CN109698262A - A kind of electrode preparation method of LED chip - Google Patents
A kind of electrode preparation method of LED chip Download PDFInfo
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- CN109698262A CN109698262A CN201711010437.3A CN201711010437A CN109698262A CN 109698262 A CN109698262 A CN 109698262A CN 201711010437 A CN201711010437 A CN 201711010437A CN 109698262 A CN109698262 A CN 109698262A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 96
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 238000003466 welding Methods 0.000 claims abstract description 27
- 239000012790 adhesive layer Substances 0.000 claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims abstract description 20
- 238000005260 corrosion Methods 0.000 claims abstract description 20
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 230000003139 buffering effect Effects 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 14
- 239000003292 glue Substances 0.000 abstract description 5
- 239000010931 gold Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002352 surface water Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- -1 not mercurous Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of electrode preparation method of LED chip includes the following steps: that (1) successively plates adhesive layer, buffer layer and welding layer in epi-layer surface；(2) positive photoresist is applied in welding layer surface, by the electrode pattern for being lithographically derived positive photoresist；(3) to the partial corrosion other than electrode pattern corresponding on welding layer, LED chip is then toasted；(4) buffer layer is corroded, then toasts LED chip；(5) adhesive layer is corroded；(6) positive photoresist is removed, the electrode of LED chip is obtained.This method is by way of again toasting positive-tone photo glue pattern after corroding one layer of metal, next layer of metal layer image is set to be greater than upper one layer of metal layer, both guaranteed electrode structure in this way completely also ensures that adhesive layer is greater than welding layer, avoiding bonding wire is pressure excessive the problem of leading to power down pole, improves the quality of chip.
Description
Technical field
The present invention relates to a kind of electrode preparation methods of LED chip, belong to photoelectron technical field.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
The fifties in last century is that many of representative well-known grind in IBM Thomas J.Watson Research Center
Under the effort for studying carefully mechanism, emerge rapidly by III-V race's semiconductor of representative of GaAs in semiconductor light emitting field.Later with gold
The appearance of organic chemical vapor deposition (MOCVD) technology of category, so that the growth of the III-V race semiconductor of high quality breaches skill
The semiconductor light emitting diode device of art barrier, various wavelength floods the market in succession.Due to semiconductor light-emitting-diode relative to
Current luminescent device has the speciality such as high-efficient, service life long, anti-strength impact, is worldwide counted as photograph of new generation
Funerary objects part.
The electrode preparation of LED chip at this stage is using conventional chemical corrosion or the method preparation of negtive photoresist removing, existing LED chip
Electrode all be layering preparation, using chemical corrosion method preparation once etch, be easy to cause electrode lateral erosion to lead to electrode shape
There is the problems such as turned-down edge in shape, and negtive photoresist removes the thickness to negtive photoresist, associated process conditions require opposite chemical corrosion method to want high, and point
The electrode line that the electrode of layer preparation has been unable to get.
" the preparation side of P electrode on GaAs base light emitting diode chip disclosed in Chinese patent literature CN 105006507A
Method ", it is to coat negative photoresist on GaAs base epitaxial wafer GaP rough surface, then carries out photoetching, retains negativity light on surface
The electrode pattern of photoresist, then be deposited upper layer of Au film on the base epitaxial wafer surface GaAs, then by the metal-stripping other than electrode pattern
Fall, P electrode is obtained on GaAs base light emitting diode chip, the method solves the problems, such as the easy lateral erosion of wet etching, but it makes
With negtive photoresist removing might have negtive photoresist counterdie cause the insecure problem of electrode and remove when chemicals easily electrode surface is caused
Corrosion and damage.
" a kind of LED chip p side electrode and p side electrode preparation method " disclosed in Chinese patent literature CN 103985806B,
The invention p side electrode includes contact electrode and bonding wire electrode, the preparation method of p side electrode be to LED chip p side electrode successively
Moderately increased bonding wire electrode, two layers of electrode structure need Twi-lithography complete to obtain thickness for progress photoetching and wet etching treatment
Need alignment efficiency lower when relatively cumbersome and second of photoetching at, process.
Summary of the invention
For deficiency existing for existing LED chip electrode fabrication, the present invention provides a kind of simple flow, can obtain more
The electrode preparation method of stable LED chip.
The electrode preparation method of LED chip of the invention, includes the following steps:
(1) adhesive layer, buffer layer and welding layer are successively plated in the epi-layer surface of LED chip；
(2) positive photoresist is applied in the welding layer surface of step (1) vapor deposition, by the electrode for being lithographically derived positive photoresist
Figure；
(3) LED chip is immersed in welding layer corrosive liquid, it is rotten to the part other than electrode pattern corresponding on welding layer
Erosion, then toasts LED chip；
(4) LED chip is immersed in buffer layer corrosive liquid, buffer layer is corroded, because of photoresist meeting pair after overbaking
It is protected again on buffer layer, the buffering layer pattern after corrosion will be greater than the welding layer pattern after corrosion, then toast LED core
Piece；
(5) LED chip is immersed in adhesive layer corrosive liquid, adhesive layer is corroded, because of photoresist meeting pair after overbaking
It is protected again on adhesive layer, the bonding layer pattern after corrosion will be greater than the buffering layer pattern after corrosion；
(6) positive photoresist is removed, the electrode of LED chip is obtained.
Because photoresist can play better protective effect to lower-lying metal after overbaking, layer pattern is bonded in electrode structure
> is greater than buffering layer pattern > and welds layer pattern.
Existing chemical attack is prepared in the technology of electrode, is generally adopted when preparing electrode structure LED electrode not of uniform size
With the mode of multiple photoetching and the method preparation of chemical attack, process is cumbersome to have a great impact to production efficiency, and the present invention is logical
It crosses to use and corrodes the mode toasted again to positive-tone photo glue pattern after one layer of metal, the subsequent side for reusing chemical attack
A lower layer metal layer image will be greater than one layer of metal layer when method corrodes next layer of metal layer, both guarantee the complete of electrode structure in this way
It is whole to also ensure that adhesive layer is greater than welding layer, when subsequent progress bonding wire be easier to bonding wire and will not because the problems such as pressure is big caused by electrode
Fall.
Preferred according to the present invention, in the step (1), adhesive layer is Cr or Au or Ge, with a thickness of 0.02-0.06 μm.
It is further preferred that adhesive layer is Au, with a thickness of 0.05-0.08 μm.
It is preferred according to the present invention, in the step (1), buffer layer Ti, with a thickness of 0.08-0.12 μm.
Preferred according to the present invention, in the step (1), welding layer is Au or Al, with a thickness of 1.5-3 μm.It is further excellent
Choosing, welding layer Al, with a thickness of 2.5-3 μm.
It is preferred according to the present invention, in the step (2), positive photoresist with a thickness of 3.8-4.8 μm.
Preferred according to the present invention, baking temperature is 100-120 DEG C in the step (3), and the time is 7-15 minutes.
Preferred according to the present invention, baking temperature is 105-115 DEG C in the step (4), and the time is 3-7 minutes.
The invention has the characteristics that:
1. by the present invention in that with the mode toasted again to positive-tone photo glue pattern after the complete one layer of metal of chemical attack,
The subsequent method for reusing chemical attack when corroding next layer of metal layer a lower layer metal layer image will be greater than one layer of metal layer,
Both guaranteed electrode structure in this way completely also ensures that adhesive layer is greater than welding layer, and avoiding bonding wire, to be that pressure is excessive lead to power down pole
The problem of, improve the quality of chip.
2. electrode structure is divided into three layers in the present invention, it is able to achieve by a photoetching operation, simple flow is suitble to scale
Production.
Detailed description of the invention
Fig. 1 is the cross-sectional view of LED chip made from step in the present invention (1).
Fig. 2 is the cross-sectional view of LED chip made from step in the present invention (2).
Fig. 3 is the cross-sectional view of LED chip made from step in the present invention (3).
Fig. 4 is the cross-sectional view of LED chip made from step in the present invention (4).
Fig. 5 is the cross-sectional view of the electrode of LED chip prepared by the present invention.
In figure: 1.LED chip substrate, 2.LED chip epitaxial layer, 3. adhesive layers, 4. buffer layers, 5. welding layers, 6. positivities
Photoetching offset plate figure, the positive-tone photo glue pattern after 7. bakings.
Specific embodiment
The electrode preparation method of LED chip of the invention, specific steps include:
(1) on the surface of LED chip epitaxial layer 2, (LED chip epitaxial layer 2 is grown on LED chip substrate 1) passes through electronics
Adhesive layer 3, buffer layer 4 and welding layer 5 is successively deposited in the mode of beam vapor deposition, obtains LED chip as shown in Figure 1.
Adhesive layer 3 can choose Cr or Au or Ge, with a thickness of 0.02-0.06 μm.Preferred adhesive layer 3 is Au, with a thickness of
0.05-0.08μm。
The selection Ti film of buffer layer 4,0.08-0.12 μm of thickness
Welding layer 5 selects Au or Al, with a thickness of 1.5-3 μm.Preferred weld layer 5 is Al, with a thickness of 2.5-3 μm.
(2) the positivity light with a thickness of 3.8-4.8 μm is applied in the LED chip surface (surface of welding layer 5) of step (1) preparation
Photoresist obtains the electrode pattern 6 of the positive photoresist by photoetching.Obtain LED chip as shown in Figure 2.
(3) LED chip prepared by step (2) is immersed in conventional Au or Al corrosive liquid on the welding layer 5 of Au or Al
Part other than counter electrode figure 6 is corroded, and is dried up LED chip surface water mark after corrosion, then LED chip is put into temperature
Degree is to toast 7-15 minutes in 100 DEG C of -120 DEG C of baking ovens.As shown in Figure 3.
(4) LED chip prepared by step (3) is immersed in conventional Ti corrosive liquid and Ti buffer layer 4 is corroded, it will after corrosion
The drying of LED chip surface water mark, because photoresist will can be protected again after overbaking on buffer layer 4, the buffer layer after corrosion
Figure will be greater than the welding layer pattern after corrosion.It is 3-7 points of baking in 105 DEG C of -115 DEG C of baking ovens that LED chip, which is put into temperature, again
Clock, as shown in Figure 4.
(5) LED chip prepared by step (4) is immersed in conventional Cr or Au or Ge corrosive liquid and Cr or Au or Ge is glued
Layer 3 is tied to corrode.Because photoresist can be to protecting after overbaking again on adhesive layer 3, the bonding layer pattern after corrosion be will be greater than
Buffering layer pattern after corrosion.
(6) positive photoresist 7 is removed.Finally obtain the electrode of LED chip as shown in Figure 5.
In the present embodiment, by using the side toasted again to positive-tone photo glue pattern after the complete one layer of metal of chemical attack
Formula, the subsequent method for reusing chemical attack when corroding next layer of metal layer a lower layer metal layer image will be greater than one layer of metal
Layer, both guaranteed electrode structure in this way completely also ensures that adhesive layer 3 is greater than welding layer 5, and avoiding bonding wire, to be that pressure is excessive cause
The problem of power down pole, improves the quality of chip.
In the present embodiment, electrode structure is divided into three layers, is able to achieve by a photoetching operation, simple flow is suitble to scale
Production.
Claims (9)
1. a kind of electrode preparation method of LED chip, characterized in that include the following steps:
(1) adhesive layer, buffer layer and welding layer are successively plated in the epi-layer surface of LED chip；
(2) positive photoresist is applied in the welding layer surface of step (1) vapor deposition, by the electrode figure for being lithographically derived positive photoresist
Shape；
(3) LED chip is immersed in welding layer corrosive liquid, to the partial corrosion other than electrode pattern corresponding on welding layer,
Then LED chip is toasted；
(4) LED chip is immersed in buffer layer corrosive liquid, buffer layer is corroded, because photoresist can be to buffering after overbaking
It is protected again on layer, the buffering layer pattern after corrosion will be greater than the welding layer pattern after corrosion, then toast LED chip；
(5) LED chip is immersed in adhesive layer corrosive liquid, adhesive layer is corroded, because photoresist can be to bonding after overbaking
It is protected again on layer, the bonding layer pattern after corrosion will be greater than the buffering layer pattern after corrosion；
(6) positive photoresist is removed, the electrode of LED chip is obtained.
2. the electrode preparation method of LED chip according to claim 1, characterized in that adhesive layer is in the step (1)
Cr or Au or Ge, with a thickness of 0.02-0.06 μm.
3. the electrode preparation method of LED chip according to claim 1, characterized in that adhesive layer is in the step (1)
Au, with a thickness of 0.05-0.08 μm.
4. the electrode preparation method of LED chip according to claim 1, characterized in that buffer layer is in the step (1)
Ti, with a thickness of 0.08-0.12 μm.
5. the electrode preparation method of LED chip according to claim 1, characterized in that welding layer is in the step (1)
Au or Al, with a thickness of 1.5-3 μm.
6. the electrode preparation method of LED chip according to claim 1, characterized in that welding layer is in the step (1)
Al, with a thickness of 2.5-3 μm.
7. the electrode preparation method of LED chip according to claim 1, characterized in that in the step (2), positivity light
Photoresist with a thickness of 3.8-4.8 μm.
8. the electrode preparation method of LED chip according to claim 1, characterized in that baking temperature in the step (3)
It is 100-120 DEG C, the time is 7-15 minutes.
9. the electrode preparation method of LED chip according to claim 1, characterized in that baking temperature in the step (4)
It is 105-115 DEG C, the time is 3-7 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711010437.3A CN109698262A (en) | 2017-10-24 | 2017-10-24 | A kind of electrode preparation method of LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711010437.3A CN109698262A (en) | 2017-10-24 | 2017-10-24 | A kind of electrode preparation method of LED chip |
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| CN109698262A true CN109698262A (en) | 2019-04-30 |
Family
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| CN201711010437.3A Pending CN109698262A (en) | 2017-10-24 | 2017-10-24 | A kind of electrode preparation method of LED chip |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112909155A (en) * | 2021-01-20 | 2021-06-04 | 中国科学院工程热物理研究所 | Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process |
| WO2023240576A1 (en) * | 2022-06-17 | 2023-12-21 | 厦门市芯颖显示科技有限公司 | Miniature electronic component, binding backplane, and binding assembly |
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