KR20130091950A - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Semiconductor light emitting device and method of manufacturing the same Download PDF

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Publication number
KR20130091950A
KR20130091950A KR1020120013324A KR20120013324A KR20130091950A KR 20130091950 A KR20130091950 A KR 20130091950A KR 1020120013324 A KR1020120013324 A KR 1020120013324A KR 20120013324 A KR20120013324 A KR 20120013324A KR 20130091950 A KR20130091950 A KR 20130091950A
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KR
South Korea
Prior art keywords
light emitting
layer
semiconductor
emitting device
compound semiconductor
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KR1020120013324A
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Korean (ko)
Inventor
김순회
안성진
이성욱
공문헌
김동섭
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삼성전자주식회사
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Priority to KR1020120013324A priority Critical patent/KR20130091950A/en
Publication of KR20130091950A publication Critical patent/KR20130091950A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The disclosed semiconductor light emitting device includes a compound semiconductor structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are stacked, and a transmittance adjusting layer provided on a light emitting surface of the compound semiconductor structure, and has a specification required through a transmittance control layer. You can adjust the brightness.

Description

Semiconductor light emitting device and method for manufacturing same

The present disclosure relates to a semiconductor light emitting device whose brightness is controlled and a method of manufacturing the same.

Semiconductor light emitting devices, such as LEDs (Light Emitting Diodes) or LDs (laser diodes), which convert electrical signals into light using characteristics of semiconductors, are currently being applied in various fields such as display devices and lighting devices.

The semiconductor light emitting device uses an electroluminescence phenomenon, that is, a phenomenon in which light is emitted from a material (semiconductor) by application of a current or a voltage. As electrons and holes are recombined in the active layer (ie, the light emitting layer) of the semiconductor light emitting device, energy corresponding to the energy band gap of the active layer may be emitted in the form of light.

Semiconductor light emitting devices are typically manufactured by epitaxial growth of compound semiconductors. Epi recipes of such compound semiconductors are being developed in order to achieve higher luminance, but packages of semiconductor light emitting devices have some existing specifications. It continues to produce low-brightness products of specification. However, when the epi recipe is changed in the manufacturing process of the compound semiconductor, it is not easy to flexibly change the epi recipe in accordance with market needs, since it is necessary to reset all the process conditions and time to stabilize the yield. As a result, the manufacturing company of the semiconductor light emitting device maintains the existing low brightness epi recipe and the new high brightness epi recipe while simultaneously manufacturing the existing low brightness semiconductor light emitting device and the new high brightness semiconductor light emitting device. It is difficult and there is a problem of increasing the inventory of wavelength / luminance.

The present invention provides a semiconductor light emitting device and a method of manufacturing the same according to the specifications of the semiconductor light emitting device chip in the final product in the process after the epi-process while maintaining a high brightness epi recipe.

A semiconductor light emitting device according to an aspect of the present invention includes a compound semiconductor structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are stacked; And a transmittance control layer provided on the light emitting surface of the compound semiconductor structure. For example, the first semiconductor layer, the active layer, and the second semiconductor layer may be formed of a GaN-based compound semiconductor. The first semiconductor layer may be, for example, an n-type cladding layer or an n-type contact layer / n-type cladding layer, and the second semiconductor layer may be, for example, a p-type cladding layer or a p-type contact layer / p-type cladding layer. Can be.

The transmittance control layer may be a metal thin film. For example, the metal thin film may be Cr, Ti, In, or an alloy thereof.

The transmittance control layer may be formed by depositing a metal thin film and then performing heat treatment.

The permeability control layer may be formed to a thickness of 1 Å to 100 Å.

According to another aspect of the present invention, a semiconductor light emitting device may further include a growth substrate formed by sequentially stacking a first semiconductor layer, an active layer, and a second semiconductor layer, and an upper surface of the second semiconductor layer may be a light emitting surface. Can be. The growth substrate may be, for example, a sapphire substrate, a SiC substrate, a GaN substrate, a ZnO substrate, a silicon substrate, or the like. A transparent electrode may be further provided between the light emitting surface of the compound semiconductor structure and the transmittance control layer. The transparent electrode may include a transparent conductive oxide including ITO, SnO 2 and ZnO, a transparent conductive polymer, a polymer film in which carbon nanotubes are dispersed, or graphene.

The semiconductor light emitting device according to another aspect of the present invention further includes a wiring board bonded to one surface of the compound semiconductor structure to electrically connect the first and second semiconductor layers to the outside, and the other surface of the compound semiconductor structure is a light emitting surface. This can be The wiring substrate may be, for example, a conductive substrate formed of a metal such as Cu, Cr, or Ni, or may be a Si, GaAs semiconductor substrate.

According to another aspect of the present invention, a method of manufacturing a semiconductor light emitting device may include forming a compound semiconductor structure by stacking a first semiconductor layer, an active layer, and a second semiconductor layer; And forming a transmittance control layer on one surface of the compound semiconductor structure.

The transmittance control layer may be formed of a metal thin film. The metal thin film may be Cr, Ti, or an alloy thereof. After the deposition of the metal thin film is heat-treated, by controlling the temperature and time of the heat treatment it is possible to control the transmittance of the transmittance control layer.

The transmittance of the transmittance adjusting layer may be adjusted by adjusting the thickness of the transmittance adjusting layer. At this time, the thickness of the transmittance control layer can be adjusted within the range of 1Å to 100Å.

The first semiconductor layer, the active layer, and the second semiconductor layer may be sequentially stacked on the growth substrate, and a transmittance control layer may be formed on the upper surface of the second semiconductor layer. The method may further include forming a transparent electrode between the light emitting surface of the compound semiconductor structure and the transmittance control layer. In this case, the transparent electrode may include a transparent conductive oxide including ITO, SnO 2 and ZnO, a transparent conductive polymer, a polymer film in which carbon nanotubes are dispersed, or graphene.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, the method comprising: bonding a wiring board electrically connecting the first and second semiconductor layers to the outside to one surface of the compound semiconductor structure. The other surface may be a light emitting surface.

The semiconductor light emitting device according to the disclosed embodiments and a method of manufacturing the same according to the specifications of the semiconductor light emitting device chip to the desired specifications in the final product, the brightness is adjusted, while maintaining the new high brightness epi recipe to meet the market needs of existing low brightness semiconductor light emitting device And a new high-brightness semiconductor light emitting device can be manufactured at the same time, so it is easy to manage the epi recipe, and no inventory of wavelength / luminance is generated.

1 is a schematic side view of a semiconductor light emitting device according to an embodiment of the present invention.
2 is a schematic side view of a semiconductor light emitting device according to another exemplary embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to another embodiment of the present invention.
4 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation.

1 is a schematic side view of a semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 1, the semiconductor light emitting device 100 according to the present exemplary embodiment may include the first semiconductor layer 111, the active layer 113, and the first semiconductor layer 110, which is a compound semiconductor structure 110 that is sequentially stacked on the growth substrate 120. 2 semiconductor layer 115 is included. The compound semiconductor structure 110 may be stepped so that the partial region 111a of the first semiconductor layer 111 may be exposed. The first electrode 130 is provided in the exposed partial region 111a of the first semiconductor layer 111. The upper surface of the second semiconductor layer 115 becomes the light emitting surface 110a of the compound semiconductor structure 110. A transparent electrode 155 is formed on the light emitting surface 110a of the compound semiconductor structure 110, a second electrode 140 is provided on one region on the transparent electrode 155, and a second on the transparent electrode 155 is provided. The transmittance adjusting layer 150 is provided in the remaining region except for the region where the electrode 140 is formed.

The growth substrate 120 is a substrate on which the compound semiconductor structure 110 may be grown, and may be, for example, a sapphire (Al 2 O 3 ) substrate, a SiC substrate, a GaN substrate, a ZnO substrate, a silicon substrate, or the like. Although not shown, a buffer layer may be provided between the first semiconductor layer 111 and the substrate 120 to stably grow the compound semiconductor structure. Alternatively, concave or convex uneven patterns may be formed on the upper surface of the substrate 120 to mitigate lattice mismatch with the compound semiconductor structure 110 grown thereon and to increase the light extraction effect.

The compound semiconductor structure 110 may be, for example, an epi structure formed by crystal growth of a group III-V compound semiconductor such as GaN, InN, AlN, or the like.

The first semiconductor layer 111 may have n-type conductivity, and the second semiconductor layer 115 may have p-type conductivity. In some cases, n-type conductivity and p-type conductivity may be reversed. The first and second semiconductor layers 111 and 115 may have a single layer or a multilayer structure.

The light emitting surface 110a of the compound semiconductor structure 110 may have a surface uneven structure to improve light extraction efficiency.

The active layer 113 is positioned between the first semiconductor layer 111 and the second semiconductor layer 115. The active layer 113 may be formed, for example, in a multiple quantum well (MQW) structure. The multi-quantum well structure consists of a plurality of quantum well layers and a plurality of quantum barrier layers formed therebetween. As a specific example, when the compound semiconductor structure 110 is gallium nitride-based, the first semiconductor layer 111 is formed of n-type impurity doped GaN, and the second semiconductor layer 115 is formed of p-type impurity doped GaN. The active layer 113 may be formed by stacking a plurality of InGaN well layers and a plurality of GaN quantum barrier layers. Electrons and holes injected through the first semiconductor layer 111 and the second semiconductor layer 115 meet at the active layer 113 and emit light L1 to the light emitting surface 110a. The emitted light L1 is controlled through the transmittance adjusting layer 150, and finally emitted to the outside as light L2 having a controlled transmittance.

The transparent electrode 155 may be a transparent conductive oxide including ITO, SnO 2, and ZnO. Alternatively, the transparent electrode 155 may be formed of a transparent conductive polymer, a polymer film in which carbon nanotubes are dispersed, or graphene.

The first electrode 130 may be, for example, an n-type electrode when the first semiconductor 111 has n-type conductivity. For example, when the second semiconductor 115 has p-type conductivity, the second electrode 140 may be a p-type electrode.

The transmittance adjusting layer 150 is a semi-transparent layer controlling the amount of light emitted through the light emitting surface 110a of the compound semiconductor structure 110. The transmittance adjusting layer 150 may be formed of a metal thin film such as Cr, Ti, In, or an alloy thereof. The transmittance of the transmittance adjusting layer 150 may be controlled by adjusting the thickness T of the transmittance adjusting layer 150, and the thickness T of the transmittance adjusting layer 150 may be in a range of about 1 μm to about 100 μm. have. Alternatively, the transmittance of the transmittance adjusting layer 150 may be controlled by adjusting the temperature and time of annealing after forming the translucent metal thin film. Since the process of forming the transmittance control layer 150 may be added without greatly changing the process of forming the transparent electrode 155 or the process of forming the first and second electrodes 130 and 140, it may be easily formed. have.

The amount of light L1 emitted through the light emitting surface 110a of the compound semiconductor structure 110 is determined by the process conditions of crystal growth such as the compound semiconductor composition ratio of each layer constituting the compound semiconductor structure 110 (ie, epi recipe). Is largely determined by However, the epi recipe is very sensitive, and if the epi recipe is slightly changed, the actual manufacturing process of the compound semiconductor structure 110 is inevitably delayed. Therefore, controlling the amount of light L1 emitted through the light emitting surface 110a of the compound semiconductor structure 110 through the epi recipe is very disadvantageous in the manufacturing process. On the other hand, the semiconductor light emitting device 100 according to the present embodiment maintains the transmittance of the transmittance adjusting layer 150 while maintaining the amount of light L1 emitted through the light emitting surface 110a of the compound semiconductor structure 110. By adjusting, the amount of light of the finally emitted light L2 can be adjusted. Since the transmittance adjustment layer 150 is a metal deposition process that is relatively easy to control process conditions, the transmittance control through the transmittance control layer 150 is relatively easy.

2 is a schematic side view of a semiconductor light emitting device according to another exemplary embodiment of the present invention.

Referring to FIG. 2, in the semiconductor light emitting device 200 according to the present embodiment, the compound semiconductor structure 210 including the first semiconductor layer 211, the active layer 213, and the second semiconductor layer 215 may be used for electrical wiring. It is a vertical structure bonded to the wiring board 220.

The compound semiconductor structure 210 may be formed by sequentially growing the first semiconductor layer 211, the active layer 213, and the second semiconductor layer 215 through a separate growth substrate (not shown). For example, it may be formed by crystal growth of a group III-V compound semiconductor, such as GaN, InN, AlN. The growth substrate is removed after the compound semiconductor structure 210 is bonded to the wiring substrate 220. The upper surface of the first semiconductor layer 211 corresponding to the surface from which the growth substrate is removed becomes the light emitting surface 210a of the compound semiconductor structure 210. The transmittance adjusting layer 250 is provided on the light emitting surface 210a of the compound semiconductor structure 210.

The compound semiconductor structure 210 may be, for example, an epi structure formed by crystal growth of a group III-V compound semiconductor such as GaN, InN, AlN, or the like. The first semiconductor layer 211 may have n-type conductivity, and the second semiconductor layer 215 may have p-type conductivity. In some cases, n-type conductivity and p-type conductivity may be reversed. The first and second semiconductor layers 211 and 215 may have a single layer or a multilayer structure. The light emitting surface 210a of the compound semiconductor structure 210 may be processed into a surface uneven structure to improve light extraction efficiency.

The wiring substrate 220 may be a conductive substrate formed of a metal such as Cu, Cr, or Ni, or may be a Si, GaAs semiconductor substrate.

The compound semiconductor structure 210 is provided with a hole 235a to allow the first semiconductor layer 211 to be electrically wired to the wiring board 220. The hole 235a is etched into a mesa structure or a vertical structure to drill a portion of the active layer 213 and the first semiconductor layer 211 together with the second semiconductor layer 215. The first electrode 230 is a conductive material. Filled with) The first insulating layer 235 is disposed between the first electrode 230 and the hole 235a to electrically insulate the first electrode 230 from the second semiconductor layer 211. For example, when the first semiconductor 211 has n-type conductivity, the first electrode 230 may be an n-type electrode. The first electrode 230 is electrically connected to the outside through the wiring board 220. In addition, at least a portion of the second semiconductor layer 215 is in contact with the second electrode 240 provided on the upper surface of the wiring board 220, and the second electrode 240 extends to the outer side of the compound semiconductor structure 210 to be external. Is exposed. A second insulating layer 225 is interposed between the second electrode 240 and the wiring board 220 to electrically insulate the second electrode 240 from the wiring board 220. The second electrode 240 may be a p-type electrode, for example, when the second semiconductor 215 has a p-type conductivity, and may be formed of, for example, Ag, Al, an alloy thereof, or other highly reflective metal. Can be.

The transmittance control layer 250 is a translucent layer that controls the amount of light emitted through the light emitting surface 210a of the compound semiconductor structure 210. The transmittance adjusting layer 250 may be formed of a metal thin film such as Cr, Ti, In, or an alloy thereof. The transmittance of the transmittance adjusting layer 250 may be controlled by adjusting the thickness T of the transmittance adjusting layer 250, and the thickness T of the transmittance adjusting layer 250 may be in a range of about 1 μm to about 100 μm. have. Alternatively, the transmittance of the transmittance adjusting layer 250 may be controlled by adjusting the temperature and time of annealing after forming the translucent metal thin film. Electrons and holes injected through the first semiconductor layer 211 and the second semiconductor layer 215 meet at the active layer 213 and emit light L1 to the light emitting surface 210a. The emitted light L1 is controlled through the transmittance adjusting layer 250, and finally emitted to the outside as light L2 having a controlled transmittance.

3 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to another embodiment of the present invention.

Referring to FIG. 3, in the method of manufacturing a semiconductor light emitting device according to the present embodiment, first, an epitaxial layer, that is, a compound semiconductor structure is grown (S10), and power is applied to the grown compound semiconductor structure to measure luminance (S20). . Next, by comparing the brightness of the compound semiconductor structure and the brightness of the required specification, the transmittance of the transmittance control layer is determined (S30), and the transmittance control layer is formed to a thickness corresponding to the determined transmittance (S40). When the transmittance adjusting layer becomes thick, the transmittance becomes low, so that the transmittance of the transmittance adjusting layer can be adjusted by appropriately adjusting the thickness of the transmittance adjusting layer. That is, if the luminance of the compound semiconductor structure is larger than the required specification, the luminance of the semiconductor light emitting device can be lowered by appropriately setting the thickness of the transmittance adjusting layer to be formed on the compound semiconductor structure.

4 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to still another embodiment of the present invention.

Referring to FIG. 4, in the method of manufacturing a semiconductor light emitting device according to the present embodiment, first, an epitaxial layer, that is, growing a compound semiconductor structure (S10) and applying a power to the grown compound semiconductor structure to measure luminance ( S20) is the same as the above-described embodiment. Next, a transmittance control layer is formed on the compound semiconductor structure (S40 ′). Next, the transmittance of the transmittance adjusting layer is adjusted through the temperature or time of annealing of the transmittance adjusting layer so that the luminance of the semiconductor light emitting device has the required specification (S50). That is, if the luminance of the compound semiconductor structure is larger than the luminance of the required specification, the luminance of the semiconductor light emitting device can be lowered by appropriately setting the temperature and time of annealing of the formed transmittance control layer.

The semiconductor light emitting device of the present invention and a method of manufacturing the same have been described with reference to the embodiments shown in the drawings for clarity, but these are merely exemplary, and various modifications and equivalents may be made by those skilled in the art. It will be appreciated that other embodiments are possible. Accordingly, the true scope of the present invention should be determined by the appended claims.

100, 200: semiconductor light emitting device 110, 210: compound semiconductor structure
110a, 210a ... light emitting surface 111, 211: first semiconductor layer
113 and 213: active layer 115 and 215: second semiconductor layer
120: growth substrate 130, 230: first electrode
135: transparent electrode 140, 240: second electrode
150, 250: transmittance control layer 220: wiring board
225, 235: insulation layer

Claims (19)

A compound semiconductor structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are stacked; And
And a transmittance control layer provided on the light emitting surface of the compound semiconductor structure. The method according to claim 1,
The transmittance control layer is a semiconductor light emitting device. The method of claim 2,
The metal thin film is a semiconductor light emitting device of Cr, Ti, In or an alloy thereof. The method of claim 2,
The transmittance control layer is a semiconductor light emitting device formed by depositing a metal thin film and heat treatment. The method according to claim 1,
The transmittance control layer is a semiconductor light emitting device formed to a thickness of 1Å to 100Å. 6. The method according to any one of claims 1 to 5,
And a growth substrate formed by sequentially stacking the first semiconductor layer, the active layer, and the second semiconductor layer, wherein the top surface of the second semiconductor layer is a light emitting surface. The method of claim 6,
And a transparent electrode provided between the light emitting surface of the compound semiconductor structure and the transmittance control layer. The method of claim 7, wherein
The transparent electrode may include a transparent conductive oxide including ITO, SnO 2 and ZnO, a transparent conductive polymer, a polymer film in which carbon nanotubes are dispersed, or a graphene. 6. The method according to any one of claims 1 to 5,
And a wiring board bonded to one surface of the compound semiconductor structure to electrically connect the first and second semiconductor layers to the outside, wherein the other surface of the compound semiconductor structure is a light emitting surface. Stacking a first semiconductor layer, an active layer, and a second semiconductor layer to form a compound semiconductor structure; And
Forming a transmittance control layer on one surface of the compound semiconductor structure; manufacturing method of a semiconductor light emitting device comprising a. The method of claim 10,
The transmittance control layer is a manufacturing method of a semiconductor light emitting device formed of a metal thin film. 12. The method of claim 11,
The metal thin film is Cr, Ti, or an alloy thereof manufacturing method of a semiconductor light emitting device. 12. The method of claim 11,
And depositing the metal thin film and performing heat treatment, thereby controlling the transmittance of the transmittance control layer by controlling the temperature and time of the heat treatment. The method of claim 10,
The method of manufacturing a semiconductor light emitting device for controlling the transmittance of the transmittance control layer by adjusting the thickness of the transmittance control layer. 15. The method of claim 14,
The thickness of the transmittance control layer is a manufacturing method of a semiconductor light emitting device to adjust within the range of 1Å to 100Å. The method according to any one of claims 10 to 15,
And the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on a growth substrate, and the transmittance control layer is formed on an upper surface of the second semiconductor layer. 17. The method of claim 16,
And forming a transparent electrode between the light emitting surface of the compound semiconductor structure and the transmittance control layer. The method of claim 17,
The transparent electrode is a method of manufacturing a semiconductor light emitting device comprising a transparent conductive oxide containing ITO, SnO 2 and ZnO, a transparent conductive polymer, a polymer film in which carbon nanotubes are dispersed, or graphene. The method according to any one of claims 10 to 15,
Manufacturing a semiconductor light emitting device in which a wiring board electrically connecting the first and second semiconductor layers to the outside is bonded to one surface of the compound semiconductor structure, and the other surface of the compound semiconductor structure becomes a light emitting surface Way.
KR1020120013324A 2012-02-09 2012-02-09 Semiconductor light emitting device and method of manufacturing the same KR20130091950A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107958946A (en) * 2017-11-17 2018-04-24 扬州乾照光电有限公司 A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107958946A (en) * 2017-11-17 2018-04-24 扬州乾照光电有限公司 A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof

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