CN103137808A - Gallium nitride light-emitting diode (LED) with low-temperature n-type inserted layer and preparation method thereof - Google Patents
Gallium nitride light-emitting diode (LED) with low-temperature n-type inserted layer and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a gallium nitride light-emitting diode (LED) comprising at least one low-temperature inserted layer. The at least one inserted layer is AlxGal-xN, wherein 0<=x<=1 or InyAl1-yN, wherein 0<=y<=1 or AlaInbGal-a-bN, wherein 0<=a<1, and 0<=b<1. The growth temperature of the inserted layer is 500-1000 DEG C. The LED can reduce the stress in an InGaN/GaN multiple quantum well, increase luminous intensity and obviously solve the problem that the efficiency is descended under the condition of bulk current injection.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of GaN series LED with low temperature N-shaped insert layer and preparation method thereof.
Background technology
At present III-V family photoelectric semiconductor material is described as third generation semi-conducting material.And the GaN series LED owing to can produce the light-emitting diode (referred to as " LED ") of various coloured light (blue light or the purple light that especially need high energy gap) by the composition of controlling material, and becomes the emphasis of industry research.
Semi-conducting material take GaN as the basis or the epitaxial growth of device be the main MOCVD technology that adopts at present.In the technique of utilizing MOCVD technology growth nitride-based semiconductor (GaN, AlN, InN and their alloy nitride), due to not with the backing material of GaN Lattice Matching, therefore usually adopt sapphire to carry out heteroepitaxy as substrate.Yet, have larger lattice mismatch (13.8%) and the difference of thermal coefficient of expansion between sapphire and nitride-based semiconductor, so growth does not have the high-quality nitride-based semiconductor of be full of cracks, surfacing very difficult.The most effective epitaxial growth method adopts two step epitaxial growth methods (referring to H.Amano usually at present, N.Sawaki and Y.Toyoda etc., " use the metal organic vapor growth of the high-quality GaN film of AlN resilient coating ", Appl.Phys.Lett.48 (5), 353 (1986); S.Nakanura etc., " the high-quality p-type GaN with GaN resilient coating: the growth of Mg film ", Jpn.J.Appl.Phys.30, L1708 (1991); And Chinese invention patent application CN1508284A), the method mainly comprises the steps: first the very thin nucleating layer of (as 500 ℃) growth one deck at low temperatures; Then heat up and anneal, the unadulterated GaN resilient coating of direct growth on this nucleating layer; Follow on this resilient coating growing n-type GaN ohmic contact layer; Then growing InGaN/GaN Multiple Quantum Well (MQWs) active layer at the temperature of 700 ℃ to 850 ℃; Build at the GaN quantum and follow under the high temperature of 1000 ℃ of left and right after growth finishes, the growing p-type AlGaN electronic barrier layer; Last growing p-type GaN ohmic contact layer is made p-type ohmic contact transparency electrode and N-shaped Ohm contact electrode.
Yet above-mentioned LED growing technology exists the high and luminous intensity of forward operating voltage there is no the defective that significantly strengthens.Cause the basic reason of the problems referred to above to be that in GaN epitaxial loayer and InGaN/GaN Multiple Quantum Well active area, existence has very high stress, the existence of these stress has reduced the radiation recombination probability of charge carrier on the one hand; On the other hand, due to the existence of stress, cause n district charge carrier to overflow in a large number and directly enter the p district, thereby cause that when large electric current injects, radiation recombination efficiency significantly reduces (referring to Appl.Phys.Lett, 94,231123 (2009)).Therefore, the stress that effectively reduces in epitaxial loayer is particularly important to the high-power light-emitting device.
Summary of the invention
For addressing the above problem, the invention provides a kind of GaN series LED.Described GaN series LED provided by the invention, it comprises:
Substrate;
The gallium nitride nucleating layer, this gallium nitride nucleating layer is produced on substrate;
Resilient coating, this resilient coating are produced on described gallium nitride nucleating layer;
The N-shaped contact layer, this N-shaped contact layer is produced on this resilient coating, and this N-shaped contact layer is made of the N-shaped gallium nitride;
It is inner that N-shaped insert layer, this N-shaped insert layer are produced on the N-shaped contact layer, and it is the N-shaped contact layer up and down;
Active luminescent layer, this activity luminescent layer is produced on the N-shaped contact layer and covers the part surface of described N-shaped contact layer;
Negative electrode, this negative electrode are produced on the N-shaped contact layer not by on the surface of described active luminescent layer covering, and it is positioned at the below of N-shaped insert layer;
The p-type electronic barrier layer, this p-type electronic barrier layer is produced on active luminescent layer;
The p-type contact layer, this p-type contact layer is produced on the p-type electronic barrier layer, and this p-type contact layer is made of the p-type gallium nitride;
Positive electrode, this positive electrode is produced on the p-type contact layer.
The invention also discloses a kind of manufacture method of GaN series LED, it comprises:
Step 1, make the gallium nitride nucleating layer on substrate;
Step 2, make resilient coating on described gallium nitride nucleating layer;
Step 3, make the N-shaped contact layer on resilient coating;
Step 4, in N-shaped contact layer internal production N-shaped insert layer;
Step 5, make active luminescent layer and cover the part surface of described N-shaped contact layer on N-shaped contact layer 14;
Step 6, make aluminum gallium nitride p-type electronic barrier layer on active luminescent layer;
Step 7, make gallium nitride p-type contact layer on the p-type electronic barrier layer;
Step 8, make negative electrode on the surface that the N-shaped contact layer is not covered by described active luminescent layer, and described negative electrode is positioned at the below of described N-shaped insert layer;
Step 9, make positive electrode on the p-type contact layer, complete the making of GaN series LED.
The present invention proposes the stress during one or more layers low temperature insert layer of insertion reduces epitaxial loayer in N-shaped GaN contact layer.GaN series LED provided by the invention can be regulated the stress distribution in epitaxial loayer, can reduce again the dislocation density in epitaxial loayer simultaneously, makes the luminous intensity of light-emitting diode increase.
Description of drawings
Fig. 1 is the structural representation that has GaN series LED in the present invention;
Fig. 2 is the flow chart of GaN series LED manufacture method in the present invention;
Fig. 3 is forward Injection Current and the luminous intensity I-L curve comparison diagram of GaN series LED in prior art and the present invention;
Fig. 4 is the luminous efficiency comparison diagram of GaN series LED under large electric current injects in prior art and the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
See also shown in Figure 1ly, the invention provides a kind of GaN series LED, it comprises:
Gallium nitride nucleating layer 12, this gallium nitride nucleating layer 12 is produced on substrate 11.Growth parameter(s) comprises: 500 ℃ to g00 ℃ of reaction temperatures, reaction chamber pressure 200 be to 500Torr, carrier gas flux 10-30 liter/min clock, and TMGa flow rate 20-250 micromole/minute, ammonia flow 20-80 moles/min, growth time 1-10 minute;
One N-shaped contact layer 14, this N-shaped contact layer 14 is produced on resilient coating 13, and this N-shaped contact layer 14 is made of the N-shaped gallium nitride.Growth parameter(s) comprises: reaction temperature 950-1150 ℃, and reaction chamber pressure 76-250Torr, carrier gas flux 5-20 liter/min clock, TMGa flow rate 80-400 micromole/minute, ammonia flow 200-800 moles/min, silane flow rate 0.2-2.0 nanomole/minute, growth time 10-40 minute;
Wherein N-shaped low temperature insert layer 15 can be that one deck can be also that multilayer is inserted in the middle of N-shaped contact layer 14 simultaneously;
N-shaped contact layer 14 growth conditionss that wherein are positioned at N-shaped low temperature insert layer 15 tops are consistent with the growth conditions of the N-shaped contact layer 14 that is positioned at N-shaped low temperature insert layer 15 bottoms, and the thickness that is positioned at the N-shaped contact layer 14 on N-shaped low temperature insert layer 15 tops is 10-1000nm;
The present invention has obtained by in inner one or more layers N-shaped low temperature insert layer 15 of inserting of N-shaped contact layer 14 the GaN series LED that luminous intensity and light extraction efficiency obtain larger raising.Main cause is following two aspects:
At first, in inner one or more layers low temperature insert layers 15 of inserting of N-shaped contact layer 14, because the growth temperature of this layer is lower, the surface migration of atom very a little less than, so this layer tends to three-dimensional island growth.Because the island growth particle is larger, short texture, and near InGaN/GaN Multiple Quantum Well active area, so in epitaxial loayer particularly the stress in the quantum well active area be released at this layer.
Secondly, continue high growth temperature N-shaped contact layer 14 after N-shaped low temperature insert layer 15, because the growth temperature of this layer is higher, the surface atom migration distance is larger, tends to the two-dimensional layer growth.Namely occur by the three-dimensional island growth of N-shaped low temperature insert layer 15 transition process to the two-dimensional layer growth of N-shaped contact layer 14.In this transition process, those are parallel to the threading dislocation of outer layer growth direction originally, because the transformation along with growth pattern bends, and interact and to cause finally burying in oblivion, thereby make the dislocation density in epitaxial loayer greatly reduce.This is also another basic reason that causes lumination of light emitting diode intensity of the present invention to be increased.
Active luminescent layer 16, this activity luminescent layer 16 is produced on N-shaped contact layer 14 and covers the part surface of described N-shaped contact layer 14, and described active luminescent layer 16 is made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer 161 and gallium nitride thin layer 162 interaction cascadings form.Growth parameter(s) comprises: GaN thin layer (namely building layer 162): reaction temperature 700-900 ℃, reaction chamber pressure 100-500Torr, carrier gas flux 5-20 liter/min clock, ammonia flow 200-800 moles/min, TMGa flow rate 0.1-1.0 micromole/minute, silane flow rate 0-2.0 nanomole/minute, time 0.1-5 minute; InGaN thin layer (being trap layer 161): reaction temperature 700-850 ℃, reaction chamber pressure 100-500Torr, carrier gas flux 5-20 liter/min clock, ammonia flow 200-800 moles/min, TMGa flow rate 0.1-1.0 micromole/minute, trimethyl indium flow 10-50 micromole/minute, time 0.1-5 minute; The Multiple Quantum Well periodicity is 1 to 20;
P-type electronic barrier layer 17, this p-type electronic barrier layer 17 are produced on active luminescent layer 16, and this p-type electronic barrier layer 17 is made of aluminum gallium nitride.The thickness of described p-type electronic barrier layer 17 is 10-50nm, and the lower surface of described p-type electronic barrier layer 17 contacts with gallium nitrogen thin layer 162 in described active luminescent layer 16.Growth parameter(s) comprises: reaction temperature 700-1000 ℃, reaction chamber pressure 50-200Torr, carrier gas flux 5-20 liter/min clock, ammonia flow 100-400 moles/min, trimethyl aluminium flow 20-100 micromole/minute, TMGa flow rate 80-200 micromole/minute, two luxuriant magnesium flows be the 150-400 nanomole/minute, time 1-10 minute.
P-type contact layer 18, this p-type contact layer 18 is produced on p-type electronic barrier layer 17, and this p-type contact layer 18 is made of the p-type gallium nitride.Growth parameter(s) comprises: reaction temperature 950-1100 ℃, and reaction chamber pressure 200-500Torr, carrier gas flux 5-20 liter/min clock, ammonia flow 200-800 moles/min, TMGa flow rate 80-400 micromole/minute, two luxuriant magnesium flows be the 0.5-5 micromole/minute, time 10-50 minute.
Fig. 2 shows the manufacture method of GaN series LED in the present invention.As shown in Figure 2, the invention also discloses a kind of manufacture method of GaN series LED.The manufacture method of the disclosed GaN series LED of one embodiment of the present invention comprises:
1) adopt high-purity N H3 to do the N source, the mist of high-purity H2 and N2 is done carrier gas, trimethyl gallium or triethyl-gallium are done the Ga source, trimethyl indium is done the In source, trimethyl aluminium is done the Al source, the N-shaped dopant is silane, and the p-type dopant is two luxuriant magnesium, makes (0001) crystal orientation sapphire (Al2O3) substrate 11;
2) make gallium nitride nucleating layer 12 on substrate 11, its reaction temperature is 500 ℃, reaction chamber pressure 200Torr, and 10 liter/mins of clocks of carrier gas flux, TMGa flow rate 20 micromoles/minute, ammonia flow 20 moles/min, growth time 1 minute;
3) make resilient coating 13 on nucleating layer 12,950 ℃ of reaction temperatures, reaction chamber pressure 76Torr, 5 liter/mins of clocks of carrier gas flux, TMGa flow rate be 80 micromoles/minute, ammonia flow is 200 moles/min, growth time 20 minutes;
4) make N-shaped contact layer 14,950 ℃ of reaction temperatures, reaction chamber pressure 76Torr on resilient coating 13,5 liter/mins of clocks of carrier gas flux, TMGa flow rate 80 micromoles/minute, ammonia flow 200 moles/min, silane flow rate 0.2 nanomole/minute, growth time 10 minutes;
5) be the N-shaped insert layer 15 of AlxGal-xN at N-shaped contact layer 14 internal production materials, 0≤x≤1 wherein, 500 ℃ of reaction temperatures, reaction chamber pressure 76Torr, 5 liter/mins of clocks of carrier gas flux, TMGa flow rate 80 micromoles/minute, trimethyl aluminium flow 20 micromoles/minute, ammonia flow 200 moles/min, silane flow rate 0.2 nanomole/minute, growth time 10 minutes, its thickness are 50nm; The detailed process of making N-shaped insert layer 15 is, first makes one deck N-shaped insert layer on N-shaped contact layer surface, then covers one deck N-shaped contact layer at this above the N-shaped insert layer, can make multilayer N-shaped insert layer with this;
6) make active luminescent layer 16 and cover the part surface of described N-shaped contact layer 14 on N-shaped contact layer 14, described active luminescent layer 16 is to be made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer 161 and gallium nitride thin layer 162 interaction cascadings form.When making GaN thin layer (namely building layer 162), 700 ℃ of reaction temperatures, reaction chamber pressure 100Torr, 5 liter/mins of clocks of carrier gas flux, ammonia flow 200 moles/min, TMGa flow rate 0.1 micromole/minute, silane flow rate 0 nanomole/minute, 0.1 minute time; When making InGaN thin layer (being trap layer 161), 700 ℃ of reaction temperatures, reaction chamber pressure 100Torr, 5 liter/mins of clocks of carrier gas flux, ammonia flow 200 moles/min, TMGa flow rate 0.1 micromole/minute, trimethyl indium flow 10 micromoles/minute, 0.1 minute time; The Multiple Quantum Well periodicity is 1;
7) make aluminum gallium nitride p-type electronic barrier layer 17 on active luminescent layer 16, its thickness is 10nm, and the lower surface of described p-type electronic barrier layer 17 contacts with gallium nitrogen thin layer 162 in described active luminescent layer 16,700 ℃ of reaction temperatures, reaction chamber pressure 50Torr, 5 liter/mins of clocks of carrier gas flux, ammonia flow 100 moles/min, trimethyl aluminium flow 20 micromoles/minute, TMGa flow rate 80 micromoles/minute, two luxuriant magnesium flows be 150 nanomoles/minute, 1 minute time;
8) make gallium nitride p-type contact layer 18 on p-type electronic barrier layer 17,950 ℃ of reaction temperatures, reaction chamber pressure 200Torr, 5 liter/mins of clocks of carrier gas flux, ammonia flow 200 moles/min, TMGa flow rate 80 micromoles/minute, two luxuriant magnesium flows be 0.5 micromole/minute, 10 minutes time;
9) make the negative electrode 19 that is formed by chromium platinum or titanium aluminium titanium on the surface that N-shaped contact layer 14 is not covered by described active luminescent layer 16; Described negative electrode 19 can be by the mode of deep etching, have at internal production on the N-shaped contact layer 14 of N-shaped insert layer 15 and carry out etching, until after there is no the N-shaped insert layer, make negative electrode thereon, its objective is in order to make the electric current that flows out from positive electrode 20 comprise that via each layer the N-shaped insert layer enters negative electrode 19;
10) make the positive electrode 20 that is formed by the chromium platinum on p-type contact layer 18, complete the making of GaN series LED.
The manufacture method of the disclosed GaN series LED of another preferred embodiment of the present invention comprises:
1) adopt high-purity N H3 to do the N source, the mist of high-purity H2 and N2 is done carrier gas, trimethyl gallium or triethyl-gallium are done the Ga source, trimethyl indium is done the In source, trimethyl aluminium is done the Al source, the N-shaped dopant is silane, and the p-type dopant is two luxuriant magnesium, makes (0001) crystal orientation sapphire (Al2O3) substrate 11;
2) make gallium nitride nucleating layer 12 on substrate 11, its reaction temperature is 800 ℃, reaction chamber pressure 500Torr, and 30 liter/mins of clocks of carrier gas flux, TMGa flow rate 250 micromoles/minute, ammonia flow 80 moles/min, growth time 10 minutes;
3) make resilient coating 13 on nucleating layer 12,1180 ℃ of reaction temperatures, reaction chamber pressure 250Torr, 20 liter/mins of clocks of carrier gas flux, TMGa flow rate be 400 micromoles/minute, ammonia flow is 800 moles/min, growth time 60 minutes;
4) make N-shaped contact layer 14,1150 ℃ of reaction temperatures, reaction chamber pressure 250Torr on resilient coating 13,20 liter/mins of clocks of carrier gas flux, TMGa flow rate 400 micromoles/minute, ammonia flow 800 moles/min, silane flow rate 2.0 nanomoles/minute, growth time 40 minutes;
5) be the N-shaped insert layer 15 of InyAl1-yN at N-shaped contact layer 14 internal production materials, 0≤y≤1 wherein, 1000 ℃ of reaction temperatures, reaction chamber pressure 200Torr, 20 liter/mins of clocks of carrier gas flux, trimethyl indium flow 50 micromoles/minute, trimethyl aluminium flow 100 micromoles/minute, ammonia flow 800 moles/min, silane flow rate 2.0 nanomoles/minute, growth time 40 minutes, its thickness are 100nm; The detailed process of making N-shaped insert layer 15 is, first makes one deck N-shaped insert layer on N-shaped contact layer surface, then covers one deck N-shaped contact layer at this above the N-shaped insert layer, can make multilayer N-shaped insert layer with this;
6) make active luminescent layer 16 and cover the part surface of described N-shaped contact layer 14 on N-shaped contact layer 14, described active luminescent layer 16 is to be made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer 161 and gallium nitride thin layer 162 interaction cascadings form.When making GaN thin layer (namely building layer 162), 900 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 1.0 micromoles/minute, silane flow rate 2.0 nanomoles/minute, 5 minutes time; When making InGaN thin layer (being trap layer 161), 850 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 1.0 micromoles/minute, trimethyl indium flow 50 micromoles/minute, 5 minutes time; The Multiple Quantum Well periodicity is 20;
7) make aluminum gallium nitride p-type electronic barrier layer 17 on active luminescent layer 16, its thickness is 50nm, and the lower surface of described p-type electronic barrier layer 17 contacts with gallium nitrogen thin layer 162 in described active luminescent layer 16,1000 ℃ of reaction temperatures, reaction chamber pressure 200Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 400 moles/min, trimethyl aluminium flow 100 micromoles/minute, TMGa flow rate 200 micromoles/minute, two luxuriant magnesium flows be 400 nanomoles/minute, 10 minutes time;
8) make gallium nitride p-type contact layer 18 on p-type electronic barrier layer 17,1100 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 400 micromoles/minute, two luxuriant magnesium flows be 5 micromoles/minute, 50 minutes time;
9) make the negative electrode 19 that is formed by chromium platinum or titanium aluminium titanium on the surface that N-shaped contact layer 14 is not covered by described active luminescent layer 16; Described negative electrode 19 can be by the mode of deep etching, have at internal production on the N-shaped contact layer 14 of N-shaped insert layer 15 and carry out etching, until after there is no the N-shaped insert layer, make negative electrode thereon, its objective is in order to make the electric current that flows out from positive electrode 20 comprise that via each layer the N-shaped insert layer enters negative electrode 19.
10) make the positive electrode 20 that is formed by the chromium platinum on p-type contact layer 18, complete the making of GaN series LED.
The manufacture method of the disclosed GaN series LED of another preferred embodiment of the present invention comprises:
1) adopt high-purity N H3 to do the N source, the mist of high-purity H2 and N2 is done carrier gas, trimethyl gallium or triethyl-gallium are done the Ga source, trimethyl indium is done the In source, trimethyl aluminium is done the Al source, the N-shaped dopant is silane, and the p-type dopant is two luxuriant magnesium, makes (0001) crystal orientation sapphire (Al2O3) substrate 11;
2) make gallium nitride nucleating layer 12 on substrate 11, its reaction temperature is 800 ℃, reaction chamber pressure 500Torr, and 30 liter/mins of clocks of carrier gas flux, TMGa flow rate 250 micromoles/minute, ammonia flow 80 moles/min, growth time 10 minutes;
3) make resilient coating 13 on nucleating layer 12,1180 ℃ of reaction temperatures, reaction chamber pressure 250Torr, 20 liter/mins of clocks of carrier gas flux, TMGa flow rate be 400 micromoles/minute, ammonia flow is 800 moles/min, growth time 60 minutes;
4) make N-shaped contact layer 14,1150 ℃ of reaction temperatures, reaction chamber pressure 250Torr on resilient coating 13,20 liter/mins of clocks of carrier gas flux, TMGa flow rate 400 micromoles/minute, ammonia flow 800 moles/min, silane flow rate 2.0 nanomoles/minute, growth time 40 minutes;
5) be AlaInbGal-a-bN at N-shaped contact layer 14 internal production materials, N-shaped insert layer 15,0≤a＜1 wherein, 0≤b＜1,800 ℃ of reaction temperatures, reaction chamber pressure 200Torr, 20 liter/mins of clocks of carrier gas flux, TMGa flow rate 400 micromoles/minute, trimethyl indium flow 50 micromoles/minute, trimethyl aluminium flow 100 micromoles/minute, ammonia flow 800 moles/min, silane flow rate 2.0 nanomoles/minute, growth time 40 minutes, its growth thickness are 80nm; The detailed process of making N-shaped insert layer 15 is, first makes one deck N-shaped insert layer on N-shaped contact layer surface, then covers one deck N-shaped contact layer at this above the N-shaped insert layer, can make multilayer N-shaped insert layer with this;
6) make active luminescent layer 16 and cover the part surface of described N-shaped contact layer 14 on N-shaped contact layer 14, described active luminescent layer 16 is to be made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer 161 and gallium nitride thin layer 162 interaction cascadings form.When making GaN thin layer (namely building layer 162), 900 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 1.0 micromoles/minute, silane flow rate 2.0 nanomoles/minute, 5 minutes time; When making InGaN thin layer (being trap layer 161), 850 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 1.0 micromoles/minute, trimethyl indium flow 50 micromoles/minute, 5 minutes time; The Multiple Quantum Well periodicity is 20;
7) make aluminum gallium nitride p-type electronic barrier layer 17 on active luminescent layer 16, its thickness is 50nm, and the lower surface of described p-type electronic barrier layer 17 contacts with gallium nitrogen thin layer 162 in described active luminescent layer 16,1000 ℃ of reaction temperatures, reaction chamber pressure 200Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 400 moles/min, trimethyl aluminium flow 100 micromoles/minute, TMGa flow rate 200 micromoles/minute, two luxuriant magnesium flows be 400 nanomoles/minute, 10 minutes time;
8) make gallium nitride p-type contact layer 18 on p-type electronic barrier layer 17,1100 ℃ of reaction temperatures, reaction chamber pressure 500Torr, 20 liter/mins of clocks of carrier gas flux, ammonia flow 800 moles/min, TMGa flow rate 400 micromoles/minute, two luxuriant magnesium flows be 5 micromoles/minute, 50 minutes time;
9) make the negative electrode 19 that is formed by chromium platinum or titanium aluminium titanium on the surface that N-shaped contact layer 14 is not covered by described active luminescent layer 16; Described negative electrode 19 can be by the mode of deep etching, have at internal production on the N-shaped contact layer 14 of N-shaped insert layer 15 and carry out etching, until after there is no the N-shaped insert layer, make negative electrode thereon, its objective is in order to make the electric current that flows out from positive electrode 20 comprise that via each layer the N-shaped insert layer enters negative electrode 19.
10) make the positive electrode 20 that is formed by the chromium platinum on p-type contact layer 18, complete the making of GaN series LED.
Figure 3 shows that forward Injection Current and the luminous intensity I-L curve comparison diagram of GaN series LED in prior art and the present invention.Wherein, abscissa is electric current, and ordinate is luminous intensity, and the square lines are the gallium nitride based LED with N-shaped low temperature insert layer 15 of the present invention; The triangle lines are the existing gallium nitride based LED that there is no N-shaped low temperature insert layer 15.By finding out in Fig. 3, compare with the LED of traditional structure, under same Injection Current condition, it is large that LED structure of the present invention has luminous intensity, the saturation current high.In the situation that guarantee that device technology is identical, the enhancing of luminous intensity illustrates that the internal quantum efficiency of light-emitting diode has obtained effective raising.
Figure 4 shows that the luminous efficiency comparison diagram of GaN series LED under large electric current injects in prior art and the present invention.Wherein, the carrier density of abscissa for injecting, ordinate is normalized external quantum efficiency.What round dot represented is the GaN series LED that has N-shaped low temperature insert layer according to of the present invention; Square is that available technology adopting InGaN/GaN superlattice are as the light-emitting diode of insert layer; Triangle representative be GaN series LED without any insert layer.As insert layer and do not have the light-emitting diode of N-shaped low temperature insert layer 15 to compare, result shows that the luminous efficiency of light-emitting diode under large electric current injects with low temperature insert layer 15 will be far above the LED of other two kinds of structures with traditional InGaN/GaN superlattice.This has benefited from the one hand low temperature insert layer 15 and has effectively reduced the stress distribution in the epitaxial loayer, and the threading dislocation density that can reduce in epitaxial loayer with this insert layer 15 again on the other hand is relevant.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. GaN series LED, it comprises:
Substrate;
The gallium nitride nucleating layer, this gallium nitride nucleating layer is produced on substrate;
Resilient coating, this resilient coating are produced on described gallium nitride nucleating layer;
The N-shaped contact layer, this N-shaped contact layer is produced on this resilient coating, and this N-shaped contact layer is made of the N-shaped gallium nitride;
It is inner that N-shaped insert layer, this N-shaped insert layer are produced on the N-shaped contact layer, and it is the N-shaped contact layer up and down;
Active luminescent layer, this activity luminescent layer is produced on the N-shaped contact layer and covers the part surface of described N-shaped contact layer;
Negative electrode, this negative electrode are produced on the N-shaped contact layer not by on the surface of described active luminescent layer covering, and it is positioned at the below of N-shaped insert layer;
The p-type electronic barrier layer, this p-type electronic barrier layer is produced on active luminescent layer;
The p-type contact layer, this p-type contact layer is produced on the p-type electronic barrier layer, and this p-type contact layer is made of the p-type gallium nitride;
Positive electrode, this positive electrode is produced on the p-type contact layer.
2. GaN series LED as claimed in claim 1 is characterized in that: described N-shaped insert layer be AlxGal-xN, InyAl1-yN and AlaInbGal-a-bN one of them, 0≤x≤1,0≤y≤1,0≤a＜1,0≤b＜1 wherein.
3. GaN series LED as claimed in claim 1, it is characterized in that: the growth temperature of described N-shaped insert layer is 500 ℃-1000 ℃, and its thickness is 50-100nm.
4. GaN series LED as claimed in claim 1, it is characterized in that: described N-shaped insert layer can be one or more layers structure.
5. GaN series LED as claimed in claim 1, it is characterized in that: described active luminescent layer is made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer and gallium nitride thin layer interaction cascading form.
6. GaN series LED as claimed in claim 5, it is characterized in that: the lower surface of described P type electronic barrier layer is the gallium nitride thin layer of described active luminescent layer, and it is made of aluminum gallium nitride.
7. GaN series LED as claimed in claim 1, its feature be, substrate 6H-SiC, 4H-SiC or lattice constant are made close to the monocrystalline oxide of nitride-based semiconductor.
8. GaN series LED as claimed in claim 1, its feature be, described N-shaped insert layer is the low temperature insert layer.
9. the manufacture method of a GaN series LED, it comprises:
Step 1, make the gallium nitride nucleating layer on substrate;
Step 2, make resilient coating on described gallium nitride nucleating layer;
Step 3, make the N-shaped contact layer on resilient coating;
Step 4, in N-shaped contact layer internal production N-shaped insert layer;
Step 5, make active luminescent layer and cover the part surface of described N-shaped contact layer on N-shaped contact layer 14;
Step 6, make aluminum gallium nitride p-type electronic barrier layer on active luminescent layer;
Step 7, make gallium nitride p-type contact layer on the p-type electronic barrier layer;
Step 8, make negative electrode on the surface that the N-shaped contact layer is not covered by described active luminescent layer, and described negative electrode is positioned at the below of described N-shaped insert layer;
Step 9, make positive electrode on the p-type contact layer, complete the making of GaN series LED.
10. method as claimed in claim 9, is characterized in that, described N-shaped insert layer is one or more layers, and is separated by the N-shaped contact layer between every layer; The growth temperature of described N-shaped insert layer is 500 ℃-1000 ℃ 800, and its thickness is 50-10080nm.
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| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN106711295A (en) * | 2016-11-24 | 2017-05-24 | 华灿光电（浙江）有限公司 | Growing method of GaN-based light emitting diode epitaxial wafer |
| CN113328016A (en) * | 2021-08-02 | 2021-08-31 | 至芯半导体(杭州)有限公司 | AlInGaN ultraviolet light-emitting device and preparation method thereof |
| CN113594314A (en) * | 2021-08-05 | 2021-11-02 | 江西新正耀光学研究院有限公司 | Structure of deep ultraviolet light emitting diode and preparation method thereof |
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| CN102064254A (en) * | 2010-11-10 | 2011-05-18 | 中国科学院半导体研究所 | High-quality gallium nitride light-emitting diode |
| US20110156001A1 (en) * | 2004-03-11 | 2011-06-30 | Chen Ou | Nitride-based light-emitting device |
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| CN102064254A (en) * | 2010-11-10 | 2011-05-18 | 中国科学院半导体研究所 | High-quality gallium nitride light-emitting diode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN106711295A (en) * | 2016-11-24 | 2017-05-24 | 华灿光电（浙江）有限公司 | Growing method of GaN-based light emitting diode epitaxial wafer |
| CN106711295B (en) * | 2016-11-24 | 2019-03-08 | 华灿光电（浙江）有限公司 | A kind of growing method of GaN base light emitting epitaxial wafer |
| CN113328016A (en) * | 2021-08-02 | 2021-08-31 | 至芯半导体(杭州)有限公司 | AlInGaN ultraviolet light-emitting device and preparation method thereof |
| CN113594314A (en) * | 2021-08-05 | 2021-11-02 | 江西新正耀光学研究院有限公司 | Structure of deep ultraviolet light emitting diode and preparation method thereof |
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