CN202712260U - Plane structure white light led chip - Google Patents
Plane structure white light led chip Download PDFInfo
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- CN202712260U CN202712260U CN 201220226500 CN201220226500U CN202712260U CN 202712260 U CN202712260 U CN 202712260U CN 201220226500 CN201220226500 CN 201220226500 CN 201220226500 U CN201220226500 U CN 201220226500U CN 202712260 U CN202712260 U CN 202712260U
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- led chip
- electrode
- light led
- planar structure
- epitaxial loayer
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Abstract
The utility model discloses a plane structure white light LED chip. The plane structure white light LED chip comprises a non-conducting substrate which is provided with a first surface and a second surface, an epitaxial layer which is arranged on the first surface of the substrate, a fluorescent powder mixing layer which is arranged on the epitaxial layer, a first electrode, a second electrode and electrode metal balls. The first electrode and the second electrode are arranged on the epitaxial layer and are connected with the epitaxial layer. The first electrode and the second electrode are used for applying voltage to the epitaxial layer. Electrode metal balls are located on the first electrode and the second electrode in the fluorescent powder mixing layer and are used for leading the current of the first electrode and the second electrode out. According to the utility model, the plane structure white light LED chip with consistent color and temperature is acquired, and white light is emitted at a chip level, thus the production efficiency of white light is greatly improved.
Description
Technical field
The utility model relates to Light-Emitting Diode (LED) manufacturing field, particularly relates to a kind of planar structure White-light LED chip.
Background technology
Light-emitting diode (1ight emitting diode is called for short LED) according to chemical constitution and the attribute of different luminescent materials, is divided into inorganic LED (being commonly referred to as LED) and organic LED (being commonly referred to as OLEDs).1993, blue gallium nitride (GaN) LED technology obtained to break through, and realizes on this basis inorganic LED white light emission in 1996.Because white light LEDs has low voltage drive, all solid state, low-power consumption, the long-acting advantage such as reliable, white light LED part all has been subject to the great attention of academic and industrial circle in the application study of illumination association area.Because white light LEDs is a kind of high efficiency light source that meets environmental protection and energy saving green illumination theory, therefore, at present (the 4th generation lighting technology) obtained promotion and development energetically in worldwide take white light LEDs as main semiconductor lighting technology, forming huge industry.White light LED part realizes that the mode of white light mainly contains three kinds: 1. blue-light LED chip excites yellow fluorescent powder, by the compound white light that obtains; 2. ultraviolet LED excites the red, green, blue three primary colors fluorescent powder, by the compound white light that obtains; 3. thereby red, green, blue three-primary color LED multi-chip obtains white light by integration packaging.Present modal white light LEDs implementation is the look conversion hysteria, namely at blue-light LED chip surface coating one deck yellow fluorescent powder.Gluing process is generally all adopted in the encapsulation of the white light LEDs of present stage, namely apply silica gel and yttrium-aluminium-garnet (Yttrium Aluminum Garnet at single blue-light LED chip, be called for short YAG) be the emission of the mixture realization white light of yellow fluorescent powder, the fluorescent material paint-on technique that adopts the method to realize, not only production efficiency is not high, and same batch product colour temperature difference is large.In follow-up processing procedure, white light LEDs is fixed in the cup centre and carries out the die bond process, the LED wafer in the process of die bond because the problem of equipment precision, can not guarantee that wafer is bonded at the middle of cup, get mixture layer for the silica gel and the fluorescent material that apply same thickness, because chip is in the centre, thereby cause the different colorific inhomogeneities of optical path difference on both sides.
Therefore, how to provide a kind of color temperature distribution uniform White-light LED chip, become the problem that those skilled in the art need to solve.
The utility model content
The purpose of this utility model is, a kind of planar structure White-light LED chip is provided, get the rear of mixture layer and have optical path difference and colorific non-uniformity problem applying silica gel and fluorescent material to solve existing planar structure White-light LED chip, improved the uniformity of color temperature distribution.
For solving the problems of the technologies described above, the utility model provides a kind of planar structure White-light LED chip, comprising:
Substrate, described substrate are non-conductive substrate, and described substrate has first surface and second surface;
Epitaxial loayer, described epitaxial loayer are arranged on the first surface of described substrate;
The fluorescent material mixed layer, described fluorescent material mixed layer is arranged on the described epitaxial loayer;
The first electrode and the second electrode, described the first electrode are arranged on the described epitaxial loayer and with described epitaxial loayer with described the second electrode and link to each other;
At least two electrode metal balls, described electrode metal ball are connected on described the first electrode and the second electrode in the described fluorescent material mixed layer.
Further, the material of described fluorescent material mixed layer comprises fluorescent material and bonding glue.
Further, described fluorescent material is one or more combination in yellow fluorescent powder, green emitting phosphor and the red fluorescence powder.
Further, described bonding glue comprises a kind of or its combination in silicones, modified silicone resin, epoxy resin, denaturation loop epoxy resins and the third rare resin.
Further, the thickness of described fluorescent material mixed layer is 5um～100um.
Further, the size dimension of described fluorescent material mixed layer equals the size dimension of described epitaxial loayer, or greater than the size dimension of described epitaxial loayer and wrap up the sidewall of described epitaxial loayer.
Further, the size dimension of described fluorescent material mixed layer is the suitable size dimension of 24mil*24mil, 20mil*40mil, 35mil*35mil, 38mil*38mil, 40mil*40mil, 45mil*45mil or 60mil*60mil.
Further, the height of described electrode metal ball is 5um～300um.
Further, the material of described electrode metal ball is metal or alloy, and described metal is gold, aluminium, copper, silver, antimony or tin, and described alloy is alusil alloy, aluminium copper, gun-metal, SAC alloy or Al-Si-Cu alloy.
Further, the upper surface of the upper surface of described electrode metal ball and described fluorescent material mixed layer is in the same plane.
Further, described epitaxial loayer comprises the first limiting layer that is cascading from top to bottom, luminous epitaxial loayer and the second limiting layer.
Further, the size dimension of described the second limiting layer is greater than the size dimension of described the first limiting layer and luminescent layer, and described the first electrode is positioned on described the first limiting layer, and described the second electrode is positioned on the second other limiting layer of described the first limiting layer.
Further, described luminous epitaxial loayer is the multiple quantum well active layer that excites ultraviolet light or royal purple light.
Further, the material of described epitaxial loayer comprises gallium nitride-based material, gallium phosphide sill, gallium nitrogen phosphorus sill or Zinc oxide-base material.
Further, described planar structure White-light LED chip also comprises passivation layer, and described passivation layer is arranged between described epitaxial loayer and the described fluorescent material mixed layer.
Further, the material of described passivation layer comprises silicon nitride, silicon dioxide, aluminium nitride or aluminium oxide.
Further, described planar structure White-light LED chip also comprises resilient coating, and described resilient coating is arranged between described substrate and the described epitaxial loayer.
Further, described planar structure White-light LED chip also comprises the reflector, and described reflector is arranged on the second surface of described substrate.
Compared with prior art, the planar structure White-light LED chip that provides of the utility model has the following advantages:
1. in the planar structure White-light LED chip described in the utility model, described fluorescent material mixed layer directly is coated on epitaxial loayer and the electrode that is connected epitaxial loayer, avoided the LED wafer can not guarantee that in the process of die bond wafer is bonded at the optical path difference different problem on the both sides that the middle of cup causes, and then avoid the problem of colorific inhomogeneities, reduce same batch product colour temperature difference, form the consistent white light LEDs of colour temperature.
2. in the planar structure White-light LED chip described in the utility model, by directly with the electrode that is connected epitaxial loayer the fluorescent material mixed layer being set at epitaxial loayer, and be provided with the electrode metal ball to guarantee drawing of electrode current, utilize epitaxial loayer to inspire royal purple light or ultraviolet light, this royal purple light or ultraviolet excitation fluorescent material mixed layer, so that described planar structure White-light LED chip sends white light in chip-scale, greatly improved the production efficiency of white light.
Description of drawings
Fig. 1 is the sectional view of structure of the planar structure White-light LED chip of the utility model one embodiment.
Wherein, 101, substrate; 102, epitaxial loayer; 103, fluorescent material mixed layer; 104, the first electrode; 105, the second electrode; 106, electrode metal ball; 111, reflector; 112, resilient coating; 113, the first limiting layer; 114, luminescent layer; 115, the second limiting layer; 116, passivation layer.
Embodiment
Below in conjunction with schematic diagram planar structure White-light LED chip of the present utility model is described in more detail, wherein represented preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present utility model is, a kind of planar structure White-light LED chip is provided, fluorescent material mixed layer described in this planar structure White-light LED chip directly is coated on epitaxial loayer and the electrode that is connected epitaxial loayer, and be provided with the electrode metal ball to guarantee the energising of electrode and this planar structure White-light LED chip outside, to avoid the LED wafer can not guarantee that in the process of die bond wafer is bonded at the different problem of optical path difference on the both sides that the middle of cup causes, and then avoid the problem of colorific inhomogeneities, reduce same batch product colour temperature difference, form the consistent white light LEDs of colour temperature, and send white light in chip-scale, to improve the production efficiency of white light.
Below please refer to Fig. 1, it is the sectional view of structure of the planar structure White-light LED chip of the utility model one embodiment.
As shown in Figure 1, in the present embodiment, substrate 101 is non-conductive substrate, substrate 101 has first surface and second surface, substrate 101 can be selected from organizing material with next, and this group material comprises: sapphire, silicon wafer, carborundum, aluminium nitride, gallium nitride, magnesium oxide or zinc oxide, in preferred embodiment, substrate 101 is chosen sapphire, because sapphire stability is fine, can be used in the high growth temperature process, and, sapphire mechanical strength is high, is easy to process and clean.Substrate 101 has first surface and second surface.
The first electrode 104 and the second electrode 105 are arranged in the fluorescent material mixed layer 103 on the part epitaxial loayer 102, and link to each other with epitaxial loayer 102, and the first electrode 104 and the second electrode 105 are used for epitaxial loayer 102 is applied voltage.In the present embodiment, owing to being provided with passivation layer 116, passivation layer 116 covers the first electrode 104 and the second electrode 105.Wherein the first electrode 104 links to each other with the second limiting layer 115 in the epitaxial loayer 102, deposited successively by palladium (Pd)/gold (Au) and to form, the second electrode 105 is formed on the upper surface of exposed portions serve of the first limiting layer 113, is deposited successively by titanium (Ti)/aluminium (Al)/molybdenum (Mo)/gold (Au) to form.The first electrode 104 in the present embodiment and the material of the second electrode 105 are not limited to palladium (Pd)/gold (Au) and titanium (Ti)/aluminium (Al)/molybdenum (Mo)/gold (Au), such as titanium (Ti)/platinum (Pt)/gold (Au) etc. also in thought range of the present utility model.In the present embodiment, the first electrode 104 and the second electrode 105 are positioned at the same side of led chip, and the electric current cross-current is crossed the first limiting layer 113 in the epitaxial loayer 102, therefore form the White-light LED chip of planar structure.
Fluorescent material mixed layer 103 is arranged on the epitaxial loayer 102, owing to being provided with passivation layer 116 on the epitaxial loayer 102 in the present embodiment, fluorescent material mixed layer 103 is arranged on the passivation layer 116 and partial coverage electrode metal ball 106.The material of fluorescent material mixed layer 102 comprises fluorescent material and bonding glue, wherein, fluorescent material can be one or more the combination in yellow fluorescent powder, green emitting phosphor and the red fluorescence powder, the adhesive glue glassware for drinking water has certain viscosity and hardness, described bonding glue is silicones, modified silicone resin, epoxy resin, denaturation loop epoxy resins, third rare resin, or comprises at least a kind of hybrid resin in the above-mentioned resin.Better, fluorescent material is that YAG system and barium orthosilicate (Barium ortho-Silicate is called for short BOS) they are fluorescent material.The thickness of fluorescent material mixed layer is 5um～100um, and that better is 10um, 15um, 20um, 30um, 35um, 40um, 50um, 100um.For obtaining the planar structure White-light LED chip of different-colour, the interior adjustment of scope that this fluorescent material is certain with the proportioning of bonding glue, and the height of the thickness of fluorescent material mixed layer 103 and electrode metal ball 106 is suitably adjusted in certain scope, to guarantee drawing of 106 pairs of the first electrodes 104 of electrode metal ball and the second electrode 105 electric currents.The size dimension of fluorescent material mixed layer 103 equals the size of epitaxial loayer 102, or greater than the size of epitaxial loayer 102 in order to form the parcel of sidewall, the size dimension of fluorescent material mixed layer 103 is the suitable size dimension of 24mil*24mil, 20mil*40mil, 35mil*35mil, 38mil*38mil, 40mil*40mil, 45mil*45mil or 60mil*60mil (mil).In the present embodiment, size dimension refer to for the cross-sectional area of horizontal direction.In the present embodiment, fluorescent material mixed layer 103 is 10: 1 silicones and the mixture of yellow fluorescent powder (YAG) for allocation ratio, better, also can select allocation ratio is 10: 1: 0.2 silicones and the mixture of yellow fluorescent powder (YAG) and nitride red fluorescent powder.
In the present embodiment, the process that realizes fluorescent material mixed layer 103 is: allocation ratio is after the mixture of 10: 1 silicones and yellow fluorescent powder (YAG), in vacuum tank, vacuumize, extract the air bubble between silicones and the yellow fluorescent powder mixture out.Utilize gold wire bonder, excite the first electrode 104 of the LED wafer of blue light electrode metal ball 106 of burn-oning at full wafer, the height of electrode metal ball 106 is 35um, and preparation passivation layer 116.The mixture of the fluorescent material that configures and silicones is coated in uniformly the surface of LED wafer, adopts squeegee to make its planarization.Afterwards the LED wafer is placed on that baking 1h is cured on 150 ℃ the drip pan, in cmp (CMP) polishing machine, silicones and fluorescent material mixture after solidifying are carried out rough polishing, reaching the point that carries out chip behind the certain thickness in test machine surveys, the silicones of effects on surface and the coating of fluorescent material are carried out little throwing, after the LED of full wafer wafer colour temperature is basically identical, stop polishing, obtain having certain thickness fluorescent material mixed layer 103.By laser scribing means chip is cut, obtain the planar structure White-light LED chip that single-chip has fluorescent material mixed layer 103.In the utility model, the curing of the mixture of silicones and fluorescent material both can be to solidify at drip pan, also can be to solidify in baking oven.Coated silicones and fluorescent material are coated in the planarization afterwards of LED crystal column surface, can make its planarization with squeegee, also can utilize its deadweight to make its flattening surface.Silicones after the curing or epoxy resin can be used for mechanical polishing.Because prepared passivation layer 116 at epitaxial loayer 102, so there is not electrode in passivation layer 116, can directly carry out coating, curing and the polishing of the mixture of silicones and fluorescent material at passivation layer 116, and by chip testing accurately being controlled the colour temperature of led chip.
In the present embodiment, epitaxial loayer 102 is inspired royal purple light or ultraviolet light in this planar structure White-light LED chip, this royal purple light or ultraviolet excitation fluorescent material mixed layer 103 directly send white light in chip-scale, form the consistent white light LEDs of colour temperature, have greatly improved the production efficiency of white light.
The utility model embodiment is based on conventional planar structure white light LED chip, the fluorescent material mixed layer directly is coated on epitaxial loayer and the electrode that is connected epitaxial loayer, and be provided with the electrode metal ball to guarantee drawing of electrode current, utilize epitaxial loayer to inspire royal purple light or ultraviolet light, this royal purple light or ultraviolet excitation fluorescent material mixed layer are so that described planar structure White-light LED chip sends white light in chip-scale.It should be noted, the utility model is not limited to above-described embodiment, and other utilizes fluorescent material mixed layer and electrode metal ball, realizes that planar structure White-light LED chip at the chip-scale ejecting white light is also within thought range of the present utility model.
In sum, planar structure White-light LED chip described in the utility model, compared with prior art, the planar structure White-light LED chip that the utility model provides has the following advantages:
1. in the planar structure White-light LED chip described in the utility model, described fluorescent material mixed layer directly is coated on epitaxial loayer and the electrode that is connected epitaxial loayer, avoided the LED wafer can not guarantee that in the process of die bond wafer is bonded at the middle of cup, the different problem of the optical path difference on the both sides that cause, thereby and then avoid the problem of colorific inhomogeneities, reduce same batch product colour temperature difference, form the consistent white light LEDs of colour temperature;
2. in the planar structure White-light LED chip described in the utility model, by directly with the electrode that is connected epitaxial loayer the fluorescent material mixed layer being set at epitaxial loayer, and be provided with the electrode metal ball to guarantee drawing of electrode current, utilize epitaxial loayer to inspire royal purple light or ultraviolet light, this royal purple light or ultraviolet excitation fluorescent material mixed layer, so that described planar structure White-light LED chip sends white light in chip-scale, greatly improved the production efficiency of white light.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (16)
1. planar structure White-light LED chip comprises:
Substrate, described substrate are non-conductive substrate, and described substrate has first surface and second surface;
Epitaxial loayer, described epitaxial loayer are arranged on the first surface of described substrate;
The fluorescent material mixed layer, described fluorescent material mixed layer is arranged on the described epitaxial loayer;
The first electrode and the second electrode, described the first electrode are arranged on the described epitaxial loayer and with described epitaxial loayer with described the second electrode and link to each other;
At least two electrode metal balls, described electrode metal ball are connected on described the first electrode and the second electrode in the described fluorescent material mixed layer.
2. planar structure White-light LED chip as claimed in claim 1 is characterized in that, the material of described fluorescent material mixed layer comprises fluorescent material and bonding glue.
3. planar structure White-light LED chip as claimed in claim 1 is characterized in that, the thickness of described fluorescent material mixed layer is 5um～100um.
4. such as claim 1 planar structure White-light LED chip, it is characterized in that, the size dimension of described fluorescent material mixed layer equals the size dimension of described epitaxial loayer, or greater than the size dimension of described epitaxial loayer and wrap up the sidewall of described epitaxial loayer.
5. such as claim 1 planar structure White-light LED chip, it is characterized in that, the size dimension of described fluorescent material mixed layer is the size dimension of 24mil*24mil, 20mil*40mil, 35mil*35mil, 38mil*38mil, 40mil*40mil, 45mil*45mil or 60mil*60mil.
6. planar structure White-light LED chip as claimed in claim 1 is characterized in that, the height of described electrode metal ball is 5um～300um.
7. planar structure White-light LED chip as claimed in claim 1, it is characterized in that, the material of described electrode metal ball is metal or alloy, described metal is gold, aluminium, copper, silver, antimony or tin, and described alloy is alusil alloy, aluminium copper, gun-metal, SAC alloy or Al-Si-Cu alloy.
8. planar structure White-light LED chip as claimed in claim 1 is characterized in that, the upper surface of the upper surface of described electrode metal ball and described fluorescent material mixed layer is in the same plane.
9. planar structure White-light LED chip as claimed in claim 1 is characterized in that, described epitaxial loayer comprises the first limiting layer that is cascading from top to bottom, luminous epitaxial loayer and the second limiting layer.
10. planar structure White-light LED chip as claimed in claim 9, it is characterized in that, the size dimension of described the second limiting layer is greater than the size dimension of described the first limiting layer and luminescent layer, described the first electrode is positioned on described the first limiting layer, and described the second electrode is positioned on the second other limiting layer of described the first limiting layer.
11. planar structure White-light LED chip as claimed in claim 9 is characterized in that, described luminous epitaxial loayer is the multiple quantum well active layer that excites ultraviolet light or royal purple light.
12. planar structure White-light LED chip as claimed in claim 1 is characterized in that, the material of described epitaxial loayer comprises gallium nitride-based material, gallium phosphide sill, gallium nitrogen phosphorus sill or Zinc oxide-base material.
13. such as the described planar structure White-light LED chip of any one in the claim 1 to 12, it is characterized in that, described planar structure White-light LED chip also comprises passivation layer, described passivation layer is arranged between described epitaxial loayer and the described fluorescent material mixed layer.
14. planar structure White-light LED chip as claimed in claim 13 is characterized in that the material of described passivation layer comprises silicon nitride, silicon dioxide, aluminium nitride or aluminium oxide.
15. such as the described planar structure White-light LED chip of any one in the claim 1 to 12, it is characterized in that, described planar structure White-light LED chip also comprises resilient coating, described resilient coating is arranged between described substrate and the described epitaxial loayer.
16. such as the described planar structure White-light LED chip of any one in the claim 1 to 12, it is characterized in that, described planar structure White-light LED chip also comprises the reflector, described reflector is arranged on the second surface of described substrate.
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| CN 201220226500 CN202712260U (en) | 2012-05-18 | 2012-05-18 | Plane structure white light led chip |
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| CN 201220226500 CN202712260U (en) | 2012-05-18 | 2012-05-18 | Plane structure white light led chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104766913A (en) * | 2015-03-30 | 2015-07-08 | 映瑞光电科技(上海)有限公司 | LED structure and manufacturing method thereof |
| CN105122441A (en) * | 2013-04-17 | 2015-12-02 | 松下知识产权经营株式会社 | Compound semiconductor device, method for manufacturing same, and resin-sealed semiconductor device |
| CN107527981A (en) * | 2017-08-31 | 2017-12-29 | 四川金英科技有限责任公司 | A kind of high brightness high color rendering index (CRI) low thermal resistance LED production technology |
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2012
- 2012-05-18 CN CN 201220226500 patent/CN202712260U/en not_active Expired - Lifetime
Cited By (9)
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| CN105122441A (en) * | 2013-04-17 | 2015-12-02 | 松下知识产权经营株式会社 | Compound semiconductor device, method for manufacturing same, and resin-sealed semiconductor device |
| US9865679B2 (en) | 2013-04-17 | 2018-01-09 | Panasonic Intellectual Property Management Co., Ltd. | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
| CN105122441B (en) * | 2013-04-17 | 2018-09-11 | 松下知识产权经营株式会社 | Compound semi-conductor device and resin molded semiconductor device |
| CN108788473A (en) * | 2013-04-17 | 2018-11-13 | 松下知识产权经营株式会社 | Compound semi-conductor device and its manufacturing method and resin molded semiconductor device |
| US10224397B2 (en) | 2013-04-17 | 2019-03-05 | Panasonic Intellectual Property Management Co., Ltd. | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
| US10553676B2 (en) | 2013-04-17 | 2020-02-04 | Panasonic Intellectual Property Management Co., Ltd. | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
| CN108788473B (en) * | 2013-04-17 | 2020-08-07 | 松下知识产权经营株式会社 | Compound semiconductor device, method for manufacturing the same, and resin-sealed semiconductor device |
| CN104766913A (en) * | 2015-03-30 | 2015-07-08 | 映瑞光电科技(上海)有限公司 | LED structure and manufacturing method thereof |
| CN107527981A (en) * | 2017-08-31 | 2017-12-29 | 四川金英科技有限责任公司 | A kind of high brightness high color rendering index (CRI) low thermal resistance LED production technology |
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