CN104576628A - Novel white light LED structure and manufacturing method thereof - Google Patents
Novel white light LED structure and manufacturing method thereof Download PDFInfo
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- CN104576628A CN104576628A CN201310507360.6A CN201310507360A CN104576628A CN 104576628 A CN104576628 A CN 104576628A CN 201310507360 A CN201310507360 A CN 201310507360A CN 104576628 A CN104576628 A CN 104576628A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000010405 anode material Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 239000010406 cathode material Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003353 gold alloy Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a novel white light LED (Light Emitting Diode) structure which comprises a blue light LED chip and a reddish yellow light LED chip, wherein the blue light LED chip and the reddish yellow light LED chip are adhered through glue. The novel white light LED structure is characterized in that the blue light LED chip comprises a substrate, and a buffer layer, a DBR layer, an n-type semiconductor material layer, a luminous layer, an electron blocking layer, a p-type semiconductor material layer and a transparent electrode layer, which are sequentially grown on the substrate; the reddish yellow light LED chip comprises a substrate, and an n-type semiconductor material layer, a luminous layer, a p-type semiconductor material layer and a transparent electrode layer, which are sequentially grown on the substrate, and a reflecting layer is arranged on the transparent electrode layer. Meanwhile, the invention further discloses a manufacturing method for the white light LED structure. According to the white light LED structure and the manufacturing method thereof, white light is emitted by performing direct spectrum superimposition on blue light emitted by the blue light LED chip and reddish yellow light emitted by the reddish yellow light LED chip; compared with a conventional white light LED chip, the white light LED structure has the advantages that fluorescent powder is not required, good luminous effects are achieved, the energy conversion efficiency of the LED structure is improved, and the service life of the LED structure is prolonged.
Description
Technical field
The present invention relates to LED chip technical field, especially a kind of novel white-light LED structure and preparation method thereof.
Background technology
Light-emitting diode (light emitting diodle is called for short LED) is divided into inorganic LED(to be commonly referred to as LED according to the chemical constitution of different luminescent material and attribute) and organic LED (being commonly referred to as OLEDs).In 1993, blue gallium nitride (GaN) LED technology obtained and breaks through, and within 1996, achieves inorganic LED white light emission on this basis.Because white light LEDs has low voltage drive, all solid state, low-power consumption, the long-acting advantage such as reliably, white light LED part all receives great attention that is academic and industrial circle in the application study of illumination association area.Because white light LEDs is a kind of high efficiency light source meeting environmental protection and energy saving green illumination theory, therefore, semiconductor illumination technique (forth generation lighting technology) at present based on white light LEDs obtains promotion energetically and development in worldwide, is forming huge industry.The mode that white light LED part realizes white light mainly contains three kinds: 1, blue-light LED chip excites yellow fluorescent powder, obtains white light by compound; 2, ultraviolet LED excites red, green, blue three primary colors fluorescent powder, obtains white light by compound; 3, red, green, blue three-primary color LED multi-chip obtains white light by integration packaging.
The second white light makes need select red bluish-green three kinds of fluorescent material of matching with ultraviolet wavelength, UV light source, uv-resistant encapsulating material, and the making of these three kinds of materials and exploitation all more difficult, therefore the second white light is also less on the market.The third white light manufacture method is faced with mixed light difficulty, and user can observe multiple different color everywhere easily in this light source front, and the driving of three kinds of light is more complicated simultaneously, and under different electric currents, occurred the change of color, the third is also less in market.Modal is at present the first, namely just applies one deck yellow fluorescent powder to realize the transmitting of white light in face at blue-light LED chip, and adopt the fluorescent material paint-on technique that the method realizes, not only production efficiency is not high, and the product colour temperature difference of same batch is large.Obtain in processing procedure follow-up, white light LEDs is fixed on cup centre and carries out die bond process, LED wafer in the process of die bond due to the problem of equipment precision, can not ensure that wafer is bonded at the middle of cup, for the mixed layer being coated with fluorescent material, because chip is not in centre, cause the optical path difference on both sides different thus colorific inhomogeneities.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of novel white-light LED structure and preparation method thereof, white light LEDs can be realized when unstressed configuration powder, effectively to improve chip light emitting efficiency and to extend white light LEDs useful life.
Technical scheme of the present invention is: a kind of novel white-light LED structure, comprise the blue-light LED chip by glue bond and reddish yellow light LED chip, described blue chip comprises substrate, the resilient coating that substrate grows successively, DBR layer, n-type semiconductor layer, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer;
In described blue chip, p-type semiconductor material layer is provided with anode, and n-type semiconductor layer is provided with negative electrode, and cathode and anode is equipped with bonding wire, cathode and anode material be in Ti, Ni, Au, Ag, Pt, Cr and Wu one or more, bonding wire material is one or more in Cu, Al and Ag;
Described DBR layer is made up of 2-15 cycle material layer, each cycle material layer is made up of the bi-material layer in AlGaN, InGaN and GaN, the thickness of each material layer is 1/4,1/8 or 1/16 of blue light wavelength divided by the refractive index of material, and the DBR layer in blue chip has makes blue light down not launch and ruddiness can appear and from the effect of top-emission.
Described reddish yellow optical chip comprises substrate, the n-type semiconductor layer that substrate grows successively, luminescent layer, p-type semiconductor material layer and transparent electrode layer; Transparent electrode layer is provided with reflector, and reflector is metallic reflector and/or dbr structure, and dbr structure material is two kinds in AlGaN, InGaN and GaN, and the luminous energy that reddish yellow optical chip is launched to be penetrated back and from top-emission by this reflector being positioned at bottom;
In described reddish yellow optical chip, p-type semiconductor material layer is provided with anode, n-type semiconductor layer is provided with negative electrode, cathode and anode is equipped with bonding wire, cathode and anode material be in Ti, Ni, Au, Ag, Pt, Cr and Wu one or more, bonding wire material is one or more in Cu, Al and Ag;
The size of described reddish yellow optical chip is more than or equal to the size of blue chip, be combined together by gluing, and realize the transmitting of white light, the material of glue can be in organic silica gel, silver slurry, heat-conducting glue, gold alloy solder one or more, the thickness of glue is preferably 100nm-100 um, to reduce the absorption of reddish yellow light.
Preferably, the substrate in blue chip and reddish yellow optical chip is initial substrates, organic semiconductor device or surface coarsening substrate.
The cathode and anode of described reddish yellow optical chip and blue chip lays respectively at the arranged on left and right sides of whole chip structure, to decrease the absorption of electrode pair light.
Preferably, described blue chip includes Sapphire Substrate, GaN resilient coating, DBR layer, n-type GaN layer, the luminescent layer be made up of InGaN and GaN material layer, AlGaN electronic barrier layer, p-type GaN layer and ito transparent electrode layer; Described reddish yellow optical chip includes GaP substrate, N-shaped AlInGaN layer, emission wavelength are the Al of 560-600nm
xin
yga
zp luminescent layer, p-type AlInGaN layer, ito transparent electrode layer and reflector, wherein Al
xin
yga
zin P luminescent layer, the molar fraction being preferably x and y is 0.25-0.5, x=y, z=1-x-y, and luminescent layer is by changing the color of the adjustable light of size of x, y and z.
A manufacture method for novel white-light LED structure, blue chip and reddish yellow optical chip all adopt MOCVD (Metal-
Organic Chemical Vapor Deposition) fabrication techniques, comprise following two steps:
1, be that blue chip and reddish yellow optical chip are pasted by the glue of 100nm-100 um by thickness, the negative electrode of blue chip and the negative electrode of reddish yellow optical chip are positioned at homonymy or heteropleural;
2, on the basis of above-mentioned bonding chip, directly package lead is carried out.
The lead-in wire of described blue chip and reddish yellow optical chip is series connection or parallel connection.
Beneficial effect of the present invention is: the substrate of blue chip is linked together by the substrate of glue and reddish yellow optical chip, DBR layer is established in blue chip, DBR layer is between the active region and buffering area of blue chip, the blue light mailing to bottom is all reflected back and reddish yellow light can appear, reflector is established bottom reddish yellow optical chip, the reddish yellow light mailing to bottom is all reflected and from top injection, the direct superposition of two kinds of spectrum simultaneously just can send white light.The present invention is compared with existing White-light LED chip, and without the need to fluorescent material, illumination effect is good, improves LED energy conversion efficiency and extends useful life.
Accompanying drawing explanation
Fig. 1 is the generalized section of the embodiment of the present invention 1;
Fig. 2 is the front schematic view of the embodiment of the present invention 1;
Fig. 3 is the schematic bottom view of the embodiment of the present invention 1;
Fig. 4 is the generalized section of the embodiment of the present invention 2;
Fig. 5 is the front schematic view of the embodiment of the present invention 2;
Fig. 6 is the schematic bottom view of the embodiment of the present invention 2.
In figure, 1-glue, 2-Sapphire Substrate, 3-resilient coating, 4-DBR layer, 5-n type GaN layer, 6-luminescent layer (blue light), 7-electronic barrier layer, 8-p type GaN layer, 9-transparent electrode layer, 10-anode (blue light), 11-GaP substrate, 12-n type AlInGaN layer, 13-luminescent layer (reddish yellow light), 14-p-type AlInGaN layer, 15-transparent electrode layer, 16-anode (reddish yellow light), 17-negative electrode (blue light), 18-negative electrode (reddish yellow light), 19-reflector.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further:
embodiment 1: as Figure 1-3, a kind of novel white-light LED structure, comprise the blue-light LED chip and reddish yellow light LED chip that bond with heat-conducting glue (1), wherein, blue chip includes Sapphire Substrate (2), the GaN resilient coating (3) that Sapphire Substrate (2) sets gradually, the DBR layer (4) be made up of AlGaN and GaN material layer, n-type GaN layer (5), the luminescent layer (6) be made up of 2 cycle material layers, AlGaN electronic barrier layer (7), p-type GaN layer (8) and ito transparent electrode layer (9), wherein p-type GaN layer (8) is provided with anode (10), n-type GaN layer (5) is provided with negative electrode (17), cloudy, anode is equipped with bonding wire, cloudy, anode material is Ag, bonding wire material is Cu,
N-shaped AlInGaN layer (12), Al that reddish yellow optical chip includes GaP substrate (11), sets gradually on GaP substrate (11)
0.3in
0.3ga
0.4p luminescent layer (13), p-type AlInGaN layer (14), ito transparent electrode layer (15) and metallic reflector (19), wherein p-type AlInGaN layer (14) is provided with anode (16), N-shaped AlInGaN layer (12) is provided with negative electrode (18), cathode and anode is equipped with bonding wire, cathode and anode material is Ag, and bonding wire material is Cu;
In the present embodiment, the size of reddish yellow optical chip equals the size of blue chip, and reddish yellow optical chip negative electrode (18) and blue chip negative electrode (17) are positioned at homonymy.
The manufacture method of embodiment 1 is, MOCVD technology is adopted to make corresponding blue chip and reddish yellow optical chip, with the heat-conducting glue (1) that thickness is 200 nm, blue chip and reddish yellow optical chip are pasted again, different stickup directions can make the negative electrode of blue chip (17) be positioned at homonymy or heteropleural with the negative electrode (18) of reddish yellow optical chip, in this embodiment, be then homonymy, then on the basis of above-mentioned bonding chip, directly carry out package lead, just define the chip structure in embodiment 1.
embodiment 2: as Figure 4-Figure 6, a kind of novel white-light LED structure, comprise the blue-light LED chip and reddish yellow light LED chip that bond with organic silica gel (1), wherein, blue chip includes Sapphire Substrate (2), the GaN resilient coating (3) that Sapphire Substrate (2) sets gradually, the DBR layer (4) be made up of AlGaN and GaN material layer, n-type GaN layer (5), the luminescent layer (6) be made up of 12 cycle material layers, AlGaN electronic barrier layer (7), p-type GaN layer (8) and ito transparent electrode layer (9), wherein P type GaN layer (8) is provided with anode (10), n-type GaN layer (5) is provided with negative electrode (17), cloudy, anode is equipped with bonding wire, cloudy, anode material is Ag, bonding wire material is Cu,
N-shaped AlInGaN layer (12), Al that reddish yellow optical chip includes GaP substrate (11), sets gradually on GaP substrate (11)
0.4in
0.4ga
0.2p luminescent layer (13), p-type AlInGaN layer (14), ito transparent electrode layer (15) and metallic reflector (19), wherein p-type AlInGaN layer (14) is provided with anode (16), N-shaped AlInGaN layer (12) is provided with negative electrode (18), cathode and anode is equipped with bonding wire, cathode and anode material is Ag, bonding wire material is Cu, in the present embodiment, GaP substrate (11) right side is partly peeled off, the negative electrode of reddish yellow optical chip (18) is arranged upward, conveniently goes between with the negative electrode (17) in blue chip;
In the present embodiment, the size of reddish yellow optical chip is greater than the size of blue chip, reddish yellow optical chip has more the luminous energy that part launches and without inner directly transmitting of blue chip, and improve light extraction efficiency, reddish yellow optical chip negative electrode (18) and blue chip negative electrode (17) are positioned at homonymy.
The manufacture method of embodiment 2 is: adopt MOCVD technology to make corresponding blue chip and reddish yellow optical chip, with the organic silica gel (1) that thickness is 2000nm, blue chip and reddish yellow optical chip are pasted again, pasting direction by adjustment makes blue chip negative electrode (17) and reddish yellow optical chip negative electrode (18) be positioned at homonymy, directly carry out package lead on this basis, just define the chip structure in embodiment 2.
Claims (10)
1. a novel white-light LED structure, comprise the blue-light LED chip by glue bond and reddish yellow light LED chip, it is characterized in that: described blue chip comprises substrate, the resilient coating that substrate grows successively, DBR layer, n-type semiconductor layer, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer; Described reddish yellow optical chip comprises substrate, the n-type semiconductor layer that substrate grows successively, luminescent layer, p-type semiconductor material layer and transparent electrode layer, and transparent electrode layer is provided with reflector.
2. novel white-light LED structure according to claim 1, is characterized in that: described blue chip includes Sapphire Substrate, GaN resilient coating, DBR layer, n-type GaN layer, the luminescent layer be made up of InGaN and GaN material layer, AlGaN electronic barrier layer, p-type GaN layer and ito transparent electrode layer.
3. novel white-light LED structure according to claim 1, is characterized in that: described reddish yellow optical chip includes GaP substrate, N-shaped AlInGaN layer, emission wavelength are the Al of 560-600nm
xin
yga
zp luminescent layer, p-type AlInGaN layer, ito transparent electrode layer and reflector, wherein in AlxInyGazP luminescent layer, the molar fraction of x and y is 0.25-0.5, x=y, z=1-x-y.
4. novel white-light LED structure according to claim 1, is characterized in that: the size of described reddish yellow optical chip is more than or equal to the size of blue chip.
5. the novel white-light LED structure according to claim 1 or 3, it is characterized in that: described DBR layer is made up of 2-15 cycle material layer, each cycle material layer is made up of the bi-material layer in AlGaN, InGaN and GaN, and the thickness of each material layer is 1/4,1/8 or 1/16 of blue light wavelength divided by the refractive index of material.
6. novel white-light LED structure according to claim 1, is characterized in that: described reflector is metallic reflector and/or dbr structure, and dbr structure material is two kinds in AlGaN, InGaN and GaN.
7. novel white-light LED structure according to claim 1, is characterized in that: the material of described glue is one or more in organic silica gel, silver slurry, heat-conducting glue, gold alloy solder, and the thickness of glue is 100nm-100 um.
8. novel white-light LED structure according to claim 1 and 2, it is characterized in that: in described blue chip, p-type semiconductor material layer is provided with anode, n-type semiconductor layer is provided with negative electrode, cathode and anode be equipped with that bonding wire cathode and anode material is in Ti, Ni, Au, Ag, Pt, Cr and Wu one or more, bonding wire material is one or more in Cu, Al and Ag.
9. the novel white-light LED structure according to claim 1 or 3, it is characterized in that: in described reddish yellow optical chip, p-type semiconductor material layer is provided with anode, n-type semiconductor layer is provided with negative electrode, cathode and anode is equipped with bonding wire, cathode and anode material be in Ti, Ni, Au, Ag, Pt, Cr and Wu one or more, bonding wire material is one or more in Cu, Al and Ag.
10. a manufacture method for novel white-light LED structure, blue chip and reddish yellow optical chip all adopt MOCVD fabrication techniques, it is characterized in that: comprise following two steps:
(1) be that blue chip and reddish yellow optical chip are pasted by the glue of 100nm-100 um by thickness, the negative electrode of blue chip and the negative electrode of reddish yellow optical chip are positioned at homonymy or heteropleural;
(2) on the basis of above-mentioned bonding chip, directly package lead is carried out.
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| CN201310507360.6A CN104576628B (en) | 2013-10-25 | 2013-10-25 | A kind of novel white-light LED structure and preparation method thereof |
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| CN104576628A true CN104576628A (en) | 2015-04-29 |
| CN104576628B CN104576628B (en) | 2018-04-06 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950792A (en) * | 2019-03-29 | 2019-06-28 | 钟祥博谦信息科技有限公司 | The distributed bragg reflector mirror of gallium nitride and the preparation method of resonant cavity |
| CN111834505A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Wavelength down conversion based triode device and manufacturing method thereof |
| GB2592017B (en) * | 2020-02-11 | 2022-08-03 | Plessey Semiconductors Ltd | Multicolour light emitting structure |
| WO2023273096A1 (en) * | 2021-07-01 | 2023-01-05 | 河源市众拓光电科技有限公司 | Visible light communication cascaded array led chip |
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| CN101740559A (en) * | 2009-12-18 | 2010-06-16 | 北京工业大学 | White-light emitting diode |
| CN102171847A (en) * | 2008-10-03 | 2011-08-31 | 港大科桥有限公司 | Semiconductor color-tunable broadband light sources and full-color microdisplays |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
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2013
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| WO2007018390A1 (en) * | 2005-08-10 | 2007-02-15 | Seoul Opto-Device Co., Ltd. | Light emitting device and method of manufacturing the same |
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| CN109950792A (en) * | 2019-03-29 | 2019-06-28 | 钟祥博谦信息科技有限公司 | The distributed bragg reflector mirror of gallium nitride and the preparation method of resonant cavity |
| GB2592017B (en) * | 2020-02-11 | 2022-08-03 | Plessey Semiconductors Ltd | Multicolour light emitting structure |
| CN111834505A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Wavelength down conversion based triode device and manufacturing method thereof |
| CN111834505B (en) * | 2020-06-12 | 2022-04-08 | 福州大学 | Three-pole luminous tube based on wavelength down-conversion and manufacturing method thereof |
| WO2023273096A1 (en) * | 2021-07-01 | 2023-01-05 | 河源市众拓光电科技有限公司 | Visible light communication cascaded array led chip |
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| CN104576628B (en) | 2018-04-06 |
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