CN103943769A - High-power LED lamp with heat radiated through ceramics - Google Patents

Abstract

The invention relates to a high-power LED lamp using ceramic heat dissipation, comprising a ceramic heat dissipation base (6), a circuit board is fixed on one side of the ceramic heat dissipation base (6), and a white LED flip-chip is connected to the circuit board chip (5), a non-transparent lampshade is fixed above the white LED flip-chip (5); outwardly protruding heat dissipation fins (61) are provided on the other side of the ceramic heat dissipation base (6), The heat dissipation fins (61) are also made of ceramic material. Since the materials of the heat dissipation fins and the ceramic heat dissipation base are ceramic materials, the present invention can quickly absorb and dissipate the heat energy generated by the white LED flip chip by utilizing the high conduction and high radiation physical characteristics of the ceramic material, ensuring that the white light LED flip chip The chip is in a constant low temperature state, and can operate stably and continuously, thus prolonging the service life of the LED.

Description

A high-power LED lamp using ceramic heat dissipation

technical field

The application date of this invention is February 27, 2012, the application number is: 201210044889.4, and the divisional application of the invention patent application named "a high-power LED lamp using ceramic heat dissipation". The invention relates to an LED lamp, in particular to a high-power LED lamp using ceramics for heat dissipation.

Background technique

Due to the large heat dissipation of LED lamps, if the heat dissipation cannot be carried out in time, especially high-power LEDs will burn out electronic components after a long time, affecting the normal use and life of LED lamps. The heat dissipation devices on the market now usually use metal heat dissipation, but metal heat dissipation is not as effective as ceramic materials.

In addition, the advantages of using a sapphire substrate are good chemical stability, no absorption of visible light, moderate price, and relatively mature manufacturing technology, so it has become the most common substrate for GaN growth. During the LED packaging process, the sapphire substrate surface is directly fixed on the heat sink. During the working process of the LED, its light-emitting area is the source of heat generation of the device. Since the sapphire substrate itself is an insulator material, and its thermal conductivity is poorer than that of GaN materials, the working current of this formally mounted LED device is limited to ensure the luminous efficiency and working life of the LED. In order to improve the heat dissipation performance of the device, people have designed an LED chip structure, that is, a flip-chip LED chip.

In addition, in the structure of the traditional sapphire substrate GaN chip, the electrodes are just located on the light-emitting surface of the chip. Due to the limited electrical conductivity of the p-GaN layer, it is required to deposit a metal layer for current diffusion on the surface of the p-GaN layer. This current diffusion layer is composed of Ni and Au, which will absorb part of the light, thereby reducing the light extraction efficiency. If the chip is flipped, the current diffusion layer (metal reflective layer) becomes a reflective layer of light, so that light can be emitted through the sapphire substrate, thereby improving the light extraction efficiency.

Since the flip chip design was proposed, people have done a lot of research and exploration on its feasibility. Due to the limitations of LED chip design, the packaging yield has been very low. The reasons are as follows: first, the area of the N-type electrode is relatively small, and it is difficult to align with the corresponding area of the PCB board; The position is much higher, which is easy to cause virtual soldering and desoldering; third, in order to make N-type electrodes, it is often necessary to artificially remove a large part of the active area, which greatly reduces the light-emitting area of the device and directly affects the LED light emission. efficiency.

Furthermore, although the luminous efficiency of LEDs has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm/W). So, what factors affect the luminous efficiency of LED? As far as white light LED is concerned, the luminous efficiency of its packaged product is determined by the product of internal quantum efficiency, electrical injection efficiency, extraction efficiency and packaging efficiency. As shown in Figure 35, the device (such as LED, LD, etc.) structure is grown on the substrate 30 by using MOCVD, VPE, MBE or LPE technology. 32 . P-type material layer 33 , P-type electrode 34 , P-level solder layer 35 , PCB board 36 and cooling plate 40 . The N-type electrode 37 , the N-level solder layer 38 and the PCB board 39 are connected sequentially between the N-type material layer 31 and the heat sink 40 .

The technical defects of the traditional LED flip chip are as follows:

1. The N-type electrode 37 is far away from the P-type electrode 34 in the horizontal direction, and the N-type electrode 37 has strict requirements on the position design of the PCB board 39 below it, which affects the packaging yield.

2. The position of the N-type electrode 37 is much higher than that of the P-type electrode 34, resulting in a large gap between it and the PCB board 39 below, and it is easy to make the N-level solder layer 38 too long during soldering, resulting in false soldering or detachment Welding occurs.

3. In order to allow welding between the N-type electrode 37 and the PCB board 39 below it, a large part of the light-emitting area needs to be removed, which affects the light-emitting efficiency of the LED chip.

4. The electrode area is not large enough, which affects the injection current efficiency and further affects the luminous efficiency of the LED chip.

5. P-type electrodes and N-type electrodes are located on both sides of the chip, resulting in different electron flow paths, as shown in Figure 36, resulting in uneven resistance and uneven light emission in the light-emitting area of the chip, which affects the luminous efficiency of the LED chip.

Contents of the invention

The present invention designs a high-power LED lamp using ceramic heat dissipation, which solves the following technical problems:

(1) Due to the large heat dissipation of high-power LED lamps, if the heat dissipation cannot be carried out in time, especially high-power LEDs will burn out electronic components after a long time, affecting the normal use and life of LED lamps.

(2) The N-type electrode area and the P-type electrode area are relatively small, and it is difficult to align with the corresponding area of the PCB board, which will affect the packaging effect and the excellent rate of LED products;

(3) The position of the N-type electrode is much higher than that of the P-type electrode, which is easy to cause virtual welding and desoldering;

(4) In order to make N-type electrodes, it is often necessary to artificially remove a large part of the active area, which greatly reduces the light-emitting area of the device and directly affects the luminous efficiency of the LED;

(5) The area of the P-type electrode and the N-type electrode is not large enough, which affects the injection current and directly affects the luminous efficiency of the LED chip;

(6) P-type electrodes and N-type electrodes are located on both sides of the chip, resulting in different electron flow paths, resulting in uneven resistance, and uneven light emission in the light-emitting area of the chip, which affects the luminous efficiency of the LED chip.

In order to solve the above-mentioned technical problems that exist, the present invention adopts the following scheme:

A high-power LED lamp using ceramic heat dissipation, comprising a ceramic heat dissipation base (60), a circuit board is fixed on one side of the ceramic heat dissipation base (60), and a white LED flip chip (50 ), a non-transparent lampshade is fixed above the white LED flip chip (50); on the other side of the ceramic heat dissipation base (60), there are outwardly protruding heat dissipation fins (61), and the heat dissipation The fins (61) are also made of ceramic material, and it is characterized in that: the white LED flip chip (13) layer structure sequentially includes a substrate (1), a buffer layer (2), an N-type layer (3), and an N-type layer respectively Confinement layer (4), light-emitting region layer (5), P-type respectively confinement layer (6), P-type layer (7), P-type ohmic contact layer (8), light-transmitting layer (9), silicon dioxide layer (10), metal layer (11), coated with a layer of nano-phosphor powder layer (28) on the surface of the substrate (1), characterized in that: the chip is etched into a stepped structure and forms a ring-shaped N-type electrode and a columnar The P-type electrode, the columnar P-type electrode is surrounded by the ring-shaped N-type electrode, and the solder surface of the ring-shaped N-type electrode and the columnar P-type electrode and the PCB board are at the same level.

Further, the N-type electrode mainly includes an ITO film (191) of the N-type electrode light-transmitting layer and an N-type electrode metal alloy layer (23), wherein the ITO film (191) of the N-type electrode light-transmitting layer has a ladder structure, and the lower part of the ladder structure is It is connected to the exposed area of the N-type layer (3) on both sides of the chip; the upper part of the ladder structure is connected to the N-type electrode metal alloy layer (23), the metal layer (11) and the insulating dielectric film (16), wherein the N-type electrode metal alloy layer (23) Located above the upper part of the ladder structure, the metal layer (11) and the insulating dielectric film (16) are located below the upper part of the ladder structure; the P-type electrode mainly includes the P-type electrode metal alloy layer (24) and the P-type electrode light penetration layer ITO film (192), the P-type electrode light-transmitting layer ITO film (192) is connected to the P-type electrode metal alloy layer (24), and the P-type electrode light-transmitting layer ITO film (192) extends downward to the light penetrating layer (9) and confining metal layer (11) and silicon dioxide layer (10) therein;

The N-type electrode metal alloy layer (23) and the P-type electrode metal alloy layer (24) are located on the same horizontal plane.

Further, the insulating dielectric film (16) is parallel to the middle part and the lower part of the ladder structure, and plays the role of isolating the ITO thin film (191) of the light-transmitting layer of the N-type electrode.

Further, a layer of concave-convex surface (12) is formed in the substrate (1).

Furthermore, the transition between the substrate (1) and the buffer layer (2) is through a concave-convex surface (12).

Further, the annular N-type electrode and the P-type electrode are connected to the heat dissipation structure (26) through respective PCB boards.

Further, a plurality of attachment holes (27) are formed on the substrate (1) by etching, and the nano phosphor layer (28) adheres to the substrate (1) through the plurality of attachment holes (27) surface.

Further, the heat dissipation fins (61) are cylindrical heat dissipation bumps.

Further, the heat dissipation fins (61) are square heat dissipation bumps.

Compared with ordinary high-power LED lamps, the high-power LED lamp using ceramic heat dissipation has the following beneficial effects:

(1) Since the heat dissipation fins and the ceramic heat dissipation base are made of ceramic material, the present invention can quickly absorb and dissipate the heat energy generated by the white LED flip chip by utilizing the high conductivity and high radiation physical characteristics of the ceramic material, ensuring white light The LED flip chip is in a constant low temperature state, and can operate stably and continuously, thus prolonging the service life of the LED.

(2) In the present invention, a ring-shaped nano-phosphor powder layer is attached to the substrate through the attachment hole. Compared with ordinary phosphor powder, the nano-phosphor powder layer can make the white light emitted by the chip brighter and more reliable.

(3) In the present invention, since the silicon dioxide layer and the metal layer under the P-type electrode are completely wrapped by the P-type electrode light-transmitting layer ITO film, the exposed area of the P-type electrode light-transmitting layer ITO film is increased, thereby increasing The area of the light penetrating layer is increased, and the luminous efficiency of the LED is improved.

(4) In the present invention, since the chip structure includes N-type electrodes and P-type electrodes, the area of the P-electrode and N-electrode layers is maximized, the maximum injection current is obtained, and the luminous efficiency is improved.

(5) Since the N-type electrode adopts a stepped structure, only a small part of the active area is required to be removed in the present invention, which ensures the maximization of the area of the light reflection layer and obtains the best luminous efficiency.

(6) Since the present invention adopts the ring-shaped N-type electrode layer to surround the columnar P-type electrode layer, the most uniform current can be realized, so that the light-emitting area is the most uniform.

(7) In the present invention, because the N-type electrode layer and the P-type electrode layer are on the same plane, the package yield is higher.

Description of drawings

Fig. 1: a schematic diagram of LED chip manufacturing process step 1 in the present invention;

Fig. 2: schematic diagram of LED chip manufacturing process step 2 in the present invention;

Fig. 3: a schematic diagram of step 3 of the LED chip manufacturing process in the present invention;

Fig. 4: Schematic diagram of step 4 of the LED chip manufacturing process in the present invention;

Figure 5: a schematic diagram of step 5 of the LED chip manufacturing process in the present invention;

Fig. 6: Schematic diagram of step 6 of the LED chip manufacturing process in the present invention;

Fig. 7: Schematic diagram of step 7 of the LED chip manufacturing process in the present invention;

Figure 8: Schematic diagram of step 8 of the LED chip manufacturing process in the present invention;

Fig. 9: a schematic diagram of step 9 of the LED chip manufacturing process in the present invention;

Fig. 10: a schematic diagram of LED chip manufacturing process step 10 in the present invention;

Figure 11: Schematic diagram of LED chip manufacturing process step 11 in the present invention;

Figure 12: Schematic diagram of step 12 of the LED chip manufacturing process in the present invention;

Figure 13: a schematic diagram of step 13 of the LED chip manufacturing process in the present invention;

Figure 14: Schematic diagram of step 14 of the LED chip manufacturing process in the present invention;

Figure 15: Schematic diagram of step 15 of the LED chip manufacturing process in the present invention;

Figure 16: Schematic diagram of step 16 of the LED chip manufacturing process in the present invention;

Figure 17: Schematic diagram of step 17 of the LED chip manufacturing process in the present invention;

Figure 18: Schematic diagram of LED chip manufacturing process step 18 in the present invention;

Figure 19: Schematic diagram of LED chip manufacturing process step 19 in the present invention;

Figure 20: Schematic diagram of LED chip manufacturing process step 20 in the present invention;

Figure 21: Schematic diagram of step 21 of the LED chip manufacturing process in the present invention;

Figure 22: Schematic diagram of step 22 of the LED chip manufacturing process in the present invention;

Figure 23: Schematic diagram of step 23 of the LED chip manufacturing process in the present invention;

Figure 24: Schematic diagram of step 24 of the LED chip manufacturing process in the present invention;

Figure 25: Schematic diagram of step 25 of the LED chip manufacturing process in the present invention;

Figure 26: Schematic diagram of step 26 of the LED chip manufacturing process in the present invention;

Figure 27: Schematic diagram of step 27 of the LED chip manufacturing process in the present invention;

Figure 28: Schematic diagram of step 28 of the LED chip manufacturing process in the present invention;

Figure 29: Schematic diagram of step 29 of the LED chip manufacturing process in the present invention;

Figure 30: Schematic diagram of the structure of a high-power LED lamp using ceramic heat dissipation in the present invention;

Figure 31: Top view of Figure 30;

Figure 32: Schematic rendering of light reflection in Figure 28;

Figure 33: A schematic diagram of the connection between the high-power LED lamp and the heat dissipation structure using ceramic heat dissipation in the present invention;

Figure 34: Schematic diagram of the three-dimensional structure of a high-power LED lamp using ceramic heat dissipation in the present invention;

Figure 35: Schematic diagram of LED chip structure in the prior art;

Figure 36: Schematic diagram of electron flow in Figure 34.

Explanation of reference signs:

1—substrate; 2—buffer layer; 3—N type layer; 4—N type separate confinement layer; 5—light-emitting region layer; 6—P type separate confinement layer; 7—P type layer; 8—P type ohmic contact 9—light penetration layer; 10—silicon dioxide layer; 11—metal layer; 12—concave-convex surface; 13—first photoresist layer; 14—second photoresist layer; 15—third photoresist layer Adhesive layer; 16—insulating dielectric film; 17—the fourth photoresist layer; 18—the fifth photoresist layer; 19—light penetrating layer ITO film; 191—N type electrode light penetrating layer ITO film; 192— P-type electrode light penetration layer ITO film; 20—sixth photoresist layer; 21—metal alloy layer; 22—seventh photoresist layer; 23—N-type electrode metal alloy layer; 24—P-type electrode metal alloy layer; 25—PCB board; 26—radiation structure; 27—attachment hole; 28—nano phosphor layer;

30—substrate; 31—N-type material layer; 32—light-emitting area; 33—P-type material layer; 34—P-type electrode; 35—P-level solder layer; 36—PCB board; 37—N-type electrode; 38— N-level solder layer; 39—PCB board; 40—radiating plate;

50—white LED flip-chip; 51—installation base; 52—bolt; 60—ceramic heat dissipation base; 61—radiation fin.

Detailed ways

Below in conjunction with Fig. 1 to Fig. 34, the present invention will be further described:

As shown in FIG. 1 , the substrate 1 is a carrier, generally made of materials such as sapphire, silicon carbide, silicon, GaAs, AlN, ZnO or GaN.

On the substrate 1, a layer of concave-convex surface 12 is firstly formed by etching. The concave-convex surface 12 can reduce the total reflection of light in the chip and increase the light extraction rate.

The buffer layer 2 is a transition layer on which high-quality N, P, quantum wells and other materials are grown.

LED is composed of pn structure, buffer layer 2, N-type layer 3, N-type confinement layer 4, P-type confinement layer 6 and P-type layer 7 are to form P and N-type materials required for making LED. The light-emitting area layer 5 is the light-emitting area of the LED, and the color of the light is determined by the material of the active area.

P-type ohmic contact layer 8 is the last layer of material growth, and the carrier doping concentration of this layer is relatively high, the purpose is to make smaller ohmic contact resistance.

The P-type metal ohmic contact layer is not formed by growth, but by evaporation or sputtering. One of the purposes is to make the electrodes of the device, and the other is to package and wire.

Then, by evaporation, sputtering or other thin film production methods, a layer of ITO film is formed on the surface of the P-type ohmic contact layer 8, which is used to make the light-transmitting layer 9 of the light-emitting diode. The ITO film is generally made of indium tin oxide, which is a A transparent semiconductor conductive film can generally increase the light-emitting efficiency of LEDs by 20%-30%. Then, by evaporation, sputtering or other thin film manufacturing methods, a total reflection mirror with a multilayer structure of silicon dioxide layer 10 and metal layer 11 is formed on the light-transmitting layer 9, and the silicon dioxide layer 10 can improve the current expansion of the light-emitting region. Reduce the current accumulation effect, and the metal layer 11 as a reflector can reduce the absorption of light by the P electrode, increase the extraction of light from the edge of the sapphire substrate, and can be used as a heat conduction plate for the chip; the metal can be selected from aluminum, silver or gold, etc. Material.

As shown in Figure 2, the first photoresist layer 13 (positive or negative resist) is coated on the surface of the metal layer 11 of the structure in Figure 1, the coating speed is 2500-5000 rpm, and the coating temperature is controlled by 90 Between Celsius and 100 Celsius, bake in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 2 minutes respectively.

As shown in FIG. 3 , the first photoresist layer 13 around the LED flip chip is removed by exposure or development, and an exposed area of the ring-shaped metal layer is formed. the

As shown in FIG. 4 , by dry etching or chemical etching, the exposed parts of the N-type confinement layer 4, the light-emitting region layer 5, the P-type confinement layer 6, the P-type layer 7, the P-type ohmic contact layer 8, Light penetrating layer 9, silicon dioxide layer 10, metal layer 11 and part of N-type layer 3 are removed so that the entire LED chip forms a terraced structure.

As shown in FIG. 5 , the remaining first photoresist layer 13 in the middle of the LED chip is completely removed.

As shown in Figure 6, the second photoresist layer 14 (positive or negative resist) is coated on the surface of the structure in Figure 5, the coating speed is 2500-5000 rpm, and the coating temperature is controlled at 90 degrees Celsius-100 Bake in an oven or on the surface of an iron plate between 100°C and 30 minutes and 2 minutes respectively.

As shown in FIG. 7 , part of the second photoresist layer 14 on the terrace structure of the LED flip chip is removed by exposure or development, and an exposed area of the ring-shaped metal layer is formed. the

As shown in FIG. 8 , the exposed metal layer 11 and the silicon dioxide layer 10 are removed by dry etching or chemical etching to form an annular groove.

As shown in FIG. 9 , the remaining second photoresist layer 14 of the LED flip chip is completely removed. the

As shown in Figure 10, the third photoresist layer 15 (positive or negative) is coated on the surface of the LED chip structure obtained in Figure 9, the coating speed is 2500-5000 rpm, and the coating temperature is controlled Between 90 degrees Celsius and 100 degrees Celsius, bake in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 2 minutes respectively.

As shown in FIG. 11 , the third photoresist layer 15 on the surface of the LED chip is partially removed by exposure or development to form an exposed area on the outer wall of the terrace and a ring-shaped exposed area on the terrace. the

As shown in Figure 12, using PECVD or other coating techniques, a layer of insulating dielectric film 16 is directly prepared on the surface of the structure shown in Figure 11, and the insulating dielectric film 16 is made of a silicon dioxide layer or other insulating media with good light transmission properties. The thickness is between 100nm-500nm. The insulating dielectric film 16 uniformly covers the LED chip with the stepped structure and the surface of the third photoresist layer 15 by coating.

As shown in Figure 13, the fourth photoresist layer 17 (positive or negative resist) is coated on the surface of the LED structure in Figure 12, the coating speed is 2500-5000 rpm, and the coating temperature is controlled at 90 degrees Celsius- Between 100 degrees Celsius, bake in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 2 minutes respectively.

As shown in FIG. 14 , the fourth photoresist layer 17 on the surface of the LED chip is partially removed by exposure or development, and only the fourth photoresist layer 17 coated vertically on the outer wall of the terrace remains. the

As shown in FIG. 15, a part of the insulating dielectric film 16 is removed by dry etching or chemical etching, and only the insulating dielectric film 16 arranged vertically on the outer wall of the step and the insulating dielectric film 16 in the annular groove on the step are retained. The height of the insulating dielectric film 16 in the upper annular groove is equal to the thickness of the metal layer 11 and the silicon dioxide layer 10 .

As shown in FIG. 16 , the remaining third photoresist layer 15 and fourth photoresist layer 17 of the LED chip are all removed. the

As shown in Figure 17, the fifth photoresist layer 18 (positive or negative resist) is coated on the surface of the chip structure in Figure 16, the coating speed is 2500-5000 rpm, and the coating temperature is controlled at 90 degrees Celsius- Between 100 degrees Celsius, bake in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 2 minutes respectively.

As shown in FIG. 18 , the fifth photoresist layer 18 above the annular groove of the LED chip is partially removed by exposure or development, and an exposed area of an annular insulating dielectric film is formed.

As shown in FIG. 19 , dry etching or chemical etching is used to completely remove the insulating dielectric film 16 on the exposed portion on both sides above the chip.

As shown in FIG. 20 , the remaining fifth photoresist layer 18 of the LED chip is completely removed.

As shown in FIG. 21 , a layer of light-transmitting ITO film 19 is formed on the chip structure in FIG. 20 by evaporation, sputtering or other thin-film manufacturing methods, which is used to make the light-transmitting layer and conduct electricity of light-emitting diodes.

As shown in Figure 22, the sixth photoresist layer 20 (positive or negative resist) is coated on the surface of the chip structure in Figure 21, the coating speed is 2500-5000 rpm, and the coating temperature is controlled at 90 degrees Celsius- Between 100 degrees Celsius, bake in an oven or on the surface of an iron plate, and the baking time is 30 minutes and 2 minutes respectively.

As shown in FIG. 23 , the sixth photoresist layer 20 on the top of the terrace of the LED chip is partially removed by exposure or development, and an exposed area of the ITO thin film of the light-transmitting layer is formed. the

As shown in FIG. 24 , a metal alloy layer 21 is prepared on the surface of the chip structure shown in FIG. 23 by using PECVD or other coating techniques.

As shown in Figure 25, the seventh photoresist layer 22 (positive or negative resist) is coated on the surface of the structure in Figure 24, the coating speed is 2500-5000 rpm, and the coating temperature is controlled at 90 degrees Celsius-100 Bake in an oven or on the surface of an iron plate between 100°C and 30 minutes and 2 minutes respectively.

As shown in Figure 26, the seventh photoresist layer 22 above the LED chip on both sides is partially removed by exposure or development, and the ring-shaped and square seventh photoresist layer remains on the top of the flip-chip step twenty two. And the exposed area of the annular metal alloy layer under the terrace and on the terrace is formed. As can be seen in FIG. 26, the remaining seventh photoresist layer 22 is divided into two parts, all located on the steps of the LED chip, the ring-shaped seventh photoresist layer 22 and the square seventh photoresist layer 22. The exposed area between the metal alloy layer is used to isolate the P-type electrode from the two N-type electrodes.

As shown in FIG. 27, the metal alloy layer 21 not covered by the seventh photoresist layer 22 is removed by dry etching or chemical etching, and the ring-shaped seventh photoresist layer 22 and the square seventh photoresist layer are also removed. The silicon dioxide layer 10 , the metal layer 11 and the light-transmitting layer ITO thin film 19 are between the adhesive layer 22 . The original light-transmitting layer ITO film 19 will be divided into an N-type electrode light-transmitting layer ITO film 191 and a P-type electrode light-transmitting layer ITO film 192 .

As shown in Figure 28, the remaining sixth photoresist layer 20 and seventh photoresist layer 22 of the LED chip are all removed, and a ring-shaped N-type electrode and a P-type electrode are formed, and the P-type electrode is surrounded by a ring-shaped N-type electrode. surrounded by electrodes.

As shown in FIG. 29 , in order to further improve the luminous efficiency of the LED chip, the substrate 1 is etched by ICP, RIE or other etching techniques, and a plurality of attachment holes 27 are formed.

As shown in FIG. 30 , the prepared nano-phosphor liquid is evenly coated on the surface of the substrate 1 by means of glue coating. Then bake in an oven at 100-180 degrees Celsius for 10 minutes-1 hour, and finally form a layer of uniform nano-phosphor powder layer 28 on the surface of the substrate 1 .

Up to the LED chip in FIG. 30 , the main manufacturing steps of the high-power LED lamp using ceramic heat dissipation in the present invention have been completed.

The N-type electrode of the high-power LED lamp using ceramic heat dissipation mainly includes the N-type electrode light-transmitting layer ITO film 191 and the N-type electrode metal alloy layer 23, wherein the N-type electrode light-transmitting layer ITO film 191 has a stepped structure, The lower part of the ladder structure is connected to the exposed areas of the N-type layer 3 on both sides of the chip; the upper part of the ladder structure is connected to the N-type electrode metal alloy layer 23, the metal layer 11 and the insulating dielectric film 16, wherein the N-type electrode metal alloy layer 23 is located on the upper part of the ladder structure Above, the metal layer 11 and the insulating dielectric film 16 are located below the upper part of the stepped structure.

The P-type electrode of the LED chip mainly includes a P-type electrode metal alloy layer 24 and a P-type electrode light-transmitting layer ITO film 192. Electrode light-transmitting layer ITO thin film 192 extends down to light-transmitting layer 9 and confines metal layer 11 and silicon dioxide layer 10 therein; N-type electrode metal alloy layer 23 and P-type electrode metal alloy layer 24 are located at the same level.

In addition, it can be seen that the largest area for heat dissipation can also be achieved through the large-area metal layer 11 , the N-type electrode metal alloy layer 23 and the P-type electrode metal alloy layer 24 .

As shown in Figure 31, the N-type electrode surrounds the P-type electrode to achieve the most uniform current, and make the light-emitting area and light-emitting effect reach the most uniform ideal state.

As shown in FIG. 32 , the emission of light from the top and sides of the chip and the reflection of the metal layer 11 can greatly improve the luminous efficiency of the chip.

As shown in FIG. 33 , the two N-type electrode metal alloy layers 23 and the P-type electrode metal alloy layer 24 are respectively connected to the heat dissipation structure 26 through the PCB board 25 . Since the two N-type electrode metal alloy layers 23 and P-type electrode metal alloy layers 24 are positioned on the same horizontal plane, when they are soldered with the PCB board 25, the thickness of the solder layer can be effectively controlled to avoid false soldering or detachment. weld.

As shown in Figure 34, a high-power LED lamp using ceramic heat dissipation includes a ceramic heat dissipation base 60, a circuit board is fixed on one side of the ceramic heat dissipation base 60, and a white LED flip chip 50 is connected to the circuit board. A non-transparent lampshade is fixed above the LED flip chip 50; on the other side of the ceramic heat dissipation base 60, there are outwardly protruding heat dissipation fins 61, and the heat dissipation fins 61 are also made of ceramic material. The installation base 51 , the ceramic heat dissipation base 6 and the heat dissipation fins 61 are fixed by bolts 52 .

Since the materials of the heat dissipation fins and the ceramic heat dissipation base are ceramic materials, the present invention can quickly absorb and dissipate the heat energy generated by the white LED flip chip by utilizing the high conduction and high radiation physical characteristics of the ceramic material, ensuring that the white light LED flip chip The chip is in a constant low temperature state, and can operate stably and continuously, thus prolonging the service life of the LED.

Above, the present invention has been exemplarily described in conjunction with the accompanying drawings. Obviously, the realization of the present invention is not limited by the above-mentioned manner, as long as various improvements of the method concept and technical solutions of the present invention are adopted, or the present invention is implemented without improvement. The ideas and technical schemes directly applied to other occasions are within the protection scope of the present invention.

Claims (6)

1. A high-power LED lamp using ceramic heat dissipation, comprising a ceramic heat dissipation base (60), a circuit board is fixed on one side of the ceramic heat dissipation base (60), and a white LED flip chip is connected to the circuit board (50), a non-transparent lampshade is fixed above the white LED flip chip (50); on the other side of the ceramic heat dissipation base (60) is provided with outwardly protruding heat dissipation fins (61), the The heat dissipation fins (61) are also made of ceramic material, which is characterized in that: the layer structure of the white LED flip chip (13) sequentially includes a substrate (1), a buffer layer (2), an N-type layer (3), an N-type layer type confinement layer (4), light-emitting region layer (5), P-type confinement layer (6), P-type layer (7), P-type ohmic contact layer (8), light-transmitting layer (9), dioxide Silicon layer (10), metal layer (11), a layer of nano phosphor layer (28) is coated on the surface of the substrate (1), and the substrate (1) and the buffer layer (2) pass through the concave-convex surface ( 12) Structural transition; the chip is etched into a terrace structure and forms a ring-shaped N-type electrode and a column-shaped P-type electrode. The column-shaped P-type electrode is surrounded by a ring-shaped N-type electrode. The ring-shaped N-type electrode and the column The solder surface where the shaped P-type electrode is connected to the PCB board is at the same level; the ring-shaped N-type electrode and the P-type electrode are connected to the heat dissipation structure (26) through their respective PCB boards. 2. The high-power LED lamp using ceramic heat dissipation according to claim 1, characterized in that the N-type electrode mainly includes the N-type electrode light-transmitting layer ITO film (191) and the N-type electrode metal alloy layer (23), wherein The N-type electrode light penetrating layer ITO film (191) has a ladder structure, the lower part of the ladder structure is connected to the exposed area of the N-type layer (3) of the chip; the upper part of the ladder structure is connected to the metal alloy layer (23) and the metal layer (11) of the N-type electrode ) and the insulating dielectric film (16), wherein the N-type electrode metal alloy layer (23) is located above the upper part of the ladder structure, the metal layer (11) and the insulating dielectric film (16) are located below the upper part of the ladder structure; the P-type electrode is mainly It includes a P-type electrode metal alloy layer (24) and a P-type electrode light-transmitting layer ITO film (192), and the P-type electrode light-transmitting layer ITO film (192) is connected to the P-type electrode metal alloy layer (24). Type electrode light penetrating layer ITO film (192) extends down to the light penetrating layer (9) and confines the underlying metal layer (11) and silicon dioxide layer (10) therein; N-type electrode metal alloy layer (23) is located on the same level as the P-type electrode metal alloy layer (24). 3. The high-power LED lamp using ceramic heat dissipation according to claim 2, characterized in that: the insulating dielectric film (16) is parallel to the middle part and the lower part of the ladder structure, and serves to isolate the light penetrating layer of the N-type electrode The role of ITO thin films (191). 4. The high-power LED lamp using ceramic heat dissipation according to claim 1, characterized in that: a plurality of attachment holes (27) are formed by etching on the substrate (1), and the nano-phosphor layer (28) passes through The multiple attachment holes (27) are adhered to the surface of the substrate (1). 5. The high-power LED lamp using ceramic heat dissipation according to claim 4, characterized in that: the heat dissipation fins (61) are cylindrical heat dissipation bumps. 6. The high-power LED lamp using ceramic heat dissipation according to claim 4, characterized in that: the heat dissipation fins (61) are square heat dissipation bumps.