CN107887487B - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN107887487B CN107887487B CN201711021650.4A CN201711021650A CN107887487B CN 107887487 B CN107887487 B CN 107887487B CN 201711021650 A CN201711021650 A CN 201711021650A CN 107887487 B CN107887487 B CN 107887487B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 78
- 238000007788 roughening Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 26
- 239000000945 filler Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000003892 spreading Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention provides a light emitting diode and a manufacturing method thereof, the light emitting diode comprises: the epitaxial structure comprises an epitaxial structure and a metal extension electrode, wherein the metal extension electrode is arranged on the surface of the epitaxial structure. The epitaxial structure comprises a GaAs substrate, a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a roughening layer and an ohmic contact layer, wherein grooves are formed in the roughening layer and the ohmic contact layer, and the depth of each groove in a first preset direction is smaller than the sum of the thicknesses of the roughening layer and the ohmic contact layer. Therefore, in the scheme, the groove is formed in the ohmic contact layer, so that the metal extension electrode is suspended, and the blocking of the metal extension electrode on light emitting is improved. Besides, according to the scheme, metal roughening treatment is carried out on the inner portion of the groove, the light output path is further improved, the light output rate is improved, and the external quantum effect is further improved.
Description
Technical Field
The invention relates to the technical field of LEDs (light emitting diodes), in particular to a light emitting diode and a manufacturing method thereof.
Background
LEDs are rapidly developing by virtue of their many advantages. However, the inventor found that the large power led has a large light emitting area and limited lateral current spreading of the epitaxial layer, so that the metal spreading electrode is used to increase current spreading and injection, and the metal thickness is not more than 20nm, so that the light cannot be transmitted, and the working current of the large power led is generally more than 100 to 1000mA, and at this time, the spreading electrode needs to bear a large current.
Besides, in order to make the current have better lateral expansion capability, the metal expansion electrodes are generally uniformly distributed on the light-emitting surface, however, when the metal expansion electrodes are arranged at present, the metal expansion electrodes account for 10% -30% of the whole light-emitting surface, the problem that the metal electrodes shield the output light can occur, and the light-emitting rate is low.
Therefore, how to provide a light emitting diode and a method for manufacturing the same, which can reduce the light shielding of the metal electrode, is a great technical problem to be solved by those skilled in the art.
Disclosure of Invention
In view of this, the present invention provides an LED chip electrode structure and a method for manufacturing the same, which can simplify the manufacturing process and improve the brightness and efficiency.
In order to achieve the purpose, the invention provides the following technical scheme:
a light emitting diode comprising:
the epitaxial structure comprises a GaAs substrate, and a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a roughening layer and an ohmic contact layer which are sequentially arranged in a first preset direction perpendicular to the substrate, wherein grooves are formed in the roughening layer and the ohmic contact layer, and the depth of each groove in the first preset direction is smaller than the sum of the thicknesses of the roughening layer and the ohmic contact layer;
and the metal extension electrode is arranged on the surface of the epitaxial structure, is suspended on the groove and is opaque along the first preset direction.
Optionally, the method further includes:
and the SOG filler is filled in the groove, so that the SOG filler is removed in a preset process.
Optionally, the trench in the epitaxial structure is a trench whose sidewall and bottom are roughened.
Optionally, the projection shape of the trench on the GaAs substrate includes a rectangle, a triangle, and a circle.
Optionally, the method further includes:
the electrode is arranged on the surface of the metal extension electrode, and the grooves are symmetrically distributed on two sides of the electrode.
A method of manufacturing a light emitting diode, comprising:
providing an epitaxial structure, wherein the epitaxial structure comprises a GaAs substrate, and a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a coarsening layer and an ohmic contact layer which are sequentially arranged in a first preset direction perpendicular to the substrate;
manufacturing SiO with preset thickness on the ohmic contact layer2A layer;
in the SiO2Forming a preset groove pattern on the layer;
forming a groove in the ohmic contact layer and the rough layer, wherein the depth of the groove in a first preset direction is smaller than the sum of the thicknesses of the rough layer and the ohmic contact layer;
forming a metal extension electrode and a metal pad on the epitaxial structure;
and forming a back electrode on the epitaxial structure.
Optionally, after the forming the trench in the ohmic contact layer and the roughened layer, the method further includes:
spin-coating SOG filler on the surface of the groove, and curing;
correspondingly, after forming the metal extension electrode and the metal pad on the epitaxial structure, the method further includes:
removing the SOG filler.
Optionally, after the forming the trench in the ohmic contact layer and the roughened layer, the method further includes:
and carrying out roughening treatment on the groove in the roughening layer of the current epitaxial structure.
Optionally, the forming the trench in the ohmic contact layer and the roughened layer includes:
etching the epitaxial structure for a preset time based on a preset groove pattern to obtain a target epitaxial structure with a groove with a preset depth;
and etching the coarsening layer of the target epitaxial structure by a preset depth to ensure that the depth of the groove in the coarsening layer is smaller than the thickness of the coarsening layer.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
the present invention provides a light emitting diode, comprising: the epitaxial structure comprises an epitaxial structure and a metal extension electrode, wherein the metal extension electrode is arranged on the surface of the epitaxial structure. The epitaxial structure comprises a GaAs substrate, a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a roughening layer and an ohmic contact layer, wherein grooves are formed in the roughening layer and the ohmic contact layer, and the depth of each groove in a first preset direction is smaller than the sum of the thicknesses of the roughening layer and the ohmic contact layer. Therefore, in the scheme, the groove is formed in the ohmic contact layer, so that the metal extension electrode is suspended, and the blocking of the metal extension electrode on light emitting is improved.
In addition, the groove in the coarsening layer is coarsened, so that the light output path is further improved, the light output rate is improved, and the external quantum effect is further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a light emitting diode provided in this embodiment;
fig. 2 is a schematic flow chart illustrating a method for manufacturing a light emitting diode according to this embodiment;
fig. 3 is a schematic view of another structure of a light emitting diode according to this embodiment;
fig. 4 is a schematic flowchart of a method for manufacturing a light emitting diode according to this embodiment;
fig. 5 is a schematic view of another structure of a light emitting diode according to this embodiment;
fig. 6 is a cross-sectional view of a light emitting diode along a plane where an ohmic contact layer is located according to this embodiment.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a light emitting diode provided in this embodiment, including: an epitaxial structure 21 and a metal extension electrode 22.
Wherein a metal extension electrode 22 is arranged on the surface of the epitaxial structure 21. The epitaxial structure 21 may include a GaAs substrate 101, a DBR layer 102, an N confinement layer 103, an active layer 104, a P confinement layer 105, a current spreading layer 106, a roughening layer 107, and an ohmic contact layer 108, wherein the roughening layer 107 and the ohmic contact layer 108 are provided with a trench 109, and a depth of the trench 109 in a first predetermined direction is smaller than a sum of thicknesses of the roughening layer 107 and the ohmic contact layer 108. Specifically, the first preset direction may be a vertical direction in fig. 1.
Therefore, according to the scheme, the groove is formed in the ohmic contact layer, so that the metal extension electrode is suspended, and the blocking of the metal extension electrode on the light emitting is improved.
Specifically, this embodiment provides a specific implementation flow of an epitaxial layer, which is as follows:
the epitaxial structure of the light emitting diode is formed by sequentially growing the DBR layer 102, the N confinement layer 103, the active layer 104, the P confinement layer 105, the current spreading layer 106, the roughening layer 107, and the ohmic contact layer 108 on the same side of the GaAs substrate (i.e., the GaAs substrate 101) using the organic metal vapor phase epitaxy method on a growth substrate made of GaAs.
The DBR layer 102 may be made of GaAs or AlGaAs. The material of the N confinement layer 103 can be (AlxGa91-x))0.5In0.5P, wherein x is 0 to 1, and is doped with Si or Te, and the doping concentration is 1e 17-1 e 19. The material of the active layer 104 may be AlxGa (1-x) InP. The material of the P-confinement layer 105 may be AlInP, and the material of the current spreading layer 106 may be GaP or (AlxGa (1-x))0.5in0.5p, where x is 0 to 1, and is doped with Si or C at a doping concentration of 1e17 to 1e 18. The material of roughened layer 107 may be GaP or (AlxGa (1-x))0.5in0.5p, and the thickness of the roughened layer is preferably 3 to 5um, and the material of ohmic contact layer 108 is InxGa (1-x) As, wherein Mg or C is doped, and the doping concentration is: 1e 19-1 e 21.
It should be noted that the materials selected for the layers in the epitaxial structure are only for illustration, but not limited to the materials mentioned above.
Specifically, the present embodiment further provides a method for manufacturing a light emitting diode with the above structure, as shown in fig. 2, including the steps of:
and S21, providing an epitaxial structure.
The epitaxial structure comprises a GaAs substrate, a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expansion layer, a rough layer and an ohmic contact layer. The manufacturing process of the epitaxial structure can be referred to the above embodiments.
And S22, manufacturing a metal extension electrode layer with a preset thickness on the ohmic contact layer.
Specifically, the epitaxial structure may be cleaned and baked, and then 200nm SiO may be grown on the ohmic contact layer by PECVD2A material. Of these, 200nm is only a specific example, and the preset thickness of the present embodiment is not limited thereto.
S23, forming a preset pattern on the metal extension electrode layer;
specifically, a photoresist pattern is formed on the metal extended electrode layer by coating, photolithography and development.
And S24, forming a groove in the ohmic contact layer and the rough layer, wherein the depth of the groove in a first preset direction is smaller than the sum of the thicknesses of the rough layer and the ohmic contact layer.
Specifically, the epitaxial structure may be etched for a predetermined time based on a predetermined pattern to obtain a target epitaxial structure having a trench with a predetermined depth, and then, a roughened layer of the target epitaxial structure is etched by the predetermined depth, so that the depth of the trench in the roughened layer is smaller than the thickness of the roughened layer.
For example, the ohmic contact layer region of the epitaxial structure with the photoresist pattern is removed by BOE etching for a predetermined time, for example, 60 seconds. Then, etching by a dry etching method until the depth of the roughened layer is less than the thickness of the roughened layer, and removing the photoresist and the SiO2And obtaining the groove with the metal extension electrode capable of being suspended.
And S25, forming a metal extension electrode and a metal pad on the epitaxial structure.
Specifically, the metal extension electrode and the metal pad are evaporated on the epitaxial structure by an electron beam evaporation method. And then obtaining the light-emitting diode with the metal extension electrode and the metal bonding pad through a negative glue stripping process.
And S26, forming a back electrode on the epitaxial structure.
Specifically, the epitaxial structure is ground, a back electrode is manufactured, and then size cutting is performed to form the light emitting diode.
Preferably, in addition to the above manufacturing process, after step S24 (forming a trench in the ohmic contact layer and the roughened layer), the surface of the trench may be spin-coated with an SOG filler and cured, for example, the SOG filler may be spin-coated on the surface of the trench and cured, and then the SOG filler in the region other than the trench may be removed by glue coating, photolithography and development, so as to obtain an epitaxial structure in which the trench is filled with the SOG filler. Accordingly, after step S25 (forming metal extension electrodes and metal pads on the epitaxial structure), the SOG filler is removed. For example, the light emitting diode with the metal extension electrode and the metal pad is subjected to metal etching by hydrofluoric acid solution to remove the SOG filler in the trench.
By way of example, with reference to the above steps, a specific example is as follows:
① cleaning and baking the epitaxial structure, and growing 200nm SiO on the ohmic contact layer by PECVD2A material;
② in SiO2Coating with glue, photoetching,Developing to prepare a photoresist pattern;
③ the ohmic contact layer area can be removed by BOE etching the epitaxial structure with the manufactured photoetching pattern for 60 seconds;
④ dry etching until the depth of the roughened layer is less than the thickness of the roughened layer, removing photoresist, and removing SiO2Obtaining a groove for suspending the metal extension electrode;
⑤ spin-coating SOG on the surface with the groove, curing, removing the SOG outside the groove by coating, photoetching and developing to obtain an epitaxial structure with the groove filled with SOG;
⑥ evaporating and plating the metal extended electrode and the metal pad on the epitaxial structure filled with SOG by cleaning, gluing, photoetching, developing and other processes and then by an electron beam evaporation method;
⑦ obtaining a light emitting diode with metal extension electrode and metal pad by negative glue stripping process;
⑧ performing metal corrosion on the LED with the metal extended electrode and the metal bonding pad by hydrofluoric acid solution to remove SOG filler in the groove;
⑨ grinding, making back electrode, cutting, and splitting to obtain the final product.
Example two
On the basis of the foregoing embodiments, this embodiment further provides a specific implementation structure of a light emitting diode, as shown in fig. 3, the structure of the light emitting diode is different from that of the light emitting diode in fig. 1 in that the trench 109 in the roughened layer 107 in the epitaxial structure 21 is a trench subjected to roughening treatment. The bottom and the side wall of the groove in the coarsening layer are coarsened, so that the light output path is further improved, the light output rate is improved, and the external quantum effect is further improved.
Specifically, the present embodiment further provides a manufacturing method for manufacturing the light emitting diode with the roughened trench structure, as shown in fig. 4, including the steps of:
and S41, providing an epitaxial structure.
The epitaxial structure comprises a GaAs substrate, a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expansion layer, a rough layer and an ohmic contact layer. The manufacturing process of the epitaxial structure can be referred to the above embodiments.
And S42, manufacturing a metal extension electrode layer with a preset thickness on the ohmic contact layer.
Specifically, the epitaxial structure may be cleaned and baked, and then 200nm SiO may be grown on the ohmic contact layer by PECVD2A material. Of these, 200nm is only a specific example, and the preset thickness of the present embodiment is not limited thereto.
S43, forming a preset pattern on the metal extension electrode layer;
specifically, a photoresist pattern is formed on the metal extended electrode layer by coating, photolithography and development.
And S44, forming a groove in the ohmic contact layer and the rough layer, wherein the depth of the groove in a first preset direction is smaller than the sum of the thicknesses of the rough layer and the ohmic contact layer.
Specifically, the epitaxial structure may be etched for a predetermined time based on a predetermined pattern to obtain a target epitaxial structure having a trench with a predetermined depth, and then, a roughened layer of the target epitaxial structure is etched by the predetermined depth, so that the depth of the trench in the roughened layer is smaller than the thickness of the roughened layer.
For example, the ohmic contact layer region of the epitaxial structure with the photoresist pattern is removed by BOE etching for a predetermined time, for example, 60 seconds. Then, etching by a dry etching method until the depth of the roughened layer is less than the thickness of the roughened layer, and removing the photoresist and the SiO2And obtaining the groove with the metal extension electrode capable of being suspended.
S45, roughening the groove in the rough layer of the current epitaxial structure;
specifically, the epitaxial structure with the groove is placed into a roughening solution to roughen the groove in the roughened layer.
S46, spin-coating SOG filler on the surface of the groove, and curing;
specifically, spin-coating an SOG filler on the surface of the trench, curing, and then removing the SOG filler in the region except the trench by gluing, photoetching and developing to obtain an epitaxial structure in which the SOG filler is filled in the trench.
And S47, forming a metal extension electrode and a metal pad on the epitaxial structure.
Specifically, the metal extension electrode and the metal pad are evaporated on the epitaxial structure by an electron beam evaporation method. And then obtaining the light-emitting diode with the metal extension electrode and the metal bonding pad through a negative glue stripping process.
And S48, removing the SOG filler.
For example, the light emitting diode with the metal extension electrode and the metal pad is subjected to metal etching by hydrofluoric acid solution to remove the SOG filler in the trench.
And S49, forming a back electrode on the epitaxial structure.
Specifically, the epitaxial structure is ground, a back electrode is manufactured, and then size cutting is performed to form the light emitting diode.
In addition, as shown in fig. 5, on the basis of the above embodiment, in the light emitting diode provided in this embodiment, an electrode 23 is further disposed on the surface of the metal extended electrode, and the trenches 109 are symmetrically distributed on two sides of the electrode.
Note that, in this embodiment, the shape of the trench is not limited, that is, the projection shape of the trench on the GaAs substrate may be a rectangle, as shown in fig. 6, or may be a triangle, a circle, or the like. Only the groove is required to be ensured to enable the metal extension electrode to be suspended. Fig. 6 is a cross-sectional view along the ohmic contact layer, and a metal extended electrode (not shown) is disposed thereon.
By adopting the manufacturing method, the inventor experimentally proves that the blocking occupation ratio of the metal extension electrode of the light-emitting diode using the suspended metal extension electrode is reduced to 21.87% from 27.37% in the prior art, and the light output rate is improved.
In summary, the present invention provides a light emitting diode and a method for manufacturing the same, the light emitting diode includes: the epitaxial structure comprises an epitaxial structure and a metal extension electrode, wherein the metal extension electrode is arranged on the surface of the epitaxial structure. The epitaxial structure comprises a GaAs substrate, a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a roughening layer and an ohmic contact layer, wherein grooves are formed in the roughening layer and the ohmic contact layer, and the depth of each groove in a first preset direction is smaller than the sum of the thicknesses of the roughening layer and the ohmic contact layer. Therefore, in the scheme, the groove is formed in the ohmic contact layer, so that the metal extension electrode is suspended, and the blocking of the metal extension electrode on light emitting is improved. Besides, the scheme also performs roughening treatment on the inside of the groove, further improves the light output path, improves the light output rate and further improves the external quantum effect.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A light emitting diode, comprising:
the epitaxial structure comprises a GaAs substrate, and a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a roughening layer and an ohmic contact layer which are sequentially arranged in a first preset direction perpendicular to the substrate, wherein grooves are formed in the roughening layer and the ohmic contact layer, and the depth of each groove in the first preset direction is smaller than the sum of the thicknesses of the roughening layer and the ohmic contact layer;
and the metal extension electrode is arranged on the surface of the epitaxial structure, is suspended on the groove and is opaque along the first preset direction.
2. The light-emitting diode according to claim 1,
the groove in the epitaxial structure is a groove with a side wall and a bottom subjected to roughening treatment.
3. The light-emitting diode according to claim 1, wherein the projected shape of the trench on the GaAs substrate includes a rectangle, a triangle, and a circle.
4. The light-emitting diode according to claim 1, further comprising:
the electrode is arranged on the surface of the metal extension electrode, and the grooves are symmetrically distributed on two sides of the electrode.
5. A method of manufacturing a light emitting diode, comprising:
providing an epitaxial structure, wherein the epitaxial structure comprises a GaAs substrate, and a DBR layer, an N limiting layer, an active layer, a P limiting layer, a current expanding layer, a coarsening layer and an ohmic contact layer which are sequentially arranged in a first preset direction perpendicular to the substrate;
manufacturing SiO with preset thickness on the ohmic contact layer2A layer;
in the SiO2Forming a preset groove pattern on the layer;
forming a groove in the ohmic contact layer and the rough layer, wherein the depth of the groove in a first preset direction is smaller than the sum of the thicknesses of the rough layer and the ohmic contact layer;
forming a metal extension electrode and a metal pad on the epitaxial structure;
and forming a back electrode on the epitaxial structure.
6. The method for manufacturing the light emitting diode according to claim 5, further comprising, after the forming the trench in the ohmic contact layer and the rough layer:
spin-coating SOG filler on the surface of the groove, and curing;
correspondingly, after forming the metal extension electrode and the metal pad on the epitaxial structure, the method further includes:
removing the SOG filler.
7. The method for manufacturing the light emitting diode according to claim 5, further comprising, after the forming the trench in the ohmic contact layer and the rough layer:
and carrying out roughening treatment on the groove in the roughening layer of the current epitaxial structure.
8. The method of claim 7, wherein the forming the trench in the ohmic contact layer and the roughened layer comprises:
etching the epitaxial structure for a preset time based on a preset groove pattern to obtain a target epitaxial structure with a groove with a preset depth;
and etching the coarsening layer of the target epitaxial structure by a preset depth to ensure that the depth of the groove in the coarsening layer is smaller than the thickness of the coarsening layer.
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| CN103811598A (en) * | 2013-12-12 | 2014-05-21 | 南京邮电大学 | Hafnium oxide hanging resonant photonic device for silicon-based nitride materials and production method thereof |
| KR20150029163A (en) * | 2013-09-09 | 2015-03-18 | 엘지이노텍 주식회사 | Light Emitting Device |
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