TW201301570A - Multi-color light emitting diode and manufacturing method thereof - Google Patents
Multi-color light emitting diode and manufacturing method thereof Download PDFInfo
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本發明是有關於一種發光二極體及其製作方法，特別是指一種多光色發光二極體及其製造方法。The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a multi-color light-emitting diode and a manufacturing method thereof.
發光二極體(以下簡稱LED)由於具有低耗電、元件壽命長、應答速度快的優點，再加上體積小，容易配合應用元件的設計，因此，已普遍使用於通訊、資訊、消費性電子產品、照明與顯示裝置，而成為應用日趨廣泛的電子元件。其中，白光LED無論在照明或顯示應用方面，由於其具有省電的優點，因此，在近年來的節能議題下，白光LED的發展也愈趨重要。Light-emitting diodes (hereinafter referred to as LEDs) have the advantages of low power consumption, long component life, and fast response speed, and are small in size and easy to match the design of application components. Therefore, they have been widely used in communication, information, and consumerism. Electronic products, lighting and display devices have become increasingly popular electronic components. Among them, white LEDs have the advantages of power saving in lighting or display applications. Therefore, under the energy-saving issues in recent years, the development of white LEDs has become more and more important.
目前白光LED的製作法大致有三種，第一種是以發出藍光或紫外光的晶粒加上螢光粉，利用藍光或紫外光激發螢光粉發光後混色以產生白光；第二種是將分別發出紅、綠或藍光的晶粒封裝在一起，使其混色而產生白光；而第三種則是在單一晶粒上形成可發出不同光色的發光層，利用該些發光層發出的不同光色混色後產生白光。At present, there are three kinds of white LED manufacturing methods. The first one is to emit blue or ultraviolet light crystal grains and fluorescing powder, and the blue light or ultraviolet light is used to excite the fluorescent powder to illuminate and then mix colors to produce white light; the second is to The crystal grains respectively emitting red, green or blue light are packaged together to be mixed to produce white light; and the third is to form a light-emitting layer which can emit different light colors on a single crystal grain, and the difference emitted by the light-emitting layers is utilized. White light is produced after color mixing.
前述第一種製法是利用單一晶片搭配不同顏色的螢光粉製成，目前多數廠商大多以可發出藍光的LED混合黃色螢光體的技術為主，不過此類型的白光LED現階段仍有亮度和色度不佳兩個問題亟需突破。第二種製法，目前則是將可發出不同光色之LED晶粒(例如雙晶粒、三晶粒，或四晶粒等)封裝而得，然而，以雙晶粒封裝方式(例如可由藍光LED+黃光LED、藍光LED+黃綠光LED，或是由藍綠光LED+黃光LED)製得的白光LED，由於是利用兩種顏色的LED形成白光，因此，顯色性較差，只能應用在顯色性能要求不高的場合；以封裝三晶粒或四晶粒而得的白光LED，雖然具有較佳的工作效率和演色性(Color rendering)，但是由於不同光色的LED晶粒會有驅動電壓、發光輸出、溫度特性，及壽命等差異性，因此不容易控制，而且由於是以多晶粒進行封裝，因此組裝空間和成本的增加也使其應用受到局限；而經由前述多晶粒混光方式產生的白光應用在顯示器時，當光經過濾光片後，大多數會變成不必要的光，也會使得光利用率降低。第三種製法，則是在單一晶粒上形成可發出不同光色的發光層，雖然可具有較高的演色性，且可減少一般以多晶粒封裝方式所造成的組裝空間較大的問題，然而，因為此種製法是在單一發光層上形成可發出不同光色的發光材料，因此會產生多重量子井(quantum well)，而容易導致LED晶粒的導通電壓(Vf)增加，且會降低LED晶粒的發光效率。The first method is to use a single wafer with different colors of phosphor powder. At present, most manufacturers mainly use blue light emitting LEDs to emit yellow phosphors, but this type of white LED still has brightness at this stage. Two problems with poor chroma are urgently needed. The second method is currently packaged with LED dies (eg, double, triple, or quad, etc.) that can emit different colors, however, in a dual-die package (eg, by blue light) LED+ yellow LED, blue LED+ yellow-green LED, or white LED made of blue-green LED+yellow LED, because it uses two colors of LED to form white light, therefore, the color rendering is poor, can only be applied in the display Where the color performance is not high; the white LEDs obtained by encapsulating three or four crystal grains have better working efficiency and color rendering, but LED crystals of different light colors may be driven. Differences in voltage, luminescence output, temperature characteristics, and lifetime are therefore not easy to control, and because they are packaged in multiple dies, the increase in assembly space and cost also limits their application; When the white light generated by the light mode is applied to the display, most of the light becomes unnecessary light when the light passes through the filter, which also reduces the light utilization efficiency. The third method is to form a light-emitting layer that can emit different light colors on a single crystal grain, although the color rendering property can be high, and the problem of large assembly space caused by the multi-die package method can be reduced. However, since such a method is to form a luminescent material that emits different light colors on a single luminescent layer, multiple quantum wells are generated, which tends to cause an increase in the turn-on voltage (V f ) of the LED dies, and Will reduce the luminous efficiency of the LED die.
因此，本發明之目的，即在提供一種可降低導通電壓並提升光利用率的多光色發光二極體。Accordingly, it is an object of the present invention to provide a multi-color light-emitting diode that can reduce the turn-on voltage and improve light utilization.
此外，本發明之另一目的，即在提供一種多光色發光二極體的製作方法。Further, another object of the present invention is to provide a method of fabricating a multi-color light-emitting diode.
於是，本發明的多光色發光二極體，包含一磊晶基板、一個發光單元，及一電極單元。Therefore, the multi-color light-emitting diode of the present invention comprises an epitaxial substrate, a light-emitting unit, and an electrode unit.
該磊晶基板具有一表面。The epitaxial substrate has a surface.
該發光單元具有一與該表面連接的第一半導體層，及至少二個設置於該第一半導體層表面並彼此間隔的磊晶層，該每一磊晶層分別與該第一半導體層共同界定出一發光源，且該些發光源於接收電能時會向外發出至少二種光色。The light emitting unit has a first semiconductor layer connected to the surface, and at least two epitaxial layers disposed on the surface of the first semiconductor layer and spaced apart from each other, the each epitaxial layer being respectively defined together with the first semiconductor layer A illuminating source is emitted, and the illuminating sources emit at least two kinds of light colors when receiving electric energy.
該電極單元具有一設置於該第一半導體層表面的底電極，及對應設置於該每一磊晶層頂面的頂電極，用以提供電能至該些發光源。The electrode unit has a bottom electrode disposed on a surface of the first semiconductor layer, and a top electrode corresponding to a top surface of each of the epitaxial layers for supplying electrical energy to the light sources.
此外，本發明多光色發光二極體的製作方法，包含一第一半導體層形成步驟、一發光單元形成步驟，及一電極單元形成步驟。In addition, the method for fabricating the multi-color light-emitting diode of the present invention comprises a first semiconductor layer forming step, a light-emitting unit forming step, and an electrode unit forming step.
該第一半導體層形成步驟是準備一具有一表面的磊晶基板，並於該表面形成一第一半導體層。The first semiconductor layer forming step is to prepare an epitaxial substrate having a surface, and a first semiconductor layer is formed on the surface.
該發光單元形成步驟是於該第一半導體層的部份表面向上形成一第一發光膜，及一形成於該第一發光膜表面，電性與該第一半導體層相反的第一半導體膜，接著自該第一半導體膜的部份表面向下蝕刻至使該第一半導體層露出，形成一第一磊晶層，接著將該第一磊晶層表面覆蓋一層保護層，並於該第一半導體層與該第一磊晶層間隔的表面向上形成一第二發光膜，及一形成於該第二發光膜表面，電性與該第一半導體層相反的第二半導體膜，接著自該第二半導體膜的部份表面向下蝕刻至使該第一半導體層露出，形成一第二磊晶層，該第一、二磊晶層分別與該第一半導體層共同界定出一第一、二發光源，且該第一、二發光源於接收電能時會向外發出不同光色。The illuminating unit is formed by forming a first luminescent film on a surface of a portion of the first semiconductor layer, and a first semiconductor film electrically formed on the surface of the first luminescent film opposite to the first semiconductor layer. And then etching a portion of the surface of the first semiconductor film to expose the first semiconductor layer to form a first epitaxial layer, and then covering the surface of the first epitaxial layer with a protective layer, and a surface of the semiconductor layer spaced apart from the first epitaxial layer is formed with a second luminescent film, and a second semiconductor film electrically formed on the surface of the second luminescent film opposite to the first semiconductor layer, and then Part of the surface of the second semiconductor film is etched downward to expose the first semiconductor layer to form a second epitaxial layer, and the first and second epitaxial layers respectively define a first and second together with the first semiconductor layer The light source is emitted, and the first and second light sources emit different light colors when receiving the electrical energy.
該電極單元形成步驟是將該保護層移除，於該第一半導體層表面沉積形成一底電極，並分別於該第一、二磊晶層頂面形成一頂電極，製得一用以提供電能至該些發光源的電極單元。The electrode unit is formed by removing the protective layer, depositing a bottom electrode on the surface of the first semiconductor layer, and forming a top electrode on the top surface of the first and second epitaxial layers, respectively, to provide a Electrical energy to the electrode units of the illumination sources.
本發明之功效在於：利用多次沉積方式於基材上形成具有多數個可發出不同光色的發光磊晶層的發光單元，而製得多光色發光二極體，而該製得的多光色發光二極體不僅可減小組裝空間，且可降低該多光色發光二極體的導通電壓並進一步提升其光利用率。The effect of the invention is that a plurality of light-emitting units having a plurality of light-emitting epitaxial layers capable of emitting different light colors are formed on the substrate by using a plurality of deposition methods, thereby producing a multi-color light-emitting diode, and the obtained one is more The light-emitting diode can not only reduce the assembly space, but also reduce the on-voltage of the multi-color LED and further improve its light utilization efficiency.
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之一個較佳實施例的詳細說明中，將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
本發明多光色發光二極體的製作方法是可用以製作具有多數個發光源的多光色發光二極體，於本較佳實施例中是以製作具有兩個發光源的多光色發光二極體為例作說明。The multi-color light-emitting diode of the present invention can be used to fabricate a multi-color light-emitting diode having a plurality of light-emitting sources. In the preferred embodiment, a multi-color light-emitting device having two light-emitting sources is used. The diode is taken as an example for illustration.
參閱圖1，本發明該多光色發光二極體的製作方法的較佳實施例是可製作如圖1所示的多光色發光二極體，該多光色發光二極體包含一磊晶基板2、一發光單元3，及一電極單元4。Referring to FIG. 1 , a preferred embodiment of the method for fabricating the multi-color light-emitting diode of the present invention can produce a multi-color light-emitting diode as shown in FIG. 1 , and the multi-color light-emitting diode includes a beam. The crystal substrate 2, a light emitting unit 3, and an electrode unit 4.
該磊晶基板2具有一表面21，可選自矽、氧化鋁，及碳化矽等材料構成。The epitaxial substrate 2 has a surface 21 which may be selected from materials such as tantalum, aluminum oxide, and tantalum carbide.
該發光單元3具有一與該表面21連接的第一半導體層31及二個設置於該第一半導體層31表面且彼此呈一間隙相隔的第一、二磊晶層32、33，且該第一、二磊晶層32、33別與該第一半導體層31共同界定出一第一、二發光源34、35。該第一磊晶層32具有依序自該第一半導體層31部分表面向上形成的第一發光膜321，與一形成於該第一發光膜321表面的第一半導體膜322，該第二磊晶層33具有依序自該第一半導體層31部分表面向上形成的第二發光膜331，與一形成於該第二發光膜331表面的第二半導體膜332。The light emitting unit 3 has a first semiconductor layer 31 connected to the surface 21 and two first and second epitaxial layers 32 and 33 disposed on the surface of the first semiconductor layer 31 and spaced apart from each other by a gap. The first and second epitaxial layers 32, 33 together with the first semiconductor layer 31 define a first and second illumination sources 34, 35. The first epitaxial layer 32 has a first luminescent film 321 formed in order from the surface of the first semiconductor layer 31, and a first semiconductor film 322 formed on the surface of the first luminescent film 321 . The crystal layer 33 has a second luminescent film 331 formed in this order from the surface of the first semiconductor layer 31, and a second semiconductor film 332 formed on the surface of the second luminescent film 331.
要說明的是，該第一半導體層31可選自n型摻雜或p型摻雜的半導體材料所構成，該n型摻雜或p型摻雜的選擇是與該第一、二半導體膜322、332是相對應的，也就是說，當該第一半導體層31是選自n型摻雜的半導體材料構成時，第一、二半導體膜322、332則是由p型半導體材料構成，反之亦然；該些第一、二發光膜321、331為分別選自不同的發光材料構成，例如該第一發光膜321可選自會發出藍光的發光材料，例如InxGa1-xN；而該第二發光膜331則可選自會發出綠光的發光材料，例如InyGa1-yN，其中調整In適當組成使x>y；此外，該第一、二半導體膜322、332的構成材料還可分別依據其對應之該第一、二發光膜321、331的材料搭配選擇，而分別由相同或不同的半導體材料構成。如此，該第一、二發光源34、35於接收電能時會向外發出兩種不同的光色，而該發光單元3則可利用該第一、二發光源34、35發出的不同光色混色後，向外發出預定之光色。It is to be noted that the first semiconductor layer 31 may be selected from an n-type doped or a p-type doped semiconductor material, and the n-type doping or p-type doping is selected from the first and second semiconductor films. 322, 332 are corresponding, that is, when the first semiconductor layer 31 is selected from an n-type doped semiconductor material, the first and second semiconductor films 322, 332 are made of a p-type semiconductor material. The first and second luminescent films 321 and 331 are respectively selected from different luminescent materials. For example, the first luminescent film 321 may be selected from luminescent materials that emit blue light, such as In x Ga 1-x N . The second luminescent film 331 may be selected from a luminescent material that emits green light, such as In y Ga 1-y N, wherein the appropriate composition of In is adjusted so that x>y; further, the first and second semiconductor films 322, The constituent materials of the 332 may also be respectively selected from the same or different semiconductor materials according to the material combinations of the corresponding first and second luminescent films 321, 331 respectively. In this way, the first and second illumination sources 34 and 35 emit two different color colors when receiving electric energy, and the illumination unit 3 can utilize different light colors emitted by the first and second illumination sources 34 and 35. After color mixing, the predetermined light color is emitted outward.
該電極單元4具有一形成在該第一半導體層31表面，並位在該第一、二磊晶層32、33相鄰之間隙的底電極41，及二個分別形成於該第一、二磊晶層32、33頂面的頂電極42，且該底、頂電極41、42可依需求設計成以並聯或分開串聯方式電連接，而可控制該至該第一、二發光源34、35接收電能時可單獨發光或同時發光；例如，可將該些頂電極42利用打線製程分別與外界電連接，而與該底電極41以分開串聯方式提供電能至該第一、二發光源34、35，或是將該些頂電極42經由打線製程彼此連接後，再自其中一頂電極42向外延伸與外界電連接，而與該底電極41以並聯方式提供電能至該第一、二發光源34、35，此外，要說明的是，當該些頂電極42是以並聯方式連接時，該第一、二發光源34、35與該第一半導體層31的表面可視需求進一步形成一絕緣保護層(圖未示)以防止短路，由於該些頂電極42與該底電極41以並聯或串聯與外界電連接的方式為本技術領域者週知，且非為本技術重點，因此不再多加詳述。The electrode unit 4 has a bottom electrode 41 formed on the surface of the first semiconductor layer 31 and adjacent to the gap between the first and second epitaxial layers 32, 33, and two electrodes respectively formed on the first and second sides. The top electrode 42 of the top surface of the epitaxial layer 32, 33, and the bottom and top electrodes 41, 42 can be designed to be electrically connected in parallel or in series, as needed, and the first and second illumination sources 34 can be controlled. When the power is received, the light can be separately illuminated or simultaneously illuminated; for example, the top electrodes 42 can be electrically connected to the outside by a wire bonding process, and the bottom electrode 41 can be separately connected in series to provide power to the first and second light sources 34. And 35, or connecting the top electrodes 42 to each other via a wire bonding process, and then extending outwardly from one of the top electrodes 42 to electrically connect with the outside, and supplying power to the first electrode and the bottom electrode 41 in parallel to the first and second electrodes The light source 34, 35, in addition, when the top electrodes 42 are connected in parallel, the first and second light sources 34, 35 and the surface of the first semiconductor layer 31 may further form a surface. Insulating protective layer (not shown) to prevent short circuit due to These known top electrode 42 and bottom electrode 41 as to the parallel or series electrical connection with the outside world by the present technical field, and the non-key-based technique, and therefore are not redundantly described in detail.
參閱圖2，本發明該多光色發光二極體的製作方法的較佳實施例包含一第一半導體層形成步驟51、一發光單元形成步驟52，及一電極單元形成步驟53。Referring to FIG. 2, a preferred embodiment of the method for fabricating the multi-color light-emitting diode of the present invention comprises a first semiconductor layer forming step 51, a light-emitting unit forming step 52, and an electrode unit forming step 53.
該第一半導體層形成步驟51是準備一具有一表面21的磊晶基板2，並於該表面21形成一第一半導體層31。The first semiconductor layer forming step 51 is to prepare an epitaxial substrate 2 having a surface 21, and a first semiconductor layer 31 is formed on the surface 21.
詳細的說，該步驟51是以化學氣相沉積方式於該表面21形成一由n型摻雜的半導體材料構成的該第一半導體層31。In detail, the step 51 forms a first semiconductor layer 31 composed of an n-type doped semiconductor material on the surface 21 by chemical vapor deposition.
該發光單元形成步驟52是於該第一半導體層31的表面形成彼此間隔設置的第一、二發光層32、33。The light emitting unit forming step 52 is to form first and second light emitting layers 32, 33 spaced apart from each other on the surface of the first semiconductor layer 31.
詳細的說，該步驟52是先於該第一半導體層31的部份表面沉積形成一第一發光膜321，及一形成於該第一發光膜321表面，電性與該第一半導體層31相反的第一半導體膜322，接著自該第一半導體膜322的部份表面向下蝕刻至使該第一半導體層31露出，形成一第一磊晶層32，且該第一磊晶層32與該第一半導體層31共同界定出一第一發光源34；接著，將該第一磊晶層32表面覆蓋一層由二氧化矽構成的保護層(圖未示)，再於該第一半導體層31與該第一磊晶層32間隔的表面依序形成一第二發光膜331，及一形成於該第二發光膜331表面，電性與該第一半導體層31相反的第二半導體膜332，接著再自該第二半導體膜332的部份表面向下蝕刻至使該第一半導體層31露出，形成一第二磊晶層33，且該第二磊晶層33與該第一半導體層31共同界定出一第二發光源35，即可得到該發光單元3。In detail, the step 52 is to deposit a first luminescent film 321 on a portion of the surface of the first semiconductor layer 31, and a surface of the first luminescent film 321 is electrically formed on the first semiconductor layer 31. The first semiconductor film 322 is etched downward from a portion of the surface of the first semiconductor film 322 to expose the first semiconductor layer 31 to form a first epitaxial layer 32, and the first epitaxial layer 32 is formed. Cooperating with the first semiconductor layer 31 to define a first light source 34; then, the surface of the first epitaxial layer 32 is covered with a protective layer (not shown) made of cerium oxide, and then the first semiconductor A surface of the layer 31 spaced apart from the first epitaxial layer 32 is sequentially formed with a second luminescent film 331 and a second semiconductor film electrically formed on the surface of the second luminescent film 331 opposite to the first semiconductor layer 31. 332, further etching from a portion of the surface of the second semiconductor film 332 to expose the first semiconductor layer 31 to form a second epitaxial layer 33, and the second epitaxial layer 33 and the first semiconductor The layer 31 collectively defines a second illumination source 35 to obtain the illumination unit 3.
要說明的是，該第一、二發光膜321、331為分別選自發出不同光色之發光材料構成，該第一、二半導體膜322、332則可選自相同或不同之半導體材料構成，由於該發光單元3的製程控制參數及相關材料選擇為本技術領域者所知悉，因此不再贅述。It is to be noted that the first and second luminescent films 321 and 331 are respectively selected from luminescent materials emitting different light colors, and the first and second semiconductor films 322 and 332 may be selected from the same or different semiconductor materials. Since the process control parameters and related material selection of the light-emitting unit 3 are known to those skilled in the art, they are not described again.
該電極單元形成步驟53是將該保護層移除，並於該第一半導體層31介於該第一、二發光層32、33之間的表面沉積形成一底電極41，並分別於該第一、二磊晶層32、33的頂面形成一頂電極42，得到一用以提供電能至該第一、二發光源34、35的電極單元4，即可製得如圖1所示之多光色發光二極體。The electrode unit forming step 53 is to remove the protective layer, and deposit a bottom electrode 41 on the surface of the first semiconductor layer 31 between the first and second light emitting layers 32, 33, and respectively A top electrode 42 is formed on the top surface of the first and second epitaxial layers 32, 33, and an electrode unit 4 for supplying electric energy to the first and second light sources 34, 35 is obtained, which can be obtained as shown in FIG. Multi-light color LED.
參閱圖3，值得一提的是，本發明該較佳實施例還可包含一封裝層形成步驟，該步驟是於該發光單元3表面覆蓋一層由環氧樹脂等可透光材料構成的封裝層36，可用以保護該發光單元3，而該封裝層36還可具有可被該第一、二發光源34、35所發出之光激發而發出不同光色的螢光粉361，藉由該封裝層36的設置不僅可保護該多光色發光二極體，此外，還可經由該螢光粉361進一步調整該多光色發光二極體向外發出之光色。例如當該第一、二發光源34、35為可發出藍光及黃綠光，經混光後雖然可以產出白光，但是發出的光帶有一些綠色，而且幾乎沒有紅色，因此，可在該封裝層36中加入可被該第一、二發光源34、35其中任一激發而發出紅光的螢光粉361，如此，即可經由混光後得到暖白光的LED，而較適用於一般起居的照明光源。Referring to FIG. 3, it is worth mentioning that the preferred embodiment of the present invention further includes an encapsulation layer forming step of covering the surface of the light emitting unit 3 with an encapsulation layer made of a light transmissive material such as epoxy resin. 36, can be used to protect the light-emitting unit 3, and the encapsulation layer 36 can also have a phosphor powder 361 that can be excited by the light emitted by the first and second illumination sources 34, 35 to emit different light colors, by using the package. The layer 36 is disposed not only to protect the multi-color light-emitting diode, but also to further adjust the light color emitted by the multi-color light-emitting diode via the phosphor powder 361. For example, when the first and second illumination sources 34, 35 emit blue light and yellow-green light, although light can be produced after being mixed, the emitted light has some green color and almost no red, so that the encapsulation layer can be Phosphor 361 which can be excited by any one of the first and second illuminating sources 34, 35 to emit red light is added to 36, so that a warm white LED can be obtained by mixing light, which is more suitable for general living. Lighting source.
參閱圖4，要再說明的是，該發光單元3也可進一步形成一具有第三發光膜371及第三半導體膜372的第三磊晶層37，令該第三磊晶層37與該第一半導體層31再界定出一第三發光源38，而得到同時具有三個發光源34、35、38之多光色發光二極體，由於該第三磊晶層37的製作方式與該第二磊晶層33大致相同，因此不再詳述。Referring to FIG. 4, it is to be noted that the light emitting unit 3 can further form a third epitaxial layer 37 having a third luminescent film 371 and a third semiconductor film 372, and the third epitaxial layer 37 and the first A semiconductor layer 31 further defines a third illumination source 38, and a multi-color LED having three illumination sources 34, 35, 38 is obtained, and the third epitaxial layer 37 is fabricated and The two epitaxial layers 33 are substantially identical and therefore will not be described in detail.
由於該第一、二、三發光源34、35、38為各別形成，所以該發光單元3的發光光色可藉由該第一、二、三發光膜321、331、371的材料選擇而加以調控，此外，還可藉由該第一、二、三磊晶層32、33、37的面積調整而控制該第一、二、三發光源34、35、38光色的強度比例，進而調控該發光單元3所發出之光色。Since the first, second, and third light sources 34, 35, and 38 are formed separately, the light color of the light emitting unit 3 can be selected by materials of the first, second, and third light emitting films 321, 331 and 371. In addition, the intensity ratio of the first, second, and third light-emitting sources 34, 35, and 38 can be controlled by the area adjustment of the first, second, and third epitaxial layers 32, 33, and 37. The light color emitted by the light emitting unit 3 is regulated.
綜上所述，本發明以多次沉積方式，於同一磊晶基板2上形成可獨立發出不同光色之第一、二、三發光源34、35、38，而可製得多光色發光二極體，且所得到的多光色發光二極體可有效減少習知以多晶粒封裝時的組裝空間較大的問題；此外，因為該多光色發光二極體的每一發光源34、35、38為獨立發光，不會相互影響，具有較低的導通電壓(Vf)，可解決習知為了要使發光層於接收電能時向外發出白光，而需在同一發光層上形成多重量子井，而使得發光二極體具有較高之導通電壓(Vf)的缺點；此外，還可再藉由該第一、二、三發光源34、35、38的面積調配控制亮度，及所發出之光色強度比例，而令該發光單元3發出之光色可更適用於不同照明用途之光色需求，故確實能達成本發明之目的。In summary, the present invention forms a first, second, and third illumination sources 34, 35, 38 on the same epitaxial substrate 2 that can independently emit different light colors in a plurality of deposition manners. The diode and the obtained multi-color light-emitting diode can effectively reduce the problem of large assembly space in the conventional multi-die package; in addition, because each of the multi-color light-emitting diodes 34, 35, 38 are independent light-emitting, do not affect each other, have a low on-voltage (V f ), can be solved in order to make the light-emitting layer emit white light when receiving electric energy, but need to be on the same light-emitting layer Forming multiple quantum wells, so that the light-emitting diode has a high on-voltage (V f ); in addition, the brightness can be controlled by the area of the first, second, and third illumination sources 34, 35, 38 And the ratio of the intensity of the emitted light, so that the light color emitted by the light-emitting unit 3 can be more suitable for the light color requirements of different lighting purposes, so the object of the present invention can be achieved.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
2．．．磊晶基板2. . . Epitaxial substrate
21．．．表面twenty one. . . surface
3．．．發光單元3. . . Light unit
31．．．第一半導體層31. . . First semiconductor layer
32．．．第一磊晶層32. . . First epitaxial layer
321．．．第一發光膜321. . . First luminescent film
322．．．第一半導體膜322. . . First semiconductor film
33．．．第二磊晶層33. . . Second epitaxial layer
331．．．第二發光膜331. . . Second luminescent film
332．．．第二半導體膜332. . . Second semiconductor film
34．．．第一發光源34. . . First illumination source
35．．．第二發光源35. . . Second illumination source
36．．．封裝層36. . . Encapsulation layer
361．．．螢光粉361. . . Fluorescent powder
37．．．第三磊晶層37. . . Third epitaxial layer
371．．．第三發光膜371. . . Third luminescent film
372．．．第三半導體膜372. . . Third semiconductor film
38．．．第三發光源38. . . Third illumination source
4．．．電極單元4. . . Electrode unit
41．．．底電極41. . . Bottom electrode
42．．．頂電極42. . . Top electrode
51．．．步驟51. . . step
52．．．步驟52. . . step
53．．．步驟53. . . step
圖1是一示意圖，說明由本發明較佳實施例製得之多光色發光二極體；Figure 1 is a schematic view showing a multi-color light-emitting diode made by a preferred embodiment of the present invention;
圖2是一流程圖，說明本發明多光色發光二極體製作方法的較佳實施例；2 is a flow chart showing a preferred embodiment of the method for fabricating a multi-color light-emitting diode of the present invention;
圖3是一示意圖，說明具有封裝層之多光色發光二極體；及3 is a schematic view showing a multi-color light emitting diode having an encapsulation layer; and
圖4是一示意圖，說明具有三個發光源的多光色發光二極體。Figure 4 is a schematic diagram showing a multi-color light emitting diode having three illumination sources.
2．．．磊晶基板2. . . Epitaxial substrate
21．．．表面twenty one. . . surface
3．．．發光單元3. . . Light unit
31．．．第一半導體層31. . . First semiconductor layer
32．．．第一磊晶層32. . . First epitaxial layer
321．．．第一發光膜321. . . First luminescent film
322．．．第一半導體膜322. . . First semiconductor film
33．．．第二磊晶層33. . . Second epitaxial layer
331．．．第二發光膜331. . . Second luminescent film
332．．．第二半導體膜332. . . Second semiconductor film
34．．．第一發光源34. . . First illumination source
35．．．第二發光源35. . . Second illumination source
4．．．電極單元4. . . Electrode unit
41．．．底電極41. . . Bottom electrode
42．．．頂電極42. . . Top electrode
Claims (12)
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| TW100122660A TW201301570A (en) | 2011-06-28 | 2011-06-28 | Multi-color light emitting diode and manufacturing method thereof |
| US13/446,588 US20130001636A1 (en) | 2011-06-28 | 2012-04-13 | Light-emitting diode and method for forming the same |
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| US11929355B2 (en) | 2020-10-08 | 2024-03-12 | Macroblock, Inc. | Mixed light light-emitting diode device |
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| US11437551B2 (en) * | 2019-03-19 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device package and application thereof |
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| TWI589025B (en) * | 2013-01-10 | 2017-06-21 | 晶元光電股份有限公司 | Light-emitting device |
| CN108054264A (en) * | 2017-12-26 | 2018-05-18 | 黄星群 | A kind of abnormal shape low-voltage high brightness LED chip |
| US11929355B2 (en) | 2020-10-08 | 2024-03-12 | Macroblock, Inc. | Mixed light light-emitting diode device |
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