CN204441319U - A kind of high brightness LED - Google Patents
A kind of high brightness LED Download PDFInfo
- Publication number
- CN204441319U CN204441319U CN201520083433.8U CN201520083433U CN204441319U CN 204441319 U CN204441319 U CN 204441319U CN 201520083433 U CN201520083433 U CN 201520083433U CN 204441319 U CN204441319 U CN 204441319U
- Authority
- CN
- China
- Prior art keywords
- tin oxide
- indium tin
- transparent film
- oxide transparent
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Devices (AREA)
Abstract
A kind of high brightness LED, belong to photoelectron technical field, set gradually N-GaAs transition zone, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, magnesium-doped P-GaP current extending, indium tin oxide transparent film and the first electrode in the one side of permanent substrate GaAs, the second electrode is set at the another side of permanent substrate GaAs.Between magnesium-doped P-GaP current extending and indium tin oxide transparent film, patterned contact point is set.Because indium tin oxide transparent film has good current expansion ability, uniform current by this indium tin oxide transparent film, then is injected into whole chip surface by contact point by electrode, thus reduces electric current the gathering of side under the electrodes, decrease the invalid injection of electric current, improve luminous efficiency.
Description
Technical field
The utility model belongs to photoelectron technical field, particularly the manufacturing technology field of AlGaInP quaternary series LED.
Background technology
Quaternary system AlGaInP is a kind of semi-conducting material with direct broad-band gap, has been widely used in the preparation of multiple opto-electronic device.Due to material emission wave band can the ruddiness of covering visible light to yellow green wave band, the visible light emitting diode made thus is subject to extensive concern.
Traditional AlGaInP light-emitting diode in vertical structure by thick P-GaP current extending carry out extending transversely after by pulse current injectingt luminous zone, but because P-GaP current expansion is limited in one's ability, base part near zone current density is higher, the zone current density that ionization electrode is far away is lower, cause overall current injection efficiency on the low side, thus reduce the light extraction efficiency of light-emitting diode.
High brightness reversed polarity AlGaInP chip adopts bonding technology to realize substrate displacement, the silicon substrate (thermal conductivity of silicon is about 1.5W/K.cm) using good in thermal property replaces gallium arsenide substrate (thermal conductivity of GaAs is about 0.8W/K.cm), chip has more low-heat resistance, and heat dispersion is better.The Omni-directional reflector technology of high reflectance is adopted to improve reflection efficiency.Adopt surface texture technology to improve the total reflection of chip and encapsulating material interface, brightness can be higher.But because making step is various, technique is very complicated, and cause cost of manufacture higher, rate of finished products is low.
Utility model content
The utility model object proposes a kind of high brightness LED that can promote light-emitting diode light extraction efficiency.
Technical solutions of the utility model are: set gradually N-GaAs transition zone, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, magnesium-doped P-GaP current extending, indium tin oxide transparent film and the first electrode in the one side of permanent substrate GaAs, second electrode is set at the another side of permanent substrate GaAs, it is characterized in that arranging patterned contact point between described magnesium-doped P-GaP current extending and indium tin oxide transparent film.
Because indium tin oxide transparent film has good current expansion ability, uniform current by this indium tin oxide transparent film, then is injected into whole chip surface by contact point by electrode, thus reduces electric current the gathering of side under the electrodes, decrease the invalid injection of electric current, improve luminous efficiency.
The thickness of magnesium-doped P-GaP current extending described in the utility model is 2000nm ~ 4000nm.Both can guarantee same P-GaP and form good electricity contact, and can ensure again still can form good electricity contact, to alleviate the pressure of contact point pulse current injectingt with P-GaP after alligatoring.
In addition, the thickness of indium tin oxide transparent film of the present utility model is 250 ~ 300nm.This thickness is the best optical thickness being played enhanced shine by the corresponding ruddiness of optical computing gained.
Contact point described in the utility model is cylindrical, and diameter is 3 ~ 5 μm, is highly 200 ~ 400nm.The cylindrical wet processing that is easy to is implemented, and not easily by lateral erosion, diameter 3 ~ 5 μm, is highly that 200 ~ 400nm optimizes preferred process window for contrast, under the prerequisite ensureing enough electricity contacts area, does not affect bright dipping.
P-GaP current extending of the present utility model makes contact point and forms good ohmic contact with indium tin oxide, the alligatoring degree of depth of certain depth is guaranteed indium tin oxide can not be too high with the contact berrier in alligatoring face, thus change the distribution of pulse current injectingt, effective motor current injection efficiency, improve the luminous intensity of light-emitting diode, highly doped regions is made into patterned contact point, ohmic contact is formed with indium and tin oxide film, surface roughening process is carried out by wet solution in other regions of contact point, reduce the generation of P-GaP surface total reflection, promote light extraction efficiency.Electric current flows into indium and tin oxide film layer through the first electrode, indium and tin oxide film layer lateral resistance is less than the contact resistance of same P-GaP, electric current first carry out on indium tin oxide extending transversely after, be injected in P-GaP current extending through equally distributed contact point, and then be with active layer, motor current injection efficiency greatly, improves the luminous intensity of light-emitting diode.Simultaneously because technique is simple, have traditional structure light-emitting diode cost low, the advantage that yield is high, suitable batchization is produced, and is beneficial to the product obtaining high-quality, low cost.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the utility model finished product.
Embodiment
One, be that the utility model manufacturing step is as follows as shown in Figure 1:
1, epitaxial wafer is made: utilize MOCVD device on a permanent substrate GaAs101 face, grow N-GaAs transition zone 102, AlAs/AlGaAs reflector 103, N-AlGaInP lower limit layer 104, MQW multiple quantum well active layer 105, P-AlGaInP upper limiting layer 106, P-GaInP resilient coating 107, magnesium-doped P-GaP current extending 108 successively.
Wherein magnesium-doped P-GaP current extending 108 preferred thickness 3000nm, doped chemical is magnesium (Mg), to guarantee to form good ohmic contact, the top layer doping content longitudinally distribution in staged: the doping content close to the magnesium of resilient coating is 7 × 10
17cm
-3, away from the doping content of the magnesium of resilient coating (i.e. top layer) from 8 × 10
17cm
-3to 1 × 10
19cm
-3, top layer doping depth is 400nm.
2, utilize 511 cleaning fluid cleaning P-GaP current extendings 108, spin coating positive photoresist on P-GaP current extending 108, by exposure, development, produces circular pattern.After playing glue by plasma again, utilize the acid iodide that volume ratio is 1:5:5: hydrofluoric acid: glacial acetic acid mixed liquor, alligatoring 90s, alligatoring goes out the rough morphology of surface uniform, and the alligatoring degree of depth is 200 ~ 400nm.Produce patterned contact point 110, by removing photoresist, liquid removes photomask surface glue simultaneously.That is, protected with photoresist in the region prepared as contact point 110, wet method alligatoring is carried out in other regions, should both realize simultaneously.
Patterned contact point 110 to be equally distributedly cylindrically made up of multiple, and each columniform diameter is 3 μm, is highly 200nm.
3, sample good for alligatoring is immersed acetone soln and carry out ultrasonic cleaning 10min, adopt electron beam evaporation plating mode, at the indium tin oxide transparent film 109 that the magnesium-doped P-GaP current extending 108 of alligatoring and contact point 110 surface deposition thickness are 250nm, indium tin oxide transparent film 109 transmitance ensures that, more than 95%, square resistance is within 10.
4, the sample of complete for evaporation tin indium oxide is immersed acetone soln and carry out ultrasonic cleaning 10min, spin coating negative photoresist, through overbaking, exposure, baking, produces electrode pattern after development, after sample being spin-dried for by high speed spinner, adopt electron beam evaporation plating mode evaporation first electrode 111, electrode material is Cr, Ti, Pt, Au, and thickness is respectively 30nm, 50nm, 100nm, 3000nm.
5, by grinder, chip is ground to 200 μm of thickness.
6, ground sample is immersed acetone soln and carry out ultrasonic cleaning 10min, adopt the mode of electron beam evaporation plating to make the second electrode 112 at the back side of substrate GaAs101, electrode material is AuGe, Au, and thickness is respectively 100nm, 20nm.
7, RTA annealing furnace is adopted to anneal to chip, annealing temperature 400 DEG C, annealing time 10s.Namely the making of device is completed.
Two, the product structure feature made:
As shown in Figure 1, a permanent substrate GaAs101 one side is disposed with N-GaAs transition zone 102, AlAs/AlGaAs reflector 103, N-AlGaInP lower limit layer 104, MQW multiple quantum well active layer 105, P-AlGaInP upper limiting layer 106, P-GaInP resilient coating 107, P-GaP current extending 108, transparency conducting layer 109, first electrode 111, the second electrode 112 is set at the another side of a permanent substrate GaAs101.
Due to the current expansion ability that Indium-tin Oxide Transparent Conductive Film is good, uniform current by tin indium oxide, then is injected into whole chip surface by contact point by electrode, thus reduces electric current the gathering of side under the electrodes, decrease the invalid injection of electric current, improve luminous efficiency.
Claims (4)
1. a high brightness LED, N-GaAs transition zone, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, magnesium-doped P-GaP current extending, indium tin oxide transparent film and the first electrode is set gradually in the one side of permanent substrate GaAs, second electrode is set at the another side of permanent substrate GaAs, it is characterized in that arranging patterned contact point between described magnesium-doped P-GaP current extending and indium tin oxide transparent film.
2. high brightness LED according to claim 1, is characterized in that the thickness of described magnesium-doped P-GaP current extending is 2000nm ~ 4000nm.
3. high brightness LED according to claim 1, is characterized in that the thickness of described indium tin oxide transparent film is 250 ~ 300nm.
4. high brightness LED according to claim 1, it is characterized in that described contact point is cylindrical, diameter is 3 ~ 5 μm, is highly 200 ~ 400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520083433.8U CN204441319U (en) | 2015-02-06 | 2015-02-06 | A kind of high brightness LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520083433.8U CN204441319U (en) | 2015-02-06 | 2015-02-06 | A kind of high brightness LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204441319U true CN204441319U (en) | 2015-07-01 |
Family
ID=53609150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520083433.8U Active CN204441319U (en) | 2015-02-06 | 2015-02-06 | A kind of high brightness LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204441319U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN104576863B (en) * | 2015-02-06 | 2017-07-18 | 扬州乾照光电有限公司 | A kind of high brightness LED and its manufacture method |
| CN107195731A (en) * | 2017-04-14 | 2017-09-22 | 扬州乾照光电有限公司 | A kind of positive polarity high brightness AlGaInP light emitting diodes and its manufacture method |
| CN107958946A (en) * | 2017-11-17 | 2018-04-24 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
-
2015
- 2015-02-06 CN CN201520083433.8U patent/CN204441319U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576863B (en) * | 2015-02-06 | 2017-07-18 | 扬州乾照光电有限公司 | A kind of high brightness LED and its manufacture method |
| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN105428485B (en) * | 2015-12-21 | 2019-06-21 | 扬州乾照光电有限公司 | The AlGaInP base LED and its manufacturing method of GaP roughing in surface |
| CN107195731A (en) * | 2017-04-14 | 2017-09-22 | 扬州乾照光电有限公司 | A kind of positive polarity high brightness AlGaInP light emitting diodes and its manufacture method |
| CN107958946A (en) * | 2017-11-17 | 2018-04-24 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104576863B (en) | A kind of high brightness LED and its manufacture method | |
| CN104300059B (en) | Light emitting diode and its manufacture method with distributed conductive via structure | |
| CN104600164B (en) | Efficient current injection light-emitting diode and method for manufacturing same | |
| CN100438110C (en) | LED with the current transfer penetration-enhanced window layer structure | |
| CN107195731B (en) | A kind of positive polarity high brightness AlGaInP light emitting diode and its manufacturing method | |
| CN105957938B (en) | A kind of the AlGaInP based light-emitting diodes wafer and its manufacturing method of high brightness reversed polarity | |
| CN204441319U (en) | A kind of high brightness LED | |
| CN104617195A (en) | Near infrared LED and production method thereof | |
| CN104300065A (en) | Light-emitting diode with novel extension electrode structure and manufacturing method thereof | |
| CN201060869Y (en) | LED with current transport anti-reflecting window layer structure | |
| CN105932131A (en) | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof | |
| CN109411582A (en) | A kind of LED chip of roughing in surface and preparation method thereof | |
| CN204441318U (en) | A kind of efficient current injection luminescent diode | |
| CN205790050U (en) | A kind of AlGaInP based light-emitting diode wafer of high brightness reversed polarity | |
| CN204189818U (en) | There is the light-emitting diode of distributed conductive via structure | |
| CN105449057B (en) | A kind of light emitting diode in integrated porous shape reflecting layer | |
| CN104112805B (en) | A kind of light emitting diode and its manufacture method with nonproliferation layer | |
| CN205790047U (en) | A kind of vertical stratification AlGaInP based light-emitting diode | |
| CN206003830U (en) | A kind of patterning high brightness AlGaInP light emitting diode | |
| CN206003808U (en) | There is the high brightness AlGaInP light emitting diode of AZO roughened layer | |
| CN105914274A (en) | Side-wall-coarsened high-brightness light emitting diode and preparation method thereof | |
| CN104681678B (en) | The light emitting diode and its manufacture method of a kind of double mirror structure | |
| CN111180561B (en) | AlGaInP-based light emitting diode chip and manufacturing method thereof | |
| CN204189820U (en) | There is the light-emitting diode of Novel extending electrode structure | |
| CN106098917A (en) | A kind of patterning high brightness AlGaInP light emitting diode and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |