TWI331413B - Led flip chip package structure and manufacture method thereof - Google Patents

Description

1331413 096106124Corrected Unlined Edition Application Revision Date: 99/5/4 IX. Invention Description: [Technical Field] The present invention provides a package flip chip structure of a light-emitting diode and a manufacturing method thereof, particularly Regarding the retention of the luminescent epitaxial layer, the N-type and the p-type electrode are equal in height to perform a flip chip process. [Prior Art] Now, flip chip bonding, also known as C4 press-fitting, is a press-fit of the spectroscopy s (Area_Array), rather than the circumferential line type provided by the wire bonding and TAB connection technology as in the prior art. (Peripheral Array) is pressed, so flip chip bonding can be applied to very high density sealing process. In the process of miscellaneous + "will be overturned, face-down way, let the upper conductive end be connected to the package by the gold body and the electrode 基板 of the substrate. The flip chip packaging technology can effectively dissipate the light-emitting diode components to the outside, but the conventional technique is to connect the conductive ends of the wafers to the electrodes of the substrate due to the conductive ends of the wafers. Not equal to the height, the wafers placed on the substrate can not be maintained - flattened, and the operation is affected. $ : Refer to the first figure ' is a haircut of the prior art - a structural section view. The light-emitting diode: a crystal-based semiconductor, a first-type semiconductor, please cover - a two-type semiconductor layer 106, an N-type Lei #1Λβ a 4, a semiconductor layer (10), a P == °8 located in the portion The first type electrode 110 is located in a portion of the second type 1331413 096106124. The unlined version is amended. Date: 99/5/4 The conductor layer 106, the submount 114, and the bump 112 are located on the submount 114. Therefore, the heights of the two electrode pads of the N-type electrode pad 1〇8 and the P-type electrode pad 11〇 of the prior art are not equal, which causes the P-type electrode pad 110 and the bump 112 to be pressed during the flip chip process. After the combination 116, the N-type electrode pad 1〇8 is still not stably pressed and pressed with the bump 112, thus often causing unevenness in the applied force and making it difficult for the light-emitting diode to maintain a horizontal state. The situation in which the yield of the diode is not the same. In order to improve the above-mentioned deficiency, a need has been made for a packaged flip-chip structure of a light-emitting diode and a method of manufacturing the same. The inventors have been engaged in research and many practical experiences for many years, and have been researched and designed by a plurality of parties. In the present invention, a packaged flip-chip structure of a light-emitting diode and a manufacturing method thereof are proposed as the implementation and basis of the foregoing expectation. SUMMARY OF THE INVENTION The reason is that, in order to achieve the above object, the main purpose of the flip-chip structure of the light-emitting diode according to the present invention and the manufacturing method thereof is to keep the luminescent layer and the P-type electrode equal to each other. The capping process is carried out to further improve the process yield of the bonding between the LED and the sub-base when the Cladding is transparent. Another object of the present invention is that in the process of the light-emitting diode sealing process, the heights of the two electrode pads of the 塾 and P-type electrodes are kept at the same height, so that the N-bend: P-type electrode is bonded to the solder bumps of the sub-base. At the same time, uniformity can be achieved so that the light-emitting diode maintains a horizontal state. According to the above object of the present invention, a light-emitting diode structure includes at least a light-emitting diode, a sub-base, and at least 1 = 1331413 bumps, wherein the solder bumps are disposed on the sub-base. The structure is connected to the sub-base by solder bumps. 096106124 Amendment of the non-line version of the application revision date: 99/5/4 and the illuminating two-pole system with a smectic square 曰 ^ ^ ^ light dipole body ^ less contains - insect crystal substrate, a light worm 曰 4 - dog The structure, the metal reflective layer, the transparent electrode layer, and the Ν-type electric p-type electric hybrid, the t-green crystal structure is located on the H substrate, and more sequentially, the buffer layer, the “first-type semiconductor layer, — , into 'and the first type half layer and the second type half layer ^=3

The structure is separated from the luminescent crystal structure, and the bottom of the gap is guided. The reflective layer is located on the second type semiconductor layer, the transparent layer is on the metal reflective layer, and the Ν-type electrode is coated with the electrode: Connected to the first-type semiconductor layer, the p-type electrode 塾 is located in the portion I transparent r-containing crystal substrate, the illuminating: pole pad, the texture is located in the worm and the first type semiconductor layer and the second type semiconductor body layer are formed, the conductor The layer, the metal reflective material, the second type and the protrusion structure, and the __ and the first material are electrically coated on the transparent electrode layer. _s connection, p-type electrode pad is located at the edge, the purpose of the root paralysis, the manufacturing method of the polar body seal, the method includes at least the steps of the flip-chip of the following polar body (1) forming at least one illuminating 1331413 096106124 correction unmarked Line application correction period: 99/5/4 (3) setting at least one solder bump on the sub-base; and (4) using a flip chip method to make the light-emitting diode and sub-base by solder bumps The seat is 4 people. The process of the above-mentioned light-emitting diode comprises at least the following steps: 0) providing an epitaxial substrate;

(2) Forming-lighting insect crystal structure, located on the remote crystal substrate, the front structure of which consists of a buffer layer, a first type semiconductor layer, an active layer and a second type semiconductor layer, and the first type The bulk layer and the second type semiconductor layer have opposite electrical properties; (3) forming a photoresist layer is located on the second type semiconductor layer of the light emitting m structure, and has two gaps;

(2) providing a sub-base; (4) fabricating-protrusion structure to form a green crystal structure to form a front gap, and the bottom surface of the gap is a first type semiconductor layer; (5) removing the photoresist protective layer; (6) forming a metal counter Riding on the second group of conductor layers (7) to form a transparent electrode layer on the metal reflective layer; (8) fabricating -n-type electrorotation coating on the protrusion-type semiconductor layer connection; and through the two gaps and the first manufacturing method The -P type is electrically transferred to a portion of the transparent electrode layer. By the above steps, the coating of the light-emitting diode is completed. (IV) 096106124 is applied for the correction period.. 99/5/4 Furthermore, according to the above object of the present invention, a method for manufacturing the package of the light-emitting diode is proposed. The method comprises at least the following steps: (1) forming at least one light emitting diode; (2) providing a submount; (3) providing at least one solder bump on the submount; and (4) using a cover In the crystal mode, the light emitting diode is coupled to the submount by solder bumps. The process of the above-mentioned light-emitting diode includes at least the following steps: (1) providing an epitaxial substrate; (2) forming a green-crystal structure on the crystal substrate, wherein the light-emitting crystal structure is sequentially composed of a buffer layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and the first-type material layer and the second material conductor layer have opposite electrical properties; (3) forming a photoresist protective layer, located in the green crystal structure The second type semiconductor layer has 'and has two gaps; ^ the protrusion structure makes the hairline crystal lions form the two gaps mentioned above, and the bottom surface of the 曰1 gap is the first type semiconductor layer; (5) the photoresist protection layer is removed; (6) forming—the metal reflective layer is on the second type semiconductor layer; 1331413 (7) fabricating the -N type electrode pad to be overlaid on the protrusion: 曰 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (8) Fabrication - The 电 type electrician is on a part of the transparent electrode layer. The manufacturing method of the flip chip package of the diode is completed by the above steps. In summary, the package flip chip structure of the light emitting diode disclosed in the present invention

The wire version causes the power (4) and the P-type electrode pad to have the same height, and the process yield of the solder bumps of the two-electrode pad pressed against the sub-base when the process is lifted. The reviewer will have a better understanding and understanding of the technical features and the efficacies of the present invention. The preferred embodiments and related drawings are provided for the purpose of assisting and explaining in detail. As after. [Embodiment] The above-mentioned objects, features, and advantages of the present invention can be more clearly understood. The package flip-chip structure of the light-emitting diode according to the present invention and a method of manufacturing the same are provided. And in conjunction with the __ formula, the detailed words are as follows, wherein the same components will be described by the same component symbols (凊参(四)2图' shows the package of the light-emitting diode of the present invention: In the figure, the sealing structure includes at least one light-polar body 216, a sub-base 220 and at least one solder bump 218, wherein the solder joint 218 is disposed on the sub-base 220, and the light-emitting diode The body 216 is joined to the sub-base 220 by a solder bump 218 in a flip chip manner. 1331413 096106124 Correction of the unlined version, the date of application of the correction date: 99/5/4 a sub-base 220 is generally selected from Si a group of GaAs, Gap, ZnO, and GaN; the material of the solder bump 218 is generally selected from the group consisting of aluminum, zinc, silver, nickel, bismuth, indium, tin, chin, erbium, copper, and alloys thereof. And the group - may be a silver gum, or comprise a high-level conductive high-altitude At least one of the material groups formed by the doping of the conductive material in the polymer and the polymer, or other alternative materials.

«Monday Referring to Figure 3, there is shown a cross-sectional view of a preferred embodiment of the packaged flip-chip structure of the light-emitting diode of the present invention. In the figure, the package flip-chip structure, the light-pole body 216 to include a - crystal substrate, a light-emitting crystal structure 202, a protrusion structure 206, a metal reflective layer 2, a transparent conductive layer, and a transparent conductive layer = electrode 塾 212 and - P type electrode 塾 214, wherein the luminescent silica structure 2 () 2 is located on the suspension substrate 200, more sequentially by a buffer layer 2 〇 2 a first type semiconductor layer 2022, - active layer 2023 and a second type semiconductor layer 2〇24, and the first type of the rotating layer 2022 and the second type semiconductor layer have opposite electrical properties, and the =206 series and the light emitting crystal structure 2〇2 are separated by two gaps. And the bottom surface of the gap _ ', ', the type semiconductor layer 2022, the metal reflective layer 2G8 is located on the second type semi-conductor 2024, the transparent conductive layer 21 〇 is located on the metal anti-county 2〇8, the ν-type electrode is coated In the canine structure 206, and connected by the two gap bottom surface 2042 盥 the first type of semiconductor guide 35, the p-type electrode pad 214 is located on a portion of the transparent conductive layer _ on the sub-base 220, and the light-emitting diode 216 is A cover ^ is connected to the sub-base 220 by the bad bump 218. The material of the metal reflective layer 208 is generally selected from the group consisting of aluminum, gold, platinum silver, brocade, indium, indium, tin and alloys thereof; the transparent conductive (9) = material is selected from the group嶋, oxidation _, ox scale, indium oxide ^ and gasification 1331413 096106124 revised unlined version of the application revised date: 99/5/4 Λα ^ Λ L> · · 卞5円11 more than ^ period: outside/5/ 4 tin, and into a group; N-type electrode pad 212 is generally selected from the group consisting of Ti / A1, Cr / Au, OVPt / K ^ / Pd / Au Μ α / Ti / Au ^; p type The electrode pad 214 is generally selected from the group consisting of Ni/Au, Pd/Au, pt/Au, (4) u, exogenous, and Ta/Au.

Referring to Fig. 4, there is shown a cross-sectional view of a flip-chip structure of a light-emitting diode package of the present invention. In the figure, the structure of the LED 216 may also include a crystal substrate 200, a light-emitting crystal structure 2〇2, a protrusion structure 2〇6, a transparent conductive layer 210, an N-type electrode pad 212, and a The p-type electrode pad 214, the germanium structure 2〇2 is located on the insect crystal substrate, and is sequentially composed of a buffer layer 2〇2U-type semiconductor layer 2022, an active layer 2G23, and a second type semiconductor layer. The first-type semiconductor layer 2G22 and the second-type semiconductor layer have opposite electrical properties. The protrusion structure 206 has two gaps with the luminescent crystal structure 2〇2, and the gap bottom surface 2042 is the first-type material layer 2〇22, transparent. The conductive layer 21 (h stands on the second type semiconductor layer _ upper side). The N-type electrode pad 212 is coated on the protrusion structure, and is connected to the first-type semiconductor layer 2G22 by the two gap bottom surfaces 2042, and the p-type electrode is located at a portion. On the transparent conductive layer 21Q, the solder bumps 218 are on the sub-mount 22{) and the light-emitting bodies 216 are connected in a flip-chip manner by solder bumps 218 and sub-bases = transparent conductive layer 21 The material is generally selected from the group consisting of copper tin oxide, tin oxide, zinc emulsified, indium oxide and tin oxide. The gate electrode 212 is generally selected from the group consisting of Ti/ΑCr/Au, Cr/Pt/Au, Cr/pd/Au, and a core; the P-type electrode pad 214 is generally selected from Ni/Au, Pd. /Au,

A group consisting of Pt/Au, Ti/Au, Cr/Au, Sn/Au, and Ta/Au. Referring to Fig. 5, a flow chart showing a method of manufacturing a flip chip package of the light-emitting diode of the present invention is shown. The process steps of this method are as follows: 12

f SI 0 Qiao 24 correction unlined version ten _ μ. 〇r « Application revision date: 99/5/4 Step S51: forming at least one light-emitting diode; Step S52: providing a sub-base; Step S53: Locating at least one solder bump on the submount; and step S54. Using a flip chip method, the light emitting diode is coupled to the submount by solder bumps. Referring to Fig. 6, there is shown a flow chart of a method for manufacturing a light-emitting diode of the present invention. The process steps of the method are as follows: Step S61: providing a remote crystal substrate; Step S62. Forming a light emitting crystal structure, located on the insect crystal substrate, wherein the light emitting epitaxial structure is sequentially composed of a buffer layer and a first type semiconductor layer An active layer and a second type semiconductor layer, and the first type semiconductor layer and the second type semiconductor have opposite electrical properties; step S63: axis-light conversion, the second type semiconductor in the light level On the layer, and having two gaps; Step S64: fabricating the protrusion structure to form the two gaps in the pre-step of the green crystal structure, and the bottom surface of the gap is the first type semiconductor layer; Step S65: removing the photoresist protection layer; Step S66. Forming—the metal reflective layer is located on the second type semiconductor layer; Step S67: forming—the transparent conductive layer is located on the metal reflective layer; Step S68: fabricating the off-circuit recording on the protruding structure, and transmitting the gap through the first type semiconductor Layer connection; and 1331413 096106124 amendment unlined version of the application revision period: 99/5/4 Step S69: A P-type electrode pad is formed on a portion of the transparent conductive layer. The manufacturing method of the flip chip package of the light emitting diode is completed by the above steps. 7-1 to 7-7 are cross-sectional views showing the structure of a flip chip package manufacturing method of a light emitting diode according to a preferred embodiment of the present invention. First, please refer to the sectional view of the structure 7-1. In the figure, the structure of the light-emitting diode 216 includes at least: k for a crystal substrate 200; and a light-emitting crystal structure 2〇2 is formed on the insect crystal substrate 2, wherein The luminescent crystal structure 202 is formed by sequentially forming a buffer layer 2021, a first type semiconductor layer 2022, an active layer 2023, and a second type semiconductor layer 2 〇 24, and the first type semiconductor layer 2022 and the second type semiconductor Layer 2〇24 has the opposite electrical property'coated on the second type semiconductor layer 2024 to form a photoresist protective layer 2〇4 patterned lithography and etching process to form two gaps 2〇41; please refer to 7_2, in the figure, by etching the two gaps 2041 until a portion of the first type semiconductor layer 2022 is exposed, that is, the two gap bottom surfaces 2〇42 are exposed portions of the first type semiconductor layer 2〇22, The formation-protrusion structure 2〇6 is interposed between the bottom surfaces of the two gaps; please refer to the removal of the photoresist protection layer 2Q4 in the 7_2 figure and the partial emission epitaxial structure 202 in the figure 7-3_' Referring again to FIG. 7_4, a metal reflective layer 208 is deposited on the second type of semiconductor On the layer, re-steaming a transparent conductive layer 2 〇 on the metal reflective layer 2G8; please refer to FIG. 7_5, in which the vapor-deposited N-type electrode pad 212 is covered on the protruding structure 2〇6, and through the two gaps. The bottom surface 2〇42 is connected to the first type semiconductor layer 2022, and the p-type electrode 214 is further formed on the transparent conductive layer. Please refer to the 7-6 figure to flip the above-mentioned completed light-emitting diode.

14 [SI 1331413 body 216' and the solder bump 218 is set on the sub-base 220 096106124 to correct the unlined version of the application revision date: 99/5/4 on the packaged flip-chip method to complete the completed light-emitting diode 216 pressure The slave is on the sub-base 22 (); please refer to the figure 7-7 in the figure, which is a schematic cross-sectional view of the structure in which the light-emitting diode 216 is pressed onto the sub-base. The material of the sub-substrate 220 is generally selected from the group consisting of Si, GaAs, and GaN; the solder bumps 218 are generally selected from

Ming "'zinc' silver, recorded, antimony, indium, tin, titanium, lead, copper, and its alloys - the group ' may be silver glue, or contain selected from spontaneous conductive polymers and polymers The towel is doped with at least one material of the material group formed by the conductive material, or other alternative materials; the material of the metal reflective layer is generally selected from the group consisting of aluminum, gold, platinum, zinc, silver, brocade, yttrium, yttrium, tin The group consisting of its alloys; the transparent conductive layer 2"10 is generally selected from the group consisting of indium tin oxide, tin oxide tin, oxidized steel, oxidized steel, and tin oxide; N-polar pad 212 is generally Selected from the side,

Cr/AU, Cr/Pt/Au, Cr/Pd/Au are a group consisting of Cr/Ti/Au; p-type electrode 塾m is generally selected from Ni/Au, Pd/Au, pt/Au, Ti/ A group consisting of Au, Cr/Au, Sn/Au, and Ta/Au. Referring to Fig. 8, there is shown a flow chart showing a method of manufacturing the light-emitting diode of the present invention. The process steps of the method are as follows: Step S81: providing - an epitaxial substrate; step coffee: forming - the light-emitting crystal structure is located on the substrate of the insect, wherein the light-emitting epitaxial structure is sequentially composed of a buffer layer and a first type The semiconductor layer, iSl 15 1331413 096106124, the date of application of the amendment: 99/5/4, an active layer and a second type semiconductor layer, and the first type semiconductor layer and the second type semiconductor layer have opposite electrical properties; Step S83: Forming a photoresist protective layer on the second type semiconductor layer of the light emitting crystal structure and having two gaps; Step S84 · fabricating a protrusion structure to form two gaps in the pre-step of the light-emitting stray structure, and the bottom surface of the gap is the first type a semiconductor layer; Step S85: removing the photoresist protective layer; Step S86. Forming a metal reflective layer on the second type semiconductor layer; Step S87: fabricating the -N-type electrode layer to cover the protruding structure, and passing through the two gaps A type of semiconductor layer is connected; and step S88: forming a p-type electrode on a portion of the transparent conductive layer. The manufacturing method of the flip chip package of the light emitting diode is completed by the above steps. Referring to Figures 9-1 to 9-7, there is shown a cross-sectional view showing a method of manufacturing a flip-chip package for a light-emitting body according to another embodiment of the present invention. First, please refer to the cross-sectional view of the structure of the ninth structure. In the figure, the structure of the light-emitting diode 216 at least includes a liquid crystal substrate 200; the structure of the light-emitting crystal structure is located on the remote crystal substrate, wherein the light-emitting epitaxial structure 202 is formed by sequentially forming a buffer layer 2021, a first type semiconductor layer 2022, an active layer 2023, and a second type semiconductor layer 2024, and the first type material layer 2022 and the second type semiconductor layer have opposite electrical properties. Applying a photoresist layer 2Q4 on the first-type semiconductor layer 2024 to form a gap 2G41 by patterning lithography and a surname process, please refer to FIG. 9_2, in the figure,

16 LSI 1^31413 096106124 ^lE^gij^ Application revision date: 99/5/4 until part of the first type semiconductor layer 2022 is exposed by etching the above two gaps 2041, that is, the two gap bottom surfaces 2Q42 are The exposed portion of the first type semiconductor layer 2〇22, the formation-protrusion structure 2〇6 is interposed between the bottom surfaces of the two gaps; please refer to the figure 9-3, the towel to remove the photoresist layer of the 9_2 towel. And retaining part of the luminescent crystal structure 202; please refer to Figure 9-4, in which a metal reflective layer 208 is deposited on the second type semiconductor layer 2024; please refer to Figure 9-5, in the figure, steaming

Recording - N-type electric relay 212 is wrapped around the protruding structure 206, and the bottom surface 2〇42 is connected to the first semiconductor layer 2022, and a p-type electrode 214 is formed by vapor deposition on the metal reflective layer 208_L. In the case of the light-emitting diodes of the above-mentioned light-emitting diodes 218, the solder bumps 218 are disposed on the sub-mount 22G, and the completed light-emitting diodes 6 Pressing 224 on the sub-base 22 ;; please refer to the m diagram 'in the figure' as a cross-sectional view of the structure of the light-emitting diode 216 pressed onto the sub-base 220. The material of the sub-substrate 220 is generally selected from the group consisting of Si, GaAs, Gap, germanium and GaN; the material of the solder bump 218 is generally selected from the group consisting of 'm zinc, silver, nickel, antimony, indium, tin. 'Titanium, wrong copper, copper, and its alloys - group, or may be silver glue, or at least selected from the material group of the material consisting of the spontaneous conductive polymer mouth and the local molecule The material of the metal reflective layer 2〇8 is generally selected from the group consisting of silver, nickel, wrought, indium, tin and alloys thereof; the N-type electrode is selected from T·, Cr/Au , Cf / Pt / Au, Cr / Pd / Au and Cr / Ti / Au = - group; P-type electrode pad 214 is generally selected from Ni / Au, pd / Au, u, TVAu, cr / Au, Sn / Au and Ta/Au form a group.

f SJ 17 1331413 096106124 Amendment to unlined version. Date of application for amendment: 99/5/4 The above description is for illustrative purposes only and not as a limitation. Any equivalent modifications or alterations to the spirit and scope of this creation shall be included in the scope of the appended patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a packaged flip-chip structure of a light-emitting diode of the prior art; FIG. 2 is a block diagram showing a package flip-chip structure of the light-emitting diode of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a cross-sectional view showing a preferred embodiment of a package flip chip structure of a light-emitting diode of the present invention; FIG. 4 is a cross-sectional view showing another embodiment of a package flip chip structure of a light-emitting diode of the present invention; 5 is a flow chart showing a manufacturing method of a flip chip package of the light emitting diode of the present invention; and FIG. 6 is a flow chart showing a manufacturing method of a light emitting diode according to the present invention; 7-1~7-7 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 8 is a cross-sectional view showing a method of fabricating a flip-chip package for a light-emitting diode according to a preferred embodiment of the present invention; FIG. 8 is a flow chart showing a method of manufacturing another light-emitting diode of the present invention; FIG. 9-9 is a cross-sectional view showing the structure of a flip chip package manufacturing method of a light-emitting diode according to another embodiment of the present invention.

LSI 18 1331413 096106124 Amendment to unlined version of application revision period: 99/5/4 [Main component symbol description] 10 0. Remote crystal substrate, 102: First type semiconductor; 104: Active layer; 106: Second type semiconductor 108: N-type electrode pad; 110: P-type electrode pad; 112: bump; 114: sub-base; 116: press-fit; 2 0 0. Insect crystal substrate, 202: luminescent epitaxial structure; 2021: buffer layer 2022: first type semiconductor layer; 2023: active layer; 2024: second type semiconductor layer; 204: photoresist protective layer; 2041: two gaps; 2042: gap bottom surface; 206: protrusion structure; 208: metal reflection layer; 210: transparent conductive layer; 212: N-type electrode pad; 214: P-type electrode pad; 216: light-emitting diode; 218: solder bump; 220: sub-base; 224: press-fit; S51~S54: process step ; S61 ~ S69: process steps; and S81 ~ S88: process steps.

19

Claims (1)

X. Patent application scope: 1. The county flip-chip structure of the light-emitting diode includes at least one light-emitting diode, at least: an epitaxial substrate; a light-emitting crystal structure on the crystal substrate , wherein the transmission structure is sequentially composed of a -_ layer, a --type semiconductor layer, a silk layer, and a second type semiconductor 096106124 Amendment of the unlined version of the application amendment date: 99/5/4 ϋ layer _ into the '__ butterfly high side has the opposite electrical; 、, the protrusion structure, and the luminescent crystal structure is separated by a gap, where a bottom surface of the gap is the first type semiconductor layer. The germanium electrode pad & covers the protruding structure, wherein the first semiconductor layer is connected through the gap; and a germanium electrode pad is located on the second type semiconductor layer; a sub-base; and at least one solder bump disposed on the sub-base; wherein the light-emitting diode is flip-chip connected to the sub-base by the solder bump. 2. The package flip chip structure of the light emitting diode according to claim 1, wherein the light emitting diode comprises at least: a metal reflective layer on the second type semiconductor layer; and a transparent electrode a layer between the metal reflective layer and the p-type electrode. LSI 20 3. For example, the application of the singularity of the illuminating diodes is as follows: 99/5/4 〇 〇 〇 〇 发光 发光 发光 发光 发光 , , , , , , , , , , , , , , , , , , , , , , , , , One group consisting of secrets, secrets, (four), such as 〇 and _. 4. The dragon flip-chip structure of the light-emitting diode according to the application of the patent application, the material of the pot welding bump is selected from the group consisting of chain, gold, m-record, bismuth, indium, tin, copper, and And a combination of the alloys and the alloys thereof. The material of the solder bumps may be a rotating material or may be selected from the group consisting of The conductive polymer and the polymer are doped with a conductive material to form at least one material of the material group, or other alternative materials. ^ The packaged flip chip structure of the light emitting diode according to claim 2, The metal reflective layer ball in the basin is selected from the group consisting of Ming, Jin, Syria, Zinc, Silver, Record, Wrong, Marriage, Tin and its alloys. = The light-emitting diode described in claim 2 The packaged flip-chip structure of the body, wherein "the electrode is composed of a group of ____, oxidized_, n-indium and tin oxide. ^If the application handle is fine, the N-type electrode pad is written in white τ./Α1 〇m ', and p /r: /AU, Cr/Pt/Au, _w and Cr/Ti/ Au constitutes a group of people. 1331413 _06]24 Amendment of unlined version of application for amendment date: 99/5/4 Q If you are going to Kui U, you are free of charge. 1 Please correct the period: 99/5/4. As stated in the patent claim item 1 a crystal structure of a light-emitting diode, wherein the p-type electrode pad is selected from the group consisting of Ni/Au, Pd/Au, pt/Au, Ti/Au, Cr/Au, Sn/Au, and Ta/Au . The method for manufacturing a flip-chip package of a light-emitting diode, comprising at least forming at least one light-emitting diode, comprising at least: providing a remote crystal substrate; Forming a green-green crystal structure, which is located on a county crystal substrate, and the light-emitting insect crystal structure is composed of a buffer layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and the first-type semiconductor The layer and the second material conductor layer are reduced to form a photoresist protective layer and have two gaps; the second type semiconductor layer located in the light emitting epitaxial structure Making a canine structure, the light ray is formed into the gap, wherein the bottom surface of the gap is the first type semiconductor layer; the photoresist protective layer is removed; and the N-type electrode 塾' is coated on the protruding structure, first a semiconductor layer connection; and wherein a sub-substrate is provided through the gap and the P-type electrode pad; and is disposed on the second semiconductor layer and is disposed on the sub-mount; and iSJ 22 1331413 , 106124 Amendment of unlined version of the field - fee B. Application time limit: 99/5/4 The use of the solder bump to connect the light emitting diode to the submount. 11. The method for manufacturing a flip-chip package of a light-emitting diode according to the above-mentioned item, wherein the process of the light-emitting diode comprises at least: forming a metal reflective layer at the first On the two-type semiconductor layer; and the formation-transparent electrode layer 'is located on the metal reflective layer? Type between electrode art. 12. The method of manufacturing a flip chip package for a light-emitting diode according to the invention of claim 1 wherein the photoresist protection layer is formed to form the gap which is predetermined. 13. The method of manufacturing a flip chip package for a light-emitting diode according to claim 12, wherein the gap is defined by a side of the gap, and the bottom surface of the gap is the first type semiconductor layer The exposed part. 14. The method of fabricating a flip chip package for a light-emitting diode according to the invention of claim 1 wherein the material of the submount is selected from the group consisting of Si, GaAS, GaP, ZnO, and GaN. 15. The method for manufacturing a flip chip package of a light-emitting diode according to the above-mentioned patent, wherein the material of the solder bump is selected from the group consisting of: Ming, Jin, Xu, Ci, Silver, Cone, Wrong, Indium. , m copper, # and its alloys - the scales. "6", such as the method of making a flip-chip package of a light-emitting diode according to the invention of the group 1 (), the wiper of the solder bump, or a material selected from the group consisting of spontaneous polymers And the secrets of the shackles of the scorpion group thief group ^ or other alternative materials. Licai, 23 corrected unlined version 17 · as applied for _ the 11th full description of the light bipolar method 'which metal reflection The material of the layer is selected from the group consisting of Ming, Jin, Turn, Word, Silver, Nickel, Bismuth, Indium, Tin and their alloys. 18_Lensium as described in the scope of claim In the method for forming a flip chip package, the material of the transparent electrode layer is selected from the group consisting of indium tin oxide, zinc oxide, antimony oxide and antimony oxide. 19. The method for producing a flip-chip of a light-emitting diode according to claim 1G, wherein the N-type electrode is selected from the group consisting of Ti/A1, Cr/Au, Cr/Pd/Au, and Cr/. Ti/Au constitutes a group of people. 20. The method of manufacturing a chemi-type LED of the light-emitting diode according to the invention of claim 4, wherein the 电极-type electrode pad is selected from the group consisting of Ni/Au, pd/Au, pt/Au, Ti/ A group consisting of Au, Cr/Au, Sn/Au, and Ta/Au. f SI 24