CN104300059A - Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof - Google Patents
Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof Download PDFInfo
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- CN104300059A CN104300059A CN201410538803.2A CN201410538803A CN104300059A CN 104300059 A CN104300059 A CN 104300059A CN 201410538803 A CN201410538803 A CN 201410538803A CN 104300059 A CN104300059 A CN 104300059A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 15
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000003139 buffering effect Effects 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000011179 visual inspection Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
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- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a light-emitting diode with a distributed electric conducting hole structure and a manufacturing method of the light-emitting diode, and belongs to the technical field of photoelectrons. According to the method, a mirror surface reflecting layer is manufactured on an epitaxial wafer, a substrate is bonded on the mirror surface reflecting layer, a base plate, a buffering layer and a cut-off layer on the epitaxial wafer are removed, an N-GaAs ohmic contact layer is exposed, and then a graphical N-GaAs ohmic contact layer, an extension electrode, a main electrode and a back electrode are manufactured. According to the light-emitting diode, the mirror surface reflecting layer is formed by all through holes in a SiO2 electric conducting hole layer and the mirror surface layer, and AuZn in a SiO2 hole and a P-GaP current extension layer form good electricity contact; as no electric conducting holes are formed in a cutting channel and schottky junctions are formed below the electrodes, ineffective injection of currents is reduced, and the light-emitting efficiency is improved.
Description
Technical field
The invention belongs to photoelectron technical field, particularly the manufacturing technology field of AlGaInP quaternary series LED.
Background technology
Quaternary system AlGaInP is a kind of semi-conducting material with direct broad-band gap, has been widely used in the preparation of multiple opto-electronic device.Due to material emission wave band can the ruddiness of covering visible light to yellow green wave band, the visible ray high brightness LED made thus is subject to extensive concern.Quaternary system AlGaInP ruddiness high brightness LED is a large amount of for many aspects such as open air display, traffic lights, auto lamps.Relative to the AlGaInP LED chip of ordinary construction, high brightness AlGaInP chip adopts bonding technology to realize substrate displacement, the silicon substrate (thermal conductivity of silicon is about 1.5W/K.cm) using good in thermal property replaces gallium arsenide substrate (thermal conductivity of GaAs is about 0.8W/K.cm), chip has more low-heat resistance, heat dispersion is better, is conducive to improving reliability.To reduce in the total reflection of chip and encapsulating material interface get optical efficiency, also at some surface texture structures of chip manufacturing to overcome light.In addition, P-GaP plates reflector, higher than growing DBR speculum light extraction efficiency in common ruddiness epitaxial loayer.Reflector is made up of the deielectric-coating of low-refraction and metal level, and deielectric-coating produces conductive hole by photoetching process, and specular layer forms electricity contact by conductive hole with P-GaP.Traditional reflection layer structure is made up of the deielectric-coating of whole uniform pore openings and metal level, due to the equally distributed conductive hole in P face can make P surface current inject after evenly flow to active area, but due to the interception of N face electrode, cause the conductive hole portion of electrical current of base part to inject and become invalid injection, cause light extraction efficiency not high.In addition, the conductive hole of conventional uniform distribution, after carrying out back segment cutting, have the phenomenon on Cutting Road unavoidably, black meeting due to hole is comparatively difficult when causing visual inspection machine to carry out the identification of core grain, also can carry out exception choose except time cause erroneous judgement, reduce product yield.To client when carrying out die bond operation, also can cause the problem identifying difficulty, can customer complaint be brought, even affect product image.
Summary of the invention
The present invention is intended to the conductive via structure of optimizing uniform distribution, proposes the new type reflection Rotating fields with distributed conductive hole, has the high brightness ruddiness AlGaInP light-emitting diode of this new type reflection Rotating fields.
The present invention is disposed with metal bonding layer, specular layer, epitaxial loayer, expansion electrode and main electrode on the substrate with back electrode, and epitaxial loayer is connected on metal bonding layer by specular layer; Epitaxial loayer comprises P-GaP current extending, resilient coating, P-AlGaInP limiting layer, MQW multiple quantum well active layer, N-AlGaInP limiting layer, N-AlGaInP current extending, roughened layer and N-GaAs ohmic contact layer; It is characterized in that specular layer comprises the SiO with some through holes of the P-GaP current extending side being arranged on epitaxial loayer
2conduction aperture layer, institute's through hole is evenly distributed on the luminous zone around main electrode and expansion electrode, in described through hole and SiO
2between conduction aperture layer and metal bonding layer, evaporation has specular layer.
The distributed conductive layer of the present invention is the SiO of theoretical anti-reflection film optimum thickness
2film, by SiO
2each through hole in conduction aperture layer and specular layer together constitute specular layer, SiO
2auZn in hole forms good electricity contact with P-GaP current extending; Due on Cutting Road without conductive hole, square one-tenth schottky junction under the electrodes, thus reduce the invalid injection of electric current, improves luminous efficiency.Also owing to Cutting Road there is no dispensing of conductive hole, thus ensure that after carrying out back segment cutting, do not switch to conductive hole, solve the problem of visual inspection machine identification difficulty, it also avoid the abnormal erroneous judgement of Cutting Road because conductive hole causes, improve product yield.The present invention improves the invalid injection of electric current that equally distributed conductive hole brings affects light extraction efficiency and Cutting Road identification difficult problem, can reduce the invalid injection of electric current, improving luminous efficiency.It also avoid client when carrying out die bond operation, identifying the problem of difficulty, improving the qualification rate of product.
In addition, specular layer of the present invention be in Au, Ag, Al at least any one.Preferably can ensure that the Omni-directional reflector made has high reflectivity with this little material, have direct contribution to high light extraction efficiency.
The thickness of described N-GaAs ohmic contact layer is 30 ~ 50nm, and doping content is 1 × 10
19cm
-3above, the impurity element mixed is Si.This doping content ensures that N-type expansion electrode and its can form good ohmic contact, and this preferred thickness is unlikely to that N-GaAs is too thick causes extinction, reduction light extraction efficiency under guaranteeing to be formed the prerequisite of good electrical contact.
Described N-AlGaInP current expansion layer thickness is 2000nm, can ensure that N surface current extension layer has high electron mobility, ensures the ability that electric current is extending transversely.
Described P-GaP current expansion layer thickness is 1000 ~ 3000nm, and doping content is 1 × 10
18cm
-3above, the impurity element mixed is Mg.Select the advantage of this thickness and doping content: high doping content ensures that P-type electrode contacts with its formation good ohmic, the ability that this preferred thickness guarantee P surface current is extending transversely.
Another object of the present invention is the manufacture method proposing above structure diodes.Step is as follows:
1) epitaxial growth buffer, cutoff layer, N-GaAs ohmic contact layer, roughened layer, N-AlGaInP current extending, N-AlGaInP limiting layer, MQW multiple quantum well active layer, P-AlGaInP limiting layer, resilient coating, P-GaP current extending successively on substrate, to form the epitaxial wafer of complete structure;
2) on epitaxial wafer, specular layer is made; Concrete feature is: make on P-GaP current extending and have the SiO being evenly distributed with some through holes
2conduction aperture layer, and on the luminous zone that each through hole is evenly distributed on around main electrode and expansion electrode; Then in described through hole and SiO
2evaporation specular layer in conduction aperture layer;
3) bonded substrate on specular layer;
4) remove substrate, resilient coating and the cutoff layer on epitaxial wafer, expose N-GaAs ohmic contact layer;
5) patterned N-GaAs ohmic contact layer is made;
6) on patterned N-GaAs ohmic contact layer, expansion electrode is made;
7) on expansion electrode, make main electrode, make main electrode cover expansion electrode completely;
8) back electrode is made at the back side of substrate;
The present invention is in step 2) the middle SiO adopting PECVD deposition to have theoretical anti-reflection film optimum thickness
2film, recycling gold-tinted, etch process is produced has distributed SiO
2conduction aperture layer, produce contact layer and specular layer by electron beam evaporation plating mode, manufacture craft is simple.The comprehensive reflector of producing has high reflectivity, simultaneously SiO
2auZn in hole forms good electricity contact with P-GaP current extending; Due on Cutting Road without conductive hole, square one-tenth schottky junction under the electrodes, thus reduce the invalid injection of electric current, improves luminous efficiency.Also owing to Cutting Road there is no dispensing of conductive hole, thus ensure that when carrying out back segment cutting, not switching to conductive hole, solving the problem of visual inspection machine identification difficulty, it also avoid the abnormal erroneous judgement of Cutting Road because conductive hole causes, improve product yield.
In addition, step 7) expansion electrode peels off mode by negative glue and makes main electrode, main electrode covers expansion electrode completely, ensures the integrality of expansion electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation of the epitaxial wafer in manufacturing process.
Fig. 2 is the structural representation of the substrate in manufacturing process.
Fig. 3 is the structural representation of finished product of the present invention.
Fig. 4 is bowing to schematic diagram of Fig. 3.
Embodiment
One, be the structural representation of preferred embodiments of the present invention in manufacturing process as illustrated in fig. 1 and 2, manufacturing step is as follows:
1, as shown in Figure 1, MOCVD device is utilized to grow transition zone 102, N-GaInP cutoff layer 103, N-GaAs ohmic contact layer 104, N-AlGaInP roughened layer 105, N-AlGaInP current extending 106, N-AlGaInP limiting layer 107, MQW multiple quantum well active layer 108, P-AlGaInP limiting layer 109, resilient coating 110, P-GaP current extending 111 successively on an interim GaAs substrate 101.
Wherein N-GaAs ohmic contact layer 104 preferred thickness 40nm, doping content is 1 × 10
19cm
-3above, the impurity element mixed is Si, to ensure that there is good current expansion ability in N face; P-GaP current extending 111 preferred thickness 2000nm, doping content is 1 × 10
18cm
-3above, the impurity element mixed is Mg, to ensure that there is good current expansion ability in P face.
Utilize 511 cleaning fluid cleaning P-GaP current extendings 111, P-GaP current extending 111 deposits SiO
2deielectric-coating, by spin coating positive photoresist, make mask pattern through overexposure, development, recycling volume ratio is the NH of 1:7
4f:H
2o mixed solution, at SiO
2conduction aperture layer 112 etches the some through holes on the luminous zone be evenly distributed on around main electrode and expansion electrode.
Adopt electron beam evaporation plating mode, in above each through hole and SiO
2conduction aperture layer 112 successively makes the Al layer that thickness is AuZn and 500nm of 300nm, and this AuZn/Al together form specular layer 113.
By SiO
2conduction aperture layer 112 together constitutes specular layer with AuZn/Al specular layer 113, then makes SiO through 440 DEG C of annealing 10min
2in hole, AuZn forms good electricity contact with P-GaP current extending 111.
The specular layer 113 made adopting electron beam evaporation plating mode make thickness is that the Au of 1000nm is as metal bonding layer 114.
2, as shown in Figure 2, Si substrate 201 adopting electron beam evaporation plating mode to make thickness is that the Au of 1000nm is as metal bonding layer 202.
3, the goods that goods step 1 made and step 2 are made immerse in acetone soln, and bonded layer 114 is relative with bonded layer 202, carry out ultrasonic cleaning 10min, under 300 DEG C of conditions, under 5000kg External Force Acting, both are bonded to together through 20min.
4, utilize mechanical lapping mode first to be removed by the GaAs substrate 101 of the semi-products after bonding to residue about 20 μm thick, then be the NH of 1:5 by volume ratio
4oH:H
2o
2solution reaction 10min, chemical corrosion stops on GaInP cutoff layer 103.
5, by the positive glue of spin coating on N-GaAs ohmic contact layer 104, after photoetching development, then the H that volume ratio is 1:2:2 is immersed
3pO
4: H
2o
2: H
2o mixed solution, etches patterned N-GaAs ohmic contact layer 104.
6, volume ratio is adopted to be the H of 1:1:7
3pO
4: H
2sO
4: CH
3cOOH mixed solution wet method makes N-AlGaInP roughened layer 105.
7, on the N-GaAs ohmic contact layer 104 making graphing shape, adopt the mode evaporation thickness of electron beam evaporation plating to be the AuGeNi alloy material of 400nm, then through gluing, photoetching, after the techniques such as development, adopt volume ratio to be the I of 1:2:5
2: KI:H
2o mixed solution etches expansion electrode 204.
As shown in Figure 4, expansion electrode 204 is circular ring type, outer shroud radius 45 μm, inner ring radius 38 μm.Carry out annealing 10min process by 350 DEG C of nitrogen atmosphere annealing furnaces, make expansion electrode 204 form good electricity contact with N-GaAs ohmic contact layer 104.
8, after making expansion electrode 204, semi-products are immersed acetone soln ultrasonic cleaning 10min, then photolithographic procedures is carried out, spin coating negative photoresist, photoetching, develop, be spin-dried for, then carry out plasma and play glue, the Au of 4 μm is plated on N-AlGaInP type roughened layer 105 and expansion electrode 204 by the mode adopting electron beam cold to steam, then forms main electrode 205 after peeling off.
As shown in Figure 4, the figure of main electrode 205 to be radius the be cylinder of 50 μm, expansion electrode 204 is buried in main electrode 205.
9, adopting the mode of electron beam hot evaporation at Si substrate 201 back side evaporation thickness is the Ti of 20nm and thickness is respectively the Au of 100nm, and namely Ti/Au back electrode 203 in Fig. 2 and Fig. 3, namely completes the making of device.
Two, the product structure feature made:
As shown in Figure 3,4, back electrode 203 is disposed with substrate 201, metal bonding layer 202, metal bonding layer 114, specular layer 113, SiO
2conduction aperture layer 112, P-GaP current extending 111, resilient coating 110, P-AlGaInP limiting layer 109, MQW multiple quantum well active layer 108, N-AlGaInP limiting layer 107, N-AlGaInP current extending 106, N-AlGaInP roughened layer 105, N-GaAs ohmic contact layer 104, N-GaAs ohmic contact layer 104 is provided with expansion electrode 204, and expansion electrode 204 is buried in main electrode 205.
Due to SiO
2the conductive hole of conduction aperture layer 112 is evenly distributed on the luminous zone around main electrode 205 and expansion electrode 204, and square P face and N face all define schottky junction under the electrodes, thus reduce the invalid injection of electric current, improve luminous efficiency.Owing to Cutting Road there is no dispensing of conductive hole, thus ensure that after carrying out back segment cutting, do not switch to conductive hole, solve the problem of visual inspection machine identification difficulty, it also avoid the abnormal erroneous judgement of Cutting Road because conductive hole causes, improve product yield.It also avoid client when carrying out die bond operation, identifying the problem of difficulty, improve product image.
Claims (10)
1. have the light-emitting diode of distributed conductive via structure, the substrate with back electrode is disposed with metal bonding layer, specular layer, epitaxial loayer, expansion electrode and main electrode, epitaxial loayer is connected on metal bonding layer by specular layer; Epitaxial loayer comprises P-GaP current extending, resilient coating, P-AlGaInP limiting layer, MQW multiple quantum well active layer, N-AlGaInP limiting layer, N-AlGaInP current extending, roughened layer and N-GaAs ohmic contact layer; It is characterized in that specular layer comprises the SiO with some through holes of the P-GaP current extending side being arranged on epitaxial loayer
2conduction aperture layer, institute's through hole is evenly distributed on the luminous zone around main electrode and expansion electrode, in described through hole and SiO
2between conduction aperture layer and metal bonding layer, evaporation has specular layer.
2. there is the light-emitting diode of distributed conductive via structure according to claim 1, it is characterized in that described specular layer be in Au, Ag, Al at least any one.
3. have the light-emitting diode of distributed conductive via structure according to claim 1, it is characterized in that the thickness of described N-GaAs ohmic contact layer is 30 ~ 50nm, doping content is 1 × 10
19cm
-3above, the impurity element mixed is Si.
4. there is the light-emitting diode of distributed conductive via structure according to claim 1, it is characterized in that described N-AlGaInP current expansion layer thickness is 2000nm.
5. have the light-emitting diode of distributed conductive via structure according to claim 1, it is characterized in that described P-GaP current expansion layer thickness is 1000 ~ 3000nm, doping content is 1 × 10
18cm
-3above, the impurity element mixed is Mg.
6. there is the manufacture method of the light-emitting diode of distributed conductive via structure as claimed in claim 1, comprise the following steps:
1) epitaxial growth buffer, cutoff layer, N-GaAs ohmic contact layer, roughened layer, N-AlGaInP current extending, N-AlGaInP limiting layer, MQW multiple quantum well active layer, P-AlGaInP limiting layer, resilient coating, P-GaP current extending successively on substrate, to form the epitaxial wafer of complete structure;
2) on epitaxial wafer, specular layer is made;
3) bonded substrate on specular layer;
4) remove substrate, resilient coating and the cutoff layer on epitaxial wafer, expose N-GaAs ohmic contact layer;
5) patterned N-GaAs ohmic contact layer is made;
6) on patterned N-GaAs ohmic contact layer, expansion electrode is made;
7) on expansion electrode, make main electrode, make main electrode cover expansion electrode completely;
8) back electrode is made at the back side of substrate;
It is characterized in that: described step 2) in, P-GaP current extending makes there is the SiO being evenly distributed with some through holes
2conduction aperture layer, and on the luminous zone that each through hole is evenly distributed on around main electrode and expansion electrode; Then in described through hole and SiO
2evaporation specular layer in conduction aperture layer.
7. manufacture method according to claim 6, it is characterized in that for the material of evaporation specular layer be in Au, Ag, Al at least any one.
8. manufacture method according to claim 6, is characterized in that, with after cleaning fluid cleaning P-GaP current extending, P-GaP current extending depositing SiO
2media coating, then at SiO
2media coating etches some through holes.
9. manufacture method according to claim 7, is characterized in that adopting electron beam evaporation plating mode, in through hole and SiO
2media coating makes specular layer.
10. manufacture method according to claim 7, it is characterized in that the thickness of described N-GaAs ohmic contact layer is 30 ~ 50nm, doping content is 1 × 10
19cm
-3above, the impurity element mixed is Si; Described N-AlGaInP current expansion layer thickness is 2000nm; Described P-GaP current expansion layer thickness is 1000 ~ 3000nm, and doping content is 1 × 10
18cm
-3above, the impurity element mixed is Mg.
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Application publication date: 20150121 Assignee: Xiamen Changelight Co.,Ltd. Assignor: Xiamen Changelight Co.,Ltd. Contract record no.: X2020320000010 Denomination of invention: Light-emitting diode with distributed electric conducting hole structure and manufacturing method thereof Granted publication date: 20170704 License type: Common License Record date: 20200513 |