CN102479893A - Optoelectronic component - Google Patents
Optoelectronic component Download PDFInfo
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- CN102479893A CN102479893A CN2010106065694A CN201010606569A CN102479893A CN 102479893 A CN102479893 A CN 102479893A CN 2010106065694 A CN2010106065694 A CN 2010106065694A CN 201010606569 A CN201010606569 A CN 201010606569A CN 102479893 A CN102479893 A CN 102479893A
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- Prior art keywords
- magnetic component
- photoelectricity
- lamination
- photoelectric cell
- epitaxial loayer
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- 230000005693 optoelectronics Effects 0.000 title 1
- 238000003475 lamination Methods 0.000 claims abstract description 84
- 230000005622 photoelectricity Effects 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- 230000005355 Hall effect Effects 0.000 abstract description 17
- 239000000969 carrier Substances 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 description 47
- 239000004065 semiconductor Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
The invention discloses a photoelectric element, which comprises a photoelectric lamination layer and a magnetic component. The magnetic member is disposed within or adjacent to the photovoltaic stack and generates a magnetic field through the photovoltaic stack. The magnetic component generates a magnetic field passing through the photoelectric lamination layer, so that the moving carriers in the photoelectric lamination layer are subjected to the Hall effect to change the moving path of the moving carriers, and the photoelectric efficiency is improved.
Description
Technical field
The present invention relates to a kind of photoelectric cell, particularly a kind of have magnetic component to produce the photoelectric cell in magnetic field.
Background technology
(light-emitting diode LED) is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode belongs to chemiluminescence; Have advantages such as power consumption is low, component life is long, reaction speed is fast; Add the little characteristic of processing minimum or arrayed elements easily of volume; Therefore in recent years along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic sign or the automobile-used indicator light of liquid crystal indicator.
Fig. 1 is a kind of schematic side view of known light-emitting diode 1.Light-emitting diode 1 comprises substrate 11, n type semiconductor layer 12, multiple quantum trap layer 13, p type semiconductor layer 14, light transmission conductive layer 15, first electrode 16 and second electrode 17.In light-emitting diode 1, said elements is up in layer to be piled up by substrate 11 to form, and grows along Y direction.And multiple quantum trap layer 13 often only has the thickness of tens of or hundreds of nanometers as main luminous zone.When electric current when second electrode 17 (positive pole) flows to first electrode 16 (negative pole), (Fig. 1 only shows V can to have velocity component along X, Y, Z-direction
X, V
YVelocity component), and charge carrier can pass through main luminous zone soon, does effectively compound and produces photon and can't rest on main luminous zone for a long time, thereby cause the luminous efficacy of light-emitting diode 1 not good.
Therefore, how to provide a kind of photoelectric cell, become one of important topic through changing luminous efficacy or the electricity generation efficiency that the motion path of charge carrier in photoelectric cell promotes photoelectric cell.
Summary of the invention
Because above-mentioned problem, the object of the invention is to provide a kind of photoelectric cell through changing the luminous efficacy that the motion path of charge carrier in photoelectric cell promotes photoelectric cell.
For reaching above-mentioned purpose, comprise photoelectricity lamination and magnetic component according to a kind of photoelectric cell of the present invention.Magnetic component is arranged in the photoelectricity lamination or adjacently is arranged at the photoelectricity lamination and produces magnetic field.
In an embodiment, photoelectric cell can be light-emitting diode, through the magnetic field that magnetic component produced, can make light-emitting diode promote luminous efficacy.
In an embodiment, magnetic component can be positioned under the photoelectricity lamination or on.So all can produce magnetic field through the photoelectricity lamination to prolong the motion path of charge carrier in the photoelectricity lamination.
In an embodiment; The photoelectricity lamination has substrate and epitaxial loayer; Epitaxial loayer is arranged on the substrate; The photoelectricity lamination also has current-diffusion layer and is arranged on the epitaxial loayer, and magnetic component is embedded in the current-diffusion layer, and the magnetic field that the photoelectricity lamination is passed through in the magnetic component generation is to prolong the motion path of charge carrier in the photoelectricity lamination.
In an embodiment, the photoelectricity lamination has substrate and epitaxial loayer, and epitaxial loayer is arranged on the substrate, and epitaxial loayer has at least one groove so that this epitaxial loayer forms platform, and magnetic component is positioned at the groove of epitaxial loayer.For example magnetic component can comprise two magnetospheres, these magnetospheres lay respectively at epitaxial loayer platform both sides and be close to the multiple quantum trap layer of epitaxial loayer, pass the magnetic field of photoelectricity lamination with generation, to prolong the motion path of charge carrier in the photoelectricity lamination.In addition, in this embodiment, the height of magnetic component can be no more than the height of platform to avoid causing shading.
In an embodiment, the photoelectricity lamination has substrate and epitaxial loayer, and epitaxial loayer is arranged on the substrate; The photoelectricity lamination also has first electrode and second electrode; First electrode is arranged in the groove of epitaxial loayer, and second electrode is arranged on the epitaxial loayer, and magnetic component is between second electrode and epitaxial loayer; Pass the magnetic field of photoelectricity lamination with generation, to prolong the motion path of charge carrier in the photoelectricity lamination.
In an embodiment, the magnetic component and second electrode are overlapped at least, have overlapping part through making the magnetic component and second electrode, can reduce the shading amount that both cause.
In an embodiment, magnetic component comprises iron, cobalt, nickel, manganese or other magnetic materials, and in addition, magnetic component also can comprise high reflecting material, with the usefulness as the reflector.
In an embodiment; Magnetic component can be strip, multiple spot shape or discontinuously arranged shape, through the magnetic component of difformity or distribution, can produce the electric field of varying strength or direction; Charge carrier being produced different prolongation effects, and then increase the application of magnetic component.
For reaching above-mentioned purpose, a kind of photoelectric cell of the present invention comprises photoelectricity lamination and magnetic component.The photoelectricity lamination has substrate and epitaxial loayer, and epitaxial loayer is arranged on the substrate, and epitaxial loayer has at least one groove so that epitaxial loayer forms platform.Magnetic component is positioned at the groove of epitaxial loayer, produces magnetic field through the photoelectricity lamination.
For reaching above-mentioned purpose, a kind of photoelectric cell of the present invention comprises photoelectricity lamination and magnetic component.The photoelectricity lamination has substrate and epitaxial loayer, and epitaxial loayer is arranged on the substrate, and the photoelectricity lamination also has first electrode and second electrode, and first electrode is arranged in the groove of epitaxial loayer, and second electrode is arranged on the epitaxial loayer.Magnetic component is arranged in the photoelectricity lamination, and between second electrode and epitaxial loayer, produces magnetic field through the photoelectricity lamination.
Hold the above; Photoelectric cell of the present invention is through the setting of magnetic component; Magnetic component can produce the magnetic field through the photoelectricity lamination, and then makes charge carrier in the motion in the photoelectricity lamination receive Hall effect (Hall effect) and change its motion path and promote photoelectricity usefulness.For example as far as light-emitting diode; Utilize Hall effect to make the motion charge carrier generation effect of photoelectricity lamination; Change its direction of motion; And then prolong the motion path of charge carrier and reach electric current diffusion purpose or increase that charge carrier rests on the time of main luminous zone and the chance that increases the charge carrier recombination luminescence, and promote luminous efficacy.
Description of drawings
Fig. 1 is a kind of schematic side view of known light-emitting diode;
Fig. 2 changes the sketch map of motion path for the motion charge carrier receives Hall effect;
Fig. 3 to Fig. 5 is the sketch map of different examples of a kind of photoelectric cell and the magnetic component thereof of the preferred embodiment of the present invention; And
Fig. 6 A to Fig. 6 C is the schematic top plan view of different examples of a kind of photoelectric cell and the magnetic component thereof of the preferred embodiment of the present invention.
Description of reference numerals
1: light-emitting diode 11,21: substrate
12:N type semiconductor layer 13,223: multiple quantum trap layer
14:P type semiconductor layer 15: light transmission conductive layer
16,23: the first electrodes 17,24: the second electrodes
2,2a～2e: photoelectric cell 20: photoelectricity lamination
22: 221: the first semiconductor layers of epitaxial loayer
25: speculum 26: passivation layer
28: current-diffusion layer 30: magnetic component
31,32: magnetosphere B: magnetic field
M: platform
Embodiment
Below will a kind of photoelectric cell according to the preferred embodiment of the present invention be described with reference to relevant drawings, wherein components identical will be explained with identical reference marks.
Before explanation the present invention, sketch Hall effect (Hall effect) with Fig. 2 earlier.Hall effect is meant that working as solid conductor has electric current to pass through, and is placed in the magnetic field, and the electric charge carrier in the conductor receives Lorentz force and secundly; Then produce voltage; Except that conductor, semiconductor also can produce Hall effect, and semi-conductive Hall effect is better than conductor.As shown in Figure 2, with speed V motion, other has a magnetic field B to be present in the space of charge carrier to charge carrier on X-direction, and its magnetic force direction is to point out the Z-direction of paper.When charge carrier is positive charge, receive the effect of magnetic field B, according to the right-hand rule, positive charge can be crooked towards the direction perpendicular to speed V and magnetic field B, i.e. (Y direction) bending downwards.In like manner, if charge carrier is negative electrical charge, then receives the effect of magnetic field B and be bent upwards, so the motion path of charge carrier promptly is changed.
Please with reference to shown in Figure 3, a kind of photoelectric cell 2 of the preferred embodiment of the present invention comprises photoelectricity lamination 20 and magnetic component 30.Photoelectric cell of the present invention can for example be light-emitting diode (light-emitting diode, LED).Photoelectricity lamination 20 comprises substrate 21, epitaxial loayer 22, first electrode 23 and second electrode 24.
The material of substrate 21 can for example comprise sapphire (sapphire), carborundum (SiC), gallium phosphide (GaP), GaAs (GaAs) or silicon (Si), is example with the sapphire at this.
And in order to electrically conduct second semiconductor layer 222; First semiconductor layer 221 and the part in the multiple quantum trap layer 223 are for example utilized the photoengraving carving technology to remove and are formed groove 224; Second semiconductor layer, 222 surfaces in order to exposed portions serve; First electrode 23 is arranged on the surface that second semiconductor layer 222 exposed, that is first electrode 23 is arranged in the groove 224.
Magnetic component of the present invention can be arranged in the photoelectricity lamination 20 or the adjacent photoelectricity lamination 20 that is arranged at also produces the magnetic field through photoelectricity lamination 20.The magnetic component 30 of present embodiment is an example for magnetic material layer and with the adjacent photoelectricity lamination 20 that is arranged at, and magnetic component 30 is arranged under the photoelectricity lamination 20.In this, photoelectricity lamination 20 also comprises speculum 25, and magnetic component 30 is arranged under the speculum 25.The material of magnetic component 30 can for example comprise iron, cobalt, nickel or manganese, and magnetic component 30 also can comprise high reflecting material, for example aluminium or silver, and perhaps magnetic component 30 can form catoptric arrangement, and thus, photoelectricity lamination 20 can not need be provided with speculum 25.
Except above-mentioned position, the multiple position that magnetic component of the present invention can be arranged at the photoelectricity lamination makes the motion charge carrier receive Hall effect to change its motion path, below illustrate to produce magnetic field through the photoelectricity lamination.
Please with reference to shown in Figure 4, in the photoelectric cell 2a of this example, photoelectric cell 2a comprises photoelectricity lamination 20 and magnetic component.Photoelectric cell 2a has two grooves 224, (comprises first semiconductor layer 221, second semiconductor layer 222 and multiple quantum trap layer 223) so that epitaxial loayer and forms platform (mesa) M, and second semiconductor layer, 222 surfaces of exposed portions serve.Photoelectric cell 2a also comprises passivation layer (passivation layer) 26, and its setting also is covered on epitaxial loayer, current-diffusion layer 28, first electrode 23 and second electrode 24, and be extended down to these grooves 224.
In this, magnetic component comprises two magnetospheres 31,32, and these magnetospheres 31,32 lay respectively at the groove 224 of photoelectric cell 2a and are positioned at the both sides of platform M.Magnetosphere 31, the 32 also adjacent both sides that are arranged at the multiple quantum trap layer 223 of epitaxial loayer 22, and next-door neighbour's multiple quantum trap layer 223.Magnetosphere 31,32 can for example be formed at groove 224 through vapor deposition, photoetching and etch process.
Thus, magnetosphere 31,32 produces and passes the magnetic field of photoelectricity lamination 20, and the magnetic force that X-direction can be provided is to photoelectricity lamination 20.The magnetic field of the X-direction through photoelectricity lamination 20; Can make the charge carrier of photoelectricity lamination 20 receive Hall effect and change its motion path at the velocity component of Y, Z-direction; For example be to make the motion of charge carrier become helical form; Thereby prolong the motion path of charge carrier from second electrode, 24 to first electrodes 23, and reach electric current diffusion purpose or increase that charge carrier rests on the time of main luminous zone and the chance that increases the charge carrier recombination luminescence, and promote luminous efficacy.
In addition, in this exemplifying embodiment, the height that the height of the magnetosphere 31,32 of magnetic component can be no more than platform M is to avoid shading.Example as shown in Figure 4 is an example with the height of magnetosphere 31,32 and the height such as height of groove 224.Because the adjacent multiple quantum trap layer 223 that is arranged at of magnetic component; And multiple quantum trap layer 223 is main luminous zone; So be provided with under the condition, magnetic force can cause stronger influence in main luminous zone for charge carrier, so stronger magnetic force can more effectively influence the motion path of charge carrier; Increase the chance of charge carrier recombination luminescence, and promote luminous efficacy.
Please with reference to shown in Figure 5, in the photoelectric cell 2b of this example, photoelectric cell 2b comprises photoelectricity lamination 20 and magnetic component 30.Magnetic component 30 is arranged in the photoelectricity lamination 20, and between second electrode 24 and epitaxial loayer 22, at this, magnetic component 30 is embedded in the current-diffusion layer 28, and be positioned at second electrode 24 under, and magnetic component 30 and second electrode 24 are overlapped at least.Because magnetic component 30 and second electrode 24 are all the shading material usually, overlap at least through making magnetic component 30 and second electrode 24, can reduce the area that light that light-emitting diode sends is covered, with minimizing shading generation.With Fig. 5 is example, magnetic component 30 be positioned at second electrode 24 under, and cover fully, so magnetic component 30 can't cause extra shaded effect by 24 at second electrode.
Certainly; Except the example of above-mentioned magnetic component 30 and be provided with the position; Magnetic component 30 can have other to change example and the position is set; For example magnetic component 30 can comprise at least three magnetospheres, magnetic component 30 can be arranged on the photoelectricity lamination or epitaxial loayer 22 in or magnetic component 30 can be arranged at any side of four sides of photoelectricity lamination 20, thus magnetic component 30 X, Y and/or Z-direction can be provided magnetic force to photoelectricity lamination 20.
In addition, the present invention does not limit the shape of magnetic component 30, and it can for example be strip, multiple spot shape, discontinuously arranged shape or other geometries.Below illustrate with Fig. 6 A to Fig. 6 C.
Fig. 6 A to Fig. 6 C is the schematic top plan view of photoelectric cell 2c to 2e.Shown in Fig. 6 A, magnetic component 30 is between first electrode 23 and second electrode 24, and magnetic component 30 is elongated, and its long axis direction is with vertical with the imaginary line of second electrode 24 through first electrode 23.30 generations of magnetic component are Y direction (pointing out the paper direction) through the magnetic field of photoelectricity lamination.In this, magnetic component 30 is an example to be embedded within the photoelectricity lamination 20, and certainly, magnetic component 30 also can be positioned on the photoelectricity lamination 20 or the adjacent photoelectricity lamination 20 that is arranged at.
Shown in Fig. 6 B; Magnetic component 30 is between first electrode 23 and second electrode 24; Magnetic component 30 is discontinuously arranged strip and comprises three magnetospheres, and the magnetospheric long axis direction of these magnetospheric centres is roughly with parallel through the imaginary line of first electrode 23 and second electrode 24.Through three magnetospheres produce reciprocation respectively through the magnetic field of photoelectricity lamination, can let the change effect of motion path of motion charge carrier more remarkable.
Shown in Fig. 6 C, magnetic component 30 is point-like and is distributed in the photoelectricity lamination 20.The magnetic component of each point-like all forms a little magnetic field, and the reciprocation in these magnetic fields can make the motion charge carrier that the motion path that is different from Fig. 6 B example shown is arranged.
Through the magnetic component of difformity or distribution, can produce the electric field of varying strength or direction, the motion charge carrier being produced different prolongation effects, and then increase the application of magnetic component.
In sum; Photoelectric cell of the present invention is through the setting of magnetic component; Magnetic component can produce the magnetic field through the photoelectricity lamination, and then makes charge carrier in the motion in the photoelectricity lamination receive Hall effect (Hall effect) and change its motion path and promote photoelectricity usefulness.For example as far as light-emitting diode; Utilize Hall effect to make the motion charge carrier generation effect of photoelectricity lamination; Change its direction of motion; And then prolong the motion path of charge carrier and reach electric current diffusion purpose or increase that charge carrier rests on the time of main luminous zone and the chance that increases the charge carrier recombination luminescence, and promote luminous efficacy.
The above is merely illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be included in the claim its equivalent modifications of carrying out or change.
Claims (22)
1. photoelectric cell comprises:
The photoelectricity lamination; And
Magnetic component is arranged in this photoelectricity lamination or adjacently is arranged at this photoelectricity lamination and produces magnetic field through this photoelectricity lamination.
2. photoelectric cell as claimed in claim 1, wherein this photoelectric cell is a light-emitting diode.
3. photoelectric cell as claimed in claim 1, wherein this magnetic component be positioned under this photoelectricity lamination or on.
4. photoelectric cell as claimed in claim 1, wherein this photoelectricity lamination has substrate and epitaxial loayer, and this epitaxial loayer is arranged on this substrate.
5. photoelectric cell as claimed in claim 4, wherein this photoelectricity lamination also has current-diffusion layer and is arranged on this epitaxial loayer, and this magnetic component is embedded in this current-diffusion layer.
6. photoelectric cell as claimed in claim 4, wherein this epitaxial loayer has at least one groove so that this epitaxial loayer forms platform, and this magnetic component is positioned at this groove.
7. photoelectric cell as claimed in claim 6, wherein the height of this magnetic component is no more than the height of this platform.
8. photoelectric cell as claimed in claim 6, wherein this epitaxial loayer has the multiple quantum trap layer, this multiple quantum trap layer of this magnetic component next-door neighbour.
9. photoelectric cell as claimed in claim 6, wherein this magnetic component has two magnetospheres, and these two magnetospheres lay respectively at the both sides of this platform.
10. photoelectric cell as claimed in claim 4; Wherein this photoelectricity lamination also has first electrode and second electrode; This first electrode is arranged in the groove of this epitaxial loayer, and this second electrode is arranged on this epitaxial loayer, and this magnetic component is between this second electrode and this epitaxial loayer.
11. photoelectric cell as claimed in claim 10, wherein this magnetic component be positioned at this second electrode under.
12. photoelectric cell as claimed in claim 11, wherein this magnetic component and this second electrode are overlapped at least.
13. photoelectric cell as claimed in claim 1, wherein this magnetic component comprises iron, cobalt, nickel or manganese.
14. photoelectric cell as claimed in claim 1, wherein this magnetic component comprises high reflecting material.
15. photoelectric cell as claimed in claim 1, wherein this magnetic component is strip, multiple spot shape or discontinuously arranged shape.
16. a photoelectric cell comprises:
The photoelectricity lamination has substrate and epitaxial loayer, and this epitaxial loayer is arranged on this substrate, and this epitaxial loayer has at least one groove so that this epitaxial loayer forms platform; And
Magnetic component is positioned at this groove of this epitaxial loayer, produces magnetic field through this photoelectricity lamination.
17. photoelectric cell as claimed in claim 16, wherein the height of this magnetic component is no more than the height of this platform.
18. photoelectric cell as claimed in claim 16, wherein this epitaxial loayer has the multiple quantum trap layer, this multiple quantum trap layer of this magnetic component next-door neighbour.
19. photoelectric cell as claimed in claim 16, wherein this magnetic component has two magnetospheres, and these two magnetospheres lay respectively at the both sides of this platform.
20. a photoelectric cell comprises:
The photoelectricity lamination has substrate and epitaxial loayer, and this epitaxial loayer is arranged on this substrate, and this photoelectricity lamination also has first electrode and second electrode, and this first electrode is arranged in the groove of this epitaxial loayer, and this second electrode is arranged on this epitaxial loayer; And
Magnetic component is arranged in this photoelectricity lamination, and between this second electrode and this epitaxial loayer, produces magnetic field through this photoelectricity lamination.
21. photoelectric cell as claimed in claim 20, wherein this magnetic component be positioned at this second electrode under.
22. photoelectric cell as claimed in claim 21, wherein this magnetic component and this second electrode are overlapped at least.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099141090 | 2010-11-26 | ||
| TW99141090A TW201222876A (en) | 2010-11-26 | 2010-11-26 | Photoelectric device |
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| Publication Number | Publication Date |
|---|---|
| CN102479893A true CN102479893A (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106065694A Pending CN102479893A (en) | 2010-11-26 | 2010-12-27 | Optoelectronic component |
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| CN (1) | CN102479893A (en) |
| TW (1) | TW201222876A (en) |
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| CN105047771A (en) * | 2015-07-10 | 2015-11-11 | 厦门市三安光电科技有限公司 | Nitride light emitting diode |
| CN105226153A (en) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode with high expansion effect |
| CN105304771A (en) * | 2015-10-26 | 2016-02-03 | 厦门乾照光电股份有限公司 | Manufacture method of light emitting diode having high extension effect |
| CN106328773A (en) * | 2016-08-29 | 2017-01-11 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode and manufacturing method thereof |
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| KR102427641B1 (en) * | 2015-09-16 | 2022-08-02 | 삼성전자주식회사 | Semiconductor light emitting device |
| CN105226153A (en) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode with high expansion effect |
| CN105304771A (en) * | 2015-10-26 | 2016-02-03 | 厦门乾照光电股份有限公司 | Manufacture method of light emitting diode having high extension effect |
| CN105304771B (en) * | 2015-10-26 | 2018-01-16 | 厦门乾照光电股份有限公司 | A kind of preparation method of the light emitting diode with high expansion effect |
| CN106328773A (en) * | 2016-08-29 | 2017-01-11 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode and manufacturing method thereof |
| CN106328773B (en) * | 2016-08-29 | 2018-11-20 | 厦门市三安光电科技有限公司 | A kind of iii-nitride light emitting devices and preparation method thereof |
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