CN208208785U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN208208785U CN208208785U CN201820332254.7U CN201820332254U CN208208785U CN 208208785 U CN208208785 U CN 208208785U CN 201820332254 U CN201820332254 U CN 201820332254U CN 208208785 U CN208208785 U CN 208208785U
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- 239000000463 material Substances 0.000 claims abstract description 78
- 239000011241 protective layer Substances 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims description 132
- 238000002161 passivation Methods 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 8
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 8
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229920002577 polybenzoxazole Polymers 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 229920005570 flexible polymer Polymers 0.000 claims description 4
- 230000003760 hair shine Effects 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000000183 1,3-benzoxazoles Chemical class 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
The utility model provides a kind of light emitting diode, and the light emitting diode includes: epitaxial light emission structure；Electrode pad is formed on the epitaxial light emission structure and is electrically connected with the epitaxial light emission structure；And flexible material side wall protective layer, it is coated on the side wall of the electrode pad.The utility model is by being arranged flexible material side wall protective layer in electrode pad side wall; during soldered ball, electrode pad edge is avoided the problems such as cracking by flexible material side wall protective layer buffer protection; air and steam can effectively be completely cut off, can effectively promote the reliability of LED chip.
Description
Technical field
The utility model belongs to field of semiconductor illumination, more particularly to a kind of light emitting diode of flexible material protection.
Background technique
Semiconductor lighting has the remarkable advantages such as service life length, energy-saving and environmental protection, safety as new and effective solid light source, will
Leaping again after incandescent lamp, fluorescent lamp in history is illuminated as the mankind, application field is expanding rapidly, positive to drive
The upgrading of the industries such as traditional lighting, display, economic benefit and social benefit are huge.Just because of this, semiconductor lighting quilt
Generally regard that one of 21 century new industry most with prospects and the most important system of coming years optoelectronic areas are high as
One of point.Light-emitting diode LED is usually by such as GaN (gallium nitride), GaAs (GaAs), GaP (gallium phosphide), GaAsP (phosphorus arsenic
Change gallium) etc. made of semiconductors, core is the PN junction with the characteristics of luminescence, and under forward voltage, electronics injects the area P by the area N,
The area N is injected by the area P in hole, and minority carrier a part and majority carrier into other side region are compound and luminous.
Under the raised once again background of worry of Present Global energy shortage, energy saving to be that we will face in future important
Problem, in lighting area, LED is referred to as forth generation lighting source or green light source, has energy-saving and environmental protection, service life long, small in size
The features such as, it can be widely applied to the fields such as various instructions, display, decoration, backlight, general lighting and urban landscape.
In LED chip wire bonding process, soldered ball (Bonding Ball) 103 can squeeze electrode pad (PAD) 101, electrode weldering
101 bottom of disk (PAD) can squeeze outward passivation layer 102 because of the extruding of soldered ball, lead to the blunt of 101 edge of electrode pad (PAD)
Change layer 102 to crack.In LED use process, steam, salinity of the ion containing Cl etc. are understood in erosion electrode pad (PAD) 101 structure
More active metal Al, Ag etc. make it be bubbled or migrate, the failure of LED core particle are eventually led to, as shown in Fig. 1 a and Fig. 1 b.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of light emitting diodes, use
The passivation layer fragmentation during solving the problems, such as LED core particle soldered ball in the prior art.
In order to achieve the above objects and other related objects, the utility model provides a kind of light emitting diode, described to shine two
Pole pipe includes: epitaxial light emission structure；Electrode pad is formed on the epitaxial light emission structure and electric with the epitaxial light emission structure
Property connection；And flexible material side wall protective layer, it is coated on the side wall of the electrode pad.
Preferably, the tensile strength of the flexible material side wall protective layer is not less than 50Mpa；Maximum operating temperature is not less than
260 DEG C of Reflow Soldering temperature；Water absorption rate is not more than 0.5%.
Preferably, the flexible material side wall protective layer include flexible polymer Parylene layer, thermoset polyimide layer,
One of polybenzoxazoles layer, polyphenylene sulfide ether layer, layer of silica gel or the medium oxidizing graphene layer of flexible inorganic, carbon nanotube layer or
Combination.
Preferably, the light emitting diode further includes inorganic medium surface passivation layer, is covered in the epitaxial light emission structure
Surface, to be passivated the epitaxial light emission structure surface.
Preferably, the inorganic medium surface passivation layer includes SiO2Layer, SiN layer, SiON layers, Al2O3Layer, TiO2In layer
One kind or combination.
Preferably, the light emitting diode further includes flexible material surface passivation layer, is covered in the epitaxial light emission structure
Surface, to be passivated the epitaxial light emission structure surface.
Preferably, the flexible material surface passivation layer and the flexible material side wall protective layer are integrally formed.
Preferably, the thickness range of the flexible material surface passivation layer is between 50~500nm.
Preferably, the thickness of the flexible material surface passivation layer meets formula d=(2k-1) λ/4n, and wherein d is described
The thickness of flexible material surface passivation layer, k are positive integer, and λ is the emission wavelength of the epitaxial light emission structure, and n is the flexibility
The refractive index of material surface passivation layer.
Preferably, the light emitting diode further includes inorganic medium protective layer, and the inorganic medium protective layer is covered in institute
State flexible material protective layer and the flexible material surface passivation layer surface.
Preferably, the electrode pad includes one or both of N electrode pad and P electrode pad, the electrode
Pad includes one of gold solder disk, aluminum pad, silver soldering disk and copper pad or combination.
Preferably, the light emitting diode further includes ball structure, and the ball structure is welded on the electrode pad.
The present invention also provides a kind of light emitting diodes, comprising: epitaxial light emission structure；Electrode pad is formed in described shine
It is electrically connected on epitaxial structure and with the epitaxial light emission structure；Passivation layer is covered in the epitaxial light emission structure surface；Soldered ball
Structure is welded on the electrode pad；And protective layer, it is coated on the ball structure and the electrode pad side wall.
Preferably, the protective layer includes one or both of inorganic medium protective layer and flexible material protective layer.
Preferably, the tensile strength of the flexible material side wall protective layer is not less than 50Mpa；Maximum operating temperature is not less than
260 DEG C of Reflow Soldering temperature；Water absorption rate is not more than 0.5%.
Preferably, the flexible material protective layer includes flexible polymer Parylene layer, thermoset polyimide layer, polyphenyl
And one of oxazole layer, polyphenylene sulfide ether layer and layer of silica gel or combination.
Preferably, the inorganic medium protective layer includes SiO2Layer, SiN layer, SiON layers, Al2O3Layer, TiO2One in layer
Kind.
Preferably, the electrode pad includes one or both of N electrode pad and P electrode pad, the electrode
Pad includes one of gold solder disk, aluminum pad, silver soldering disk and copper pad.
As described above, the light emitting diode of the utility model, has the advantages that
1) the utility model is by being arranged flexible material side wall protective layer in electrode pad side wall, during soldered ball, electricity
Pole pad edge is avoided the problems such as cracking by flexible material side wall protective layer buffer protection, can effectively completely cut off air and water
Vapour can effectively promote the reliability of LED chip；
2) the utility model can be risen during soldered ball by the way that flexible material side wall protective layer is arranged in electrode pad side wall
To certain buffer function, and then increase the adhesion strength of pad and bottom, be conducive to chip in later period pour mask, encapsulation, transported
Stability in journey.
3) the utility model not no complexity of additional process substantially；And it is heavy compared to traditional inorganic dielectric material
For product equipment, the cost of the depositing device of flexible material is lower, can effectively reduce the cost of passivation layer deposition.
Detailed description of the invention
Fig. 1 a and Fig. 1 b are shown as the light emitting diode in the prior art structure that passivation layer cracks during soldered ball and show
It is intended to.
Fig. 2 is shown as the structural schematic diagram of the light emitting diode of the utility model embodiment 1.
Fig. 3 is shown as the structural schematic diagram of the light emitting diode of the utility model embodiment 2.
Fig. 4 is shown as the structural schematic diagram of the light emitting diode of the utility model embodiment 3.
Fig. 5 is shown as the structural schematic diagram of the light emitting diode of the utility model embodiment 4.
Component label instructions
201 epitaxial light emission structures
202 electrode pads
203 flexible material side wall protective layers
204 flexible material surface passivation layers
205 ball structures
206 inorganic medium protective layers
207 inorganic medium surface passivation layers
208 passivation layers
209 protective layers
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 2~Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in diagram then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 2, the utility model provides a kind of light emitting diode, the light emitting diode includes: luminous epitaxy junction
Structure 201, electrode pad 202, flexible material side wall protective layer 203 and ball structure 205.
It is partly led as shown in Fig. 2, the epitaxial light emission structure 201 may include n type semiconductor layer, quantum well layer and p-type
Body layer, electronic barrier layer etc., wherein the n type semiconductor layer can be N-type GaN layer, and the quantum well layer can be GaN base
Quantum well layer, the p type semiconductor layer can be p-type GaN layer.It is of course also possible to select other types according to actual demand
Epitaxial light emission structure 201, however it is not limited to example recited herein.
As shown in Fig. 2, the electrode pad 202 be formed on the epitaxial light emission structure 201 and with the luminous extension
Structure 201 is electrically connected.The electrode pad 202 includes one of N electrode pad 202 and P electrode pad 202 or two
Kind, the N electrode pad 202 is contacted with the N-type layer of the epitaxial light emission structure 201, the P electrode pad 202 and the hair
The P-type layer of light epitaxial structure 201 contacts.The electrode pad 202 includes in gold solder disk, aluminum pad, silver soldering disk and copper pad
One kind, pad made of these materials have good conductive property, and can effectively reduce contact resistance, still, in steam, contain Cl
It is easily etched under the environment such as the salinity of ion.
As shown in Fig. 2, the flexible material side wall protective layer 203 is coated on the side wall of the electrode pad 202.
As an example, the tensile strength of the flexible material side wall protective layer 203 is not less than 50Mpa, maximum operating temperature
Not less than 260 DEG C of Reflow Soldering temperature, water absorption rate is not more than 0.5%, to meet the work requirements of light emitting diode, improves luminous two
Mechanical performance, waterproof performance and the high temperature resistance of pole pipe.The flexible material side wall protective layer 203 includes Parylene layer
(Parylene-N/C/D/HT), thermoset polyimide layer PI (polyimide), polybenzoxazoles layer PBO
(polybenzoxazole), in polyphenylene sulfide ether layer PS (Polyphenylene sulfide) and layer of silica gel (silica gel)
One kind combines, flexible material side wall protective layer 203 made of these materials, flexible and toughness with higher, and is easy
Molding, under thermal stress or mechanical stress, it is not easy to 202 peeling off phenomenon of electrode pad, with the electrode pad
202 bond strengths with higher can effectively protect the electrode pad 202 not by steam or other ion erosions, Yi Xiechang
The tensile strength for the flexible material seen, the flexibility material as shown in table 1 below using the data of temperature, water absorption rate and translucency
The type of material can be selected according to different actual demands, however it is not limited to example recited herein.
Table 1
As shown in Fig. 2, the light emitting diode further includes flexible material surface passivation layer 204, the flexible material surface
Passivation layer 204 is covered in 201 surface of epitaxial light emission structure, to be passivated 201 surface of epitaxial light emission structure.The flexibility
Material surface passivation layer 204 and the flexible material side wall protective layer 203 are integrally formed.The i.e. described flexible material surface passivation layer
204 are formed with the flexible material side wall protective layer 203 by same primary depositing.
As an example, the thickness range of the flexible material surface passivation layer 204 is between 50~500nm.In this reality
It applies in example, the thickness of the flexible material surface passivation layer 204 meets formula d=(2k-1) λ/4n, and wherein d is the flexible material
Expect that the thickness of surface passivation layer 204, k are positive integer, λ is the emission wavelength of the epitaxial light emission structure 201, and n is the flexibility
The refractive index of material surface passivation layer 204.For example, as used Parylene, it is described to send Rayleigh with Parylene C
(Parylene-C) for, refractive index 1.6, for central wavelength be 450nm blue-ray LED for, preferably with a thickness of
70nm。
As shown in Fig. 2, the ball structure 205 is welded on the electrode pad 202.The utility model passes through in electrode
Flexible material side wall protective layer 203 is arranged in 202 side wall of pad, and during soldered ball, 202 edge of electrode pad is by flexible material side
203 buffer protection of wall protective layer, avoids the problems such as cracking, and can effectively completely cut off air, and can effectively promote LED chip can
By property.
In the present embodiment, the flexible material surface passivation layer 204 and the flexible material side wall protective layer 203 are made
Method the flexible material surface passivation layer 204 and institute can be deposited using the modes such as spin coating, vacuum vapor deposition (CVD)
It states flexible material side wall protective layer 203 and then deposits one layer of SiO on it2Then protective layer makes 202nd area of electrode pad
The light shield in domain, exposed portion SiO2Protective layer etches away the part SiO exposed above electrode pad 202 using BOE2Layer, then lead to
The flexible material material for crossing 202 top of ICP etching removal electrode pad, then removes photoresist glue and SiO2Protective layer part, with
The light emitting diode construction being passivated by flexible material layer is formed, as shown in Figure 2.
Embodiment 2
As shown in figure 3, the present embodiment provides a kind of light emitting diode construction, basic structure such as embodiment 1, wherein with
Embodiment 1 the difference is that, the light emitting diode further includes inorganic medium protective layer 206, inorganic medium protection
Layer 206 is covered in the flexible material side wall protective layer 203 and 204 surface of flexible material surface passivation layer.It is described inorganic
Medium protective layer 206 can be SiO2Layer, SiN layer, SiON layers, Al2O3Layer, TiO2One of layer or combination, further to protect
Protect the epitaxial light emission structure 201 and the electrode pad 202.
Embodiment 3
As shown in figure 4, the present embodiment provides a kind of light emitting diode construction, basic structure such as embodiment 1, wherein with
Embodiment 1 the difference is that, the flexible material surface passivation layer 204 of the light emitting diode is replaced with into inorganic Jie
Matter surface passivation layer 207 is covered in 201 surface of epitaxial light emission structure, to be passivated 201 surface of epitaxial light emission structure.
The inorganic medium surface passivation layer 207 includes SiO2Layer, SiN layer, SiON layers, Al2O3Layer, TiO2One of layer or combination.
The flexible material side wall protective layer 203 can be flexible polymer Parylene layer, thermoset polyimide layer, polybenzoxazoles
One of layer, polyphenylene sulfide ether layer, layer of silica gel or the medium oxidizing graphene layer of flexible inorganic, carbon nanotube layer or combination.
Embodiment 4
As shown in figure 5, the present embodiment provides a kind of light emitting diodes, comprising: epitaxial light emission structure 201, electrode pad
202, passivation layer 208, ball structure 205 and protective layer 209.
It is partly led as shown in figure 5, the epitaxial light emission structure 201 may include n type semiconductor layer, quantum well layer and p-type
Body layer, electronic barrier layer etc., wherein the n type semiconductor layer can be N-type GaN layer, and the quantum well layer can be GaN base
Quantum well layer, the p type semiconductor layer can be p-type GaN layer.It is of course also possible to select other types according to actual demand
Epitaxial light emission structure 201, however it is not limited to example recited herein.
As shown in figure 5, the electrode pad 202 be formed on the epitaxial light emission structure 201 and with the luminous extension
Structure 201 is electrically connected.The electrode pad 202 includes one of N electrode pad 202 and P electrode pad 202 or two
Kind, the N electrode pad 202 is contacted with the N-type layer of the epitaxial light emission structure 201, the P electrode pad 202 and the hair
The P-type layer of light epitaxial structure 201 contacts.The electrode pad 202 includes in gold solder disk, aluminum pad, silver soldering disk and copper pad
One kind, pad made of these materials have good conductive property, and can effectively reduce contact resistance, still, in steam, contain Cl
It is easily etched under the environment such as the salinity of ion.
The passivation layer 208 is covered in 201 surface of epitaxial light emission structure.In the present embodiment, the passivation layer 208
For inorganic dielectric material passivation layer.The ball structure 205 is welded on the electrode pad 202, in the ball structure 205
During welding, positioned at the passivation layer 208 of 202 side wall of electrode pad, there may be cracking phenomenas, such as Fig. 5 institute
Show.
The protective layer 209 is coated on 202 side wall of the ball structure 205 and the electrode pad, the protective layer 209
It can be packed into the fracture area of 202 side wall of electrode pad and the passivation layer 208, further to protect the electrode pad
202 by the erosion of steam or other ions.
As an example, the protective layer 209 includes one in inorganic medium protective layer 206 and flexible material protective layer
Kind.Wherein, the tensile strength of the flexible material side wall protective layer 203 is not less than 50Mpa, and maximum operating temperature is not less than 260
DEG C, water absorption rate is not more than 0.5%, to meet the work requirements of light emitting diode, improves mechanical performance, the waterproof of light emitting diode
Performance and high temperature resistance.The flexible material protective layer includes flexible material Parylene layer, thermoset polyimide layer, gathers
One of benzoxazoles layer, polyphenylene sulfide ether layer and layer of silica gel.The inorganic medium protective layer 206 includes SiO2Layer, SiN layer,
SiON layers, Al2O3Layer and TiO2One of layer or combination.
As described above, the light emitting diode of the utility model, has the advantages that
1) the utility model is by being arranged flexible material side wall protective layer in electrode pad side wall, during soldered ball, electricity
Pole pad edge is avoided the problems such as cracking by flexible material side wall protective layer buffer protection, can effectively completely cut off air and water
Vapour can effectively promote the reliability of LED chip；
2) the utility model can be risen during soldered ball by the way that flexible material side wall protective layer is arranged in electrode pad side wall
To certain buffer function, and then increase the adhesion strength of pad and bottom, be conducive to chip in later period pour mask, encapsulation, transported
Stability in journey.
3) the utility model not no complexity of additional process substantially；And it is heavy compared to traditional inorganic dielectric material
For product equipment, the cost of the depositing device of flexible material is lower, can effectively reduce the cost of passivation layer deposition.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (9)
1. a kind of light emitting diode characterized by comprising
Epitaxial light emission structure；
Electrode pad is formed on the epitaxial light emission structure and is electrically connected with the epitaxial light emission structure；
Passivation layer is covered in the epitaxial light emission structure surface；
Ball structure is welded on the electrode pad；And
Protective layer is coated on the ball structure and the electrode pad side wall.
2. light emitting diode according to claim 1, it is characterised in that: the protective layer include inorganic medium protective layer with
And one or both of flexible material protective layer.
3. light emitting diode according to claim 2, it is characterised in that: the stretching of the flexible material side wall protective layer is strong
Degree is not less than 50Mpa.
4. light emitting diode according to claim 2, it is characterised in that: the most senior engineer of the flexible material side wall protective layer
Make temperature not less than 260 DEG C of Reflow Soldering temperature.
5. light emitting diode according to claim 2, it is characterised in that: the water absorption rate of the flexible material side wall protective layer
No more than 0.5%.
6. light emitting diode according to claim 2, it is characterised in that: the flexible material protective layer includes flexible polymer
One of object Parylene layer, thermoset polyimide layer, polybenzoxazoles layer, polyphenylene sulfide ether layer and layer of silica gel.
7. light emitting diode according to claim 2, it is characterised in that: the flexible material surface passivation layer with it is described soft
Property material side wall protective layer be integrally formed.
8. light emitting diode according to claim 2, it is characterised in that: the thickness model of the flexible material surface passivation layer
It encloses between 50~500nm.
9. light emitting diode according to claim 2, it is characterised in that: the thickness of the flexible material surface passivation layer is full
Sufficient formula d=(2k-1) λ/4n, wherein d is the thickness of the flexible material surface passivation layer, and k is positive integer, and λ is described shines
The emission wavelength of epitaxial structure, n are the refractive index of the flexible material surface passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820332254.7U CN208208785U (en) | 2018-03-09 | 2018-03-09 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820332254.7U CN208208785U (en) | 2018-03-09 | 2018-03-09 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208208785U true CN208208785U (en) | 2018-12-07 |
Family
ID=64527552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820332254.7U Active CN208208785U (en) | 2018-03-09 | 2018-03-09 | Light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020199746A1 (en) * | 2019-04-03 | 2020-10-08 | 厦门市三安光电科技有限公司 | Semiconductor light-emitting device |
| CN110677789B (en) * | 2019-09-29 | 2023-12-01 | 歌尔股份有限公司 | Composite vibrating plate and loudspeaker using same |
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2018
- 2018-03-09 CN CN201820332254.7U patent/CN208208785U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020199746A1 (en) * | 2019-04-03 | 2020-10-08 | 厦门市三安光电科技有限公司 | Semiconductor light-emitting device |
| CN110677789B (en) * | 2019-09-29 | 2023-12-01 | 歌尔股份有限公司 | Composite vibrating plate and loudspeaker using same |
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Effective date of registration: 20231104 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |