CN104617196A - Light emitting diode and production method thereof - Google Patents
Light emitting diode and production method thereof Download PDFInfo
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- CN104617196A CN104617196A CN201510047727.XA CN201510047727A CN104617196A CN 104617196 A CN104617196 A CN 104617196A CN 201510047727 A CN201510047727 A CN 201510047727A CN 104617196 A CN104617196 A CN 104617196A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 81
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000005291 magnetic effect Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 107
- 230000007423 decrease Effects 0.000 description 10
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
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- 238000002310 reflectometry Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
The invention discloses a light emitting diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light emitting diode includes a permanent substrate, and a bonding layer, a first insulating layer, a spiral coil, a second insulating layer, a metal reflecting layer, a P-type layer, a light emitting layer, an N-type layer and an N-type electrode sequentially formed on the permanent substrate, wherein the central line of the spiral coil is parallel to the formation direction of each layer of the light emitting diode, one end of the spiral coil is connected with the metal reflecting layer after passing through the second insulating layer while the other end of the spiral coil is connected with the bonding layer after passing through the first insulating layer, and the bonding layer and the permanent substrate are both made from non-insulated material. According to the light emitting diode, a magnetic field is formed by the spiral coil, electrons of the N-type layer are reflected towards one side of the periphery of the N-type layer, so that the electrons of the N-type layer are uniformly distributed on one side of the periphery of the N-type layer under the effect of Lorentz force, current in the N-type layer is dispersed, and the light emitting efficiency of the LED is improved in combination with the electrode design of the LED chip.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (Light Emitting Diode is called for short LED) is a kind of light emitting semiconductor device, is widely used in indicator light, display screen etc.White light LEDs is the third generation electric light source after incandescent lamp and fluorescent lamp, and the energy consumption of white light LEDs is only 1/8th of incandescent lamp, 1/2nd of fluorescent lamp, and the life-span is 100,000 hours, is " putting things right once and for all " for average family illumination.
Existing LED comprises substrate and is layered in the epitaxial loayer on substrate, epitaxial loayer comprises the N-type layer be sequentially laminated on substrate, luminescent layer, P-type layer, epitaxial loayer offers the groove extending to N-type layer from P-type layer, P-type layer is provided with P-type electrode, and N-type layer is provided with N-type electrode.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
Epitaxial loayer is semiconductor, P-type electrode and N-type electrode are generally conductor, charge carrier (comprising electronics and the hole) mobility of conductor is much larger than semiconductor, in order to disperse the electric current in epitaxial loayer, charge carrier in epitaxial loayer is uniformly distributed, usually be designed to P-type electrode and/or N-type electrode to comprise a contact near epitaxial loayer periphery and at least one bar shaped section be electrically connected with this contact, the bar shaped section of an electrode (P-type electrode or N-type electrode) to stretch out and towards the contact of another electrode from the contact of this electrode.Because electrode (P-type electrode and N-type electrode) have employed light absorbent, bar-shaped zone is when adding current expansion, and also the light that sends of simultaneously stability epitaxial loayer, reduces the luminous efficiency of LED.
Summary of the invention
To reduce the problem of LED luminous efficiency in order to solve prior art because bar-shaped zone absorbs the light that sends of epitaxial loayer, embodiments providing a kind of light-emitting diode and manufacture method thereof.Described technical scheme is as follows:
On the one hand, embodiments provide a kind of light-emitting diode, described light-emitting diode comprises permanent substrate, and the tack coat be formed in successively on described permanent substrate, first insulating barrier, spiral coil, second insulating barrier, metallic reflector, P-type layer, luminescent layer, N-type layer and N-type electrode, the center line of described spiral coil is parallel with the formation direction of each layer of described light-emitting diode, one end of described spiral coil is connected with described metallic reflector through described second insulating barrier, the other end of described spiral coil is connected with described tack coat through described first insulating barrier, described tack coat and described permanent substrate all adopt non-insulating material to make.
Alternatively, one or more in described spiral coil employing Au, Al, Cu, Ag, Fe, Ti are made.
Alternatively, the height of described spiral coil is 1-10 micron.
Alternatively, described first insulating barrier adopts SiO
2or SiN
xmake, described second insulating barrier adopts SiO
2or SiN
xmake.
Alternatively, the thickness of described first insulating barrier is 1-10 micron, and the thickness of described second insulating barrier is 1-10 micron.
On the other hand, embodiments provide a kind of manufacture method of light-emitting diode, described manufacture method comprises:
Temporary base grows N-type layer, luminescent layer, P-type layer successively, forms epitaxial loayer;
Described P-type layer forms metallic reflector;
Described metallic reflector is formed the second insulating barrier, in described second insulating barrier, is provided with a through hole along the formation direction of each layer of described light-emitting diode;
Described second insulating barrier forms spiral coil, and the center line of described spiral coil is parallel with the formation direction of each layer of described light-emitting diode, and one end of described spiral coil is connected with described metallic reflector through the through hole in described second insulating barrier;
Described spiral coil is formed the first insulating barrier, is provided with a through hole along the formation direction of each layer of described light-emitting diode in described first insulating barrier, the through hole in described first insulating barrier leads to the other end of described spiral coil;
Stick on described first insulating barrier by tack coat by permanent substrate, described tack coat is connected with the other end of described spiral coil through the through hole in described first insulating barrier, and described tack coat and described permanent substrate all adopt non-insulating material to make;
Described epitaxial loayer is inverted, removes described temporary base;
Described N-type layer arranges N-type electrode.
Alternatively, describedly on described second insulating barrier, form spiral coil, comprising:
Described second insulating barrier covers one deck photoresist;
When spiral photolithography plate blocks photoresist, photoresist is exposed;
Adopt the photoresist after developing solution corrosion exposure, remove spiral photoresist;
Adopt electron gun evaporation layer of metal film;
Peel off the metal film on remaining photoresist and photoresist, form spiral coil.
Alternatively, one or more in described spiral coil employing Au, Al, Cu, Ag, Fe, Ti are made.
Alternatively, the height of described spiral coil is 1-10 micron.
Alternatively, described first insulating barrier adopts SiO
2or SiN
xmake, described second insulating barrier adopts SiO
2or SiN
xmake.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By arranging spiral coil between permanent substrate and metallic reflector, the center line of spiral coil is parallel with the formation direction of each layer of light-emitting diode, when light-emitting diode is energized, a magnetic field is formed in spiral coil, according to Hall effect, the electronics of N-type layer is subject to Lorentz force and side towards N-type layer periphery deflects, make the electronics of N-type layer under the effect of Lorentz force, be evenly distributed on the side of N-type layer periphery, disperse the electric current in N-type layer, facilitate the expansion of electric current, LED chip is more easily luminous, and, N-type electrode can reduce the bar shaped section arranged in order to extend current, decrease the use of the light absorbent that electrode adopts, and then decrease the absorption of N-type electrode to the light that luminescent layer sends, in conjunction with LED chip electrode design, improve the luminous efficiency of LED.Meanwhile, P-type electrode contacts with metallic reflector, the hole current favorable expandability of P-type layer, and the light that luminescent layer sends by metallic reflector simultaneously reflects away, and further increases the luminous efficiency of LED.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of light-emitting diode that the embodiment of the present invention one provides;
Fig. 2 is the vertical view of the spiral coil that the embodiment of the present invention one provides;
Fig. 3 is the stressed schematic diagram of the electronics of the N-type layer that the embodiment of the present invention one provides;
Fig. 4 is the schematic diagram of the N-type electrode that the embodiment of the present invention one provides;
Fig. 5 is the flow chart of the manufacture method of a kind of light-emitting diode that the embodiment of the present invention two provides;
Fig. 6 a-Fig. 6 h is the structural representation of light-emitting diode in the process of the manufacture light-emitting diode that the embodiment of the present invention two provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Embodiments provide a kind of light-emitting diode, see Fig. 1, this light-emitting diode comprises permanent substrate 1 and is formed in tack coat 2, first insulating barrier 3, spiral coil 4, second insulating barrier 5, metallic reflector 6, P-type layer 7, luminescent layer 8, N-type layer 9 and the N-type electrode 10 on permanent substrate 1 successively.
Wherein, the center line of spiral coil 4 is parallel with the formation direction of each layer of light-emitting diode, and one end of spiral coil 4 is connected with metallic reflector 6 through the second insulating barrier 5, and the other end of spiral coil 4 is connected with tack coat 2 through the first insulating barrier 3.Tack coat 2 and permanent substrate 1 all adopt non-insulating material to make.
In specific implementation, in second insulating barrier 5, (as general centre position) is provided with a through hole along the formation direction of each layer of LED on the one hand, on the other hand, spiral coil 4 and metallic reflector 6 all adopt electron gun vapour deposition method to make, and are therefore easy to one end of spiral coil 4 to be connected with metallic reflector 6 through the through hole in the second insulating barrier 5.
Particularly, when forming spiral coil 4, first cover one deck photoresist at the second insulating barrier, recycling spirality photoetching board to explosure, then utilize developing solution to remove photoresist in spiral region, then carry out electron gun evaporation layer of metal film, finally peel off the metal film on remaining photoresist and photoresist, can form spiral coil, the thickness of metal film is the height of spiral coil.
Similarly, in first insulating barrier 3, (as near peripheral position) is also provided with a through hole along the formation direction of each layer of LED on the one hand, on the other hand, adhesive layer 2 is also adopt electron gun vapour deposition method to make, and is therefore easy to the other end of spiral coil 4 to be connected with tack coat 2 through the through hole in the first insulating barrier 3.
In a kind of implementation of the present embodiment, spiral coil 4 can adopt in Au, Al, Cu, Ag, Fe, Ti one or more make.
Alternatively, the height of spiral coil 4 can be 1-10 micron.
In the another kind of implementation of the present embodiment, the first insulating barrier 3 can adopt SiO
2or SiN
xmake, the second insulating barrier 5 can adopt SiO
2or SiN
xmake.
Alternatively, the thickness of the first insulating barrier 3 can be 1-10 micron, and the thickness of the second insulating barrier 5 can be 1-10 micron.
In another implementation of the present embodiment, metallic reflector 6 can adopt in ITO/Ag, Ag, Al, Au, Pt, Rh one or more make.Easily know, when metallic reflector 6 adopts previous materials to make, the ohmic contact formed between one side and P-type layer 7, metallic reflector 6 has high emissivity on the other hand, and reflectivity can more than 80%.
Alternatively, the thickness of metallic reflector 6 can be 1-5 micron.
In another implementation of the present embodiment, N-type electrode 10 can adopt in Au, Al, Cu, Ag, Fe, Ti, Cr, Pt one or more make.
In another implementation of the present embodiment, tack coat 2 can adopt in AuSn, Au, Ti, In, InAu one or more make.
In another implementation of the present embodiment, permanent substrate 1 can adopt in Si, SiC, Cu, Mo, CuW one or more make.
Below in conjunction with Fig. 2-Fig. 4, the expansion how embodiment of the present invention realizes electric current is briefly described:
Fig. 2 is the vertical view of spiral coil 4, and in Fig. 2, A represents electric field, and arrow represents direction of an electric field, and B represents magnetic field, and fork fork represents magnetic direction.As can be seen from Figure 2, when spiral coil is energized, based on the magnetic effect of electric current, in spiral coil, produce the magnetic field in the formation direction along each layer of LED.Particularly, permanent substrate is connect the positive pole of power supply as P-type electrode, N-type electrode connects the negative pole of power supply, because the permanent substrate, tack coat, spiral coil, metallic reflector, P-type layer, luminescent layer, N-type layer, the N-type electrode that are electrically connected successively all adopt non-insulating material to make, therefore under the effect of power supply, can be energized in spiral coil, produce magnetic field.
Fig. 3 is the stressed schematic diagram of the electronics of N-type layer, in Fig. 3, B represents magnetic field, v represents that the direction of motion of electronics is (relevant with the setting position of N-type electrode and P-type electrode, such as in FIG, N-type electrode is arranged on the right side of N-type layer periphery, then electronics the direction of motion for shown in Fig. 3 from the right side of N-type layer periphery to the left side of N-type layer periphery), F represents Lorentz force.As can be seen from Figure 3, after magnetic field produces, according to Hall effect, the electronics of N-type layer deflects to the front side of N-type layer periphery under the effect of Lorentz force, be evenly distributed on the front side of N-type layer periphery, extend the electric current of the front side of N-type layer periphery, therefore do not need on the front side of N-type layer periphery, arrange bar shaped section, decrease the setting of bar shaped section, as shown in Figure 4.In Fig. 4, solid line represents contact and bar shaped section (N-type electrode) that N-type layer is arranged, and dotted line represents the bar shaped section removed.As can be seen from Figure 4, the bar shaped section of the light-emitting diode that the embodiment of the present invention provides decreases, and the light absorbent that N-type electrode adopts decreases, and the absorption of N-type electrode to the light that luminescent layer sends decreases, and the luminous efficiency of LED improves.
The embodiment of the present invention by arranging spiral coil between permanent substrate and metallic reflector, the center line of spiral coil is parallel with the formation direction of each layer of light-emitting diode, when light-emitting diode is energized, a magnetic field is formed in spiral coil, according to Hall effect, the electronics of N-type layer is subject to Lorentz force and side towards N-type layer periphery deflects, make the electronics of N-type layer under the effect of Lorentz force, be evenly distributed on the side of N-type layer periphery, disperse the electric current in N-type layer, facilitate the expansion of electric current, LED chip is more easily luminous, and, N-type electrode can reduce the bar shaped section arranged in order to extend current, decrease the use of the light absorbent that electrode adopts, and then decrease the absorption of N-type electrode to the light that luminescent layer sends, in conjunction with LED chip electrode design, improve the luminous efficiency of LED.Meanwhile, P-type electrode contacts with metallic reflector, the hole current favorable expandability of P-type layer, and the light that luminescent layer sends by metallic reflector simultaneously reflects away, and further increases the luminous efficiency of LED.
Embodiment two
Embodiments provide a kind of manufacture method of light-emitting diode, see Fig. 5, this manufacture method comprises:
Step 201: grow N-type layer, luminescent layer, P-type layer successively on temporary base, forms epitaxial loayer.
Fig. 6 a is the structural representation of the LED after step 201 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer.
Alternatively, temporary base can adopt in sapphire, AlN, SiC, GaN one or more make.
Step 202: form metallic reflector in P-type layer.
Fig. 6 b is the structural representation of the LED after step 202 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector.
Alternatively, metallic reflector can adopt in ITO/Ag, Ag, Al, Au, Pt, Rh one or more make.
Understandably, metallic reflector adopts above-mentioned material to make, on the one hand can and P-type layer between the ohmic contact that formed, make metallic reflector have high emissivity on the other hand, reflectivity can more than 80%.
Alternatively, the thickness of metallic reflector can be 1-5 micron.
Step 203: form the second insulating barrier on metallic reflector.
Wherein, a through hole along the formation direction of each layer of LED is provided with in the second insulating barrier.
Fig. 6 c is the structural representation of the LED after step 203 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier.
Step 204: form spiral coil over the second dielectric.
Wherein, the center line of spiral coil is parallel with the formation direction of each layer of LED, and one end of spiral coil is connected with metallic reflector through the through hole in the second insulating barrier.
In specific implementation, a through hole along the formation direction of each layer of LED is provided with on the one hand in second insulating barrier, on the other hand, spiral coil and metallic reflector all adopt electron gun vapour deposition method to make, and are therefore easy to one end of spiral coil to be connected with metallic reflector through the through hole in the second insulating barrier.
Fig. 6 d is the structural representation of the LED after step 204 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil.
Particularly, this step 204 can comprise:
Cover one deck photoresist over the second dielectric;
When spiral photolithography plate blocks photoresist, photoresist is exposed;
Adopt the photoresist after developing solution corrosion exposure, remove spiral photoresist;
Adopt electron gun evaporation layer of metal film;
Peel off the metal film on remaining photoresist and photoresist, form spiral coil.
Alternatively, spiral coil can adopt in Au, Al, Cu, Ag, Fe, Ti one or more make.
Alternatively, the height of spiral coil can be 1-10 micron.
Step 205: form the first insulating barrier on spiral coil.
Wherein, be provided with a through hole along the formation direction of each layer of LED in the first insulating barrier, the through hole in the first insulating barrier leads to the other end of spiral coil.
Fig. 6 e is the structural representation of the LED after step 205 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier.
Alternatively, the first insulating barrier can adopt SiO
2or SiN
xmake, the second insulating barrier can adopt SiO
2or SiN
xmake.
Alternatively, the thickness of the first insulating barrier can be 1-10 micron, and the thickness of the second insulating barrier can be 1-10 micron.
Step 206: permanent substrate is sticked on the first insulating barrier by tack coat.
Wherein, tack coat is connected with the other end of the spiral coil through the first insulating barrier, and tack coat and permanent substrate all adopt non-insulating material to make.
Fig. 6 f is the structural representation of the LED after step 206 performs.Wherein, 11 represent temporary base, and 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier, and 2 represent tack coat, and 1 represents permanent substrate.
In specific implementation, a through hole along the formation direction of each layer of LED is provided with on the one hand in first insulating barrier, on the other hand, coil and adhesive layer and spiral coil all adopt electron gun vapour deposition method to make, and are therefore easy to tack coat to be connected with the other end of spiral coil through the through hole in the first insulating barrier.
In a kind of implementation of the present embodiment, permanent substrate can adopt in Si, SiC, Cu, Mo, CuW one or more make.
In the another kind of implementation of the present embodiment, tack coat can adopt in AuSn, Au, Ti, In, InAu one or more make.
Step 207: be inverted by institute's epitaxial loayer, removes temporary base.
Fig. 6 g is the structural representation of the LED after step 207 performs.Wherein, 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier, and 2 represent tack coat, and 1 represents permanent substrate.
Step 208: N-type electrode is set in N-type layer.
Fig. 6 h is the structural representation of the LED after step 208 performs.Wherein, 9 represent N-type layer, and 8 represent luminescent layer, and 7 represent P-type layer, and 6 represent metallic reflector, and 5 represent the second insulating barrier, and 4 represent spiral coil, and 3 represent the first insulating barrier, and 2 represent tack coat, and 1 represents permanent substrate, and 10 represent N-type electrode.
Alternatively, N-type electrode can adopt in Au, Al, Cu, Ag, Fe, Ti, Cr, Pt one or more make.
The embodiment of the present invention by arranging spiral coil between permanent substrate and metallic reflector, the center line of spiral coil is parallel with the formation direction of each layer of light-emitting diode, when light-emitting diode is energized, a magnetic field is formed in spiral coil, according to Hall effect, the electronics of N-type layer is subject to Lorentz force and side towards N-type layer periphery deflects, make the electronics of N-type layer under the effect of Lorentz force, be evenly distributed on the side of N-type layer periphery, disperse the electric current in N-type layer, facilitate the expansion of electric current, LED chip is more easily luminous, and, N-type electrode can reduce the bar shaped section arranged in order to extend current, decrease the use of the light absorbent that electrode adopts, and then decrease the absorption of N-type electrode to the light that luminescent layer sends, in conjunction with LED chip electrode design, improve the luminous efficiency of LED.Meanwhile, P-type electrode contacts with metallic reflector, the hole current favorable expandability of P-type layer, and the light that luminescent layer sends by metallic reflector simultaneously reflects away, and further increases the luminous efficiency of LED.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a light-emitting diode, it is characterized in that, described light-emitting diode comprises permanent substrate, and the tack coat be formed in successively on described permanent substrate, first insulating barrier, spiral coil, second insulating barrier, metallic reflector, P-type layer, luminescent layer, N-type layer and N-type electrode, the center line of described spiral coil is parallel with the formation direction of each layer of described light-emitting diode, one end of described spiral coil is connected with described metallic reflector through described second insulating barrier, the other end of described spiral coil is connected with described tack coat through described first insulating barrier, described tack coat and described permanent substrate all adopt non-insulating material to make.
2. light-emitting diode according to claim 1, is characterized in that, one or more in described spiral coil employing Au, Al, Cu, Ag, Fe, Ti are made.
3. light-emitting diode according to claim 1, is characterized in that, the height of described spiral coil is 1-10 micron.
4. light-emitting diode according to claim 1, is characterized in that, described first insulating barrier adopts SiO
2or SiN
xmake, described second insulating barrier adopts SiO
2or SiN
xmake.
5. light-emitting diode according to claim 1, is characterized in that, the thickness of described first insulating barrier is 1-10 micron, and the thickness of described second insulating barrier is 1-10 micron.
6. a manufacture method for light-emitting diode, is characterized in that, described manufacture method comprises:
Temporary base grows N-type layer, luminescent layer, P-type layer successively, forms epitaxial loayer;
Described P-type layer forms metallic reflector;
Described metallic reflector is formed the second insulating barrier, in described second insulating barrier, is provided with a through hole along the formation direction of each layer of described light-emitting diode;
Described second insulating barrier forms spiral coil, and the center line of described spiral coil is parallel with the formation direction of each layer of described light-emitting diode, and one end of described spiral coil is connected with described metallic reflector through the through hole in described second insulating barrier;
Described spiral coil is formed the first insulating barrier, is provided with a through hole along the formation direction of each layer of described light-emitting diode in described first insulating barrier, the through hole in described first insulating barrier leads to the other end of described spiral coil;
Stick on described first insulating barrier by tack coat by permanent substrate, described tack coat is connected with the other end of described spiral coil through the through hole in described first insulating barrier, and described tack coat and described permanent substrate all adopt non-insulating material to make;
Described epitaxial loayer is inverted, removes described temporary base;
Described N-type layer arranges N-type electrode.
7. manufacture method according to claim 6, is characterized in that, describedly on described second insulating barrier, forms spiral coil, comprising:
Described second insulating barrier covers one deck photoresist;
When spiral photolithography plate blocks photoresist, photoresist is exposed;
Adopt the photoresist after developing solution corrosion exposure, remove spiral photoresist;
Adopt electron gun evaporation layer of metal film;
Peel off the metal film on remaining photoresist and photoresist, form spiral coil.
8. manufacture method according to claim 6, is characterized in that, one or more in described spiral coil employing Au, Al, Cu, Ag, Fe, Ti are made.
9. manufacture method according to claim 6, is characterized in that, the height of described spiral coil is 1-10 micron.
10. manufacture method according to claim 6, is characterized in that, described first insulating barrier adopts SiO
2or SiN
xmake, described second insulating barrier adopts SiO
2or SiN
xmake.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510047727.XA CN104617196B (en) | 2015-01-30 | 2015-01-30 | A kind of light emitting diode and its manufacture method |
| PCT/CN2016/072684 WO2016119732A1 (en) | 2015-01-30 | 2016-01-29 | Light-emitting diode and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510047727.XA CN104617196B (en) | 2015-01-30 | 2015-01-30 | A kind of light emitting diode and its manufacture method |
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|---|---|---|---|---|
| CN105226153A (en) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode with high expansion effect |
| WO2016119732A1 (en) * | 2015-01-30 | 2016-08-04 | 华灿光电股份有限公司 | Light-emitting diode and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007169132A (en) * | 2005-12-26 | 2007-07-05 | Sumitomo Electric Ind Ltd | Gallium nitride crystal substrate, semiconductor device, method for manufacturing semiconductor device, and method for discriminating gallium nitride crystal substrate |
| CN101271917A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Antistatic structure of semiconductor lighting device and manufacturing method thereof |
| CN101271916A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
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| US6958498B2 (en) * | 2002-09-27 | 2005-10-25 | Emcore Corporation | Optimized contact design for flip-chip LED |
| TWI458130B (en) * | 2012-02-06 | 2014-10-21 | Lextar Electronics Corp | Wireless solid state light emitting apparatus |
| CN102723259B (en) * | 2012-06-12 | 2015-03-11 | 大连理工大学 | UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate |
| CN104617196B (en) * | 2015-01-30 | 2017-10-03 | 华灿光电股份有限公司 | A kind of light emitting diode and its manufacture method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007169132A (en) * | 2005-12-26 | 2007-07-05 | Sumitomo Electric Ind Ltd | Gallium nitride crystal substrate, semiconductor device, method for manufacturing semiconductor device, and method for discriminating gallium nitride crystal substrate |
| CN101271917A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Antistatic structure of semiconductor lighting device and manufacturing method thereof |
| CN101271916A (en) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016119732A1 (en) * | 2015-01-30 | 2016-08-04 | 华灿光电股份有限公司 | Light-emitting diode and manufacturing method therefor |
| CN105226153A (en) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode with high expansion effect |
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| WO2016119732A1 (en) | 2016-08-04 |
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