CN105226153A - A kind of light-emitting diode with high expansion effect - Google Patents
A kind of light-emitting diode with high expansion effect Download PDFInfo
- Publication number
- CN105226153A CN105226153A CN201510703675.7A CN201510703675A CN105226153A CN 105226153 A CN105226153 A CN 105226153A CN 201510703675 A CN201510703675 A CN 201510703675A CN 105226153 A CN105226153 A CN 105226153A
- Authority
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- China
- Prior art keywords
- emitting diode
- light
- layer
- expansion effect
- high expansion
- Prior art date
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Links
- 230000000694 effects Effects 0.000 title claims abstract description 22
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 77
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of light-emitting diode with high expansion effect, comprise a substrate, one light-emitting diode chip for backlight unit epitaxial loayer is set over the substrate, two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the first alternate multiple membrane structure, and the another two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the second alternate multiple membrane structure.Invention achieves the current expansion effect of N, P type effectively strengthening light-emitting diode, and don't electrode can be added to be in the light area, and improve the N-type current expansion effect at large area scale chips.
Description
Technical field
The present invention relates to the technical field of light-emitting diode, a kind of light-emitting diode with high expansion effect is provided especially.
Background technology
In recent years, light-emitting diode development is swift and violent, and this and optical semiconductor power technology, the newly development of illumination light source technology are closely related.Along with the continuous expansion of LED application, the performance of people to LED chip it is also proposed more and more higher requirement.So need constantly to improve LED external quantum efficiency.
Strengthen the current expansion effect of light-emitting diode as an important channel of improving LED external quantum efficiency.Way conventional at present has: P type aspect is by adopting P type expansion electrode, and N-type aspect is by improving the doping content etc. of N-type.But, adopt P type expansion electrode to significantly increase electrode and to be in the light area; Improving the doping content of N-type can make the current expansion effect of raising N-type reach capacity, and can run into bottleneck time on the chip being applied in large area size.
In view of this, a kind of light-emitting diode with high expansion effect of the present inventor's specialized designs, this case produces thus.
Summary of the invention
The present invention, for solving the problem, provides a kind of light-emitting diode with high expansion effect.
For achieving the above object, the technical solution used in the present invention is:
A kind of light-emitting diode with high expansion effect, comprise a substrate, one light-emitting diode chip for backlight unit epitaxial loayer is set over the substrate, two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the first alternate multiple membrane structure, and the another two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the second alternate multiple membrane structure.
Preferably, described first alternate multiple membrane structure is Si
3n
4with Ni-Fe alloy multilayer alternating structure, described second alternate multiple membrane structure is Ni-Fe alloy and Si
3n
4multilayer alternating structure.
Preferably, described Si
3n
4the logarithm mutually replaced with Ni-Fe alloy multilayer alternating structure is 10-60 couple, corresponding, described Ni-Fe alloy and Si
3n
4the logarithm that multilayer alternating structure replaces mutually is 10-60 couple.
Preferably, described Si
3n
4thickness in monolayer be 2-15nm, the thickness in monolayer of described Ni-Fe Alloy is 20-60nm.
Preferably, described light-emitting diode chip for backlight unit epitaxial loayer comprises:
Be positioned at the involuntary doped layer of described substrate top surface;
Be positioned at the N-shaped conductive layer of described involuntary doped layer upper surface;
Be positioned at the active area of described N-shaped conductive layer upper surface;
Be positioned at the electronic barrier layer of described active area upper surface;
Be positioned at the P-type conduction layer of described electronic barrier layer upper surface;
Be positioned at the P type contact layer of described P-type conduction layer upper surface;
Be positioned at the ITO conductive layer of described P type contact layer upper surface;
Be positioned at the p-electrode of described ITO Conductive layer portions upper surface;
Be positioned at described N-shaped conductive layer upper surface, and be positioned at the n-electrode of described active area, electronic barrier layer, P-type conduction layer, P type contact layer and ITO conductive layer side surface; And
In described n-electrode and described active area, electronic barrier layer, P-type conduction layer, electrode isolation band between P type contact layer and ITO conductive layer.
Preferably, described light-emitting diode chip for backlight unit epi-layer surface and side surrounding all have chip protection layer.
Preferably, the material of described chip protection layer is SiO
2.
Preferably, the thickness of described chip protection layer is 100-400nm.
The present invention arranges Si by the two sides in the surrounding of light-emitting diode chip for backlight unit epitaxial loayer side
3n
4with Ni-Fe alloy alternate multiple membrane structure, Ni-Fe alloy and Si are set on another two sides
3n
4alternate multiple membrane structure; The magnetic pole forming relative two sides close is different, the built-in magnetic field being parallel to chip plane is produced at chip internal, direction of motion deflection is played to the electronics transmitted perpendicular to chip plane, hole, effectively improves the current expansion effect of P, N-type, increase the outer quantum effects of LED.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is structural representation of the present invention.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearly, understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, the invention provides a kind of light-emitting diode with high expansion effect, comprise a substrate, one light-emitting diode chip for backlight unit epitaxial loayer is set over the substrate, two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the first alternate multiple membrane structure, and the another two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the second alternate multiple membrane structure.
Preferably, described first alternate multiple membrane structure is Si
3n
4with Ni-Fe alloy multilayer alternating structure, described second alternate multiple membrane structure is Ni-Fe alloy and Si
3n
4multilayer alternating structure.Contrary by structure, make the side opposed form contrary magnetic pole, effectively form built-in magnetic field at chip internal; Formed in the side of two groups of opposition and be parallel to chip surface and orthogonal built-in magnetic field.
Preferably, described Si
3n
4the logarithm mutually replaced with Ni-Fe alloy multilayer alternating structure is 10-60 couple, corresponding, described Ni-Fe alloy and Si
3n
4the logarithm that multilayer alternating structure replaces mutually is 10-60 couple.
There is less coercive force and higher effective permeability value, described Si to allow built-in magnetic field
3n
4thickness in monolayer be 2-15nm, the thickness in monolayer of described Ni-Fe alloy is 20-60nm.
Continue referring to Fig. 1, described light-emitting diode chip for backlight unit epitaxial loayer comprises:
Be positioned at the involuntary doped layer of described substrate top surface;
Be positioned at the N-shaped conductive layer of described involuntary doped layer upper surface;
Be positioned at the active area of described N-shaped conductive layer upper surface;
Be positioned at the electronic barrier layer of described active area upper surface;
Be positioned at the P-type conduction layer of described electronic barrier layer upper surface;
Be positioned at the P type contact layer of described P-type conduction layer upper surface;
Be positioned at the ITO transparency conducting layer of described P type contact layer upper surface;
Be positioned at the p-electrode of described ITO Conductive layer portions upper surface;
Be positioned at described N-shaped conductive layer upper surface, and be positioned at the n-electrode of described active area, electronic barrier layer, P-type conduction layer, P type contact layer and ITO conductive layer side surface; And
In described n-electrode and described active area, electronic barrier layer, P-type conduction layer, electrode isolation band between P type contact layer and ITO conductive layer.
In order to form available protecting in chip sides, described light-emitting diode chip for backlight unit epi-layer surface and side surrounding all have chip protection layer, and the material of described chip protection layer is SiO
2, the thickness of described chip protection layer is 100-400nm; Described chip protection layer is arranged at the side surrounding of chip and the surface of chip, mainly for the protection of chip surface and play epitaxial loayer and can not be caused active area short circuit by the conducting of magnetic field layer material.
Above-mentioned explanation illustrate and describes the preferred embodiments of the present invention, as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.
Claims (8)
1. one kind has the light-emitting diode of high expansion effect, comprise a substrate, it is characterized in that: a light-emitting diode chip for backlight unit epitaxial loayer is set over the substrate, two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the first alternate multiple membrane structure, and the another two sides in the surrounding of described light-emitting diode chip for backlight unit epitaxial loayer side arranges the second alternate multiple membrane structure.
2. a kind of light-emitting diode with high expansion effect according to claim 1, is characterized in that: described first alternate multiple membrane structure is Si
3n
4with Ni-Fe alloy multilayer alternating structure, described second alternate multiple membrane structure is Ni-Fe alloy and Si
3n
4multilayer alternating structure.
3. a kind of light-emitting diode with high expansion effect according to claim 2, is characterized in that: described Si
3n
4the logarithm mutually replaced with Ni-Fe alloy multilayer alternating structure is 10-60 couple, corresponding, described Ni-Fe alloy and Si
3n
4the logarithm that multilayer alternating structure replaces mutually is 10-60 couple.
4. a kind of light-emitting diode with high expansion effect according to claim 2, is characterized in that: described Si
3n
4thickness in monolayer be 2-15nm, the thickness in monolayer of described Ni-Fe Alloy is 20-60nm.
5. a kind of light-emitting diode with high expansion effect according to claim 1, is characterized in that, described light-emitting diode chip for backlight unit epitaxial loayer comprises:
Be positioned at the involuntary doped layer of described substrate top surface;
Be positioned at the N-shaped conductive layer of described involuntary doped layer upper surface;
Be positioned at the active area of described N-shaped conductive layer upper surface;
Be positioned at the electronic barrier layer of described active area upper surface;
Be positioned at the P-type conduction layer of described electronic barrier layer upper surface;
Be positioned at the P type contact layer of described P-type conduction layer upper surface;
Be positioned at the ITO conductive layer of described P type contact layer upper surface;
Be positioned at the p-electrode of described ITO Conductive layer portions upper surface;
Be positioned at described N-shaped conductive layer upper surface, and be positioned at the n-electrode of described active area, electronic barrier layer, P-type conduction layer, P type contact layer and ITO conductive layer side surface; And
In described n-electrode and described active area, electronic barrier layer, P-type conduction layer, electrode isolation band between P type contact layer and ITO conductive layer.
6. a kind of light-emitting diode with high expansion effect according to claim 1, is characterized in that: described light-emitting diode chip for backlight unit epi-layer surface and side surrounding all have chip protection layer.
7. a kind of light-emitting diode with high expansion effect according to claim 6, is characterized in that: the material of described chip protection layer is SiO
2.
8. a kind of light-emitting diode with high expansion effect according to claim 6, is characterized in that: the thickness of described chip protection layer is 100-400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703675.7A CN105226153A (en) | 2015-10-26 | 2015-10-26 | A kind of light-emitting diode with high expansion effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510703675.7A CN105226153A (en) | 2015-10-26 | 2015-10-26 | A kind of light-emitting diode with high expansion effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105226153A true CN105226153A (en) | 2016-01-06 |
Family
ID=54994986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510703675.7A Pending CN105226153A (en) | 2015-10-26 | 2015-10-26 | A kind of light-emitting diode with high expansion effect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938865A (en) * | 2016-07-16 | 2016-09-14 | 王星河 | Nitride light-emitting diode and manufacturing method thereof |
| CN107658269A (en) * | 2017-08-24 | 2018-02-02 | 华灿光电（浙江）有限公司 | Light emitting diode chip and preparation method thereof |
| WO2018107323A1 (en) * | 2016-12-12 | 2018-06-21 | Goertek. Inc | Display device manufacturing method, display device and electronics apparatus |
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| CN101483214A (en) * | 2008-01-11 | 2009-07-15 | 财团法人工业技术研究院 | Light-emitting device |
| TW201103165A (en) * | 2009-07-10 | 2011-01-16 | Ind Tech Res Inst | Magnetic light eitting device, magnetic light eitting apparatus and semi-conductive nitride template |
| CN102479893A (en) * | 2010-11-26 | 2012-05-30 | 奇力光电科技股份有限公司 | Optoelectronic component |
| CN103187502A (en) * | 2011-12-29 | 2013-07-03 | 财团法人工业技术研究院 | Nitride semiconductor light emitting device |
| CN103311409A (en) * | 2013-06-09 | 2013-09-18 | 上海蓝光科技有限公司 | Semiconductor light-emitting device and manufacturing method thereof |
| CN104124321A (en) * | 2013-04-24 | 2014-10-29 | 展晶科技(深圳)有限公司 | Semiconductor light-emitting element and manufacturing method thereof |
| US20150097205A1 (en) * | 2013-10-07 | 2015-04-09 | Gwangju Institute Of Science And Technology | Light emitting diode having magnetic structure and method of fabricating the same |
| CN104617207A (en) * | 2015-01-30 | 2015-05-13 | 华灿光电股份有限公司 | LED (Light Emitting Diode) and manufacturing method thereof |
| CN104617196A (en) * | 2015-01-30 | 2015-05-13 | 华灿光电股份有限公司 | Light emitting diode and production method thereof |
-
2015
- 2015-10-26 CN CN201510703675.7A patent/CN105226153A/en active Pending
Patent Citations (9)
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| CN101483214A (en) * | 2008-01-11 | 2009-07-15 | 财团法人工业技术研究院 | Light-emitting device |
| TW201103165A (en) * | 2009-07-10 | 2011-01-16 | Ind Tech Res Inst | Magnetic light eitting device, magnetic light eitting apparatus and semi-conductive nitride template |
| CN102479893A (en) * | 2010-11-26 | 2012-05-30 | 奇力光电科技股份有限公司 | Optoelectronic component |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938865A (en) * | 2016-07-16 | 2016-09-14 | 王星河 | Nitride light-emitting diode and manufacturing method thereof |
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| WO2018107323A1 (en) * | 2016-12-12 | 2018-06-21 | Goertek. Inc | Display device manufacturing method, display device and electronics apparatus |
| CN107658269A (en) * | 2017-08-24 | 2018-02-02 | 华灿光电（浙江）有限公司 | Light emitting diode chip and preparation method thereof |
| CN107658269B (en) * | 2017-08-24 | 2020-09-08 | 华灿光电（浙江）有限公司 | Light emitting diode chip and preparation method thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160106 |
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