CN104064641B - The production method of through hole vertical-type LED - Google Patents
The production method of through hole vertical-type LED Download PDFInfo
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- CN104064641B CN104064641B CN201410318439.9A CN201410318439A CN104064641B CN 104064641 B CN104064641 B CN 104064641B CN 201410318439 A CN201410318439 A CN 201410318439A CN 104064641 B CN104064641 B CN 104064641B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 229910001020 Au alloy Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910015269 MoCu Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000009738 saturating Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 4
- 241000218202 Coptis Species 0.000 abstract description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 abstract description 3
- 239000010931 gold Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention proposes a kind of production method of through hole vertical-type LED,Before N electrode and P electrode is formed,Using through hole technology,In the bonded substrate,Through hole is formed in articulamentum and epitaxial layer,Through hole exposes N GaN or transparent conductive film,Then passivation layer is formed in through-hole side wall and bonded substrate part surface,Then in through hole and passivation layer surface formed N electrode,And P electrode is formed on the bonded substrate,N electrode is connected with N GaN or transparent conductive film,So as to which N electrode be drawn from bonded substrate by through hole,Reduce stop of the N electrode to light-emitting surface light extraction,Improve external quantum efficiency,At the same time,N electrode is formed in bonded substrate surface,The follow-up packaged type for using Reflow Soldering,It is packaged without routing technique,Therefore,Avoid damage of the routing to epitaxial layer,Reduce the gold thread cost of packaging technology.
Description
Technical field
The present invention relates to LED production fields, more particularly to a kind of production method of through hole vertical-type LED.
Background technology
In recent years, the research for high-power lighting LED (Light-Emitting Diode, LED) into
For trend, however tradition with side structure LED chip there are current crowding, overtension and heat dissipation are difficult the shortcomings of, it is difficult to meet
Powerful demand, and vertical-type LED chip can not only efficiently solve the crowding effect under Bulk current injection, can also delay
Solving the internal quantum efficiency caused by Bulk current injection reduces, and improves the photoelectric properties of vertical-type LED chip.GaN base vertical stratification
LED there is good heat dissipation, high current can be carried, the advantages that luminous intensity is high, and power consumption is small, long lifespan, in general illumination, scape
Take into consideration in bright, special lighting, automotive lighting and be widely used.
The preparation process of vertical-type LED chip is mainly that (generally sapphire material) growth GaN exists on substrate at present
Contact layer and metal reflective mirror layer are made on the GaN base epitaxial layer, then using plating or substrate bonding (Wafer bonding)
Mode make the good heat-conducting substrate of heat conductivility, while also serve as the new substrate of GaN base epitaxial layer, then pass through laser lift-off
Method separate Sapphire Substrate and GaN base epitaxial layer, epitaxial layer is transferred on metal substrate, so that LED chip
Heat dissipation performance more preferably can re-form N electrode afterwards.
Specifically, please referring to Fig.1, Fig. 1 is the structure diagram of vertical-type LED chip in the prior art；The structure bag
Sequentially connected P electrode 10, p-type GaN20, Quantum Well 30, N-type GaN40 and N electrode 50 are included, wherein, 10 shape of P electrode
Described in Cheng Yu on p-type GaN20, N electrode 50 is formed on the N-type GaN40, and both are located at two different faces of LED chip.
Such a vertical-type LED chip light extraction face is N-type GaN40.Due to the presence of N-type GaN40 faces N electrode 50, meeting stop part is divided
Outgoing, therefore reduce external quantum efficiency.
At present, vertical-type LED generally uses laser lift-off (LLO) technology is made after grown epitaxial layer on a sapphire substrate
Original Sapphire Substrate is peeled off, epitaxial layer is transferred on thermal conductivity and the more preferable Si or WCu substrates of electric conductivity.Due to vertical
After type LED chip laser lift-off, N-type GaN40 films easily cause N-type than relatively thin when being packaged routing to N electrode 40
GaN40 occurs secretly splitting or other damages, so as to cause the yields of LED chip than relatively low.
The content of the invention
It is an object of the invention to provide a kind of production method of through hole vertical-type LED, reduces stop of the N electrode to light,
External quantum efficiency is improved, increases luminosity, and avoid damage of the routing to epitaxial layer.
To achieve these goals, the present invention proposes a kind of production method of through hole vertical-type LED, including step：
Growth substrates are provided, the growth substrates successively on formed with epitaxial layer, articulamentum and bonded substrate, it is described outer
Prolonging layer includes N-GaN, Quantum Well and P-GaN, and the P-GaN is connected with the articulamentum, and the Quantum Well is formed at the N-
Between GaN and P-GaN；
The growth substrates are removed, expose the N-GaN；
Transparent conductive film is formed on the N-GaN surfaces；
The bonded substrate, articulamentum and epitaxial layer are sequentially etched, forms through hole, the through hole exposes the N-GaN
Or transparent conductive film；
Passivation layer is formed in the side wall of the through hole and the part surface of bonded substrate；
N electrode and P electrode are formed, the N electrode is formed in the surface with passivation layer in the through hole, with the N-GaN
Or transparent conductive film is connected, the P electrode is connected with the bonded substrate.
Further, the growth substrates are Al2O3, Si or SiC.
Further, the articulamentum includes current extending, speculum and metal bonding layer successively, and the electric current expands
Exhibition layer is connected with the P-GaN, and the speculum is between the current extending and metal bonding layer.
Further, the current extending is ITO, ZnO or AZO.
Further, the speculum is Al, Ag or DBR.
Further, the metal bonding layer is Au/Au alloys or Au/Sn alloys.
Further, the bonded substrate is Si, Cu, WCu or MoCu.
Further, the growth substrates are removed using laser or chemically mechanical polishing.
Further, the transparent conductive film is ITO, ZnO or Ni/Au alloy.
Further, the passivation layer is SiO2, SiN or TiN.
Compared with prior art, the beneficial effects are mainly as follows：Before N electrode and P electrode is formed, use
Through hole technology, forms through hole, through hole exposes N-GaN or electrically conducting transparent is thin in the bonded substrate, articulamentum and epitaxial layer
Film, then forms passivation layer in through-hole side wall and bonded substrate part surface, then in through hole and passivation layer surface shape
Into N electrode, and P electrode is formed on the bonded substrate, N electrode is connected with N-GaN or transparent conductive film, so that will by through hole
N electrode is drawn from bonded substrate, is reduced stop of the N electrode to light-emitting surface light extraction, is improved external quantum efficiency, meanwhile, by N electricity
Pole is formed in bonded substrate surface, and the follow-up packaged type for using Reflow Soldering, is packaged without routing technique, therefore,
Damage of the routing to epitaxial layer is avoided, reduces the gold thread cost of packaging technology.
Brief description of the drawings
Fig. 1 is the structure diagram of vertical-type LED chip in the prior art；
Fig. 2 is the flow chart of the production method of through hole vertical-type LED in one embodiment of the invention；
Fig. 3 to Fig. 8 is the diagrammatic cross-section in through hole vertical-type LED manufacturing process in one embodiment of the invention.
Embodiment
The production method of the through hole vertical-type LED of the present invention is described in more detail below in conjunction with schematic diagram, its
In illustrate the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and
Still the advantageous effects of the present invention are realized.Therefore, description below is appreciated that knowing extensively for those skilled in the art
Road, and it is not intended as limitation of the present invention.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expends
Time, but it is only to those skilled in the art routine work.
More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Please refer to Fig.2, in the present embodiment, it is proposed that a kind of production method of through hole vertical-type LED, including step：
S100：Growth substrates are provided, the growth substrates successively on formed with epitaxial layer, articulamentum and bonded substrate,
The epitaxial layer includes N-GaN, Quantum Well and P-GaN, and the P-GaN is connected with the articulamentum, and the Quantum Well is formed at
Between the N-GaN and P-GaN；
S200：The growth substrates are removed, expose the N-GaN；
S300：Transparent conductive film is formed on the N-GaN surfaces；
S400：The bonded substrate, articulamentum and epitaxial layer are sequentially etched, forms through hole, the through hole exposes described
N-GaN or transparent conductive film；
S500：Passivation layer is formed in the side wall of the through hole and the part surface of bonded substrate；
S600：Form N electrode and P electrode, the N electrode is formed in the through hole and the surface of passivation layer, and described
N-GaN or transparent conductive film are connected, and the P electrode is connected with the bonded substrate.
Specifically, please referring to Fig.3, in the step s 100, the growth substrates 100 are usually Al2O3Substrate, Si substrates,
SiC substrate or patterned substrate, are preferably Al in the present embodiment2O3；Formed with undoped layer in the growth substrates 100
(not shown) and epitaxial layer 200, wherein, the epitaxial layer 200 includes N-GaN, Quantum Well and the P-GaN sequentially formed, institute
Undoped layer is stated with the N-GaN to be connected.
Please continue to refer to Fig. 3, the articulamentum 300 includes current extending, speculum and metal bonding layer, institute successively
State current extending with the P-GaN to be connected, the speculum is between the current extending and metal bonding layer；It is described
Current extending is ITO, ZnO or AZO, and the speculum is Al, Ag or DBR (distribution Bragg reflector), the metallic bond
It is Au/Au alloys or Au/Sn alloys to close layer；The bonded substrate 400 is Si, Cu, WCu or MoCu.
Please refer to Fig.4, in step s 200, the growth substrates are removed using laser or chemically mechanical polishing (CMP)
100, expose the N-GaN of the epitaxial layer 200.
Fig. 5 is refer to, in step S300, transparent conductive film (TCL) 500 is formed on the N-GaN surfaces, it is described
Bright conductive film 500 is ITO, ZnO or Ni/Au alloy.
Fig. 6 is refer to, in step S400, is sequentially etched the bonded substrate 400, articulamentum 300 and epitaxial layer 200,
Through hole 600 is formed, the through hole 600 exposes the N-GaN or transparent conductive film 500, in the present embodiment, using dry method
(ICP) or wet etching forms the through hole 600.
Fig. 7 is refer to, passivation layer 700, institute are formed in the side wall of the through hole 600 and the part surface of bonded substrate 400
State passivation layer 700 and expose the N-GaN or transparent conductive film 500, while expose most of bonded substrate 400
Surface, the passivation layer 700 are SiO2, SiN or TiN.
Fig. 8 is refer to, in step S600, the N electrode 820 is formed in the table with passivation layer 700 in the through hole 600
Face, is connected with the N-GaN or transparent conductive film 500, but with the bonded substrate 400, articulamentum 300 and epitaxial layer 200
Isolated by the passivation layer 700, the ratio that the N-GaN accounts for 400 surface of bonded substrate is smaller；The P electrode 810 with
The bonded substrate 400 is connected, so as to form vertical-type LED.
To sum up, in the production method of through hole through hole vertical-type LED provided in an embodiment of the present invention, N electrode and P are being formed
Before electrode, using through hole technology, through hole is formed in the bonded substrate, articulamentum and epitaxial layer, through hole exposes N-GaN
Or transparent conductive film, then form passivation layer in through-hole side wall and bonded substrate part surface, then in through hole and
Passivation layer surface forms N electrode, and forms P electrode on the bonded substrate, and N electrode is connected with N-GaN or transparent conductive film, from
And drawn N electrode from bonded substrate by through hole, reduce stop of the N electrode to light-emitting surface light extraction, improve outer quantum effect
Rate, meanwhile, N electrode is formed in bonded substrate surface, the follow-up packaged type for using Reflow Soldering, without routing technique into
Row encapsulation, therefore, avoids damage of the routing to epitaxial layer, reduces the gold thread cost of packaging technology.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (10)
1. a kind of production method of through hole vertical-type LED, including step：
There is provided growth substrates, the growth substrates successively on formed with epitaxial layer, articulamentum and bonded substrate, the epitaxial layer
Including N-GaN, Quantum Well and P-GaN, the P-GaN is connected with the articulamentum, the Quantum Well be formed at the N-GaN and
Between P-GaN；
The growth substrates are removed, expose the N-GaN；
Transparent conductive film is formed on the N-GaN surfaces；
The bonded substrate, articulamentum and epitaxial layer are sequentially etched, forms through hole, the through hole exposes the N-GaN or saturating
Bright conductive film；
Passivation layer is formed in the side wall of the through hole and the part surface of bonded substrate；
N electrode and P electrode are formed, the N electrode is formed in the surface with passivation layer in the through hole, with the N-GaN or thoroughly
Bright conductive film is connected, and the P electrode is connected with the bonded substrate.
2. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that the growth substrates are Al2O3、
Si or SiC.
3. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that the articulamentum includes successively
Current extending, speculum and metal bonding layer, the current extending are connected with the P-GaN, and the speculum is located at
Between the current extending and metal bonding layer.
4. the production method of through hole vertical-type LED as claimed in claim 3, it is characterised in that the current extending is
ITO, ZnO or AZO.
5. the production method of through hole vertical-type LED as claimed in claim 3, it is characterised in that the speculum for Al, Ag or
DBR。
6. the production method of through hole vertical-type LED as claimed in claim 3, it is characterised in that the metal bonding layer is Au/
Au alloys or Au/Sn alloys.
7. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that the bonded substrate for Si,
Cu, WCu or MoCu.
8. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that using laser or chemical machine
Tool polishing removes the growth substrates.
9. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that the transparent conductive film is
ITO, ZnO or Ni/Au alloy.
10. the production method of through hole vertical-type LED as claimed in claim 1, it is characterised in that the passivation layer is SiO2、
SiN or TiN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410318439.9A CN104064641B (en) | 2014-07-04 | 2014-07-04 | The production method of through hole vertical-type LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410318439.9A CN104064641B (en) | 2014-07-04 | 2014-07-04 | The production method of through hole vertical-type LED |
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| Publication Number | Publication Date |
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| CN104064641A CN104064641A (en) | 2014-09-24 |
| CN104064641B true CN104064641B (en) | 2018-04-27 |
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| CN201410318439.9A Expired - Fee Related CN104064641B (en) | 2014-07-04 | 2014-07-04 | The production method of through hole vertical-type LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105023975B (en) * | 2015-06-08 | 2017-10-27 | 严敏 | A kind of manufacture method of red flip chip and red flip chip |
| US20200243736A1 (en) * | 2017-01-12 | 2020-07-30 | Enkris Semiconductor, Inc. | Semiconductor device and fabrication method for the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851948A (en) * | 2006-05-29 | 2006-10-25 | 金芃 | Through-hole ventical structure semiconductor chip and device |
| CN1905224A (en) * | 2006-08-01 | 2007-01-31 | 金芃 | Semiconductor chip or device with vertical structure through-hole |
| CN102969418A (en) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | Structure of gallium nitride based light-emitting diode with 3D (Three-Dimensional) vertical structure |
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2014
- 2014-07-04 CN CN201410318439.9A patent/CN104064641B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851948A (en) * | 2006-05-29 | 2006-10-25 | 金芃 | Through-hole ventical structure semiconductor chip and device |
| CN1905224A (en) * | 2006-08-01 | 2007-01-31 | 金芃 | Semiconductor chip or device with vertical structure through-hole |
| CN102969418A (en) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | Structure of gallium nitride based light-emitting diode with 3D (Three-Dimensional) vertical structure |
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