CN106299058A - A kind of epitaxial wafer for upside-down mounting infrarede emitting diode - Google Patents
A kind of epitaxial wafer for upside-down mounting infrarede emitting diode Download PDFInfo
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- CN106299058A CN106299058A CN201610752785.7A CN201610752785A CN106299058A CN 106299058 A CN106299058 A CN 106299058A CN 201610752785 A CN201610752785 A CN 201610752785A CN 106299058 A CN106299058 A CN 106299058A
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- emitting diode
- upside
- quantum well
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 44
- 230000003139 buffering effect Effects 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000000407 epitaxy Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 229910007264 Si2H6 Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of epitaxial wafer for upside-down mounting infrarede emitting diode, belong to the epitaxy technology field of light emitting diode, in substrate the same side successively epitaxial layer, active layer includes InGaAs quantum well layer alternately and GaAsP barrier layer in the cycle, described periodicity be 2～6 active layer use InGaAs/GaAsP strain-compensated quantum well structure, use strain-compensated quantum well that the dislocation that flows laterally to of carrier can be suppressed to form non-radiative recombination, thus improve quantum efficiency.
Description
Technical field
The invention belongs to the epitaxy technology field of light emitting diode, a kind of for upside-down mounting infrarede emitting diode
The preparation method of epitaxial wafer.
Background technology
Infrarede emitting diode is that one can send ultrared diode, is applied to security monitoring, Wearable device, red
The fields, particularly field of gas detection such as outside line communication, infrared remote controller, sensor light source and night illumination.Use
InGaAs/GaAsP strain compensation multi-quantum pit structure and InGaAs/GaAs strained quantum well structure, as active layer, can be prepared
Emission wavelength is at the light emitting diode of more than 850nm.
During strain-compensated quantum well Material growth, InGaAs and GaAsP can diffuse into one another in interface,
Hardly result in the preferable SQW of interface quality and quantum barrier layer, therefore make current light emitting diode product brightness effectively to carry
High.
Summary of the invention
The present invention seeks to propose a kind of be effectively improved light-emitting diode luminance for upside-down mounting infrarede emitting diode
Epitaxial wafer.
The present invention has two kinds of technical schemes:
Scheme one: n-GaAs cushion, n-GaInP etch stop layers, n-GaAs contact are set in substrate the same side successively extension
Layer, n-AlxGa1-xAs current extending, n-AlxGa1-xAs lower limit layer, AlxGa1-xAs lower waveguide layer, active layer, AlxGa1- xThe upper ducting layer of As, p-AlxGa1-xAs upper limiting layer, p-AlxGa1-xAs current extending and p-GaAs cover layer, its feature exists
Including InGaAs quantum well layer alternately and GaAsP barrier layer in the cycle in described active layer, described periodicity is 2～6.
The present invention uses InGaAs/GaAsP strain-compensated quantum well structure at active layer, and employing strain-compensated quantum well can
The dislocation that flows laterally to of suppression carrier forms non-radiative recombination, thus improves quantum efficiency.
Between one group of InGaAs quantum well layer and the GaAsP barrier layer of described active layer, GaAs layer or layer of InP are set.
The present invention inserts one layer of thin GaAs or InP between the SQW and base of active layer, can effectively alleviate quantum
Lattice mismatch between trap and base, improves interface quality, reduces stress, grows high-quality quantum-well materials, and then growth
Go out the high-quality epitaxial wafer for upside-down mounting infrarede emitting diode chip, promote the photo electric of infrarede emitting diode device
Can, to reach to improve the purpose of brightness.
Further, the thickness range of described GaAs layer or layer of InP is 1nm～8nm.This thickness can stop compound
The phase counterdiffusion of InGaAs and GaAsP, and effectively alleviate the lattice mismatch between SQW and base, improve interface quality, subtract
Little stress, grows high-quality quantum-well materials.
Scheme two: n-GaAs cushion, n-GaInP etch stop layers, n-GaAs are set in substrate the same side successively extension
Contact layer, n-AlxGa1-xAs current extending, n-AlxGa1-xAs lower limit layer, AlxGa1-xAs lower waveguide layer, active layer,
AlxGa1-xThe upper ducting layer of As, p-AlxGa1-xAs upper limiting layer, p-AlxGa1-xAs current extending and p-GaAs cover layer, its
Being characterised by that described active layer includes InGaAs quantum well layer alternately and GaAs barrier layer in the cycle, described periodicity is 2～6.
The present invention uses InGaAs/GaAs strained quantum well structure at active layer, uses strained quantum well can suppress current-carrying
The dislocation that flows laterally to of son forms non-radiative recombination, thus improves quantum efficiency.
Further, between one group of InGaAs quantum well layer and the GaAs barrier layer of active layer of the present invention, InGaAs is set
Layer.
In constituent content is inserted relatively low (compared with In component in SQW between the SQW and base of active layer
Low) InGaAs layer, this interposed layer make SQW, build interface there is preferably interface flatness, relatively low surface dislocation
Density, and enhance quantum well radiation characteristic.During the growth of InGaAs/GaAs strained quantum well, the growth of high In component and substrate
Mismatch is big, causes crystal mass to reduce, and inserts InGaAs layer between trap and base, can effectively alleviate SQW and base
Between lattice mismatch, improve interface quality, reduce stress, grow high-quality quantum-well materials, and then grow high-quality
The epitaxial wafer for upside-down mounting infrarede emitting diode chip, promote infrarede emitting diode device photoelectric properties, the most also
Can reach the purpose improving brightness.
Further, the thickness range of InGaAs layer of the present invention is 1nm～8nm.Insert between trap and base
InGaAs thin layer, the lattice mismatch between can effectively alleviating SQW and building, improves interface quality, reduces stress, grow
High-quality quantum-well materials.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention.
Fig. 2 is the close-up schematic view of a kind of active layer in present configuration.
Fig. 3 is the close-up schematic view of another kind of active layer in present configuration.
Detailed description of the invention
One, preparation method:
As it is shown in figure 1, use the method for metal organic chemical vapor deposition (MOCVD) n-GaAs substrate up to lower and on successively
The each layer of epitaxial growth.
Epitaxial growth n-GaAs cushion 2, n-GaInP etch stop layers 3, n-from the bottom to top on n-GaAs substrate 1
GaAs contact layer 4, n-AlxGa1-xAs current extending 5, n-AlxGa1-xAs lower limit layer 6, AlxGa1-xAs lower waveguide layer 7,
Active layer 8, AlxGa1-xThe upper ducting layer of As 9, p-AlxGa1-xAs upper limiting layer 10, p-AlxGa1-xAs current extending 11, p-
GaAs cover layer 12.
Wherein: n-GaAs substrate 1 is the N type GaAs material in (100) face.
N-GaInP etch stop layers 3 thickness is 200nm, uses Si2H6As doped source.
n-AlxGa1-xAs current extending 5 thickness between 1000nm to 10000nm, and 0 < x < 0.3, use Si2H6Make
For doped source.
n-AlxGa1-xAs lower limit layer 6 thickness between 300nm to 1000nm, and 0.3 < x < 0.6, use Si2H6As
Doped source.
The thickness of the upper ducting layer of AlxGa1-xAs 9 be less than described AlxGa1-xAs lower waveguide layer thickness, upper ducting layer and
The thickness range of lower waveguide layer is 70nm to 1000nm, and 0 < x < 0.3.
p-AlxGa1-xAs upper limiting layer 10 thickness between 300nm to 1000nm, and 0.3 < x < 0.6, use CBr4As
Doped source.
p-AlxGa1-xAs current extending 11 thickness between 1000nm to 10000nm, and 0 < x < 0.3, use CBr4Make
For doped source.
P-GaAs cover layer 12 thickness 150nm, is divided into two parts, and front 50nm uses CBr4As doped source, rear 100nm
Top layer uses DMZn as doped source.
Except for the difference that:
In scheme one: as in figure 2 it is shown, when making active layer 8, epitaxial growth is cycle InGaAs quantum well layer 8-1 alternately
With GaAsP barrier layer 8-3, periodicity is 2～6.And in the one of which cycle, after growth forms quantum well layer 8-1, grow one
Layer thickness scope is GaAs layer or the layer of InP 8-2 of 1～8nm, then regrowth GaAsP barrier layer 8-3.
In scheme two: as it is shown on figure 3, when making active layer 8, epitaxial growth is cycle InGaAs quantum well layer alternately
8-3 and GaAs barrier layer 8-1, periodicity is 2～6.And in the one of which cycle, after growth forms quantum well layer 8-3, growth
A layer thickness scope is the InGaAs layer of the In constituent content relatively low (relatively low compared with In component in SQW) of 1～8nm
8-2, then regrowth GaAs barrier layer 8-1.
Two, product structure feature:
1, as shown in Figure 1, 2, substrate 1 the same side extension successively arrange n-GaAs cushion 2, n-GaInP etch stop layers 3,
N-GaAs contact layer 4, n-AlxGa1-xAs current extending 5, n-AlxGa1-xAs lower limit layer 6, AlxGa1-xAs lower waveguide layer 7,
Active layer 8, AlxGa1-xThe upper ducting layer of As 9, p-AlxGa1-xAs upper limiting layer 10, p-AlxGa1-xAs current extending 11 and p-
GaAs cover layer 12.
Feature is: active layer 8 is by the InGaAs quantum well layer 8-1 alternately that periodicity is 2～6 and GaAsP barrier layer 8-3 group
Becoming, arranging thickness range between InGaAs quantum well layer 8-1 and GaAsP barrier layer 8-3 that one of which is adjacent is 1～8nm
GaAs layer or layer of InP 8-2.
2, as shown in Figure 1,3, arrange n-GaAs cushion 2 in substrate 1 the same side extension successively, n-GaInP corrodes cut-off
Layer 3, n-GaAs contact layer 4, n-AlxGa1-xAs current extending 5, n-AlxGa1-xAs lower limit layer 6, AlxGa1-xWaveguide under As
Layer 7, active layer 8, AlxGa1-xThe upper ducting layer of As 9, p-AlxGa1-xAs upper limiting layer 10, p-AlxGa1-xAs current extending 11 He
P-GaAs cover layer 12.
Feature is: active layer 8 is by the InGaAs quantum well layer 8-1 alternately that periodicity is 2～6 and GaAs barrier layer 8-3 group
Becoming, arranging thickness range between InGaAs quantum well layer 8-3 and GaAs barrier layer 8-1 that one of which is adjacent is 1～8nm
InGaAs layer 8-2.
Claims (6)
1., for an epitaxial wafer for upside-down mounting infrarede emitting diode, n-GaAs buffering is set in substrate the same side successively extension
Layer, n-GaInP etch stop layers, n-GaAs contact layer, n-AlxGa1-xAs current extending, n-AlxGa1-xAs lower limit layer,
AlxGa1-xAs lower waveguide layer, active layer, AlxGa1-xThe upper ducting layer of As, p-AlxGa1-xAs upper limiting layer, p-AlxGa1-xAs electric current
Extension layer and p-GaAs cover layer, it is characterised in that described active layer include in the cycle InGaAs quantum well layer alternately and
GaAsP barrier layer, described periodicity is 2～6.
The most according to claim 1 for the epitaxial wafer of upside-down mounting infrarede emitting diode, it is characterised in that: at described active layer
One group of InGaAs quantum well layer and GaAsP barrier layer between GaAs layer or layer of InP are set.
The most according to claim 2 for the epitaxial wafer of upside-down mounting infrarede emitting diode, it is characterised in that: described GaAs layer or
The thickness range of layer of InP is 1nm～8nm.
4., for an epitaxial wafer for upside-down mounting infrarede emitting diode, n-GaAs buffering is set in substrate the same side successively extension
Layer, n-GaInP etch stop layers, n-GaAs contact layer, n-AlxGa1-xAs current extending, n-AlxGa1-xAs lower limit layer,
AlxGa1-xAs lower waveguide layer, active layer, AlxGa1-xThe upper ducting layer of As, p-AlxGa1-xAs upper limiting layer, p-AlxGa1-xAs electric current
Extension layer and p-GaAs cover layer, it is characterised in that described active layer include in the cycle InGaAs quantum well layer alternately and
GaAs barrier layer, described periodicity is 2～6.
The most according to claim 4 for the epitaxial wafer of upside-down mounting infrarede emitting diode, it is characterised in that: described active layer
Between one group of InGaAs quantum well layer and GaAs barrier layer, InGaAs layer is set.
The most according to claim 5 for the epitaxial wafer of upside-down mounting infrarede emitting diode, it is characterised in that: described InGaAs
The thickness range of layer is 1nm～8nm.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110101A (en) * | 2017-12-01 | 2018-06-01 | 天津三安光电有限公司 | A kind of yellowish green light-emitting diode |
| CN108550666A (en) * | 2018-05-02 | 2018-09-18 | 天津三安光电有限公司 | Upside-down mounting quaternary system light emitting diode epitaxial structure, upside-down mounting quaternary series LED and its growing method |
| CN109860354A (en) * | 2018-12-28 | 2019-06-07 | 南京邮电大学 | Homogeneity integrates infrared photon chip and preparation method thereof |
| CN109873067A (en) * | 2019-03-12 | 2019-06-11 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN110165552A (en) * | 2019-06-10 | 2019-08-23 | 厦门乾照半导体科技有限公司 | One kind having high-power VCSEL chip and preparation method thereof |
| CN111276582A (en) * | 2020-04-30 | 2020-06-12 | 山西飞虹微纳米光电科技有限公司 | Epitaxial structure of 940nm infrared LED and preparation method thereof |
| CN112072467A (en) * | 2019-06-11 | 2020-12-11 | 全新光电科技股份有限公司 | Semiconductor laser diode |
| CN112968088A (en) * | 2021-03-10 | 2021-06-15 | 扬州乾照光电有限公司 | Flip infrared light emitting diode and preparation method thereof |
| US20210265528A1 (en) * | 2018-11-02 | 2021-08-26 | Huawei Technologies Co., Ltd. | Silicon-based substrate, substrate, manufacturing method thereof, and optoelectronic device |
| CN114038960A (en) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Micro light emitting diode epitaxial structure, manufacturing method thereof and micro light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108110101A (en) * | 2017-12-01 | 2018-06-01 | 天津三安光电有限公司 | A kind of yellowish green light-emitting diode |
| CN108550666A (en) * | 2018-05-02 | 2018-09-18 | 天津三安光电有限公司 | Upside-down mounting quaternary system light emitting diode epitaxial structure, upside-down mounting quaternary series LED and its growing method |
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| CN110165552A (en) * | 2019-06-10 | 2019-08-23 | 厦门乾照半导体科技有限公司 | One kind having high-power VCSEL chip and preparation method thereof |
| CN112072467A (en) * | 2019-06-11 | 2020-12-11 | 全新光电科技股份有限公司 | Semiconductor laser diode |
| CN111276582A (en) * | 2020-04-30 | 2020-06-12 | 山西飞虹微纳米光电科技有限公司 | Epitaxial structure of 940nm infrared LED and preparation method thereof |
| CN112968088A (en) * | 2021-03-10 | 2021-06-15 | 扬州乾照光电有限公司 | Flip infrared light emitting diode and preparation method thereof |
| CN114038960A (en) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Micro light emitting diode epitaxial structure, manufacturing method thereof and micro light emitting diode |
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Application publication date: 20170104 |