KR101728545B1 - Light emitting device, method for fabricating the light emitting device and light emitting device package - Google Patents

Abstract

A light emitting device according to an embodiment includes a conductive supporting member; A compound semiconductor layer formed on the conductive support member to emit light and having a concavo-convex pattern on its upper surface; And an oxide film formed to have a uniform thickness along the uneven pattern.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, a method of manufacturing the light emitting device,

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, and a light emitting device package.

Light emitting diodes (LEDs) are a type of semiconductor devices that convert electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode has been increasingly used as a light source for various lamps used in indoor / outdoor, a liquid crystal display, a display board, and a streetlight.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, and a light emitting device package having a new structure.

Embodiments provide a light emitting device with reduced leakage current and a method of manufacturing the same.

Embodiments provide a light emitting device with improved light emitting efficiency and a method of manufacturing the same.

A light emitting device according to an embodiment includes a conductive supporting member; A compound semiconductor layer formed on the conductive support member to emit light and having a concavo-convex pattern on its upper surface; And an oxide film formed to have a uniform thickness along the uneven pattern.

A method of manufacturing a light emitting device according to an embodiment includes forming a compound semiconductor layer; Forming a conductive support member on the compound semiconductor layer; Forming a concavo-convex pattern by patterning the compound semiconductor layer; And forming an oxide film so as to have a uniform thickness along the concavo-convex pattern.

A light emitting device package according to an embodiment includes a body; A first electrode and a second electrode provided on the body; And a light emitting element provided on the body and electrically connected to the first electrode and the second electrode, wherein the light emitting element is formed on the conductive supporting member and emits light, And an oxide film formed to have a uniform thickness along the concavo-convex pattern.

Embodiments can provide a light emitting device, a light emitting device manufacturing method, and a light emitting device package having a new structure.

Embodiments can provide a light emitting device with reduced leakage current and a method of manufacturing the same.

Embodiments can provide a light emitting device with improved light emitting efficiency and a method of manufacturing the same.

1 is a sectional view of a light emitting device according to the first embodiment
Fig. 2 is a top view of the light emitting device of Fig. 1
3 is an enlarged view of a region A in Fig.
4 is a view showing another example of the area A in Fig. 1
5 to 11 are views for explaining a method of manufacturing the light emitting device according to the first embodiment;
12 is a cross-sectional view of the light emitting device according to the second embodiment
13 is a cross-sectional view of the light emitting device according to the third embodiment
14 is a cross-sectional view of the light emitting device according to the fourth embodiment
15 is a cross-sectional view of the light emitting device according to the fifth embodiment
16 is a cross-sectional view of the light emitting device package including the light emitting device according to the embodiment

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, and a light emitting device package according to embodiments will be described with reference to the accompanying drawings.

1 is a cross-sectional view of the light emitting device 100 according to the first embodiment. FIG. 2 is a top view of the light emitting device 100 of FIG. 1. FIG. 3 is an enlarged view of region A of FIG. 1 is a diagram showing another example of the area A in Fig.

1 to 3, the light emitting device 100 according to the first embodiment includes a conductive support member 160, a conductive support member 160 formed on the conductive support member 160 to generate light, An oxide film 138 formed to have a uniform thickness along the concavo-convex pattern 135, and an electrode pad 170 on the compound semiconductor layer 145 can do.

According to an embodiment, the oxide layer 138 may be formed along the uneven pattern 135. The concavo-convex pattern 135 prevents the top surface of the compound semiconductor layer 145 from being exposed, thereby preventing leakage current and improving the light extraction efficiency of the light emitting device 100.

In addition, since the oxide film 138 can be formed with a relatively uniform thickness and its thickness can be easily controlled by the manufacturing process, the light emitting device according to the embodiment 100) can be produced.

Even if the electrode pad 140 is formed directly on the oxide film 138 without removing the oxide film 138 because the oxide film 138 is formed to have a thin thickness of 1 to 1000 angstroms for example, The operating voltage of the device 100 is not significantly reduced. Accordingly, not only the manufacturing process of the light emitting device 100 is facilitated, but also the leakage current that may be generated by removing the oxide film 138 can be prevented.

Hereinafter, the light emitting device 100 according to the first embodiment will be described in detail with respect to each component.

The conductive support member 160 supports the light emitting device 100 and provides power to the compound semiconductor layer 145 together with the electrode pad 170.

The conductive support member 160 may be formed of a material selected from the group consisting of Ti, Cr, Ni, Al, Pt, Au, W, Mo) or a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, SiGe, GaN or the like).

At least one of the reflective layer 158 and the ohmic layer 157 may be formed on the conductive supporting member 160. That is, the reflective layer 158 and the ohmic layer 157 may be formed between the conductive support member 160 and the compound semiconductor layer 145.

The reflective layer 158 may be formed to enhance light extraction efficiency by reflecting light emitted from the compound semiconductor layer 145. For example, the reflective layer 158 may be formed of a metal or an alloy including at least one of silver (Ag), aluminum (Al), palladium (Pd), and platinum (Pt).

The ohmic layer 157 may be formed for ohmic contact between the compound semiconductor layer 145 and the conductive support member 160. For example, the ohmic layer 157 may include at least one of ITO, ZnO, Ni, Pt, Ir, Rh, and Ag.

Meanwhile, when the reflective layer 158 makes ohmic contact with the compound semiconductor layer 145, the ohmic layer 157 may not be formed.

The compound semiconductor layer 145 may be formed on one of the conductive support member 160, the reflective layer 158, and the ohmic layer 157.

For example, the compound semiconductor layer 145 may include a plurality of layers, for example, a first semiconductor layer 130, an active layer 140 under the first semiconductor layer 130, The second conductive semiconductor layer 150 may be formed on the second conductive semiconductor layer 150.

The first semiconductor layer 130 may include only the first conductive semiconductor layer, or may include an unshown semiconductor layer or the like on the first conductive semiconductor layer, but the present invention is not limited thereto.

The first conductive semiconductor layer, for example, may comprise n-type semiconductor layer, the n-type semiconductor layer is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤ For example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN and the like, and an n-type dopant such as Si, Ge or Sn Lt; / RTI >

The non-conductive semiconductor layer is a layer which is not doped with a conductive dopant and has a significantly lower electrical conductivity than the first conductive semiconductor layer or the second conductive semiconductor layer 150, Is a layer which is grown to improve the crystallinity of the film.

The active layer 140 may be formed under the first semiconductor layer 130. The active layer 140 is formed on the active layer 140. The active layer 140 is formed by injecting electrons (or holes) injected through the first semiconductor layer 130 and holes (or electrons) injected through the second conductive type semiconductor layer 150 And emits light according to a band gap difference of an energy band according to the formation material of the active layer 140. [

The active layer 140 may be formed of any one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, and a quantum well structure. However, the present invention is not limited thereto.

The active layer 140 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1). When the active layer 140 is formed of the multiple quantum well structure, the active layer 140 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the InGaN well layer / GaN barrier layer / RTI >

A cladding layer (not shown) doped with an n-type or p-type dopant may be formed on and / or below the active layer 140. The cladding layer (not shown) may be formed of an AlGaN layer or an InAlGaN layer have.

The second conductive semiconductor layer 150 may be formed under the active layer 140. The second conductive semiconductor layer 150 may be formed of, for example, a p-type semiconductor layer, and the p-type semiconductor layer may include In _x Al _y Ga _{1 -x- y} N (0? Mg, Zn, Ca, Sr, In, Al, and InN may be selected from InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, A p-type dopant such as Ba can be doped.

The first semiconductor layer 130 may include a p-type semiconductor layer, and the second conductive semiconductor layer 150 may include an n-type semiconductor layer. A third conductive semiconductor layer (not shown) including an n-type or p-type semiconductor layer may be formed on the first semiconductor layer 130. The light emitting device 100 may include np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the conductive dopants in the first conductive semiconductor layer 150 and the second conductive semiconductor layer 150 may be uniform or non-uniform. That is, the structure of the compound semiconductor layer 145 may be variously formed, but is not limited thereto.

The concave-convex pattern 135 may be formed on the top surface of the first semiconductor layer 130 of the compound semiconductor layer 145.

The concave-convex pattern 135 may be formed by patterning the upper surface of the first semiconductor layer 130.

The concave-convex pattern 135 may have a width d1 and an interval d3 of, for example, 1 nm to 100 nm. That is, the concavo-convex pattern 135 may include a concave pattern and a convex pattern, and the width d1 of each of the concave pattern and the convex pattern may be 1 nm to 100 nm , And the interval d3 between adjacent concave patterns and the interval d3 between adjacent convex patterns may be 1 nm to 100 nm, respectively.

The concavo-convex pattern 135 may have a shape of a cylinder or a polygonal column as shown in FIG. 3 or a truncated cone having an upper portion of a cone as shown in FIG. 4, a truncated pyramid cut at the top of a polygonal pyramid , But is not limited thereto.

The oxide layer 138 may be formed on the upper surface of the compound semiconductor layer 145, that is, along the concavo-convex pattern 135.

The oxide film 138 may be formed to include at least one of electrically insulating material, for example, AlO _x , Al ₂ O ₃ , GaO _x , Ga ₂ O ₃ , and InO _x .

By forming the oxide layer 138 according to the embodiment, it is possible to prevent light loss due to a leakage current that may occur due to the exposure of the top surface of the compound semiconductor layer 145 and to improve the light extraction efficiency of the light emitting device 100 .

In general, when an oxide film is formed on a compound semiconductor layer, a deposition method such as PECVD (plasma enhanced chemical vapor deposition), sputtering, or electron beam (E-beam) deposition is used. It is difficult to form an oxide film along the concavo-convex pattern 135 having a fine width and an interval of 1 nm to 100 nm, and even if an oxide film is formed, a region in which the compound semiconductor layer is exposed may occur, resulting in generation of a leakage current.

Therefore, in the embodiment, the light emitting device 100 is immersed in a solvent S containing oxygen (O ₂ ), and a bias voltage is applied to the solvent S to form the oxide film 138.

That is, the oxide film 138 according to the embodiment may be formed of a material such as gallium (Ga), aluminum (Al), indium (In), or the like located on the surface of the compound semiconductor layer 145, O ₂ ).

The oxide film 138 may be formed to have a relatively uniform thickness d2 of approximately 1 to 1000 angstroms on the side and top surfaces of the concavo-convex pattern 135, And can be easily controlled by adjusting the immersing time and the like. Thus, the oxide film 138 can be manufactured to have a thickness d2 for obtaining an optimum light extraction effect.

In addition, since the oxide film 138 can be easily formed, the efficiency of the manufacturing process of the light emitting device 100 can be improved, and the oxide film 138 can not be formed, The occurrence of leakage current can be minimized.

Since the oxide layer 138 is formed to have a relatively small thickness d2 of about 1 to 1000 angstroms, the oxide layer 138 can be formed directly on the oxide layer 138 without removing the oxide layer 138 The operation voltage of the light emitting device 100 is not significantly reduced. Accordingly, not only the manufacturing process of the light emitting device 100 is facilitated, but also the leakage current that may be generated by removing the oxide film 138 can be prevented.

The oxide layer 138 formed by oxidizing the compound semiconductor layer 145 and containing at least one of AlO _x , Al ₂ O ₃ , GaO _x , Ga ₂ O ₃ , and InO _x is formed on the compound semiconductor layer 145 (For example, 1.5 to 2.0), the light generated in the compound semiconductor layer 145 can be effectively radiated to the outside due to the refractive index difference.

The electrode pad 170 may be formed on the compound semiconductor layer 145. At this time, the electrode pad 170 may be formed directly on the oxide layer 138 or may be formed by selectively removing the oxide layer 138, but the present invention is not limited thereto.

The electrode pad 170 provides power to the compound semiconductor layer 145 together with the conductive support member 160 and may be formed of a conductive material such as aluminum (Al), titanium (Ti), chromium (Cr), nickel Ni), copper (Cu), and gold (Au).

Hereinafter, a method of manufacturing the light emitting device 100 according to the first embodiment will be described in detail. However, the contents overlapping with those described above will be omitted or briefly explained.

5 to 11 are views for explaining a method of manufacturing the light emitting device 100 according to the first embodiment.

Referring to FIG. 5, the compound semiconductor layer 145 may be formed on the growth substrate 110.

The growth substrate 110 may be formed of at least one of, for example, sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

The compound semiconductor layer 145 may be formed by successively growing the first semiconductor layer 130, the active layer 140, and the second conductivity type semiconductor layer 150 on the growth substrate 110.

For example, the compound semiconductor layer 145 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, Molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE), but the present invention is not limited thereto.

Referring to FIG. 6, the ohmic layer 157, the reflective layer 158, and the conductive support member 160 may be sequentially formed on the compound semiconductor layer 145.

The ohmic layer 157 and the reflective layer 158 may be formed by a deposition method such as plasma enhanced chemical vapor deposition (PECVD), sputtering, electron beam (E-beam) deposition, or the like, Or may be formed by a plating method.

At least one of the ohmic layer 157 and the reflective layer 158 may be formed or may not be formed.

The conductive support member 160 may be formed by a deposition or plating method or may be formed by preparing the conductive support member 160 as a separate sheet and attaching the conductive support member 160 by a bonding method.

When the conductive support member 160 is formed by a bonding method, a separate adhesive layer (not shown) is formed between the conductive support member 160 and the compound semiconductor layer 145 to improve the bonding strength between the conductive support member 160 and the compound semiconductor layer 145 .

Referring to FIG. 7, the growth substrate 110 may be removed.

The growth substrate 110 may be removed using, for example, at least one of a laser lift off (LLO) process and an etching process, but is not limited thereto.

As the growth substrate 110 is removed, the lower surface of the first semiconductor layer 130 of the compound semiconductor layer 145 is exposed.

Referring to FIG. 8, the uneven pattern 135 may be formed by patterning the exposed first semiconductor layer 130. On the other hand, for convenience of explanation, the light emitting element of Fig.

The patterning process may be, for example, a lithography process, including a photolithography process. According to the photolithography process, first, a mask pattern having a pattern corresponding to the uneven pattern 135 is formed, and then etching is performed along the mask pattern to provide the uneven pattern 135 . However, the present invention is not limited thereto.

In the embodiment, the concave-convex pattern 135 having a width and an interval of 1 nm to 100 nm can be easily formed by the lithography process which can effectively form a fine pattern.

9 and 10, the light emitting device B of FIG. 8 is immersed in a solvent (S) of apolar or low polarity containing oxygen (O ₂ ), and a bias voltage is applied to the solvent (S) The oxide film 138 can be formed along the concavo-convex pattern 135.

The solvent (S) containing oxygen (O ₂ ) may include, for example, distilled water (H ₂ O), but is not limited thereto.

When a bias voltage is applied to the solvent S containing oxygen (O ₂ ) as in the embodiment, gallium (Ga), aluminum (Al), indium in) becomes such a chemically combining with oxygen atoms (O) contained in the solvent (S) forming the AlO _x, Al ₂ O _3, GaO _x, Ga ₂ O _3, InO _x or the like, the oxide film 138, Can be formed.

At this time, the bias voltage may preferably have a magnitude of 0V to 30V. If the bias voltage exceeds 30 V, the oxide film 138 may be formed in a large particle unit, so that a leakage current may be generated as a gap between the particles, and the concave / convex pattern 135 may be damaged Because.

Referring to FIG. 11, the electrode pad 170 may be formed on the compound semiconductor layer 145 to provide the light emitting device 100 according to the first embodiment.

The electrode pad 170 may be formed directly on the oxide layer 138 or may be formed directly on the compound semiconductor layer 145 after the compound semiconductor layer 145 is selectively removed, .

However, since the oxide film 138 has a thickness of 1 to 1000 angstroms, the operation voltage of the light emitting device 100 is not significantly reduced without removing the oxide film 138.

Hereinafter, the light emitting device 100A according to the second embodiment will be described in detail. However, in the description of the second embodiment, the description overlapping with the first embodiment is omitted or briefly described, and only differences between the two embodiments will be described in detail.

12 is a sectional view of a light emitting device 100A according to the second embodiment.

12, the light emitting device 100A according to the second embodiment includes a conductive supporting member 160, a reflective layer 158 on the conductive supporting member 160, and a reflective layer 158 on the reflective layer 158. [ A compound semiconductor layer 145 formed on the ohmic layer 157 to generate light and including a first concavo-convex pattern 135 on an upper surface thereof; An oxide film 138 formed to have a uniform thickness, and an electrode pad 170 on the compound semiconductor layer 145. The interface between the compound semiconductor layer 145 and the ohmic layer 157 may be formed by a concave-convex structure 156.

The light emitting device 100A according to the second embodiment has the same structure as the light emitting device according to the first embodiment except that the concave and convex structure 156 is included at the interface between the reflective layer 158 and the ohmic layer 157 100).

The concave and convex structure 156 may be formed by forming the concave and convex structure 156 on the second conductivity type semiconductor layer 150 after forming the second conductivity type semiconductor layer 150 of the compound semiconductor layer 145, And then forming the ohmic layer 157 on the patterned second conductive type semiconductor layer 150. In this case, However, the present invention is not limited thereto.

The concave and convex structure 156 may improve light extraction efficiency of the light emitting device 100A by totally reflecting light incident from the compound semiconductor layer 145 or transmitting the light through the reflective layer 158 by changing the incident angle.

Hereinafter, the light emitting device 100B according to the third embodiment will be described in detail. However, in the description of the third embodiment, the description overlapping with the first embodiment will be omitted or briefly described, and only differences between the two embodiments will be described in detail.

13 is a sectional view of a light emitting device 100B according to the third embodiment.

Referring to FIG. 13, the light emitting device 100B according to the third embodiment includes a conductive supporting member 160, a reflective layer 158 on the conductive supporting member 160, and a reflective layer 158 on the reflective layer 158, A compound semiconductor layer 145 formed on the ohmic layer 157 to generate light and including a first concavo-convex pattern 135 on an upper surface thereof; An oxide film 138 formed to have a uniform thickness, and an electrode pad 170 on the compound semiconductor layer 145. In addition, the interface between the reflective layer 158 and the ohmic layer 157 may be formed to have a concave-convex structure 156b.

The light emitting device 100B according to the third embodiment differs from the light emitting device 100 according to the first embodiment except that the interface between the reflective layer 158 and the ohmic layer 157 is formed by the concave- ).

The convex-concave structure 156b may be formed by, for example, forming the ohmic layer 157 flat, patterning the ohmic layer 157 corresponding to the concave-convex structure 156b, 158 as shown in FIG. However, it is not limited thereto

The concave and convex structure 156b can improve light extraction efficiency of the light emitting device 100B by reflecting light incident from the compound semiconductor layer 145 at various angles.

Hereinafter, the light emitting device 100C according to the fourth embodiment will be described in detail. However, in the description of the fourth embodiment, the description overlapping with the first embodiment is omitted or briefly described, and only differences between the two embodiments will be described in detail.

14 is a sectional view of a light emitting device 100C according to the fourth embodiment.

14, the light emitting device 100C according to the fourth embodiment includes a conductive supporting member 160, a reflective layer 158 on the conductive supporting member 160, and a reflective layer 158 on the reflective layer 158, A compound semiconductor layer 145 formed on the ohmic layer 157 to generate light and having a first concavo-convex pattern 135 on the upper surface thereof; An oxide film 138b formed to have a uniform thickness along the first irregular pattern 135 and an electrode pad 170 on the compound semiconductor layer 145. [

The light emitting device 100C according to the fourth embodiment is the same as the light emitting device 100 according to the first embodiment except that the oxide film 138b is formed on the side surface of the compound semiconductor layer 145. [

In order to form the oxide film 138b on the side surface of the compound semiconductor layer 145, isolation etching is performed on the compound semiconductor layer 145 before the oxide film 138b is formed.

That is, an isolation etching for dividing a plurality of light emitting devices into individual device units is performed along the chip boundary region I so that the side surface of the compound semiconductor layer 145 is exposed, and then the light emitting device, The sidewall of the compound semiconductor layer 145 and the oxide film 138b formed along the first concavo-convex pattern 135 by immersing in a solvent S containing oxygen (O ₂ ) The device 100C can be provided.

Hereinafter, the light emitting device 200 according to the fifth embodiment will be described in detail. However, in the description of the fifth embodiment, the description overlapping with the first embodiment is omitted or briefly described, and only differences between the two embodiments will be described in detail.

15 is a sectional view of a light emitting device 200 according to a fifth embodiment.

15, the light emitting device 200 according to the fifth embodiment includes a growth substrate 110, a first semiconductor layer 130, an active layer 140, and a second conductivity type A compound semiconductor layer 145 which is formed by successively stacking a semiconductor layer 150 and has a concavo-convex pattern 255 on an upper surface thereof, and a compound semiconductor layer 145 which is uniformly formed along the side surfaces of the concavo-convex pattern 255 and the compound semiconductor layer 145 A first electrode pad 231 on the first semiconductor layer 130 and a second electrode pad 261 on the second conductivity type semiconductor layer 150. The oxide layer 258 is formed to have a predetermined thickness, .

The light emitting device 200 according to the fifth embodiment is a light emitting device having a lateral electrode structure and is formed by mesa etching such that the first semiconductor layer 130 is exposed to the light emitting device of FIG. The uneven pattern 255 is formed on the upper surfaces of the first semiconductor layer 130 and the second conductive semiconductor layer 150 and the uneven pattern 255 and the side surfaces of the compound semiconductor layer 145 And forming the oxide film 258 along the oxide film 258.

≪ Light emitting device package &

16 is a cross-sectional view of a light emitting device package including the light emitting device according to the embodiment.

16, a light emitting device package according to an embodiment includes a body 20, a first electrode 31 and a second electrode 32 provided on the body 20, And a molding member 40 surrounding the light emitting device 100. The light emitting device 100 includes a first electrode 31 and a second electrode 32 that are electrically connected to the first electrode 31 and the second electrode 32, .

The body portion 20 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The first electrode 31 and the second electrode 32 are electrically isolated from each other and provide power to the light emitting device 100. The first electrode 31 and the second electrode 32 may increase the light efficiency by reflecting the light generated from the light emitting device 100, As shown in FIG.

The light emitting device 100 may be mounted on the body 20 or may be mounted on the first electrode 31 or the second electrode 32.

The light emitting device 100 may be electrically connected to the first electrode 31 and the second electrode 32 by wire, flip chip, or die bonding.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

At least one lens may be formed on the molding member 40 or the body 20, and the lens may include a convex lens, a concave lens, or a lens having a concave and convex structure.

The light emitting device according to the embodiment (s) may be packaged on a board or mounted on a light emitting device package, and used as a light source for a pointing device, a lighting device, a display device and the like. The light emitting device or the light emitting device package according to the embodiment can be applied to a light unit as a light source. The light unit includes a structure in which a plurality of light emitting device packages are arrayed, and can be used as a light source of a side view type or a top view type, and the light source can provide backlight light to the display panel. Further, the light emitting device or the light emitting device package may be applied to a light source of a lighting device, and the lighting device may include an illumination lamp, a signal lamp, a vehicle headlight, an electric signboard, and the like.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

The present invention relates to a semiconductor light emitting device, and more particularly,

Claims (20)

Conductive support members;
A compound semiconductor layer that emits light on the conductive supporting member and includes a concavo-convex pattern on an upper surface thereof;
A reflective layer disposed between the compound semiconductor layer and the conductive supporting member; And
And an oxide film disposed at a uniform thickness along the concavo-convex pattern,
Wherein the compound semiconductor layer includes a first semiconductor layer, an active layer below the first semiconductor layer, and a second conductive type semiconductor layer between the active layer and the conductive supporting member,
Wherein the concavo-convex pattern is disposed on an upper surface of the first semiconductor layer,
The oxide film disposed on the concavo-convex pattern has electric insulation,
Wherein the first semiconductor layer includes a first conductivity type semiconductor layer,
Wherein the first conductive semiconductor layer includes an n-type semiconductor layer,
Wherein the second conductive semiconductor layer includes a p-type semiconductor layer,
Wherein the oxide film is formed by oxidizing the surface of the compound semiconductor layer. The method according to claim 1,
Wherein the concavo-convex pattern is disposed on an upper surface of the first conductivity type semiconductor layer,
Wherein the first conductive semiconductor layer includes a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y?
Wherein the oxide film is formed of a material having at least one of gallium (Ga), aluminum (Al), and indium (In) elements located on the surface of the compound semiconductor layer. 3. The method according to claim 1 or 2,
The compound semiconductor layer is _{In x Al y Ga 1-xy} N wherein the oxide layer comprises a semiconductor having a composition formula of (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) is AlO _x, Al ₂ O ₃ , GaO _x , Ga ₂ O ₃ , and InO _x . 3. The method according to claim 1 or 2,
The width of each of the yaw pattern or the iron pattern in the uneven pattern is in the range of 1 nm to 100 nm,
Wherein a distance between adjacent yore patterns in the uneven pattern and a distance between adjacent iron patterns is in a range of 1 nm to 100 nm. 3. The method according to claim 1 or 2,
Wherein the iron pattern of the concave-convex pattern has a shape of a cylinder, a polygonal column, a truncated cone, or a truncated pyramid. 3. The method according to claim 1 or 2,
Wherein the oxide film has a thickness of 1 to 1000 ANGSTROM. 3. The method according to claim 1 or 2,
Wherein the refractive index of the oxide film is smaller than the refractive index of the compound semiconductor layer. 3. The method according to claim 1 or 2,
Wherein the oxide film is formed to have a uniform thickness on the top and side surfaces of the concavo-convex pattern. 3. The method according to claim 1 or 2,
And an electrode pad on the compound semiconductor layer. 10. The method of claim 9,
Wherein the electrode pad is formed directly on the oxide film. 3. The method according to claim 1 or 2,
Wherein the oxide film is further formed on a side surface of the compound semiconductor layer. 3. The method according to claim 1 or 2,
And an ohmic layer between the compound semiconductor layer and the reflective layer. 13. The method of claim 12,
And the interface between the compound semiconductor layer and the ohmic layer or between the reflective layer and the ohmic layer has a concavo-convex structure. delete Forming a compound semiconductor layer having a first semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
Forming a conductive support member on the compound semiconductor layer;
Forming an uneven pattern on the compound semiconductor layer; And
And forming an oxide film so as to have a uniform thickness along the concavo-convex pattern,
Wherein the concavo-convex pattern is disposed on an upper surface of the first semiconductor layer,
The oxide film is formed of an electrically insulating material,
Wherein the compound semiconductor layer includes a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y?
Wherein the oxide film is bonded to at least one of gallium (Ga), aluminum (Al), and indium (In) elements located on the surface of the compound semiconductor layer. 16. The method of claim 15,
Wherein,
Wherein the compound semiconductor layer is formed by immersing the compound semiconductor layer in a solvent containing oxygen and applying a bias voltage to the solvent. 17. The method of claim 16,
Wherein the bias voltage has a magnitude of more than 0 V and not more than 30 V. 17. The method of claim 16,
Wherein the oxygen-containing solvent comprises distilled water (H ₂ O). 17. The method according to claim 15 or 16,
The oxide film has a thickness of 1 to 1000 angstroms,
The width of each of the yaw pattern or the iron pattern in the uneven pattern has a range of 1 nm to 100 nm,
The spacing between adjacent yaw patterns in the uneven pattern and the spacing between adjacent iron patterns is in the range of 1 nm to 100 nm,
Wherein the oxide film is formed along side surfaces of the compound semiconductor layer and the concavo-convex pattern. Body;
A first electrode and a second electrode provided on the body; And
And a light emitting element provided on the body and electrically connected to the first electrode and the second electrode,
Wherein the light emitting device is the light emitting device according to claim 1 or claim 2.

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