CN104617196B - A kind of light emitting diode and its manufacture method - Google Patents
A kind of light emitting diode and its manufacture method Download PDFInfo
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- CN104617196B CN104617196B CN201510047727.XA CN201510047727A CN104617196B CN 104617196 B CN104617196 B CN 104617196B CN 201510047727 A CN201510047727 A CN 201510047727A CN 104617196 B CN104617196 B CN 104617196B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
The invention discloses a kind of light emitting diode and its manufacture method, belong to technical field of semiconductors.The light emitting diode includes permanent substrate and the tack coat, the first insulating barrier, spiral coil, the second insulating barrier, metallic reflector, P-type layer, luminescent layer, N-type layer and the N-type electrode that are sequentially formed on permanent substrate, the center line of spiral coil is parallel with the formation direction of each layer of light emitting diode, one end of spiral coil is connected through the second insulating barrier with metallic reflector, the other end of spiral coil is connected through the first insulating barrier with tack coat, and tack coat and permanent substrate are made of non-insulating material.The present invention passes through one magnetic field of spiral coil formation, the electronics of N-type layer is deflected towards the side on N-type layer periphery, so that the electronics of N-type layer is evenly distributed on the side on N-type layer periphery in the presence of Lorentz force, the electric current disperseed in N-type layer, with reference to LED chip electrode design, LED luminous efficiency is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of light emitting diode and its manufacture method.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of light emitting semiconductor device, is used extensively
In indicator lamp, display screen etc..White light LEDs are the third generation electric light sources after incandescent lamp and fluorescent lamp, and the energy consumption of white light LEDs is only
For 1/8th of incandescent lamp, 1/2nd of fluorescent lamp, the life-span is 100,000 hours, is for average family illumination
" putting things right once and for all ".
Existing LED includes substrate and the epitaxial layer being layered on substrate, and epitaxial layer includes the N being sequentially laminated on substrate
The groove that N-type layer is extended to from P-type layer is offered on type layer, luminescent layer, P-type layer, epitaxial layer, P-type layer is provided with P-type electrode, N
Type layer is provided with N-type electrode.
During the present invention is realized, inventor has found that prior art at least has problems with：
Epitaxial layer is semiconductor, and P-type electrode and N-type electrode are generally conductor, the carrier of conductor (including electronics and sky
Cave) mobility is much larger than semiconductor, in order to disperse the electric current in epitaxial layer so that the carrier in epitaxial layer is uniformly distributed, leads to
P-type electrode and/or N-type electrode often are designed as including one close to the contact on epitaxial layer periphery and at least one and contact electricity
The bar shaped section of connection, the bar shaped section of an electrode (P-type electrode or N-type electrode) stretches out and court from the contact of the electrode
To the contact of another electrode.Because electrode (P-type electrode and N-type electrode) employs light absorbent, bar-shaped zone is being added
In the case of current expansion, the light that epitaxial layer is sent also is absorbed simultaneously, LED luminous efficiency is reduced.
The content of the invention
Asking for LED luminous efficiencies is reduced due to the light that bar-shaped zone absorption epitaxial layer is sent in order to solve prior art
Topic, the embodiments of the invention provide a kind of light emitting diode and its manufacture method.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of light emitting diode, the light emitting diode include permanent substrate, with
And it is sequentially formed at tack coat on the permanent substrate, the first insulating barrier, spiral coil, the second insulating barrier, metallic reflection
Layer, P-type layer, luminescent layer, N-type layer and N-type electrode, the shape of the center line of the spiral coil and each layer of the light emitting diode
Parallel into direction, one end of the spiral coil is connected through second insulating barrier with the metallic reflector, the spiral shell
The other end of rotation shape coil is connected through first insulating barrier with the tack coat, and the tack coat and the permanent substrate are equal
It is made of non-insulating material, the N-type electrode includes contact and the bar shaped section electrically connected with the contact, described to connect
Point is set close to a side on the periphery of the N-type layer, and the bar shaped section is close to the periphery of the N-type layer and the contact
The adjacent side in residing side is set.
Alternatively, the spiral coil uses the one or more in Au, Al, Cu, Ag, Fe, Ti to be made.
Alternatively, the height of the spiral coil is 1-10 microns.
Alternatively, first insulating barrier uses SiO2Or SiNxIt is made, second insulating barrier uses SiO2Or
SiNxIt is made.
Alternatively, the thickness of first insulating barrier is 1-10 microns, and the thickness of second insulating barrier is 1-10 microns.
On the other hand, the embodiments of the invention provide a kind of manufacture method of light emitting diode, the manufacture method includes：
Grow N-type layer, luminescent layer, P-type layer successively on temporary base, form epitaxial layer；
Metallic reflector is formed in the P-type layer；
Formed on the metallic reflector in the second insulating barrier, second insulating barrier provided with one along described luminous two
The through hole in the formation direction of each layer of pole pipe；
Spiral coil, the center line of the spiral coil and the light-emitting diodes are formed on second insulating barrier
The formation direction for managing each layer is parallel, and one end of the spiral coil passes through through hole and the metal in second insulating barrier
Reflecting layer is connected；
Formed on the spiral coil in the first insulating barrier, first insulating barrier provided with one along described luminous two
Through hole in the through hole in the formation direction of each layer of pole pipe, first insulating barrier leads to the other end of the spiral coil；
Permanent substrate is sticked on first insulating barrier by tack coat, the tack coat insulate through described first
Through hole in layer is connected with the other end of the spiral coil, and the tack coat and the permanent substrate use nonisulated material
Material is made；
The epitaxial layer is inverted, the temporary base is removed；
N-type electrode is set in the N-type layer；
The N-type electrode includes contact and the bar shaped section electrically connected with the contact, and the contact is close to the N
One side on the periphery of type layer is set, and the bar shaped section is close to the periphery of the N-type layer and the side residing for the contact
Adjacent side is set.
Alternatively, it is described to form spiral coil on second insulating barrier, including：
One layer of photoresist is covered on second insulating barrier；
In the case where spiral photolithography plate blocks photoresist, photoresist is exposed；
Photoresist after exposure is corroded using developing solution, spiral photoresist is removed；
Layer of metal film is deposited using electron gun；
The metal film on remaining photoresist and photoresist is peeled off, spiral coil is formed.
Alternatively, the spiral coil uses the one or more in Au, Al, Cu, Ag, Fe, Ti to be made.
Alternatively, the height of the spiral coil is 1-10 microns.
Alternatively, first insulating barrier uses SiO2Or SiNxIt is made, second insulating barrier uses SiO2Or
SiNxIt is made.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By setting spiral coil between permanent substrate and metallic reflector, the center line of spiral coil is with lighting
The formation direction of each layer of diode is parallel, when light emitting diode is powered, and a magnetic field is formed in spiral coil, according to Hall
Effect, the electronics of N-type layer is deflected by Lorentz force towards the side on N-type layer periphery so that the electronics of N-type layer is in Lorentz
The side on N-type layer periphery is evenly distributed in the presence of power, the electric current disperseed in N-type layer promotes the extension of electric current, LED
Chip is easier to light, moreover, N-type electrode can reduce the bar shaped section set to extend electric current, reduces electrode and adopts
The use of light absorbent, and then the absorption for the light that N-type electrode is sent to luminescent layer is reduced, set with reference to LED core plate electrode
Meter, improves LED luminous efficiency.Meanwhile, P-type electrode is contacted with metallic reflector, the hole current favorable expandability of P-type layer,
Metallic reflector reflects away the light that luminescent layer is sent simultaneously, further increases LED luminous efficiency.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation for light emitting diode that the embodiment of the present invention one is provided；
Fig. 2 is the top view for the spiral coil that the embodiment of the present invention one is provided；
Fig. 3 is the stress diagram of the electronics for the N-type layer that the embodiment of the present invention one is provided；
Fig. 4 is the schematic diagram for the N-type electrode that the embodiment of the present invention one is provided；
Fig. 5 is a kind of flow chart of the manufacture method for light emitting diode that the embodiment of the present invention two is provided；
Fig. 6 a- Fig. 6 h be the embodiment of the present invention two provide manufacture light emitting diode during light emitting diode structure
Schematic diagram.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of light emitting diode, referring to Fig. 1, the light emitting diode include permanent substrate 1, with
And it is sequentially formed at tack coat 2 on permanent substrate 1, the first insulating barrier 3, spiral coil 4, the second insulating barrier 5, metallic reflection
Layer 6, P-type layer 7, luminescent layer 8, N-type layer 9 and N-type electrode 10.
Wherein, the center line of spiral coil 4 is parallel with the formation direction of each layer of light emitting diode, spiral coil 4
One end is connected through the second insulating barrier 5 with metallic reflector 6, and the other end of spiral coil 4 passes through the first insulating barrier 3 with bonding
Layer 2 is connected.Tack coat 2 and permanent substrate 1 are made of non-insulating material.
In the specific implementation, on the one hand (such as general centre position) is provided with a shape along each layers of LED in the second insulating barrier 5
Into the through hole in direction, on the other hand, spiral coil 4 and metallic reflector 6 are made of electron gun vapour deposition method, therefore are held very much
Easily the through hole in the second insulating barrier 5 is passed through to be connected with metallic reflector 6 one end of spiral coil 4.
Specifically, when forming spiral coil 4, one layer of photoresist first is covered in the second insulating barrier, spiral shape light is recycled
It is mechanical to be exposed, remove the photoresist in spiral region followed by developing solution, then carry out electron gun and be deposited one layer
Metal film, is finally peeled away the metal film on remaining photoresist and photoresist, you can form spiral coil, the thickness of metal film
The as height of spiral coil.
Similarly, on the one hand it also is provided with a formation side along each layers of LED (as close to peripheral position) in the first insulating barrier 3
To through hole, on the other hand, adhesive layer 2 is also to be made of electron gun vapour deposition method, therefore is easy to the another of spiral coil 4
One end passes through the through hole in the first insulating barrier 3 to be connected with tack coat 2.
In a kind of implementation of the present embodiment, spiral coil 4 can use one in Au, Al, Cu, Ag, Fe, Ti
Kind or a variety of be made.
Alternatively, the height of spiral coil 4 can be 1-10 microns.
In another implementation of the present embodiment, the first insulating barrier 3 can use SiO2Or SiNxIt is made, second
Insulating barrier 5 can use SiO2Or SiNxIt is made.
Alternatively, the thickness of the first insulating barrier 3 can be 1-10 microns, and the thickness of the second insulating barrier 5 can be micro- for 1-10
Rice.
In another implementation of the present embodiment, metallic reflector 6 can use ITO/Ag, Ag, Al, Au, Pt, Rh
In one or more be made.Be readily apparent that, when metallic reflector 6 using previous materials be made when, on the one hand with P-type layer 7 it
Between the Ohmic contact that has been formed, another aspect metallic reflector 6 has high emissivity, and reflectivity can be more than 80%.
Alternatively, the thickness of metallic reflector 6 can be 1-5 microns.
In another implementation of the present embodiment, N-type electrode 10 can use Au, Al, Cu, Ag, Fe, Ti, Cr, Pt
In one or more be made.
In another implementation of the present embodiment, tack coat 2 can use one in AuSn, Au, Ti, In, InAu
Kind or a variety of be made.
In another implementation of the present embodiment, permanent substrate 1 can use one in Si, SiC, Cu, Mo, CuW
Kind or a variety of be made.
How the extension of electric current is realized if being briefly described to the embodiment of the present invention with reference to Fig. 2-Fig. 4：
Fig. 2 is the top view of spiral coil 4, and A represents electric field in Fig. 2, and arrow represents direction of an electric field, and B represents magnetic field, fork
Fork represents magnetic direction.Figure it is seen that when spiral coil is powered, the magnetic effect based on electric current, in spiral coil
Produce the magnetic field along the formation direction of each layers of LED.Specifically, permanent substrate is connect to the positive pole of power supply, N-type electricity as P-type electrode
Pole connects the negative pole of power supply, due to the permanent substrate being sequentially connected electrically, tack coat, spiral coil, metallic reflector, P-type layer, hair
Photosphere, N-type layer, N-type electrode are made of non-insulating material, therefore in the presence of power supply, can be led in spiral coil
Electricity, produces magnetic field.
Fig. 3 is the stress diagram of the electronics of N-type layer, and B represents magnetic field in Fig. 3, and v represents the direction of motion of electronics (with N-type
Electrode is relevant with the set location of P-type electrode, for example in Fig. 1, N-type electrode is arranged on the right side on N-type layer periphery, then electronics
The direction of motion is left side of the right side from N-type layer periphery shown in Fig. 3 to N-type layer periphery), F represents Lorentz force.Can from Fig. 3
To find out, after being produced in magnetic field, according to Hall effect, the electronics of N-type layer is in the presence of Lorentz force to N-type layer periphery
Front side is deflected, and is evenly distributed on the front side on N-type layer periphery, is extended the electric current of the front side on N-type layer periphery, therefore need not be in N
Bar shaped section is set on the front side on type layer periphery, the setting of bar shaped section is reduced, as shown in Figure 4.Solid line represents N-type in Fig. 4
The contact and bar shaped section (N-type electrode) set on layer, dotted line represents the bar shaped section removed.From fig. 4, it can be seen that of the invention
The bar shaped section for the light emitting diode that embodiment is provided is reduced, and the light absorbent that N-type electrode is used is reduced, N-type electrode pair
The absorption for the light that luminescent layer is sent is reduced, and LED luminous efficiency is improved.
The embodiment of the present invention by setting spiral coil between permanent substrate and metallic reflector, spiral coil
Center line is parallel with the formation direction of each layer of light emitting diode, when light emitting diode is powered, and one is formed in spiral coil
Magnetic field, according to Hall effect, the side of the electronics of N-type layer by Lorentz force towards N-type layer periphery is deflected so that N-type layer
Electronics the side on N-type layer periphery is evenly distributed in the presence of Lorentz force, the electric current disperseed in N-type layer is promoted
The extension of electric current, LED chip is easier to light, moreover, N-type electrode can reduce the slab region set to extend electric current
Section, reduces the use of the light absorbent of electrode use, and then reduces the absorption for the light that N-type electrode is sent to luminescent layer, ties
LED chip electrode design is closed, LED luminous efficiency is improved.Meanwhile, P-type electrode is contacted with metallic reflector, the sky of P-type layer
Cave current expansion is good, while metallic reflector reflects away the light that luminescent layer is sent, further increases LED luminous effect
Rate.
Embodiment two
The embodiments of the invention provide a kind of manufacture method of light emitting diode, referring to Fig. 5, the manufacture method includes：
Step 201：Grow N-type layer, luminescent layer, P-type layer successively on temporary base, form epitaxial layer.
Fig. 6 a are the structural representation of the LED after step 201 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer.
Alternatively, temporary base can use the one or more in sapphire, AlN, SiC, GaN to be made.
Step 202：Metallic reflector is formed in P-type layer.
Fig. 6 b are the structural representation of the LED after step 202 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector.
Alternatively, metallic reflector can use the one or more in ITO/Ag, Ag, Al, Au, Pt, Rh to be made.
It is to be appreciated that metallic reflector is made of above-mentioned material, the Europe that on the one hand can have been formed between P-type layer
Nurse is contacted, and on the other hand causes metallic reflector to have high emissivity, reflectivity can be more than 80%.
Alternatively, the thickness of metallic reflector can be 1-5 microns.
Step 203：The second insulating barrier is formed on metallic reflector.
Wherein, provided with a through hole along the formation direction of each layers of LED in the second insulating barrier.
Fig. 6 c are the structural representation of the LED after step 203 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier.
Step 204：Spiral coil is formed over the second dielectric.
Wherein, the center line of spiral coil is parallel with the formation direction of each layers of LED, and one end of spiral coil is through the
Through hole in two insulating barriers is connected with metallic reflector.
It is another in the specific implementation, on the one hand provided with a through hole along the formation direction of each layers of LED in the second insulating barrier
Aspect, spiral coil and metallic reflector are made of electron gun vapour deposition method, therefore are easy to the one of spiral coil
End is connected through the through hole in the second insulating barrier with metallic reflector.
Fig. 6 d are the structural representation of the LED after step 204 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil.
Specifically, the step 204 can include：
One layer of photoresist is covered over the second dielectric；
In the case where spiral photolithography plate blocks photoresist, photoresist is exposed；
Photoresist after exposure is corroded using developing solution, spiral photoresist is removed；
Layer of metal film is deposited using electron gun；
The metal film on remaining photoresist and photoresist is peeled off, spiral coil is formed.
Alternatively, spiral coil can use the one or more in Au, Al, Cu, Ag, Fe, Ti to be made.
Alternatively, the height of spiral coil can be 1-10 microns.
Step 205：The first insulating barrier is formed on spiral coil.
Wherein, the through hole in a through hole along the formation direction of each layers of LED, the first insulating barrier is provided with the first insulating barrier
Lead to the other end of spiral coil.
Fig. 6 e are the structural representation of the LED after step 205 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, 3 tables
Show the first insulating barrier.
Alternatively, the first insulating barrier can use SiO2Or SiNxIt is made, the second insulating barrier can use SiO2Or
SiNxIt is made.
Alternatively, the thickness of the first insulating barrier can be 1-10 microns, and the thickness of the second insulating barrier can be 1-10 microns.
Step 206：Permanent substrate is sticked on the first insulating barrier by tack coat.
Wherein, tack coat is connected with the other end of the spiral coil through the first insulating barrier, tack coat and permanent substrate
It is made of non-insulating material.
Fig. 6 f are the structural representation of the LED after step 206 is performed.Wherein, 11 temporary base is represented, 9 represent N-type
Layer, 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, 3 tables
Show the first insulating barrier, 2 represent tack coat, and 1 represents permanent substrate.
It is another in the specific implementation, on the one hand provided with a through hole along the formation direction of each layers of LED in the first insulating barrier
Aspect, coil and adhesive layer and spiral coil are made of electron gun vapour deposition method, therefore are easy to tack coat through the
The other end connection of through hole and spiral coil in one insulating barrier.
In a kind of implementation of the present embodiment, permanent substrate can use Si, SiC, Cu, Mo, CuW in one kind or
It is a variety of to be made.
In another implementation of the present embodiment, tack coat can use one kind in AuSn, Au, Ti, In, InAu
Or a variety of be made.
Step 207：Institute's epitaxial layer is inverted, temporary base is removed.
Fig. 6 g are the structural representation of the LED after step 207 is performed.Wherein, 9 N-type layer is represented, 8 represent luminescent layer, 7
P-type layer is represented, 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier, 2 tables
Show tack coat, 1 represents permanent substrate.
Step 208：N-type electrode is set in N-type layer.
Fig. 6 h are the structural representation of the LED after step 208 is performed.Wherein, 9 N-type layer is represented, 8 represent luminescent layer, 7
P-type layer is represented, 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier, 2 tables
Show tack coat, 1 represents permanent substrate, and 10 represent N-type electrode.
Alternatively, N-type electrode can use the one or more in Au, Al, Cu, Ag, Fe, Ti, Cr, Pt to be made.
The embodiment of the present invention by setting spiral coil between permanent substrate and metallic reflector, spiral coil
Center line is parallel with the formation direction of each layer of light emitting diode, when light emitting diode is powered, and one is formed in spiral coil
Magnetic field, according to Hall effect, the side of the electronics of N-type layer by Lorentz force towards N-type layer periphery is deflected so that N-type layer
Electronics the side on N-type layer periphery is evenly distributed in the presence of Lorentz force, the electric current disperseed in N-type layer is promoted
The extension of electric current, LED chip is easier to light, moreover, N-type electrode can reduce the slab region set to extend electric current
Section, reduces the use of the light absorbent of electrode use, and then reduces the absorption for the light that N-type electrode is sent to luminescent layer, ties
LED chip electrode design is closed, LED luminous efficiency is improved.Meanwhile, P-type electrode is contacted with metallic reflector, the sky of P-type layer
Cave current expansion is good, while metallic reflector reflects away the light that luminescent layer is sent, further increases LED luminous effect
Rate.
The embodiments of the present invention are for illustration only, and the quality of embodiment is not represented.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of light emitting diode, it is characterised in that the light emitting diode includes permanent substrate and is sequentially formed at described
Tack coat, the first insulating barrier, spiral coil, the second insulating barrier, metallic reflector, P-type layer, luminescent layer, N on permanent substrate
Type layer and N-type electrode, the center line of the spiral coil are parallel with the formation direction of each layer of the light emitting diode, the spiral shell
One end of rotation shape coil is connected through second insulating barrier with the metallic reflector, and the other end of the spiral coil is worn
Cross first insulating barrier to be connected with the tack coat, the tack coat and the permanent substrate use non-insulating material system
Into the N-type electrode includes contact and the bar shaped section electrically connected with the contact, and the contact is close to the N-type layer
Periphery a side set, the bar shaped section is close to the adjacent with the side residing for the contact of the periphery of the N-type layer
Side set.
2. light emitting diode according to claim 1, it is characterised in that the spiral coil using Au, Al, Cu, Ag,
One or more in Fe, Ti are made.
3. light emitting diode according to claim 1, it is characterised in that the height of the spiral coil is that 1-10 is micro-
Rice.
4. light emitting diode according to claim 1, it is characterised in that first insulating barrier uses SiO2Or SiNx
It is made, second insulating barrier uses SiO2Or SiNxIt is made.
5. light emitting diode according to claim 1, it is characterised in that the thickness of first insulating barrier is that 1-10 is micro-
Rice, the thickness of second insulating barrier is 1-10 microns.
6. a kind of manufacture method of light emitting diode, it is characterised in that the manufacture method includes：
Grow N-type layer, luminescent layer, P-type layer successively on temporary base, form epitaxial layer；
Metallic reflector is formed in the P-type layer；
Formed on the metallic reflector in the second insulating barrier, second insulating barrier and be provided with one along the light emitting diode
The through hole in the formation direction of each layer；
Spiral coil is formed on second insulating barrier, the center line of the spiral coil and the light emitting diode are each
The formation direction of layer is parallel, and one end of the spiral coil passes through through hole and the metallic reflection in second insulating barrier
Layer connection；
Formed on the spiral coil in the first insulating barrier, first insulating barrier and be provided with one along the light emitting diode
Through hole in the through hole in the formation direction of each layer, first insulating barrier leads to the other end of the spiral coil；
Permanent substrate is sticked on first insulating barrier by tack coat, the tack coat is passed through in first insulating barrier
Through hole be connected with the other end of the spiral coil, the tack coat and the permanent substrate use non-insulating material system
Into；
The epitaxial layer is inverted, the temporary base is removed；
N-type electrode is set in the N-type layer；
The N-type electrode includes contact and the bar shaped section electrically connected with the contact, and the contact is close to the N-type layer
Periphery a side set, the bar shaped section is close to the adjacent with the side residing for the contact of the periphery of the N-type layer
Side set.
7. manufacture method according to claim 6, it is characterised in that described to form spiral shape on second insulating barrier
Coil, including：
One layer of photoresist is covered on second insulating barrier；
In the case where spiral photolithography plate blocks photoresist, photoresist is exposed；
Photoresist after exposure is corroded using developing solution, spiral photoresist is removed；
Layer of metal film is deposited using electron gun；
The metal film on remaining photoresist and photoresist is peeled off, spiral coil is formed.
8. manufacture method according to claim 6, it is characterised in that the spiral coil using Au, Al, Cu, Ag,
One or more in Fe, Ti are made.
9. manufacture method according to claim 6, it is characterised in that the height of the spiral coil is 1-10 microns.
10. manufacture method according to claim 6, it is characterised in that first insulating barrier uses SiO2Or SiNxSystem
Into second insulating barrier uses SiO2Or SiNxIt is made.
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| CN201510047727.XA CN104617196B (en) | 2015-01-30 | 2015-01-30 | A kind of light emitting diode and its manufacture method |
| PCT/CN2016/072684 WO2016119732A1 (en) | 2015-01-30 | 2016-01-29 | Light-emitting diode and manufacturing method therefor |
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| CN105226153A (en) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode with high expansion effect |
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| CN101271917A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Antistatic structure of semiconductor lighting device and manufacturing method thereof |
| CN101271916A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
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| CN101271916A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
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