WO2019179226A1 - Chip for led light source, and led light source prepared using same - Google Patents

Chip for led light source, and led light source prepared using same Download PDF

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Publication number
WO2019179226A1
WO2019179226A1 PCT/CN2019/072022 CN2019072022W WO2019179226A1 WO 2019179226 A1 WO2019179226 A1 WO 2019179226A1 CN 2019072022 W CN2019072022 W CN 2019072022W WO 2019179226 A1 WO2019179226 A1 WO 2019179226A1
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WO
WIPO (PCT)
Prior art keywords
light source
chip
substrate
led light
led
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Application number
PCT/CN2019/072022
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French (fr)
Chinese (zh)
Inventor
陈亭玉
陈大钟
刘传桂
王�锋
洪灵愿
曾合加
林素慧
林科闯
彭康伟
张家宏
Original Assignee
厦门市三安光电科技有限公司
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Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Publication of WO2019179226A1 publication Critical patent/WO2019179226A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular, to a chip for an LED light source and an LED light source prepared therewith.
  • the light source is more and more favored by consumers because of its high luminous efficiency, low power consumption of the light source, long service life, strong safety and reliability, environmental protection and energy saving.
  • the energy conservation is an important issue for us in the future.
  • LED lighting products gradually replace traditional lighting fixtures and enter various application fields.
  • LED can be widely used in various fields such as indication, display, decoration, backlight, general lighting and urban night scene.
  • a lamp that is, a semiconductor light emitting diode lamp, is a semiconductor solid state light emitting device. It uses a solid-state semiconductor LED chip as a luminescent material, and in the semiconductor, composites emit excess energy to cause photon emission, defects are inevitable due to epitaxial crystallization, and the LED illuminates electric energy into light energy. The existence of thermal energy as a by-product in the process, the heat dissipation of LED lamps is a hot spot of current research.
  • the filament of the technical Lm) filament lamp is to fix at least one string of LED chips on a substrate with a solid glue, there is an electrical connection between the chips, and at least one layer of fluorescence around the chip and the substrate
  • the powder layer has an electrical lead wire electrically connected to the chip at the two ends of the substrate.
  • the purpose of the present invention is to overcome the above deficiencies and provide a simple manufacturing process, low cost, and high A chip for outputting luminous flux, high efficiency, and an LED light source prepared therewith.
  • the technical solution provided by the present invention includes: a chip for an LED light source, comprising: at least one string of LED chip units, the LED chip unit comprising: a substrate and a light emitting epitaxial layer, The LED chip unit is divided into a plurality of LED chip unit, characterized in that: the substrate thickness is >20 (Vm
  • the substrate has a thickness of 200 to 60 (Vm).
  • the substrate serves as a carrier substrate of the LED chip and a package substrate of the LED light source.
  • the substrate comprises: a transparent substrate or an opaque substrate such as glass, sapphire, transparent ceramic, plastic, metal or phosphor-containing glass, plastic, ceramic, or the like.
  • the number of strings of the LED chip unit is 2-6 strings.
  • the adjacent LED chip unit is electrically connected by a conductive layer.
  • the electrical connection form of the LED chip unit comprises: series or parallel or series and parallel.
  • the electrodes of the head and tail LED chip units of the LED chip unit serve as pin electrodes.
  • the lead electrode is located above the light emitting epitaxial layer.
  • the electrode area of the head and tail LED chip unit of the LED chip unit accounts for more than 80% of the area of the head and tail LED chip units, respectively.
  • the LED chip unit has a length of 20 to 60 mm and a width of 0.5 to 3 mm.
  • the length of the LED chip unit is in a positive correlation relationship with the thickness of the substrate.
  • the technical solution provided by the present invention includes: an LED light source, comprising one or more LED chips, the substrate of the LED chip unit directly serving as a package substrate, without being packaged on an additional substrate .
  • the light source further includes a wavelength conversion layer, and the wavelength conversion layer is mixed by a phosphor and a transparent medium.
  • the wavelength conversion layer is matched with the light emitted by the LED chip to obtain white light or other light of a desired color.
  • the light source is a strip-shaped integrated light source.
  • the strip-shaped integrated light source is a filament light source.
  • the utility model adopts at least one string of LED high voltage chip unit design, so that the length of the LED chip unit is consistent with the length of the light source (such as the filament), thereby replacing the conventional filament light source design, and the head and tail chip subunits
  • the pin electrode structure is added, and the lead electrode is in contact with the external bracket or the lead wire, and no process such as wire bonding or solid crystal is required, thereby reducing the packaging cost and improving the output luminous flux and efficiency.
  • multiple strings of LED high-voltage chips can achieve 360° full-circumference light output through bonding and other technologies.
  • the luminescent epitaxial layer is located on the substrate 100.
  • sapphire is preferably used as the growth substrate, and the luminescent epitaxial layer may be transferred onto the opaque substrate by a process such as removing the growth substrate by laser lift-off.
  • the luminescent epitaxial layer may be red, yellow or blue, green or ultraviolet or other light. In this embodiment, it is preferred that the luminescent epitaxial layer emits blue and green light.
  • the LED chip unit is formed into an isolation walkway by an etching process, and is divided into four LED chip unit units, wherein the LED chip unit at both ends of the head and the tail does not participate in light emission, and the etching is retained to the N-GaN layer platform.
  • a current blocking layer (CB layer) 300, a current spreading layer (ITO layer) 400 are formed on the light emitting epitaxial layer, and finally PAD electrodes 500, 501, and 502 are fabricated by a process such as evaporation or sputtering, wherein the electrode 501
  • the P electrode is located on the epitaxial layer of the first LED chip unit, and the P electrode occupies more than 80%, preferably 90%, of the area of the LED chip unit where it is located, and can directly serve as a lead electrode;
  • the N electrode is located on the epitaxial layer of the last LED chip unit, and the N electrode accounts for more than 80%, preferably 90%, of the area of the LED chip unit where it is located, and can be directly used as a lead electrode
  • the length of the LED chip unit is 20 ⁇ 60mm, preferably 30 ⁇ 40mm, and the width is 0.5 ⁇ 3mm, preferably 0.8 ⁇ 1.8mm.
  • the length of the LED chip unit is positive with the thickness of the substrate.
  • the proportional relationship that is, the longer the length of the general LED chip unit, the thicker the corresponding substrate thickness, preferably the ratio of the length of the LED chip unit to the thickness of the substrate is >50:1, more preferably 75:1 or 100. : 1.
  • the LED chip unit has a length of 30 mm, a width of 0.8 mm, and a thickness of 400 ⁇ .
  • the ratio of the length of the shell IjL ED chip unit to the thickness of the substrate is 75:1.
  • the chip for an LED light source provided by the embodiment adopts at least one string of LED high voltage chip unit design, so that the length of the LED chip unit is consistent with the length of the light source (such as a filament), thereby replacing the conventional filament light source.
  • the lead electrode structure is added to the head and tail chip sub-units, and the lead electrode is in contact with the external bracket or the lead wire (not shown), and no process such as wire bonding or solid crystal is required, thereby reducing the packaging cost. Improve the output luminous flux and efficiency.
  • the embodiment provides an LED light source, wherein the light source is a strip-shaped integrated light source, and the strip-shaped integrated light source is preferably a filament light source.
  • the chip for the LED light source of the present embodiment includes two strings of LED chip units, and the substrate 100 of the first serial chip and the substrate 101 of the second serial chip can The bonding layer 102 is back-to-back bonded so that the filament light source can achieve 360° full-circumferential light output.
  • the total thickness of the substrates 100 and 101 may be equivalent to the substrate thickness of the single string LED chip unit. That is, the total thickness is greater than or equal to 20 (Vm. In this embodiment, the total thickness of the substrate is preferably equal to about 40 (Vm), and the thicknesses of the substrates 100 and 101 are respectively equal to about 20 (Vm).
  • the light source further includes a wavelength conversion layer (not shown), wherein the wavelength conversion layer is formed by mixing a phosphor and a transparent medium; and the wavelength conversion layer is matched with light emitted by the LED chip to obtain White light or other light of the desired color.
  • the present embodiment is preferably two-series high-voltage LED chip bonding
  • the number of strings is not limited thereto, and may be three strings, four strings, five strings or more, so that the substrate can be flexible.
  • the substrate is formed into a cylindrical or columnar structure, preferably having a thickness of 260 (Vm)
  • the cylindrical or columnar structure substrate has a triangular or quadrangular shape or a pentagon in cross section, and the high voltage LED chip strings are respectively located in the above cylindrical shape or On the surface of the columnar structure substrate.
  • the LED light source provided by the embodiment adopts a plurality of high-voltage chips as the filament lamp, and the 360° full-circumference effect can be realized without multiple series connection; in addition, the growth of the high-voltage chip is controlled by controlling the thickness of the substrate. Or the carrier substrate can be directly used as a package substrate without the need for die bonding on other additional substrates.
  • the single string LED chip itself can be used as a filament to replace the conventional filament source. Therefore, the utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Disclosed are a chip for an LED light source, and an LED light source prepared using same. The chip comprises: at least one string of LED chip units, wherein each LED chip unit comprises: a substrate and a light-emitting epitaxial layer, and the LED chip unit is divided into several LED sub-chip units, characterized in that the substrate has a thickness of ≥200 μm.

Description

一种用于 LED光源的芯片及用其制备的 LED光源 技术领域  Chip for LED light source and LED light source prepared thereby
[0001] 本实用新型涉及半导体技术领域， 特别涉及一种用于LED光源的芯片及用其制 备的LED光源。  [0001] The present invention relates to the field of semiconductor technology, and in particular, to a chip for an LED light source and an LED light source prepared therewith.
背景技术  Background technique
[0002] 光源以其发光效率高、 光源耗电量少、 使用寿命长、 安全可靠性强、 有利环保 、 节能等优点， 使其越来越受广大消费者青睐。 另一方面， 当前全球能源短缺 的忧虑再度升高的背景下， 节约能源是我们未来面临的重要的问题， 在照明领 ±或， LED发光产品逐渐取代传统的照明灯具而进入各种应用领域。 LED作为一种 新型的绿色光源产品， 可以广泛应用于各种指示、 显示、 装饰、 背光源、 普通 照明和城市夜景等领域。  [0002] The light source is more and more favored by consumers because of its high luminous efficiency, low power consumption of the light source, long service life, strong safety and reliability, environmental protection and energy saving. On the other hand, in the context of the current global energy shortages, the energy conservation is an important issue for us in the future. In the lighting industry, LED lighting products gradually replace traditional lighting fixtures and enter various application fields. As a new type of green light source, LED can be widely used in various fields such as indication, display, decoration, backlight, general lighting and urban night scene.
[0003] 灯即半导体发光二极管灯， 是一种半导体固体发光器件。 它是利用固体半导体 LED芯片作为发光材料， 在半导体中通过载流子发生复合放出过剩的能量而引起 光子发射， 由于外延垒晶过程中缺陷不可避免存在， 并且在LED点亮电能转化为 光能过程中作为副产物的热能存在， 使LED灯热散是目前研究的热点。  [0003] A lamp, that is, a semiconductor light emitting diode lamp, is a semiconductor solid state light emitting device. It uses a solid-state semiconductor LED chip as a luminescent material, and in the semiconductor, composites emit excess energy to cause photon emission, defects are inevitable due to epitaxial crystallization, and the LED illuminates electric energy into light energy. The existence of thermal energy as a by-product in the process, the heat dissipation of LED lamps is a hot spot of current research.
[0004] 5见有技术的Lm）灯丝灯的灯丝都是把至少一串LED芯片、 用固晶胶固定在一个 基板上， 芯片之间有电连接线， 芯片和基板周围有至少一层荧光粉层， 基板二 端有和芯片电连接的电引出线。 5见有技术的LED灯丝的制造工艺还比较复杂、 成 本较高， 是目前LED灯丝灯的成本的主要构成之一。 如何简化LED灯丝的工艺、 降低其成本和制造更高输出光通量的灯丝是目前LED灯丝灯发展的重要课题之一 发明概述  [0004] 5 see the filament of the technical Lm) filament lamp is to fix at least one string of LED chips on a substrate with a solid glue, there is an electrical connection between the chips, and at least one layer of fluorescence around the chip and the substrate The powder layer has an electrical lead wire electrically connected to the chip at the two ends of the substrate. 5 Seeing the manufacturing process of the technical LED filament is still relatively complicated and costly, and it is one of the main components of the current cost of the LED filament lamp. How to simplify the process of LED filament, reduce its cost and manufacture filament with higher output luminous flux is one of the important topics in the development of LED filament lamp.
技术问题  technical problem
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0005] 本实用新型的目的在于克服上述之不足， 提供一种制造工艺简单、 成本低、 高 输出光通量、 高效率的一种用于 LED光源的芯片及用其制备的 LED光源。 [0005] The purpose of the present invention is to overcome the above deficiencies and provide a simple manufacturing process, low cost, and high A chip for outputting luminous flux, high efficiency, and an LED light source prepared therewith.
[0006] 本实用新型提供的技术方案， 一方面， 包括： 一种用于 LED光源的芯片， 包括 : 至少一串的 LED芯片单元， 所述 LED芯片单元包括： 基板和发光外延层， 所述 LED芯片单元分为若干个 LED子芯片单元， 其特征在于： 所述基板厚度＞20(Vm  [0006] The technical solution provided by the present invention, in one aspect, includes: a chip for an LED light source, comprising: at least one string of LED chip units, the LED chip unit comprising: a substrate and a light emitting epitaxial layer, The LED chip unit is divided into a plurality of LED chip unit, characterized in that: the substrate thickness is >20 (Vm
[0007] 优选地， 所述 LED芯片单元为发红、 黄光或蓝、 绿光或紫外光或其他光的芯片 单元。 [0007] Preferably, the LED chip unit is a chip unit that emits red, yellow or blue, green or ultraviolet light or other light.
[0008] 优选地， 所述基板厚度介于 200~60(Vm。  [0008] Preferably, the substrate has a thickness of 200 to 60 (Vm).
[0009] 优选地， 所述基板作为 LED芯片的承载基板以及 LED光源的封装基板。  [0009] Preferably, the substrate serves as a carrier substrate of the LED chip and a package substrate of the LED light source.
[0010] 优选地， 所述基板包括： 透明基板或者不透明基板， 例如玻璃、 蓝宝石、 透明 陶瓷、 塑料、 金属或含有荧光粉的玻璃、 塑料、 陶瓷等。  [0010] Preferably, the substrate comprises: a transparent substrate or an opaque substrate such as glass, sapphire, transparent ceramic, plastic, metal or phosphor-containing glass, plastic, ceramic, or the like.
[0011] 优选地， 所述 LED芯片单元的串数为 2~6串。  [0011] Preferably, the number of strings of the LED chip unit is 2-6 strings.
[0012] 优选地， 所述 LED子芯片单元的个数为 10~50个。  [0012] Preferably, the number of the LED chip unit is 10 to 50.
[0013] 优选地， 所述相邻的 LED子芯片单元通过导电层实现电连接。  [0013] Preferably, the adjacent LED chip unit is electrically connected by a conductive layer.
[0014] 优选地， 所述 LED子芯片单元的电连接形式包括： 串联或者并联或者串并联。  [0014] Preferably, the electrical connection form of the LED chip unit comprises: series or parallel or series and parallel.
[0015] 优选地， 所述 LED芯片单元的头、 尾 LED子芯片单元的电极作为引脚电极。 [0015] Preferably, the electrodes of the head and tail LED chip units of the LED chip unit serve as pin electrodes.
[0016] 优选地， 所述引脚电极位于所述发光外延层之上。 [0016] Preferably, the lead electrode is located above the light emitting epitaxial layer.
[0017] 优选地， 所述 LED芯片单元的头、 尾 LED子芯片单元的电极面积分别占其头、 尾 LED子芯片单元面积的 80%以上。  [0017] Preferably, the electrode area of the head and tail LED chip unit of the LED chip unit accounts for more than 80% of the area of the head and tail LED chip units, respectively.
[0018] 优选地， 所述 LED芯片单元的长度介于 20~60mm， 宽度介于 0.5~3mm。  [0018] Preferably, the LED chip unit has a length of 20 to 60 mm and a width of 0.5 to 3 mm.
[0019] 优选地， 所述 LED芯片单元的长度与基板的厚度呈正相关比例关系。  [0019] Preferably, the length of the LED chip unit is in a positive correlation relationship with the thickness of the substrate.
[0020] 优选地， 所述 LED芯片单元的长度与基板的厚度之比＞50: 1。  [0020] Preferably, the ratio of the length of the LED chip unit to the thickness of the substrate is >50:1.
[0021] 本实用新型提供的技术方案， 另一方面， 包括： 一种 LED光源， 包含一个或一 个以上的 LED芯片， 所述的 LED芯片单元的基板直接作为封装基板， 无需封装于 额外基板上。  [0021] The technical solution provided by the present invention, on the other hand, includes: an LED light source, comprising one or more LED chips, the substrate of the LED chip unit directly serving as a package substrate, without being packaged on an additional substrate .
[0022] 优选地， 所述基板为透明或不透明基板， 例如玻璃、 蓝宝石、 透明陶瓷、 塑料 、 金属或含有荧光粉的玻璃、 塑料、 陶瓷等。  [0022] Preferably, the substrate is a transparent or opaque substrate such as glass, sapphire, transparent ceramic, plastic, metal or phosphor-containing glass, plastic, ceramic, or the like.
[0023] 优选地， 所述光源还包括波长转换层， 所述波长转换层由荧光粉和透明介质混 合而成； 所述波长转换层与 LED芯片所发的光匹配， 以得到白光或其它所需要色 的光。 [0023] Preferably, the light source further includes a wavelength conversion layer, and the wavelength conversion layer is mixed by a phosphor and a transparent medium. The wavelength conversion layer is matched with the light emitted by the LED chip to obtain white light or other light of a desired color.
[0024] 优选地， 所述光源为条状集成光源。  [0024] Preferably, the light source is a strip-shaped integrated light source.
[0025] 优选地， 所述条状集成光源为灯丝灯光源。  [0025] Preferably, the strip-shaped integrated light source is a filament light source.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0026] 与现有技术相比， 本实用新型提供的一种用于 LED光源的芯片及用其制备的 LE D光源， 至少包括以下技术效果：  Compared with the prior art, the chip for LED light source and the LE D light source prepared by the same according to the present invention include at least the following technical effects:
[0027] 本实用新型藉由采用至少一串 LED高压芯片单元设计， 使得 LED芯片单元的长 度与光源 （如灯丝） 的长度一致， 从而取代常规的灯丝光源设计， 且在头、 尾 芯片子单元增设引脚电极结构， 通过引脚电极与外部支架或引线接触， 不需要 打线、 固晶等工艺， 进而起到了降低封装成本、 提高输出光通量和效率的效果 。 此外， 多串 LED高压芯片可以通过键合等技术， 实现 360°全周光出光效果。  [0027] The utility model adopts at least one string of LED high voltage chip unit design, so that the length of the LED chip unit is consistent with the length of the light source (such as the filament), thereby replacing the conventional filament light source design, and the head and tail chip subunits The pin electrode structure is added, and the lead electrode is in contact with the external bracket or the lead wire, and no process such as wire bonding or solid crystal is required, thereby reducing the packaging cost and improving the output luminous flux and efficiency. In addition, multiple strings of LED high-voltage chips can achieve 360° full-circumference light output through bonding and other technologies.
[0028] 本实用新型的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明 书中变得显而易见， 或者通过实施本实用新型而了解。 本实用新型的目的和其 他优点可通过在说明书、 权利要求书以及附图中所特别指出的结构来实现和获 得。 [0028] Other features and advantages of the invention will be set forth in the description which follows, The objectives and other advantages of the invention may be realized and obtained by the structure particularly pointed in the appended claims.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0029] 附图用来提供对本实用新型的进一步理解， 并且构成说明书的一部分， 与本实 用新型的实施例一起用于解释本实用新型， 并不构成对本实用新型的限制。 此 夕卜， 附图数据是描述概要， 不是按比例绘制。  The accompanying drawings are intended to provide a further understanding of the embodiments of the invention In addition, the drawing figures are a summary of the description and are not drawn to scale.
[0030] 图 1和 2是实施例 1的用于 LED光源的芯片的结构示意图， 其中图 1为剖视图， 图 2为俯视图。  1 and 2 are structural views of a chip for an LED light source of Embodiment 1, wherein FIG. 1 is a cross-sectional view, and FIG. 2 is a plan view.
[0031] 图 3是实施例 2的采用多串 LED芯片制作的灯丝光源示意图。  3 is a schematic view of a filament light source fabricated by using a plurality of strings of LED chips of Embodiment 2.
[0032] 图中各标号表示如下： 100、 101 : 基板； 102: 键合层； 201 : U-GaN层； 202 : N-GaN层； 203： MQW层； 204： P-GaN层； 300： CB层； 400： ITO层； 500、 [0032] The reference numerals in the drawings are as follows: 100, 101: substrate; 102: bonding layer; 201: U-GaN layer; 202: N-GaN layer; 203: MQW layer; 204: P-GaN layer; CB layer; 400: ITO layer; 500,
501、 502： PAD。 发明实施例 501, 502: PAD. Invention embodiment
本发明的实施方式  Embodiments of the invention
[0033] 下面结合示意图对本实用新型的用于 LED光源的芯片及用其制备的 LED光源进 行详细的描述， 在进一步介绍本实用新型之前， 应当理解， 由于可以对特定的 实施例进行改造， 因此， 本实用新型并不限于下述的特定实施例。 还应当理解 ， 由于本实用新型的范围只由所附权利要求限定， 因此所采用的实施例只是介 绍性的， 而不是限制性的。 除非另有说明， 否则这里所用的所有技术和科学用 语与本领域的普通技术人员所普遍理解的意义相同。  [0033] The chip for LED light source of the present invention and the LED light source prepared thereby are described in detail below with reference to the schematic diagram. Before further introducing the present invention, it should be understood that since a specific embodiment can be modified, The invention is not limited to the specific embodiments described below. It is also to be understood that the scope of the invention is intended to be Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
[0034] 实施例 1  Embodiment 1
[0035] 如图 1和 2所示， 本实施例提供一种用于 LED光源的芯片， 其包括： 至少一串的 LED芯片单元， 本实施例示优选一串， 所述 LED芯片单元包括： 基板 100和位于 基板之上的发光外延层， 所述 LED芯片单元分为若干个 LED子芯片单元， 示意图 中仅示出 4个 LED子芯片单元， 但不以此为限， 优选所述 LED子芯片单元的个数 为 10~50个， 更优选为 25~32个。  [0035] As shown in FIGS. 1 and 2, the present embodiment provides a chip for an LED light source, comprising: at least one string of LED chip units, which is preferably a string, the LED chip unit comprising: a substrate 100 and a light-emitting epitaxial layer on the substrate, the LED chip unit is divided into a plurality of LED chip unit units, and only four LED chip unit units are shown in the schematic diagram, but not limited thereto, preferably the LED chip chip The number of units is 10 to 50, and more preferably 25 to 32.
[0036] 所述基板 100, 可以包括： 透明基板或者不透明基板， 例如玻璃、 蓝宝石、 透 明陶瓷、 塑料、 金属或含有荧光粉的玻璃、 塑料、 陶瓷等。 本实施例优选蓝宝 石作为基板材料， 其作为 LED芯片的承载基板以及 LED光源的封装基板， 无需封 装于额外基板上。 基板的厚度 ^200[xm， 优选介于 200~600[xm， 更优选 400~500[x m。  [0036] The substrate 100 may include: a transparent substrate or an opaque substrate such as glass, sapphire, transparent ceramic, plastic, metal or phosphor-containing glass, plastic, ceramic, or the like. In this embodiment, sapphire is preferred as the substrate material, and as a carrier substrate of the LED chip and a package substrate of the LED light source, it is not required to be mounted on the additional substrate. The thickness of the substrate is ^200 [xm, preferably between 200 and 600 [xm, more preferably between 400 and 500 [x m.
[0037] 所述发光外延层位于基板 100之上， 本实施例优选蓝宝石作为生长基板， 也可 以通过激光剥离去除生长基板等工艺， 将发光外延层转移至不透明基板上。 发 光外延层， 可以是发红、 黄光或蓝、 绿光或紫外光或其他光， 本实施例优选发 光外延层发出蓝、 绿光。 本实施例的发光外延层从下至上依次包括， U-GaNg （ 不掺杂的 GaN层） 201， N-GaN层 （N导电型 GaN层） 202， MQW层 （多量子阱 ） 203 , P-GaN层 （P导电型 GaN层） 204。 当然， 也可以依据实际需求选择其它 种类的外延结构， 并不限于此处所列举的示例。  [0037] The luminescent epitaxial layer is located on the substrate 100. In this embodiment, sapphire is preferably used as the growth substrate, and the luminescent epitaxial layer may be transferred onto the opaque substrate by a process such as removing the growth substrate by laser lift-off. The luminescent epitaxial layer may be red, yellow or blue, green or ultraviolet or other light. In this embodiment, it is preferred that the luminescent epitaxial layer emits blue and green light. The light-emitting epitaxial layer of the present embodiment includes, in order from bottom to top, a U-GaNg (undoped GaN layer) 201, an N-GaN layer (N conductive type GaN layer) 202, an MQW layer (multiple quantum well) 203, P- A GaN layer (P conductive type GaN layer) 204. Of course, other types of epitaxial structures can also be selected according to actual needs, and are not limited to the examples listed herein.
[0038] 所述 LED芯片单元， 通过蚀刻工艺， 形成隔离走道， 分隔成 4个 LED子芯片单 元， 其中头、 尾两端的 LED子芯片单元， 不参与发光， 蚀刻保留至 N-GaN层平台 ， 用于后续形成大面积电极， 作为引脚电极； 其他 LED子芯片单元参与发光， 仅 蚀刻露出局部的 N-GaN层区域， 用于制作导电层， 以电连接相邻的 LED子芯片单 元； 可选地， 在发光外延层上制作电流阻挡层 （CB层） 300, 电流扩展层 （ITO 层） 400， 最后通过蒸镀或溅射等工艺， 制作 PAD电极 500、 501和 502， 其中电 极 501为 P电极， 位于第一个 LED子芯片单元的外延层之上， 所述 P电极占其所在 LED子芯片单元面积的 80%以上， 优选 90%以上， 直接可以作为引脚电极； 电极 502为 N电极， 位于最后一个 LED子芯片单元的外延层之上， 所述 N电极占其所在 LED子芯片单元面积的 80%以上， 优选 90%以上， 直接可以作为引脚电极； 电极 500可以选用金属或者非金属材料， 当电极 500选用非金属材料， 如透明导电层 IT 0 , 则相邻的 LED子芯片单元通过 ITO导电层即可实现电连接， 该 ITO导电层可 以与电流扩展层 （ITO层） 400通过同一道工艺制作， 如此可以减少金属电极的 遮光， 增加光取出。 所述相邻的 LED子芯片单元的电连接形式包括： 串联或者并 联或者串并联或者其他形式。 本实施例优选串联形式。 [0038] The LED chip unit is formed into an isolation walkway by an etching process, and is divided into four LED chip unit units, wherein the LED chip unit at both ends of the head and the tail does not participate in light emission, and the etching is retained to the N-GaN layer platform. , for subsequently forming a large-area electrode, as a lead electrode; other LED chip unit participates in light emission, and only etches a portion of the exposed N-GaN layer region for forming a conductive layer to electrically connect adjacent LED chip unit; Optionally, a current blocking layer (CB layer) 300, a current spreading layer (ITO layer) 400 are formed on the light emitting epitaxial layer, and finally PAD electrodes 500, 501, and 502 are fabricated by a process such as evaporation or sputtering, wherein the electrode 501 The P electrode is located on the epitaxial layer of the first LED chip unit, and the P electrode occupies more than 80%, preferably 90%, of the area of the LED chip unit where it is located, and can directly serve as a lead electrode; The N electrode is located on the epitaxial layer of the last LED chip unit, and the N electrode accounts for more than 80%, preferably 90%, of the area of the LED chip unit where it is located, and can be directly used as a lead electrode; Or a non-metal material, when the electrode 500 is made of a non-metal material, such as a transparent conductive layer IT 0 , the adjacent LED chip unit can be electrically connected through the ITO conductive layer, the ITO conductive layer 400 to produce the current spreading layer (ITO layer) through the same channel process, so the light shielding metal electrode can be reduced, to increase light extraction. The electrical connection form of the adjacent LED chip unit includes: series or parallel or series-parallel or other forms. This embodiment is preferably in the form of a series.
[0039] 需要说明的是， 所述 LED芯片单元的长度介于 20~60mm， 优选 30~40 mm， 宽 度介于 0.5~3mm， 优选 0.8~1.8mm， LED芯片单元的长度与基板的厚度呈正相关 比例关系， 也就是说， 一般 LED芯片单元的长度越长， 相应的基板厚度越厚， 优 选 LED芯片单元的长度与基板的厚度之比＞50: 1， 更优选为 75: 1或是 100: 1。 本实施例优选 LED芯片单元的长度为 30mm， 宽度为 0.8mm， 厚度为 400—， 贝 IjL ED芯片单元的长度与基板的厚度之比为 75: 1。  [0039] It should be noted that the length of the LED chip unit is 20~60mm, preferably 30~40mm, and the width is 0.5~3mm, preferably 0.8~1.8mm. The length of the LED chip unit is positive with the thickness of the substrate. The proportional relationship, that is, the longer the length of the general LED chip unit, the thicker the corresponding substrate thickness, preferably the ratio of the length of the LED chip unit to the thickness of the substrate is >50:1, more preferably 75:1 or 100. : 1. In this embodiment, the LED chip unit has a length of 30 mm, a width of 0.8 mm, and a thickness of 400 Å. The ratio of the length of the shell IjL ED chip unit to the thickness of the substrate is 75:1.
[0040] 本实施例提供的用于 LED光源的芯片， 其藉由采用至少一串 LED高压芯片单元 设计， 使得 LED芯片单元的长度与光源 （如灯丝） 的长度一致， 从而取代常规的 灯丝光源设计， 且在头、 尾芯片子单元增设引脚电极结构， 通过引脚电极与外 部支架或引线 （图中未示出） 接触， 不需要打线、 固晶等工艺， 进而起到了降 低封装成本、 提高输出光通量和效率的效果。  [0040] The chip for an LED light source provided by the embodiment adopts at least one string of LED high voltage chip unit design, so that the length of the LED chip unit is consistent with the length of the light source (such as a filament), thereby replacing the conventional filament light source. Designed, and the lead electrode structure is added to the head and tail chip sub-units, and the lead electrode is in contact with the external bracket or the lead wire (not shown), and no process such as wire bonding or solid crystal is required, thereby reducing the packaging cost. Improve the output luminous flux and efficiency.
[0041] 实施例 2  Embodiment 2
[0042] 如图 3所示， 本实施例提供一种 LED光源， 所述光源为条状集成光源， 所述条 状集成光源优选为灯丝灯光源。 与实施例 1区别在于， 本实施用于 LED光源的芯 片包括 2串 LED芯片单元， 且第一串芯片的基板 100和第二串芯片的基板 101可以 通过键合层 102背对背键合， 从而使得该灯丝灯光源可以实现 360°全周光出光。 需要说明的是， 由于基板 100与基板 101， 均具有作为 LED芯片的承载基板以及 L ED光源的封装基板的作用， 因此基板 100、 101的总厚度可以与单串 LED芯片单 元的基板厚度相当， 即总厚度大于或者等于 20(Vm即可。 本实施例优选基板总厚 度大约等于 40(Vm， 则基板 100、 101的厚度分别大约等于 20(Vm。 [0042] As shown in FIG. 3, the embodiment provides an LED light source, wherein the light source is a strip-shaped integrated light source, and the strip-shaped integrated light source is preferably a filament light source. The difference from the embodiment 1 is that the chip for the LED light source of the present embodiment includes two strings of LED chip units, and the substrate 100 of the first serial chip and the substrate 101 of the second serial chip can The bonding layer 102 is back-to-back bonded so that the filament light source can achieve 360° full-circumferential light output. It should be noted that since both the substrate 100 and the substrate 101 function as a carrier substrate of the LED chip and a package substrate of the L ED light source, the total thickness of the substrates 100 and 101 may be equivalent to the substrate thickness of the single string LED chip unit. That is, the total thickness is greater than or equal to 20 (Vm. In this embodiment, the total thickness of the substrate is preferably equal to about 40 (Vm), and the thicknesses of the substrates 100 and 101 are respectively equal to about 20 (Vm).
[0043] 所述光源还包括波长转换层 (图中未示出) ， 所述波长转换层由荧光粉和透明 介质混合而成； 所述波长转换层与 LED芯片所发的光匹配， 以得到白光或其它所 需要色的光。  [0043] The light source further includes a wavelength conversion layer (not shown), wherein the wavelength conversion layer is formed by mixing a phosphor and a transparent medium; and the wavelength conversion layer is matched with light emitted by the LED chip to obtain White light or other light of the desired color.
[0044] 需要说明的是本实施例虽然优选 2串高压 LED芯片键合， 但串数不以此为限， 也可以是 3串、 4串、 5串或者更多， 如此则基板可以选用柔性材料， 并将基板制 作成筒状或者柱状结构， 厚度优选 260(Vm， 该筒状或者柱状结构基板的横截面 呈三角形或者四边形或者五边形等， 则高压 LED芯片串分别位于上述筒状或者柱 状结构基板的表面上。  [0044] It should be noted that although the present embodiment is preferably two-series high-voltage LED chip bonding, the number of strings is not limited thereto, and may be three strings, four strings, five strings or more, so that the substrate can be flexible. a material, and the substrate is formed into a cylindrical or columnar structure, preferably having a thickness of 260 (Vm), the cylindrical or columnar structure substrate has a triangular or quadrangular shape or a pentagon in cross section, and the high voltage LED chip strings are respectively located in the above cylindrical shape or On the surface of the columnar structure substrate.
[0045] 本实施例提供的 LED光源， 其采用多串高压芯片作为灯丝灯， 无需多颗串联打 线， 即可实现 360°全周光效果； 此外， 通过控制基板厚度， 使得高压芯片的生长 或承载基板， 可以直接作为封装基板， 而无需固晶在其他额外基板上， 单串 LED 芯片本身即可作为一根灯丝使用， 从而取代常规灯丝光源。 所以， 本实用新型 有效克服了现有技术中的种种缺点而具高度产业利用价值。  [0045] The LED light source provided by the embodiment adopts a plurality of high-voltage chips as the filament lamp, and the 360° full-circumference effect can be realized without multiple series connection; in addition, the growth of the high-voltage chip is controlled by controlling the thickness of the substrate. Or the carrier substrate can be directly used as a package substrate without the need for die bonding on other additional substrates. The single string LED chip itself can be used as a filament to replace the conventional filament source. Therefore, the utility model effectively overcomes various shortcomings in the prior art and has high industrial utilization value.
[0046] 应当理解的是， 上述具体实施方案仅为本实用新型的部分优选实施例， 以上实 施例还可以进行各种组合、 变形。 本实用新型的范围不限于以上实施例， 凡依 本实用新型所做的任何变更， 皆属本实用新型的保护范围之内。  [0046] It should be understood that the above specific embodiments are only some of the preferred embodiments of the present invention, and various combinations and modifications are possible in the above embodiments. The scope of the present invention is not limited to the above embodiments, and any changes made in accordance with the present invention are within the scope of the present invention.

Claims

权利要求书 Claim
[权利要求 1] 一种用于LED光源的芯片， 包括： 至少一串的LED芯片单元， 所述L  [Claim 1] A chip for an LED light source, comprising: at least one string of LED chip units, said L
ED芯片单元包括： 基板和发光外延层， 所述LED芯片单元分为若干 个LED子芯片单元， 其特征在于： 所述基板厚度＞20(Vm。  The ED chip unit includes: a substrate and a light emitting epitaxial layer, the LED chip unit being divided into a plurality of LED chip unit, wherein the substrate has a thickness of >20 (Vm).
[权利要求 2] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述 基板厚度介于 200~600[xm。 [Claim 2] A chip for an LED light source according to claim 1, wherein: the substrate has a thickness of 200 to 600 [ xm.
[权利要求 3] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述 基板作为LED芯片的承载基板以及LED光源的封装基板。 [Claim 3] A chip for an LED light source according to claim 1, wherein the substrate serves as a carrier substrate of the LED chip and a package substrate of the LED light source.
[权利要求 4] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述 基板包括： 透明基板或者不透明基板。 [Claim 4] A chip for an LED light source according to claim 1, wherein: the substrate comprises: a transparent substrate or an opaque substrate.
[权利要求 5] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L [Claim 5] A chip for an LED light source according to claim 1, wherein: said L
ED芯片单元的串数为 2~6串。  The number of strings of the ED chip unit is 2 to 6 strings.
[权利要求 6] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L [Claim 6] A chip for an LED light source according to claim 1, wherein: said L
ED子芯片单元的个数为 10~50个。  The number of ED chip units is 10 to 50.
[权利要求 7] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述 相邻的LED子芯片单元通过导电层实现电连接。 [Claim 7] A chip for an LED light source according to claim 1, wherein: the adjacent LED chip unit is electrically connected by a conductive layer.
[权利要求 8] 根据权利要求 7所述的一种用于LED光源的芯片， 其特征在于： 所述L [Claim 8] A chip for an LED light source according to claim 7, wherein: said L
ED子芯片单元的电连接形式包括： 串联或者并联或者串并联。  The electrical connection form of the ED chip unit includes: series or parallel or series and parallel.
[权利要求 9] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L [Claim 9] A chip for an LED light source according to claim 1, wherein: said L
ED芯片单元的头、 尾LED子芯片单元的电极作为引脚电极。  The electrodes of the head and tail LED chip units of the ED chip unit serve as pin electrodes.
[权利要求 10] 根据权利要求 9所述的一种用于LED光源的芯片， 其特征在于： 所述 引脚电极位于所述发光外延层之上。 [Claim 10] A chip for an LED light source according to claim 9, wherein: said pin electrode is located above said luminescent epitaxial layer.
[权利要求 11] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L [Claim 11] A chip for an LED light source according to claim 1, wherein: said L
ED芯片单元的头、 尾LED子芯片单元的电极面积分别占其头、 尾LE D子芯片单元面积的 80%以上。  The electrode area of the head and tail LED chip unit of the ED chip unit accounts for more than 80% of the area of the head and tail LE D chip units, respectively.
[权利要求 12] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L  [Claim 12] A chip for an LED light source according to claim 1, wherein: said L
ED芯片单元的长度介于 20~60_， 宽度介于 0.5~3mm。  The ED chip unit has a length between 20 and 60 mm and a width between 0.5 and 3 mm.
[权利要求 13] 根据权利要求 1所述的一种用于LED光源的芯片， 其特征在于： 所述L ED芯片单元的长度与基板的厚度呈正相关比例关系。 [Claim 13] A chip for an LED light source according to claim 1, wherein: said L The length of the ED chip unit is positively proportional to the thickness of the substrate.
[权利要求 14] 根据权利要求 13所述的一种用于 LED光源的芯片， 其特征在于： 所述  [Claim 14] A chip for an LED light source according to claim 13, wherein:
LED芯片单元的长度与基板的厚度之比 >50: 1  Ratio of the length of the LED chip unit to the thickness of the substrate >50: 1
[权利要求 15] 一种 LED光源， 包含一个或一个以上权利要求 1-14任一项所述的用于  [Claim 15] An LED light source comprising one or more of the claims 1-14
LED光源的芯片。  LED light source chip.
[权利要求 16] 根据权利要求 15所述的一种 LED光源， 其特征在于： 所述的 LED芯片 单元的基板直接作为封装基板， 无需封装于额外基板上。 [Claim 16] An LED light source according to claim 15, wherein: the substrate of the LED chip unit directly serves as a package substrate, and does not need to be packaged on an additional substrate.
[权利要求 17] 根据权利要求 15所述的一种 LED光源， 其特征在于： 所述基板包括： 透明基板或者不透明基板。 [Claim 17] An LED light source according to claim 15, wherein: the substrate comprises: a transparent substrate or an opaque substrate.
[权利要求 18] 根据权利要求 15所述的一种 LED光源， 其特征在于： 所述光源还包括 波长转换层。 [Claim 18] An LED light source according to claim 15, wherein: said light source further comprises a wavelength conversion layer.
[权利要求 19] 根据权利要求 15所述的一种 LED光源， 其特征在于： 所述光源为条状 集成光源。 [Claim 19] An LED light source according to claim 15, wherein: the light source is a strip-shaped integrated light source.
[权利要求 20] 根据权利要求 19所述的一种 LED光源， 其特征在于： 所述条状集成光 源为灯丝灯光源。  [Claim 20] An LED light source according to claim 19, wherein: the strip-shaped integrated light source is a filament light source.
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