CN104037317B - A kind of high power LED lamp using ceramic heat-dissipating - Google Patents
A kind of high power LED lamp using ceramic heat-dissipating Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of high power LED lamp using ceramic heat-dissipating, at a fixing circuit board of ceramic heat-dissipating pedestal, white light LEDs flip-chip is connected with at described circuit board, it is characterized in that: the P-type electrode of white light LEDs flip-chip mainly comprises P-type electrode metal alloy layer (24) and P-type electrode light penetrated bed ito thin film (192), P-type electrode light penetrated bed ito thin film (192) top is connected with P-type electrode metal alloy layer (24), P-type electrode light penetrated bed ito thin film (192) surrounding extends downward light penetrated bed (9) and the metal level (11) of below and silicon dioxide layer (10) is limited to wherein.The present invention, owing to the silicon dioxide layer below P-type electrode and metal level being wrapped up completely by P-type electrode light penetrated bed ito thin film, adds P-type electrode light penetrated bed ito thin film exposed area, thus also just adds light penetrated bed area, improve LED luminous efficiency.
Description
Technical field
The present patent application is on 02 27th, 2012 applying date, and application number is: 201210044889.4, the divisional application of the application for a patent for invention that name is called " a kind of high power LED lamp using ceramic heat-dissipating ".The present invention relates to a kind of LED lamp, especially relate to a kind of high power LED lamp using ceramic heat-dissipating.
Background technology
LED lamp is large owing to dispelling the heat, if can not dispel the heat in time, especially great power LED of long duration after will burn electronic devices and components, have influence on LED lamp and use normally and the life-span.Now use heat abstractor commercially typically uses heat dissipation metal mode, but the effect that heat dissipation metal does not use ceramic material to dispel the heat is better.
In addition, use its advantage of Sapphire Substrate to be that chemical stability is good, do not absorb visible ray, moderate cost, manufacturing technology relative maturity, therefore become for the most general substrate of GaN growth.In the encapsulation process of LED, all Sapphire Substrate face is directly fixed on heating panel.In the course of work of LED, its luminous zone is the root of device heating.Because Sapphire Substrate itself is a kind of insulating material, and heat conductivility is more poor than GaN material, so have certain restriction to its operating current of LED component of this formal dress, to guarantee luminous efficiency and the working life of LED.For improving the heat dispersion of device, people devise a kind of LED chip structure, i.e. the LED chip of inverted structure.
In addition, the structure of the GaN chip of traditional Sapphire Substrate, electrode is just positioned at the exiting surface of chip.Due to the conductivity that p-GaN layer is limited, therefore require that this current-diffusion layer is made up of Ni and Au at the metal level of p-GaN layer surface precipitation one deck for current spread, the light splitting of meeting absorbent portion, thus reduce light extraction efficiency.If by flip-chip, so current-diffusion layer (metallic reflector) just becomes the reflector of light, and such light is launched by Sapphire Substrate, thus improves light extraction efficiency.
After the inverted design proposing chip, people have carried out large quantifier elimination and exploration for its feasibility.Due to the limitation of LED chip design, encapsulation yield is always very low, and reason is as follows: the first, N-type electrode region is relatively little, is difficult to the respective regions contraposition with pcb board; The second, N-type electrode position is higher than P-type electrode position a lot, is easy to cause rosin joint, sealing-off situation; Three, for making N-type electrode, often to remove active area greatly artificially, This greatly reduces the light-emitting area of device, directly affects LED luminous efficiency.
Moreover although the luminous efficiency of LED has exceeded fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency is still lower than sodium vapor lamp (150lm/W).So, does which factor affect the luminous efficiency of LED? with regard to white light LEDs, its encapsulation finished product luminous efficiency is by internal quantum efficiency, electrical pumping efficiency, and the product of extraction efficiency and packaging efficiency determines.As shown in figure 35, utilize MOCVD, VPE, MBE or LPE technology growth of device (as LED, LD etc.) structure on the substrate 30, respectively be substrate 30, n type material layer 31, luminous zone 32, P-type material layer 33, P-type electrode 34, P level soldering-tin layer 35, pcb board 36 and heating panel 40 from top to bottom.Wherein also be connected N-type electrode 37, N level soldering-tin layer 38 and pcb board 39 between n type material layer 31 with heating panel 40 successively.
The technological deficiency that this traditional LED flip chip exists is as follows:
1, in the horizontal direction N-type electrode 37 present position and P-type electrode 34 apart from each other, the Position Design of N-type electrode 37 to the pcb board 39 below it has harsh requirement, has influence on encapsulation acceptance rate.
2, N-type electrode 37 position is higher than P-type electrode 34 position a lot, causes the gap between itself and the pcb board 39 of below comparatively large, is easy to make N level soldering-tin layer 38 long and the generation that causes rosin joint or sealing-off when scolding tin.
3, in order to make N-type electrode 37 can weld with the pcb board 39 below it, needing to remove luminous zone greatly, having influence on the luminous efficiency of LED chip.
4, electrode zone is large not, affects Injection Current efficiency and then has influence on the luminous efficiency of LED chip.
5, P-type electrode and N-type electrode position are in chip both sides, cause electron flow path to differ, and as Figure 36, form resistance uneven, chip light emitting district non-uniform light, has influence on the luminous efficiency of LED chip.
Summary of the invention
The present invention devises a kind of high power LED lamp using ceramic heat-dissipating, which solves following technical problem to be:
(1) high-power LED lamp is large owing to dispelling the heat, if can not dispel the heat in time, especially great power LED of long duration after will burn electronic devices and components, have influence on LED lamp and use normally and the life-span.
(2) N-type electrode district is relative with P-type electrode district little, is difficult to, with the respective regions contraposition of pcb board, can have influence on the acceptance rate of packaging effect and LED product;
(3) N-type electrode position is higher than P-type electrode position a lot, is easy to cause rosin joint, sealing-off situation;
(4) for making N-type electrode, often to remove active area greatly artificially, This greatly reduces the light-emitting area of device, directly affects LED luminous efficiency;
(5) P-type electrode and N-type electrode region are large not, affect Injection Current, directly affects LED chip luminous efficiency;
(6) P-type electrode and N-type electrode position are in chip both sides, cause electron flow path to differ, and form resistance uneven, chip light emitting district non-uniform light, has influence on the luminous efficiency of LED chip.
In order to solve the technical problem of above-mentioned existence, present invention employs following scheme:
A kind of high power LED lamp using ceramic heat-dissipating, comprise ceramic heat-dissipating pedestal, at a fixing circuit board of described ceramic heat-dissipating pedestal, be connected with white light LEDs flip-chip at described circuit board, above described white light LEDs flip-chip, be fixed with a nontransparent lampshade, radiating fin is outwardly provided with at the another side of described ceramic heat-dissipating pedestal, described radiating fin is also ceramic material, it is characterized in that: described white light LEDs flip-chip Rotating fields comprises substrate (1) successively, resilient coating (2), N-type layer (3), N-type is limiting layer (4) respectively, luminous region layer (5), P type is limiting layer (6) respectively, P-type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11), at substrate (1) surface application one deck nano fluorescent bisque (28), it is characterized in that: this chip is etched into halfpace structure and forms cyclic n nitroso compound type electrode and cylindricality P-type electrode, cylindricality P-type electrode is by cyclic n nitroso compound type electrodes surrounding, the solder side that described cyclic n nitroso compound type electrode and described cylindricality P-type electrode are connected with pcb board is in same level height.
Further, N-type electrode mainly comprises N-type electrode light penetrated bed ito thin film (191) and N-type electrode metal alloy layer (23), wherein N-type electrode light penetrated bed ito thin film (191) is hierarchic structure, and hierarchic structure bottom is connected with N-type layer (3) exposed region of chip both sides; Hierarchic structure top is connected with N-type electrode metal alloy layer (23), metal level (11) and dielectric insulating film (16), wherein N-type electrode metal alloy layer (23) is positioned at the top on hierarchic structure top, and metal level (11) and dielectric insulating film (16) are positioned at the below on hierarchic structure top; P-type electrode mainly comprises P-type electrode metal alloy layer (24) and P-type electrode light penetrated bed ito thin film (192), P-type electrode light penetrated bed ito thin film (192) top is connected with P-type electrode metal alloy layer (24), and P-type electrode light penetrated bed ito thin film (192) surrounding extends downward light penetrated bed (9) and is limited to wherein by metal level (11) and silicon dioxide layer (10);
N-type electrode metal alloy layer (23) and P-type electrode metal alloy layer (24) are positioned at same level.
Further, mid portion and the bottom of described dielectric insulating film (16) and hierarchic structure parallel, and play the effect of isolating n-type electrode light penetrated bed ito thin film (191).
Further, in described substrate (1), one deck male and fomale(M&F) (12) is formed.
Further, described substrate (1) and described resilient coating (2) are by male and fomale(M&F) (12) structural transition.
Further, described cyclic n nitroso compound type electrode is connected with radiator structure (26) by respective pcb board with described P-type electrode.
Further, described substrate (1) forms multiple attachment hole (27) by etching, nano fluorescent bisque (28) sticks to described substrate (1) surface by described multiple attachment hole (27).
Further, described radiating fin is columned heat radiation projection.
Further, described radiating fin is the heat radiation projection of square.
The high power LED lamp of this use ceramic heat-dissipating, compared with common high power LED lamp, has following beneficial effect:
(1) the present invention due to the material of radiating fin and ceramic heat-dissipating pedestal be ceramic material, utilize the high conduction of ceramic material and high radiation physics characteristic, the heat energy that white light LEDs flip-chip produces can be absorbed fast and leaves, guarantee that white light LEDs flip-chip is in a constant low temperature state, and Absorbable organic halogens continued operation, thus can extend the useful life of LED.
(2) the present invention owing to adhering to one deck circular nano phosphor powder layer by attachment hole on substrate, and this nano fluorescent bisque is compared with common fluorescent material, and the white light that chip can be made to send is more bright reliable.
(3) the present invention is owing to being wrapped up the silicon dioxide layer below P-type electrode and metal level completely by P-type electrode light penetrated bed ito thin film, add P-type electrode light penetrated bed ito thin film exposed area, thus also just add light penetrated bed area, improve LED luminous efficiency.
(4) the present invention comprises N-type electrode and P-type electrode due to chip structure, makes P electrode and N electrode aspect amass maximum, obtains maximum Injection Current, improving luminous efficiency.
(5) the present invention have employed hierarchic structure due to N-type electrode, only requires and removes very little a part of active area, ensure that the maximization of reflection layer area, obtain optimal luminescent efficiency.
(6) the present invention surrounds cylindricality P-type electrode layer owing to adopting annular N-type electrode layer, can realize the most uniform electric current, make luminous zone the most even.
(7) the present invention is also because N-type electrode layer and P-type electrode layer are in same plane, and encapsulation acceptance rate is higher.
Accompanying drawing explanation
Fig. 1: LED chip manufacturing process steps 1 schematic diagram in the present invention;
Fig. 2: LED chip manufacturing process steps 2 schematic diagram in the present invention;
Fig. 3: LED chip manufacturing process steps 3 schematic diagram in the present invention;
Fig. 4: LED chip manufacturing process steps 4 schematic diagram in the present invention;
Fig. 5: LED chip manufacturing process steps 5 schematic diagram in the present invention;
Fig. 6: LED chip manufacturing process steps 6 schematic diagram in the present invention;
Fig. 7: LED chip manufacturing process steps 7 schematic diagram in the present invention;
Fig. 8: LED chip manufacturing process steps 8 schematic diagram in the present invention;
Fig. 9: LED chip manufacturing process steps 9 schematic diagram in the present invention;
Figure 10: LED chip manufacturing process steps 10 schematic diagram in the present invention;
Figure 11: LED chip manufacturing process steps 11 schematic diagram in the present invention;
Figure 12: LED chip manufacturing process steps 12 schematic diagram in the present invention;
Figure 13: LED chip manufacturing process steps 13 schematic diagram in the present invention;
Figure 14: LED chip manufacturing process steps 14 schematic diagram in the present invention;
Figure 15: LED chip manufacturing process steps 15 schematic diagram in the present invention;
Figure 16: LED chip manufacturing process steps 16 schematic diagram in the present invention;
Figure 17: LED chip manufacturing process steps 17 schematic diagram in the present invention;
Figure 18: LED chip manufacturing process steps 18 schematic diagram in the present invention;
Figure 19: LED chip manufacturing process steps 19 schematic diagram in the present invention;
Figure 20: LED chip manufacturing process steps 20 schematic diagram in the present invention;
Figure 21: LED chip manufacturing process steps 21 schematic diagram in the present invention;
Figure 22: LED chip manufacturing process steps 22 schematic diagram in the present invention;
Figure 23: LED chip manufacturing process steps 23 schematic diagram in the present invention;
Figure 24: LED chip manufacturing process steps 24 schematic diagram in the present invention;
Figure 25: LED chip manufacturing process steps 25 schematic diagram in the present invention;
Figure 26: LED chip manufacturing process steps 26 schematic diagram in the present invention;
Figure 27: LED chip manufacturing process steps 27 schematic diagram in the present invention;
Figure 28: LED chip manufacturing process steps 28 schematic diagram in the present invention;
Figure 29: LED chip manufacturing process steps 29 schematic diagram in the present invention;
Figure 30: the present invention uses the high power LED lamp structural representation of ceramic heat-dissipating;
The vertical view of Figure 31: Figure 30;
Light reflection hint effect figure in Figure 32: Figure 28;
Figure 33: the present invention uses high power LED lamp and the radiator structure connection diagram of ceramic heat-dissipating;
Figure 34: LED chip structure schematic diagram in prior art;
In Figure 35: Figure 34, electron stream is to schematic diagram.
Description of reference numerals:
1-substrate; 2-resilient coating; 3-N-type layer; 4-N-type is limiting layer respectively; 5-luminous region layer; 6-P type is limiting layer respectively; 7-P-type layer; 8-P type ohmic contact layer; 9-light penetrated bed; 10-silicon dioxide layer; 11-metal level; 12-male and fomale(M&F); 13-the first photoresist layer; 14-the second photoresist layer; 15-the three photoresist layer; 16-dielectric insulating film; 17-the four photoresist layer; 18-the five photoresist layer; 19-light penetrated bed ito thin film; 191-N-type electrode light penetrated bed ito thin film; 192-P-type electrode light penetrated bed ito thin film; 20-the six photoresist layer; 21-metal alloy layer; 22-the seven photoresist layer; 23-N-type electrode metal alloy layer; 24-P-type electrode metal alloy layer; 25-pcb board; 26-radiator structure; 27-attachment hole; 28-nano fluorescent bisque;
30-substrate; 31-n type material layer; 32-luminous zone; 33-P-type material layer; 34-P-type electrode; 35-P level soldering-tin layer; 36-pcb board; 37-N-type electrode; 38-N level soldering-tin layer; 39-pcb board; 40-heating panel.
Embodiment
Below in conjunction with Fig. 1 to Figure 34, the present invention will be further described:
As shown in Figure 1, substrate 1 is carrier, is generally the material such as sapphire, carborundum, silicon, GaAs, AlN, ZnO or GaN.
On substrate 1, first form one deck male and fomale(M&F) 12 to etch, this male and fomale(M&F) 12 can reduce the total reflection of light in chip, increases light emission rate.
Resilient coating 2 is transition zones, on this basis other material such as N, P, quantum well of growing high-quality.
LED is tied by pn and forms, resilient coating 2, N-type layer 3 layers, N-type respectively limiting layer 4, P type limiting layer 6 and P-type layer 7 make P needed for LED and n type material to be formed respectively.Luminous region layer 5 is luminous zones of LED, and the color of light is determined by the material of active area.
P type ohmic contact layer 8 is last one decks of Material growth, and the charge carrier doping concentration of this one deck is higher, and object is for making less ohmic contact resistance.
P type metal ohmic contact layer is not formed by growth, but formed by the method such as evaporation or sputtering, one of object is the electrode of making devices, and two of object is in order to packaging and routing is used.
Again by evaporation, sputtering or other film manufacturing method, one deck ito thin film is formed on P type ohmic contact layer 8 surface, for making the light penetrated bed 9 of light-emitting diode, ito thin film is generally tin indium oxide material, be a kind of transparent semiconductor conductive film, the light extraction efficiency of LED generally can be made to improve 20%-30%.Again by evaporation, sputtering or other film manufacturing method, the completely reflecting mirror of silicon dioxide layer 10 and metal level 11 sandwich construction is formed at light penetrated bed 9, silicon dioxide layer 10 can improve the current expansion of luminous zone, reduce electric current pile-up effect, and metal level 11 can reduce the absorption of P electrode to light as speculum, increase the extraction of Sapphire Substrate marginal ray, and can as the heat-conducting plate of chip; Metal on demand can aluminium, silver or the material such as golden.
As shown in Figure 2, the metal level 11 surface coating positive glue of the first photoresist layer 13(or negative glue in Fig. 1 structure), coating speed is at 2500-5000 rev/min, and control between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in Figure 3, the first photoresist layer 13 of LED flip chip periphery is removed by exposure or visualization way, and forms annular metallic layer exposed region.
As shown in Figure 4, utilize dry quarter or the method for chemical corrosion, by the N-type of expose portion respectively limiting layer 4, luminous region layer 5, P type respectively the N-type layer 3 of limiting layer 6, P-type layer 7, P type ohmic contact layer 8, light penetrated bed 9, silicon dioxide layer 10, metal level 11 and part remove and make whole LED chip form halfpace structure.
As shown in Figure 5, the first photoresist layer 13 of LED chip intermediate rest is all removed.
As shown in Figure 6, the positive glue of the second photoresist layer 14(or negative glue is coated with on the surface of Fig. 5 structure), coating speed at 2500-5000 rev/min, and controls between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in Figure 7, structural for LED flip chip halfpace part second photoresist layer 14 is removed by exposure or visualization way, and forms annular metallic layer exposed region.
As shown in Figure 8, utilize the method for dry quarter or chemical corrosion, the metal level 11 of expose portion and silicon dioxide layer 10 are removed, form annular groove.
As shown in Figure 9, remaining for LED flip chip the second photoresist layer 14 is all removed.
As shown in Figure 10, the surface of gained LED chip structure is coated with the positive glue of the 3rd photoresist layer 15(or negative glue in fig .9), coating speed is at 2500-5000 rev/min, and control between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 11, the 3rd photoresist layer 15 on LED chip surface is removed by exposure or visualization way part, forms halfpace outer wall exposed region and on halfpace, form annular exposed region.
As shown in figure 12, utilize PECVD or other coating technique, the body structure surface shown in Figure 11 directly prepares one deck dielectric insulating film 16, and dielectric insulating film 16 material is the good dielectric of silicon dioxide layer or other light transmission, and thickness is between 100nm-500nm.Dielectric insulating film 16 covers on the LED chip of hierarchic structure by the mode of plated film and the 3rd photoresist layer 15 surface equably.
As shown in figure 13, the LED structure surface coating positive glue of the 4th photoresist layer 17(or negative glue at Figure 12), coating speed at 2500-5000 rev/min, and controls between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 14, the 4th photoresist layer 17 on LED chip surface is removed by exposure or visualization way part, only retains the 4th photoresist layer 17 of halfpace outer wall vertical coating.
As shown in figure 15, utilize the method for dry quarter or chemical corrosion, remove portion dielectric insulating film 16, only retain the dielectric insulating film 16 in annular groove on dielectric insulating film 16 and halfpace that halfpace outer wall vertical arranges, the dielectric insulating film 16 on halfpace in annular groove highly equals the thickness of metal level 11 and silicon dioxide layer 10.
As shown in figure 16, remaining for LED chip the 3rd photoresist layer 15 and the 4th photoresist layer 17 are all removed.
As shown in figure 17, at the surface of Figure 16 chip structure coating positive glue of the 5th photoresist layer 18(or negative glue), coating speed is at 2500-5000 rev/min, and control between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 18, the 5th photoresist layer 18 above LED chip annular groove is removed by exposure or visualization way part, and forms annular dielectric insulating film exposed region.
As shown in figure 19, utilize the method for dry quarter or chemical corrosion, the dielectric insulating film 16 by exposed at both sides part above chip is removed completely.
As shown in figure 20, remaining for LED chip the 5th photoresist layer 18 is all removed.
As shown in figure 21, then passing through evaporation, sputtering or other film manufacturing method, Figure 20 chip structure forming one deck light penetrated bed ito thin film 19, for making light penetrated bed and the conduction of light-emitting diode.
As shown in figure 22, at the surface of Figure 21 chip structure coating positive glue of the 6th photoresist layer 20(or negative glue), coating speed is at 2500-5000 rev/min, and control between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 23, the 6th photoresist layer 20 at LED chip halfpace top is removed by exposure or visualization way part, and forms light penetrated bed ito thin film exposed region.
As shown in figure 24, utilize PECVD or other coating technique, the chip structure surface preparation layer of metal alloy-layer 21 shown in Figure 23.
As shown in figure 25, at the surface of Figure 24 structure coating positive glue of the 7th photoresist layer 22(or negative glue), coating speed at 2500-5000 rev/min, and controls between 90 degrees Celsius-100 degrees Celsius to coating temperature, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 26, removed above LED chip by exposure or visualization way part by the 7th photoresist layer 22 of both side surface, retain ring-type and the 7th square photoresist layer 22 at flip-chip halfpace top.And to be formed below halfpace and endless metal alloy-layer exposed region on halfpace.Can find out in Figure 26, the 7th remaining photoresist layer 22 is divided into two parts, all be positioned on the step of LED chip, the metal alloy layer exposed region between the 7th photoresist layer 22 of ring-type and the 7th square photoresist layer 22 is used for P-type electrode and two N-type electrode are isolated.
As shown in figure 27, utilize the method for dry quarter or chemical corrosion, remove not by the metal alloy layer 21 that the 7th photoresist layer 22 covers, also remove silicon dioxide layer 10, metal level 11 and the light penetrated bed ito thin film 19 between ring-type the 7th photoresist layer 22 and square 7th photoresist layer 22 simultaneously.Original smooth penetrated bed ito thin film 19 will be divided into N-type electrode light penetrated bed ito thin film 191 and P-type electrode light penetrated bed ito thin film 192.
As shown in figure 28, remaining for LED chip the 6th photoresist layer 20 and the 7th photoresist layer 22 are all removed, and form cyclic n nitroso compound type electrode and a P-type electrode, P-type electrode is by cyclic n nitroso compound type electrodes surrounding.
As shown in figure 29, in order to improve the luminous efficiency of LED chip further, utilizing ICP, RIE or other lithographic technique to etch substrate 1, and forming multiple attachment hole 27.
As shown in figure 30, utilize glue spreading method that the nano-phosphor liquid prepared is coated on substrate 1 surface equably.Then toast in the baking oven of 100-180 degree Celsius, the time is 10 minutes-1 hour, finally forms the uniform nano fluorescent bisque 28 of one deck on substrate 1 surface.
To the LED chip in Figure 30, the present invention uses the main making step of the high power LED lamp of ceramic heat-dissipating to complete.
This invention uses the N-type electrode of the high power LED lamp of ceramic heat-dissipating mainly to comprise N-type electrode light penetrated bed ito thin film 191 and N-type electrode metal alloy layer 23, wherein N-type electrode light penetrated bed ito thin film 191 is hierarchic structure, and hierarchic structure bottom is connected with N-type layer 3 exposed region of chip both sides; Hierarchic structure top is connected with N-type electrode metal alloy layer 23, metal level 11 and dielectric insulating film 16, and wherein N-type electrode metal alloy layer 23 is positioned at the top on hierarchic structure top, and metal level 11 and dielectric insulating film 16 are positioned at the below on hierarchic structure top.
The P-type electrode of LED chip mainly comprises P-type electrode metal alloy layer 24 and P-type electrode light penetrated bed ito thin film 192, be connected with P-type electrode metal alloy layer 24 above P-type electrode light penetrated bed ito thin film 192, P-type electrode light penetrated bed ito thin film 192 surrounding extends downward light penetrated bed 9 and is limited to wherein by metal level 11 and silicon dioxide layer 10; N-type electrode metal alloy layer 23 and P-type electrode metal alloy layer 24 are positioned at same level.
In addition, can find out and comprise through large-area metal level 11, N-type electrode metal alloy layer 23 and P-type electrode metal alloy layer 24, also can reach heat radiation maximum area.
As shown in figure 31, N-type electrode surrounds P-type electrode, reaches most uniform current, and makes luminous zone and illumination effect reach the most uniform perfect condition.
As shown in figure 32, above chip and both sides four sides bright dipping and metal level 11 reflect, can greatly promote chip light emitting efficiency.
As shown in figure 33, two N-type electrode metal alloy layers 23 are connected with radiator structure 26 respectively by pcb board 25 with P-type electrode metal alloy layer 24.Because two N-type electrode metal alloy layers 23 and P-type electrode metal alloy layer 24 position are in same level, when making they and pcb board 25 soldering, the thickness of soldering layer can effectively control, and avoids rosin joint or sealing-off.
Use a high power LED lamp for ceramic heat-dissipating, comprise ceramic heat-dissipating pedestal, at a fixing circuit board of ceramic heat-dissipating pedestal, be connected with white light LEDs flip-chip at circuit board, above white light LEDs flip-chip, be fixed with a nontransparent lampshade; Be provided with radiating fin outwardly at the another side of ceramic heat-dissipating pedestal, radiating fin is also ceramic material.Mounting base, ceramic heat-dissipating pedestal and radiating fin are fixed by bolt.
The present invention due to the material of radiating fin and ceramic heat-dissipating pedestal be ceramic material, utilize the high conduction of ceramic material and high radiation physics characteristic, the heat energy that white light LEDs flip-chip produces can be absorbed fast and leaves, guarantee that white light LEDs flip-chip is in a constant low temperature state, and Absorbable organic halogens continued operation, thus can extend the useful life of LED.
Above by reference to the accompanying drawings to invention has been exemplary description; obvious realization of the present invention is not subject to the restrictions described above; as long as have employed the various improvement that method of the present invention is conceived and technical scheme is carried out; or design of the present invention and technical scheme directly applied to other occasion, all in protection scope of the present invention without to improve.
Claims (2)
1. one kind uses the high power LED lamp of ceramic heat-dissipating, comprise ceramic heat-dissipating pedestal, at a fixing circuit board of described ceramic heat-dissipating pedestal, be connected with white light LEDs flip-chip at described circuit board, above described white light LEDs flip-chip, be fixed with a nontransparent lampshade; Radiating fin is outwardly provided with at the another side of described ceramic heat-dissipating pedestal, described radiating fin is also ceramic material, it is characterized in that: described white light LEDs flip-chip making step is as follows: step 1, described white light LEDs flip-chip Rotating fields comprise substrate (1), resilient coating (2), N-type layer (3), N-type limiting layer (4), luminous region layer (5), P type limiting layer (6), P-type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11) respectively respectively successively; One deck male and fomale(M&F) (12) is formed in described substrate (1); Step 2, metal level (11) surface coating the first photoresist layer (13); First photoresist layer (13) of step 3, LED flip chip periphery is removed by exposure or visualization way, and forms annular exposed region; Step 4, by the N-type of expose portion respectively limiting layer (4), luminous region layer (5), P type respectively the N-type layer (3) of limiting layer (6), P-type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11) and part remove and make whole flip LED chips form halfpace structure; Step 5, first photoresist layer (13) of LED chip intermediate rest all to be removed; Step 6, be coated with the second photoresist layer (14) in the surface of step 5 gained flip-chip; Step 7, structural for LED flip chip halfpace part second photoresist layer (14) to be removed by exposure or visualization way, and form annular metallic layer exposed region; Step 8, the metal level (11) of expose portion and silicon dioxide layer (10) to be removed, form annular groove; Step 9, remaining for LED flip chip the second photoresist layer (14) all to be removed; Step 10, the surface of step 9 gained LED flip chip coating the 3rd photoresist layer (15); Step 11, the 3rd photoresist layer (15) on LED chip surface to be removed by exposure or visualization way part, form halfpace outer wall exposed region and form annular exposed region on halfpace; Step 12, directly prepare one deck dielectric insulating film (16) in the surface of step 11 gained LED flip chip; Step 13, the surface of step 12 gained LED flip chip coating the 4th photoresist layer (17); Step 14, removal part the 4th photoresist layer (17), only retain the 4th photoresist layer (17) of halfpace outer wall vertical coating; Step 15, remove portion dielectric insulating film (16), only retain the dielectric insulating film (16) in annular groove on dielectric insulating film (16) and halfpace that halfpace outer wall vertical arranges; Step 16, removal the 3rd all photoresist layer (15) of residue and the 4th photoresist layer (17); Step 17, the surface of step 16 gained LED flip chip coating the 5th photoresist layer (18); Step 18, the 5th photoresist layer (18) above annular groove on halfpace to be removed, and form annular dielectric insulating film exposed region; Step 19, will to remove completely by the dielectric insulating film (16) of exposed at both sides part above chip; The 5th photoresist layer (18) that step 20, removal residue are all; Step 21, on the surface of step 20 gained LED flip chip, form one deck light penetrated bed ito thin film (19); Step 22, the surface of step 21 gained LED flip chip coating the 6th photoresist layer (20); 6th photoresist layer (20) at step 23, removal LED flip chip halfpace top, and form light penetrated bed ito thin film exposed region; Step 24, prepare a metal alloy layer (21) in the surface of step 23 gained LED flip chip; Step 25, the surface of step 24 gained LED flip chip add the 7th photoresist layer (22); 7th photoresist layer (22) of step 26, removal part, only retains ring-type and the 7th square photoresist layer (22) at flip-chip halfpace top; Step 27, removal, not by the metal alloy layer (21) that the 7th photoresist layer (22) covers, also remove silicon dioxide layer (10), metal level (11) and the light penetrated bed ito thin film (19) between ring-type the 7th photoresist layer (22) and square 7th photoresist layer (22) simultaneously; Light penetrated bed ito thin film (19) is divided into two independently parts: N-type electrode light penetrated bed ito thin film (191) and P-type electrode light penetrated bed ito thin film (192); Step 28, remaining 6th photoresist layer (20) and the 7th photoresist layer (22) all to be removed, and form cyclic n nitroso compound type electrode and a P-type electrode, P-type electrode is by cyclic n nitroso compound type electrode bag; Step 29, utilize ICP, RIE to substrate (1) carry out etching formed multiple attachment hole (27); Nano fluorescent bisque (28) sticks to described substrate (1) surface by described multiple attachment hole (27), utilize glue spreading method that the nano-phosphor liquid prepared is coated on substrate (1) surface equably, then toast in the baking oven of 100-180 degree Celsius, time is 10 minutes-1 hour, finally forms the uniform nano fluorescent bisque (28) of one deck on substrate (1) surface; This chip is etched into halfpace structure and forms cyclic n nitroso compound type electrode and cylindricality P-type electrode, and cylindricality P-type electrode is by cyclic n nitroso compound type electrodes surrounding, and the solder side that described cyclic n nitroso compound type electrode and described cylindricality P-type electrode are connected with pcb board is in same level height; Described cyclic n nitroso compound type electrode is connected with radiator structure (26) by respective pcb board with described P-type electrode; N-type electrode mainly comprises N-type electrode light penetrated bed ito thin film (191) and N-type electrode metal alloy layer (23), and wherein N-type electrode light penetrated bed ito thin film (191) is hierarchic structure, and hierarchic structure bottom is connected with N-type layer (3) exposed region of chip; Hierarchic structure top is connected with N-type electrode metal alloy layer (23), metal level (11) and dielectric insulating film (16), wherein N-type electrode metal alloy layer (23) is positioned at the top on hierarchic structure top, and metal level (11) and dielectric insulating film (16) are positioned at the below on hierarchic structure top; P-type electrode mainly comprises P-type electrode metal alloy layer (24) and P-type electrode light penetrated bed ito thin film (192), P-type electrode light penetrated bed ito thin film (192) top is connected with P-type electrode metal alloy layer (24), and P-type electrode light penetrated bed ito thin film (192) surrounding extends downward light penetrated bed (9) and is limited to wherein by the metal level (11) of below and silicon dioxide layer (10); N-type electrode metal alloy layer (23) and P-type electrode metal alloy layer (24) are positioned at same level.
2. use the high power LED lamp of ceramic heat-dissipating according to claim 1, it is characterized in that: mid portion and the bottom of described dielectric insulating film (16) and hierarchic structure parallel, and play the effect of isolating n-type electrode light penetrated bed ito thin film (191).
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| CN201210044889.4A CN102593304B (en) | 2012-02-27 | 2012-02-27 | High-power light-emitting diode (LED) light using ceramic for radiating |
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| CN103915556B (en) * | 2012-02-27 | 2016-06-29 | 俞国宏 | A kind of high power LED lamp using ceramic heat-dissipating |
| CN111987211B (en) * | 2015-11-18 | 2024-01-30 | 晶元光电股份有限公司 | Light-emitting element |
| CN108493306B (en) * | 2018-03-27 | 2020-09-08 | 北京大学 | Preparation method of high-voltage high-power GaN-based LED array chip |
| CN111509097B (en) * | 2020-06-30 | 2020-10-20 | 华引芯（武汉）科技有限公司 | High-power semiconductor light-emitting device and preparation method thereof |
| CN112384015B (en) * | 2020-11-06 | 2021-07-13 | 浙江大学 | Children mental health growth evaluation instrument |
| CN113363369B (en) * | 2021-05-31 | 2022-09-20 | 华中科技大学 | LED quantum dot radiating fin, LED and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
| CN1897315A (en) * | 2005-07-14 | 2007-01-17 | 桦晶科技股份有限公司 | Light-emitting diodes (LED) packing structure |
| CN202091861U (en) * | 2011-06-10 | 2011-12-28 | 北京中智锦成科技有限公司 | LED light emitting module using ceramic for heat dissipation |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100568297B1 (en) * | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
| US7166483B2 (en) * | 2004-06-17 | 2007-01-23 | Tekcore Co., Ltd. | High brightness light-emitting device and manufacturing process of the light-emitting device |
| US8680534B2 (en) * | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
| JP2006278751A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | Garium nitride-based semiconductor light emitting element |
| JPWO2006112039A1 (en) * | 2005-04-01 | 2008-11-27 | 松下電器産業株式会社 | Surface-mount optical semiconductor device and manufacturing method thereof |
| CN1901238A (en) * | 2005-07-20 | 2007-01-24 | 桦晶科技股份有限公司 | Package structure of light emitting diode (LED) no lining up |
| JP2008135694A (en) * | 2006-10-31 | 2008-06-12 | Hitachi Cable Ltd | Led module |
| TWI331413B (en) * | 2007-02-16 | 2010-10-01 | Epistar Corp | Led flip chip package structure and manufacture method thereof |
| CN101488539B (en) * | 2008-01-17 | 2010-12-08 | 晶元光电股份有限公司 | Light emitting element |
| CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| KR20090103292A (en) * | 2008-03-28 | 2009-10-01 | 서울반도체 주식회사 | Light emitting diode package |
| CN201804904U (en) * | 2010-03-15 | 2011-04-20 | 赖哲毅 | High-light and high-efficiency LED |
| CN201804913U (en) * | 2010-09-30 | 2011-04-20 | 江阴长电先进封装有限公司 | Wafer-level light emitting diode (LED) packaging structure |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN102354721A (en) * | 2011-11-04 | 2012-02-15 | 祝进田 | Manufacturing method of LED (light-emitting diode) chip with inverted structure |
| CN103915556B (en) * | 2012-02-27 | 2016-06-29 | 俞国宏 | A kind of high power LED lamp using ceramic heat-dissipating |
| CN103943747B (en) * | 2012-02-27 | 2015-12-30 | 义乌市运拓光电科技有限公司 | A kind of high power LED lamp using ceramic heat-dissipating |
-
2012
- 2012-02-27 CN CN201410172746.0A patent/CN103943747B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
| CN1897315A (en) * | 2005-07-14 | 2007-01-17 | 桦晶科技股份有限公司 | Light-emitting diodes (LED) packing structure |
| CN202091861U (en) * | 2011-06-10 | 2011-12-28 | 北京中智锦成科技有限公司 | LED light emitting module using ceramic for heat dissipation |
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| CN103943747A (en) | 2014-07-23 |
| CN104037317A (en) | 2014-09-10 |
| CN103915557B (en) | 2016-04-06 |
| CN103915557A (en) | 2014-07-09 |
| CN103943769B (en) | 2016-04-06 |
| CN103943747B (en) | 2015-12-30 |
| CN102593304B (en) | 2014-07-30 |
| CN102593304A (en) | 2012-07-18 |
| CN103943769A (en) | 2014-07-23 |
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