CN106328773B - A kind of iii-nitride light emitting devices and preparation method thereof - Google Patents
A kind of iii-nitride light emitting devices and preparation method thereof Download PDFInfo
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- CN106328773B CN106328773B CN201610739694.XA CN201610739694A CN106328773B CN 106328773 B CN106328773 B CN 106328773B CN 201610739694 A CN201610739694 A CN 201610739694A CN 106328773 B CN106328773 B CN 106328773B
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 26
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 6
- 230000006835 compression Effects 0.000 claims description 12
- 238000007906 compression Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 5
- 239000013013 elastic material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910002546 FeCo Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 3
- 229910019974 CrSi Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical group 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 8
- 239000002131 composite material Substances 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002077 nanosphere Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention discloses a kind of iii-nitride light emitting devices and preparation method thereof, the composite construction that layer occurs for stress control layer/reflecting layer/electromagnetic field is inserted into p-type nitride and N-type nitride, when by electromagnetic field layer occurs for electric current, because electromagnetic induction generates magnetic field, proof stress control layer generates stress, to regulate and control the stress types and size that multiple quantum wells is received, improve the o light ratio of light emitting diode and the carrier transition combined efficiency of Quantum Well, improving luminous efficiency and improvement efficiency droop effect.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, especially a kind of iii-nitride light emitting devices and preparation method thereof.
Background technique
Now, light emitting diode（LED）, especially iii-nitride light emitting devices are because of its higher luminous efficiency, common
Lighting area, which has obtained, to be widely applied.Group III-nitride light emitting diode is uniaxial medium crystal, and there are two for wave equation
The different solution of kind, a kind of ordinary ray along optical axis, abbreviation o light (Ordinary Light), electric field E is vertical with optical axis
E⊥c；The special ray that another vertical optical axis is propagated, abbreviation e light (Extraordinary), electric field E E ∥ parallel with optical axis
c.O light is electronics from conduction band bottom to the transition of heavy hole band and light hole band, and e light is electronics from conduction band bottom to crystal field splitting
The transition of hole band out.For group III-nitride light emitting diode, the luminous predominantly electronics of material is from conduction band bottom to valence band
The hole transition on top is compound, and since group III-nitride is there are optical anisotropy, the light for being parallel to c-axis is not easy to be emitted.
For iii-nitride light emitting devices in the case where electric current flows into, electron injection can make lattice dilatation, meanwhile, fuel factor meeting
The stress of substrate and epitaxial layer is set to change, so that the compression for being subject to it becomes smaller（Bibliography：Scientific
Reports, 5:17227; DOI: 10.1038/srep17227）.With the rising of Injection Current, compression is gradually decreased to
Zero, and become tensile stress, and along with the sharply decline of luminous efficiency.In order to obtain higher luminous efficiency, improve
Efficiency Droop effect, it is necessary to be lifted at the compression of iii-nitride light emitting devices under injection condition.
Summary of the invention
In order to solve the above technical problems, it is an object of the invention to：A kind of iii-nitride light emitting devices and its production are provided
Method is inserted into the composite construction that layer occurs for stress control layer/reflecting layer/electromagnetic field in p-type nitride and N-type nitride,
When by electromagnetic field layer occurs for electric current, because electromagnetic induction generates magnetic field, proof stress control layer generates stress, to regulate and control volume
The stress types and size that sub- trap is received improve the o light ratio of light emitting diode and the carrier transition combined efficiency of Quantum Well, mention
It rises luminous efficiency and improves efficiency droop effect.
According to the first aspect of the invention：A kind of iii-nitride light emitting devices successively include substrate, buffer layer, N-type nitridation
Object, multiple quantum wells and p-type nitride, it is characterised in that：Stress Control is inserted into the p-type nitride and N-type nitride
The composite construction of layer composition occurs for layer/reflecting layer/electromagnetic field.
Reflecting layer is used to prevent the light that layer occurs for electromagnetic field and Stress Control layer material absorbs multiple quantum wells sending, works as electric current
It flows through electromagnetic field to occur to cause electromagnetic induction effect when layer, generates magnetic field；Magnetic field proof stress control layer generates stress, to adjust
The stress types and size that control multiple quantum wells is received, the carrier transition of the o light ratio and Quantum Well that improve light emitting diode are compound
Efficiency, improving luminous efficiency and improvement efficiency droop effect.
Further, the electromagnetic field generation layer causes electromagnetic induction to generate magnetic field with the electric current injection of light emitting diode,
The magnetic material of layer is occurred by electromagnetism for the size in the magnetic field and Injection Current size is controlled.
Further, the position that stress control layer is inserted into the p-type nitride and N-type nitride corresponds, stress
Control layer material is magnetoelastic material, and when by magnetic fields, lattice constant can change, to generate tensile stress or pressure
Stress.
Further, the stress control layer with a thickness of 10 ~ 900nm, preferably 500nm.
Further, the material in the reflecting layer is the combination of Al, DBR, ODR or three of the above, preferably DBR.
Further, it is magnetic material that layer, which occurs, for the electromagnetic field, includes Ni, Co, Mn, FeCo, Fe3O4、Cr2O3、
Fe2The nanosphere of the simple substance such as CrSi or compound, size are 10 ~ 900nm, preferably 200nm.
According to the second aspect of the invention：A kind of production method of iii-nitride light emitting devices, comprises the steps of：
（1）Successively epitaxial growth buffer, N-type nitride form the first epitaxial wafer on substrate；
（2）First epitaxial wafer is taken out into reaction chamber, the first channel is etched on N-type nitride, is then sequentially depositing electricity
Layer, redeposited reflecting layer and magnetoelastic material occur for magnetic field, form the first template；
（3）First template is reentered into MOCVD reaction chamber, secondary epitaxy is carried out and grows N-type nitride, multiple quantum wells, P
Type nitride forms the second epitaxial wafer；
（4）Second epitaxial wafer is taken out into reaction chamber, etches the second channel, is then sequentially depositing stress control layer, reflection
Layer occurs for layer and electromagnetic field, and the coordinate one-to-one correspondence of the channel and the first channel forms the second template；
（5）Second template is reentered into MOCVD reaction chamber, epitaxial growth p-type nitride three times is carried out, is formed final
Third epitaxial wafer.
Further, first channel, the second channel depth be 100 ~ 1000nm, length be 1 ~ 10 μm, width 1
~10μm 。
Detailed description of the invention
Fig. 1 is the schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 2 be the embodiment of the present invention iii-nitride light emitting devices from conventional light emitting diodes under the different functions of current
Stress difference compares figure.
It illustrates：100：Substrate, 101：Buffer layer, 102：N-type nitride, 103：Electromagnetic field generation layer, 104：Reflection
Layer, 105：Stress control layer, 106：Multiple quantum wells, 107：P-type layer.
Specific embodiment
A kind of iii-nitride light emitting devices proposed by the invention successively include substrate 100, buffer layer 101, N-type nitridation
The composite construction of layer 105, multiple quantum wells 106, p-type nitride occur for object 102,103/ reflecting layer of stress control layer, 104/ electromagnetic field
107, the composite construction that layer occurs for stress control layer/DBR/ electromagnetic field is inserted into p-type nitride 107 and N-type nitride 102,
Reflecting layer 104 generates electromagnetic induction effect for preventing electromagnetic field from layer extinction occurs, when electric current flows through when layer 105 occurs for electromagnetic field
It answers, generates magnetic field；Magnetic field proof stress control layer 103 generates stress, thus regulate and control the stress types and size that multiple quantum wells is received,
Improve the o light ratio of light emitting diode and the carrier transition combined efficiency of Quantum Well, improving luminous efficiency and improvement
efficiency droop。
Firstly, successively epitaxial growth substrate 100, buffer layer 101, N-type nitride 102 are formed in Sapphire Substrate 100
First epitaxial wafer；Then, the first epitaxial wafer is taken out, the first channel is etched on N-type nitride 102, depth is 1 μm, long
Degree is 2 μm, and width is 2 μm, and layer, the magnetic of redeposited DBR and 500nm occur for the electromagnetic field for depositing 200nmFeCo nanosphere respectively
Elastic material is caused, as stress control layer 103, forms the first template；Then, the first template is reentered into MOCVD reaction chamber,
Secondary epitaxy is carried out, continued growth N-type nitride covers 104/ electromagnetic field of stress control layer 103/DBR reflectivity and layer 105 occurs
Composite construction, continued growth multiple quantum wells 106 and p-type nitride 107 form the second epitaxial wafer；Then, by the second epitaxial wafer
Taking-up etches the second channel, and depth is 1 μm, and length is 2 μm, and width is 2 μm, and the mangneto of 500nm is sequentially depositing on channel
Layer 105 occurs for the electromagnetic field of the FeCo nanosphere of the stress control layer 103 of elastic material, the reflecting layer DBR 104 and 200nm partial size,
Form the second template；Finally, the second template is reentered into MOCVD reaction chamber, extension continued growth p-type nitride three times is carried out
107, cover the composite construction that layer 105 occurs for 104/ electromagnetic field of the reflecting layer stress control layer 103/DBR.
When electric current flows through electromagnetic field, and layer occurs, magnetic field is generated, and magnetic field enhances with the rising of electric current, controls mangneto
Elastic material generates compression, to offset the reduction because of the compression that junction temperature of light emitting diode rises and electric current injection generates, such as
Shown in Fig. 2；When Injection Current is less than 300mA, reduced by the compression that the compression that electromagnetic field generates is less than light emitting diode
Amplitude, the compression that the multiple quantum wells of light emitting diode is subject to is on a declining curve；When Injection Current is more than 300mA, by electricity
The compression that magnetic field generates is greater than the amplitude of the compression reduction of light emitting diode, the pressure that the multiple quantum wells of light emitting diode is subject to
Stress is in rising trend.The carrier transition of light emitting diode can be improved in the compression of rising o light ratio and Quantum Well is answered
Close efficiency, improving luminous efficiency and improvement efficiency droop.
The above embodiments are only used to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case where not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, therefore all equivalent
Technical solution also belong to scope of the invention, scope of patent protection of the invention should regard Claims scope restriction.
Claims (9)
1. a kind of iii-nitride light emitting devices successively include substrate, N-type nitride, multiple quantum wells and p-type nitride, spy
Sign is：It is inserted into stress control layer/reflecting layer/electromagnetic field in the p-type nitride and N-type nitride, answering for layer composition occurs
Structure is closed, the position that stress control layer is inserted into the p-type and N-type nitride corresponds, and Stress Control layer material is mangneto
Elastic material, when by magnetic fields, lattice constant can change, to generate tensile stress or compression to multiple quantum wells.
2. a kind of iii-nitride light emitting devices according to claim 1, it is characterised in that：The reflecting layer is for preventing electricity
Layer occurs for magnetic field and Stress Control layer material absorbs the light that multiple quantum wells issues.
3. a kind of iii-nitride light emitting devices according to claim 1, it is characterised in that：Layer occurs for the electromagnetic field with hair
The electric current injection of optical diode causes electromagnetic induction to generate magnetic field, and the magnetic material and note of layer are occurred by electromagnetism for the size in the magnetic field
Enter size of current control.
4. a kind of iii-nitride light emitting devices according to claim 1, it is characterised in that：The thickness of the stress control layer
For 10 ~ 900nm.
5. a kind of iii-nitride light emitting devices according to claim 1, it is characterised in that：The material in the reflecting layer is Al
Or DBR or ODR or aforementioned combinatorial.
6. a kind of iii-nitride light emitting devices according to claim 1, it is characterised in that：Layer occurs for the electromagnetic field
Magnetic material selects Ni or Co or Mn or FeCo or Fe3O4Or Cr2O3Or Fe2CrSi。
7. a kind of iii-nitride light emitting devices according to claim 6, it is characterised in that：The size of the magnetic material is
10~900nm。
8. a kind of production method of iii-nitride light emitting devices, comprises the steps of：
（1）Successively epitaxial growth buffer, N-type nitride form the first epitaxial wafer on substrate；
（2）First epitaxial wafer is taken out into reaction chamber, the first channel is etched on N-type nitride, is then sequentially depositing electromagnetic field
Layer, redeposited reflecting layer and magnetoelastic material occurs, forms the first template；
（3）First template is reentered into MOCVD reaction chamber, secondary epitaxy is carried out and grows N-type nitride, multiple quantum wells, p-type nitrogen
Compound forms the second epitaxial wafer；
（4）By the second epitaxial wafer take out reaction chamber, etch the second channel, be then sequentially depositing stress control layer, reflecting layer and
Layer occurs for electromagnetic field, and the coordinate one-to-one correspondence of the channel and the first channel forms the second template；
（5）Second template is reentered into MOCVD reaction chamber, epitaxial growth p-type nitride three times is carried out, forms final third
Epitaxial wafer.
9. a kind of production method of iii-nitride light emitting devices according to claim 8, it is characterised in that：First ditch
Road, the second channel depth be 100 ~ 1000nm, length be 1 ~ 10 μm, width be 1 ~ 10 μm.
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| CN109957392A (en) * | 2019-02-27 | 2019-07-02 | 天津大学 | The preparation of the luminous bar of magnetic stress and driving method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479893A (en) * | 2010-11-26 | 2012-05-30 | 奇力光电科技股份有限公司 | Optoelectronic component |
| CN105047771A (en) * | 2015-07-10 | 2015-11-11 | 厦门市三安光电科技有限公司 | Nitride light emitting diode |
| CN105098000A (en) * | 2014-05-16 | 2015-11-25 | 北京纳米能源与系统研究所 | Composite structure of regulating LED luminous intensity through magnetic field, and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479893A (en) * | 2010-11-26 | 2012-05-30 | 奇力光电科技股份有限公司 | Optoelectronic component |
| CN105098000A (en) * | 2014-05-16 | 2015-11-25 | 北京纳米能源与系统研究所 | Composite structure of regulating LED luminous intensity through magnetic field, and manufacturing method |
| CN105047771A (en) * | 2015-07-10 | 2015-11-11 | 厦门市三安光电科技有限公司 | Nitride light emitting diode |
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Effective date of registration: 20231016 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |