the mask pattern.
The present invention at least has following advantageous effect：
（1）The part metals extension of first electrode and the distance of luminescent layer increase, and can reduce the extinction of metal electrode, carry
Rise light-emitting diode efficiency；
（2）Metal, which compares other materials (oxide, nitride), has preferable heat-sinking capability, therefore the gold of element surface
Category has a great impact for the heat-sinking capability of element surface, and the present invention can increase surface gold by the expansion electrode of three-dimensional structure
The surface area of category, and then increase the heat dissipation area of element, make thermal energy caused by element that can faster be exported, reduce the effect of element
The loss of rate and reliability.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Example is applied together for explaining the present invention, is not construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is the existing light emitting diode schematic diagram with expansion electrode.
Fig. 2 is the light emitting diode schematic diagram of the embodiment of the present invention 1.
Fig. 3 ~ Fig. 7 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 1.
Fig. 8 ~ Figure 12 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 2.
Figure 13 is the light emitting diode schematic diagram of the embodiment of the present invention 3.
Figure 14 ~ Figure 16 is the light emitting diode manufacturing process schematic diagram of the embodiment of the present invention 3.
Each label represents as follows in figure：
110,210,310,410：Substrate；
120,220,320,420：N-type semiconductor layer；
130,230,330,430：Luminescent layer；
140,240,340,440：P-type semiconductor layer；
150,250,350,450：Current conducting layer；
160,260,360,460：N-electrode；
170：P-electrode；
271,371,471：The main body of p-electrode；
272,372,472：The metal extension of p-electrode.
Specific embodiment
Embodiments below discloses a kind of light-emitting diode chip for backlight unit with 3-dimensional metal expansion electrode, metal extension
Electrode can be in hanging shape, so as to increase the distance with luminescent layer, can effectively reduce absorption of the light by expansion electrode.Present invention hair
The first semiconductor layer can be n type semiconductor layers or p type semiconductor layers in optical diode, and following embodiment is with p-type semiconductor
Layer is the first semiconductor layer, but the present invention is not limited thereto.Likewise, the light emitting diode of the present invention can be horizontal structure or
Vertical stratification, following embodiment are par structure, when light emitting diode is vertical stratification, the electrode below luminescent layer
It may be disposed at the back side of substrate.
Embodiment 1
This embodiment offers hanging LED chip constructions in a kind of expansion electrode part and preparation method thereof.Please
Referring to Fig. 1, a kind of light-emitting diode chip for backlight unit, including substrate 210, n-type semiconductor layer 220, luminescent layer 230, p-type semiconductor layer
240th, current conducting layer 250, n-electrode 260 and p-electrode 270.
Wherein, substrate 210, which is chosen, includes but not limited to sapphire, aluminium nitride, gallium nitride, silicon, silicon carbide, surface texture
Can be planar structure or patterning graph structure.N-type semiconductor layer 220, luminescent layer 230 and p-type semiconductor layer are stacked gradually in lining
On bottom 210, this part-structure uses currently known structure, can set various known insert layers between the layers, such as serve as a contrast
Set between bottom and n-type semiconductor layer buffer layer, set between n-type semiconductor layer and luminescent layer superlattices stress-buffer layers,
Electronic barrier layer etc. is set between luminescent layer and p-type semiconductor layer, the material based on optional nitride in terms of material
Or the material based on AlGaInP.As a preferred embodiment, can electric current be set on the surface of p-type semiconductor layer
Transparent conductive metal nitride can be selected in conducting shell 250, material.N-electrode 260 is located on the surface of n-type semiconductor layer, p-electrode
270 are located on the surface of current conducting layer 250, select metal material.
Specifically, p-electrode 270 is made of main body 271 and metal extension 272, wherein main body 271 is electrode pad, is used
It is used in follow-up packaging and routing, 271 outwardly extending portions based on metal extension 272, can be strip, ring for extending electric current
The metal patterns such as shape, netted extension.Wherein, the lower surface of metal extension 272 not exclusively tightly attaches to current conducting layer 250
Gap 273 is formed between surface, with current conducting layer 250, forms the expansion electrode of three-dimensional structure, part is hanging, such side
Face increases the distance of metal extension 272 and luminescent layer 230, reduces the extinction of the metal extension, on the other hand by
Three-dimensional structure increases the surface area of surface metal, and then increases the heat dissipation area of element, makes thermal energy caused by element can be faster
It is exported, reduces the loss of the efficiency and reliability of element.
It is briefly described with reference to the production method of the above-mentioned light emitting diode in Fig. 3 ~ 7 pair.
First, n-type semiconductor layer 220, luminescent layer 230, p-type semiconductor layer 240 and current conducting layer are formed in substrate 210
250, and the table top of n-electrode is defined, as shown in Figure 3；
Then, respectively n-type semiconductor layer 220, p-type semiconductor layer 240 surface on make n-electrode 260 and p-electrode
Main body 271, as shown in Figure 4；
Then, mask pattern 280 is made on the surface of structure shown in Fig. 4, metal extension 272 is reserved and is passed with electric current
The position 280a of 250 contact point of conducting shell, as shown in Figure 5；
Then, evaporation metal material layer 290 on the surface of structure shown in Fig. 5, as shown in Figure 6；
Finally, mask pattern 280 is removed, so as to the light-emitting diode chip for backlight unit with hanging type metal expansion electrode, such as Fig. 7
It is shown.
Embodiment 2
This embodiment offers another methods for making above-mentioned light-emitting diode chip for backlight unit, with reference to yellow light development, steam
Three kinds of techniques of plating and plating, define the position of n-electrode, the position of the main body of p-electrode and metal extension first and electric current passes
It is produced followed by vapour deposition method in aforementioned three positions needed for galvanoplastic in the position of the contact point of conducting shell, wherein extension
Seed Layer recycles galvanoplastic to make electrode structure, is briefly described with reference to Fig. 8 ~ 12.
First, n-type semiconductor layer 320, luminescent layer 330, p-type semiconductor layer 340 and current conducting layer are formed in substrate 310
350, and the table top of n-electrode is defined, as shown in Figure 8；
Then, mask pattern 380 is made on the surface of aforementioned structure, reserves the position 360a of n-electrode, the position of p-electrode
371a, metal extension 372 and 350 contact point 372a of current conducting layer are put, as shown in Figure 9；
Then, Seed Layer 390 is formed in 360a, 371a and 372a by the way of vapor deposition, as shown in Figure 10；
Then, n-electrode 360, the main body of p-electrode 371 and metal extension 372 are formed by the way of plating, such as Figure 11
It is shown；
Finally, mask pattern 380 is removed, as shown in figure 12.
Embodiment 3
Present embodiments provide hanging light-emitting diode chip for backlight unit in another expansion electrode part and preparation method thereof.Difference
In embodiment 1, the metal extension 472 of the p-electrode of the light emitting diode of the present embodiment uses metal wire, has there are two endpoint,
First end point is located at electrode body 471, and the second endpoint is located on the surface of current conducting layer 450, intermediate hanging, such as Figure 13 institutes
Show.In the present embodiment, the line width of metal wire is 1 ~ 20 micron.
It is briefly described with reference to the production method of the above-mentioned light emitting diode in Figure 14 ~ 16 pair.
First, n-type semiconductor layer 420, luminescent layer 430, p-type semiconductor layer 440 and current conducting layer are formed in substrate 410
450, and the table top of n-electrode is defined, as shown in figure 14；
Then, respectively n-type semiconductor layer 420, p-type semiconductor layer 440 surface on make n-electrode 460 and p-electrode
Main body 471, as shown in figure 15；
Finally, the metal extension 472 of p-electrode is formed by the way of routing, the first contact of routing is conducted for electric current
The surface of layer, the second contact are the main part of p-electrode, intermediate hanging, carry out dispersed metal line by the component of contact point successively
Gravity, as shown in figure 16.
In the present embodiment, the expansion electrode of hanging type is formed by way of routing, without the techniques such as yellow light development, pole
Big simplifies preparation process.
Although having been described above exemplary embodiment of the present invention, it is understood that, the present invention should not necessarily be limited by these examples
Property embodiment but those skilled in the art can be required by the claim in following article the spirit and scope of the present invention
Interior carry out variations and modifications.
Claims (9)
1. light emitting diode including the first articulamentum, luminescent layer, the second articulamentum and is respectively formed in first connection
Layer and the first metal electrode and the second metal electrode on the second articulamentum, it is characterised in that：The first metal electrode packet
Electrode body and at least one outwardly extending metal extension are included, the metal extension and the surface of the first articulamentum are endless
Full connected has gap between the metal extension and first articulamentum, increase the first metal extension and institute
State the distance of luminescent layer.
2. light emitting diode according to claim 1, it is characterised in that：First articulamentum include the first semiconductor and
Current conducting layer, second articulamentum include the second semiconductor layer.
3. light emitting diode according to claim 1, it is characterised in that：The metal extension is adjacent to the first articulamentum
Side part is hanging.
4. light emitting diode according to claim 3, it is characterised in that：The metal extension is metal wire, has two
A contact point, first make contact are located at the electrode body, and the second contact point is located on the surface of first articulamentum, intermediate
Vacantly.
5. the production method of light emitting diode, including forming the first articulamentum, luminescent layer and the second articulamentum, and respectively first
The first metal electrode and the second metal electrode are made on the surface of articulamentum and the second articulamentum, it is characterised in that：The formation
The first metal electrode include electrode body and at least one outwardly extending metal extension, the metal extension and first
The surface incomplete contact between of articulamentum has gap between the metal extension and first articulamentum, increase described the
One metal extension and the distance of the luminescent layer.
6. the production method of light emitting diode according to claim 5, it is characterised in that：First metal electrode passes through
Method obtains below：The electrode body is made on the surface of the first articulamentum first, is then made by the way of routing
The metal extension.
7. the production method of light emitting diode according to claim 6, it is characterised in that：Respectively with the electrode body and
The surface of first articulamentum is contact point, and metal wire is connected the contact point, forms metal extension.
8. the production method of light emitting diode according to claim 5, it is characterised in that：First metal electrode passes through
Method obtains below：Mask pattern is formed on the surface of the first articulamentum first, then forms metal by the way of vapor deposition
Extension removes the mask pattern.
9. the production method of light emitting diode according to claim 5, it is characterised in that：First metal electrode passes through
Method obtains below：Mask pattern is formed on the surface of the first articulamentum first, then the shape by the way of vapor deposition and plating
Into first metal electrode, the mask pattern is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610095213.6A CN105720138B (en) | 2016-02-22 | 2016-02-22 | Light emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610095213.6A CN105720138B (en) | 2016-02-22 | 2016-02-22 | Light emitting diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105720138A CN105720138A (en) | 2016-06-29 |
| CN105720138B true CN105720138B (en) | 2018-07-06 |
Family
ID=56156921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610095213.6A Active CN105720138B (en) | 2016-02-22 | 2016-02-22 | Light emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105720138B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449924B (en) * | 2016-08-30 | 2018-07-27 | 厦门乾照光电股份有限公司 | A kind of flip LED chips and preparation method thereof that photo-thermal is electrically separated |
| CN107887487B (en) * | 2017-10-27 | 2020-04-10 | 扬州乾照光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN109973838A (en) * | 2019-04-04 | 2019-07-05 | 固安翌光科技有限公司 | A kind of LED atmosphere lamp |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012019153A (en) * | 2010-07-09 | 2012-01-26 | Sharp Corp | Semiconductor light-emitting device and semiconductor package having the same |
| JP5569430B2 (en) * | 2011-02-23 | 2014-08-13 | 豊田合成株式会社 | Semiconductor light emitting device |
| JP2013135018A (en) * | 2011-12-26 | 2013-07-08 | Sanken Electric Co Ltd | Light-emitting element |
-
2016
- 2016-02-22 CN CN201610095213.6A patent/CN105720138B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105720138A (en) | 2016-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2393009C (en) | Scalable led with improved current spreading structures | |
| CN105552180B (en) | A kind of production method of novel high-pressure LED | |
| CN101604701B (en) | Light emitting diode having a thermal conductive substrate and method of fabricating the same | |
| CN103500790A (en) | Flip high-voltage light-emitting diode (LED) chip structure and manufacturing method thereof | |
| CN105720138B (en) | Light emitting diode and preparation method thereof | |
| CN109585618B (en) | A kind of high pressure light-emitting diode chip and preparation method | |
| TWI538184B (en) | Light-emitting diode array | |
| TW201336116A (en) | Light emitting diode unit and flip-chip light emitting diode packaging unit | |
| CN102593292B (en) | Light-emitting device | |
| TWI622188B (en) | Light-emitting diode chip | |
| CN203536473U (en) | Flip chip structure of high-voltage LED chips | |
| CN106058030A (en) | Method of manufacturing semiconductor light-emitting unit heat dissipation structure | |
| TWI517442B (en) | Light emitting diode (led) device and manufacturing method thereof | |
| JP2006324296A (en) | Light emitting diode with dispersed current and improved emission area utilization factor | |
| CN105489722B (en) | Light-emitting diode encapsulation structure, LED crystal particle and its manufacturing method | |
| US20160218263A1 (en) | Package structure and method for manufacturing the same | |
| CN106206902B (en) | Light-emitting diode chip for backlight unit | |
| CN205428989U (en) | Flip LED chip | |
| CN103606609B (en) | A kind of manufacture method of light-emitting diodes pipe electrode | |
| CN107256913B (en) | Photoelectric cell | |
| CN108140707A (en) | Luminescent device, for manufacturing the method for luminescent device and light emitting module | |
| CN104064641A (en) | Method for manufacturing LED with vertical type through holes | |
| CN202395037U (en) | LED packaging substrate and light source module employing same | |
| CN207116465U (en) | A kind of easily encapsulation easy heat radiation upside-down mounting high voltage LED chip | |
| CN104241491B (en) | Light-emitting component and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231019 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |