CN107958946A - A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof Download PDFInfo
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- CN107958946A CN107958946A CN201711143898.8A CN201711143898A CN107958946A CN 107958946 A CN107958946 A CN 107958946A CN 201711143898 A CN201711143898 A CN 201711143898A CN 107958946 A CN107958946 A CN 107958946A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof, including：Back electrode layer；Substrate layer positioned at back electrode layer side；Deviate from the light emitting epitaxial layer of back electrode layer side positioned at substrate layer；Deviate from the current extending of back electrode layer side positioned at light emitting epitaxial layer；Deviate from the metallic film roughened layer of back electrode layer side, Ohmic contact between metallic film roughened layer and current extending positioned at current extending, and metallic film roughened layer has a void region；Away from back electrode layer side and the main electrode of void region is arranged at positioned at current extending.Technical solution provided by the invention, the thin roughened layer of metal film is formed in current extending away from back electrode layer side, and then improves the current expansion performance of light emitting diode；Also, due to without Ohmic contact between main electrode and current extending, avoiding main electrode and the light extraction of light emitting epitaxial layer absorbed, and then improving the emitting brightness of light emitting diode.
Description
Technical field
The present invention relates to LED technology field, more specifically, is related to a kind of shining for improvement current expansion
Diode chip for backlight unit and preparation method thereof.
Background technology
Light emitting diode is since it is with luminous efficiency is high, color gamut is wide, power consumption is few, long lifespan, monochrome shine, anti-
Answer speed fast, impact resistance, it is small the advantages that, and be widely used in display device, automotive interior indicator light, household electrical appliances instruction
In the fields such as lamp, traffic lights, home lighting, how to meet the performance for improving light emitting diode, become people in the art
One of member's main direction of studying.Existing light emitting diode, Ohmic contact between its main electrode and current extending, and cause hair
The current expansion poor-performing of optical diode；And Ohmic contact between main electrode and current extending, can also cause main electrode
To the going out light absorbs of light emitting epitaxial layer can not reflection light, and then reduce emitting brightness.
The content of the invention
In view of this, the present invention provides a kind of light-emitting diode chip for backlight unit and preparation method thereof for improving current expansion,
Current extending forms the thin roughened layer of metal film away from back electrode layer side, and then improves the current expansion of light emitting diode
Energy；Also, due to without Ohmic contact between main electrode and current extending, avoiding light extraction of the main electrode to light emitting epitaxial layer
Absorbed, and then improve the emitting brightness of light emitting diode.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of light-emitting diode chip for backlight unit for improving current expansion, including：
Back electrode layer；
Substrate layer positioned at the back electrode layer side；
Deviate from the light emitting epitaxial layer of the back electrode layer side positioned at the substrate layer；
Deviate from the current extending of the back electrode layer side positioned at the light emitting epitaxial layer；
Deviate from the metallic film roughened layer of the back electrode layer side, the metallic film positioned at the current extending
Ohmic contact between roughened layer and the current extending, and the metallic film roughened layer has a void region；
And away from the back electrode layer side and it is arranged at the void region positioned at the current extending
Main electrode.
Optionally, the thickness range of the metallic film roughened layer is 10 angstroms -20 angstroms, including endpoint value.
Optionally, the material of the metallic film roughened layer is a kind of in zinc, beryllium, chromium.
Optionally, the light emitting epitaxial layer includes：
Deviate from the n type semiconductor layer of the back electrode layer side positioned at the substrate layer；
Deviate from the luminescent layer of the back electrode layer side positioned at the n type semiconductor layer；
And deviate from the p type semiconductor layer of the back electrode layer side positioned at the luminescent layer.
Optionally, the current extending is GaP layers.
Correspondingly, present invention also offers a kind of production method for the light-emitting diode chip for backlight unit for improving current expansion, including：
A substrate layer is carried, the light emitting epitaxial layer and current extending of superposition are sequentially formed with the substrate layer；
Metal film layer is formed away from the substrate layer side in the current extending, and the metal film layer has
One void region；
Alloying technology processing is carried out to the metal film layer, forms the gold of the Ohmic contact between the current extending
Belong to film roughened layer；
Main electrode is formed away from the substrate layer side and at the void region in the current extending, and
In substrate layer back electrode layer is formed away from the light emitting epitaxial layer side.
Optionally, the thickness range of the metallic film roughened layer is 10 angstroms -20 angstroms, including endpoint value.
Optionally, the material of the metallic film roughened layer is a kind of in zinc, beryllium, chromium.
Optionally, the light emitting epitaxial layer includes：
Deviate from the n type semiconductor layer of the back electrode layer side positioned at the substrate layer；
Deviate from the luminescent layer of the back electrode layer side positioned at the n type semiconductor layer；
And deviate from the p type semiconductor layer of the back electrode layer side positioned at the luminescent layer.
Optionally, the current extending is GaP layers.
Compared to the prior art, technical solution provided by the invention at least has the following advantages：
The present invention provides a kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof, including：Back side electricity
Pole layer；Substrate layer positioned at the back electrode layer side；Deviate from the hair of the back electrode layer side positioned at the substrate layer
Light epitaxial layer；Deviate from the current extending of the back electrode layer side positioned at the light emitting epitaxial layer；Expand positioned at the electric current
Open up the metallic film roughened layer that layer deviates from the back electrode layer side, the metallic film roughened layer and the current extending
Between Ohmic contact, and the metallic film roughened layer has a void region；And deviate from institute positioned at the current extending
State back electrode layer side and the main electrode for being arranged at the void region.As shown in the above, technology provided by the invention
Scheme, the thin roughened layer of metal film is formed in current extending away from back electrode layer side, and then improves the electricity of light emitting diode
Flow scalability；Also, due to without Ohmic contact between main electrode and current extending, avoiding main electrode to the extension that shines
The light extraction of layer is absorbed, and then improves the emitting brightness of light emitting diode.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structure diagram of light-emitting diode chip for backlight unit for improving current expansion provided by the embodiments of the present application；
Fig. 2 is the structural representation of another light-emitting diode chip for backlight unit for improving current expansion provided by the embodiments of the present application
Figure；
Fig. 3 is the production method of another light-emitting diode chip for backlight unit for improving current expansion provided by the embodiments of the present application
Flow chart；
Fig. 4 a- Fig. 4 d are each corresponding structure flow chart of step in Fig. 3；
Fig. 5 a- Fig. 5 c are a kind of structure flow chart of the production method of metal film layer provided by the embodiments of the present application.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
As described in background, light emitting diode due to its with luminous efficiency is high, color gamut is wide, power consumption is few,
Long lifespan, it is monochromatic shine, reaction speed is fast, impact resistance, it is small the advantages that, and be widely used in display device, automobile
In the fields such as interior lamp, household electrical appliances indicator light, traffic lights, home lighting, how to meet the property for improving light emitting diode
Can, become one of those skilled in the art's main direction of studying.Existing light emitting diode, its main electrode and current extending it
Between Ohmic contact, and cause light emitting diode current expansion poor-performing；And ohm between main electrode and current extending
Contact, can also cause main electrode to the going out light absorbs of light emitting epitaxial layer and can not reflection light, and then reduce emitting brightness.
Based on this, the embodiment of the present application provides a kind of light-emitting diode chip for backlight unit for improving current expansion and its making side
Method, the thin roughened layer of metal film is formed in current extending away from back electrode layer side, and then improves the electric current of light emitting diode
Scalability；Also, due to without Ohmic contact between main electrode and current extending, avoiding main electrode to light emitting epitaxial layer
Light extraction absorbed, and then improve the emitting brightness of light emitting diode.To achieve the above object, the embodiment of the present application provides
Technical solution it is as follows, specifically technical solution provided by the embodiments of the present application is described in detail with reference to Fig. 1 to Fig. 5 c.
Refering to what is shown in Fig. 1, it is a kind of knot for the light-emitting diode chip for backlight unit for improving current expansion provided by the embodiments of the present application
Structure schematic diagram, wherein, light-emitting diode chip for backlight unit includes：
Back electrode layer 100；
Substrate layer 200 positioned at 100 side of back electrode layer；
Deviate from the light emitting epitaxial layer 300 of 100 side of back electrode layer positioned at the substrate layer 200；
Deviate from the current extending 400 of 100 side of back electrode layer positioned at the light emitting epitaxial layer 300；
Deviate from the metallic film roughened layer 500 of 100 side of back electrode layer, institute positioned at the current extending 400
Ohmic contact between metallic film roughened layer 500 and the current extending 400 is stated, and the metallic film roughened layer 500 has
There is a void region；
And away from 100 side of back electrode layer and it is arranged at the hollow out positioned at the current extending 400
The main electrode 600 in region.
In light-emitting diode chip for backlight unit provided by the embodiments of the present application, metallic film roughened layer is very thin side film,
It has no effect on the light extraction of light emitting epitaxial layer, and light transmission is good.The void region of metallic film roughened layer is preferably located at it
Central area；Also, in the main electrode that void region is formed, it is connected between metallic film roughened layer；And this Shen
Please embodiment provide main electrode be only plated film on the surface that current extending corresponds to the void region, and and need not
Ohmic contact is realized between main electrode and current extending, and then avoids the occurrence of problem existing in the prior art.
As shown in the above, technical solution provided by the embodiments of the present application, deviates from back electrode layer in current extending
Side forms the thin roughened layer of metal film, and then improves the current expansion performance of light emitting diode；Also, due to without main electrode with
Ohmic contact between current extending, avoids main electrode and the light extraction of light emitting epitaxial layer is absorbed, and then improves luminous
The emitting brightness of diode.
In one embodiment of the application, the light emitting epitaxial layer that the application provides can be ray structure layer the most basic,
Include n type semiconductor layer, luminescent layer and p type semiconductor layer these three basic structures.With specific reference to shown in Fig. 2, being this Shen
Please the structure diagram of another light-emitting diode chip for backlight unit for improving current expansion that provides of embodiment, wherein, light emitting diode
Chip includes：
Back electrode layer 100；
Substrate layer 200 positioned at 100 side of back electrode layer；
Deviate from the light emitting epitaxial layer 300 of 100 side of back electrode layer positioned at the substrate layer 200；
Deviate from the current extending 400 of 100 side of back electrode layer positioned at the light emitting epitaxial layer 300；
Deviate from the metallic film roughened layer 500 of 100 side of back electrode layer, institute positioned at the current extending 400
Ohmic contact between metallic film roughened layer 500 and the current extending 400 is stated, and the metallic film roughened layer 500 has
There is a void region；
And away from 100 side of back electrode layer and it is arranged at the hollow out positioned at the current extending 400
The main electrode 600 in region.
In addition, the light emitting epitaxial layer 300 includes：
Deviate from the n type semiconductor layer 310 of 100 side of back electrode layer positioned at the substrate layer 200；
Deviate from the luminescent layer 320 of 100 side of back electrode layer positioned at the n type semiconductor layer 310；
And deviate from the p type semiconductor layer 330 of 100 side of back electrode layer positioned at the luminescent layer 320.
It should be noted that in order to improve the performance of upside-down mounting LED chip, upside-down mounting provided by the embodiments of the present application
Light-emitting diode chip for backlight unit can also include more optimization structure sheafs, this application is not particularly limited；Only need to meet
Current extending forms the thin roughened layer of metal film away from back electrode layer side, and without Europe between main electrode and current extending
Nurse contacts this condition.
In the above-mentioned any one embodiment of the application, the thickness of the metallic film roughened layer provided by the embodiments of the present application
It may range from 10 angstroms -20 angstroms, including endpoint value.The material of the metallic film roughened layer provided by the embodiments of the present application is
It is a kind of in zinc, beryllium, chromium.And the current extending that the application provides can be GaP layers.In addition, the embodiment of the present application carries
The substrate layer of confession can be layer-of-substrate silicon, Sapphire Substrate layer, GaAs substrate layers etc., this application is not particularly limited.
Correspondingly, the embodiment of the present application additionally provides a kind of making side for the light-emitting diode chip for backlight unit for improving current expansion
Method, refering to what is shown in Fig. 3, being a kind of production method for the light-emitting diode chip for backlight unit for improving current expansion provided by the embodiments of the present application
Flow chart, wherein, production method includes：
S1, carry a substrate layer, and the light emitting epitaxial layer and current extending of superposition are sequentially formed with the substrate layer；
S2, in the current extending form metal film layer, and the metal film layer away from the substrate layer side
With a void region；
S3, carry out alloying technology processing to the metal film layer, forms the Ohmic contact between the current extending
Metallic film roughened layer；
S4, deviate from the substrate layer side in the current extending and main electrode formed at the void region,
And back electrode layer is formed away from the light emitting epitaxial layer side in substrate layer.
Wherein, production method is retouched in more detail for the structure flow chart on each steps of Fig. 3 with reference to Fig. 4 a-4d
State.
With reference to shown in figure 4a, corresponding step S1, carry a substrate layer 200, and superposition is sequentially formed with the substrate layer 200
Light emitting epitaxial layer 300 and current extending 400.
In any one embodiment of the application, the application provide substrate layer can be layer-of-substrate silicon, Sapphire Substrate layer,
GaAs substrate layers etc., are not particularly limited this application.And the current extending that the application provides can be GaP layers.
With reference to shown in figure 4b, correspond to step S2, formed in the current extending 400 away from 200 side of substrate layer
Metal film layer 50, and the metal film layer 50 has a void region.
Metal film layer provided by the embodiments of the present application is subsequently made as metallic film roughened layer.In one embodiment of the application
In, when making the metal film layer with void region, mask layer can be formed on current extending, then evaporated film is complete
The mask layer is removed after finishing.It is a kind of system of metal film layer provided by the embodiments of the present application with reference to shown in figure 5a- Fig. 5 c
Make the structure flow chart of method, as shown in Figure 5 a, form mask layer away from 200 side of substrate layer in current extending 400 first
10, mask layer 10 is formed after being exposed developing process using photoresist；Then as shown in Figure 5 b, in current extending
400 carry out metal film layer 50 away from 200 side of substrate layer；As shown in Figure 5 c, remove mask layer 10 and thereon finally
Metallic film material, forms the metal film layer 50 finally with void region.
With reference to shown in figure 4c, corresponding step S3, carry out alloying technology processing to the metal film layer 50, formed with it is described
The metallic film roughened layer 500 of Ohmic contact between current extending 400.
When carrying out alloying technology processing to metal film layer, alloying technology temperature can be 480 degrees centigrades.And
In any one embodiment of the application, the thickness range of the metallic film roughened layer provided by the embodiments of the present application can be 10
Angstroms -20 angstroms, including endpoint value.The material of the metallic film roughened layer provided by the embodiments of the present application is zinc, one in beryllium, chromium
Kind.
With reference to shown in figure 4d, corresponding step S4, the current extending 400 away from 200 side of substrate layer and
Main electrode 600 is formed at the void region, and the back of the body is formed away from 300 side of light emitting epitaxial layer in substrate layer 200
Face electrode layer 100.
In one embodiment of the application, the material for the main electrode that the application provides can be Au materials or Al materials.
In one embodiment of the application, the light emitting epitaxial layer that the application provides can be ray structure layer the most basic,
Include n type semiconductor layer, luminescent layer and p type semiconductor layer these three basic structures.Institute i.e. provided by the embodiments of the present application
Stating light emitting epitaxial layer includes：
Deviate from the n type semiconductor layer of the back electrode layer side positioned at the substrate layer；
Deviate from the luminescent layer of the back electrode layer side positioned at the n type semiconductor layer；
And deviate from the p type semiconductor layer of the back electrode layer side positioned at the luminescent layer.
It should be noted that in order to improve the performance of upside-down mounting LED chip, upside-down mounting provided by the embodiments of the present application
Light-emitting diode chip for backlight unit can also include more optimization structure sheafs, this application is not particularly limited；Only need to meet
Current extending forms the thin roughened layer of metal film away from back electrode layer side, and without Europe between main electrode and current extending
Nurse contacts this condition.
The embodiment of the present application provides a kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof, including：
Back electrode layer；Substrate layer positioned at the back electrode layer side；Deviate from the back electrode layer one positioned at the substrate layer
The light emitting epitaxial layer of side；Deviate from the current extending of the back electrode layer side positioned at the light emitting epitaxial layer；Positioned at described
Current extending deviates from the metallic film roughened layer of the back electrode layer side, the metallic film roughened layer and the electric current
Ohmic contact between extension layer, and the metallic film roughened layer has a void region；And positioned at the current extending
Away from the back electrode layer side and it is arranged at the main electrode of the void region.As shown in the above, the application is implemented
The technical solution that example provides, the thin roughened layer of metal film is formed in current extending away from back electrode layer side, and then improves hair
The current expansion performance of optical diode；Also, due to without Ohmic contact between main electrode and current extending, avoiding main electricity
Extremely the light extraction of light emitting epitaxial layer is absorbed, and then improves the emitting brightness of light emitting diode.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (10)
- A kind of 1. light-emitting diode chip for backlight unit for improving current expansion, it is characterised in that including：Back electrode layer；Substrate layer positioned at the back electrode layer side；Deviate from the light emitting epitaxial layer of the back electrode layer side positioned at the substrate layer；Deviate from the current extending of the back electrode layer side positioned at the light emitting epitaxial layer；Deviate from the metallic film roughened layer of the back electrode layer side, the metallic film roughening positioned at the current extending Ohmic contact between layer and the current extending, and the metallic film roughened layer has a void region；And away from the back electrode layer side and it is arranged at the main electricity of the void region positioned at the current extending Pole.
- 2. the light-emitting diode chip for backlight unit according to claim 1 for improving current expansion, it is characterised in that the metallic film The thickness range of roughened layer is 10 angstroms -20 angstroms, including endpoint value.
- 3. the light-emitting diode chip for backlight unit according to claim 1 for improving current expansion, it is characterised in that the metallic film The material of roughened layer is zinc, a kind of in beryllium, chromium.
- 4. the light-emitting diode chip for backlight unit according to claim 1 for improving current expansion, it is characterised in that the luminous extension Layer includes：Deviate from the n type semiconductor layer of the back electrode layer side positioned at the substrate layer；Deviate from the luminescent layer of the back electrode layer side positioned at the n type semiconductor layer；And deviate from the p type semiconductor layer of the back electrode layer side positioned at the luminescent layer.
- 5. the light-emitting diode chip for backlight unit according to claim 1 for improving current expansion, it is characterised in that the current expansion Layer is GaP layers.
- A kind of 6. production method for the light-emitting diode chip for backlight unit for improving current expansion, it is characterised in that including：A substrate layer is carried, the light emitting epitaxial layer and current extending of superposition are sequentially formed with the substrate layer；Metal film layer is formed away from the substrate layer side in the current extending, and the metal film layer has one to engrave Dummy section；Alloying technology processing is carried out to the metal film layer, forms the metal foil of the Ohmic contact between the current extending Film roughened layer；Main electrode is formed away from the substrate layer side and at the void region in the current extending, and is being served as a contrast Bottom forms back electrode layer away from the light emitting epitaxial layer side.
- 7. the production method of the light-emitting diode chip for backlight unit according to claim 6 for improving current expansion, it is characterised in that institute The thickness range for stating metallic film roughened layer is 10 angstroms -20 angstroms, including endpoint value.
- 8. the production method of the light-emitting diode chip for backlight unit according to claim 6 for improving current expansion, it is characterised in that institute The material for stating metallic film roughened layer is zinc, one kind in beryllium, chromium.
- 9. the production method of the light-emitting diode chip for backlight unit according to claim 6 for improving current expansion, it is characterised in that institute Stating light emitting epitaxial layer includes：Deviate from the n type semiconductor layer of the back electrode layer side positioned at the substrate layer；Deviate from the luminescent layer of the back electrode layer side positioned at the n type semiconductor layer；And deviate from the p type semiconductor layer of the back electrode layer side positioned at the luminescent layer.
- 10. the method for manufacturing light-emitting diode chip according to claim 6 for improving current expansion, it is characterised in that institute Current extending is stated as GaP layers.
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| CN201711143898.8A CN107958946A (en) | 2017-11-17 | 2017-11-17 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
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| CN201711143898.8A CN107958946A (en) | 2017-11-17 | 2017-11-17 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
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Application publication date: 20180424 |