CN201532968U - White light-emitting diode chip - Google Patents
White light-emitting diode chip Download PDFInfo
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- CN201532968U CN201532968U CN2009202401330U CN200920240133U CN201532968U CN 201532968 U CN201532968 U CN 201532968U CN 2009202401330 U CN2009202401330 U CN 2009202401330U CN 200920240133 U CN200920240133 U CN 200920240133U CN 201532968 U CN201532968 U CN 201532968U
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- white light
- emitting diode
- diode chip
- light
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910002601 GaN Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The utility model relates to a white light-emitting diode chip. The white light-emitting diode chip comprises a transparent substrate, wherein a buffer layer, an n-GaN layer, an active layer, a p-GaN layer, a transparent conducting layer are stacked on the upper surface of the transparent substrate in sequence; an n electrode is connected to the upper part of the exposed n-GaN layer; a p electrode is connected above the transparent conducting layer; a first fluorescent bond layer is adhered on the lower surface of the transparent substrate; a reflecting mirror is pasted to the lower surface of the first fluorescent bond layer; and a second fluorescent bond layer is pasted to the transparent conducting layer at the outer part SAof the p electrode. A fluorescent bond layer is pasted between the transparent substrate and the reflecting mirror; and the shortwave long lights (for example, blue, purple or ultraviolet lights) downwards emitted by the active layer are mostly converted into visible lights with longer wavelength due to the introduction of the internal fluorescent bond layer. On the one hand, the probability that the part of lights are absorbed by the active layer in the reflection process to the chip light-emitting surface via the reflecting mirror can be reduced; on the other hand, the rate of blue light to be converted into visible lights with longer wavelength can be increased, thereby improving the luminous efficiency of the white light-emitting diode chip.
Description
Technical field
The utility model relates to the semiconductor light emitting chip, particularly a kind of white light emitting diode chip.
Background technology
In recent years, excite yellow fluorescent powder to generate the main flow that the white light technology has become the semiconductor lighting technology with gallium nitride (GaN) base blue LED (LED).The application need higher-wattage of white light LEDs aspect illumination drives, so its general power-type gallium nitride LED chip of large-size (for example more than 1 * 1mm) that adopts is as excitation source.At present, the power-type gallium nitride LED chip of main flow by structure can be divided into formal dress, upside-down mounting with vertical three types, wherein positive assembling structure is the most general, its application is also comparatively extensive.
As shown in Figure 1, existing formal dress power-type gallium nitride LED chip structure, comprise a Sapphire Substrate 10, Sapphire Substrate 10 has upper and lower two first type surfaces, its upper surface stacks gradually a resilient coating 11, a n-GaN layer 12, a Multiple Quantum Well (MQW) active layer 13, a p-GaN layer 14, a tin indium oxide (ITO) transparency conducting layer 15, one n electrode 16 is positioned on the n-GaN layer 12 of exposure, and a p electrode 17 is positioned on the transparency conducting layer 15; One speculum 20 is formed at the lower surface of Sapphire Substrate.This wherein, the effect of speculum be light reflection that active layer is sent downwards upwards, thereby can penetrate from exiting surface.Speculum is indispensable, because the encapsulation of power-type chip generally adopt heat conductivility preferably elargol carry out solid crystalline substance, but elargol can extinction, if do not add speculum, then the light of active layer emission downwards can most of be absorbed by elargol, thereby has reduced luminous efficiency.But even if the existence of speculum is arranged, the light that active layer is launched downwards and the mirror that is reflected upwards reflects still can be absorbed with bigger probability by active layer, and this is exactly consistent because of catoptrical energy with active layer energy gap itself.As mentioned above, the existing chip structure can limit the lifting of white-light emitting efficient.
Continuous development along with the white light emitting diode correlation technique, at present, wafer scale (Wafer-lever) fluorescent material coating technique has appearred, promptly in light-emitting diode chip for backlight unit manufacturing process, promptly carry out the fluorescent material coating, so just, can a plurality of light-emitting diode chip for backlight unit of disposable coating, with 2 inches wafers is example, then can about 2000 the 1 * 1mm chips of disposable coating, therefore can greatly save manufacturing cost.But the coating of wafer scale fluorescent material generally can only be coated with the front of formal dress light-emitting diode chip for backlight unit, and be converted into wavelength visible except a part through fluorescent material for the blue light of light-emitting diode emission, also have the blue light of most can see through the phosphor powder layer ejaculation in addition, and blue light is less for the contribution of light efficiency, if, then can significantly improve light efficiency so its major part can be converted into wavelength visible
The utility model content
The lower problem of luminous efficiency for solving above-mentioned white light-emitting diodes the utility model proposes a kind of white light emitting diode chip.
The technical scheme in the invention for solving the above technical problem is: a kind of white light emitting diode chip, comprise a transparent substrates, its upper surface has stacked gradually resilient coating, n-GaN layer, active layer, p-GaN layer, transparency conducting layer, the n electrode is connected on the n-GaN layer of exposure, and the p electrode is connected on the transparency conducting layer; It is characterized in that: the lower surface in transparent substrates is bonded with the first fluorescence glue-line, and speculum is bonded in the lower surface of the first fluorescence glue-line; On the transparency conducting layer outside the p electrode, be bonded with the second fluorescence glue-line.
Transparent substrates of the present utility model is selected from sapphire, carborundum, zinc oxide or gallium nitride; The fluorescence glue-line is a fluorescent material and the lamina that mixes of glue, and fluorescent material wherein can absorb the luminous of active layer and mix with it and produce white light.
The beneficial effects of the utility model are: a bonding fluorescence glue-line between transparent substrates and speculum, introducing by this built-in fluorescence glue-line, the short-wavelength light (as indigo plant, purple or ultraviolet light) that active layer is launched downwards changes into the long visible light of wavelength most ofly, can reduce the probability that this part light is absorbed by active layer in chip light-emitting surface reflection process through speculum on the one hand, can increase the ratio that blue light is converted into wavelength visible on the other hand, thereby improve luminous efficiency of the present utility model.
Description of drawings
Fig. 1 is existing formal dress power-type gallium nitride LED chip structural representation;
Fig. 2 is the gallium nitride LED chip structural representation of the utility model embodiment;
The luminous model schematic diagram of Fig. 3 the utility model embodiment and existing light-emitting diode chip for backlight unit;
Among the figure: 10. Sapphire Substrate; 11. resilient coating; 12.n-GaN layer; 13. multiple quantum well layer; The 14:p-GaN layer; 15.ITO transparency conducting layer; 16.N electrode; 17.P electrode; 20. speculum; 30. the first fluorescence glue-line; 40. the second fluorescence glue-line.
Embodiment
Below in conjunction with drawings and Examples the utility model is further specified.
A kind of white light emitting diode chip structure as shown in Figure 2, comprise a transparent Sapphire Substrate 10, the upper surface of Sapphire Substrate 10 has stacked gradually resilient coating 11, n-GaN layer 12, Multiple Quantum Well (MQW) active layer 13, p-GaN layer 14, ITO transparency conducting layer 15; The material of active layer 13 is Al
xIn
yGa
1-x-yN, wherein 0＜x＜1,0＜y＜1, corresponding luminous dominant wavelength is the blue light of 460nm; N electrode 16 is connected on the n-GaN layer 12 of exposure, and the material of n electrode 16 is Cr/Pt/Au; P electrode 17 is connected on the ITO transparency conducting layer 15, and the material of p electrode 17 is Cr/Pt/Au; Lower surface in Sapphire Substrate 10 is bonded with the first fluorescence glue-line 30, and the speculum 20 that the Al material makes is bonded in the lower surface of the first fluorescence glue-line 30; On the ITO transparency conducting layer 15 outside the p electrode 17, be bonded with the second fluorescence glue-line 40, the first fluorescence glue-line 30 of the present utility model, the second fluorescence glue-line 40 are the lamina that mixes of fluorescent material and glue, fluorescent material wherein can absorb the luminous of active layer 13 and mix produce white light with it, and fluorescence glue- line 30,40 is YAG fluorescent material and insulation crystal-bonding adhesive mixes in the utility model.
In the middle of present embodiment, the size of chip is 1mm * 1mm, so multiple quantum well active layer 13 mainly sends blue light to upper and lower two surface direction of chip, and intensity can regard consistent as.As shown in Figure 3, luminous illustraton of model for the utility model and existing power type light-emitting diode chip, as can be seen from the figure: for two kinds of chips, the light of upwards launching from active layer 13 can directly penetrate by exiting surface, and the light that active layer 13 is launched downwards, then must penetrate to exiting surface again through active layer 13 by upwards reflection of speculum 20.Both differences are, for existing power type light-emitting diode, remain blue light through the light of speculum 20 reflections, and these blue lights have certain ratio and absorbed by active layer 13 through multiple quantum well active layer 13 time; And for the utility model, the light of active layer 13 emission downwards is by the absorption of the YAG fluorescent material in the first fluorescence glue-line 30 and change into white light, and this white light mainly is to be formed by gold-tinted and blue light, and the shared ratio of gold-tinted is higher, because the energy of gold-tinted is less than the energy gap of active layer 13, so active layer 13 does not absorb gold-tinted basically, though still have a certain proportion of blue light to be absorbed by active layer 13, but because blue light shared ratio is seldom in white light, so generally, upwards the ratio that absorbed by active layer 13 of the light of reflection is just seldom through speculum 20.On the other hand, because the blue light major part that the first fluorescence glue-line 30 will be launched downwards transfers white light to, so the white light transformation efficiency of the utility model luminescence chip is higher.
Claims (3)
1. a white light emitting diode chip comprises a transparent substrates, and its upper surface has stacked gradually resilient coating, n-GaN layer, active layer, p-GaN layer, transparency conducting layer, and the n electrode is connected on the n-GaN layer of exposure, and the p electrode is connected on the transparency conducting layer; It is characterized in that: the lower surface in transparent substrates is bonded with the first fluorescence glue-line, and speculum is bonded in the lower surface of the first fluorescence glue-line; On the transparency conducting layer outside the p electrode, be bonded with the second fluorescence glue-line.
2. a kind of white light emitting diode chip as claimed in claim 1, it is characterized in that: transparent substrates is selected from sapphire, carborundum, zinc oxide or gallium nitride.
3. a kind of white light emitting diode chip as claimed in claim 1 is characterized in that: the fluorescence glue-line is a fluorescent material and the lamina that mixes of glue, and fluorescent material wherein can absorb the luminous of active layer and mix with it and produce white light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202401330U CN201532968U (en) | 2009-10-20 | 2009-10-20 | White light-emitting diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202401330U CN201532968U (en) | 2009-10-20 | 2009-10-20 | White light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201532968U true CN201532968U (en) | 2010-07-21 |
Family
ID=42528369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202401330U Expired - Lifetime CN201532968U (en) | 2009-10-20 | 2009-10-20 | White light-emitting diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201532968U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255017A (en) * | 2010-05-20 | 2011-11-23 | Lg伊诺特有限公司 | Light-emitting device |
| CN104091875A (en) * | 2014-07-04 | 2014-10-08 | 厦门市三安光电科技有限公司 | LED packaging structure |
| CN106784240A (en) * | 2016-12-23 | 2017-05-31 | 佛山市国星光电股份有限公司 | The method for packing and its LED component and its LED of a kind of white light LED part |
| WO2021197101A1 (en) * | 2020-04-03 | 2021-10-07 | 华为技术有限公司 | Led device and manufacturing method therefor, display module, and terminal |
| CN114361313A (en) * | 2022-01-04 | 2022-04-15 | 南京邮电大学 | Luminescence filtering integrated photoelectronic chip and preparation method thereof |
-
2009
- 2009-10-20 CN CN2009202401330U patent/CN201532968U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255017A (en) * | 2010-05-20 | 2011-11-23 | Lg伊诺特有限公司 | Light-emitting device |
| CN102255017B (en) * | 2010-05-20 | 2015-11-25 | Lg伊诺特有限公司 | Luminescent device |
| CN104091875A (en) * | 2014-07-04 | 2014-10-08 | 厦门市三安光电科技有限公司 | LED packaging structure |
| CN106784240A (en) * | 2016-12-23 | 2017-05-31 | 佛山市国星光电股份有限公司 | The method for packing and its LED component and its LED of a kind of white light LED part |
| CN106784240B (en) * | 2016-12-23 | 2019-01-01 | 佛山市国星光电股份有限公司 | The packaging method and its LED component and its LED light of a kind of white light LED part |
| WO2021197101A1 (en) * | 2020-04-03 | 2021-10-07 | 华为技术有限公司 | Led device and manufacturing method therefor, display module, and terminal |
| CN114361313A (en) * | 2022-01-04 | 2022-04-15 | 南京邮电大学 | Luminescence filtering integrated photoelectronic chip and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Anhui San'an Optoelectronics Co., Ltd. Assignor: Xiamen San'an Photoelectric Technology Co., Ltd. Contract record no.: 2011340000047 Denomination of utility model: White light-emitting diode chip Granted publication date: 20100721 License type: Exclusive License Record date: 20110617 |
|
| CX01 | Expiry of patent term |
Granted publication date: 20100721 |
|
| CX01 | Expiry of patent term |