CN202585519U - LED with reflective electrode - Google Patents
LED with reflective electrode Download PDFInfo
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- CN202585519U CN202585519U CN 201220172264 CN201220172264U CN202585519U CN 202585519 U CN202585519 U CN 202585519U CN 201220172264 CN201220172264 CN 201220172264 CN 201220172264 U CN201220172264 U CN 201220172264U CN 202585519 U CN202585519 U CN 202585519U
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Abstract
The utility model discloses an LED with a reflective electrode and the LED comprises a luminescence epitaxial layer, wherein the luminescence epitaxial layer comprises a first semiconductor layer, a second semiconductor layer and a luminescent layer between two layers. The LED with the reflective electrode is characterized in that the LED also comprises an electrode structure, consisting of a golden electrode and a nickel reflective layer, wherein the nickel reflective layer enwraps the whole golden electrode. The LED with the reflective electrode provided by the utility model uses a chemical nickel plating manner to enwrap the whole metal electrode, so that an absorbed part of light emitted to the metal electrode will be reduced and reflective light will be increased, thereby increasing light transmission. Through experimental verification, light intensity can be raised 5%.
Description
Technical field
The present invention relates to a kind of light-emitting diode, more particularly, relate to a kind of light-emitting diode with reflection electrode.
Background technology
Light-emitting diode (English is Light Emitting Diode, be called for short LED) is a kind of of semiconductor diode, and it can be converted into luminous energy with electric energy, sends versicolor visible light and infrared and ultraviolet invisible lights such as Huang, green, indigo plant.Compare with small filament lamp bubble and neon lamp, it has operating voltage and electric current is low, reliability is high, the life-span is long and advantage such as conveniently adjusted luminosity.
At present, gallium nitride base light emitting two look utmost point pipes mainly adopt gold electrode.Though the electrical conductivity of metal is higher, penetration depth is more shallow, and reflectivity (reflectivity) is just higher thereupon.But when wavelength during less than 500nm, the reflectivity of gold will reduce (being lower than 40%) greatly, and this is quite disadvantageous for blue-ray LED.Please refer to accompanying drawing 1, the blue light that is transmitted on the metal electrode from LED has greatly and can be absorbed by Au, thereby greatly reduces the luminous efficiency of light-emitting diode.
Summary of the invention
The object of the invention promptly is to improve the above-mentioned limitation of prior art, and a kind of light-emitting diode with highly reflective electrode is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of light-emitting diode with reflecting electrode; Comprise luminous epitaxial loayer; It comprises first semiconductor layer, second semiconductor layer and is clipped in the luminescent layer between two-layer; It is characterized in that: also comprise electrode structure, it is made up of a gold electrode and a nickel reflector, and said nickel reflector wraps up said whole gold electrode.
In the present invention, said luminous epitaxial loayer is a gallium nitride-based semiconductor, and the wavelength of the light wave of its emission is less than 500nm, and the thickness in said nickel reflector is 50 ~ 5000 dusts.
In blue segments, the reflectivity of nickel is far above gold (about about 55%).The present invention uses the mode of chemical nickel plating that whole metal electrode is wrapped up, and the absorbed part of light that is transmitted into like this on the metal electrode will reduce, and the light that reflects will increase, thereby increases bright dipping.Through experimental verification, can improve about 5% light intensity.Figure two can increase the rough schematic of bright dipping for chemical plating nickel metal electrode.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
A kind of bright dipping sketch map of Fig. 1 with light-emitting diode of traditional electrode structure.
A kind of bright dipping sketch map that Fig. 2 the present invention implements with light-emitting diode of reflecting electrode.
Parts symbol description among the figure:
100: traditional light-emitting diode; 110,210: luminous epitaxial loayer; 120,220: gold electrode; 130,230: light; 200: light-emitting diode with reflecting electrode; 240: the nickel reflector.
Embodiment
Below will combine accompanying drawing and embodiment to specify execution mode of the present invention, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can make much of and implement according to this.
As shown in Figure 2, a kind of light-emitting diode 200 with reflecting electrode comprises luminous epitaxial loayer 210, gold electrode 220, nickel reflector 240.Luminous epitaxial loayer 210 can be deposited on growth substrates (accompanying drawing does not illustrate) through epitaxial growth (like MOCVD) and go up or be bonded on the radiating substrate through Flip Chip.Luminous epitaxial film materials is a gan-based compound, generally comprises n-GaN layer, mqw light emitting layer, p-GaN layer.Gold electrode 220 generally can be formed on the luminous epitaxial loayer 210, is used to be communicated with external power source, excites p-n luminous.Nickel reflector 240 wraps up whole gold electrode 220, and its thickness can be 50 ~ 5000 dusts.Adopt the mode of chemical nickel plating, utilize nickel higher, can improve the blue light light extraction efficiency effectively blue wave band luminance factor Au.
Clearly, explanation of the present invention should not be construed as and is limited only within the foregoing description, but comprises the whole execution modes that utilize the present invention to conceive.
Claims (5)
1. light-emitting diode with reflecting electrode; Comprise luminous epitaxial loayer; It comprises first semiconductor layer, second semiconductor layer and is clipped in the luminescent layer between two-layer; It is characterized in that: also comprise electrode structure, it is made up of a gold electrode and a nickel reflector, and said nickel reflector wraps up said whole gold electrode.
2. a kind of light-emitting diode with reflecting electrode according to claim 1 is characterized in that: said luminous epitaxial loayer is a gallium nitride-based semiconductor.
3. a kind of light-emitting diode with reflecting electrode according to claim 1, it is characterized in that: the wavelength of the light that said lumination of light emitting diode is launched is less than 500nm.
4. a kind of light-emitting diode with reflecting electrode according to claim 1 is characterized in that: said light-emitting diode is the blue light series LED.
5. a kind of light-emitting diode with reflecting electrode according to claim 1 is characterized in that: the thickness in said nickel reflector is 50 ~ 5000 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220172264 CN202585519U (en) | 2012-04-23 | 2012-04-23 | LED with reflective electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220172264 CN202585519U (en) | 2012-04-23 | 2012-04-23 | LED with reflective electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202585519U true CN202585519U (en) | 2012-12-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220172264 Expired - Lifetime CN202585519U (en) | 2012-04-23 | 2012-04-23 | LED with reflective electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202585519U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018006535A (en) * | 2016-06-30 | 2018-01-11 | ウシオ電機株式会社 | Semiconductor light-emitting device |
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| CN110289254A (en) * | 2019-06-27 | 2019-09-27 | 京东方科技集团股份有限公司 | It is micro-led and preparation method thereof |
-
2012
- 2012-04-23 CN CN 201220172264 patent/CN202585519U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018006535A (en) * | 2016-06-30 | 2018-01-11 | ウシオ電機株式会社 | Semiconductor light-emitting device |
| JP2021129121A (en) * | 2016-06-30 | 2021-09-02 | ウシオ電機株式会社 | Light irradiation device |
| JP7228120B2 (en) | 2016-06-30 | 2023-02-24 | ウシオ電機株式会社 | Light irradiation device |
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| CN110289254A (en) * | 2019-06-27 | 2019-09-27 | 京东方科技集团股份有限公司 | It is micro-led and preparation method thereof |
| US11417797B2 (en) | 2019-06-27 | 2022-08-16 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Micro light emitting diode and manufacture method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhuang Jiaming Inventor after: Xu Chenke Inventor after: Huang Huikui Inventor after: Fan Huili Inventor after: Wang Anping Inventor before: Zhuang Jiaming Inventor before: Wang Zhenzu Inventor before: Huang Huikui Inventor before: Fan Huili Inventor before: Wang Anping |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHUANG JIAMING WANG ZHENZU HUANG HUIKUI FAN HUILI WANG ANPING TO: ZHUANG JIAMING XU CHENKE HUANG HUIKUI FAN HUILI WANG ANPING |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121205 |