CN102522467A - Preparation method of submicron-grade graph on sapphire substrate - Google Patents
Preparation method of submicron-grade graph on sapphire substrate Download PDFInfo
- Publication number
- CN102522467A CN102522467A CN2012100003299A CN201210000329A CN102522467A CN 102522467 A CN102522467 A CN 102522467A CN 2012100003299 A CN2012100003299 A CN 2012100003299A CN 201210000329 A CN201210000329 A CN 201210000329A CN 102522467 A CN102522467 A CN 102522467A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- layer
- substrate
- preparation
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a preparation method of a submicron-grade graph on a sapphire substrate, which belongs to the technical field of semiconductors and comprises the following steps of: firstly depositing a photoresist-adhering layer on the sapphire substrate, then carrying out the ultrasonic processing of the sapphire substrate in acetone through photoetching and vapor deposition, and cleanly flushing by adopting deionized water; then placing the sapphire substrate into a hydrochloric-acid aqueous solution for heating to ultrasonically remove a metallic mask layer after being etched by adopting an inductively-coupled plasma dry method, flushing with the deionized water, and then placing the sapphire substrate into dilute hydrofluoric acid or a heated phosphoric-acid solution to remove the photoresist-adhering layer; and finally placing the substrate into the acetone and alcohol for ultrasonic processing, and then cleanly flushing with the deionized water. The preparation method of the submicron-grade graph on the sapphire substrate has the advantages of low manufacturing cost, easiness in operation and high finished-product rate, can be used for the epitaxial growth of low-dislocation-density high-crystal-quality nitrides and can be used for producing the substrate material of a nitride-semiconductor light-emitting diode with higher light-emitting efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of preparation method who utilizes the ultraviolet photolithographic technology on Sapphire Substrate, to prepare the submicron order figure especially.
Background technology
Gallium nitride (GaN), aluminium nitride (AlN), indium nitride III-nitride semiconductor material with wide forbidden band systems such as (InN) and relevant ternary, quaternary alloy; (cover the deep ultraviolet zone of 6.1eV from the region of ultra-red of 0.6eV) and optics, the electrical properties of excellence because its broad band gap always, wide application is arranged in the light-emitting diode (LED) and the laser field of optoelectronic devices such as (LD) of blue, green, ultraviolet (UV) and deep ultraviolet wave band.Because the shortage of homoepitaxy substrate; The backing material of nitride based LED device preparation adopts Sapphire Substrate, SiC substrate or Si substrate mostly; Wherein, Sapphire Substrate is because of its good optical property, excellent chemical stability and ripe production technology, the backing material that moderate price becomes the nitride based LED device of the most frequently used preparation.Yet Sapphire Substrate and nitride epitaxial layer exist very big lattice constant mismatch and thermal expansion coefficient difference, and the threading dislocation density of nitride growth layer that causes extension on it is up to 10
8-10
10Cm
-2, and high threading dislocation density like this certainly will influence the performance of nitride LED device.
Adopt patterned sapphire substrate (Patterned Sapphire Substrates) technology can realize that Sapphire Substrate and nitride growth interlayer are because effective relaxation of the caused stress of mismatch; Reduce the dislocation density in the epitaxial material greatly; Improve the epitaxial loayer crystal mass, thereby improve nitride based LED device performance.In addition; Because the refractive index of nitride-based semiconductor is much larger than air and Sapphire Substrate; Cause the luminous major part of LED device to be limited in the device; And the light scattering effect of graphical sapphire substrate can make and originally is limited in the light that device inside can not outgoing and searches out the angle of emergence, forms emergent light, thereby improves the light extraction efficiency of device.
In sum, for the growth and the preparation of the nitride based LED device of more effectively realizing high-crystal quality, high light-emitting efficiency, development being easy to realize that process controllability is high, repeatability is high, and the graphical sapphire substrate technology that the etching rate of finished products is high is imperative.
Summary of the invention
The purpose of this invention is to provide a kind of, repeatability height high through ultraviolet photolithographic technology realization process controllability,
The preparation method of submicron order figure on the high Sapphire Substrate of etching rate of finished products.
Technical scheme of the present invention may further comprise the steps:
1) deposit layer of silicon dioxide or silicon nitride on the Sapphire Substrate as Sapphire Substrate on the photoresist adhesion layer of fine lithography;
2) adopt the ultraviolet photolithographic method on the Sapphire Substrate that step 1) is processed, to prepare photoresist geometric figure mask layer;
3) utilize vacuum evaporation equipment in step 2) on the Sapphire Substrate processed the vapor deposition multi-layer metal structure as the mask layer of etching Sapphire Substrate; Said multi-layer metal structure is with the alternate A/Ni/B/Ni/C/Ni that forms with other metal of metal Ni by metal ... Structure, wherein other metal A, B, C ... Be respectively metal Ti or Cr or Al or In or Ag or Au;
4) Sapphire Substrate of step 3) being processed immerses in the acetone of boiling, with sonicated 3min ~ 15min, carries out photoresist stripping process, then rinses well with deionized water;
5) adopt inductively coupled plasma (ICP) dry etching method etch step 4) Sapphire Substrate processed, wherein, with BCl
3, Cl
2The plasma gas that mixing forms with Ar carries out plasma substrate is carried out etching, after the etching, and the cylinder of evenly arranging on the substrate; In the said plasma gas, BCl
3And Cl
2With the volume ratio of the mixing of Ar be 0～0.5 ︰, 0.5～1 ︰ 0～0.5;
6) the graphical sapphire substrate of step 5) being processed is put into aqueous hydrochloric acid solution and is heated sonicated, removes the metal mask layer, then rinses well with deionized water;
7) the sapphire graphical substrate of step 6 being processed is put into the hydrofluoric acid of dilution, perhaps removes the photoresist adhesion layer in the phosphoric acid solution of heating; Then with substrate put into acetone, alcohol carries out sonicated, rinse well with deionized water again.
Through above step, can accomplish the preparation of figure on the Sapphire Substrate.The graph substrate for preparing the comparable size magnitude with advanced optical carving technologies such as adopting electron beam lithography is compared, and the present invention uses traditional contact photoetching machine to greatly reduce cost of manufacture, and this manufacture method technology is easy, and is easy to operate, and the etching rate of finished products is high.In addition; Graphical sapphire substrate disclosed by the invention can be used for the epitaxial growth of low-dislocation-density, high-crystal quality nitride; Can be used as to produce and have the more nitride semiconductor LED of high light-emitting efficiency (Light Emitting Diode; LED) backing material, so the present invention is a kind of preparation method with submicron order graphical sapphire substrate of very big economic worth and use value, market prospects are wide.
The Sapphire Substrate that can carry out the present invention processing is any one in the Sapphire Substrate of (0001) or c face, (1-102) or r face, (10-10) or m face, (11-20) or a face or other crystal faces.
Material as the photoresist adhesion layer of fine lithography on the Sapphire Substrate is silicon dioxide or silicon nitride, and thickness is 5nm～300nm.Because the contained high molecular polymer of most photoresists is hydrophobic, and the hydroxyl of oxide surface is hydrophilic, so photoresist and Sapphire Substrate (Al
3O
2) the surface both adhesiveness is bad; Especially when the photoetching process of on Sapphire Substrate, carrying out less than the fine pattern of 5 μ m, can occur because of with photoresist with Sapphire Substrate adhesiveness deficiency but may occur " apparent excessively " phenomenon in the photoetching development technology and cause the problem that photoresist comes off from Sapphire Substrate in the processing step operation.In addition, the commercial now photoresist and the corresponding with it tackifier overwhelming majority are applicable to Si base substrate.Therefore; Among the present invention before carrying out photoetching process; Silicon dioxide that preparation one deck 5nm～300nm is thick on Sapphire Substrate or silicon nitride film solve the caducous problem of photoresist that on Sapphire Substrate, occurs in the fine pattern photoetching process to improve the adhesiveness of photoresist and Sapphire Substrate.
Wherein said litho pattern is a geometric figure; Comprise polygons such as circle and regular hexagon, square, triangle; Wherein round diameter is 1 μ m～4 μ m, interval 0.5 μ m～2.5 μ m, and polygonal side length is 1 μ m～4 μ m, interval 0.5 μ m～2.5 μ m.
Wherein adopt traditional contact photolithography technology, at first the photoresist of spin coating 0.5um～2.0um on substrate is selected vacuum contact exposure pattern then, at ultraviolet ray 20～40mw/cm
2Under the 1～20sec that makes public, through the development of 40～130sec, obtain the photoetching geometric figure of concrete technological requirement after the baking.
Wherein make deposited by electron beam evaporation or vacuum sputtering method vapor deposition multi-layer metal structure A/Ni/B/Ni/C/Ni ... As the mask layer of dry etching Sapphire Substrate, wherein A, B, C ... All represent in the metal materials such as metal Ti or Cr or Al or In or Ag or Au any one.Wherein the number of plies of metallic multilayer structure is 1～10 layer, and A or B or C or ... The thickness of layer is 5nm～50nm, and the thickness of every layer of metal Ni layer is 5nm～300nm.In the multiple layer metal mask structure disclosed by the invention; Because Sapphire Substrate is selected than can be as high as 7:1 with the dry etching of metal Ni; And metal Ni has, and raw material are cheap, evaporation coating method simple, the advantage of process stabilizing, so select the major metal layer of metal Ni as anti-etching mask.Simultaneously; Because metal Ni hardness is big, membrane stress is big and with the Sapphire Substrate poor adhesion; Occur crimping when peeling off easily and come off, so at first vapor deposition one deck and Sapphire Substrate have better adhering metal Ti or Cr or Al or In or Ag or Au etc. as adhesion layer among the present invention.In addition; When the actual requirement of technology is degree of depth dry etching Sapphire Substrate; The thickness of the Ni mask that then requires is bigger, and the cavity temperature of vacuum evaporation equipment raises to some extent in the preparation of Ni mask, and these all cause existing in the Ni mask bigger stress; And then make that in peeling off the crimping of Ni mask comes off.Therefore; Thick Ni layer with the actual requirement of technology among the present invention is split as several thin Ni layers; And in the middle of every layer, insert little thin metal Ti or Cr layer or Al or In or Ag or the Au layer of stress, solve big, the caducous problem of metallic film stress when the requirement of Ni mask is thicker thus.
Wherein use ICP (Inductively Coupled Plasma) dry etching equipment etching Sapphire Substrate, wherein select the BCl3/Cl2/Ar plasma gas that substrate is carried out etching.
Wherein after the ICP etching; The diameter of evenly arranging on the substrate is that 1 μ m～4 μ m, height are the cylinder of 0～2.5 μ m, interval 0.5um～2.5 μ m, and the length of side of perhaps evenly arranging is that 1 μ m～4 μ m, height are the regular hexagon cylinder of 0～2.5 μ m, interval 0.5 μ m～2.5 μ m.
The aqueous hydrochloric acid solution volumetric concentration that wherein is used to remove metal mask layer on the substrate is 30%～70%, under 40～80 ℃ to substrate sonicated 5～30min.
Wherein using dilution is to soak substrate 5～30min under 5～20% the hydrofluoric acid solution room temperature, to remove the silicon dioxide adhesion layer; Perhaps use 85～88% phosphoric acid solution to soak substrate 5～30min, also can remove the silicon nitride adhesion layer at 120～250 ℃.
Description of drawings
The SEM profile of the graphical sapphire substrate of Fig. 1 embodiment 1 preparation.
The SEM exterior view of the graphical sapphire substrate of Fig. 2 embodiment 2 preparations.
The SEM profile of the graphical sapphire substrate of Fig. 3 embodiment 2 preparations.
Embodiment
Sapphire Substrate in the various embodiments of the present invention can be in the Sapphire Substrate of (0001) or c face, (1-102) or r face, (10-10) or m face, (11-20) or a face or other crystal faces any one.
Embodiment 1:
Step 1: the silicon dioxide of deposit one deck 10nm on the Sapphire Substrate as Sapphire Substrate on the photoresist adhesion layer of fine lithography.
Step 2: to utilize conventional photoetching technique on the Sapphire Substrate that step 1 is processed, to prepare diameter be 2.5 μ m, be spaced apart the photoresist figure mask layer of 1 μ m, cylindrical hole.
Step 3: utilize vacuum evaporation equipment four layers of metal structure of the composition of vapor deposition 10nm Ti layer, 50nm Ni layer, 10nm Al layer, 100nm Ni layer successively on the Sapphire Substrate that step 2 is processed, as the metal mask of etching Sapphire Substrate.Wherein, the thickness of every layer of Ti layer, Al layer is respectively 10nm, 15 nm, and the thickness of every layer of metal Ni layer is 50nm.
Step 4: the Sapphire Substrate that step 3 is processed immerses sonicated 3min ~ 15min in the acetone that seethes with excitement, and carries out photoresist stripping process, then rinses well with deionized water.
Step 5: the Sapphire Substrate that adopts ICP dry etching technology etch step 4 to process.
Wherein, select by BCl
3, Cl
2The plasma gas of forming with Ar carries out etching to substrate, and after the etching, the length of side of evenly arranging on the substrate is that 3 μ m, height are the regular hexagon cylinder of 2.5 μ m, interval 2.0 μ m.
In the plasma gas, BCl
3, Cl
2With the volume ratio of Ar be 0.3 ︰, 0.6 ︰ 0.1.
Step 6: it is 50% aqueous hydrochloric acid solution that the sapphire graphical substrate that step 5 is processed is put into percent by volume, under 40～80 ℃, to substrate sonicated 5～30min, removes the metal mask layer, then rinses well with deionized water.
Step 7: it is that 5% hydrofluoric acid aqueous solution soaks 3min that the sapphire graphical substrate that step 6 is processed is put into percent by volume, to remove the silicon dioxide layer as adhesion layer.
Then with substrate put into acetone, alcohol carries out sonicated, uses a large amount of deionized water rinsings clean again, accomplishes the preparation of submicron order figure on the Sapphire Substrate.
Be illustrated in figure 1 as the SEM profile of the graphical sapphire substrate of present embodiment preparation.
Embodiment 2:
Step 1: the silicon dioxide of deposit one deck 200nm on the Sapphire Substrate as Sapphire Substrate on the photoresist adhesion layer of fine lithography.
Step 2: utilize conventional photoetching technique on the Sapphire Substrate that step 1 is processed, prepare diameter for 3um, be spaced apart the cylindrical hole photoresist figure mask layer of 1um.
Step 3: utilize vacuum evaporation equipment four layers of metal structure of vapor deposition 10nm Al layer, 100nm Ni layer, 10nm Au layer, 100nm Ni layer successively on the Sapphire Substrate that step 2 is processed, as the metal mask of etching Sapphire Substrate,
Wherein, the thickness of Au layer, Al layer is respectively 20nm, 35 nm, and the thickness of every layer of metal Ni layer is 5nm.
Step 4: the Sapphire Substrate that step 3 is processed immerses ultrasonic 3min ~ 15min in the acetone that seethes with excitement, and carries out photoresist stripping process, then rinses well with deionized water.
Step 5: the Sapphire Substrate that adopts ICP dry etching technology etch step 4 to process.Wherein, select by BCl
3And Cl
2The plasma gas of forming with Ar carries out etching to substrate, in the plasma gas, and BCl
3And Cl
2With the volume ratio of Ar be 0.1 ︰, 0.8 ︰ 0.1.After the etching, the diameter of evenly arranging on the substrate be 3um, high for 1.3um, be spaced apart the cylinder of 0.85um.
Step 6: it is 50% aqueous hydrochloric acid solution that the sapphire graphical substrate that step 5 is processed is put into percent by volume, under 40～80 ℃, to substrate sonicated 5～30min, removes the metal mask layer, then rinses well with deionized water.
Step 7: it is that 5% hydrofluoric acid aqueous solution soaks 3min that the sapphire graphical substrate that step 6 is processed is put into percent by volume, to remove the silicon dioxide layer as adhesion layer.Then with substrate put into acetone, alcohol carries out sonicated, uses a large amount of deionized water rinsings clean again, accomplishes the preparation of graphical sapphire substrate.
Like Fig. 2, SEM exterior view and the profile that is respectively the patterned sapphire substrate of present embodiment preparation shown in Figure 3.
Claims (10)
1. the preparation method of submicron order figure on the Sapphire Substrate is characterized in that, may further comprise the steps:
1) deposit layer of silicon dioxide or silicon nitride on the Sapphire Substrate as Sapphire Substrate on the photoresist adhesion layer of fine lithography;
2) adopt the ultraviolet photolithographic method on the Sapphire Substrate that step 1) is processed, to prepare photoresist geometric figure mask layer;
3) utilize vacuum evaporation equipment in step 2) on the Sapphire Substrate processed the vapor deposition multi-layer metal structure as the mask layer of etching Sapphire Substrate; Said multi-layer metal structure is with the alternate A/Ni/B/Ni/C/Ni that forms with other metal of metal Ni by metal ... Structure, wherein other metal A, B, C ... Be respectively metal Ti or Cr or Al or In or Ag or Au;
4) Sapphire Substrate of step 3) being processed immerses in the acetone of boiling, with sonicated 3min ~ 15min, carries out photoresist stripping process, then rinses well with deionized water;
5) adopt inductively coupled plasma dry etching method etch step 4) Sapphire Substrate processed, wherein, with BCl
3, Cl
2The plasma gas that mixing forms with Ar carries out plasma substrate is carried out etching, after the etching, and the cylinder of evenly arranging on the substrate; In the said plasma gas, BCl
3And Cl
2With the volume ratio of the mixing of Ar be 0～0.5 ︰, 0.5～1 ︰ 0～0.5;
6) the graphical sapphire substrate of step 5) being processed is put into aqueous hydrochloric acid solution and is heated sonicated, removes the metal mask layer, then rinses well with deionized water;
7) the sapphire graphical substrate of step 6 being processed is put into the hydrofluoric acid of dilution, perhaps removes the photoresist adhesion layer in the phosphoric acid solution of heating; Then with substrate put into acetone, alcohol carries out sonicated, rinse well with deionized water again.
2. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: the Sapphire Substrate of said step 1) is any one in the Sapphire Substrate of (0001) or c face, (1-102) or r face, (10-10) or m face, (11-20) or a face or other crystal faces.
3. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: the thickness of the said photoresist adhesion layer of said step 1) is 5nm～300nm.
4. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1; It is characterized in that: said step 2) diameter of said photoresist geometric figure mask layer or the length of side are 1 μ m～4 μ m, are spaced apart 0.5 μ m～2.5 μ m between the figure.
5. according to the preparation method of submicron order figure on claim 1 or the 4 described a kind of Sapphire Substrate; It is characterized in that: in said step 2) in; The photoresist of spin coating 0.5 μ m～2.0 μ m on substrate at first; Selecting vacuum contact exposure pattern, is the 1～20sec that makes public under the condition of 245nm～410nm in ultraviolet wavelength, after the baking through the development of 40～130sec.
6. according to the preparation method of submicron order figure on claim 1 described a kind of Sapphire Substrate; It is characterized in that: the number of plies of the described multi-layer metal structure of said step 3) is 1～10 layer; Wherein every layer of other metal layer thickness is 5nm～50nm, and the thickness of every layer of metal Ni layer is 5nm～300nm.
7. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: the said cylinder of step 5) is that diameter is that 1 μ m～4 μ m, height are the cylinder of 0～2.5 μ m, interval 0.5 μ m～2.5 μ m.
8. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: the said cylinder of step 5) is that the length of side is that 1 μ m～4 μ m, height are the polygon cylinder of 0～2.5 μ m, interval 0.5 μ m～2.5 μ m.
9. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: the volumetric concentration of the aqueous hydrochloric acid solution of said step 6) is 30%～70%, under 40～80 ℃ to substrate sonicated 5～30min.
10. the preparation method of submicron order figure on a kind of Sapphire Substrate according to claim 1 is characterized in that: it is 5～20% hydrofluoric acid aqueous solution that the described use of said step 7) is diluted to volumetric concentration, at room temperature soaks substrate 5～30min; Perhaps using volumetric concentration is that 85～88% phosphate aqueous solution soaks substrate 5～30min at 120～250 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100003299A CN102522467A (en) | 2012-01-04 | 2012-01-04 | Preparation method of submicron-grade graph on sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100003299A CN102522467A (en) | 2012-01-04 | 2012-01-04 | Preparation method of submicron-grade graph on sapphire substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102522467A true CN102522467A (en) | 2012-06-27 |
Family
ID=46293318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100003299A Pending CN102522467A (en) | 2012-01-04 | 2012-01-04 | Preparation method of submicron-grade graph on sapphire substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102522467A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337574A (en) * | 2013-07-02 | 2013-10-02 | 青岛杰生电气有限公司 | Semiconductive ultraviolet light source device |
| CN107300807A (en) * | 2017-06-01 | 2017-10-27 | 武汉华星光电技术有限公司 | A kind of preparation method of optical element, liquid crystal display module and moth eye micro-structural |
| CN108658035A (en) * | 2018-04-28 | 2018-10-16 | 北京航天控制仪器研究所 | MEMS air flow meter manufacturing method of chip with back cavity structure |
| CN108807148A (en) * | 2018-06-26 | 2018-11-13 | 山东浪潮华光光电子股份有限公司 | A kind of method that physics is combined recovery GaN-LED sapphire pattern substrates with chemistry |
| CN109192846A (en) * | 2018-08-31 | 2019-01-11 | 宁波天炬光电科技有限公司 | Accessory grade low cost surface treatment method and a kind of device |
| CN109321904A (en) * | 2018-09-27 | 2019-02-12 | 肇庆市华师大光电产业研究院 | A kind of metal Nano structure array and its preparation method and application of controllable pattern |
| CN110337606A (en) * | 2017-02-28 | 2019-10-15 | 京瓷株式会社 | Outdoor use image illumination device and the moving body for having it |
| WO2019223631A1 (en) * | 2018-05-24 | 2019-11-28 | 京东方科技集团股份有限公司 | Method for preparing thin film transistor substrate, thin film transistor substrate, and display device |
| CN112951953A (en) * | 2019-12-11 | 2021-06-11 | 深圳市聚飞光电股份有限公司 | LED printing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080070413A1 (en) * | 2006-09-18 | 2008-03-20 | National Central University | Fabrication methods of a patterned sapphire substrate and a light-emitting diode |
| CN101471404A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for improving chip light-emitting efficiency and method for preparing sapphire graphical substrate |
| CN102110592A (en) * | 2010-12-02 | 2011-06-29 | 南京大学扬州光电研究院 | Early-stage production method for machining surface of sapphire substrate for dry etching |
| CN102169288A (en) * | 2010-12-02 | 2011-08-31 | 南京大学扬州光电研究院 | Method of photolithography on sapphire substrate |
-
2012
- 2012-01-04 CN CN2012100003299A patent/CN102522467A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080070413A1 (en) * | 2006-09-18 | 2008-03-20 | National Central University | Fabrication methods of a patterned sapphire substrate and a light-emitting diode |
| CN101471404A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for improving chip light-emitting efficiency and method for preparing sapphire graphical substrate |
| CN102110592A (en) * | 2010-12-02 | 2011-06-29 | 南京大学扬州光电研究院 | Early-stage production method for machining surface of sapphire substrate for dry etching |
| CN102169288A (en) * | 2010-12-02 | 2011-08-31 | 南京大学扬州光电研究院 | Method of photolithography on sapphire substrate |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337574A (en) * | 2013-07-02 | 2013-10-02 | 青岛杰生电气有限公司 | Semiconductive ultraviolet light source device |
| CN103337574B (en) * | 2013-07-02 | 2016-07-06 | 青岛杰生电气有限公司 | A kind of semiconductive ultraviolet light source device |
| CN110337606A (en) * | 2017-02-28 | 2019-10-15 | 京瓷株式会社 | Outdoor use image illumination device and the moving body for having it |
| CN107300807A (en) * | 2017-06-01 | 2017-10-27 | 武汉华星光电技术有限公司 | A kind of preparation method of optical element, liquid crystal display module and moth eye micro-structural |
| CN108658035A (en) * | 2018-04-28 | 2018-10-16 | 北京航天控制仪器研究所 | MEMS air flow meter manufacturing method of chip with back cavity structure |
| WO2019223631A1 (en) * | 2018-05-24 | 2019-11-28 | 京东方科技集团股份有限公司 | Method for preparing thin film transistor substrate, thin film transistor substrate, and display device |
| US11205667B2 (en) | 2018-05-24 | 2021-12-21 | HEFEI BOE OPTOELECTRONICS TECHNOLOGY, Co., Ltd. | Method of preparing thin film transistor substrate |
| CN108807148A (en) * | 2018-06-26 | 2018-11-13 | 山东浪潮华光光电子股份有限公司 | A kind of method that physics is combined recovery GaN-LED sapphire pattern substrates with chemistry |
| CN108807148B (en) * | 2018-06-26 | 2020-05-08 | 山东浪潮华光光电子股份有限公司 | Method for recovering sapphire patterned substrate for GaN-LED by combining physics and chemistry |
| CN109192846A (en) * | 2018-08-31 | 2019-01-11 | 宁波天炬光电科技有限公司 | Accessory grade low cost surface treatment method and a kind of device |
| CN109321904A (en) * | 2018-09-27 | 2019-02-12 | 肇庆市华师大光电产业研究院 | A kind of metal Nano structure array and its preparation method and application of controllable pattern |
| CN112951953A (en) * | 2019-12-11 | 2021-06-11 | 深圳市聚飞光电股份有限公司 | LED printing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102522467A (en) | Preparation method of submicron-grade graph on sapphire substrate | |
| TWI647335B (en) | Method for stripping growth substrate by chemical etching | |
| KR101164136B1 (en) | A method for manufacturing sapphire board | |
| CN104332541B (en) | Patterned substrate preparation method and epitaxial wafer preparation method | |
| CN102201512B (en) | Patterned structure substrate | |
| CN103178179B (en) | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof | |
| CN106848016A (en) | The preparation method of the porous DBR of GaN base | |
| KR20060110521A (en) | Light emitting element and method for manufacturing thereof | |
| CN102867890A (en) | Preparation method of sapphire graphic substrate | |
| CN108172673B (en) | Manufacturing method and structure of distributed Bragg reflector pattern for LED flip chip | |
| CN102184846A (en) | Preparation method of patterned substrate | |
| TW201324614A (en) | Etching method | |
| CN102184842A (en) | Method for patterning sapphire by combining wet etching and dry etching | |
| US9728670B2 (en) | Light-emitting diode and manufacturing method therefor | |
| CN112467005A (en) | Preparation method of multi-composite-layer patterned sapphire substrate | |
| CN104241465A (en) | Nano coarsening composite graphical sapphire substrate and manufacturing method | |
| CN104319324A (en) | Patterned substrate and processing method therefor | |
| JP5435523B1 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN104465900A (en) | Structured arrangement manometer coarsened sapphire substrate and preparation method | |
| CN108389952B (en) | It is a kind of without electric leakage MESA Cutting Road 3D through-hole superstructure LED chip and preparation method thereof | |
| CN104300048B (en) | Manufacturing method for GaN-based light-emitting diode chip | |
| KR101391739B1 (en) | Method for forming surface patterns of sapphire substrate | |
| KR100782129B1 (en) | Method of Silicon Substrate based Light Emitting Diodes using for Wafer Bonding Process | |
| CN108461593B (en) | GaN base light emitting and its processing method with nanometer grade silica grating passivation layer | |
| CN115020565B (en) | Preparation method of composite patterned substrate and epitaxial structure with air gap |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120627 |