CN113054068B - Method for taking out die after coarsening gallium arsenide-based light-emitting diode - Google Patents
Method for taking out die after coarsening gallium arsenide-based light-emitting diode Download PDFInfo
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Abstract
The invention discloses a method for taking a tube core after coarsening a gallium arsenide-based light-emitting diode, which comprises the steps of tube core manufacturing, tube core coarsening, tube core processing, tube core taking, coarsening of a manufactured tube core, processing of coarsened residues, and finally smooth completion of die inversion after the tube core is taken, is scientific, reasonable, safe and convenient to use, fully mixes photoresist and coarsened products, can dissolve most of the photoresist by mutual dissolution of absolute ethyl alcohol and the photoresist, directly brushes and washes the photoresist and the residues together by using tools such as a brush and the like by using a physical brush, has no damage to a blue film by the absolute ethyl alcohol, has excellent removal effect on the coarsened products, can achieve the best dissolution effect by using the photoresist with moderate thickness of 2-4 mu m, is easy to take after the tube core coarsening, reduces the film remaining rate of the tube core, the method is simple, easy to operate and suitable for large-scale operation.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for taking a tube core after coarsening a gallium arsenide-based light-emitting diode.
Background
Gallium arsenide is a typical direct transition type energy band structure material, the conduction band minimum value and the valence band maximum value are both in the center of the brillouin zone, so that the gallium arsenide material has higher electro-optic conversion efficiency and is an excellent material for preparing photoelectric devices, compared with the traditional silicon semiconductor material, the gallium arsenide material has the advantages of high electron mobility, large forbidden band width, direct band gap, low power consumption and the like, the electron mobility is about 5.7 times of that of the silicon material, and the manufactured high-frequency, high-speed and radiation-proof high-temperature device is applied to multiple fields, such as wireless communication, optical fiber communication, mobile communication, GPS global navigation and the like, is particularly widely applied to LEDs and solar cells, and gallium arsenide-based red light emitting diodes develop rapidly in recent years and are widely used in the fields of display screens, indicator lamps, signal display, automobiles, mobile phones, backlight sources and the like.
One of the most important parameters in the fabrication of gallium arsenide-based red light emitting diodes is the light emitting brightness, and in order to obtain higher-power brightness, various methods are found in the front-end process of the LED to improve the brightness, in the conventional method, one of the ways to improve the light emitting brightness is to increase the light extraction efficiency, and the method generally includes the steps of cutting a chip into a truncated inverted pyramid shape, so as to change the included angle between the light emitted to the side wall and the side wall method, and reduce the total reflection of the interface, so as to improve the light emitting efficiency.
At present, the surface roughness is commonly changed by means of surface roughening, so as to change the light-emitting angle to reduce the difficulty that total reflection is easily caused due to a large difference of refractive indexes, in terms of the current surface roughening means, grooves are all manufactured on the surface of a wafer at the wafer stage, etching liquid or dry etching is used for roughening the exposed area (including the upper surface of the bare wafer and the partial side wall of the manufactured tube core), the roughening brightness is generally not greatly improved due to the limitation of the roughening liquid and the size of the grooves, the back surface or the back surface of the cut tube core is roughened by using the roughening liquid, a layer of residue is generated on the side wall of the tube core and the back surface of the tube core due to the reaction of the roughening liquid and the substrate material of the side wall and the back surface of the tube core in the roughening process, the residues are generally difficult to remove, especially when the side wall and the back surface of the tube core are roughened by the roughening liquid, the adhesive film is generally used to tightly bond the front surface of the tube core with the tube core to fix the tube core and protect the front surface of the tube core from being corroded by the roughening liquid, the front surface of the tube core is polluted by contacting with the adhesive film for a long time, so the tube core needs to be rewound in a short time to contact the back surface of the tube core with the adhesive film, and because a layer of roughened residues exists on the back surface of the tube core after roughening, and the residues are loose, the residues are often adhered firstly by directly adhering with the adhesive film, and the tube core is difficult to fall or partially fall, so a large amount of tube core is lost.
Chinese patent document CN104078535A (201310108349.2) proposes a method for roughening sidewalls of an AlGaInP-based LED with reversed polarity, which includes the following steps: (1) exposing and developing a mesa graphical epitaxial wafer of the reversed polarity AlGaInP-based LED by utilizing the conventional photoetching process, and forming a periodic edge graph on the periphery of the mesa graphical epitaxial wafer; (2) corroding the mesa graphic epitaxial wafer developed in the step (1) by using the deionized water containing saturated Br 2; (3) and (3) cleaning and removing the photoresist of the etched mesa patterned epitaxial wafer in the step (2) according to a conventional process to form a roughened side wall corresponding to the shape of the periodic edge pattern.
Chinese patent document CN101656284(200910018771.2) proposes a method for coarsening a red light-emitting diode by using an ITO particle mask, which comprises the following steps of (1) epitaxially growing an N-type contact layer, a multi-quantum well active region and a P-type contact layer on a substrate in sequence by using a conventional metal organic chemical vapor deposition method, wherein the substrate is made of GaAs material; (2) sputtering an ITO film with the thickness of 260nm on the P-type contact layer which grows in an epitaxial mode by using electron beams; (3) immersing the epitaxial wafer covered with the ITO into concentrated hydrochloric acid for 1 minute, and corroding part of the ITO to leave granular ITO; (4) using the residual ITO particles as a mask, and etching the P-type contact layer by a dry method to form a roughened surface; (5) and etching off residual ITO by using concentrated hydrochloric acid.
Chinese patent document CN105185883A (201510653644.5) proposes a sidewall-roughened AlGaInP-based LED and a method for manufacturing the same, comprising the steps of: bonding the epitaxial wafer to the permanent substrate through the metal bonding layer on the epitaxial wafer and the metal bonding layer on the permanent substrate to form a bonded semi-finished product; removing the temporary substrate, the buffer layer and the cut-off layer on the bonded semi-finished product to expose the ohmic contact layer; etching the graphical ohmic contact layer, manufacturing an n-type extension electrode, and manufacturing a main electrode and a back electrode; etching cutting channels at least reaching the P-GaP window layer on the periphery of the epitaxial layer of each LED chip, and roughening the surface and the side wall of the epitaxial layer to enable the surface and the side wall of the epitaxial layer to be roughened.
Chinese patent document CN105914274A (201610418650.7) proposes a sidewall-roughened high-brightness light emitting diode and a method for manufacturing the same, which includes a gallium arsenide permanent substrate, on which a buffer layer, a light emitting layer, a window layer and a first electrode are sequentially disposed, the buffer layer being N-type gallium arsenide, the light emitting layer including an AlAs/AlGaAs reflective layer, an N-AlGaInP lower limiting layer, an AlGaInP active layer, a P-AlGaInP upper limiting layer, a P-GaInP buffer layer and a P-GaP roughened layer, the window layer being an SiN optical thin film, and a second electrode disposed below the gallium arsenide permanent substrate, characterized in that: the P-GaP coarsening layer comprises two parts of a P-GaP front coarsening layer and a P-GaP side wall coarsening layer, a first electrode is arranged on the P-GaP front coarsening layer, and the P-GaP side wall coarsening layer is in a V-shaped groove structure.
In view of the above, a method for taking out the die after roughening the gaas-based led is needed to solve the above problems.
Disclosure of Invention
The invention aims to provide a method for taking a tube core of a gallium arsenide-based light-emitting diode after coarsening, which aims to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for taking a tube core after coarsening a gallium arsenide-based light-emitting diode comprises the following steps:
1) die fabrication, comprising the steps of:
a) and (3) dividing the tube core: dividing the fabricated wafer into individual dies;
b) sticking the P surface of the tube core divided in the step a) on an adhesive film, wherein the N surface of the tube core faces upwards;
2) roughening the tube core, comprising the following steps:
a) heating the tube core prepared in the step b) in the step 1);
b) vertically placing the heated tube core in the step a) into a constant-temperature roughening solution for roughening, wherein the roughening solution is a mixture of iodine, acetic acid, nitric acid and phosphoric acid, and the mass ratio of the iodine, the acetic acid, the nitric acid and the phosphoric acid is 1: 100: 20: 30, of a nitrogen-containing gas;
c) washing the tube core roughened in the step b) with water to remove the roughening solution;
d) drying the tube core washed in the step c);
3) die processing, comprising the steps of:
a) covering a layer of photoresist on the N surface of the tube core dried in the step 2), and fully mixing the photoresist and the coarsening product;
b) baking the tube core covered with the photoresist in the step a), wherein the photoresist and the coarsening product can be more fully mixed by baking;
c) taking the tube core baked in the step b), dipping absolute ethyl alcohol by a brush to brush the photoresist on the N surface, and brushing the coarsening generated residues fully mixed with the photoresist, wherein most of the photoresist can be dissolved by mutual dissolution of the absolute ethyl alcohol and the photoresist;
d) flushing the tube core which is brushed off the photoresist in the step c) to remove the residual absolute ethyl alcohol;
e) d, drying the tube core washed away by the absolute ethyl alcohol in the step d;
4) taking a tube core, taking the tube core roughened in the step 3), adhering the N surface of the tube core by using the blue film again, taking the tube core on the blue film, enabling the N surface of the tube core to be in contact with the blue film at the moment, and enabling the P surface of the tube core to be upward, thereby finishing film inversion.
The wafer structure comprises an N-face electrode layer, a GaAs substrate, an N-type GaAs ohmic contact layer, an N-type limiting layer, an MQW quantum well active layer, a P-type limiting layer, a P-type GaAs ohmic contact layer, a current expansion layer and a P-face electrode layer from bottom to top, wherein the N-face electrode is made of any one of Au, Ni, Ge, Pt and AuBe.
In the step 2), the step a) is carried out by heating a flat plate at 50-90 ℃ for 3-10 min.
The thickness of the photoresist is 2-4 mu m, the selection of the thickness of the photoresist is extremely important, when the photoresist is too thick, the photoresist is not easy to be completely removed, the photoresist is too thin and is not completely mixed with a product, when the product is scrubbed, a part of the product is left, and the thickness of the photoresist is just proper, wherein the thickness of the product is 2-4 mu m.
In the step b) in the step 3), the baking temperature is controlled to be 70-90 ℃, and the baking time is controlled to be 5-10 min.
Compared with the prior art, the invention has the beneficial effects that:
according to the method, the photoresist and the coarsening product are fully mixed, most of the photoresist can be dissolved by mutual dissolution of absolute ethyl alcohol and the photoresist, then the photoresist and the residues are directly brushed and washed away by using tools such as a brush and the like through physical brushing, and the absolute ethyl alcohol does not damage the blue membrane.
The invention adopts the photoresist with moderate thickness, when the photoresist is too thick, the photoresist is not easy to be completely removed, when the photoresist is too thin, the photoresist and the coarsening product are not completely mixed, and when the photoresist is scrubbed, the product has partial residue, but the photoresist with the thickness of 2-4 mu m provided by the invention can achieve the best dissolving effect.
The invention discloses a method for taking a tube core after coarsening a gallium arsenide-based light-emitting diode, which is simple, easy to operate and suitable for large-scale operation, and the tube core is easy to take after coarsening the tube core, so that the film remaining rate of the tube core is reduced.
Drawings
FIG. 1 is a schematic flow chart of a method for taking a die after roughening a GaAs-based light emitting diode according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows: as shown in fig. 1, a method for taking out a die after roughening a gallium arsenide-based light emitting diode comprises the following steps:
1) die fabrication, comprising the steps of:
a) and (3) dividing the tube core: dividing a manufactured wafer into single tube cores, wherein the wafer structure comprises an N-surface electrode layer, a GaAs substrate, an N-type GaAs ohmic contact layer, an N-type limiting layer, an MQW quantum well active layer, a P-type limiting layer, a P-type GaAs ohmic contact layer, a current expansion layer and a P-surface electrode layer from bottom to top, and the N-surface electrode is made of Au;
b) sticking the P surface of the tube core divided in the step a) on an adhesive film, wherein the N surface of the tube core faces upwards;
2) roughening the tube core, comprising the following steps:
a) heating the tube core prepared in the step b) in the step 1) for 3min at 50 ℃ by using a flat plate;
b) vertically placing the tube core heated in the step a) into a constant-temperature coarsening liquid for coarsening;
c) washing the tube core roughened in the step b) with water to remove the roughening solution;
d) drying the tube core washed in the step c);
3) die processing, comprising the steps of:
a) covering a layer of photoresist on the N surface of the tube core after drying in the step 2), and fully mixing the photoresist and the coarsening product, wherein the thickness of the photoresist is 2 mu m;
b) baking the tube core covered with the photoresist in the step a), wherein the photoresist and the coarsening product can be more fully mixed by baking, the baking temperature is controlled at 70 ℃, and the baking time is controlled at 5 min;
c) taking the tube core baked in the step b), dipping absolute ethyl alcohol by a brush to brush the photoresist on the N surface, and brushing the coarsening generated residues fully mixed with the photoresist, wherein most of the photoresist can be dissolved by mutual dissolution of the absolute ethyl alcohol and the photoresist;
d) flushing the tube core which is brushed off the photoresist in the step c) to remove the residual absolute ethyl alcohol;
e) d, drying the tube core washed away by the absolute ethyl alcohol in the step d;
4) taking a tube core, taking the tube core roughened in the step 3), adhering the N surface of the tube core by using a new blue film again, taking the tube core on the new blue film, enabling the N surface of the tube core to be in contact with the new blue film at the moment, enabling the P surface of the tube core to be upward, and finishing film inversion.
Example two: as shown in fig. 1, a method for taking out a die after roughening a gallium arsenide-based light emitting diode comprises the following steps:
1) die fabrication, comprising the steps of:
a) and (3) dividing the tube core: dividing a manufactured wafer into single tube cores, wherein the wafer structure comprises an N-face electrode layer, a GaAs substrate, an N-type GaAs ohmic contact layer, an N-type limiting layer, an MQW quantum well active layer, a P-type limiting layer, a P-type GaAs ohmic contact layer, a current expansion layer and a P-face electrode layer from bottom to top, and the N-face electrode is made of Ni;
b) sticking the P surface of the tube core divided in the step a) on an adhesive film, wherein the N surface of the tube core faces upwards;
2) roughening the tube core, comprising the following steps:
a) heating the tube core prepared in the step b) in the step 1) for 6min at 70 ℃ by using a flat plate;
b) vertically placing the tube core heated in the step a) into a constant-temperature coarsening liquid for coarsening;
c) washing the tube core roughened in the step b) with water to remove the roughening solution;
d) drying the tube core washed in the step c);
3) die processing, comprising the steps of:
a) covering a layer of photoresist on the N surface of the tube core after drying in the step 2), and fully mixing the photoresist and the coarsening product, wherein the thickness of the photoresist is 3 mu m;
b) baking the tube core covered with the photoresist in the step a), wherein the photoresist and the coarsening product can be more fully mixed by baking, the baking temperature is controlled at 80 ℃, and the baking time is controlled at 8 min;
c) taking the tube core baked in the step b), dipping absolute ethyl alcohol by a brush to brush the photoresist on the N surface, and brushing the coarsening generated residues fully mixed with the photoresist, wherein most of the photoresist can be dissolved by mutual dissolution of the absolute ethyl alcohol and the photoresist;
d) flushing the tube core which is brushed off the photoresist in the step c) to remove the residual absolute ethyl alcohol;
e) d, drying the tube core washed away by the absolute ethyl alcohol in the step d;
4) taking a tube core, taking the tube core roughened in the step 3), adhering the N surface of the tube core by using a new blue film again, taking the tube core on the new blue film, enabling the N surface of the tube core to be in contact with the new blue film at the moment, enabling the P surface of the tube core to be upward, and finishing film inversion.
Example three: as shown in fig. 1, a method for taking out a die after roughening a gallium arsenide-based light emitting diode comprises the following steps:
1) die fabrication, comprising the steps of:
a) and (3) dividing the tube core: dividing a manufactured wafer into single tube cores, wherein the wafer structure comprises an N-face electrode layer, a GaAs substrate, an N-type GaAs ohmic contact layer, an N-type limiting layer, an MQW quantum well active layer, a P-type limiting layer, a P-type GaAs ohmic contact layer, a current expansion layer and a P-face electrode layer from bottom to top, and the N-face electrode is made of AuBe;
b) sticking the P surface of the tube core divided in the step a) on a blue film, wherein the N surface of the tube core faces upwards;
2) roughening the tube core, comprising the following steps:
a) heating the tube core prepared in the step b) in the step 1) for 10min at 90 ℃ by using a flat plate;
b) vertically placing the tube core heated in the step a) into a constant-temperature coarsening liquid for coarsening;
c) washing the tube core roughened in the step b) with water to remove the roughening solution;
d) drying the tube core washed in the step c);
3) die processing, comprising the steps of:
a) covering a layer of photoresist on the N surface of the tube core after drying in the step 2), and fully mixing the photoresist and the coarsening product, wherein the thickness of the photoresist is 4 mu m;
b) baking the tube core covered with the photoresist in the step a), wherein the photoresist and the coarsening product can be more fully mixed by baking, the baking temperature is controlled at 90 ℃, and the baking time is controlled at 10 min;
c) taking the tube core baked in the step b), dipping absolute ethyl alcohol by a brush to brush the photoresist on the N surface, and brushing the coarsening generated residues fully mixed with the photoresist, wherein most of the photoresist can be dissolved by mutual dissolution of the absolute ethyl alcohol and the photoresist;
d) flushing the tube core which is brushed off the photoresist in the step c) to remove the residual absolute ethyl alcohol;
e) d, drying the tube core washed away by the absolute ethyl alcohol in the step d;
4) taking a tube core, taking the tube core roughened in the step 3), adhering the N surface of the tube core by using a new blue film again, taking the tube core on the new blue film, enabling the N surface of the tube core to be in contact with the new blue film at the moment, enabling the P surface of the tube core to be upward, and finishing film inversion.
The LED tube core manufactured by the three embodiments has the advantages that the tube core can be completely taken down after coarsening, the film remaining rate of the tube core is 0, the phenomenon that coarsening residues are too much in the prior art is solved, the tube core is easy to take, the film remaining rate of the tube core is reduced, the method is simple, and the operation is easy.
And (4) conclusion: the invention researches how to effectively take down the tube core after the tube core of the gallium arsenide-based LED is cut and the side wall of the tube core or the back of the tube core is coarsened, and discloses an effective and low-cost tube core taking process method.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (7)
1. A method for taking a tube core after coarsening a gallium arsenide-based light-emitting diode is characterized in that: the method comprises the following steps:
1) manufacturing a wafer, cutting to obtain a tube core, and adhering an adhesive film to the P surface of the tube core;
2) taking the tube core processed in the step 1), and carrying out coarsening treatment;
a) taking the tube core treated in the step 1), heating, and placing in a constant-temperature coarsening liquid for coarsening;
b) taking the tube core roughened in the step a), washing the roughening solution, and drying;
3) taking the tube core roughened in the step 2), and removing the roughening residues on the surface of the tube core;
a) coating a layer of photoresist on the N surface of the tube core dried in the step 2), and baking and curing;
b) taking the tube core baked in the step a), dissolving the tube core by absolute ethyl alcohol to remove the photoresist, cleaning and drying;
4) pouring the film and finishing the operation;
a) taking the tube core processed in the step 3), pasting a blue film on the N surface of the tube core, and inverting the film, wherein the P surface of the tube core faces upwards, thereby completing the inversion of the film.
2. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 1, wherein the method comprises the following steps: the wafer comprises an N-face electrode layer, a GaAs substrate, an N-type GaAs ohmic contact layer, an N-type limiting layer, an MQW quantum well active layer, a P-type limiting layer, a P-type GaAs ohmic contact layer, a current expansion layer and a P-face electrode layer from bottom to top.
3. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 2, wherein the method comprises the following steps: the N-face electrode layer is made of any one of Au, Ni, Ge, Pt and AuBe.
4. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 1, wherein the method comprises the following steps: step a) of the step 2), the heating method is flat plate heating, the heating temperature is 50-90 ℃, and the heating time is 3-10 min.
5. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 1, wherein the method comprises the following steps: in the step a) of the step 3), the thickness of the photoresist is 2-4 μm.
6. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 1, wherein the method comprises the following steps: in the step a) of the step 3), the baking temperature is 70-90 ℃, and the baking time is 5-10 min.
7. The method for taking out the die after the gallium arsenide-based light-emitting diode is coarsened according to claim 1, wherein the method comprises the following steps: in the step b) of the step 2), the coarsening liquid is a mixture of iodine, acetic acid, nitric acid and phosphoric acid, wherein the mass ratio of the iodine, the acetic acid, the nitric acid and the phosphoric acid is 1: 100: 20: 30.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911382156.XA CN113054068B (en) | 2019-12-27 | 2019-12-27 | Method for taking out die after coarsening gallium arsenide-based light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911382156.XA CN113054068B (en) | 2019-12-27 | 2019-12-27 | Method for taking out die after coarsening gallium arsenide-based light-emitting diode |
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| US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
| WO2001033613A2 (en) * | 1999-11-02 | 2001-05-10 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| EP1164633A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Method for etching an electrode in a semiconductor device |
| WO2006011299A1 (en) * | 2004-07-29 | 2006-02-02 | Mitsui Mining & Smelting Co., Ltd. | Printed wiring board, process for producing the same and semiconductor device |
| CN101409323A (en) * | 2008-11-25 | 2009-04-15 | 上海大晨光电科技有限公司 | Method for manufacturing LED chip capable of improving light-giving efficiency |
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| US8987181B2 (en) * | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
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| US5849639A (en) * | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
| WO2001033613A2 (en) * | 1999-11-02 | 2001-05-10 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| EP1164633A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Method for etching an electrode in a semiconductor device |
| WO2006011299A1 (en) * | 2004-07-29 | 2006-02-02 | Mitsui Mining & Smelting Co., Ltd. | Printed wiring board, process for producing the same and semiconductor device |
| CN101409323A (en) * | 2008-11-25 | 2009-04-15 | 上海大晨光电科技有限公司 | Method for manufacturing LED chip capable of improving light-giving efficiency |
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