CN100580966C - Green light-emitting diode - Google Patents
Green light-emitting diode Download PDFInfo
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- CN100580966C CN100580966C CN200810200457A CN200810200457A CN100580966C CN 100580966 C CN100580966 C CN 100580966C CN 200810200457 A CN200810200457 A CN 200810200457A CN 200810200457 A CN200810200457 A CN 200810200457A CN 100580966 C CN100580966 C CN 100580966C
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- insert layer
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- green light
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Abstract
The invention provides a green LED, comprising an InxGa1-xN/GaN multi-quantum well which has an insert layer; wherein x is more than or equal to 0.15 and less than or equal to 0.35. The insert layer is InyGa1-yN, wherein y is more than x and is less than or equal to 1; or that the insert layer is AlyGa1-y/N, wherein y is more than 0 and less than or equal to 1; or that the insert layer is IncAl1-Cn, wherein c is more than x and is less than or equal to 1; or that the inert layer is AlaInbGa1-a-Bn, wherein a is more than 0 and less than 1, b is more than 0 and less than 1, and the values of a and b meet the requirement that the potential barrier of AlaInbGa1-a-Bn is higher than that of GaN. The insert layer is 0.1-5nm thick, and the number of the quanta well of the InxGa1-xN/GaN multi-quanta well is 1-20. The LED can reduce V type defects between the InGaN and the GaN, reduce the precipitation of component In; and the green LED is of high brightness and strong anti-static capability.
Description
Technical field
The present invention relates to the optoelectronic semiconductor field, relate in particular to a kind of green light LED.
Background technology
GaN base III-V group-III nitride is the semiconductor material with wide forbidden band of important direct band gap.The GaN sill has excellent machinery and chemical property, excellent photoelectric property, to 6.2eV (AlN), emission wavelength has been contained far infrared to its bandgap range, and is infrared from 0.7eV (InN) under the room temperature, visible light, ultraviolet light, deep ultraviolet, the GaN sill is at blue light, green glow, field of optoelectronic devices such as purple light and the white light-emitting diodes background that is widely used.
The external quantum efficiency of GaN base blue-ray LED obtained great raising in recent years, reach about 45% (referring to: Appl.Phys.Lett., 89,071109 etc.), but the external quantum efficiency of green light LED is much lower (referring to Appl.Phys.Lett. with respect to GaN basic blue-ray LED, 86,101903 etc.).Green light LED needs the In of high-quality high In ingredient
xGa
1-xN/GaN quantum well (x 〉=15%), yet because the InGaN material of high In ingredient takes place by In be separated easily, and In
xGa
1-xThe interface of N/GaN Multiple Quantum Well is easy to generate a large amount of V-type defectives, is that the green light LED external quantum efficiency is low, the main cause of antistatic effect difference.
In order to overcome the problems referred to above of the prior art, the present inventor has carried out research extensively and profoundly in the light-emitting diode field, generation of the present invention is arranged eventually.
Summary of the invention
The present invention is directed to the above-mentioned technical problem that exists in the prior art has proposed to constitute a kind of green light LED by introduce one deck insert layer in epitaxial growth InGaN/GaN quantum well, this type of diode can reduce the V-type defective between InGaN and GaN, and reduce separating out of In component, be a kind of high brightness, green light LED that antistatic effect is strong.
A kind of green light LED comprises the In that contains an insert layer
xGa
1-xN/GaN Multiple Quantum Well, wherein 0.15≤x≤0.35.
As a preferred embodiment of the present invention, described insert layer is In
yGa
1-yN, wherein x＜y≤1.
As another kind of preferred version of the present invention, described insert layer is Al
yGa
1-yN, wherein 0＜y≤1.
As another preferred version of the present invention, described insert layer is In
cAl
1-cN, wherein x＜c≤1.
As another preferred version of the present invention, described insert layer is Al
aIn
bGa
1-a-bN, wherein 0＜a＜1,0＜b＜1 and a, the value of b need satisfy Al
aIn
bGa
1-a-bThe potential barrier of N is higher than the potential barrier of GaN.
As another preferred version of the present invention, the thickness of described insert layer is 0.1～5nm.
As another preferred version of the present invention, described In
xGa
1-xThe quantum well number of N/GaN Multiple Quantum Well is 1～20.
The present invention constitutes a kind of green light LED by introduce one deck insert layer in epitaxial growth InGaN/GaN quantum well, this type of diode can reduce the V-type defective between InGaN and GaN, and reduce separating out of In component, be a kind of high brightness, green light LED that antistatic effect is strong, after introducing insert layer, brightness under the 20mA of the green light LED chip of 300 microns * 300 microns 520nm is increased to 250mcd by 100mcd, and the antistatic effect of chip is increased to Human Body Model 4000V by Human Body Model 500V.
Further specify the present invention below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Wherein, 1, Sapphire Substrate, 2, the GaN nucleating layer, 3, non-Doped GaN layer, 4, n type GaN layer, 5, InGaN/GaN multiple quantum well active layer, wherein 5a is an InGaN trap layer, 5b is an insert layer, 5c is that GaN builds layer, the quantum well number is 1～20,6, p type AlGaN carrier barrier layer, 7, p type GaN layer.
Fig. 2 is the luminous power of the present invention and common green light LED and the contrast schematic diagram of current curve.
Wherein, curve 1 is the luminous power and the current curve of the light-emitting diode of the present invention's volume minor structure of containing insert layer; Curve 2 is luminous power and current curves of light-emitting diode of the multi-quantum pit structure of no insert layer.
Embodiment
A kind of green light LED comprises the In that contains an insert layer
xGa
1-xN/GaN Multiple Quantum Well, wherein 0.15≤x≤0.35.
Described insert layer is In
yGa
1-yN, wherein x＜y≤1; Described insert layer is Al
yGa
1-yN, wherein 0＜y≤1; Described insert layer is In
cAl
1-cN, wherein x＜c≤1; Described insert layer is Al
aIn
bGa
1-a-bN, wherein 0＜a＜1,0＜b＜1 and a, the value of b need satisfy Al
aIn
bGa
1-a-bThe potential barrier of N is higher than the potential barrier of GaN; The thickness of described insert layer is 0.1～5nm; Described In
xGa
1-xThe quantum well number of N/GaN Multiple Quantum Well is 1～20.
A kind of epitaxy method of epitaxial wafer of the MOCVD growth nitride light-emitting diode of growing, it adopts the MOCVD method, uses high-purity N H
3Do the N source, trimethyl gallium or triethyl-gallium are done the gallium source, and trimethyl indium is done the indium source, and trimethyl aluminium is done the aluminium source, and silane is made n type dopant, and two luxuriant magnesium are made p type dopant; At first using H under the high temperature in the MOCVD reative cell
2Processing Sapphire Substrate surface, the growing low temperature nucleating layer of lowering the temperature then, then growing GaN resilient coating at high temperature comprises non-Doped GaN layer and mixes the n type GaN layer of Si; Priority epitaxial device structure on the GaN resilient coating comprises the InGaN/GaN Multiple Quantum Well then, and there are an insert layer in p type AlGaN electronic barrier layer and p type GaN layer in the described InGaN/GaN Multiple Quantum Well.The InGaN/GaN Multiple Quantum Well that comprises insert layer is applicable to but is not limited to green light LED.The In that comprises insert layer
xGa
1-xThe insert layer of N/GaN Multiple Quantum Well can be In
yGa
1-yN, x＜y≤1 wherein, the thickness 0.1～5nm of this layer; Also can be Al
yGa
1-yN, 0＜y≤1 wherein, the thickness of this layer is 0.1～5nm;
Utilize the green light LED of MOCVD equipment epitaxial growth high brightness, used substrate is the sapphire of (001) face.As shown in Figure 1, at first in the MOCVD reative cell, Sapphire Substrate 1 is heated to 1200 ℃, at H
2Under handle 5min, temperature is reduced to 500～600 ℃ of growing GaN nucleating layers 2 then, the about 30nm of thickness; Temperature rises to 1160 ℃ then, H
2Do carrier gas, with the GaN resilient coating of 3.0 microns/hour growth rate epitaxial growth 4 micron thickness, comprising the involuntary Doped GaN layer 3 of 0.5 micron thickness and the n type GaN resilient coating 4 of mixing Si of 3.5 micron thickness, the doping content of silicon is 5 * 10
17Cm
-3To 5 * 10
19Cm
-3Between; Then temperature is reduced between 650～750 ℃, carrier gas switches to N
2, 5 In of growth on this resilient coating
0.2Ga
0.8N (2.5nm)/In
0.8Ga
0.2N (0.5nm)/GaN (10nm), wherein the molar flow of TEGa is 0.1 * 10
-5Moles/min to 1.5 * 10
-5Moles/min, the molar flow of TMIn are 5 * 10
-5Moles/min to 10 * 10
-5Between the moles/min, NH
3Flow be 12 liters/minute, then temperature is increased to 1000～1100 ℃, H
2Do carrier gas, the thick p type Al of growth 25nm
0.15Ga
0.85The p type GaN layer that N and 200nm are thick, the Mg doping content is 5 * 10
19Cm
-3To 5 * 10
20Cm
-3Between.
Utilize the green light LED of MOCVD equipment epitaxial growth high brightness, used substrate is the sapphire of (001) face.As shown in Figure 1, at first in the MOCVD reative cell, Sapphire Substrate 1 is heated to 1200 ℃, at H
2Under handle 5min, temperature is reduced to 500～600 ℃ of growing GaN nucleating layers 2 then, the about 30nm of thickness; Temperature rises to 1160 ℃ then, H
2Do carrier gas, with the GaN resilient coating of 3.0 microns/hour growth rate epitaxial growth 4 micron thickness, comprising the involuntary Doped GaN layer 3 of 0.5 micron thickness and the n type GaN resilient coating 4 of mixing Si of 3.5 micron thickness, the doping content of silicon is 5 * 10
17Cm
-3To 5 * 10
19Cm
-3Between; Then temperature is reduced between 650～750 ℃, carrier gas switches to N
2, 5 In of growth on this resilient coating
0.2Ga
0.8N (2.5nm)/Al
0.8Ga
0.2N (0.5nm)/GaN (10nm), wherein the molar flow of TEGa is 0.1 * 10
-5Moles/min to 1.5 * 10
-5Moles/min, the molar flow of TMIn are 5 * 10
-5Moles/min to 10 * 10
-5Between the moles/min, the molar flow of TMAl is 1.0 * 10
-5Moles/min, NH
3Flow be 12 liters/minute, then temperature is increased to 1000～1100 ℃, H
2Do carrier gas, the thick p type Al of growth 25nm
0.15Ga
0.85The p type GaN layer that N and 200nm are thick, the Mg doping content is 5 * 10
19Cm
-3To 5 * 10
20Cm
-3Between.
The present invention constitutes a kind of green light LED by introduce one deck insert layer in epitaxial growth InGaN/GaN quantum well, this type of diode can reduce the V-type defective between InGaN and GaN, and reduce separating out of In component, be a kind of high brightness, green light LED that antistatic effect is strong, after introducing insert layer, brightness under the 20mA of the green light LED chip of 300 microns * 300 microns 520nm is increased to 250mcd by 100mcd, and the antistatic effect of chip is increased to Human Body Model 4000V by Human Body Model 500V.
Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose is to make those of ordinary skill in the art can understand content of the present invention and implements according to this, therefore can not only limit claim of the present invention with this, be that all equalizations of doing according to disclosed spirit change or modification, must be encompassed in the claim of the present invention.
Claims (3)
1, a kind of green light LED is characterized in that: described green light LED comprises the In that contains an insert layer
xGa
1-xN/GaN Multiple Quantum Well, wherein 0.15≤x≤0.35; Described insert layer is In
yGa
1-yN, wherein x＜y≤1; Or described insert layer is Al
dGa
1-dN, wherein 0＜d≤1; Or described insert layer is In
cAl
1-cN, wherein x＜c≤1; Or described insert layer is Al
aIn
bGa
1-a-bN, wherein 0＜a＜1,0＜b＜1 and a, the value of b need satisfy Al
aIn
bGa
1-a-bThe potential barrier of N is higher than the potential barrier of GaN.
2, green light LED as claimed in claim 1 is characterized in that: the thickness of described insert layer is 0.1～5nm.
3, green light LED as claimed in claim 1 is characterized in that: described In
xGa
1-xThe quantum well number of N/GaN Multiple Quantum Well is 1～20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810200457A CN100580966C (en) | 2008-09-25 | 2008-09-25 | Green light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810200457A CN100580966C (en) | 2008-09-25 | 2008-09-25 | Green light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101359711A CN101359711A (en) | 2009-02-04 |
| CN100580966C true CN100580966C (en) | 2010-01-13 |
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ID=40332100
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|---|---|---|---|
| CN200810200457A Expired - Fee Related CN100580966C (en) | 2008-09-25 | 2008-09-25 | Green light-emitting diode |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887392B (en) * | 2014-03-28 | 2017-04-05 | 西安神光皓瑞光电科技有限公司 | A kind of epitaxial growth method of raising LED luminous efficiencies |
| CN104037274B (en) * | 2014-06-16 | 2017-06-09 | 西安神光皓瑞光电科技有限公司 | A kind of LED luminescent layers epitaxial growth method and structure |
| CN104638076B (en) * | 2015-02-06 | 2017-07-21 | 苏州新纳晶光电有限公司 | A kind of LED epitaxial structure for increasing LED backward impedances and preparation method thereof |
| CN108735864B (en) * | 2018-05-28 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of preparation method of LED epitaxial slice |
| CN109671813B (en) * | 2018-11-07 | 2021-01-12 | 华灿光电（浙江）有限公司 | GaN-based light emitting diode epitaxial wafer and preparation method thereof |
| CN109873299B (en) * | 2019-02-14 | 2020-02-21 | 中国科学院半导体研究所 | GaN-based multiple quantum well laser epitaxial wafer with low V-type defect density and preparation method thereof |
| CN110401106A (en) * | 2019-07-10 | 2019-11-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN base light emitting semiconductor device and preparation method thereof with AlGaN insert layer |
| CN111900237A (en) * | 2020-08-13 | 2020-11-06 | 厦门乾照光电股份有限公司 | Ultraviolet LED chip and manufacturing method thereof |
| CN116615808A (en) * | 2020-11-16 | 2023-08-18 | 苏州晶湛半导体有限公司 | Multiple quantum well structure, light emitting diode and light emitting assembly |
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- 2008-09-25 CN CN200810200457A patent/CN100580966C/en not_active Expired - Fee Related
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